CN109522608A - A kind of reversed on-chip capacitance of high balance is to structure - Google Patents
A kind of reversed on-chip capacitance of high balance is to structure Download PDFInfo
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- CN109522608A CN109522608A CN201811233799.3A CN201811233799A CN109522608A CN 109522608 A CN109522608 A CN 109522608A CN 201811233799 A CN201811233799 A CN 201811233799A CN 109522608 A CN109522608 A CN 109522608A
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- G06F30/20—Design optimisation, verification or simulation
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
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- H01L23/64—Impedance arrangements
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- H—ELECTRICITY
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
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- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
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Abstract
本发明公开了一种高平衡性的反向片上电容对结构，包括一对反向放置的电容单元。由于在毫米波频段电路中，电容被大量应用于匹配网络，电容的不对称性会影响到匹配网络的特性，其中片上变压器作为差分电路中常见的器件对电容的不对称性较为敏感。而本发明解决了传统单MOM电容在毫米波及更高频段下由衬底等寄生效应导致的不对称性，大幅度提高了电容作为二端口无源器件的对称性，提高了包含片上变压器的无源网络的平衡性。本发明具有并联串联两种连接方式，具有更高的拓展性。本发明可以与片上变压器等元件联合优化，提高差分电路的平衡性，并实现阻抗匹配等功能，从而提高毫米波及更高频率的电路性能，包括功率放大器的输出功率和能量转化效率。
The present invention disclosed a highly balanced reverse capacitor to the structure, including a pair of reverse placed capacitance units. Because in the millimeter -wave frequency band circuit, the capacitance is widely used in the matching network, and the asymmetry of the capacitance will affect the characteristics of the matching network. Among them, the transformer on the chip is more sensitive to the asymmetry of the capacitance as the common device in the differential circuit. The present invention solves the asymmetry caused by parasitic effects caused by the parasitic effects of the traditional single MOM capacitance under the higher frequency band, which greatly improves the symmetry of the capacitance as the passive device of the two -port. The balance of the source network. The present invention has two connection methods in parallel, and has higher expansion. The present invention can be optimized with components such as transformers on the film to improve the balance of differential circuits, and to achieve impedance matching functions, thereby improving the millimeter waves that affect the higher -frequency circuit performance, including the output power and energy conversion efficiency of the power amplifier.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, more particularly to a kind of high balance reversed on-chip capacitance to knot
Structure.
Background technique
With the rapid development of silicon-based semiconductor technique, cutoff frequency and maximum power transfer frequency have been breached
500GHz can compare favourably with Group III-V semiconductor technique.Further, since the low cost of silicon-based technology, high flexibility ratio, digital-to-analogue
The characteristic of one makes silicon substrate millimeter-wave systems become the research hotspot of academia and industry, wide including 5G millimeter wave
Band ultrahigh speed communication system (WRC-19 1.13), W-waveband long-distance millimeter-wave car radar, THz imaging technology etc..So
And since the resistance substrate rate of silicon-based technology is lower, metal interlevel is away from smaller, and there is many ghost effects, these effects exist
Simulation and lower radio frequency band be not significant, but enters millimeter wave and Terahertz frequency range, the parasitic drain of substrate, and
Mutual coupling between metal layer and signal wire will severe exacerbation circuit performance.Wherein capacitor be millimetre-wave circuit design in must not
The element that can lack, it is usually employed for radio frequency and is grounded, in direct-current blocking-up and impedance matching.Therefore the on piece of millimeter wave frequency band
Capacitance characteristic is the topic for being worth thinking.
Common on-chip capacitance structure is divided into metal-insulator-metal type (MIM) capacitor, metal-oxide-metal (MOM)
The mos capacitance of capacitor and active area.MIM capacitor provides model by technique manufacturer, there is the limitation of minimum dimension, smaller in capacitance
When Q value it is lower, and have lower self-resonant frequency.MOM capacitor is since its expansibility is strong, and Q value is high, self-resonant frequency
Height is widely used in millimetre-wave circuit design.Mos capacitance is usually made variable capacitance pipe, has the adjustable spy of capacitance
Property, but usually Q value is very low.In addition, involving higher frequency section in millimeter, MIM capacitor and MOM capacitor have structural asymmetry.
Fig. 1 gives the lumped element model of MIM capacitor and MOM capacitor, wherein LsAnd RsIt is connection resistance and inductance, CparAnd RsubGeneration
The ghost effect of table substrate, Cmom_iAnd Cmim_iFor ideal capacitance value.
Since MOM is similar with mim capacitor structure, former structure is only analyzed here, passes through two port P1 from MOM capacitor
The available following result (when investigating impedance from a port, the ground connection of another port) of its impedance is investigated with P2:
Wherein Xs=Rs+jωLs, Xp=Rsub+1/jωCpar, Xc=1/j ω Cmom_i。
The impedance contrast so obtained from two-port are as follows:
As it can be seen that when frequency is lower, XpIt is very big, DeffVery little, capacitor can be regarded as symmetrical device.But with frequency
Raising, 1/j ω CparValue reduce, and because silicon-based semiconductor technique substrate resistivity it is lower, RsubValue also compared with
It is small, so that DeffBe positively correlated with frequency, cause single MOM and MIM capacitor investigated from two ports can obtain it is different
Capacitance.The asymmetry of the capacitor can also find from electromagnetic-field simulation, as shown in figure 4, MOM that capacitance is 35fF and
There is the asymmetry for being higher than 3.5fF for MIM capacitor.
Therefore, it is necessary to invent the novel capacitance structure of one kind to eliminate in traditional capacitance because of not right caused by ghost effect
Title property, furthermore the capacitor needs higher Q value and outstanding expansion and compatibility.
Summary of the invention
Goal of the invention: the object of the present invention is to provide a kind of reversed on-chip capacitances of high balance to structure, can eliminate
Traditional capacitance millimeter wave frequency band asymmetry, to improve the balance of circuit.
Technical solution: to reach this purpose, the invention adopts the following technical scheme:
The reversed on-chip capacitance of high balance of the present invention is to structure, including a pair of oppositely positioned capacitor cell.
Further, the capacitor cell is metal-oxide-metal structure.This makes it possible to ensure capacitor to have compared with
High Q value.
Further, capacitor cell is connected in series to.
Further, capacitor cell connects in parallel.
Further, the capacitor cell is laminated by metal layer and silicon dioxide layer.
The utility model has the advantages that the invention discloses a kind of reversed on-chip capacitances of high balance to structure, compared with prior art,
With following the utility model has the advantages that
1) reciprocal capacitance solves traditional single MOM capacitor in the case where millimeter involves higher frequency section by parasitisms such as substrates to structure
Symmetry of the capacitor as Two-port netwerk passive device is greatly improved in asymmetry caused by effect.
2) two kinds of connection types of series connection in parallel have higher expansion.
3) the high q-factor characteristic of MOM capacitor is maintained.
4) balance of difference channel can be improved, and realize impedance matching with the elements combined optimization such as on-chip transformer
Etc. functions.
5) structure of complete equipilibrium can be improved the circuit characteristic that millimeter involves higher frequency, including the defeated of power amplifier
Power and energy conversion efficiency out.
Detailed description of the invention
Fig. 1 is the 3D view and lumped element model of traditional MOM and MIM capacitor；
Fig. 2 is that the reciprocal capacitance of two kinds of connection types to the three-view diagram of structure and simplifies mould in parallel and serial in the present invention
Type；
Fig. 3 is lumped element model of the reciprocal capacitance of two kinds of connection types to structure in parallel and serial in the present invention；
Fig. 3 (a) is the lumped element model of reciprocal capacitance in parallel to structure；
Fig. 3 (b) is lumped element model of the concatenated reciprocal capacitance to structure；
Fig. 4 is the reciprocal capacitance pair of two kinds of connection types and tradition MOM and MIM capacitor in parallel and serial in the present invention
Characteristic Simulation is as a result, include capacitor symmetry and Q value；
Fig. 5 (a) is the 3D view for applying the present invention to a W-waveband power amplifier output synthesis network；
Fig. 5 (b) is by the reciprocal capacitance in Fig. 5 (a) to replacing with disequilibrium pair caused by traditional MOM and MIM capacitor
Than figure；
Fig. 6 (a) is the circuit diagram for applying the present invention to a W-waveband power amplifier；
Fig. 6 (b) is by reciprocal capacitances all in Fig. 6 (a) to the large-signal performance comparison diagram for replacing with traditional MOM capacitor.
Specific embodiment
Technical solution of the present invention is further introduced with attached drawing With reference to embodiment.
The reversed on-chip capacitance that present embodiment discloses a kind of high balance is oppositely positioned to structure, including a pair
Capacitor cell.Capacitor cell is metal-oxide-metal structure, is laminated by metal layer and silicon dioxide layer.Capacitor list
Member can be connected in series to, as shown in Fig. 2 and Fig. 3 (a).Capacitor cell can also connect in parallel
Come, as shown in Fig. 2 and Fig. 3 (b).The capacitance being connected in parallel is two times of capacitor cell, is connected in series as capacitor cell
Half.The reciprocal capacitance can eliminate traditional single MOM capacitor in the case where millimeter involves higher frequency section by substrate etc. to structure
Asymmetry caused by ghost effect is suitable for height to improve the symmetry of capacitor, while the structure has higher q values
Frequency circuit design.In parallel and serial two kinds of connection types make the structure have very strong expansibility, capacitor design precision compared with
It is high.
Fig. 4 is the reciprocal capacitance pair of two kinds of connection types and the characteristic Simulation of tradition MOM and MIM capacitor in parallel and serial
As a result, including capacitor symmetry and Q value.The capacitance structure can be applied in the design of the circuit of differential configuration, and wherein on piece becomes
Depressor is normally used for single-ended-differential conversion and impedance matching as the common element in difference channel, and the reciprocal capacitance is to knot
Structure can together with on-chip transformer combined optimization, in the case where guaranteeing circuit balancing realize required for function.
As shown in Fig. 5 (a), the reciprocal capacitance that is connected in parallel is to being applied to the output based on 1:2 on-chip transformer
It synthesizes in network, the function of output impedance matching and differential to single-ended conversion is realized by combined optimization.The output synthesizes network
Center frequency point is 94GHz, and it is 35fF that required capacitance, which is calculated,.By the capacitor of the 35fF to be connected in parallel reciprocal capacitance
Right, tri- kinds of structures of MOM and MIM are realized, and are investigated on the influence of the Amplitude balance and phase balance of differential signal.Such as Fig. 5 (b) as it can be seen that
There is classic amplitude-phase balance to structure using reciprocal capacitance is connected in parallel, it is flat in amplitude using MOM and MIM capacitor
Influence in weighing apparatus property is little, but has large effect to phase equilibrium, can make 5 ° of ideal differential signal skew or more.
As shown in Fig. 6 (a), the reciprocal capacitance being connected in parallel is widely used in the function of a W-waveband to (overstriking capacitor)
In rate amplifier, to realize impedance matching.In order to investigate the income for using reciprocal capacitance pair, it is substituted for traditional single MOM
Capacitor, and detect the output power and transfer efficiency of power amplifier.As shown in Fig. 6 (b), using reciprocal capacitance to having
The additional output power of 0.15dB and 0.3% extra conversion efficiency.
Claims (5)
1. a kind of reversed on-chip capacitance of high balance is to structure, it is characterised in that: including a pair of oppositely positioned capacitor cell.
2. the reversed on-chip capacitance of high balance according to claim 1 is to structure, it is characterised in that: the capacitor cell
For metal-oxide-metal structure.
3. the reversed on-chip capacitance of high balance according to claim 1 is to structure, it is characterised in that: capacitor cell is to go here and there
The mode of connection connects.
4. the reversed on-chip capacitance of high balance according to claim 1 is to structure, it is characterised in that: capacitor cell is with simultaneously
The mode of connection connects.
5. the reversed on-chip capacitance of high balance according to claim 1 is to structure, it is characterised in that: the capacitor cell
It is laminated by metal layer and silicon dioxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811233799.3A CN109522608A (en) | 2018-10-23 | 2018-10-23 | A kind of reversed on-chip capacitance of high balance is to structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811233799.3A CN109522608A (en) | 2018-10-23 | 2018-10-23 | A kind of reversed on-chip capacitance of high balance is to structure |
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| Publication Number | Publication Date |
|---|---|
| CN109522608A true CN109522608A (en) | 2019-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811233799.3A Pending CN109522608A (en) | 2018-10-23 | 2018-10-23 | A kind of reversed on-chip capacitance of high balance is to structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021047757A1 (en) * | 2019-09-10 | 2021-03-18 | Huawei Technologies Co., Ltd. | An amplification device for amplifying a signal in electro-optical transceivers |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1148913A (en) * | 1995-02-16 | 1997-04-30 | 菲利浦电子有限公司 | Improvement in or relating to communications receivers |
| CN101893796A (en) * | 2009-05-19 | 2010-11-24 | 三星电子株式会社 | LCD Monitor |
| CN202424635U (en) * | 2012-01-18 | 2012-09-05 | 成都信息工程学院 | Switching circuit using polar capacitors as non-polar capacitors |
-
2018
- 2018-10-23 CN CN201811233799.3A patent/CN109522608A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1148913A (en) * | 1995-02-16 | 1997-04-30 | 菲利浦电子有限公司 | Improvement in or relating to communications receivers |
| CN101893796A (en) * | 2009-05-19 | 2010-11-24 | 三星电子株式会社 | LCD Monitor |
| CN202424635U (en) * | 2012-01-18 | 2012-09-05 | 成都信息工程学院 | Switching circuit using polar capacitors as non-polar capacitors |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021047757A1 (en) * | 2019-09-10 | 2021-03-18 | Huawei Technologies Co., Ltd. | An amplification device for amplifying a signal in electro-optical transceivers |
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Application publication date: 20190326 |