CN109494262A - A kind of crystal silicon solar batteries double-layer reflection reducing coating structure and its deposition method - Google Patents
A kind of crystal silicon solar batteries double-layer reflection reducing coating structure and its deposition method Download PDFInfo
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- CN109494262A CN109494262A CN201811620465.1A CN201811620465A CN109494262A CN 109494262 A CN109494262 A CN 109494262A CN 201811620465 A CN201811620465 A CN 201811620465A CN 109494262 A CN109494262 A CN 109494262A
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- 238000000151 deposition Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 75
- 229910052710 silicon Inorganic materials 0.000 title claims description 75
- 239000010703 silicon Substances 0.000 title claims description 75
- 239000011248 coating agent Substances 0.000 title claims description 61
- 238000000576 coating method Methods 0.000 title claims description 61
- 239000013078 crystal Substances 0.000 title claims description 57
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 75
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000010408 film Substances 0.000 claims description 38
- 238000006243 chemical reaction Methods 0.000 claims description 34
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 30
- 239000012495 reaction gas Substances 0.000 claims description 25
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 23
- 229910000077 silane Inorganic materials 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 16
- 229910021529 ammonia Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000005137 deposition process Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 7
- 239000001272 nitrous oxide Substances 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 8
- 238000002310 reflectometry Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 3
- 230000003667 anti-reflective effect Effects 0.000 description 9
- 239000006117 anti-reflective coating Substances 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Organic Chemistry (AREA)
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- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种晶硅太阳能电池用多层减反射膜结构及其沉积方法，包括：晶硅电池和氧化物层，所述晶硅电池和所述氧化物层之间设有一层、二层、三层或四层以上氮化硅层；可以制备低折射率的氧化物‑氮化硅多层减反射膜，调节多层膜的光学匹配，降低表面反射率至5％以内，因此，含低折射率氧化物多层减反射膜较常规氮化硅多层减反射膜具有更好的减反射效果，并且有利于晶硅电池对光线的利用率得到提升。
The invention discloses a multi-layer anti-reflection film structure for crystalline silicon solar cells and a deposition method thereof, comprising: a crystalline silicon cell and an oxide layer; layer, three or four or more silicon nitride layers; low refractive index oxide-silicon nitride multilayer anti-reflection films can be prepared, the optical matching of the multilayer films can be adjusted, and the surface reflectivity can be reduced to within 5%. Therefore, The low-refractive-index oxide-containing multi-layer anti-reflection film has better anti-reflection effect than the conventional silicon nitride multi-layer anti-reflection film, and is conducive to improving the utilization rate of light by the crystalline silicon cell.
Description
Technical field
The present invention relates to solar energy crystal silicon battery technical fields, and in particular to a kind of crystal silicon solar batteries multilayer anti-reflection
Penetrate membrane structure and its deposition method.
Background technique
Crystal silicon solar batteries development early stage relies primarily on classical semiconductor diffusion technique and improves itself efficiency, arrives
Last century Mo, surface wool manufacturing, silk-screen printing, back passivation and annealing technology have played key effect, have reduced production cost, promote
Photovoltaic industry.In the 21st century, relies on all kinds of high-efficiency battery technologies, and the efficiency of crystal silicon battery is substantially improved, in the whole world
Photovoltaic power generation occupation rate of market is about 90%.Wherein, outstanding antireflection layer is efficient crystal silicon solar batteries improved efficiency
Robust techniques, it can increase the light absorption of crystal silicon battery, and more luminous energy is made to be converted to electric energy.
Currently, crystal silicon solar batteries front antireflection layer primary structure is thin for the multilayer silicon nitride of refractive index about 2.08
Film, average reflectance are about 6% (300~1100nm spectral region).Wherein, the incident light of short-wave band is easier to through battery just
Surface reflection can make the utilization rate of cell against light get a promotion so being further reduced the optical reflection of front surface.It is many
Crystal silicon solar batteries producer attempts the film layer improvement of the filming equipment of different materials reflectance coating and more smart point, these improvement skills
Art more or less increases there is material cost and the high investment risk of equipment whole updating.
Prior art disadvantage: average reflectance is greater than 5%, and equipment cost needed for new process is high.It would therefore be highly desirable to a kind of crystal silicon
The appearance of double-layer reflection reducing coating structure used for solar batteries and its deposition method, can prepare the oxide-nitride of low-refraction
Silicon double-layer reflection reducing coating, adjusts the optical match of multilayer film, reduces surface reflectivity within 5%, therefore, oxygen containing low-refraction
Compound double-layer reflection reducing coating has better anti-reflective effect compared with conventional silicon nitride double-layer reflection reducing coating, and is conducive to crystal silicon electricity
Pond gets a promotion to the utilization rate of light.
Summary of the invention
In order to solve the above-mentioned technical problem, the invention proposes a kind of crystal silicon solar batteries double-layer reflection reducing coating structures
And its deposition method, the oxide-nitride silicon double-layer reflection reducing coating of low-refraction can be prepared, the optics of multilayer film is adjusted
Match, within reduction surface reflectivity to 5%, therefore, the oxide multilayered antireflective coating containing low-refraction is compared with conventional silicon nitride multilayer
Antireflective coating has better anti-reflective effect, and is conducive to crystal silicon battery and gets a promotion to the utilization rate of light.
In order to achieve the above object, technical scheme is as follows:
A kind of crystal silicon solar batteries double-layer reflection reducing coating structure, comprising: crystal silicon battery and oxide skin(coating), the crystal silicon
One layer, two layers, three layers or four layers or more silicon nitride layer is equipped between battery and the oxide skin(coating).
A kind of crystal silicon solar batteries double-layer reflection reducing coating structure and its deposition method provided by the invention, can prepare
The oxide-nitride silicon double-layer reflection reducing coating of low-refraction adjusts the optical match of multilayer film, reduces surface reflectivity to 5%
Within, therefore, there is better anti-reflection compared with conventional silicon nitride double-layer reflection reducing coating containing the oxide multilayered antireflective coating of low-refraction
Effect is penetrated, and is conducive to crystal silicon battery and gets a promotion to the utilization rate of light.
Based on the above technical solution, following improvement can also be done:
As a preferred option, when silicon nitride layer is two layers or more, this two layers perpendicular symmetrically arranged silicon nitride layer
For the first silicon nitride layer and the second silicon nitride layer.
As a preferred option, it is equipped with the first silicon nitride layer between the crystal silicon battery and the oxide skin(coating), described the
The second silicon nitride layer is equipped between one silicon nitride layer and the oxide skin(coating).
As a preferred option, the ranges of indices of refraction of first silicon nitride layer is 2.30-2.45, first silicon nitride
Layer is with a thickness of 15-20nm.
As a preferred option, the ranges of indices of refraction of second silicon nitride layer is 2.00-2.10, second silicon nitride
Layer is with a thickness of 40-45nm.
As a preferred option, the ranges of indices of refraction of the oxide skin(coating) is 1.40-1.60, and the oxide layer thicknesses are
15-20nm。
As a preferred option, the oxide skin(coating) is appointing in silicon oxide film, aluminum oxide film or thin film of titanium oxide
It is a kind of.
As a preferred option, a kind of crystal silicon solar batteries double-layer reflection reducing coating structure deposition method, including it is following
Step:
1) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries reactant gas silane and ammonia, leads to
It crosses radio frequency generation plasma reaction and deposits the first silicon nitride layer in crystal silicon battery；
2) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries reactant gas silane and ammonia, leads to
It crosses radio frequency generation plasma reaction and deposits the second silicon nitride layer on the first silicon nitride layer；
3) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries silane and nitrous oxide, passes through
Radio frequency generates plasma reaction deposited oxide layer on the second silicon nitride layer.
As a preferred option, the reaction temperature in step 1) is 500 DEG C -520 DEG C, reaction pressure 1550MTorr-
1650MTorr, silane reaction gas flow are 960sccm-980sccm, and ammonia reaction gas flow is 5750-5850sccm,
Reaction temperature in step 2) is 490 DEG C -510 DEG C, reaction pressure 1550MTorr-1650MTorr, silane reaction gas stream
Amount is 650sccm-670sccm, and ammonia reaction gas flow is 6990sccm-7010sccm, the reaction temperature in step 3)
It is 490 DEG C -510 DEG C, reaction pressure 1490MTorr-1510MTorr, silane reaction gas flow is 790sccm-
810sccm, nitrous oxide reaction gas flow are 8490sccm-8510sccm.
As a preferred option, the oxide skin(coating) in step 3) is silicon oxide film.
Detailed description of the invention
Fig. 1 is a kind of crystal silicon solar batteries double-layer reflection reducing coating structure chart provided in an embodiment of the present invention；
Fig. 2 is silicon oxide multi-layer battery and conventional silicon nitride multilayer film battery front side reflectance curve of the invention；
Wherein: 1. crystal silicon batteries, 2. first silicon nitride layers, 3. second silicon nitride layers, 4. third silicon nitride layers, 5. oxides
Layer.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
In order to reach the purpose of the present invention, as shown in Fig. 1 to 2, one of the present embodiment crystal silicon solar batteries are used more
Layer antireflective coating structure, comprising: crystal silicon battery 1 and oxide skin(coating) 5 are equipped between the crystal silicon battery 1 and the oxide skin(coating) 5
One layer, two layers, three layers or four layers or more silicon nitride layer.
A kind of crystal silicon solar batteries double-layer reflection reducing coating structure and its deposition method provided by the invention, can prepare
The oxide-nitride silicon double-layer reflection reducing coating of low-refraction adjusts the optical match of multilayer film, reduces surface reflectivity to 5%
Within, therefore, there is better anti-reflection compared with conventional silicon nitride double-layer reflection reducing coating containing the oxide multilayered antireflective coating of low-refraction
Effect is penetrated, and is conducive to crystal silicon battery and gets a promotion to the utilization rate of light.
In some embodiments, when silicon nitride layer is two layers or more, this two layers perpendicular symmetrically arranged silicon nitride layer
For the first silicon nitride layer 2 and the second silicon nitride layer 3.
Using above-described embodiment, structure is simple, easy to operate.
In some embodiments, the first silicon nitride layer 2 is equipped between the crystal silicon battery 1 and the oxide skin(coating) 5, it is described
The second silicon nitride layer 3 is equipped between first silicon nitride layer 2 and the oxide skin(coating) 5.
Using above-described embodiment, structure is simple, easy to operate.
In some embodiments, the ranges of indices of refraction 2.30-2.45 of first silicon nitride layer 2, first silicon nitride
Layer 2 is with a thickness of 15-20nm.
Using above-described embodiment, first silicon nitride layer 2 and 5 refringence of the silicon oxide layer are bigger greater than 0.3
Refringence can reduce critical angle when meeting total reflection condition, so that being more reflected back the light of multilayer film by silicon chip surface
Secondary counter is emitted back towards in silicon wafer, improves the anti-reflective effect of film layer, and deflecting increases the absorption of light in silicon.
In some embodiments, the ranges of indices of refraction 2.00-2.10 of second silicon nitride layer 3, second silicon nitride
Layer 3 is with a thickness of 40-45nm.
Using above-described embodiment, first silicon nitride layer 2 and 3 refringence of the second silicon nitride layer are greater than or equal to
0.3, bigger refringence can reduce critical angle when meeting total reflection condition, so that being more reflected back by silicon chip surface more
The light secondary counter of tunic is emitted back towards in silicon wafer, improves the anti-reflective effect of film layer, and deflecting increases the absorption of light in silicon.
In some embodiments, the ranges of indices of refraction 1.40-1.60 of the oxide skin(coating) 5, the oxide skin(coating) 5 with a thickness of
15-20nm。
Using above-described embodiment, second silicon nitride layer 3 and 5 refringence of the oxide skin(coating) are bigger greater than 0.3
Refringence can reduce critical angle when meeting total reflection condition, so that being more reflected back the light of multilayer film by silicon chip surface
Secondary counter is emitted back towards in silicon wafer, improves the anti-reflective effect of film layer, and deflecting increases the absorption of light in silicon.
Using PECVD device, nitrogen carries reactant gas silane and ammonia, generates plasma reaction deposition by radio frequency
First layer silicon nitride 2, ranges of indices of refraction 2.30~2.45,15~20nm of film thickness range；Plasma reaction is generated by radio frequency
Deposit second layer silicon nitride 3, ranges of indices of refraction 2.00~2.10,40~45nm of film thickness range；Finally, carrying silane using nitrogen
And laughing gas, deposition third layer low-refraction silicon oxide film, ranges of indices of refraction 1.40~1.6, film thickness range are generated by radio frequency
15~20nm.Finally, the mean refractive index of multi-layer film structure is 2.00 ± 0.06, and film thickness is 79 ± 8nm, crystal silicon solar electricity
Pond double-layer reflection reducing coating average reflectance is 3.50~4.50%.
In some embodiments, the oxide skin(coating) 5 is appointing in silicon oxide film, aluminum oxide film or thin film of titanium oxide
It is a kind of.
Using above-described embodiment, less than 1.8, lower refractive index reduces light and exists low-refraction sull refractive index
The light path passed through when transmitting in film layer, further decreases light and is absorbed by antireflection layer.
In some embodiments, a kind of crystal silicon solar batteries double-layer reflection reducing coating structure deposition method, including it is following
Step:
1) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries reactant gas silane and ammonia, leads to
It crosses radio frequency generation plasma reaction and deposits the first silicon nitride layer 2 in crystal silicon battery 1；
2) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries reactant gas silane and ammonia, leads to
It crosses radio frequency generation plasma reaction and deposits the second silicon nitride layer 3 on the first silicon nitride layer 2；
3) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries silane and nitrous oxide, passes through
Radio frequency generates plasma reaction deposited oxide layer 5 on the second silicon nitride layer 3.
Using above-described embodiment, crystal silicon solar batteries double-layer reflection reducing coating has compared with conventional silicon nitride double-layer reflection reducing coating
There is better anti-reflective effect, and is conducive to the development of efficient crystal silicon battery efficiency.
In some embodiments, the reaction temperature in step 1) is 500 DEG C -520 DEG C, reaction pressure 1550MTorr-
1650MTorr, silane reaction gas flow are 960sccm-980sccm, and ammonia reaction gas flow is 5750-5850sccm,
Reaction temperature in step 2) is 490 DEG C -510 DEG C, reaction pressure 1550MTorr-1650MTorr, silane reaction gas stream
Amount is 650sccm-670sccm, and ammonia reaction gas flow is 6990sccm-7010sccm, the reaction temperature in step 3)
It is 490 DEG C -510 DEG C, reaction pressure 1490MTorr-1510MTorr, silane reaction gas flow is 790sccm-
810sccm, nitrous oxide reaction gas flow are 8490sccm-8510sccm.
Using above-described embodiment, the reaction temperature in step 1) is 510 DEG C, reaction pressure 1600MTorr, silane reaction
Gas flow is 970sccm, and ammonia reaction gas flow is 5800sccm, and the reaction temperature in step 2) is 500 DEG C, reaction gas
Pressure is 1600MTorr, and silane reaction gas flow is 660sccm, and ammonia reaction gas flow is 7000sccm, in step 3)
Reaction temperature be 500 DEG C, reaction pressure 1500MTorr, silane reaction gas flow is 800sccm, nitrous oxide
Reaction gas flow is 8500sccm.
In some embodiments, the oxide skin(coating) in step 3) is silicon oxide film.
Using above-described embodiment, crystal silicon solar batteries double-layer reflection reducing coating has compared with conventional silicon nitride double-layer reflection reducing coating
There is better anti-reflective effect, and is conducive to the development of efficient crystal silicon battery efficiency.
First layer high refractive index silicon nitride layer 2,3 He of second layer low-refraction silicon nitride layer are deposited on 1 surface of crystal silicon battery
Third layer low-refraction oxide skin(coating) 5.When the multilayer film that light is gradually increased by refractive index, the influenced battery of different structure is inhaled
There are two the factor of receipts light is main: first is that the optical absorption of multilayer film, second is that the projection of multilayer film and internal reflection.Industrialization
Silicon nitride film layer ranges of indices of refraction 1.9~2.8, and low-refraction sull refractive index is less than 1.8, as silica is thin
Film, aluminum oxide film, thin film of titanium oxide etc., smaller refractive index reduces the light path passed through when light transmits in film layer, into one
Step reduces light and is absorbed by antireflection layer；The refringence range 0.1~0.2 of adjacent layer in common multilayer silicon nitride film layer structure,
And the refringence of crystal silicon solar batteries double-layer reflection reducing coating structure is greater than 0.3, bigger refringence can reduce satisfaction
Critical angle when total reflection condition, so that be more emitted back towards in silicon wafer by the light secondary counter that silicon chip surface is reflected back multilayer film,
The anti-reflective effect of film layer is improved, deflecting increases the absorption of light in silicon.
A kind of crystal silicon solar batteries double-layer reflection reducing coating structure and its deposition method provided by the invention generate as follows
The utility model has the advantages that
The present invention mainly utilizes low-refraction oxide-high refractive index silicon nitride-low-refraction silicon nitride-low-refraction oxygen
Compound double-layer reflection reducing coating reduces the positive optical reflection of crystal silicon battery.This oxide multilayered membrane structure reflectivity containing low-refraction
It is lower than common silicon nitride double-layer reflection reducing coating reflectivity less than 5%.Also, the oxide multilayered antireflective coating of low-refraction is short
The reflection of wave band is minimum, dramatically reduces solar battery in the optical energy loss of short-wave band.Under the same terms, low refraction
The oxide multilayered antireflective coating battery of rate has short circuit current more higher than silicon nitride double-layer reflection reducing coating battery, to solar-electricity
The efficiency in pond is promoted.This proves crystal silicon solar batteries double-layer reflection reducing coating of the present invention compared with conventional silicon nitride multilayer anti-reflection
Film is penetrated with better anti-reflective effect, and is conducive to the development of efficient crystal silicon battery efficiency.
The above are merely the preferred embodiment of the present invention, it is noted that for those of ordinary skill in the art,
Without departing from the concept of the premise of the invention, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.
Claims (10)
1. a kind of crystal silicon solar batteries double-layer reflection reducing coating structure characterized by comprising crystal silicon battery and oxide
Layer is equipped with one layer, two layers, three layers or four layers or more silicon nitride layer between the crystal silicon battery and the oxide skin(coating).
2. crystal silicon solar batteries according to claim 1 double-layer reflection reducing coating structure, which is characterized in that work as silicon nitride
When layer is two layers or more, this two layers perpendicular symmetrically arranged silicon nitride layer are the first silicon nitride layer and the second silicon nitride layer.
3. crystal silicon solar batteries according to claim 2 double-layer reflection reducing coating structure, which is characterized in that the crystal silicon
It is equipped with the first silicon nitride layer between battery and the oxide skin(coating), is equipped between first silicon nitride layer and the oxide skin(coating)
Second silicon nitride layer.
4. crystal silicon solar batteries according to claim 3 double-layer reflection reducing coating structure, which is characterized in that described first
The ranges of indices of refraction of silicon nitride layer is 2.30-2.45, and first silicon nitride layer is with a thickness of 15-20nm.
5. crystal silicon solar batteries according to claim 4 double-layer reflection reducing coating structure, which is characterized in that described second
The ranges of indices of refraction of silicon nitride layer is 2.00-2.10, and second silicon nitride layer is with a thickness of 40-45nm.
6. crystal silicon solar batteries according to claim 5 double-layer reflection reducing coating structure, which is characterized in that the oxidation
The ranges of indices of refraction of nitride layer is 1.40-1.60, and the oxide layer thicknesses are 15-20nm.
7. crystal silicon solar batteries according to claim 6 double-layer reflection reducing coating structure, which is characterized in that the oxidation
Nitride layer is any one of silicon oxide film, aluminum oxide film or thin film of titanium oxide.
8. a kind of crystal silicon solar batteries double-layer reflection reducing coating structure deposition method, which comprises the following steps:
1) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries reactant gas silane and ammonia, by penetrating
Frequency generates plasma reaction and deposits the first silicon nitride layer in crystal silicon battery；
2) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries reactant gas silane and ammonia, by penetrating
Frequency generates plasma reaction and deposits the second silicon nitride layer on the first silicon nitride layer；
3) the vapour deposition process equipment of plasma enhanced chemical is utilized, nitrogen carries silane and nitrous oxide, passes through radio frequency
Generate plasma reaction deposited oxide layer on the second silicon nitride layer.
9. crystal silicon solar batteries according to claim 8 double-layer reflection reducing coating structure deposition method, which is characterized in that
Reaction temperature in step 1) is 500 DEG C -520 DEG C, reaction pressure 1550MTorr-1650MTorr, silane reaction gas stream
Amount is 960sccm-980sccm, and ammonia reaction gas flow is 5750sccm-5850sccm, and the reaction temperature in step 2) is
490 DEG C -510 DEG C, reaction pressure 1550MTorr-1650MTorr, silane reaction gas flow is 650sccm-
670sccm, ammonia reaction gas flow are 6990sccm-7010sccm, and the reaction temperature in step 3) is 490 DEG C -510 DEG C,
Reaction pressure is 1490MTorr-1510MTorr, and silane reaction gas flow is 790sccm-810sccm, nitrous oxide
Reaction gas flow is 8490sccm-8510sccm.
10. crystal silicon solar batteries according to claim 9 double-layer reflection reducing coating structure deposition method, feature exist
In the oxide skin(coating) in step 3) is silicon oxide film.
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Application publication date: 20190319 |