CN109449916A - A kind of circuit for realizing the compatible positive-negative connected of dc power interface - Google Patents
A kind of circuit for realizing the compatible positive-negative connected of dc power interface Download PDFInfo
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- CN109449916A CN109449916A CN201811603882.5A CN201811603882A CN109449916A CN 109449916 A CN109449916 A CN 109449916A CN 201811603882 A CN201811603882 A CN 201811603882A CN 109449916 A CN109449916 A CN 109449916A
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- 230000005669 field effect Effects 0.000 claims abstract description 131
- 230000000694 effects Effects 0.000 claims description 11
- 230000001629 suppression Effects 0.000 claims description 9
- 230000001052 transient effect Effects 0.000 claims description 9
- 230000002457 bidirectional effect Effects 0.000 claims 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000037431 insertion Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000008676 import Effects 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
- H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0083—Converters characterised by their input or output configuration
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
本发明实施例涉及电路技术领域，公开了一种实现直流电源接口兼容正反接的电路，该电路包括：电源接口输入端的第一端口分别和第一场效应晶体管和第三场效应晶体管的源极电连接，以及第二场效应晶体管和第四场效应晶体管的栅极电连接；输入端的第二端口分别和第一场效应晶体管和第三场效应晶体管的栅极，以及第二场效应晶体管和第四场效应晶体管的源极电连接；输出端的第二端口分别和第一场效应晶体管和第二场效应晶体管的漏极电连接后接地；输出端的第一端口分别和第三场效应晶体管和第四场效应晶体管的漏极电连接。通过上述方式，可以实现在保护后端负载电路芯片的同时，实现直流电源接口灵活插接。Embodiments of the present invention relate to the field of circuit technologies, and disclose a circuit for implementing a DC power interface compatible with a positive and negative connection, the circuit comprising: a first port of a power interface input end and a source of a first field effect transistor and a third field effect transistor, respectively a pole electrical connection, and a gate electrical connection of the second field effect transistor and the fourth field effect transistor; a second port at the input end and a gate of the first field effect transistor and the third field effect transistor, respectively, and a second field effect transistor And electrically connecting with the source of the fourth field effect transistor; the second port of the output terminal is electrically connected to the drains of the first field effect transistor and the second field effect transistor, respectively; the first port of the output terminal and the third field effect transistor are respectively And electrically connected to the drain of the fourth field effect transistor. In the above manner, it is possible to realize flexible insertion of the DC power interface while protecting the back-end load circuit chip.
Description
Technical field
The present embodiments relate to field of circuit technology, and in particular to a kind of to realize that dc power interface is compatible with positive-negative connected
Circuit.
Background technique
The counnter attack connection function of consideration veneer dc power interface is usually required in plate grade hardware system.By add it is some enter
Mouthful protection circuit come prevent power interface be reversely connected caused by damage backend load circuit chip failure.Common practice has two
Kind, it is reversed due to diode if such reverse power connection one is power diode of after positive pole inputs, connecting
Cutoff function, circuit do not turn on, and second method is in power supply and a load end power MOS pipe in parallel, and such way can
To realize in reverse power connection, back-end circuit is not turned on.Although the defect of both schemes is all to protect when reverse power connection
Backend load circuit is protected, but backend load circuit will not work normally simultaneously, can just work after needing power supply just to connect again
Normally, so that scheme is inflexible.
Moreover, staff is not recognizing it is because power interface is anti-if backend load circuit irregular working
It is talked about caused by the reason of connecing, the connection of other components and component itself in enquiry circuit is often gone to whether there is event
Barrier reduces working efficiency in this way, delay many times in unnecessary work.
So, how to be just able to achieve and be reversely connected even if power interface, it is also possible that backend load circuit works normally, become
Technical problems to be solved in this application.
Summary of the invention
For this purpose, the embodiment of the present invention provides a kind of circuit for realizing the compatible positive-negative connected of dc power interface, it is existing to solve
If the problem of power interface is reversely connected, and backend load circuit just can not work normally in technology.
To achieve the goals above, the embodiment of the present invention provides the following technical solutions:
The embodiment of the invention provides a kind of circuits for realizing the compatible positive-negative connected of dc power interface, which includes: electricity
Source interface input terminal, the first field effect transistor, the second field effect transistor, third field effect transistor, the 4th field-effect are brilliant
Body pipe and power interface output end；
The first port of power interface input terminal respectively with the source electrode of the first field effect transistor and third field effect transistor
The source electrode of pipe is electrically connected, and, the grid with the grid of the second field effect transistor and the 4th field effect transistor is electrically connected respectively
It connects；The second port of power interface input terminal grid with the grid of the first field effect transistor and third field effect transistor respectively
Pole electrical connection, and be electrically connected respectively with the source electrode of the source electrode of the second field effect transistor and the 4th field effect transistor；Power supply
The second port of interface output end is followed by with the drain electrode of the first field effect transistor and the second field effect transistor electrical connection respectively
Ground；Drain electrode of the first port of power interface output end respectively with third field effect transistor and the 4th field effect transistor is electrically connected
It connects.
The embodiment of the present invention is further characterized in that, the circuit further include: two-way Transient Suppression Diode array；
Two-way Transient Suppression Diode array is in parallel with power interface input terminal.
The embodiment of the present invention is further characterized in that, the circuit further include: four first resistors；
First first resistor is electrically connected the second port and the first field effect transistor of power interface input terminal
Grid；Second first resistor is electrically connected the first port of power interface input terminal and the grid of the second field effect transistor
Pole；Third first resistor is electrically connected the second port of power interface input terminal and the grid of third field effect transistor；
4th first resistor is electrically connected the first port of power interface input terminal and the grid of the 4th field effect transistor.
The embodiment of the present invention is further characterized in that, the circuit further include: four second resistances and four 3rd resistors；
When h value is equal to one or three, the second port of h-th of second resistance one end electric connection of power supply interface input terminal；
The other end of h-th of second resistance is electrically connected one end of h-th of 3rd resistor and the grid of h field effect transistor；
The other end ground connection of h-th of 3rd resistor；
When h value is equal to two or four, the first port of h-th of second resistance one end electric connection of power supply interface input terminal；
The other end of h-th of second resistance is separately connected one end of h-th of 3rd resistor and the grid of h field effect transistor；The
The other end ground connection of h 3rd resistor.
The embodiment of the present invention is further characterized in that, the circuit further include:
Four first resistors, four second resistances and four 3rd resistors；
When j is equal to one or three, the second port of one end electric connection of power supply interface input terminal of j-th of second resistance, jth
The other end of a second resistance is electrically connected one end of j-th of 3rd resistor and one end of j-th of first resistor；J-th of third
Resistance other end ground connection；The grid of the other end electrical connection jth field effect transistor of j-th of first resistor；
When the value of j is two or four, the first end of one end electric connection of power supply interface input terminal of j-th of second resistance
Mouthful；The other end of j-th of second resistance is separately connected one end of j-th of 3rd resistor and one end of j-th of first resistor；
The other end ground connection of j-th of 3rd resistor；The grid of the other end electrical connection jth field effect transistor of j-th of first resistor.
The embodiment of the present invention is further characterized in that, the resistance value of first resistor is 100 ohm, second resistance and 3rd resistor
Resistance value is 100k ohm.
The embodiment of the present invention is further characterized in that first resistor is for limiting grid input current.
The embodiment of the present invention is further characterized in that second resistance and 3rd resistor are divider resistance.
No matter the embodiment of the present invention has the advantages which port of power input is accessed for anode, another
For cathode access when, all can there are two field effect transistor be connected.First field effect transistor and the 4th field effect transistor are led
Logical or the second field effect transistor and the conducting of third field effect transistor.That is, even if DC power supply port occurs instead
The case where connecing can also realize that the conducting of realization backend load circuit is realized straight while protecting backend load circuit chip
The flexible grafting of galvanic electricity source interface.In addition, even if user does not recognize dc power interface, reversal connection is happened, and will not be occurred
The case where circuit is not turned on.So user will not necessarily waste the plenty of time again and inquire other circuit components and its connection relationship
Whether the situation of mistake etc. occurs, and greatly promotes working efficiency.
Detailed description of the invention
It, below will be to embodiment party in order to illustrate more clearly of embodiments of the present invention or technical solution in the prior art
Formula or attached drawing needed to be used in the description of the prior art are briefly described.It should be evident that the accompanying drawings in the following description is only
It is merely exemplary, it for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer, which is extended, obtains other implementation attached drawings.
Structure depicted in this specification, ratio, size etc., only to cooperate the revealed content of specification, for
Those skilled in the art understands and reads, and is not intended to limit the invention enforceable qualifications, therefore does not have technical
Essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size are not influencing the function of the invention that can be generated
Under effect and the purpose that can reach, should all still it fall in the range of disclosed technology contents obtain and can cover.
Fig. 1 is a kind of circuit structure signal for realizing the compatible positive-negative connected of dc power interface provided in an embodiment of the present invention
Figure；
Fig. 2 is another circuit structure signal for realizing the compatible positive-negative connected of dc power interface provided in an embodiment of the present invention
Figure；
Fig. 3 is that a kind of external dc electricity source interface and backend load provided by the invention pass through the compatible positive-negative connected of power interface
Circuit realize electrical connection structural block diagram.
Specific embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed by book is understood other advantages and efficacy of the present invention easily, it is clear that described embodiment is the present invention one
Section Example, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall within the protection scope of the present invention.
The embodiment of the present invention 1 provides a kind of circuit for realizing the compatible positive-negative connected of dc power interface, specifically such as Fig. 1 institute
Show, which includes: power interface input terminal J1, the first field effect transistor Q1, the second field effect transistor Q2, third field effect
Answer transistor Q3, the 4th field effect transistor Q4 and power interface output end J2.
The first port of power interface input terminal J1 respectively with the source electrode of the first field effect transistor Q1 and third field-effect
The source electrode of transistor Q3 is electrically connected, and, respectively with the grid and the 4th field effect transistor Q4 of the second field effect transistor Q2
Grid electrical connection；The second port of power interface input terminal J1 respectively with the grid of the first field effect transistor Q1 and third field
The grid of effect transistor Q3 is electrically connected, and, respectively with the source electrode and the 4th field effect transistor of the second field effect transistor Q2
The source electrode of pipe Q4 is electrically connected；
The second port of power interface output end J2 respectively with the first field effect transistor Q1 and the second field effect transistor
It is grounded after the drain electrode electrical connection of Q2；The first port of power interface output end J2 respectively with third field effect transistor Q3 and the 4th
The drain electrode of field effect transistor Q4 is electrically connected.
Wherein, the first field effect transistor Q1 and the second field effect transistor Q2 is first kind field effect transistor, the
Three field effect transistor Q3 and the 4th field effect transistor Q4 are Second Type field effect transistor.In the present embodiment, first
Field effect transistor Q1 and the second field effect transistor Q2 is NMOS tube, and third field effect transistor Q3 and the 4th field-effect are brilliant
Body pipe Q4 is PMOS tube.
Assuming that the first port (1 foot) on the left of power interface input terminal J1 is anode access, then the second end on right side
Mouth (2 foot) then accesses for cathode.Will necessarily then there be forward voltage drop.When selecting field effect transistor, need that pressure drop is selected to pass through
Voltage after divider resistance meets the field effect transistor conduction voltage drop value of GS or SG.Select to close according to above-mentioned selection criteria
The PMOS tube model and NMOS tube model of reason.When generating forward voltage drop between 1 foot and 2 feet of power interface input terminal J1, meeting
So that the second field effect transistor Q2 and third field effect transistor Q3 drain electrode and source conduction.At this point, the first field effect transistor
Pipe Q1 and the 4th field effect transistor Q4 are not turned on.So that backend load anode interface, that is to say power interface output end J2's
First port (1 foot) is connected to the first port (1 foot) on the left of power interface input terminal J1；Backend load cathode interface, namely
It is that the second port (2 foot) of power interface output end J2 is connected to 2 feet on the right side of power interface input terminal J1, thus negative to rear end
Carry normal power supply.And maximum limitation electric current of powering then depends on the second field effect transistor Q2's and third field effect transistor Q3
Drain electrode conducting maximum current.Since the GS electrode resistance of field effect transistor is general approximate infinitely great, so increased 4 MOS
Pipe is asked for influence to the electric current of entire circuit load and be can be ignored.
Similar, it is assumed that 1 foot on the left of power interface input terminal J1 is cathode access, then 2 feet on right side are then positive
Pole access.There are forward voltage drops between 2 feet and 1 foot, are closed by way of above-mentioned introduced selection field effect transistor model
Reason selection P field effect transistor and N field effect transistor.Forward voltage drop is generated between power interface input terminal J12 foot and 1 foot
When, the first field effect transistor Q1 and the 4th field effect transistor Q4 drain electrode and source conduction can be made, and the second field-effect is brilliant
Body pipe Q2 and third field effect transistor Q3 are not turned on.To which backend load anode interface that is to say power interface output end J2
1 foot be connected to 2 feet on the right side of power interface input terminal J1, backend load cathode interface that is to say power interface output end J2
2 feet be connected to 1 foot on the left of power interface input terminal J1, thus give backend load normal power supply.And maximum limitation electricity of powering
Maximum current is connected depending on the drain electrode of the first field effect transistor Q1 and the 4th field effect transistor Q4 in stream.Similarly, due to field
The GS electrode resistance of effect transistor is general approximate infinitely great, so electric current rope of increased 4 metal-oxide-semiconductors to entire circuit load
Influence is taken to can be ignored.
Optionally, in a specific example, which can also include two-way Transient Suppression Diode array U1.Tool
For body as shown in Fig. 2, two-way Transient Suppression Diode array U1 is made of two groups 4 diodes, each group includes one common two
Pole pipe and a Transient Suppression Diode, two groups of diodes in parallel.It can prevent electrostatic breakdown and overvoltage surge to circuit
Damage.As long as and the selection of U1 meet junction capacity very little, tolerance power rationally, breakdown voltage be greater than the certain journey of applied power source voltage
Degree.
A kind of circuit for realizing the compatible positive-negative connected of dc power interface provided in an embodiment of the present invention, no matter power input
Which port be anode access, another for cathode access when, all can there are two field effect transistor be connected.First effect
Answer transistor and the conducting of the 4th field effect transistor or the second field effect transistor and the conducting of third field effect transistor.?
That is even if the case where DC power supply port is reversely connected, can also realize protect backend load circuit chip while,
It realizes the conducting of backend load circuit, realizes the flexible grafting of dc power interface.In addition, even if user does not recognize direct current
Source interface reversal connection happens, and the case where circuit is not turned on will not occurs.So user will not necessarily waste the plenty of time again
Inquiring other circuit components and its connection relationship, whether the situation of mistake etc. occurs, and greatly promotes working efficiency.
Optionally, in a specific example, on the basis of one embodiment, which can also include: four
A first resistor R9~R12.
First first resistor R9 is electrically connected the second port and the first field effect transistor of power interface input terminal J1
The grid of pipe Q1；Second first resistor R10 is electrically connected the first port and the second field-effect of power interface input terminal J1
The grid of transistor Q2；Third first resistor R11 is electrically connected second port and the third field of power interface input terminal J1
The grid of effect transistor Q3；4th first resistor R12 is electrically connected the first port and of power interface input terminal J1
The grid of four field effect transistor Q4.
Here first resistor, role are exactly the grid for preventing electric leakage breakdown field effect transistor, are had at one
In the example of body, resistance value can be 100 ohm.Certainly, the resistance value of first resistor is not necessarily 100 ohm, as long as can be real
Any resistance value of resistance of existing this embodiment scheme is ok, and excessive restriction is not done in the application.
Optionally, in another specific example, on the basis of one embodiment, which can also include:
Four second resistance R1 (first), R3 (second), R5 (third) and R7 (the 4th) and four 3rd resistor R2 (first
It is a), R4 (second), R6 (third) and R8 (the 4th)；
Wherein, when h value is equal to one or three, the second of h-th of second resistance one end electric connection of power supply interface input terminal
Port；The other end of h-th of second resistance is electrically connected the one end and h field effect transistor of h-th 3rd resistor
Grid；The other end ground connection of h-th of 3rd resistor；
When h value is equal to two or four, the first port of h-th of second resistance one end electric connection of power supply interface input terminal；
The other end of h-th of second resistance is separately connected one end of h-th of 3rd resistor and the grid of h field effect transistor；The
The other end ground connection of h 3rd resistor.
Here second resistance and 3rd resistor collectively forms divider resistance, and resistance value is 100k ohm.Wherein, first
The second port of the one end a second resistance R1 electric connection of power supply interface input terminal J1, the other end are separately connected first 3rd resistor
The grid of one end of R2 and the first field effect transistor Q1.
The main effect of divider resistance be at power import equivalence partial pressure enter metal-oxide-semiconductor grid, work here
With being that the expansion of power import voltage use scope can be made to be twice in the case that metal-oxide-semiconductor gate-on voltage is certain, circuit is answered
Become more wide with range.In addition, four 3rd resistors R2, R4, R6 and R8, also play ground resistance as metal-oxide-semiconductor grid
The effect of junction capacity of releasing stored charge.
Since the pole G of general power MOS pipe and the pressure voltage of the pole S are up to 30V or so, so the circuit can be applied to
In direct current 60V plate grade power supply system below.Certainly, as long as meeting the half of external dc power voltage in practical application
Less than metal-oxide-semiconductor the pole G and the pole S maximum pressure resistance and there are certain surpluses.
In addition, the circuit can also include each component in above-mentioned all examples, component in another specific example
Between connection relationship then slightly change.To constitute a new example, specifically as shown in Fig. 2, the circuit includes: that power supply connects
Mouth input terminal J1, the first field effect transistor Q1, the second field effect transistor Q2, third field effect transistor Q3, the 4th effect
Answer transistor Q4, power interface output end J2, two-way Transient Suppression Diode array U1, four first resistor R9~R12, four
Second resistance R1, R3, R5 and R7 and four 3rd resistors R2, R4, R6 and R8.
Wherein, same as above not the doing then of partial circuit connection relationship excessively repeats, such as power interface input terminal J1
Connection relationship between two-way Transient Suppression Diode array U1 is described above with identical, repeats no more.And different portion
Divide to be described from below, specifically include:
When j is equal to one or three, the second port of one end electric connection of power supply interface input terminal of j-th of second resistance, jth
The other end of a second resistance is electrically connected one end of j-th of 3rd resistor and one end of j-th of first resistor；J-th of third
Resistance other end ground connection；The grid of the other end electrical connection jth field effect transistor of j-th of first resistor；
When the value of j is two or four, the first end of one end electric connection of power supply interface input terminal of j-th of second resistance
Mouthful；The other end of j-th of second resistance is separately connected one end of j-th of 3rd resistor and one end of j-th of first resistor；
The other end ground connection of j-th of 3rd resistor；The grid of the other end electrical connection jth field effect transistor of j-th of first resistor.Tool
Body as shown in Fig. 2, no longer excessively repeat here.Wherein, the resistance value of second resistance and 3rd resistor can be 100K ohm.With
One resistance is similar, is only to be said in the present embodiment by taking the resistance value of second resistance and 3rd resistor is 100K ohm as an example
It is bright, it is not necessary to be 100K ohm, any resistance value that the program may be implemented can be applied to the application, not do here excessive
It limits.
In a specific embodiment, illustrate by taking two small-power metal-oxide-semiconductor of NEC Corporation as an example, model is respectively
2SK612 (NMOS) and 2SJ128 (PMOS).Since the drain electrode maximum current of 2SK612 is up to 2A, the pressure resistance of grid source is maximum reachable
The drain electrode maximum current of 20V, 2SJ128 are up to 2A, and the pressure resistance of grid source is maximum up to 20V, so this two metal-oxide-semiconductor can be applied to
In foregoing circuit, it is suitable for the following voltage value of external power interface 40V, current drain is less than in the circuit of 2A, occupies volume
External circuit area is small, at low cost, small power consumption.
In addition, being shown in Fig. 3 real using the circuit of the application Fig. 1 or the compatible positive-negative connected of power interface shown in Fig. 2
The structural schematic diagram of electrical connection is established between present external dc electricity source interface and backend load.No matter external dc electricity source interface
It is just connecing or is being reversely connected, its rear end load can realize normal work.
A kind of circuit for realizing the compatible positive-negative connected of dc power interface provided in an embodiment of the present invention, no matter power input
Which port be anode access, when another is accessed for cathode, can be all connected there are two field effect transistor.First
Field effect transistor and the conducting of the 4th field effect transistor or the second field effect transistor and third field effect transistor are led
It is logical.That is, even if the case where DC power supply port is reversely connected, can also realize in protection backend load circuit chip
While, it realizes the conducting of backend load circuit, realizes the flexible grafting of dc power interface.In addition, even if user does not realize
It is happened to dc power interface reversal connection, the case where circuit is not turned on will not occur.So user will not necessarily waste again
Plenty of time inquires other circuit components and its connection relationship, and whether the situation of mistake etc. occurs, and greatly promotes working efficiency.
In addition, the two-way Transient Suppression Diode array in circuit is for preventing bad shadow caused by circuit electrostatic breakdown and overvoltage surge
It rings.Gate series resistance of the first resistor as field effect transistor prevents electric leakage breakdown field for limiting grid input current
The grid of effect transistor.Second resistance and 3rd resistor constitute divider resistance, for the equivalence partial pressure entrance at power import
The grid of field effect transistor, effect here can be made in the case that field effect transistor gate conducting voltage is certain
The expansion of power import voltage use scope is twice, and circuit application range becomes more wide.
Although above having used general explanation and specific embodiment, the present invention is described in detail, at this
On the basis of invention, it can be made some modifications or improvements, this will be apparent to those skilled in the art.Therefore,
These modifications or improvements without departing from theon the basis of the spirit of the present invention are fallen within the scope of the claimed invention.
Claims (8)
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| CN201811603882.5A CN109449916A (en) | 2018-12-26 | 2018-12-26 | A kind of circuit for realizing the compatible positive-negative connected of dc power interface |
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| CN201811603882.5A CN109449916A (en) | 2018-12-26 | 2018-12-26 | A kind of circuit for realizing the compatible positive-negative connected of dc power interface |
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| CN1967962A (en) * | 2006-07-24 | 2007-05-23 | 郑林全 | Self adapting circuit of polarity of charging and discharging |
| CN101478153A (en) * | 2009-02-05 | 2009-07-08 | 费江海 | Pilot type control circuit |
| CN102957408A (en) * | 2012-11-21 | 2013-03-06 | 合肥创源车辆控制技术有限公司 | Non-polarity electronic switch |
| CN106231732A (en) * | 2016-08-31 | 2016-12-14 | 徐州爱特普电子有限公司 | The LED illumination circuit of nonpolarity direct current input wide-voltage constant power |
| CN209072068U (en) * | 2018-12-26 | 2019-07-05 | 深圳中创艾宝技术有限公司 | A kind of circuit for realizing the compatible positive-negative connected of dc power interface |
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Application publication date: 20190308 |