CN109491196A - A kind of OPC modification method improving contact hole technique hot spot - Google Patents
A kind of OPC modification method improving contact hole technique hot spot Download PDFInfo
- Publication number
- CN109491196A CN109491196A CN201811630081.8A CN201811630081A CN109491196A CN 109491196 A CN109491196 A CN 109491196A CN 201811630081 A CN201811630081 A CN 201811630081A CN 109491196 A CN109491196 A CN 109491196A
- Authority
- CN
- China
- Prior art keywords
- contact hole
- assistant
- opc
- main graphic
- hot spot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000002715 modification method Methods 0.000 title claims abstract description 23
- 238000004088 simulation Methods 0.000 claims abstract description 30
- 238000001459 lithography Methods 0.000 claims abstract description 17
- 230000011218 segmentation Effects 0.000 claims abstract description 12
- 230000008602 contraction Effects 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000012216 screening Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention provides a kind of OPC modification method for improving contact hole technique hot spot, comprising: the contact hole graph of main graphic and assistant figure, the two are limited after conventional OPC amendment by mask plate minimum dimension rule；Main graphic is parallel with an opposite side of assistant figure and the two projection section is overlapped.To being parallel to each other in assistant figure with main graphic and making to shrink to its internal segmentation close to a line of main graphic, mask plate figure is obtained after making conventional OPC amendment to main graphic；And lithography simulation verifying is carried out to it.For the present invention on the basis of not increasing optical model complexity, by the screening to contact hole graphics art hot spot and progress OPC amendment again, the contact hole graph that limit script can by mask plate minimum dimension specification can be carried out conventional OPC amendment.So that its lithographic results finally on silicon wafer is met target value, reduces graphic defects, avoid contact with hole too high in resistance, ensure that the performance of device.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of amendment side OPC for improving contact hole technique hot spot
Method.
Background technique
In semiconductor product manufacturing process, with gradually becoming smaller for process node, pattern density can be higher and higher on domain.
This phenomenon seems particularly evident in the figure of the contact hole of back segment in the pre-connection.In order to preferably by the integrated electricity on mask
Road pattern is transferred on silicon wafer by photo-etching machine exposal, generally requires to correct (Optical using optical approach effect
Proximity Correction, OPC) method the layout patterns on mask plate are modified, then by revised version
Figure is converted on the mask plate that can be exposed.
Since mask will receive the limitation of minimum dimension regular (Mask Rule Constraint, MRC) in production,
So in the limitation for carrying out that mask plate minimum dimension specification can be arranged when OPC amendment to domain, that is, the limitation of critical size,
Prevent the layout patterns for occurring not making in the correction result of mask plate.However the contact for layout patterns very high density
For hole, limitation of the graphics intensive area vulnerable to MRC, therefore normal OPC amendment can not be carried out.This will lead to final cover
Template lithography result deviates preset target value, to generate technique hot spot, i.e. graphic defects, and then influences the good of product
Rate.
Industry is related to following several processing methods to the OPC amendment of contact hole process heat point at present: 1. are differentiated using sub-
The mode of rate figure auxiliary (SRAF) carries out OPC amendment, and this method is to change the length and width of mask plate figure using scattering condition
Than the case where being masked the limitation of plate minimum dimension specification appearance occurs in reduction, while guaranteeing lithographic results without departing from target value.2.
Using to OPC amendment is remake after the segmentation of contact hole layout patterns, it can equally avoid the occurrence of final OPC correction result and be masked plate
The case where minimum dimension specification limits occurs.However, both the above method is in the revised mask plate lithography simulation process of OPC
In, it is high to the degree of dependence for the optical model established.That is optical model is to the lithographic results on final silicon wafer
Predictive ability is weaker.For ordinary optical model, both the above method, which not can guarantee technique hot spot and can effectively obtain, to be disappeared
It removes.
Therefore, the problem of capable of eliminating technique hot spot when carrying out OPC amendment, is urgently to be resolved.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of improvement contact hole technique hot spots
OPC modification method, for solve in the prior art carry out optical proximity correction when, contact hole domain is limited by minimum gauge size
It makes and leads to the problem of technique hot spot.In order to achieve the above objects and other related objects, the present invention provides a kind of improvement contact hole
The OPC modification method of technique hot spot, this method include at least: Step 1: providing the contact hole target figure that a pair of of shape is rectangle
Shape is respectively defined as main graphic and assistant figure, and it is rectangle that the main graphic and assistant figure obtain shape after conventional OPC amendment
Mask pattern, both mask patterns of the main graphic and assistant figure positional relationship limited by mask plate minimum dimension rule
System, the overlapping of both opposite side that an opposite side of the two is parallel to each other and this is parallel to each other projection section.Step 2: to the secondary figure
The side of the overlapping of projection section described in the mask pattern of shape is made to shrink to its internal segmentation, and the segmentation of the side length on the side is shunk
Part is a part of the projection overlapping, and the final mask pattern of the assistant figure is obtained after contraction；Step 3: to described
Main graphic remakes conventional OPC amendment, obtains the final mask plate figure of the main graphic；Step 4: to the main graphic and pair
The final mask plate figure of figure carries out lithography simulation verifying.Preferably, both main graphic described in step 1 and assistant figure
The case where positional relationship is limited by mask plate minimum dimension rule includes: that the lithography simulation result of main graphic mask pattern deviates
Target value, and the lithography simulation result of assistant figure mask pattern is then without departing from its target value.
Preferably, other figures are not present therebetween in main graphic described in the step 1 and assistant figure.
Preferably, the value range of the minimum dimension rule in the step 1 are as follows: 14nm-60nm.
Preferably, the part that contraction is segmented described in the step 2 is 1.5-2 times of the minimum dimension.
Preferably, shape is all larger than in the step 1 for the length-width ratio of a pair contact hole targeted graphical of rectangle
1.5。
Preferably, the number for remaking conventional OPC in the step 3 to the main graphic is greater than once.
Preferably, it includes: to obtain after correcting to work routine OPC in step 3 that lithography simulation verifying is carried out in the step 4
The final mask pattern of main graphic make the routine site EPE and calculate, to the assistant figure obtained after contraction in the step 2
Mask pattern carries out lithography simulation verifying using the modified site original OPC.
As described above, the OPC modification method of improvement contact hole technique hot spot of the invention, has the advantages that this
The advantage of invention is on the basis of not increasing optical model complexity, by screening to contact hole graphics art hot spot and
Specific OPC amendment is carried out again, is able to carry out the contact hole graph that can be limited originally by mask plate minimum dimension specification often
The OPC of rule is corrected.So that its lithographic results finally on silicon wafer is met target value, reduces graphic defects, avoid contact with hole resistance
It is excessively high, it ensure that the performance of device.
Detailed description of the invention
Fig. 1 is shown as the OPC modification method flow chart of improvement contact hole technique hot spot of the invention；
Fig. 2 is shown with two contact hole domain relationships in traditional OPC modification method under the limitation of minimum dimension rule
Figure；
Fig. 3 is shown as the domain schematic diagram of OPC modification method of the invention；
Fig. 4 is shown with the domain schematic diagram obtained after OPC modification method of the invention.
Component label instructions
1 contact hole targeted graphical
2 mask plate figures
3 simulation figures
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
It please refers to Fig.1 to Fig.4.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
The present embodiment provides a kind of OPC modification methods for improving contact hole technique hot spot, and this method comprises the following steps: such as
Shown in Fig. 1, Fig. 1 is shown as the OPC modification method flow chart of improvement contact hole technique hot spot of the invention.
Step 1: providing the contact hole targeted graphical that a pair of of shape is rectangle, it is respectively defined as main graphic and assistant figure, institute
It states main graphic and assistant figure and obtains the mask plate patterns that shape is rectangle, the main graphic and secondary figure after conventional OPC amendment
Both mask patterns of shape positional relationship is limited by mask plate minimum dimension rule, a pair limited by minimum dimension rule
While being parallel to each other and the overlapping of a both opposite side that this is parallel to each other projection sections.
In Fig. 2, the main graphic and assistant figure are located in a domain, due to being obtained in OPC makeover process after amendment
To mask pattern need to meet the limitation of minimum dimension rule, that is to say, that the spacing between two revised figures is not
A certain value can be greater than, therefore, the exposure mask that described two adjacent main graphics and assistant figure obtain after conventional OPC amendment
Plate figure, which must satisfy minimum dimension rule, to be applied to the use being exposed on light shield as normal domain.It is described
Targeted graphical is the figure obtained after OPC is pre-processed, which will also carry out conventional OPC correcting process, finally be used
On light shield.The contact hole of product is used to fill metal and is formed and contacted with metal layer in the wafer, forms current path.Cause
This, the distance between described contact hole will meet the limitation of the minimum dimension rule in design rule.It is anti-after carrying out OPC amendment
Reflect the requirement that minimum dimension rule is equally wanted on domain.
Why contact hole targeted graphical 1 is divided is because the subsequent OPC made to main graphic is normal for main graphic and assistant figure
It advises amendment degree and corrects degree greater than the OPC to the assistant figure.Simultaneously as the limitation of minimum dimension rule, to the master
Figure and assistant figure carry out its respective mask pattern 2 obtained after routine OPC amendment, the mask pattern of the main graphic
2, which are in contact with it hole targeted graphical 1, compares, and variation degree is larger；And the mask pattern 2 of assistant figure is in contact with it hole targeted graphical
1 is little compared to variation.Simultaneously because the limitation of minimum dimension rule, so that the mask pattern 2 of the main graphic passes through emulation
Simulation figure 3 is obtained after verifying is in contact with it hole targeted graphical 1 compared to there are biggish deviations.As seen from Figure 2, under being located at
There are biggish gaps between the contact hole targeted graphical 1 and its simulation figure 3 of the main graphic of side, do not reach complete quasi-
It closes.In step 1, both mask patterns of the main graphic and assistant figure positional relationship is limited by mask plate minimum dimension rule
System, the overlapping of both opposite side that the opposite side limited by minimum dimension rule is parallel to each other and this is parallel to each other projection section.
As shown in Fig. 2, Fig. 2 is shown in traditional OPC modification method two contacts under the limitation of minimum dimension rule
Hole domain relational graph.In Fig. 2, the underlying contact hole targeted graphical 1 for main graphic, top is the contact hole of assistant figure
Targeted graphical 1.Due to being limited by minimum dimension rule, the part of the mask plate figure 2 arrow meaning of main graphic below cannot
The mask plate figure 2 close to assistant figure above is moved up again, wherein what respective mask pattern obtained after being emulated
Simulation figure 3 is round or oval.In the mask plate figure 2 of the mask plate figure 2 of following main graphic and assistant figure above
The opposite side limited by minimum dimension rule is parallel to each other and the two projection section is overlapped.The projection refers to the master map
The opposite side limited in the mask pattern 2 of shape and assistant figure mask pattern 2 by minimum dimension rule distinguish orthographic projection to pair
Side, projection overlapping.
Preferably, the positional relationship of both mask patterns of main graphic described in step 1 and assistant figure is by minimum dimension
The case where rule limitation, includes: that the simulation figure 3 of main graphic mask pattern 2 deviates from targeted graphical, and assistant figure mask plate
The simulation figure 3 of figure 2 is without departing from targeted graphical.It include the analogous diagram of the corresponding mask pattern 2 of main graphic in the situation
Shape 3 deviates the simulation figure 3 of its contact hole targeted graphical 1 mask pattern 2 corresponding with assistant figure without departing from its contact hole
The combination of targeted graphical 1, two conditions constitute the feelings for meeting and being limited by mask plate minimum dimension rule in the case where all meeting
Condition.
As shown in Fig. 2, the mask plate figure 2 of following main graphic is in contact with it hole targeted graphical 1 compared to changing greatly, and
It is little compared to variation that the mask plate figure 2 of assistant figure above is in contact with it hole targeted graphical 1.Further, in the step 1
Shape is that the length-width ratio of a pair contact hole targeted graphical of rectangle is all larger than 1.5.That is, main graphic connects in Fig. 2
Contact hole targeted graphical 1 is rectangle, and the long side of the rectangle and the ratio of short side are greater than 1.5；And the contact hole targeted graphical 1 of assistant figure
For rectangle, the long side of the rectangle and the ratio of short side are also greater than 1.5.
Further, other figures are not present therebetween in main graphic described in step 1 and assistant figure.That is, institute
It states main graphic and the assistant figure is two adjacent figures, third contact hole targeted graphical is not present therebetween.In this way
It is just able to satisfy the condition limited by minimum dimension rule, to individually be modified to the mask pattern of assistant figure.Again into one
It walks, the value range of the minimum dimension in the minimum dimension rule in step 1 are as follows: 14nm-60nm.In the present embodiment
It is preferred that value is 14nm.
Step 2: the side of the overlapping of projection section described in mask pattern to the assistant figure is made to its internal segmentation
It shrinks, the segmentation constriction of the side length on the side is a part of the projection overlapping, and the assistant figure is obtained after contraction most
Whole mask pattern.As shown in figure 3, Fig. 3 is shown as the domain schematic diagram of OPC modification method of the invention.In Fig. 3, the pair
The part that overlapping is projected in the mask pattern of figure, which is not all of, to be retracted, but a portion on the side be segmented it is laggard
It has gone contraction, and has been direction towards the mask pattern area for reducing the assistant figure that is, to the contraction of rectangle inside,
The part that the side is shown by overstriking in the mask pattern of assistant figure as shown in Figure 3, and shunk inwards with arrow mark.
In the present embodiment preferably, be segmented described in the step 2 contraction part be in minimum dimension rule most
1.5-2 times of small size.In the present embodiment, the value of the minimum dimension is 14nm, and the part that the segmentation is shunk is described
2 times of minimum dimension.Therefore, the value for the part that the segmentation is shunk is 28nm.Finally covering for the assistant figure is obtained after contraction
Diaphragm plate figure, as shown in figure 4, the mask pattern 2 of assistant figure is the figure after shrinking in Fig. 4, which will be used as light shield figure
Shape is to be exposed.Because the contact hole targeted graphical 1 of the assistant figure generated after being corrected as being located above in Fig. 4
The mask pattern 2 of assistant figure, modified degree is smaller, therefore, on simulation result substantially without influence, assistant figure after amendment
The simulation figure that mask pattern 2 is formed after being emulated with it is almost the same when not correcting.
It is corrected Step 3: making conventional OPC to the main graphic, obtains the final mask plate figure of the main graphic；Fig. 4
It is shown with the domain schematic diagram obtained after OPC modification method of the invention.In Fig. 4, to the mask plate figure of the assistant figure
After shape has carried out individual segmentation amendment, mask pattern of the assistant figure finally to expose has been obtained.The master that Fig. 3 is shown
Movement can just be continued up by the top of overstriking in pattern mask plate figure, so that the lithography simulation of the mask plate figure of main graphic
As a result reach target set point.
Since segmentation is shunk so that the distance between two sides being parallel to each other increase in the main graphic and assistant figure, solution
In addition to the limitation of minimum dimension rule, therefore, when making conventional OPC amendment to the main graphic, the mask plate of main graphic in Fig. 4
Figure 2, which can continue to extend, makees the final exposure mask obtained after routine OPC amendment to the main graphic in assistant figure, step 3
Plate figure changes the size of the mask pattern of original main graphic, so again the mask pattern 2 final to main graphic into
Row emulates, its simulation figure 3 can be fitted the contact hole targeted graphical 1 with the main graphic in Fig. 4.
Further, the simulation figure 3 of the main graphic emulated is round or oval, the round or ellipse and institute
Four sides for stating the contact hole targeted graphical 1 of main graphic are tangent and are fitted.And in Fig. 3, due to the limitation of minimum dimension rule, make
The main graphic mask pattern cannot be close to assistant figure and the contact hole targeted graphical of its simulation figure 3 and main graphic does not have
There is good fitting, obtained round recklessly oval simulation figure 3 and three sides of main graphic contact hole targeted graphical 1 are tangent,
Another side is not fitted and generates distortion.
Preferably, the number for making conventional OPC in the step 3 to the main graphic is greater than once.To institute in step 3
It may be primary for stating main graphic to make the number of routine OPC, in practice it has proved that OPC number for the simulated effect after once not such as larger than
Primary simulated effect.In the present embodiment preferably, the number of the OPC based on optical model conventional to main graphic work is
3-5 times.The mask pattern of the main graphic obtained after carrying out 3-5 times, increases the contact hole targeted graphical with the main graphic
Emulation degree of fitting.
Step 4: carrying out lithography simulation verifying to the mask plate figure.Lithography simulation verifying is carried out in the step 4
It include: to make the routine site EPE to the final mask pattern for the main graphic for making to obtain after routine OPC amendment in step 3 to calculate,
Lithography simulation is carried out using the modified site original OPC to the mask pattern of the assistant figure obtained after shrinking in the step 2
Verifying.In Fig. 4, the mask plate figure 2 of the assistant figure has been made after shrinking, and makees routine OPC to main graphic again using step 3 and repairs
After just, the mask plate figure 2 of main graphic is obtained, it can be seen that the mask plate figure 2 of the main graphic in Fig. 4 is obviously more main than in Fig. 2
The long side of the mask plate figure 2 of figure is longer, and closer to the mask plate figure 2 of the assistant figure.The simulation figure 3 of main graphic
No longer deviate contact hole targeted graphical 1 after OPC is corrected.Therefore, the technique hot spot of contact hole graph is effectively disappeared herein
It removes.
In conclusion the present invention is on the basis of increasing optical model complexity, by contact hole graphics art heat
The screening of point and specific OPC amendment is carried out again, make the contact hole graph that can be limited by mask plate minimum dimension specification of script
It is able to carry out conventional OPC amendment.So that its lithographic results finally on silicon wafer is met target value, reduces graphic defects, avoid
Contact hole resistance is excessively high, ensure that the performance of device.So the present invention effectively overcomes various shortcoming in the prior art and has
High industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (8)
1. a kind of OPC modification method for improving contact hole technique hot spot, which is characterized in that this method includes at least:
Step 1: providing the contact hole targeted graphical that a pair of of shape is rectangle, it is respectively defined as main graphic and assistant figure, the master
The mask pattern that figure and assistant figure obtain shape after conventional OPC is corrected as rectangle, the main graphic and assistant figure
Both mask patterns positional relationship is limited by mask plate minimum dimension rule, and the opposite side limited by minimum dimension rule is mutual
Parallel and both opposite side being parallel to each other projection section is overlapped.
Step 2: the side of the overlapping of projection section described in mask pattern to the assistant figure is made to receive to its internal segmentation
Contracting, the segmentation constriction of the side length on the side are a part of the projection overlapping, and the final of the assistant figure is obtained after contraction
Mask pattern；
It is corrected Step 3: remaking conventional OPC to the main graphic, obtains the final mask plate figure of the main graphic；
Step 4: the mask plate figure final to the main graphic and assistant figure carries out lithography simulation verifying.
2. the OPC modification method according to claim 1 for improving contact hole technique hot spot, it is characterised in that: in step 1
The case where positional relationship of both the main graphic and assistant figure is limited by mask plate minimum dimension rule includes: main graphic exposure mask
The lithography simulation result of plate figure deviates target value, and the lithography simulation result of assistant figure mask pattern is then without departing from its mesh
Scale value.
3. the OPC modification method according to claim 2 for improving contact hole technique hot spot, it is characterised in that: in step 1
Other figures are not present therebetween in the main graphic and assistant figure.
4. the OPC modification method according to claim 1 for improving contact hole technique hot spot, it is characterised in that: the step
The value range of minimum dimension rule in one are as follows: 14nm-60nm.
5. the OPC modification method according to claim 4 for improving contact hole technique hot spot, it is characterised in that: the step
The part that contraction is segmented described in two is 1.5-2 times of the minimum dimension.
6. the OPC modification method according to claim 1 for improving contact hole technique hot spot, it is characterised in that: the step
Shape is that the length-width ratio of a pair contact hole targeted graphical of rectangle is all larger than 1.5 in one.
7. the OPC modification method according to claim 1 for improving contact hole technique hot spot, it is characterised in that: the step
The number for remaking conventional OPC in three to the main graphic is greater than once.
8. the OPC modification method according to claim 1 for improving contact hole technique hot spot, it is characterised in that: the step
It includes: the final mask plate figure to the main graphic for making to obtain after routine OPC amendment in step 3 that lithography simulation verifying is carried out in four
Shape is made the routine site EPE and is calculated, and is repaired to the mask pattern of the assistant figure obtained after shrinking in the step 2 using original OPC
Positive site carries out lithography simulation verifying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811630081.8A CN109491196A (en) | 2018-12-29 | 2018-12-29 | A kind of OPC modification method improving contact hole technique hot spot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811630081.8A CN109491196A (en) | 2018-12-29 | 2018-12-29 | A kind of OPC modification method improving contact hole technique hot spot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109491196A true CN109491196A (en) | 2019-03-19 |
Family
ID=65713127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811630081.8A Pending CN109491196A (en) | 2018-12-29 | 2018-12-29 | A kind of OPC modification method improving contact hole technique hot spot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109491196A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110426915A (en) * | 2019-08-13 | 2019-11-08 | 德淮半导体有限公司 | Optical adjacent correction method |
| CN111929981A (en) * | 2020-08-28 | 2020-11-13 | 上海华力微电子有限公司 | Optical proximity correction method for hot spot of contact hole photoetching process |
| CN112415864A (en) * | 2020-11-24 | 2021-02-26 | 上海华力集成电路制造有限公司 | Method for determining OPC minimum segmentation length |
| CN112946993A (en) * | 2019-11-26 | 2021-06-11 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction, photomask manufacturing and graphical method |
| CN113219783A (en) * | 2020-01-21 | 2021-08-06 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method, related device and mask plate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101989309A (en) * | 2009-08-05 | 2011-03-23 | 联华电子股份有限公司 | How to correct the layout pattern |
| CN103186034A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN105353586A (en) * | 2014-08-18 | 2016-02-24 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing edge positioning error of optical proximity correction |
| CN105807555A (en) * | 2016-05-30 | 2016-07-27 | 上海华力微电子有限公司 | Method for improving OPC (optical proximity correction) precision |
| US10139723B2 (en) * | 2016-11-24 | 2018-11-27 | United Microelectronics Corp. | Method of forming photomask |
-
2018
- 2018-12-29 CN CN201811630081.8A patent/CN109491196A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101989309A (en) * | 2009-08-05 | 2011-03-23 | 联华电子股份有限公司 | How to correct the layout pattern |
| CN103186034A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN105353586A (en) * | 2014-08-18 | 2016-02-24 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing edge positioning error of optical proximity correction |
| CN105807555A (en) * | 2016-05-30 | 2016-07-27 | 上海华力微电子有限公司 | Method for improving OPC (optical proximity correction) precision |
| US10139723B2 (en) * | 2016-11-24 | 2018-11-27 | United Microelectronics Corp. | Method of forming photomask |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110426915A (en) * | 2019-08-13 | 2019-11-08 | 德淮半导体有限公司 | Optical adjacent correction method |
| CN112946993A (en) * | 2019-11-26 | 2021-06-11 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction, photomask manufacturing and graphical method |
| CN113219783A (en) * | 2020-01-21 | 2021-08-06 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method, related device and mask plate |
| CN113219783B (en) * | 2020-01-21 | 2024-05-17 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method, related device and mask plate |
| CN111929981A (en) * | 2020-08-28 | 2020-11-13 | 上海华力微电子有限公司 | Optical proximity correction method for hot spot of contact hole photoetching process |
| CN111929981B (en) * | 2020-08-28 | 2023-03-31 | 上海华力微电子有限公司 | Optical proximity correction method for contact hole photoetching process hot spot |
| CN112415864A (en) * | 2020-11-24 | 2021-02-26 | 上海华力集成电路制造有限公司 | Method for determining OPC minimum segmentation length |
| CN112415864B (en) * | 2020-11-24 | 2023-04-07 | 上海华力集成电路制造有限公司 | Method for determining OPC minimum segmentation length |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109491196A (en) | A kind of OPC modification method improving contact hole technique hot spot | |
| CN103513507B (en) | For the contiguous method revised | |
| CN107797375B (en) | Method for correcting target pattern | |
| TWI603143B (en) | Performing method of optical proximity correction | |
| US20210389663A1 (en) | Method and device for optical proximity effect correction | |
| US9760671B2 (en) | Rule checking | |
| US20090193385A1 (en) | Method of checking and correcting mask pattern | |
| CN108009316B (en) | OPC correction method | |
| CN116360205A (en) | Auxiliary graphics for optimizing the process window of the via layer | |
| CN107844033A (en) | A kind of method for correcting global metal layer process focus | |
| CN107450266A (en) | The modification method and system of optical approach effect | |
| CN103885282B (en) | A kind of wrong method of checking wrong report after reduction OPC amendments | |
| CN105353586B (en) | The method for reducing the edge position error of optical proximity correction | |
| CN105093810B (en) | The method for reducing the edge position error of the optical proximity correction of critical size | |
| CN107490932B (en) | Method for correcting mask graph | |
| CN106338883A (en) | Optical proximity correction method | |
| CN109254494B (en) | Optical proximity correction method | |
| TWI588595B (en) | Method of optical proximity correction | |
| US8122387B2 (en) | Optimizing integrated circuit chip designs for optical proximity correction | |
| TWI465839B (en) | Method of generating assistant feature | |
| KR101143622B1 (en) | Method for verifying optical proximity correction | |
| US20050049839A1 (en) | Methods of forming radiation-patterning tools; carrier waves and computer readable media | |
| CN111983887B (en) | Sub-resolution auxiliary graph acquisition method | |
| KR101168331B1 (en) | Method for verifying optical proximity correction | |
| CN109426066A (en) | The modification method and its update the system of mask graph |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190319 |