CN109426101A - A kind of focusing leveling device and method - Google Patents
A kind of focusing leveling device and method Download PDFInfo
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- CN109426101A CN109426101A CN201710773192.3A CN201710773192A CN109426101A CN 109426101 A CN109426101 A CN 109426101A CN 201710773192 A CN201710773192 A CN 201710773192A CN 109426101 A CN109426101 A CN 109426101A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 149
- 238000005259 measurement Methods 0.000 claims abstract description 41
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000523 sample Substances 0.000 claims abstract description 9
- 238000003384 imaging method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000000571 coke Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
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- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a kind of focusing leveling device and method, which includes the measurement light emitting portion and measurement light receiving part for being divided into substrate two sides, and the measurement light emitting portion includes the light source set gradually along optical path, projection slit group and projecting subassembly；The measurement light receiving part includes the probe assembly set gradually along optical path, detection slot set and detector, and the projection slit group is equipped with multiple detection slits pair, and each detection slit is to the son detection slit not being overlapped including two positions.By the way that multiple detection slits pair are arranged in detection slot set, each detection slit pair is corresponding with a projection hot spot, and the son detection slit not being overlapped including two positions, two voltage values are obtained along the length of projecting direction through two son detection slits according to each projection hot spot, partner differential signal, from difference detecting method is spatially used, time difference, measurement error caused by avoiding due to scanning reflection mirror unstability and its modulating characteristic is not present.
Description
Technical field
The present invention relates to technical field of lithography, and in particular to a kind of focusing leveling device and method.
Background technique
Projection mask aligner is the device that a kind of pattern on mask is projected to by object lens on silicon wafer face.In projection exposure
In equipment, it is necessary to there is automatic focusing leveling system silicon wafer face to be accurately brought into specified exposure position.It provides in the prior art
Focusing-levelling detection device, system principle is as shown in Figure 1.Wherein, the light that lighting unit 101 is emitted, through projection slit 102
104 surface of silicon wafer is reflexed to by the first plane mirror 103 afterwards, forms projection hot spot；Light is reflexed to second by 104 surface of silicon wafer
Plane mirror 105；The light being emitted from second plane mirror 105 is incident on scanning reflection mirror 106；Scanning reflection mirror 106
Make periodical simple harmonic oscillation, optical signal is modulated, to improve the signal-to-noise ratio of measuring signal；The outgoing of scanning reflection mirror 106
Light is incident on photodetector 108, photodetector 108 is defeated further according to received light intensity magnitude through detecting slit 107
Corresponding voltage signal out.Due to the modulating action of scanning reflection mirror 106,108 final output of photodetector is periodically dynamic
State voltage signal.Finally, the dynamic voltage signal is analyzed and processed by combining scanning reflection mirror 106 to feed back square wave, it is real
The detection of existing 104 surface defocusing amount of silicon wafer.
However it is above-mentioned using the focusing and leveling system modulated based on scanning reflection mirror, there are problems that following 2: first, sweeps
Reflecting mirror is retouched as a moving component, and is chronically at working condition, due to temperature, air pressure, the factors such as humidity, and it is long-term
Metal fatigue will will affect its stable operation caused by movement, and then lead to measurement error；Second, scanning reflection mirror is being focused
Main function in leveling system is to carry out differential modulation to signal on time dimension, this will lead to difference value collected and deposits
In the time difference, when scanning motion, which couples with silicon wafer face partial face type will will lead to measurement error.
Summary of the invention
The present invention provides a kind of focusing leveling device and methods, existing in the prior art due to scanning reflection to solve
Caused by the unstability and its modulating characteristic of mirror the problem of measurement error.
In order to solve the above-mentioned technical problem, the technical scheme is that a kind of focusing leveling device, including it is divided into work
On part platform the measurement light emitting portion of substrate two sides and measurement light receiving part, the measurement light emitting portion include along optical path according to
Light source, projection slit group and the projecting subassembly of secondary setting；The measurement light receiving part includes the detection set gradually along optical path
Component, detection slot set and detector, the projection slit group are equipped with multiple detection slits pair, each detection slit pair
Son detection slit corresponding with a projection hot spot, and not being overlapped including two positions.
Further, the measurement light emitting portion further includes the illumination group between the light source and projection slit group
Part.
Further, the measurement light receiving part further includes the relaying between the detection slot set and detector
Component.
Further, two sub- detection slits are equal in magnitude.
Further, two sub- detection slits projecting direction distance D, in the distance L of non-projecting direction, sub- spy
Slit is surveyed in the length D of projecting directiond, width L of the sub- detection slit in non-projecting directiondBetween meet following relationship: L > Ld, 0
<D<Dd。
Further, the projection hot spot length D of imaging in projecting direction in detection slot setp, in non-throwing
Shadow is to width LpMeet with the relationship of detection slit pair: Dp=Dd, Lp>L+Ld。
Further, two sub- detection slits projecting direction distance D, in the distance L of non-projecting direction, sub- spy
Slit is surveyed in the length D of projecting directiond, width L of the sub- detection slit in non-projecting directiondBetween meet following relationship: L > Ld, D
≥Dd。
Further, two sub- detection slits projecting direction distance D, in the distance L of non-projecting direction, sub- spy
Slit is surveyed in the length D of projecting directiond, width L of the sub- detection slit in non-projecting directiondBetween meet following relationship: L < Ld, D
>Dd。
Further, the projection hot spot length D of imaging in projecting direction in detection slot setp, in non-throwing
Shadow is to width LpMeet with the relationship of detection slit pair: Dp=D, Lp>L+Ld。
The present invention also provides a kind of focusing and leveling methods, comprising the following steps:
S1: the relationship of demodulation amount and defocusing amount is calibrated；
S2: opening light source, and measurement light successively passes through projection slit group and projecting subassembly, is formed in the substrate of work stage more
A projection hot spot, while substrate reflects hot spot, and is imaged in detection slot set by probe assembly, through detection slot set
In the light of each detection slit pair received by detector, light intensity magnitude exports corresponding voltage to detector based on the received
Value；
S3: the voltage value exported according to the detector finds out demodulation amount；
S4: by the relationship of the demodulation amount and defocusing amount that calibrate in step S1, defocusing amount is calculated.
Further, the step S1 the following steps are included:
S11: the substrate in work stage is moved to negative defocus extreme position or positive out of focus extreme position；
S12: stepping work stage synchronizes and writes down voltage value Ai, BiAnd the defocusing amount Z of substratei, and find out corresponding Si=
(Ai-Bi)/(Ai+Bi), i represents the i-th step；
S13: after work stage has stepped through, selecting demodulated amount SiWith defocusing amount ZiBetween linear segment, use fitting of a polynomial
The relationship of demodulation amount and defocusing amount is obtained, saves fitting coefficient, and determine actual measurement range.
Further, each projection hot spot and detection slit in slot set is detected to one-to-one correspondence in the step S2,
Each detection slot set includes the son detection slit that two positions are not overlapped.
Further, each projection hot spot corresponding two voltage values A, B in the step S2, meet: A=ρ * D1, B=ρ *
D2；Wherein D1、D2Respectively for the projection hot spot through two son detection slits along the length of projecting direction, ρ is corresponding optical power
Bulkfactor.
Focusing leveling device provided by the invention and method, the device include the survey for the substrate two sides being divided into work stage
Light emitting portion and measurement light receiving part are measured, the measurement light emitting portion includes the light source set gradually along optical path, projection
Slot set and projecting subassembly；The measurement light receiving part include the probe assembly set gradually along optical path, detection slot set and
Detector, the projection slit group are equipped with multiple detection slits pair, and each detection slit is not weighed to including two positions
The son detection slit of conjunction.By being arranged multiple detection slits pair in detection slot set, each detection slit pair and one
The son detection slit for projecting hot spot to correspond to, and not being overlapped including two positions is detected according to each projection hot spot through two sons
Slit obtains two voltage values along the length of projecting direction, and partner differential signal, from difference detecting method is spatially used, no
There are the time differences, so as to remove the modulation of scanning reflection mirror, and then avoid due to scanning reflection mirror unstability and its tune
Measurement error caused by characteristic processed.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of focusing-levelling detection device in the prior art；
Fig. 2 is the structural schematic diagram of focusing leveling device in the embodiment of the present invention 1；
Fig. 3 is one specific example of size that laser image spot and corresponding detection slit pair are projected in the embodiment of the present invention 1；
Fig. 4 is to be directed to when silicon wafer defocusing amount in Fig. 3 is zero to project positional relationship between laser image spot and corresponding detection slit pair
Figure；
Fig. 5 is to project positional relationship between laser image spot and corresponding detection slit pair in Fig. 3 when the silicon wafer positive out of focus limit
Figure；
When Fig. 6 is the defocus limit negative for silicon wafer in Fig. 3, positional relationship between laser image spot and corresponding detection slit pair is projected
Figure；
Fig. 7 is one specific example of size that laser image spot and corresponding detection slit pair are projected in the embodiment of the present invention 2；
Fig. 8 is to be directed to when silicon wafer defocusing amount in Fig. 7 is zero to project positional relationship between laser image spot and corresponding detection slit pair
Figure；
Fig. 9 is to project positional relationship between laser image spot and corresponding detection slit pair in Fig. 7 when the silicon wafer positive out of focus limit
Figure；
When Figure 10 is the defocus limit negative for silicon wafer in Fig. 7, projects position between laser image spot and corresponding detection slit pair and close
System's figure.
Shown in Fig. 1: 101, lighting unit；102, projection slit；103, the first plane mirror；104, silicon wafer；105,
Second plane mirror；106, scanning reflection mirror；107, slit is detected；108, photodetector；
Shown in Fig. 2-10: 1, substrate；100, light emitting portion is measured；200, light receiving part is measured；2, light source；3, it throws
Shadow slot set；4, projecting subassembly；5, probe assembly；6, slot set is detected；61a-61b, sub- detection slit；62, laser image spot is projected；
7, detector；8, light fixture；9, relay component.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing:
As shown in Fig. 2, the present invention provides a kind of focusing leveling device, including being divided into 1 two sides of substrate in work stage
Light emitting portion 100 and measurement light receiving part 200 are measured, the measurement light emitting portion 100 includes setting gradually along optical path
Light source 2, projection slit group 3 and projecting subassembly 4；The measurement light receiving part 200 includes the detection set gradually along optical path
Component 5, detection slot set 6 and detector 7, the detection slot set 6 are equipped with multiple detection slits pair, and each detection is narrow
Seam to corresponding with a projection hot spot, the detection slit to include two positions be not overlapped sub detect slit 61a, 61b.Light source
2 light issued successively pass through projection slit group 3 and projecting subassembly 4, form multiple projection hot spots, while substrate 1 on the base 1
Light is reflected, and is imaged in detection slot set 6 by probe assembly 5, through each detection slit pair in detection slot set 6
Light received by detector 7, light intensity magnitude acquires corresponding voltage value to detector 7 based on the received；By narrow in detection
Multiple detection slits pair are set in seam group 6, and each detection slit pair is corresponding with a projection hot spot, and including two positions
Son detection slit 61a, 61b not being overlapped, according to each projection laser image spot 62 through two son detection slit 61a, 61b along projection
The length in direction obtains two differential signals, from difference detecting method is spatially used, the time difference is not present, sweeps so as to remove
The modulation of reflecting mirror is retouched, and then measurement error caused by avoiding due to scanning reflection mirror unstability and its modulating characteristic.This
In embodiment, substrate 1 is silicon wafer.
Preferably, the measurement light emitting portion 100 further includes the photograph between the light source 2 and projection slit group 3
Bright component 8, the light that light source 2 issues form directional light by light fixture 8.
Preferably, the measurement light receiving part 200 further includes being set between the detection slot set 6 and detector 7
Relay component 9 is received after handling through the relayed component 9 of light in detection slot set 6 by detector 7.
Preferably, two described sub- detection slit 61a, 61b projecting direction distance D, in the distance of non-projecting direction
The length D of L, sub- detection slit 61a, 61b in projecting directiond, width L of sub- detection slit 61a, the 61b in non-projecting directiondIt
Between meet following relationship: L > Ld, D >=Dd, projection hot spot imaging (i.e. projection laser image spot 62) in detection slot set 6
In the length D of projecting directionp, project non-to width LpMeet with the relationship of detection slit pair: Dp=D, Lp>L+Ld。
Each hot spot corresponding two voltage values A, B, form a pair of of differential signal, meet: A=ρ * D1, B=ρ * D2；Wherein
D1、D2Respectively for the projection hot spot through two son detection slit 61a, 61b along the length of projecting direction, ρ is corresponding optical power
Bulkfactor.
As shown in figure 3, distance D=D of two described sub- detection slit 61a, 61b in projecting directiond, two sons detect narrow
61a, 61b are stitched in non-projecting direction distance L > Ld；Laser image spot 62 is projected in the length D of projecting directionp=Dd, in non-projecting direction
Width Lp>L+Ld。
As shown in figure 4, projection laser image spot 62 is closed relative to the position of detection slit pair when the defocusing amount for being silicon wafer face is zero
System, on non-projecting direction, projection 62 all standing of laser image spot detects slit pair, on projecting direction, through sub- detection slit 61a
Distance be D1=Dd/ 2, through the distance D of sub- detection slit 61b2=Dd/2.Its corresponding voltage value A=B=ρ * D exportedd/
2, ρ be corresponding optical power density coefficient, then demodulation amount S=(A-B)/(A+B)=0.
As shown in figure 5, projection laser image spot 62 is relative to detection slit pair when being located at positive out of focus extreme position for silicon wafer face
Positional relationship, on projecting direction, through the distance D of sub- detection slit 61a1=Dd, through the distance D of sub- detection slit 61b2
=0.Its corresponding voltage value A=ρ * D exportedd, B=0, then demodulation amount S=(A-B)/(A+B)=1.
As shown in fig. 6, projection laser image spot 62 is relative to detection slit pair when being located at negative defocus extreme position for silicon wafer face
Positional relationship, on projecting direction, through the distance D of sub- detection slit 61a1=0, through the distance D of sub- detection slit 61b2=
Dd.Its corresponding voltage value A=0, B=ρ * D exportedd, then demodulation amount S=(A-B)/(A+B)=- 1.
It theoretically calculates, using the principle of triangulation of traditional optical, when silicon wafer defocusing amount is Z, it will cause to throw
The translational movement of 62 relative detection slit of shadow laser image spot is d, d=(A-B)/(ρ * Ld)/2=(A-B) * Dd/ (A+B)/2, and Δ Z=
K* Δ d, K are conversion coefficient, are determined by optic-mechanical design, are constant.It is found that Z=K* (A-B) * Dd/ (A+B)/2=K*S*Dd, solution
Tune amount S=(A-B)/(A+B), therefore defocusing amount Z can be calculated according to voltage value A, B, however in practical applications, due to by ring
Border factor influences, and there are more complicated relationships between demodulation amount S and defocusing amount Z, therefore carries out firstly the need of the relationship to the two
Calibration.
The present embodiment additionally provides a kind of focusing and leveling method, comprising the following steps:
S1: the relationship of demodulation amount and defocusing amount is calibrated, comprising the following steps:
S11: the substrate in work stage is moved to negative defocus extreme position or positive out of focus extreme position；
S12: stepping work stage synchronizes and writes down voltage value Ai, BiAnd the defocusing amount Z of substratei, and find out corresponding demodulation
Measure Si=(Ai-Bi)/(Ai+Bi), i represents the i-th step；
S13: after work stage has stepped through, selecting demodulated amount SiWith defocusing amount ZiBetween linear segment, use fitting of a polynomial
The relationship of demodulation amount S Yu defocusing amount Z are obtained, saves fitting coefficient, and determine actual measurement range.
S2: opening light source 2, and measurement light successively passes through projection slit group 3 and projecting subassembly 4, the shape in the substrate 1 of work stage
At multiple projection hot spots, while substrate 1 reflects hot spot, and is imaged in detection slot set 6 by probe assembly 5, through spy
The light for surveying each detection slit pair in slot set 6 is received by detector 7, and light intensity magnitude exports detector 7 based on the received
Corresponding voltage value；Detection slit on each projection hot spot and detection slot set 6 is to one-to-one correspondence, each detection slot set 6
Including son detection slit 61a, 61b that two positions are not overlapped, each projection hot spot corresponding two voltage values A, B meet: A=
ρ*D1, B=ρ * D2；Wherein D1、D2Respectively the projection hot spot is through two son detection slit 61a, 61b along the length of projecting direction
Degree, ρ are corresponding optical power density coefficient.
S3: voltage value A, the B exported according to the detector 7 finds out demodulation amount S=(A-B)/(A+B)；
S4: by the relationship of the demodulation amount S and defocusing amount Z that calibrate in step S1, defocusing amount Z is calculated.Due to throwing
Shadow hot spot has multiple, and in order to improve focusing and leveling precision, final defocusing amount need to integrate the calculated results of multiple projection hot spots.
Embodiment 2
Unlike the first embodiment, in the present embodiment, two described sub- detection slit 61a, 61b projecting direction away from
From D, in the length D of distance L, sub- detection slit 61a, 61b in projecting direction of non-projecting directiond, sub- detection slit 61a, 61b
In the width L of non-projecting directiondBetween meet following relationship: L < Ld, D > Dd.The projection hot spot detection slot set 6 on institute at
Picture projecting direction length Dp, project non-to width LpMeet with the relationship of detection slit pair: Dp=D, Lp>L+Ld。
As shown in fig. 7, distance D > D of two described sub- detection slit 61a, 61b in projecting directiond, two sons detect narrow
61a, 61b are stitched in non-projecting direction distance L=0；Laser image spot 62 is projected in the length D of projecting directionp=D, in non-projecting direction
Width Lp>Ld。
When the defocusing amount for being illustrated in figure 8 silicon wafer face is zero, projection laser image spot 62 is closed relative to the position of detection slit pair
System, on non-projecting direction, projection 62 all standing of laser image spot detects slit pair, on projecting direction, through sub- detection slit 61a
Distance be D1=Dd/ 2, through the distance D of sub- detection slit 61b2=Dd/2.Its corresponding voltage value A=B=ρ * D exportedd/
2, ρ be corresponding optical power density coefficient, then demodulation amount S=(A-B)/(A+B)=0.
When being illustrated in figure 9 silicon wafer face and being located at positive out of focus extreme position, projection laser image spot 62 is relative to detection slit pair
Positional relationship, on projecting direction, through the distance D of sub- detection slit 61a1=Dd, through the distance D of sub- detection slit 61b2
=0.Its corresponding voltage value A=ρ * D exportedd, B=0, then S=(A-B)/(A+B)=1.
When being located at negative defocus extreme position as shown in Figure 10 for silicon wafer face, projection laser image spot 62 is relative to detection slit pair
Positional relationship, on projecting direction, through the distance D of sub- detection slit 61a1=0, through the distance D of sub- detection slit 61b2=
Dd.Its corresponding voltage value A=0, B=ρ * D exportedd, then S=(A-B)/(A+B)=- 1.
Each hot spot corresponding two voltage values A, B, form a pair of of differential signal, meet: A=ρ * D1, B=ρ * D2；Wherein
D1、D2Respectively for the projection hot spot through two son detection slit 61a, 61b along the length of projecting direction, ρ is corresponding optical power
Bulkfactor.Theoretically it is found that Z=K* (A-B) * Dd/ (A+B)/2=K*S*Dd, demodulation amount S=(A-B)/(A+B), therefore
Defocusing amount Z can be calculated according to voltage value A, B, however in practical applications, due to by such environmental effects, demodulation amount S with from
There are more complicated relationships between coke amount Z, therefore demarcate firstly the need of the relationship to the two.Demodulation is demarcated in the present embodiment
It measures same as Example 1 with the method for the relationship of defocusing amount.
Embodiment 3
Unlike the first embodiment, in the present embodiment, two described sub- detection slit 61a, 61b projecting direction away from
From D, in the length D of distance L, sub- detection slit 61a, 61b in projecting direction of non-projecting directiond, sub- detection slit 61a, 61b
In the width L of non-projecting directiondBetween meet following relationship: L > Ld, 0 < D < Dd, it is formed in detection slot set 6 to project hot spot
As the length D in projecting directionp, project non-to width LpMeet with 61 relationships of detection slit pair: Dp=Dd, Lp>L+Ld。
Each hot spot corresponding two voltage values A, B, form a pair of of differential signal, meet: A=ρ * D1, B=ρ * D2；Wherein
D1、D2Respectively for the projection hot spot through two son detection slit 61a, 61b along the length of projecting direction, ρ is corresponding optical power
Bulkfactor.Theoretically it is found that Z=K* (A-B) * Dd/ (A+B)/2=K*S*Dd, demodulation amount S=(A-B)/(A+B), therefore
Defocusing amount Z can be calculated according to voltage value A, B, however in practical applications, due to by such environmental effects, demodulation amount S with from
There are more complicated relationships between coke amount Z, therefore demarcate firstly the need of the relationship to the two.Demodulation is demarcated in the present embodiment
It measures same as Example 1 with the method for the relationship of defocusing amount.
In conclusion focusing leveling device provided by the invention and method, which includes the base being divided into work stage
The measurement light emitting portion 100 and measurement light receiving part 200 of 1 two sides of bottom, the measurement light emitting portion 100 includes along optical path
Light source 2, projection slit group 3 and the projecting subassembly 4 set gradually；The measurement light receiving part 200 includes successively setting along optical path
Probe assembly 5, detection slot set 6 and the detector 7 set, the detection slot set 6 are equipped with multiple detection slits pair, Mei Gesuo
Detection slit is stated to son detection slit 61a, the 61b not being overlapped including two positions.It is multiple by being arranged in projection slit group 6
Slit pair is detected, each detection slit pair is corresponding with a projection hot spot, and the son detection not being overlapped including two positions
Slit 61a, 61b obtain two along the length of projecting direction through two son detections slit 61a, 61b according to each projection hot spot
Voltage value, partner differential signal, and from difference detecting method is spatially used, the time difference is not present, so as to remove scanning
The modulation of reflecting mirror, and then measurement error caused by avoiding due to scanning reflection mirror unstability and its modulating characteristic.
Although embodiments of the present invention are illustrated in specification, these embodiments are intended only as prompting,
It should not limit protection scope of the present invention.It is equal that various omission, substitution, and alteration are carried out without departing from the spirit and scope of the present invention
It should be included within the scope of the present invention.
Claims (13)
1. a kind of focusing leveling device, measurement light emitting portion and measurement light-receiving including being divided into substrate two sides in work stage
Part, which is characterized in that the measurement light emitting portion includes the light source set gradually along optical path, projection slit group and projection group
Part；The measurement light receiving part includes the probe assembly set gradually along optical path, detection slot set and detector, the projection
Slot set is equipped with multiple detection slits pair, and each detection slit pair is corresponding with a projection hot spot, and including two positions
Set the son detection slit not being overlapped.
2. focusing leveling device according to claim 1, which is characterized in that the measurement light emitting portion further includes being located at
Light fixture between the light source and projection slit group.
3. focusing leveling device according to claim 1, which is characterized in that the measurement light receiving part further includes being set to
Relay component between the detection slot set and detector.
4. focusing leveling device according to claim 1, which is characterized in that two sub- detection slits are equal in magnitude.
5. focusing leveling device according to claim 4, which is characterized in that two sub- detection slits are in projecting direction
Distance D, in the distance L of non-projecting direction, length D of the sub- detection slit in projecting directiond, sub- detection slit is in non-projection side
To width LdBetween meet following relationship: L > Ld, 0 < D < Dd。
6. focusing leveling device according to claim 5, which is characterized in that projection hot spot institute in detection slot set
At picture projecting direction length Dp, project non-to width LpMeet with the relationship of detection slit pair: Dp=Dd, Lp>L+Ld。
7. focusing leveling device according to claim 4, which is characterized in that two sub- detection slits are in projecting direction
Distance D, in the distance L of non-projecting direction, length D of the sub- detection slit in projecting directiond, sub- detection slit is in non-projection side
To width LdBetween meet following relationship: L > Ld, D >=Dd。
8. focusing leveling device according to claim 4, which is characterized in that two sub- detection slits are in projecting direction
Distance D, in the distance L of non-projecting direction, length D of the sub- detection slit in projecting directiond, sub- detection slit is in non-projection side
To width LdBetween meet following relationship: L < Ld, D > Dd。
9. focusing leveling device according to claim 7 or 8, which is characterized in that the projection hot spot is in detection slot set
Length D of the upper imaging in projecting directionp, project non-to width LpMeet with the relationship of detection slit pair: Dp=D, Lp>L
+Ld。
10. a kind of focusing and leveling method, which comprises the following steps:
S1: the relationship of demodulation amount and defocusing amount is calibrated；
S2: opening light source, and measurement light successively passes through projection slit group and projecting subassembly, forms multiple throwings in the substrate of work stage
Shadow hot spot, while substrate reflects hot spot, and is imaged in detection slot set by probe assembly, through every in detection slot set
The light of a detection slit pair is received by detector, and light intensity magnitude exports corresponding voltage value to detector based on the received；
S3: the voltage value exported according to the detector finds out demodulation amount；
S4: by the relationship of the demodulation amount and defocusing amount that calibrate in step S1, defocusing amount is calculated.
11. focusing and leveling method according to claim 10, which is characterized in that the step S1 the following steps are included:
S11: the substrate in work stage is moved to negative defocus extreme position or positive out of focus extreme position；
S12: stepping work stage synchronizes and writes down voltage value Ai, BiAnd the defocusing amount Z of substratei, and find out corresponding demodulation amount Si
=(Ai-Bi)/(Ai+Bi), i represents the i-th step；
S13: after work stage has stepped through, selecting demodulated amount SiWith defocusing amount ZiBetween linear segment, obtained using fitting of a polynomial
The relationship of demodulation amount and defocusing amount saves fitting coefficient, and determines actual measurement range.
12. focusing and leveling method according to claim 10, which is characterized in that in the step S2 each projection hot spot with
The detection slit in slot set is detected to one-to-one correspondence, each detection slot set includes that the son detection that is not overlapped of two positions is narrow
Seam.
13. focusing and leveling method according to claim 12, which is characterized in that each projection hot spot pair in the step S2
Two voltage values A, B are answered, are met: A=ρ * D1, B=ρ * D2；Wherein D1、D2Respectively the projection hot spot is narrow through two son detections
The length along projecting direction is stitched, ρ is corresponding optical power density coefficient.
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