CN109478540A - semiconductor device - Google Patents
semiconductor device Download PDFInfo
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- CN109478540A CN109478540A CN201780042024.5A CN201780042024A CN109478540A CN 109478540 A CN109478540 A CN 109478540A CN 201780042024 A CN201780042024 A CN 201780042024A CN 109478540 A CN109478540 A CN 109478540A
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- temperature detecting
- semiconductor device
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/16—Special arrangements for conducting heat from the object to the sensitive element
- G01K1/18—Special arrangements for conducting heat from the object to the sensitive element for reducing thermal inertia
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
准确地检测半导体元件的温度的半导体装置具备第一基板和第二基板。第一基板和第二基板以隔着规定的间隔的方式彼此相向。多个半导体元件安装于第一基板的与第二基板相向的面。多个温度检测元件安装于第二基板的与第一基板相向的面，并且与多个半导体元件热接触。
A semiconductor device that accurately detects the temperature of a semiconductor element includes a first substrate and a second substrate. The first substrate and the second substrate face each other with a predetermined interval therebetween. The plurality of semiconductor elements are mounted on the surface of the first substrate facing the second substrate. The plurality of temperature detection elements are mounted on the surface of the second substrate facing the first substrate, and are in thermal contact with the plurality of semiconductor elements.
Description
Technical field
This disclosure relates to a kind of semiconductor device.
Background technique
In the past, it is known that a kind of semiconductor device for having semiconductor element.For example, Patent Document 1 discloses one kind
Have the half of the temperature detecting element of the semiconductor element being installed on substrate and configuration between substrate and semiconductor element
Conductor device, the temperature detecting element detect the temperature of semiconductor element.Specifically, partly leading in patent document 1
In body device, inverter circuit (semiconductor element) is constituted by the inverter circuit portion (main part) of substantially rectangular shape and multiple terminals,
Multiple terminals of inverter circuit are electrically connected by scolding tin with the wiring pattern of substrate.Moreover, temperature detecting element is to be located at inversion
Mode between circuit portion and substrate is installed on substrate (substrate for being equipped with inverter circuit).
Patent document 1: Japanese Unexamined Patent Publication 2006-135167 bulletin
Summary of the invention
The disclosure is designed to provide a kind of temperature that semiconductor element can be accurately detected in temperature detecting element
The semiconductor device of degree.
Semiconductor device in the disclosure has: first substrate；The second substrate, and first substrate is between as defined in separating
Every mode it is opposite；At least one semiconductor element, at least one semiconductor element mounting is in first substrate and the second base
The opposite face of plate；And at least one temperature detecting element, at least one temperature detecting element be installed on the second substrate with
The opposite face of first substrate, and thermally contacted at least one semiconductor element.
According to the disclosure, the temperature of semiconductor element can be accurately detected in temperature detecting element.
Detailed description of the invention
Fig. 1 is the perspective cross-sectional slice for indicating the structural example of the semiconductor device based on embodiment.
Fig. 2 is the circuit diagram for illustrating the concrete example of semiconductor device.
Fig. 3 is the schematic top view for illustrating the concrete example of semiconductor device.
Fig. 4 is the perspective cross-sectional slice for indicating the variation 1 of the semiconductor device based on embodiment.
Fig. 5 is the perspective cross-sectional slice for indicating the variation 2 of the semiconductor device based on embodiment.
Specific embodiment
Previous the problems in semiconductor device is first simplyd illustrate before illustrating embodiment of the present disclosure.In patent
In the semiconductor device of document 1, the heat of the main part of semiconductor element can be transmitted to via the terminal of semiconductor element to be equipped with
The substrate of temperature detecting element.That is, not only forming the main part from semiconductor element in the semiconductor device of patent document 1
The original heat-transfer path to temperature detecting element is played (specifically, being not via the heat transfer circuit of the terminal of semiconductor element
Diameter), also formed from the main part of semiconductor element via semiconductor element terminal to temperature detecting element another heat transfer
Path.Therefore, hot crosstalk has occurred (here, being defined as transmitting the heat of coming via another heat-transfer path in temperature detecting element
It is mixed into via original the phenomenon that hankering of heat-transfer path transmitting.), so being difficult to accurately examine in temperature detecting element
Survey the temperature of semiconductor element.
In the following, explaining embodiment in detail according to attached drawing.In addition, marking phase to same or equivalent part in the accompanying drawings
With label repeat its explanation not.
(semiconductor device)
Fig. 1 shows the structural example of the semiconductor device 10 based on embodiment.Semiconductor device 10 has shell 11, control
Substrate 15, first substrate 20 and the second substrate 30.Multiple semiconductor elements 40 are set in first substrate 20, in the second substrate 30
Multiple temperature detecting elements 50 are set, are provided with multiple lead between multiple semiconductor elements 40 and multiple temperature detecting elements 50
Hot body 60.In addition, in this embodiment, semiconductor device 10 constitutes switching power unit shown in Fig. 2.It explains in detail below
The concrete example (switching power unit) of semiconductor device 10.
< shell >
Control base board 15, first substrate 20 and the second substrate 30 are accommodated in shell 11.In this embodiment, shell 11 is by gold
Belong to material (such as aluminium) to constitute, and be formed as hollow rectangular-shape, is internally provided with pillar 12 in shell 11.Pillar 12 is vertical
The bottom for being set to shell 11 is acted, control base board 15 is supported.
< control base board >
Control base board 15 is formed as tabular.In addition, the face (upper surface in Fig. 1) in control base board 15 is equipped with
Control circuit 16.It is made of insulating materials (such as epoxy resin etc.) specifically, control base board 15 has and is formed as plate
The insulating substrate of shape and the wiring pattern in a face that insulating substrate is made of and be set to conductive material (such as copper etc.) (are led
Electric layer, illustration omitted), which is electrically connected with control circuit 16.
In this embodiment, control base board 15 is supported by pillar 12, and the side at defined interval is separated with the bottom of shell 11
Formula is opposite.In addition, another face (lower surface in Fig. 1) in control base board 15 is equipped with connector 17.Specifically, controlling
Another face of the insulating substrate of substrate 15 processed is also equipped with wiring pattern (conductive layer, illustration omitted), the wiring pattern and company
Connect the electrical connection of device 17.In addition, being set to the wiring pattern in another face of control base board 15 via being set to the logical of insulating substrate
Hole (illustration omitted) etc. and be electrically connected with the wiring pattern in a face for being set to control base board 15.That is, connector 17 is via control
The wiring pattern of another surface side of substrate 15 processed and the wiring pattern of a surface side and be electrically connected with control circuit 16.
< first substrate >
First substrate 20 is formed as tabular.In this embodiment, first substrate 20 is the function such as installation field effect transistor (FET)
The rigidity of the power substrate of rate element, first substrate 20 is higher than the rigidity of control base board 15.Specifically, first substrate 20 has
Insulating layer 21, conductive layer 22 and heat dissipating layer 23.
Insulating layer 21 is made of insulating materials (such as epoxy resin etc.), is formed as tabular.
Conductive layer 22 is made of conductive material (such as copper etc.), is set to a face (the upper table in Fig. 1 of insulating layer 21
Face), and the conductive layer 22 is formed as foil-like.Wiring pattern is formed in conductive layer 22.In the example in fig 1, wiring pattern
Including one or more power-supply wiring WP, one or more ground connection wirings WG (illustration omitted) and one or more output wirings
WO.In conductive layer 22, power-supply wiring WP, ground connection wiring WG and output wiring WO are cut off so that not short-circuit each other.In addition,
Explain power-supply wiring WP, ground connection wiring WG and output wiring WO in detail below.
Heat dissipating layer 23 is made of heat-transfer matcrial (such as aluminium etc.), is set to another face (following table in Fig. 1 of insulating layer 21
Face).Heat dissipating layer 23 can be connect with cooling component (illustration omitted), which is configured to (utilize cooling water by water cooling
The cooling of progress), oil cold (utilize cooling oil carry out cooling) cooled down.
In this embodiment, the thickness of insulating layer 21 is thinner than conductive layer 22 and the respective thickness of heat dissipating layer 23.The thickness of heat dissipating layer 23
It spends thicker than the thickness of conductive layer 22.For example, the thickness of insulating layer 21 can be set as 100 μm or so, by the thickness of conductive layer 22
Degree is set as 200 μm or so, and the thickness of heat dissipating layer 23 is set as 1~3mm or so.Moreover, the coefficient of overall heat transmission ratio of insulating layer 21 is led
Electric layer 22 is low with the respective coefficient of overall heat transmission of heat dissipating layer 23.The coefficient of overall heat transmission of conductive layer 22 is higher than the coefficient of overall heat transmission of heat dissipating layer 23.
In addition, in this embodiment, first substrate 20 is placed in the bottom of shell 11, heat dissipating layer 23 and the bottom of shell 11 are connect
Touching.Moreover, first substrate 20 and the control base board 15 supported by pillar 12 are opposite in a manner of separating defined interval.
< the second substrate >
The second substrate 30 is formed as tabular, is the independent substrate different from first substrate 20.Moreover, the second substrate 30
It is set as opposite in a manner of separating defined interval with first substrate 20.In this embodiment, the rigidity of the second substrate 30 is than first
The rigidity of substrate 20 is low.Specifically, the second substrate 30 is made of flexible flexible base board 31.
Flexible base board 31 is formed as tabular, is the substrate different from control base board 15.Moreover, flexible base board 31 is with
One substrate 20 separates the opposite mode in defined compartment of terrain and configures between first substrate 20 and control base board 15, the flexible base board
31 a part (being in this embodiment one end) connection and another face (lower surface in Fig. 1) for being fixed on control base board 15.This
Outside, the rigidity of flexible base board 31 is lower than the rigidity of control base board 15.Specifically, flexible base board 31 has by insulating materials (example
Such as polyimide resin) it constitutes and is formed as flat flexible parent metal (flexible insulating substrate) and by conductive material
(such as copper etc.) constitutes and is set to wiring pattern (conductive layer, province's sketch map in a face (lower surface in Fig. 1) for flexible parent metal
Show).Moreover, one end of flexible base board 31 is embedded in and is fixed on connector 17, the wiring pattern of flexible base board 31 is via connector
17 and be electrically connected with the wiring pattern in another face for being set to control base board 15.
< semiconductor element >
Multiple semiconductor elements 40 are installed on face (the upper table in Fig. 1 opposite with the second substrate 30 of first substrate 20
Face).Specifically, the wiring pattern of semiconductor element 40 and the face (upper surface in Fig. 1) for being set to first substrate 20
(conductive layer 22) electrical connection.
In this embodiment, semiconductor element 40 is made of the field effect transistor (FET) of surface installing type.In addition, semiconductor
Element 40 can also be made of other components (such as diode etc.) of the field effect transistor (FET) of non-surface installing type.
< temperature detecting element >
Multiple temperature detecting elements 50 are installed on the face (following table in Fig. 1 opposite with first substrate 20 of the second substrate 30
Face).Specifically, multiple temperature detecting elements 50 be set in the second substrate 30 (being in this example embodiment flexible base board 31)
Wiring pattern (illustration omitted) electrical connection of one face (lower surface in Fig. 1).In addition, the cloth of a surface side of flexible base board 31
Line pattern (is saved via connector 17 with the wiring pattern in another face (lower surface in Fig. 1) for being set to control base board 15
Sketch map shows) electrical connection.Moreover, the wiring pattern of another surface side (lower face side in Fig. 1) of control base board 15 and control base
The wiring pattern (illustration omitted) of a surface side (upper surface side in Fig. 1) for plate 15 is electrically connected, a face of control base board 15
The wiring pattern of side is electrically connected with control circuit 16.Thus, multiple temperature detecting elements 50 via flexible base board 31 wiring diagram
Case, connector 17, control base board 15 another surface side wiring pattern and control base board 15 a surface side wiring diagram
Case and be electrically connected with control circuit 16.
In addition, multiple temperature detecting elements 50 are thermally contacted with multiple semiconductor elements 40.In this embodiment, temperature detecting element
50 number is identical as the number of semiconductor element 40, and multiple temperature detecting elements 50 and multiple semiconductor elements 40 are one to one
Thermo-contact.Moreover, in plan view, temperature detecting element 50 is with part of it or all with semiconductor element 40 (with the temperature
Spend the corresponding semiconductor element 40 of detecting element 50) part or all of mode being overlapped and semiconductor element 40 it is opposite.
In addition, temperature detecting element 50 is configured to the temperature for the semiconductor element 40 that detection is thermally contacted with it.Specifically,
Temperature detecting element 50 is configured to output electric signal corresponding with the temperature of setting place.The electricity exported from temperature detecting element 50
Signal (electric signal corresponding with the temperature detected in temperature detecting element 50) via flexible base board 31 wiring pattern, even
Connect device 17, control base board 15 another surface side wiring pattern and control base board 15 a surface side wiring pattern and pass
It is sent to control circuit 16.In this embodiment, temperature detecting element 50 is made of thermistor.In addition, temperature detecting element 50 can also
To be made of the other components (such as thermocouple etc.) different from thermistor.
< heat carrier >
Heat carrier 60 is present between multiple semiconductor elements 40 and multiple temperature detecting elements 50.In this embodiment, thermally conductive
The number of body 60 is identical as the number of temperature detecting element 50.That is, in this embodiment, number, the temperature detection of semiconductor element 40
The number of element 50 and the number of heat carrier 60 are identical.Moreover, multiple heat carriers 60 are respectively present in multiple semiconductor elements
Between 40 and multiple temperature detecting elements 50.In addition, in this embodiment, heat carrier 60 is made of thermal grease conduction or thermally conductive bonding agent.This
Outside, heat carrier 60 can also be made of other components (such as heat conductive rubber etc.) different from thermal grease conduction or thermally conductive bonding agent.
The concrete example of < semiconductor device: switching power unit >
As described above, in this embodiment, semiconductor device 10 constitutes switching power unit shown in Fig. 2.Switching power unit
(semiconductor device 10) will (be in this embodiment output electricity for the DC power supply P) electrical power conversion supplied from power supply by on-off action
Power, and it (is in this embodiment motor M) that output power, which is supplied to driven object,.In the example in figure 2, switching power unit
(semiconductor device 10) constitutes the inverter that direct current power is converted to three-phase ac power.
As shown in Fig. 2, switching power unit (semiconductor device 10) has power supply line LP, ground line LG, one or more
Output line LO, one or more switch portion SW and capacitance part CP.In this embodiment, one end of power supply line LP and DC power supply P
(anode) connection, ground line LG are connect with the other end (cathode) of DC power supply P.In addition, in switching power unit (semiconductor dress
Set 10) setting there are three output line LO and three switch portions SW, three switch portion SW via three output line LO and with motor M
Three phases (U, V, W) be separately connected.
Switch portion SW is connected between power supply line LP and ground line LG.Moreover, the intermediate node of switch portion SW is via output
Line LO and connect with motor M.Switch portion SW has first switching element 71 and second switch element 72.In addition, in figure with
The reflux diode that first switching element 71 (or second switch element 72) is connected in parallel, which is equivalent to, parasitizes first switching element
The parasitic diode of 71 (or second switch elements 72).First switching element 71 includes one or more (being in this embodiment three)
Semiconductor element 40, second switch element 72 include one or more (being in this embodiment three) semiconductor elements 40.Later
In explain the structure of first switching element 71 and second switch element 72 in detail.
Capacitance part CP is connected between power supply line LP and ground line LG.Capacitance part CP has capacitor 80.In addition, in capacitor
Portion CP is provided with the connecting line LC for connecting capacitor 80 with power supply line LP.
The construction > of < switching power unit
Then, the structure of switching power unit (semiconductor device 10) is illustrated referring to Fig. 3.Fig. 3 is from the second substrate 30
The schematic top view that side observation first substrate 20 obtains.
In the example in figure 3, there are three power-supply wiring WP, three ground connection to be routed WG and three output cloth for the tool of conductive layer 22
Line WO, a power-supply wiring WP, a ground connection are routed WG and output wiring WO and constitute a wiring group, three wiring groups
It is arranged along first direction (left and right directions in Fig. 3).In addition, as shown in Fig. 2, switching power unit (semiconductor device 10) has
Three first switching elements 71 and three second switch elements 72, a first switching element 71 and a second switch element 72
Constitute a switch portion SW.Moreover, as shown in figure 3, three switch portion SW are respectively corresponded with three wiring groups.In addition, Fig. 3's
In example, three semiconductor elements 40 are connected in parallel and constitute a first switching element 71, and three semiconductor elements 40 are in parallel
It connects and constitutes a second switch element 72.Therefore, in the example in figure 3, there are 18 semiconductor elements 40.Under
Face is conceived to a wiring group and a switch portion SW to carry out saying for each portion of switching power unit (semiconductor device 10)
It is bright.
< power-supply wiring, ground connection wiring and output wiring >
Power-supply wiring WP constitutes a part of power supply line LP shown in Fig. 2, and ground connection wiring WG constitutes ground line shown in Fig. 2
A part of LG, output wiring WO constitute a part of output line LO shown in Fig. 2.
In addition, power-supply wiring WP, ground connection wiring WG and output wiring WO are formed as parallel.Output wiring WO configuration
Between power-supply wiring WP and ground connection wiring WG.In the example in figure 3, power-supply wiring WP, ground connection wiring WG and output wiring
WO is each formed as the plate extended along the second direction (up and down direction in Fig. 3) orthogonal with first direction.
< first switching element >
As described above, in the example in figure 3, first switching element 71 includes three semiconductor elements 40.First is constituted to open
Three semiconductor elements 40 for closing element 71 are arranged along the extending direction of power-supply wiring WP, are respectively arranged in power-supply wiring WP's
Surface and with output wiring WO connect.Specifically, the semiconductor element 40 for constituting first switching element 71 is placed in power supply
It is routed WP, one end (drain electrode/radiating surface) of the semiconductor element 40 is engaged by scolding tin with the surface of power-supply wiring WP, another
One end (source electrode) is connect by the wirings such as closing line component with output wiring WO, and grid passes through wiring component and the
One grid wiring (illustration omitted) connection.
< second switch element >
As described above, in the example in figure 3, second switch element 72 includes three semiconductor elements 40.Second is constituted to open
Three semiconductor elements 40 of element 72 are closed along the extending direction arrangement of output wiring WO, are respectively arranged in the table of output wiring WO
Face and with ground connection wiring WG connect.Specifically, the semiconductor element 40 for constituting second switch element 72 is placed in output cloth
One end (drain electrode/radiating surface) of line WO, the semiconductor element 40 are engaged by scolding tin with the surface of output wiring WO, another
End (source electrode) is connect by the wirings such as closing line material with ground connection wiring WG, and grid passes through wiring component and second
Grid wiring (illustration omitted) connection.
< capacitor and connecting wiring >
In addition, switching power unit (semiconductor device 10) has capacitor 80 and connecting wiring 85.Capacitor 80 is installed
It is electrically connected in ground connection wiring WG and with power-supply wiring WP.Connecting wiring 85 constitutes connecting line LC shown in Fig. 2, by capacitor 80
It is electrically connected with power-supply wiring WP.Specifically, capacitor 80 is placed in ground connection wiring WG, one end (cathode) of the capacitor 80 is logical
It crosses scolding tin and is engaged with ground connection wiring WG, the other end (anode) is electrically connected by connecting wiring 85 with power-supply wiring WP.
In the example in figure 3, capacitor 80 includes nine segmentation capacitors 81.In addition, connecting wiring 85 includes nine points
Cut wiring 86.Moreover, configuring in each ground connection wiring WG of three ground connection wiring WG, there are three segmentation capacitor 81 and three
Segmentation wiring 86.
Three segmentation capacitors 81 for being configured at a ground connection wiring WG are arranged along the extending direction of ground connection wiring WG,
It is installed on the surface of ground connection wiring WG and (specially belongs to identical wiring group with ground connection wiring WG with power-supply wiring WP
Power-supply wiring WP) electrical connection.In the example in figure 3, in plan view, segmentation capacitor 81, which is configured at, is routed WG than ground connection
Outer rim position in the inner part.That is, in this embodiment, in plan view, segmentation capacitor 81 is not prominent from ground connection wiring WG.This
Outside, segmentation capacitor 81 can be for example made of the electrolytic capacitor of surface installing type, can also be by the film of surface installing type
Capacitor is constituted.
Three segmentation wirings 86 for being configured at a ground connection wiring WG will be configured at three segmentations electricity of ground connection wiring WG
Container 81 respectively with power-supply wiring WP (being to belong to the power-supply wiring WP of identical wiring group with ground connection wiring WG in detail)
Electrical connection.In the example in figure 3, segmentation wiring 86 is formed as extending along first direction (3 left and right directions in figure) elongated
Plate.It in addition, segmentation wiring 86 can be for example made of bus, can also be made of, can also be used by others wiring wire jumper
Component is constituted.
In addition, in the example in figure 3, constituting a semiconductor in three semiconductor elements 40 of first switching element 71
Element 40 constitutes a semiconductor element 40 in three semiconductor elements 40 of second switch element 72 and divides capacitor
81 be configured to along first direction (left and right directions in Fig. 3) arrange it is in alignment.
The configuration > in each portion when < overlook view
In the example in figure 3, in plan view, 18 semiconductor elements 40 are arranged as the rectangular of 3 rows 6 column.With
This is identical, and in plan view, 18 temperature detecting element 50 and 18 heat carriers 60 (illustration omitted) are also arranged as 3 rows
6 column it is rectangular and opposite respectively with 18 semiconductor elements 40.In addition, in the example in figure 3, in plan view,
Temperature detecting element 50 and heat carrier 60 (illustration omitted) are configured to the central part positioned at semiconductor element 40.
Effect > of the < based on embodiment
As described above, temperature is installed in the second substrate 30 different from the first substrate 20 of semiconductor element 40 is equipped with
Detecting element 50, thus, it is possible to prevent the heat of (or inhibit) semiconductor element 40 via with original heat-transfer path (in the example
In for from semiconductor element 40 via heat carrier 60 to the heat-transfer path of temperature detecting element 50) different another heat-transfer path
It is transmitted to temperature detecting element 50.It, can be in temperature detecting element thereby, it is possible to inhibit hot crosstalk in temperature detecting element 50
The temperature of semiconductor element 40 is accurately detected in 50.
In addition, the rigidity of the second substrate 30 (being in this embodiment flexible base board 31) is lower than the rigidity of first substrate 20, therefore
The flexibility of the second substrate 30 can be made higher than first substrate 20.Therefore, the deformation of the second substrate 30 can be made come to being installed on the
Opposite distance between the semiconductor element 40 of one substrate 20 and the temperature detecting element 50 for being installed on the second substrate 30 is adjusted
Section.Thereby, it is possible to shorten the opposite distance between semiconductor element 40 and temperature detecting element 50, to promote from semiconductor element
40 heat transfer to temperature detecting element 50, therefore the temperature of semiconductor element 40 can be accurately detected in temperature detecting element 50
Degree.In addition, the deviation for the opposite distance being able to suppress between temperature detecting element 50 and semiconductor element 40 (is examined in multiple temperature
It surveys between element 50, the opposite distance between semiconductor element 40 generates deviation).For example, even if in multiple semiconductor elements
Mounting height generates deviation between 40, since the second substrate 30 can be deformed flexibly, is also able to suppress temperature detection member
The deviation of opposite distance between part 50 and semiconductor element 40.Thereby, it is possible to inhibit due to temperature detecting element 50 with partly lead
The deviation of the detected value of temperature detecting element 50 caused by the deviation of opposite distance between volume elements part 40 is (in multiple temperature detections
Between element 50, and the corresponding detected value of temperature generates deviation).
In addition, being examined by installing multiple temperature in the substrate (be in this embodiment flexible base board 31) different from control base board 15
Element 50 is surveyed, the first substrate 20 for installing multiple semiconductor elements 40 can be arbitrarily adjusted and multiple temperature detecting elements are installed
Opposite distance between 50 substrate (the second substrate 30).Thereby, it is possible to easily adjust temperature detecting element 50 and semiconductor
Opposite distance between element 40, therefore can easily shorten opposite between semiconductor element 40 and temperature detecting element 50
The deviation of opposite distance between distance, inhibition temperature detecting element 50 and semiconductor element 40.
In addition, compared to the feelings for thermally contacting multiple semiconductor elements 40 one to one with multiple temperature detecting elements 50
Condition (such as the case where thermally contacting multiple semiconductor elements 40 with a temperature detecting element 50), by making multiple semiconductor elements
Part 40 thermally contacts one to one with multiple temperature detecting elements 50, can accurately the temperature to multiple semiconductor elements 40 distinguish
Individually detected.
In addition, the case where compared to heat carrier 60 are not present between semiconductor element 40 and temperature detecting element 50, lead to
Crossing is present in heat carrier 60 between semiconductor element 40 and temperature detecting element 50, can promote from semiconductor element 40 to temperature
Spend the heat transfer of detecting element 50.Thereby, it is possible to the temperature of semiconductor element 40 is accurately detected in temperature detecting element 50.Separately
Outside, due to be able to suppress from deviation from semiconductor element 40 to the heat transfer of temperature detecting element 50 (multiple semiconductor elements it
Between, deviation is generated to the easness of the heat transfer of temperature detecting element 50), therefore be able to suppress due to from semiconductor element 40 to temperature
Spend the deviation of the detected value of temperature detecting element 50 caused by the deviation of the heat transfer of detecting element 50.
In addition, the case where compared to heat carrier 60 are constituted using heat conductive rubber, by utilizing thermal grease conduction or thermally conductive bonding
Agent constitutes heat carrier 60, can shorten the opposite distance between semiconductor element 40 and temperature detecting element 50.Thereby, it is possible to
Promote the heat transfer from semiconductor element 40 to temperature detecting element 50, therefore can more accurately be examined in temperature detecting element 50
Survey the temperature of semiconductor element 40.
In addition, compared to temperature detecting element 50 is constituted using thermocouple, by constituting temperature using thermistor
Detecting element 50 can be such that the sensitivity of temperature detecting element 50 improves.
In addition, can accurately be examined by the temperature for accurately detecting semiconductor element 40 in temperature detecting element 50
Survey the temperature anomaly of semiconductor element 40.Thereby, it is possible to the temperature anomalies based on semiconductor element 40 to reliably detect semiconductor
The exception of device 10.For example, when three semiconductor elements for constituting a first switching element 71 (or second switch element 72)
(or two) semiconductor element 40 in 40 (three semiconductor elements 40 being connected in parallel) can not drive (conducting failure)
When, the load of the semiconductor element that can not be driven 40 is undertaken by remaining two (or one) semiconductor elements 40.Thus, stream
The electric current for crossing remaining two (or the one) semiconductor elements 40 becomes more, as a result, this remaining two (or one)
The temperature of semiconductor element 40 has the tendency that getting higher.Thus, first switching element 71 (or the is constituted by accurately detecting
Two switch elements 72) three semiconductor elements 40 temperature and be compared, can determine in three semiconductor elements 40
In with the presence or absence of the semiconductor element 40 of (conducting failure) can not be driven.
(variation 1 of embodiment)
As shown in figure 4, the second substrate 30 can also be made of sensor board 32 in semiconductor device 10.Sensor board
32 are formed as tabular, are the substrates different from control base board 15.Moreover, sensor board 32 is to separate regulation with first substrate 20
The opposite mode in compartment of terrain be arranged between first substrate 20 and control base board 15.In addition, the rigidity of sensor board 32 is than
The rigidity of one substrate 20 is low, same with the rigid phase of control base board 15.Specifically, sensor board 32 has by insulating materials (example
Such as epoxy resin) it constitutes and is formed as flat insulating substrate and is made of and is set to absolutely conductive material (such as copper)
The wiring pattern (conductive layer, illustration omitted) in a face (lower surface in Fig. 4) for edge substrate.Like this, sensor board 32 has
There is structure identical with control base board 15.Moreover, being set to the wiring pattern in a face of sensor board 32 via one or more
A conducting wire 18 and be electrically connected with the wiring pattern (illustration omitted) of a surface side (upper surface side in Fig. 4) for control base board 15.
In addition, in the example in fig. 4, multiple temperature detecting elements 50 are installed on a face of sensor board 32 (with first
The opposite face of substrate 20).Specifically, the wiring diagram of multiple temperature detecting elements 50 and a face for being set to sensor board 32
Case electrical connection.Moreover, multiple temperature detecting elements 50 via the wiring pattern of a surface side of sensor board 32, conducting wire 18 and
The wiring pattern of one surface side of control base board 15 and be electrically connected with control circuit 16.
It is also in the case where as described above constitute, different from the first substrate 20 of semiconductor element 40 is equipped with
Sensor board 32 is equipped with temperature detecting element 50, therefore can inhibit hot crosstalk in temperature detecting element 50, can be in temperature
The temperature of semiconductor element 40 is accurately detected in degree detecting element 50.
In addition, the rigidity of sensor board 32 is lower than the rigidity of first substrate 20, therefore the softness of sensor board 32 can be made
Property is higher than first substrate 20.Therefore, the bending of sensor board 32 can be made come to the semiconductor element 40 for being installed on first substrate 20
It is adjusted with the opposite distance being installed between the temperature detecting element 50 of sensor board 32.Thereby, it is possible to shorten semiconductor
Opposite distance between element 40 and temperature detecting element 50, to promote from semiconductor element 40 to the biography of temperature detecting element 50
Heat, therefore the temperature of semiconductor element 40 can be more accurately detected in temperature detecting element 50.In addition, be able to suppress due to
The detected value of temperature detecting element 50 caused by the deviation of opposite distance between temperature detecting element 50 and semiconductor element 40
Deviation.
In addition, being examined by installing multiple temperature in the substrate (be in this embodiment sensor board 32) different from control base board 15
Element 50 is surveyed, the first substrate 20 for installing multiple semiconductor elements 40 can be arbitrarily adjusted and multiple temperature detecting elements are installed
Opposite distance between 50 substrate (the second substrate 30).Thereby, it is possible to easily adjust temperature detecting element 50 and semiconductor
Opposite distance between element 40, therefore can easily shorten opposite between semiconductor element 40 and temperature detecting element 50
The deviation of opposite distance between distance, inhibition temperature detecting element 50 and semiconductor element 40.
In addition, in the case where the second substrate 30 is made of sensor board 32, preferably by thermal grease conduction or thermally conductive bonding agent
To constitute heat carrier 60.By constituting like this, even if mounting height generates deviation and makes between multiple semiconductor elements 40
The opposite distance obtained between semiconductor element 40 and temperature detecting element 50 generates deviation, can also utilize thermal grease conduction or thermally conductive viscous
The adherence of agent is connect to ensure thermally contacting between semiconductor element 40 and temperature detecting element 50.Thereby, it is possible to inhibit from half
Heat transfer from conductor element 40 to temperature detecting element 50 deviation, as a result, be able to suppress due to from semiconductor element 40 to
The deviation of the detected value of temperature detecting element 50 caused by the deviation of the heat transfer of temperature detecting element 50.
(variation 2 of embodiment)
As shown in figure 5, the second substrate 30 can also be made of control base board 15 in semiconductor device 10.Control base board
15 are set as opposite in a manner of separating defined interval with first substrate 20.In addition, the rigidity of control base board 15 is than the first base
The rigidity of plate 20 is low.
In addition, in the example of fig. 5, multiple temperature detecting elements 50 are installed on another face of control base board 15 (with
The opposite face of one substrate 20).Specifically, another surface side of multiple temperature detecting elements 50 and control base board 15 is (in Fig. 5
Lower face side) wiring pattern (illustration omitted) electrical connection.Moreover, multiple temperature detecting elements 50 are via the another of control base board 15
The wiring pattern (illustration omitted) of a surface side (upper surface side in Fig. 5) for the wiring pattern and control base board 15 of one surface side
And it is electrically connected with control circuit 16.
It is also in the case where as described above constitute, different from the first substrate 20 of semiconductor element 40 is equipped with
Control base board 15 is equipped with temperature detecting element 50, therefore can inhibit hot crosstalk in temperature detecting element 50, can be in temperature
The temperature of semiconductor element 40 is accurately detected in degree detecting element 50.
In addition, the rigidity of control base board 15 is lower than the rigidity of first substrate 20, therefore the softness of control base board 15 can be made
Property is higher than first substrate 20.Therefore, the bending of control base board 15 can be made come to the semiconductor element 40 for being installed on first substrate 20
It is adjusted with the opposite distance being installed between the temperature detecting element 50 of control base board 15.Thereby, it is possible to shorten semiconductor
Opposite distance between element 40 and temperature detecting element 50, to promote from semiconductor element 40 to the biography of temperature detecting element 50
Heat, therefore the temperature of semiconductor element 40 can be more accurately detected in temperature detecting element 50.In addition, be able to suppress due to
The detected value of temperature detecting element 50 caused by the deviation of opposite distance between temperature detecting element 50 and semiconductor element 40
Deviation.
In addition, install multiple temperature detecting elements 50 compared in another substrate different from control base board 15, by
Multiple temperature detecting elements 50 are installed in another face (the opposite face with first substrate 20) of control base board 15, can make multiple temperature
Degree detecting element 50 is easy to carry out with being electrically connected for control circuit 16.
In addition, in the case where the second substrate 30 is made of control base board 15, preferably by thermal grease conduction or thermally conductive bonding agent
To constitute heat carrier 60.By constituting like this, even if generating deviation in 40 mounting heights of multiple semiconductor elements and making
Opposite distance between semiconductor element 40 and temperature detecting element 50 generates deviation, can also utilize thermal grease conduction or thermally conductive bonding
The adherence of agent ensures thermally contacting between semiconductor element 40 and temperature detecting element 50.Thereby, it is possible to inhibit from partly leading
Heat transfer from volume elements part 40 to temperature detecting element 50 deviation, as a result, being able to suppress due to from semiconductor element 40 to temperature
Spend the deviation of the detected value of temperature detecting element 50 caused by the deviation of the heat transfer of detecting element 50.
(other embodiment)
In the above description, the number of temperature detecting element 50 situation identical as the number of semiconductor element 40 is enumerated
For, but the number of temperature detecting element 50 can also be different from the number of semiconductor element 40.It is identical with this, heat carrier 60
Number may be the same or different with the number of temperature detecting element 50, the number of semiconductor element 40.For example, it is also possible to
It is three semiconductor elements 40 and three temperature detection members for constituting first switching element 71 (or second switch element 72)
Part 50 corresponds to one to one, and there are be formed as plate between three semiconductor elements 40 and three temperature detecting elements
One heat carrier 60 of shape.Alternatively, being also possible to three that constitute a first switching element 71 (or second switch element 72)
Semiconductor element 40 is corresponding with a temperature detecting element, three semiconductor elements 40 and a temperature detecting element it
Between there are be formed as a flat heat carrier 60.
In addition, in the above description, enumerating and dividing between multiple semiconductor elements 40 and multiple temperature detecting elements 50
Not there are multiple heat carriers 60 in case where but it is also possible to be in multiple semiconductor elements 40 and multiple temperature detecting elements
There are be formed as a flat heat carrier 60 between 50.
In addition, in the above description, enumerating between multiple semiconductor elements 40 and multiple temperature detecting elements 50 and depositing
In case where having one or more heat carrier 60, but it can be in multiple semiconductor elements 40 and multiple temperature detecting elements
Heat carrier 60 is not present between 50, is directly contacted between multiple semiconductor elements 40 and multiple temperature detecting elements 50.
In addition, in the above description, the number for constituting the semiconductor element 40 of first switching element 71 is not limited to three,
It may be two or less, or four or more.It is identical with this, constitutes the semiconductor element 40 of second switch element 72
Number, number, the number for the segmentation wiring 86 for constituting connecting wiring 85 of the segmentation capacitor 81 for constituting capacitor 80 are also the same.
In addition, constituting the number of the semiconductor element 40 of first switching element 71 and constituting the semiconductor element 40 of second switch element 72
Number may be the same or different.In addition, the number for constituting the segmentation wiring 86 of connecting wiring 85 can be with composition capacitor
The number of the segmentation capacitor 81 of device 80 is identical, can also be more than constituting the number of the segmentation capacitor 81 of capacitor 80.
In addition, in the above description, enumerate in case where capacitor 80 is made of multiple segmentation capacitors 81, but electricity
Container 80 can also be made of a segmentation capacitor 81.For example, capacitor 80 can be by the electrolysis electricity of a surface installing type
Container (or thin film capacitor etc. of a surface installing type) is constituted.
In addition, in the above description, enumerate in case where connecting wiring 85 is made of multiple connecting wirings 85, but even
Connecing wiring 85 can also be made of a segmentation wiring 86.For example, connecting wiring 85 can by a bus (or a wire jumper,
One wiring component etc.) it constitutes.
In addition, in the above description, enumerating capacitor 80 and passing through the feelings that connecting wiring 85 is electrically connected with power-supply wiring WP
For condition, but capacitor 80 can also be electrically connected by connecting wiring 85 with output wiring WO.In addition, below to concrete example
It is described in detail.
In addition, switching power unit (semiconductor device 10) both may be constructed by on-off action by direct current power (or hand over
Galvanic electricity power) inverter that is converted to AC power, it also may be constructed and turned direct current power (or AC power) by on-off action
It is changed to the converter of direct current power.(pass through for example, switching power unit (semiconductor device 10) may be constructed DC/DC converter
Input direct-current electric power is converted to turning for the output direct current power with the voltage value different from input direct-current electric power by on-off action
Parallel operation).In addition, DC/DC converter includes buck converter, boost converter, two-way DC/DC converter.
Switching power unit (semiconductor device 10) constitute buck converter in the case where, one end of capacitor 80 with connect
Ground is routed WG connection, and the other end is electrically connected via inductor with output wiring WO.
Switching power unit (semiconductor device 10) constitute boost converter in the case where, one end of capacitor 80 with connect
Ground is routed WG connection, and the other end is connect with power-supply wiring WP.In addition, in boost converter, when the flowing side for considering electric current
Xiang Shi, output wiring WO is source side, and power-supply wiring WP is outlet side, but is defined herein as: being source side even if being routed WO
Wiring WO is referred to as " output wiring WO ", wiring WP is referred to as " power-supply wiring WP " being routed WP and being outlet side.
In the case where switching power unit (semiconductor device 10) constitutes two-way DC/DC converter, filled in Switching Power Supply
Setting (semiconductor device 10) setting, there are two capacitors 80.Moreover, one end of a capacitor 80 is connect with ground connection wiring WG,
The other end is connect with output wiring WO.One end of another capacitor 80 is connect with ground connection wiring WG, the other end and power supply cloth
Line WP connection.
As described above, in switching power unit (semiconductor device 10), capacitor 80 is installed on ground connection wiring WG's
Surface and with power-supply wiring WP or output wiring WO be electrically connected.In addition, constituting capacitor using multiple segmentation capacitors 81
In the case where 80, can use by multiple segmentation capacitor 81 and power-supply wiring WP or output wiring WO be electrically connected it is multiple
Segmentation is routed 86 to constitute the connecting wiring 85 for capacitor 80 to be electrically connected with power-supply wiring WP or output wiring WO.
Furthermore it is possible to above embodiment, variation are appropriately combined to implement.Above embodiment, deformation
Example is inherently preferred to be illustrated, it is intended that does not lie in the limitation disclosure, the range of its application or its purposes.
Industrial availability
As discussed above, above-mentioned semiconductor device is useful as switching power unit etc..
Description of symbols
10: semiconductor device；11: shell；12: pillar；15: control base board；16: control circuit；17: connector；18: leading
Line；20: first substrate；21: insulating layer；22: conductive layer；23: heat dissipating layer；30: the second substrate；31: flexible base board；32: sensing
Device plate；40: semiconductor element；50: temperature detecting element；60: heat carrier；71: first switching element；72: second switch element；
80: capacitor；81: segmentation capacitor；85: connecting wiring；86: segmentation wiring；WP: power-supply wiring；WG: ground connection wiring；WO: defeated
It is routed out；SW: switch portion；CP: capacitance part.
Claims (10)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-141534 | 2016-07-19 | ||
| JP2016141534A JP2018014356A (en) | 2016-07-19 | 2016-07-19 | Semiconductor device |
| PCT/JP2017/018437 WO2018016162A1 (en) | 2016-07-19 | 2017-05-17 | Semiconductor device |
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|---|---|
| CN109478540A true CN109478540A (en) | 2019-03-15 |
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|---|---|---|---|
| CN201780042024.5A Pending CN109478540A (en) | 2016-07-19 | 2017-05-17 | semiconductor device |
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| Country | Link |
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| JP (1) | JP2018014356A (en) |
| CN (1) | CN109478540A (en) |
| WO (1) | WO2018016162A1 (en) |
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|---|---|---|---|---|
| JP7008241B2 (en) * | 2018-02-23 | 2022-01-25 | パナソニックＩｐマネジメント株式会社 | Switching power supply |
| CN112050954B (en) * | 2019-06-05 | 2022-06-24 | 志圣工业股份有限公司 | Temperature measuring device |
| JP7322654B2 (en) * | 2019-10-15 | 2023-08-08 | 富士電機株式会社 | semiconductor module |
| JP2022160154A (en) * | 2021-04-06 | 2022-10-19 | 三菱重工業株式会社 | Semiconductor device |
| DE102022201176A1 (en) * | 2022-02-04 | 2023-08-10 | Zf Friedrichshafen Ag | Temperature sensor for an inverter for operating an electric drive in an electric vehicle or a hybrid vehicle, inverter with such a temperature sensor |
| US20230326823A1 (en) * | 2022-04-06 | 2023-10-12 | Infineon Technologies Ag | Temperature Sensor Arrangement in Semiconductor Module |
| EP4354103A1 (en) * | 2022-10-13 | 2024-04-17 | Hitachi Energy Ltd | Sensor unit for an electronic device and method for mounting a sensor element |
| EP4354104B1 (en) * | 2022-10-13 | 2025-02-19 | Hitachi Energy Ltd | Electronic device and method for producing an electronic device |
| DE102023208654A1 (en) * | 2023-09-07 | 2025-03-13 | Zf Friedrichshafen Ag | Condition monitoring of a power semiconductor module |
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| WO2018016162A1 (en) | 2018-01-25 |
| JP2018014356A (en) | 2018-01-25 |
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