CN109473331B - Chamber shielding device and semiconductor processing chamber - Google Patents
Chamber shielding device and semiconductor processing chamber Download PDFInfo
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- CN109473331B CN109473331B CN201710807707.7A CN201710807707A CN109473331B CN 109473331 B CN109473331 B CN 109473331B CN 201710807707 A CN201710807707 A CN 201710807707A CN 109473331 B CN109473331 B CN 109473331B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 235000014676 Phragmites communis Nutrition 0.000 claims description 16
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical group [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 239000006227 byproduct Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a chamber shielding device and a semiconductor processing chamber, wherein the chamber shielding device comprises an upper shielding plate, a side shielding plate and a lower shielding plate which are sequentially spliced, the upper shielding plate is electrically connected with the side shielding plate through a first conductor, and the side shielding plate is electrically connected with the lower shielding plate through a conductive assembly. The electric potentials of the upper shielding plate, the side shielding plate and the lower shielding plate of the cavity shielding device are equal, so that the surface discharge phenomenon of the shielding plates can be prevented, the ignition trace on the surfaces of the shielding plates is avoided, and the standard exceeding of the granularity in the cavity is avoided.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing equipment, in particular to a cavity shielding device and a semiconductor processing cavity.
Background
Plasma equipment is widely used in the manufacturing process of products such as semiconductors, solar cells, flat panel displays and the like. Plasma equipment used in current manufacturing processes is mainly based on several categories, such as direct current discharge, capacitively Coupled Plasma (CCP), inductively Coupled Plasma (ICP), and electron cyclotron resonance plasma (ECR). These types of plasmas are widely used in Physical Vapor Deposition (PVD), plasma etching, and plasma Chemical Vapor Deposition (CVD), among others.
In PVD processing equipment, especially for integrated circuit, through-silicon-via, package manufacturing processes, a pre-clean process needs to be performed. The precleaning process is used as part of the PVD process for the purpose of removing contaminants from the wafer surface or residues from the bottom of trenches and vias prior to deposition of the metal film. The precleaning process can obviously improve the adhesion of the deposited film in the subsequent steps and improve the electrical performance and reliability of the chip. The next step after the preclean process is to deposit a metal film by sputtering. In a general precleaning process, a gas (e.g., argon, helium, etc.) is excited into a plasma, and a chemical reaction and a physical bombardment effect of the plasma are utilized to remove impurities from a wafer or a workpiece.
FIG. 1 shows a schematic diagram of a precleaning chamber for performing a precleaning process according to the prior art. An upper cover shielding plate 101, a Faraday shielding plate 102 and a lower shielding plate 105 are respectively arranged on the inner wall of the pre-cleaning chamber, wherein the lower shielding plate 105 is arranged above the base 104, and a vacuum chamber adapter 103 is arranged outside the pre-cleaning chamber and between the vacuum chamber and the pre-cleaning chamber. The inside of the pre-cleaning chamber is a region for generating plasma, and the three shielding plates shield the region to prevent byproducts generated by etching from polluting the side wall of the chamber. The three shield plates may be periodically cleaned.
In the pre-cleaning chamber shown in fig. 1, the faraday shield 102 and the lower shield 105 are connected by a plurality of parts, and different parts have different materials and different electrical conductivities, so that the potentials of the faraday shield 102 and the lower shield 105 in the rf plasma environment are different, and surface charges need to be balanced, thereby causing a surface discharge phenomenon on the surface of the faraday shield 102. A high temperature is generated during the discharge that may exceed the melting point of the faraday shield 102, thus leaving traces of sparks on the shield after ignition. Similarly, there is also a potential difference between the upper cover shield plate 101 and the lower shield plate 105, and a trace of ignition is left on the upper cover shield plate 101 after ignition. In addition, the surface discharge process can also cause particle size superscripts in the pre-clean chamber.
Therefore, it is desirable to develop a shield apparatus that avoids the discharge phenomenon on the surface of the shield plate.
Disclosure of Invention
The invention aims to overcome the surface discharge phenomenon of the traditional shielding device of the pre-cleaning chamber.
In order to achieve the above object, an aspect of the present invention provides a chamber shielding apparatus, including an upper shielding plate, a side shielding plate, and a lower shielding plate which are sequentially spliced to form a plasma generation region, wherein the upper shielding plate is electrically connected to the side shielding plate through a first conductor, and the side shielding plate is electrically connected to the lower shielding plate through a conductive member.
Preferably, the conductive member is a second conductor disposed between the side shield plate and the lower shield plate.
Preferably, the first conductor and/or the second conductor is a spiral-tube-type reed.
Preferably, the material of the first and second conductors is independently selected from beryllium copper, stainless steel, aluminum and titanium.
Preferably, the conductive assembly comprises a flexible conductive strip, a conductive fixing member and a reed which are electrically connected in sequence.
Preferably, a vacuum chamber adapter is arranged outside the chamber, and the conductive fixing piece is arranged on the vacuum chamber adapter.
Preferably, one end of the flexible conductive strip is fixed on the conductive fixing member, and the other end of the flexible conductive strip is electrically connected with the lower shielding plate; the reed is fixed on the conductive fixing piece and is electrically connected with the side shielding plate.
Preferably, the material of the reed, the conductive fixing member and the flexible conductive strip is selected from beryllium copper, stainless steel, aluminum and titanium respectively and independently.
Preferably, the lower shield plate is grounded.
The invention also provides a semiconductor processing chamber which comprises the chamber shielding device.
The invention has the advantages that the upper shielding plate is electrically connected with the side shielding plate through the first conductor, and the side shielding plate is electrically connected with the lower shielding plate through the conductive assembly, so that the electric potentials of the upper shielding plate, the side shielding plate and the lower shielding plate are equal, the surface discharge phenomenon of the shielding plates is prevented, the ignition trace on the surface of the shielding plates is avoided, and the granularity in the cavity is prevented from exceeding the standard.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings.
FIG. 1 shows a schematic diagram of a precleaning chamber for performing a precleaning process in accordance with the prior art;
FIG. 2 shows a schematic view of a chamber shielding apparatus according to an exemplary embodiment of the present invention;
FIG. 3 shows a schematic view of the conductive components of a chamber shield apparatus according to an exemplary embodiment of the present invention;
fig. 4 shows a schematic view of a first conductor of a chamber shielding device according to an exemplary embodiment of the invention.
Description of the reference numerals:
101-upper cover shield plate, 102-faraday shield plate, 103-vacuum chamber adapter, 104 base, 105-lower shield plate;
1-upper shielding plate, 2-side shielding plate, 3-vacuum chamber adapter, 4-base, 5-lower shielding plate, 6-flexible conductive band, 7-conductive fixing piece, 8-reed and 9-first conductor.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present invention have been illustrated in the accompanying drawings, it is to be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
The chamber shielding device comprises an upper shielding plate, a side shielding plate and a lower shielding plate which are sequentially spliced, wherein the upper shielding plate is electrically connected with the side shielding plate through a first conductor, and the side shielding plate is electrically connected with the lower shielding plate through a conductive assembly.
Through setting up first conductor at last shield plate and side shield plate, set up conducting assembly between side shield plate and lower shield plate for go up shield plate, side shield plate and shield plate electricity each other are connected, thereby the electric potential equals, can overcome shield plate surface phenomenon of striking sparks, and then avoids the shield plate surface to leave the vestige of striking sparks, also can avoid the interior granularity of cavity to exceed standard.
In one example, the conductive component is a second conductor disposed between the side shield plate and the lower shield plate.
A second conductor is provided between the side shield plate and the lower shield plate, so that the side shield plate and the lower shield plate are directly and electrically connected through the second conductor, and thus the potentials are equal.
In one example, the first conductor and/or the second conductor is a spiral-tube-type spring.
In order to ensure that the first conductor is in good contact with the upper shielding plate and the side shielding plate, the first conductor can be a spiral tube type spring. Similarly, in order to ensure that the second conductor is in good contact with the side shield plate and the lower shield plate, the second conductor may be a spiral tube type spring.
In one example, the material of the first and second conductors are each independently selected from beryllium copper, stainless steel, aluminum, and titanium.
In order to ensure that the first conductor and the second conductor have good conductivity, the materials of the first conductor and the second conductor can be respectively and independently selected from beryllium copper, stainless steel, aluminum and titanium. Most preferably, the first conductor and the second conductor are both spiral tube type beryllium copper reeds.
In one example, the conductive assembly includes a flexible conductive strip, a conductive fastener, and a spring that are electrically connected in sequence.
Due to the limitation of the inner wall of the vacuum chamber, the installation space between the side shielding plate and the lower shielding plate is usually small, which is not beneficial to installing the second conductor between the side shielding plate and the lower shielding plate. Therefore, the side shielding plate and the lower shielding plate are indirectly connected through the flexible conductive belt, the conductive fixing piece and the spring plate which are electrically connected in sequence, so that a second conductor is prevented from being directly installed between the side shielding plate and the lower shielding plate, and installation convenience is improved.
In one example, a vacuum chamber adapter is provided outside the chamber and a conductive fixture is provided on the vacuum chamber adapter.
The chamber shield is typically disposed within a semiconductor processing chamber, such as a preclean chamber of a physical vapor deposition apparatus. The pre-clean chamber is typically a vacuum chamber. The vacuum chamber adapter is used for sealing the vacuum chamber. In prior art devices, the vacuum chamber adapter is usually close to the side shield plate and the lower shield plate, so the conductive fixing member can be arranged on the vacuum chamber adapter, and the vacuum chamber adapter can play a role in fixing and supporting.
In one example, one end of the flexible conductive strip is secured to the conductive fixture by a fastener. For example, one end of the flexible conductive strip is fixed to the conductive fixing member by a screw. The screw may be made of copper, and in order to increase the conductivity and oxidation resistance, the surface may be plated with silver and then with gold. The other end of the flexible conductive tape is also fixed to the lower shield plate by a screw.
In one example, the reed is secured to the conductive mount by a fastener. For example, the spring plate is fixed to the conductive fixing member by a screw, and similarly, the screw may be made of copper, and in order to increase the conductivity and oxidation resistance, silver may be plated on the surface and then gold may be plated. The reed is electrically connected with the side shielding plate.
In one example, the material of the reed, the conductive mount and the flexible conductive strip is independently selected from beryllium copper, stainless steel, aluminum and titanium, respectively, to ensure good conductivity. Preferably, in order to increase the conductivity and oxidation resistance, the surface of the flexible conductive tape is plated with silver and then with gold.
In one example, the screw has a gauge M4 with a tightening torque no less than 2n × M.
In one example, the lower shield plate is grounded, and the potentials of the upper shield plate, the side shield plate, and the lower shield plate are equal.
Exemplary embodiments of the present invention also provide a semiconductor processing chamber including the chamber shielding apparatus.
Examples
Fig. 2 shows a schematic view of a chamber shielding apparatus according to an exemplary embodiment of the present invention, fig. 3 shows a schematic view of a conductive component of the chamber shielding apparatus according to an exemplary embodiment of the present invention, and fig. 4 shows a schematic view of a first conductor of the chamber shielding apparatus according to an exemplary embodiment of the present invention.
As shown in fig. 2 to 4, the chamber shielding apparatus includes an upper shielding plate 1, a side shielding plate 2, and a lower shielding plate 5 which are sequentially spliced, where the upper shielding plate 1 is electrically connected to the side shielding plate 2 through a first conductor 9, and the side shielding plate 2 is electrically connected to the lower shielding plate 5 through a conductive component.
The region formed by splicing the upper shielding plate 1, the side shielding plate 2 and the lower shielding plate 5 is a plasma generating region, and the upper shielding plate 1, the side shielding plate 2 and the lower shielding plate 5 are used for shielding plasma in the region and preventing byproducts generated by etching from polluting the side wall of the chamber. The upper shield plate 1, the side shield plates 2, and the lower shield plate 5 may be periodically cleaned.
The first conductor 9 is a spiral tube-shaped beryllium copper reed, and the conductive assembly comprises a flexible conductive strip 6, a conductive fixing part 7 and a reed 8 which are electrically connected in sequence. The flexible conductive belt 6 is a copper belt, the thickness of the flexible conductive belt is 0.2mm, the conductive fixing piece 7 is made of copper, the surface of the conductive fixing piece is plated with silver firstly and then plated with gold, and the reed 8 is a beryllium copper reed.
The reed 8 is fixed to the conductive fixing member 7 by a screw (not shown) so that the reed can be elastically contacted with the side shield plate 2; both ends of the flexible conductive strip 6 are fixed to the conductive fixing member 7 and the lower shielding plate 5 by screws (not shown), respectively; the lower shield plate 5 is grounded. In this way, the potentials of the side shield plates 2 and the lower shield plate 5 are equalized.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (6)
1. A semiconductor processing chamber comprises a chamber shielding device, wherein the chamber shielding device is arranged in the semiconductor processing chamber and comprises an upper shielding plate, a side shielding plate and a lower shielding plate which are sequentially spliced so as to form a plasma generation area, and the chamber shielding device is used for preventing a byproduct generated by etching from polluting the side wall of the semiconductor processing chamber;
the conductive assembly comprises a flexible conductive band, a conductive fixing piece and a reed which are electrically connected in sequence, one end of the flexible conductive band is fixed on the conductive fixing piece, and the other end of the flexible conductive band is electrically connected with the lower shielding plate; the reed is fixed on the conductive fixing piece and is electrically connected with the side shielding plate.
2. The semiconductor processing chamber of claim 1, wherein the first conductor is a spiral-tube-type spring.
3. The semiconductor processing chamber of claim 1, wherein the material of the first conductor is selected from beryllium copper, stainless steel, aluminum, and titanium.
4. The semiconductor processing chamber of claim 1, wherein a vacuum chamber adapter is disposed outside the semiconductor processing chamber, and the conductive fixture is disposed on the vacuum chamber adapter.
5. The semiconductor processing chamber of claim 1, wherein the spring, the conductive mount, and the flexible conductive strip are each independently selected from beryllium copper, stainless steel, aluminum, and titanium.
6. The semiconductor processing chamber of claim 1, wherein the lower shield plate is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710807707.7A CN109473331B (en) | 2017-09-08 | 2017-09-08 | Chamber shielding device and semiconductor processing chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710807707.7A CN109473331B (en) | 2017-09-08 | 2017-09-08 | Chamber shielding device and semiconductor processing chamber |
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| Publication Number | Publication Date |
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| CN109473331A CN109473331A (en) | 2019-03-15 |
| CN109473331B true CN109473331B (en) | 2022-11-25 |
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| CN201710807707.7A Active CN109473331B (en) | 2017-09-08 | 2017-09-08 | Chamber shielding device and semiconductor processing chamber |
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| CN109935513B (en) * | 2019-03-29 | 2021-08-06 | 江苏鲁汶仪器有限公司 | Ion beam etching system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6221221B1 (en) * | 1998-11-16 | 2001-04-24 | Applied Materials, Inc. | Apparatus for providing RF return current path control in a semiconductor wafer processing system |
| JP2000200777A (en) * | 1999-01-07 | 2000-07-18 | Anelva Corp | High frequency plasma substrate processing equipment |
| US6398929B1 (en) * | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
| JP4021601B2 (en) * | 1999-10-29 | 2007-12-12 | 株式会社東芝 | Sputtering apparatus and film forming method |
| CN1314075C (en) * | 2001-08-28 | 2007-05-02 | 现代半导体美国公司 | Shielding system for plasma chamber |
| US9184072B2 (en) * | 2007-07-27 | 2015-11-10 | Mattson Technology, Inc. | Advanced multi-workpiece processing chamber |
| KR101216790B1 (en) * | 2008-07-31 | 2012-12-28 | 캐논 아네르바 가부시키가이샤 | Plasma processing apparatus and method for manufacturing electronic device |
| CN102365906B (en) * | 2009-02-13 | 2016-02-03 | 应用材料公司 | To reflux bus for the RF bus of plasma chamber electrode and RF |
| JP2010205967A (en) * | 2009-03-04 | 2010-09-16 | Tokyo Electron Ltd | Plasma etching method, plasma etching device, and computer storage medium |
| DE102009018912A1 (en) * | 2009-04-28 | 2010-11-18 | Leybold Optics Gmbh | Method for generating a plasma jet and plasma source |
| CN103014745B (en) * | 2011-09-28 | 2015-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma pre-cleaning device |
| CN103854945A (en) * | 2012-12-05 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma equipment and reaction chamber thereof |
| CN105655221B (en) * | 2014-11-12 | 2018-11-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN105734520B (en) * | 2014-12-11 | 2018-08-24 | 北京北方华创微电子装备有限公司 | Processing chamber |
| JP6361495B2 (en) * | 2014-12-22 | 2018-07-25 | 東京エレクトロン株式会社 | Heat treatment equipment |
| US20180358212A1 (en) * | 2015-12-09 | 2018-12-13 | Applied Materials, Inc. | System configured for sputter deposition on a substrate, shielding device for a sputter deposition chamber, and method for providing an electrical shielding in a sputter deposition chamber |
| CN106971932B (en) * | 2016-01-13 | 2019-04-23 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and semiconductor equipment |
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