CN109509763A - A kind of image sensor pixel cells structure and forming method improving quantum efficiency - Google Patents
A kind of image sensor pixel cells structure and forming method improving quantum efficiency Download PDFInfo
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- CN109509763A CN109509763A CN201811267857.4A CN201811267857A CN109509763A CN 109509763 A CN109509763 A CN 109509763A CN 201811267857 A CN201811267857 A CN 201811267857A CN 109509763 A CN109509763 A CN 109509763A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
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Abstract
本发明公开了一种提高量子效率的图像传感器像素单元结构，包括设于硅衬底正面的光电二极管和传输管栅极，设于层间介质层中的金属互连层和聚光反射层，聚光反射层设有聚光层和金属反射层，并对应位于光电二极管的下方，聚光层具有阵列状的多个聚光突起，每个聚光突起具有面向光电二极管设置的弧形凸面表面，用于对自硅衬底背面入射的光线进行聚光，金属反射层具有与每个聚光突起的弧形凸面表面对应的连续弧形状结构，用于将经聚光后的入射光线再次反射至光电二极管中，保证了近红外光在硅衬底里吸收比例的大幅上升，提高了背照式像素单元的近红外量子效率。本发明还公开了一种提高量子效率的图像传感器像素单元结构的形成方法。
The invention discloses a pixel unit structure of an image sensor with improved quantum efficiency, comprising a photodiode and a transmission tube grid arranged on the front side of a silicon substrate, a metal interconnection layer and a light-concentrating reflection layer arranged in an interlayer medium layer, The light-concentrating reflection layer is provided with a light-concentrating layer and a metal reflection layer, and is located below the photodiode correspondingly. The light-concentrating layer has a plurality of light-concentrating protrusions in an array, and each light-concentrating protrusion has an arc-shaped convex surface facing the photodiode. , used to condense the light incident from the back of the silicon substrate, the metal reflective layer has a continuous arc-shaped structure corresponding to the arc-shaped convex surface of each light-concentrating protrusion, and is used to reflect the condensed incident light again. In the photodiode, the absorption ratio of near-infrared light in the silicon substrate is greatly increased, and the near-infrared quantum efficiency of the back-illuminated pixel unit is improved. The invention also discloses a method for forming a pixel unit structure of an image sensor with improved quantum efficiency.
Description
Technical field
The present invention relates to image sensor technologies fields, more particularly, to a kind of back-illuminated type figure for improving quantum efficiency
As sensor pixel cell structure and forming method.
Background technique
Imaging sensor refers to the device for converting optical signals to electric signal, usually extensive commercial imaging sensor core
Piece includes charge-coupled device (CCD) and complementary metal oxide semiconductor (CMOS) image sensor chip two major classes.
Cmos image sensor is compared with traditional ccd sensor, has low-power consumption, inexpensive and compatible with CMOS technology
The features such as, therefore have been more and more widely used.Present cmos image sensor is applied not only to consumer electronics field, such as micro-
In type digital camera (DSC), mobile phone camera, video camera and digital single-lens reflex camera (DSLR), and in automotive electronics, monitoring, biology
The fields such as technology and medicine are also widely used.
The pixel unit of cmos image sensor is that imaging sensor realizes photosensitive core devices.Most common pixel list
Member is the active pixel structure comprising a photodiode and multiple transistors.Photodiode is photosensitive list in these devices
Member realizes collection and photoelectric conversion to light, and other MOS transistors are control units, main to realize to photodiode
Choose, reset, signal amplification and read control.
Cmos image sensor is different according to the path that incident light enters photodiode, can be divided into front-illuminated and back-illuminated
Two kinds of imaging sensors of formula, the imaging sensor front-illuminated for referring to incident light and entering photodiode from front side of silicon wafer, and back-illuminated
Formula refers to that incident light enters the imaging sensor of photodiode from silicon chip back side.
In order to improve the area of photodiode in cmos image sensor and reduce loss of the dielectric layer to incident light, I
Can use back-illuminated cmos image sensors technique, i.e., incident light enters photodiode from the back side of silicon wafer, to subtract
Loss of the small dielectric layer to incident light, improves the sensitivity of pixel unit.
Silicon materials reduce the absorption coefficient of incident light with the enhancing of wavelength.Conventional pixel cell usually using it is red, green,
The filter layer of primary colors.Wherein the wavelength of blue light is 450 nanometers, and the wavelength of green light is 550 nanometers, and the wavelength of feux rouges is 650
Nanometer.Therefore absorption position of the feux rouges in silicon wafer is most deep, and blue light is most shallow.Blue light is inhaled in the position near silicon chip surface
It receives, absorption coefficient highest；It is most deep that feux rouges enters silicon wafer, can about enter 2.3 microns of silicon wafer, absorption coefficient is most
It is low；Between the two between blue light and feux rouges, and the absorption of near infrared light needs the absorption greater than 2.3 microns to the absorption coefficient of green light
Thickness.
A kind of structure of conventional back-illuminated cmos image sensors pixel unit is as shown in Figure 1.Wherein, in silicon substrate 10
The photodiode 11 of middle formation is the sensor devices of pixel unit, and the visible light part in incident ray passes through photoelectric conversion shape
At charge be collected in the photodiode.Since 10 thickness of silicon substrate of back-illuminated type pixel unit is usually in 3 microns,
And the near-infrared part in incident light needs the Si-Substrate Thickness much larger than 3 microns that can just be absorbed.Therefore as shown in Figure 1, entering
Penetrating the near-infrared part in light (near-infrared incident ray) will be directly through silicon substrate 10, subsequently into inter-level dielectric 12.Due to
Inter-level dielectric 12 in semiconductor technology is usually using translucent materials such as silica, therefore near-infrared incident ray will directly be worn
Silicon substrate 10 and inter-level dielectric 12 are crossed, cannot achieve normal photoelectric conversion, therefore quantum efficiency is extremely low.
In the application of current safety monitoring, machine vision and intelligent transportation system, the light wave of night infrared light filling
Length concentrates on 850 nanometers to 940 nanometers, and conventional back-illuminated type pixel unit is insensitive to the light of this wave band.
Therefore, it is necessary to design new back-illuminated type pixel cell structure and forming method, to improve the sensitive of near infrared band
Degree and quantum efficiency, promote the night vision effect of product.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of image for improving quantum efficiency is provided
Sensor pixel cell structure and forming method.
To achieve the above object, technical scheme is as follows:
The present invention provides a kind of image sensor pixel cells structures for improving quantum efficiency, comprising:
Silicon substrate；
Set on the positive photodiode of the silicon substrate and transmission tube grid；
Interlayer dielectric layer set on silicon substrate front lower section；
Metal interconnecting layer and light gathering reflector layer in the interlayer dielectric layer, the light gathering reflector layer is corresponding to be located at light
The lower section of electric diode；
Wherein, the light gathering reflector layer is equipped with light collecting layer and the metallic reflector below light collecting layer；The light collecting layer
Multiple optically focused protrusions equipped with array-like, each optically focused protrusion is with the flat bottom being arranged towards photodiode and backwards to light
The arc convex surface of electric diode setting, for carrying out optically focused, the metallic reflection to from the light of silicon substrate back surface incident
Layer has continuous arc shape and structure corresponding with the arc convex surface of each optically focused protrusion, for will be through the incident light after optically focused
Line reflexes in photodiode again.
Further, the material of the optically focused protrusion is polysilicon.
Further, each optically focused protrusion horizontal dense arrangement setting in the front face surface of the silicon substrate.
Further, the optically focused protrusion has the side wall being connected with its arc convex surface phase rounding off.
Further, the metallic reflector is fully wrapped around by its from below along the profile of multiple optically focused protrusions of array-like
Setting.
Further, the optically focused protrusion and transmission tube grid same layer setting.
Further, the metallic reflector is drawn and is grounded by metal interconnecting layer.
Further, further includes: the metal light blocking layer on the silicon substrate back side and between pixel unit, with
And the anti-reflecting layer between the silicon substrate backside surface and metal light blocking layer.
A kind of forming method for the image sensor pixel cells structure improving quantum efficiency, comprising:
One silicon substrate is provided, forms photodiode, transmission tube grid, suspending drain and shallow in the front of the silicon substrate
Slot isolation, and formed on the front of the corresponding silicon substrate being located above photodiode array-like multiple optically focused it is prominent
It rises, each optically focused protrusion is with the flat bottom being arranged towards photodiode and backwards to the arc convex of photodiode setting
Surface；
Metallic reflection layer material is deposited in the front face surface of the silicon substrate, optically focused protrusion is fully wrapped around, pass through optically focused
The arc convex surface topography of protrusion forms the continuous arc shape and structure of metallic reflector；
By lithography and etching, the metallic reflection layer material other than photodiode area is removed, retains two pole of photoelectricity
The metallic reflection layer material of package optically focused protrusion, forms metallic reflector above pipe；
Interlayer dielectric layer is deposited in the front face surface of the silicon substrate, and forms metal interconnecting layer in interlayer dielectric layer；
It will be adhered on slide glass after silicon substrate overturning, reduction process then executed to the back side of the silicon substrate；
The backside surface of the silicon substrate after being thinned deposits anti-reflecting layer, and metal gear is formed on anti-reflecting layer
Photosphere.
Further, while forming transmission tube grid, same layer forms the optically focused protrusion.
It can be seen from the above technical proposal that the present invention by below photodiode be arranged include polycrystalline light collecting layer and
The light gathering reflector layer of metallic reflector carries out optically focused to from the light of silicon substrate back surface incident using light collecting layer, utilizes simultaneously
Incident ray after optically focused is reflexed to again and realizes photoelectric conversion in photodiode by metallic reflector, be ensure that and is penetrated light
The gap that the near-infrared incident light of electric diode can not penetrate realizes focusing and reflection to near-infrared incident light, protects
It has demonstrate,proved near infrared light assimilation ratio in silicon substrate to be substantially increased, has improved the near-infrared quantum effect of back-illuminated type pixel unit
Rate.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of existing back-illuminated cmos image sensors pixel unit.
Fig. 2 is a kind of image sensor pixel cells structural representation of raising quantum efficiency of a preferred embodiment of the present invention
Figure.
Fig. 3-Fig. 8 is a kind of image sensor pixel cells structure of raising quantum efficiency of a preferred embodiment of the present invention
Forming method processing step schematic diagram.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
It should be noted that in following specific embodiments, when describing embodiments of the invention in detail, in order to clear
Ground indicates structure of the invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should be avoided in this, as limitation of the invention to understand.
In specific embodiment of the invention below, referring to Fig. 2, Fig. 2 is one kind of a preferred embodiment of the present invention
Improve the image sensor pixel cells structural schematic diagram of quantum efficiency.As shown in Fig. 2, a kind of raising quantum of the invention is imitated
The image sensor pixel cells structure of rate is one and establishes the back-illuminated cmos image sensors pixel list on silicon substrate 20
Meta structure.Wherein, in the front of silicon substrate 20, and it is located at the light that cmos image sensor pixel unit is provided in silicon substrate 20
The structures such as electric diode 21, suspending drain 23, shallow-trench isolation 22.Each MOS transistor is additionally provided on the front of silicon substrate 20.Example
24 structure of polycrystalline grid of transfer tube is such as additionally provided on the front of silicon substrate 20.
(20 front lower section of silicon substrate) is additionally provided with interlayer dielectric layer 27 in the front face surface of silicon substrate 20.Inter-level dielectric
Metal interconnecting layer is provided in layer 27.For using the pixel unit of double layer of metal interconnection layer 31,33, the metal of each layer is interconnected
It is interconnected between layer 31,33 by through-hole 32.
Wherein, photodiode 21 is photosensitive unit, realizes the collection to light and is responsible for photoelectric conversion, photon is converted
For electronics；Other MOS transistors are control units, it is main realize to the choosing of photodiode 21, reset, signal amplification and
The control of reading, it may include such as transfer tube, reset transistor, source electrode follow pipe and line EAC.Wherein transfer tube is responsible for photoelectricity
The electron-transport generated in diode 21 is converted to voltage signal output to suspending drain 23.Shallow-trench isolation 22 is for being isolated
Photodiode 21, i.e., for pixel to be isolated.
Please refer to Fig. 2.Light gathering reflector layer 30 is additionally provided in interlayer dielectric layer 27.Light gathering reflector layer 30 is corresponding to be located at light
The lower section of electric diode 21；Light gathering reflector layer 30 is equipped with light collecting layer and the metallic reflector 29 below light collecting layer.Wherein, gather
Photosphere has multiple 28 structures of optically focused protrusion of array-like；Each optically focused protrusion 28 has puts down towards what photodiode 21 was arranged
Face bottom surface and the arc convex surface that photodiode 21 is arranged backwards, for the light progress from 20 back surface incident of silicon substrate
Optically focused.Metallic reflector 29 has continuous arc shape and structure corresponding with the arc convex surface of each optically focused protrusion 28, is used for
Incident ray after optically focused is reflexed to again in photodiode 21 and realizes photoelectric conversion.It thereby realizes to near-infrared
The focusing and reflection (as shown dotted arrow signified) of incident light, ensure that near infrared light in silicon substrate 20 assimilation ratio it is big
Width rises, and improves the near-infrared quantum efficiency of back-illuminated type pixel unit.
The absorbability of incident light is directly related to the thickness of silicon substrate collecting zone, and near infrared light due to wavelength compared with
Long, the depth absorbed is much larger than conventional bluish-green red trichromatism.In order to enhance pixel unit to the absorbability of near infrared light, need
Photoelectric conversion will be realized after the near-infrared the reflection of generation incident light light echo electric diode of break-through silicon substrate.
It is the inter-level dielectric of light transmission below Conventional photodiode, cannot achieve the reflection to incident light.Therefore, of the invention
It is composed of by being arranged below photodiode the multiple optically focused protrusions 28 and continuous arc metal structure 29 of array-like
Light gathering reflector layer 30, formed and optically focused and reflection carried out to near-infrared incident ray, incident ray is by continuous arc metallic reflection
Afterwards, 21 photosensitive region of photodiode is reentered, photovoltaic reaction is concurrently given birth to, reacts the charge of generation by photodiode 21
Built-in potential is collected, and is formed electric signal to realize the collection of near-infrared incident ray and is improved pixel unit near-infrared
Quantum efficiency.Simultaneously as continuous curved metal 29 itself also has certain focusing light effect, so that optically focused provided by the invention
30 structure of reflecting layer can more efficiently collect the near-infrared incident ray across photodiode 21.
As optional embodiment, each optically focused protrusion 28 horizontal dense arrangement in the front face surface of silicon substrate 20 is set
It sets, and occupies whole surface of the light gathering reflector layer 30 towards photodiode 21, reflected to the greatest extent light.
The material of optically focused protrusion 28 can be polysilicon, can be identical as the material of polycrystalline grid 24 of transfer tube.
In addition, optically focused protrusion 28 can be arranged with transmission 24 same layer of tube grid, and can equally have in 28 outside of optically focused protrusion
The structures such as side wall.Wherein, 28 side wall of optically focused protrusion should be connected with the arc convex surface phase rounding off of optically focused protrusion 28, to protect
The general effect that card 30 pairs of light of light gathering reflector layer are focused and reflect.
In order to realize the abundant reflection to near-infrared incident ray, metallic reflector 29 can be prominent along multiple optically focused of array-like
Rise 28 profile it is from below that each optically focused protrusion 28 is fully wrapped around, guarantee that the near-infrared of reach throught photodiode 21 is incident
The gap that light can not penetrate, to guarantee the abundant reflection to incident light.
Meanwhile in order to avoid light gathering reflector layer 30 generates spurious charge because light irradiates, and influence photodiode 21
Normal work, can by metallic reflector 29 by metal interconnecting layer 31 (metal one) draw and be grounded.
In addition, the also settable metal light blocking layer 25 on the back side of silicon substrate 20 and between pixel unit；Each gold
Belong to light-blocking structure 25 and form opening in the top of corresponding photodiode 21, to guide light to enter and expose to from the opening
Photodiode 21.
As needed, the also settable anti-reflecting layer 26 between the backside surface of silicon substrate 20 and metal light blocking layer 25.
Below by specific embodiment and attached drawing, to a kind of image sensor pixel of raising quantum efficiency of the invention
The forming method of cellular construction is described in detail.
Fig. 3-Fig. 8 is please referred to, Fig. 3-Fig. 8 is a kind of image sensing of raising quantum efficiency of a preferred embodiment of the present invention
The processing step schematic diagram of the forming method of device pixel cell structure.As shown in Fig. 3-Fig. 8, a kind of raising quantum effect of the invention
The forming method of the image sensor pixel cells structure of rate can be used to form the imaging sensor of above-mentioned raising quantum efficiency
Pixel cell structure, and can comprise the following steps that
For using the pixel cell structure of double layer of metal interconnection layer 31,33, firstly, as shown in figure 3, providing silicon lining
Cmos image sensor process flow can be used in bottom 20, forms photodiode 21, transfer tube polycrystalline in the front of silicon substrate 20
The structures such as grid 24 and side wall, suspending drain 23 and shallow-trench isolation 22.Wherein, transfer tube polycrystalline grid 24 and side wall are being formed
Meanwhile on the front of silicon substrate the synchronous multiple optically focused protrusions 28 for forming the corresponding array-like being located above photodiode with
And the side wall of optically focused protrusion 28.Using conventional technique, that is, the combination of each optically focused protrusion 28 and its side wall may make to form tool
There are the pattern backwards to the arc convex surface of photodiode 21, the formation for 29 structure of subsequent metal reflecting layer.
Then, as shown in figure 4, full sheet deposits metallic reflection layer material 29 ' in the front face surface of silicon substrate, optically focused is dashed forward
Rise 28 and its side wall it is fully wrapped around.By the arc convex surface topography of 28 structure of optically focused protrusion, subsequent metal reflecting layer is formed
29 continuous arc shape and structure.It is lighttight that copper, tungsten, aluminium, tantalum nitride or titanium nitride etc. can be used in metallic reflection layer material 29 '
Metal or metallic compound.
It then, as shown in figure 5, can be by lithography and etching, by the metallic reflection layer material other than photodiode area
29 ' removals only retain the metallic reflection layer material 29 ' of package 28 part of optically focused protrusion above photodiode, prominent using optically focused
The arc convex surface topography for playing 28 structures, can form 29 structure of metallic reflector of continuous arc, so that it is anti-to form optically focused
Penetrate layer 30.
Then as shown in fig. 6, depositing interlayer dielectric layer 27 in the front face surface of silicon substrate 20.Then, it can be used conventional
CMOS metal interconnection process forms metal interconnecting layer 31,33 and 32 structure of through-hole in interlayer dielectric layer 27.
Then, as shown in fig. 7, being adhered on slide glass 34 after silicon substrate 20 is overturn, then the back side of silicon substrate 20 is held
Row reduction process.20 thickness of silicon substrate after being thinned is in 3 microns.
Finally, as shown in figure 8, the backside surface of the silicon substrate 20 after being thinned deposits to form anti-reflective using back-illuminated technique
Layer 26 is penetrated, and passes through the deposit of the metal materials such as aluminium, tungsten and copper, the technical process such as photoetching, etching, the shape on anti-reflecting layer 26
At metal light blocking layer 25.
In conclusion the present invention includes the poly- of polycrystalline light collecting layer and metallic reflector by being arranged below photodiode
Reflection layer carries out optically focused to from the light of silicon substrate back surface incident using light collecting layer, while will be through using metallic reflector
Incident ray after optically focused reflexes to again realizes photoelectric conversion in photodiode, ensure that the close red of reach throught photodiode
The gap that outer incident light can not penetrate realizes focusing and reflection to near-infrared incident light, ensure that near infrared light exists
Assimilation ratio is substantially increased in silicon substrate, improves the near-infrared quantum efficiency of back-illuminated type pixel unit.
The above is only a preferred embodiment of the present invention, the scope of patent protection that embodiment is not intended to limit the invention, because
This is all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in guarantor of the invention
It protects in range.
Claims (10)
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| CN111769131A (en) * | 2020-06-24 | 2020-10-13 | 中国电子科技集团公司第四十四研究所 | A back-illuminated CCD for enhancing near-infrared quantum efficiency and its manufacturing method |
| CN113491011A (en) * | 2020-07-31 | 2021-10-08 | 深圳市大疆创新科技有限公司 | Image sensor, method of manufacturing the same, and imaging device having image sensor mounted thereon |
| CN114725147A (en) * | 2022-05-16 | 2022-07-08 | 晶芯成(北京)科技有限公司 | An image sensor and its manufacturing method |
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| US20090294811A1 (en) * | 2008-05-29 | 2009-12-03 | Omnivision Technologies, Inc. | Image sensor with backside passivation and metal layer |
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| CN111769131A (en) * | 2020-06-24 | 2020-10-13 | 中国电子科技集团公司第四十四研究所 | A back-illuminated CCD for enhancing near-infrared quantum efficiency and its manufacturing method |
| CN113491011A (en) * | 2020-07-31 | 2021-10-08 | 深圳市大疆创新科技有限公司 | Image sensor, method of manufacturing the same, and imaging device having image sensor mounted thereon |
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| CN114725147A (en) * | 2022-05-16 | 2022-07-08 | 晶芯成(北京)科技有限公司 | An image sensor and its manufacturing method |
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