CN109411637A - A kind of processing method of top emitting Organic Light Emitting Diode metal anode - Google Patents
A kind of processing method of top emitting Organic Light Emitting Diode metal anode Download PDFInfo
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- CN109411637A CN109411637A CN201811452655.7A CN201811452655A CN109411637A CN 109411637 A CN109411637 A CN 109411637A CN 201811452655 A CN201811452655 A CN 201811452655A CN 109411637 A CN109411637 A CN 109411637A
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- organic light
- light emitting
- emitting diode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention discloses a kind of processing methods of top emitting Organic Light Emitting Diode metal anode, include the following steps: S1, are passed through H2With Ar, N2Or the mixed gas of one of He, wherein H2Concentration be 5%-10%；S2 is passed through O2, by controlling its flow and reaction time, one layer is formed uniformly and the thin layer of metal oxide of 3-5nm thickness in metal surface, the thin layer of metal oxide is as hole injection layer.The present invention can not only improve the uniformity of luminance of top emitting oled panel, but also can promote the photoelectric properties of OLED device to a certain extent.
Description
Technical field
The present invention relates to a kind of processing methods of top emitting Organic Light Emitting Diode metal anode.
Background technique
Al, Ag, Cu metal are commonly used in top emitting Organic Light Emitting Diode as reflection anode, the preparation process of these metals
Have the modes such as magnetron sputtering, electron beam evaporation, finally again through gluing, photoetching, development and etc. formed pattern, for preparation top hair
Penetrate OLED device use.But in patterned technical process, Al, Ag, Cu metal can carry out aoxidizing to varying degrees,
The different oxide layer of thickness is formed in metal surface, this can produce serious influence to preparation top emission OLED device, such as
Uniformity of luminance variation etc..Meanwhile prepare the surface of metal electrode after completing may the pollution such as residual organic matter, dust
Object needs to clean out before preparing top emission OLED device.
Commonly used in the prior art is to utilize O2Or Ar and O2Gaseous mixture anode is handled, reach cleaning electrode
The purpose of surface contaminant, cleaning effect is undesirable, and does not have to the promotion of Organic Light Emitting Diode (OLED) device performance
It helps.
Summary of the invention
In order to solve the above technical problems, the object of the present invention is to provide a kind of top emitting Organic Light Emitting Diode metal anodes
Processing method.
In order to solve the above technical problems, the present invention adopts the following technical scheme:
A kind of processing method of top emitting Organic Light Emitting Diode metal anode, includes the following steps:
S1 is passed through H2With Ar, N2Or the mixed gas of one of He, wherein H2Concentration be 5%-10%；
Principle is as follows: hitting metallic surface contamination using Ar ion, or the hydrocarbon chemical bond in pollutant is cracked, shape
At gas, taken out of by vacuum system；Reduction reaction occurs using hydrogen ion and the oxidation film of metal surface, so that it is clean to obtain surface
Net and non-oxidation layer metal anode.
S2 is passed through O2, by controlling its flow and reaction time, one layer is formed uniformly in metal surface and 3-5nm is thick
The thin layer of metal oxide of degree, the thin layer of metal oxide can effectively improve anode work function number, greatly as hole injection layer
It is big to reduce hole injection barrier, carrier injectability is improved, the luminescent properties of OLED device are improved.
Preferably, in step S1, it is passed through H2With the mixed gas of Ar.
Preferably, H2Concentration be 5%.
Preferably, H2Concentration be 7.5% or 8%, especially 9.091%.
Preferably, H2Concentration be 10%.
Preferably, the thin layer of metal oxide with a thickness of 4nm.
Preferably, the thin layer of metal oxide with a thickness of 3nm.
Preferably, the thin layer of metal oxide with a thickness of 5nm.
Compared with prior art, advantageous effects of the invention:
The present invention can not only improve the uniformity of luminance of top emitting oled panel, but also can promote OLED to a certain extent
The photoelectric properties of device.
Detailed description of the invention
The invention will be further described for explanation with reference to the accompanying drawing.
Fig. 1 is plasma structure schematic diagram；
Description of symbols: 1- substrate glass, 2- metal anode (one of Al, Ag, Cu), 3- hole injection layer
MoO3, 4- hole transmission layer TCTA, 5- luminescent layer TCTA:Ir (ppy)2, 6- electron transfer layer TPBi, 7- metallic cathode Ag；
OLED device of the Fig. 2 through making on the processed metal anode of embodiment one measures hair when driving voltage is 5V
The brightness value in each region of light unit；
Fig. 3 is the OLED device through making on the processed metal anode of embodiment two, when driving voltage is 5V, is measured
The brightness value in each region of luminescence unit；
Fig. 4 is the current density-of the OLED device through making in embodiment one and the processed metal anode of embodiment two
Voltage characteristic schematic diagram.
Specific embodiment
Embodiment one:
The present embodiment uses a kind of common corona treatment mode:
The first step, gets out the metal anode Al2 having already patterned and glass substrate 1 etc., and luminescence unit area is 30mm
×30mm；
Above-mentioned substrate is put into plasma chamber by second step, is passed through Ar, flow 50sccm, and chamber pressure control exists
20mTorr, reaction power 200W, reaction time 120s.
Embodiment two:
The processing method of top emitting Organic Light Emitting Diode metal anode of the invention:
The first step, gets out the metal anode Al2 having already patterned and glass substrate 1, luminescence unit area be 30mm ×
30mm；
Above-mentioned substrate is put into plasma chamber, is passed through H by second step2With the gaseous mixture of Ar, wherein H2With the flow of Ar
Respectively 5 and 50sccm, chamber pressure are controlled in 20mTorr, reaction power 200W, reaction time 120s；
Third step, is passed through O2, flow 30sccm, and chamber pressure controlled in 20mTorr, reaction power 200W, reaction time
180s。
Referring to Fig. 1, to verify actual effect of the invention, respectively in the processed substrate of embodiment one and two and metal sun
On extremely, according to the structure fabrication OLED device of Fig. 1, i.e., on metal anode Al2, hole injection layer MoO is successively deposited33, empty
Cave transport layer TCTA4, luminescent layer TCTA:Ir (ppy)25, electron transfer layer TPBi6, metallic cathode Ag7.
By testing the uniformity of luminance and Current density-voltage characteristic of OLED, the effect that the observation present invention reaches.Fig. 2,
Fig. 3 is respectively the OLED device made on through embodiment one and the processed metal anode of embodiment two, is in driving voltage
When 5V, the brightness value in each region of luminescence unit is measured.Use formulaIt is calculated, embodiment one and two
OLED uniformity of luminance is respectively 11.2%, 5.6%, improves one times.Fig. 4 is processed through embodiment one and embodiment two
Metal anode on the Current density-voltage characteristic of OLED device that makes, when driving voltage is 6V, embodiment one and two
OLED current density is respectively 45 and 51mA/cm2, improve 13%.
Embodiment described above is only that preferred embodiment of the invention is described, and is not carried out to the scope of the present invention
It limits, without departing from the spirit of the design of the present invention, those of ordinary skill in the art make technical solution of the present invention
Various changes and improvements, should all fall into claims of the present invention determine protection scope in.
Claims (8)
1. a kind of processing method of top emitting Organic Light Emitting Diode metal anode, which comprises the steps of:
S1 is passed through H2With Ar, N2Or the mixed gas of one of He, wherein H2Concentration be 5%-10%；
S2 is passed through O2, by controlling its flow and reaction time, one layer is formed uniformly and the gold of 3-5nm thickness in metal surface
Belong to thin oxide layer, the thin layer of metal oxide is as hole injection layer.
2. the processing method of top emitting Organic Light Emitting Diode metal anode according to claim 1, which is characterized in that step
In rapid S1, it is passed through H2With the mixed gas of Ar.
3. the processing method of top emitting Organic Light Emitting Diode metal anode according to claim 1, which is characterized in that H2
Concentration be 5%.
4. the processing method of top emitting Organic Light Emitting Diode metal anode according to claim 1, which is characterized in that H2
Concentration be 7.5% or 8%.
5. the processing method of top emitting Organic Light Emitting Diode metal anode according to claim 1, which is characterized in that H2
Concentration be 10%.
6. the processing method of top emitting Organic Light Emitting Diode metal anode according to claim 1, which is characterized in that institute
State thin layer of metal oxide with a thickness of 4nm.
7. the processing method of top emitting Organic Light Emitting Diode metal anode according to claim 1, which is characterized in that institute
State thin layer of metal oxide with a thickness of 3nm.
8. the processing method of top emitting Organic Light Emitting Diode metal anode according to claim 1, which is characterized in that institute
State thin layer of metal oxide with a thickness of 5nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811452655.7A CN109411637A (en) | 2018-11-30 | 2018-11-30 | A kind of processing method of top emitting Organic Light Emitting Diode metal anode |
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| CN201811452655.7A CN109411637A (en) | 2018-11-30 | 2018-11-30 | A kind of processing method of top emitting Organic Light Emitting Diode metal anode |
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Citations (4)
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|---|---|---|---|---|
| CN1505123A (en) * | 2002-12-04 | 2004-06-16 | ������������ʽ���� | Method for manufacturing circuit device |
| CN1988207A (en) * | 2005-12-23 | 2007-06-27 | 上海广电电子股份有限公司 | Method for treating organic light emitting device metal anode |
| CN104576954A (en) * | 2013-10-17 | 2015-04-29 | 海洋王照明科技股份有限公司 | Organic electroluminescent component and manufacturing method thereof |
| CN106920977A (en) * | 2017-04-19 | 2017-07-04 | 大连交通大学 | ITO/Nb composite modified metal double polar plates of polymer electrolyte film fuel cell and preparation method thereof |
-
2018
- 2018-11-30 CN CN201811452655.7A patent/CN109411637A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1505123A (en) * | 2002-12-04 | 2004-06-16 | ������������ʽ���� | Method for manufacturing circuit device |
| CN1988207A (en) * | 2005-12-23 | 2007-06-27 | 上海广电电子股份有限公司 | Method for treating organic light emitting device metal anode |
| CN104576954A (en) * | 2013-10-17 | 2015-04-29 | 海洋王照明科技股份有限公司 | Organic electroluminescent component and manufacturing method thereof |
| CN106920977A (en) * | 2017-04-19 | 2017-07-04 | 大连交通大学 | ITO/Nb composite modified metal double polar plates of polymer electrolyte film fuel cell and preparation method thereof |
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Application publication date: 20190301 |
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