CN109471294A - A kind of preparation method and display device of black matrix" - Google Patents
A kind of preparation method and display device of black matrix" Download PDFInfo
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- CN109471294A CN109471294A CN201811537806.9A CN201811537806A CN109471294A CN 109471294 A CN109471294 A CN 109471294A CN 201811537806 A CN201811537806 A CN 201811537806A CN 109471294 A CN109471294 A CN 109471294A
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- 239000011159 matrix material Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000011161 development Methods 0.000 claims abstract description 9
- 230000001360 synchronised effect Effects 0.000 claims abstract description 8
- 238000007711 solidification Methods 0.000 claims abstract description 6
- 230000008023 solidification Effects 0.000 claims abstract description 6
- 229910001507 metal halide Inorganic materials 0.000 claims description 7
- 150000005309 metal halides Chemical class 0.000 claims description 7
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000004040 coloring Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000007634 remodeling Methods 0.000 description 2
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical group [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- SDLBJIZEEMKQKY-UHFFFAOYSA-M silver chlorate Chemical compound [Ag+].[O-]Cl(=O)=O SDLBJIZEEMKQKY-UHFFFAOYSA-M 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Optical Filters (AREA)
Abstract
The present invention provides the preparation method and display device of a kind of black matrix", including provides a substrate；Surface is coated with one layer of refractive index thermal control material on the substrate；Prebake conditions are carried out to the refractive index thermal control material, form a middle layer；It is coated with a kind of photoresist on the middle layer, forms a photoresist layer；One mask plate is placed on above the photoresist layer or below the substrate；The photoresist layer is irradiated from top to bottom using ultraviolet light, alternatively, the substrate is irradiated from bottom to top, so that middle layer solidification development synchronous with the photoresist layer；Removal mask plate simultaneously toasts the substrate, so that the middle layer and the photoresist layer synchronization pattern, can save the efficiency for improving production in this way.
Description
Technical field
The present invention relates to field of liquid crystal display, the preparation method and display device of especially a kind of black matrix".
Background technique
LCD display can drop low ambient light in the reflection of display surface by reducing reflecting rate, so that in bright ring
The actual contrast that human eye perceives under border rises, and enhances image quality effect.The upper surface of existing LCD, it is anti-in addition to polaroid
Other than penetrating, be prepared in upper substrate glass inner side black matrix" can also generate it is reflective.By improving the reflective advantageous of black matrix"
In the reflectivity for reducing LCD entirety, contrast is promoted.
Existing patent proposes to increase in one layer of organic or inorganic refractive index between general black matrix and glass substrate
The method of interbed is come the method that reduces black matrix" reflectivity.But it is had the following problems: in manufacturing process if using entire
Middle layer, on black matrix" on color membrane substrates, with the reflectivity of exterior domain and transmitance, there may be influence, intermediate layer materials
It may cause the absorption of transmitted light；If intermediate layer material is with using inorganic matter such as silicon oxynitride etc., making its patterning and black
Matrix is consistent, then needs to increase by one of dry etching processing procedure, increase the complexity of preparation.
Summary of the invention
The object of the present invention is to provide a kind of preparation methods of black matrix", can eliminate the dry etching of middle layer
The step of journey.
In order to solve the above technical problems, the present invention provides a kind of preparation method of black matrix", include the following steps: to provide
One substrate；Surface is coated with one layer of refractive index thermal control material on the substrate；Prebake conditions are carried out to the refractive index thermal control material,
Form a middle layer；It is coated with a kind of photoresist on the middle layer, forms a photoresist layer；One mask plate is placed on described
Above photoresist layer or below the substrate；The photoresist layer is irradiated from top to bottom using ultraviolet light, alternatively, irradiating institute from bottom to top
Substrate is stated, so that middle layer solidification development synchronous with the photoresist layer；Removal mask plate simultaneously toasts the substrate, so that institute
State middle layer and the photoresist layer synchronization pattern.
Further, in a step of substrate is provided, the first alignment mark is provided on the substrate；By mask plate
In the step of being placed below the photoresist layer top or the substrate, the mask plate is provided with the second alignment mark, described
Second alignment mark is corresponded with first alignment mark respectively.
Further, first alignment mark is set to four corners of substrate, and second alignment mark is set to
Four corners of mask plate.
Further, in the step of surface is coated with one layer of refractive index thermal control material on the substrate, the middle layer
Refractive index is 1.45~1.9, and the coating thickness of the middle layer is 35~85nm.
Further, the substrate is color membrane substrates or glass substrate；The refractive index thermal control material is siloxane-based poly-
Close object.
Further, the photoresist includes negative photoresist and metal halide, and the photoresist layer is by black light
Hinder the black-matrix layer being prepared into.
Further, in the step of carrying out prebake conditions to the refractive index thermal control material, baking temperature is 70~110
℃；In in the removal mask plate and the step of toast the substrate, baking temperature is 230~300 DEG C.
Further, the middle layer and the photoresist layer are with the photoresist that is positive, alternatively, the middle layer and the photoresist layer
With the photoresist that is negative.
Another object of the present invention provides a kind of display device, including a substrate, a middle layer and photoresist layer, a substrate, one
Photoresist layer and middle layer, the middle layer are set between the substrate and the photoresist layer；The middle layer and the photoresist
Layer is synchronized to solidify the side for being developed in the substrate, and the pattern of the middle layer is corresponding with the pattern of the photoresist layer.
Further, the substrate is equipped with the first alignment mark, and the mask plate is equipped with the second alignment mark, described
Second alignment mark is corresponded with first alignment mark respectively.
The beneficial effects of the present invention are: the invention proposes a kind of preparation methods of black matrix", and solid by a UV
The method of change patterns middle layer together with black matrix", to reduce the dry etching processing procedure of middle layer, improves production effect
Rate.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and examples.
Fig. 1 is the flow chart of black matrix" preparation method in the present invention；
Fig. 2 is the structural schematic diagram of substrate of the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of substrate of the embodiment of the present invention and middle layer；
Fig. 4 is the structural schematic diagram of substrate of the embodiment of the present invention, middle layer and photoresist layer；
Fig. 5 is the structural schematic diagram of mask plate of embodiment of the present invention illumination；
Fig. 6 is the first alignment mark schematic diagram of Fig. 2 substrate；
Fig. 7 is the second alignment mark schematic diagram on Fig. 5 mask plate；
Fig. 8 is the black matrix structure schematic diagram that present invention preparation is completed；
Fig. 9 provides the structural schematic diagram that ultraviolet light exposes from bottom to top for the present invention；
Figure 10 is display device provided by the invention.
Specific embodiment
The explanation for being below each embodiment is can to use the specific reality implemented to illustrate the present invention with reference to additional schema
Apply example.The direction term that the present invention is previously mentioned, for example, above and below, front, rear, left and right, inside and outside, side etc., be only with reference to accompanying drawings
Direction.The element title that the present invention mentions, such as first, second etc., it is only to discriminate between different components, it can better table
It reaches.The similar unit of structure is given the same reference numerals in the figure.
Herein with reference to the accompanying drawings to detailed description of the present invention embodiment.The present invention can show as many different forms,
The present invention should not be only interpreted as specific embodiment set forth herein.It is to explain reality of the invention that the present invention, which provides embodiment,
Border application, to make others skilled in the art it will be appreciated that various embodiments of the present invention and being suitable for specific intended application
Various modifications scheme.
As shown in Figure 1, the present invention provides a kind of preparation method of black matrix", include the following steps S1~S7.
S1, as shown in Fig. 2, providing a substrate 21 first, the first alignment mark 211 is provided on the substrate 21.Substrate
21 can be used color membrane substrates or common glass substrate.In the present invention, the middle layer of addition and black matrix" is disposable
Patterning, is used to divide adjacent colour cell, blocks the gap of color, prevent light leakage or colour mixture；And middle layer can drop
The reflectivity of low black matrix" reduces the reflectivity of entire LCD to reduce the reflectivity of panel, can also share polaroid
The difficulty and cost of surface treatment.As shown in fig. 6, substrate 21 is rectangle, the first alignment mark 211 is arranged in the four of substrate 21
A angle, because using glass substrate, so not needing the alignment mark with reference to preceding preparation process in preparation process of the invention.
The shape of first alignment mark 211 can be rectangle, circle, the preferably circular label of the present invention.First alignment mark 211 can be this
It invents the coating of other levels and mask plate is placed and provides reference by location.
S2, as shown in figure 3,21 upper surface of substrate be coated with one layer of refractive index thermal control material.Refractive index thermal control material
For a siloxane-based material, the material is generally Si (OR)4Or Ti (OR)4The equal pure salt monomer of metals, the refractive index characteristic of material
Change with the variation of temperature, the refractive index of middle layer is 1.45~1.9, and coating thickness is 35~85nm.Preferably, it rolls over
The rate of penetrating can choose 1.45,1.50,1.6,1.7 or 1.90, be coated with middle layer 22 thickness can for 35nm, 45nm,
55nm, 75nm or 85nm.
S3, third step carry out prebake conditions to the refractive index thermal control material, form a middle layer 22.It is coated in middle layer 22
In step, the material being applied is transparent gel-form, therefore to carry out prebake conditions to material, stablizes it and forms middle layer
22, with the production of step after facilitating.In step s3, the temperature of prebake conditions can be 70 DEG C, 80 DEG C, 90 DEG C or 110 DEG C.
S4, as shown in figure 4, be coated with photoresist in the middle layer 22, form a photoresist layer 23.Photoresist is main
It is negative photoresist and metal halide, photoresist layer 23 is the black matrix" being prepared by black photoresist, and photoresist layer 23 can also be with
Referred to as black-matrix layer.In the state of unexposed, pellucidity is presented in photoresist layer 23.Be coated with photoresist layer 23 with a thickness of
0.8um, 1.0um, 1.4um or 1.5um.Preferably, metal halide is silver bromide or silver chlorate, meeting during exposure
Blackening forms black matrix".The negative photoresist is the main component of photoresist system.It is solable matter when unexposed,
Developer solution is dissolved in, is cured after exposure, becomes insoluble material；And metal halide is silver bromide, is decomposed after exposure
Metal particle is formed, metal particle can be rendered as black since particle is small, have high light intensity value.
S5, as shown in figure 5, mask plate 24 is placed on 21 lower section of 23 top of the photoresist layer or the substrate, such as Fig. 7
Shown, the mask plate is provided with the second alignment mark 241.Mask plate 24 has multiple mask plate through-holes, and multiple mask plates are logical
The pattern that hole is formed is consistent with the pattern of photoresist layer 23, and second alignment mark 241 is arranged in four corners of mask plate, described
When mask plate 24 is installed, second alignment mark 241 is corresponded with first alignment mark 211.
S6, it irradiates the photoresist layer 23 from top to bottom using ultraviolet light, alternatively, irradiating the substrate 21 from bottom to top, makes
Obtain middle layer solidification development synchronous with the photoresist layer.Wherein, position corresponding with 24 through-hole of mask plate on photoresist layer 23
For irradiation region, the metal halide in the photoresist layer 23 in irradiation region is decomposed to form metal particle, so that the light in irradiation region
Black is presented in resistance layer 23, to realize the function of black matrix" shading, while the photoresist layer 23 in irradiation region become insoluble in it is aobvious
Shadow liquid, to be remained in subsequent development step.And 22 photoresist characteristic of middle layer is identical as 23 photoresist characteristic of photoresist layer,
It can be eliminated by after ultraviolet exposure with developer solution.To keep middle layer 22 and the photoresist layer 23 in irradiation region insoluble simultaneously
In developer solution, unexposed area can be removed with developer solution so that the middle layer 22 formed with photoresist layer 23 it is identical
Pattern, the two is synchronous to realize solidification development.It, can be to exposure area with developer solution after ultraviolet light carries out illumination to mask plate
It is eliminated, developed liquid can be eliminated simultaneously so as to cause photoresist layer 23 and middle layer 22, it is possible to reduce independent centering before
The step of interbed photoetching, reaches while solidifying development.As shown in figure 9, can choose the direction of illumination of ultraviolet from light
It irradiates, or can be irradiated from the lower section of substrate 21 above resistance layer 23, this has no effect on of the invention as a result, of the invention excellent
Illumination is carried out above the slave photoresist layer 23 of choosing.
S7, removal mask plate 24 simultaneously toast the substrate, so that the middle layer 22 and 23 synchronization pattern of photoresist layer
Change.The selection of mask plate 24 is positive photoresist, through illumination after, can be eliminated with developer solution.It is last available such as Fig. 8
Shown in black matrix structure.
Because baking temperature is not only so that the tentatively sizing of middle layer 22, makes middle layer 22 in above-mentioned S3 step
Refractive index be optimal, need to carry out secondary baking to it, so that the refractive index of the middle layer 22 advanced optimizes, together
When make the middle layer 22 form identical pattern with the photoresist layer 23 so that the two synchronization pattern.
In the present invention, the temperature range of secondary baking is 230~300 DEG C, preferably 230 DEG C, 250 DEG C, 270 DEG C, 300
DEG C, after baking, the middle layer 22 is fixed on substrate with being stabilized with the photoresist layer 23, is formed as shown in Figure 5
Structure.Secondary baking can allow the refractive index of middle layer 22 to reach in 1.45~1.9 ranges, and then can reduce black matrix"
It is reflective, the light-reflecting property of entirety LCD is reduced, the difficulty and cost of polaroid surface treatment can also be shared.
Specifically, the middle layer, by taking a kind of siloxane-based material as an example, material is mainly Si (OR)4Or Ti (OR)4Deng
The pure salt monomer of the metal is carried out polymerization reaction first and generates inorganic polymer or organic-inorganic mixed type by the pure salt monomer of metal
Polymeric siloxane systems, the molecular structural formula of the polymer isIt again will polymerization
Object is coated to forming glue-line on the substrate, and is eventually formed stable molecular structure by ultraviolet light baking and can be made material
The refractive index of material controls in 1.45~1.9, and the molecular structural formula of the middle layer eventually formed is as follows.
It,, can be with so substrate 21 should have characteristic resistant to high temperature since baking temperature is higher in embodiment provided by the invention
It should not influence its normal work.Middle layer 22 and the photoresist characteristic of photoresist layer 23 should be identical, and the present invention selects negative photoresist, the spy
Property be after exposure can not developed liquid eliminate, positive photoresist can be selected in other embodiments, this has no effect on achievement of the present invention.
As shown in Figure 10, the present invention provides display device 20, which includes a substrate 21, a middle layer 22, a light
Group layer 23, a coloring layer 29, an ITO layer 25, a liquid crystal layer 26, a thin film transistor (TFT) array 27 and a cover board 28.Middle layer 22
Set on the side of substrate 21, photoresist layer 23 is set to side of the middle layer 22 far from the substrate 21；The middle layer 22 with
The photoresist layer 23 synchronizes the development that is cured, and synchronization pattern.22 material of middle layer is the folding of siloxane-based polymers
Penetrate rate thermal control material；23 material of photoresist layer includes negative photoresist and metal halide.Coloring layer 29 and middle layer 22 and
Photoresist layer 23 is arranged alternately on substrate.ITO layer 25 is set to the one of the separate middle layer 22 of coloring layer 29 and photoresist layer 23
Side.Substrate 21 is oppositely arranged with cover board 28, and there are a spacing (not to indicate) filling liquid crystal layer 26 therebetween.The thin film transistor (TFT) array
27 are set to the side for closing on liquid crystal layer 27 of the cover board 28.ITO layer 25 and thin film transistor (TFT) array 27 cooperate, with electric field control
Whether making the liquid crystal molecule rotation of the liquid crystal layer 26, thus whether control passes through from the light of back light system (figure does not indicate).
It is incident on coloring layer 29 and photoresist layer 23 by the light of liquid crystal layer 26, the coloring layer 29 only passes through red, blue, green three kinds of face
Coloured light line, photoresist layer 23 prevent light from revealing, the middle layer 22 and 23 characteristic of photoresist layer for blocking 29 pipelines of coloring layer
It is identical, further prevent light leakage.
In 20 preparation process of display device, 211 (Fig. 6 acceptance of the bid of the first alignment mark is equipped on the substrate 21
Note), first alignment mark 211 is set to four corners of the substrate 21, and the mask plate 24 is equipped with the second register guide
Remember 241 (marking in Fig. 7), second alignment mark 241 is set to four corners of the mask plate 24 and respectively with described the
One alignment mark 211 corresponds.The display device synchronizes figure using the solidification development synchronous with photoresist layer 23 of middle layer 22
Case finally removes mask plate, and the display device reduces 22 dry etching processing procedure of middle layer, increases process flow efficiency.
It should be pointed out that can also have the embodiment of a variety of transformation and remodeling for the present invention through absolutely proving,
It is not limited to the specific embodiment of above embodiment.Above-described embodiment is as just explanation of the invention, rather than to hair
Bright limitation.In short, protection scope of the present invention should include that those are obvious to those skilled in the art
Transformation or substitution and remodeling.
Claims (10)
1. a kind of preparation method of black matrix", which comprises the steps of:
One substrate is provided；
Surface is coated with one layer of refractive index thermal control material on the substrate；
Prebake conditions are carried out to the refractive index thermal control material, form a middle layer；
It is coated with a kind of photoresist on the middle layer, forms a photoresist layer；
One mask plate is placed on above the photoresist layer or below the substrate；
The photoresist layer is irradiated from top to bottom using ultraviolet light, alternatively, the substrate is irradiated from bottom to top, so that the middle layer
Solidification development synchronous with the photoresist layer；
Removal mask plate simultaneously toasts the substrate, so that the middle layer and the photoresist layer synchronization pattern.
2. the preparation method of black matrix" according to claim 1, which is characterized in that
In a step of substrate is provided,
The first alignment mark is provided on the substrate；
In the step of being placed on mask plate above the photoresist layer or below the substrate,
The mask plate is provided with the second alignment mark,
Second alignment mark is corresponded with first alignment mark respectively.
3. the preparation method of black matrix" according to claim 2, which is characterized in that
First alignment mark is set to four corners of substrate,
Second alignment mark is set to four corners of mask plate.
4. the preparation method of black matrix" according to claim 1, which is characterized in that
Surface was coated in the step of one layer of refractive index thermal control material on the substrate,
The refractive index of the middle layer is 1.45~1.9,
The coating thickness of the middle layer is 35~85nm.
5. the preparation method of black matrix" according to claim 1, which is characterized in that
The substrate is color membrane substrates or glass substrate；
The refractive index thermal control material is siloxane-based polymers.
6. the preparation method of black matrix" according to claim 1, which is characterized in that
The photoresist includes negative photoresist and metal halide,
The photoresist layer is the black-matrix layer being prepared by black photoresist.
7. the preparation method of black matrix" according to claim 1, which is characterized in that
In the step of carrying out prebake conditions to the refractive index thermal control material,
Baking temperature is 70~110 DEG C；
In in the removal mask plate and the step of toast the substrate,
Baking temperature is 230~300 DEG C.
8. the preparation method of black matrix" according to claim 1, which is characterized in that
The middle layer and the same photoresist that is positive of the photoresist layer, alternatively,
The middle layer and the photoresist layer are the same as the photoresist that is negative.
9. a kind of display device, which is characterized in that including
Substrate, photoresist layer, middle layer and mask plate,
The middle layer is set between the substrate and the photoresist layer；
The middle layer and the photoresist layer are synchronized to solidify the side for being developed in the substrate,
The pattern of the middle layer is corresponding with the pattern of the photoresist layer.
10. display device according to claim 9, which is characterized in that
The substrate is equipped with the first alignment mark, and the mask plate is equipped with the second alignment mark, second alignment mark
It is corresponded respectively with first alignment mark.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811537806.9A CN109471294A (en) | 2018-12-15 | 2018-12-15 | A kind of preparation method and display device of black matrix" |
| PCT/CN2019/078210 WO2020118937A1 (en) | 2018-12-15 | 2019-03-15 | Preparation method for black matrix and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811537806.9A CN109471294A (en) | 2018-12-15 | 2018-12-15 | A kind of preparation method and display device of black matrix" |
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| Publication Number | Publication Date |
|---|---|
| CN109471294A true CN109471294A (en) | 2019-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811537806.9A Pending CN109471294A (en) | 2018-12-15 | 2018-12-15 | A kind of preparation method and display device of black matrix" |
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|---|---|
| CN (1) | CN109471294A (en) |
| WO (1) | WO2020118937A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110780375A (en) * | 2019-11-15 | 2020-02-11 | 京东方科技集团股份有限公司 | Polarizer and preparation method thereof, display panel and display device |
| CN110993825A (en) * | 2019-12-19 | 2020-04-10 | 京东方科技集团股份有限公司 | OLED plate manufacturing method and OLED plate |
| CN111352316A (en) * | 2020-04-15 | 2020-06-30 | Tcl华星光电技术有限公司 | Photoresist bleaching and baking method and device thereof |
| CN114038882A (en) * | 2021-10-27 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | A kind of micro light-emitting diode display and its manufacturing method |
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| CN114038882A (en) * | 2021-10-27 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | A kind of micro light-emitting diode display and its manufacturing method |
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