CN109402593A - A kind of method and deposition ring preventing deposition ring arc discharge - Google Patents
A kind of method and deposition ring preventing deposition ring arc discharge Download PDFInfo
- Publication number
- CN109402593A CN109402593A CN201811302700.0A CN201811302700A CN109402593A CN 109402593 A CN109402593 A CN 109402593A CN 201811302700 A CN201811302700 A CN 201811302700A CN 109402593 A CN109402593 A CN 109402593A
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- China
- Prior art keywords
- cutter
- groove
- deposition ring
- arc discharge
- slot bottom
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000008021 deposition Effects 0.000 title claims abstract description 77
- 238000010891 electric arc Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 54
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention includes a kind of method and deposition ring for preventing deposition ring arc discharge, in physical gas-phase deposition, including: a deposition ring is provided, in opening up a groove in deposition ring；Step S1, the vertical side using one first cutter along groove is cut to the slot bottom of groove；Meanwhile it being cut along the slope side of groove to the slot bottom of groove using one second cutter；Step S2, when the slot bottom of groove is cut to level and has first preset thickness, the first cutter and the second cutter stop cutting.Beneficial effect is: being cut by the first cutter and the second cutter to groove, so that the slot bottom of groove maintains the first preset thickness, reduce thickness of the film in deposition ring, to prevent that arc discharge occurs in deposition ring, extend the service life of deposition ring, reduces the number of plant maintenance and maintenance.
Description
Technical field
The present invention relates to semiconductor integrated circuit technology field more particularly to a kind of methods for preventing deposition ring arc discharge
And deposition ring.
Background technique
Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) technique indicates under vacuum conditions, to use
Material source solid or liquid surface are gasificated into gaseous atom, molecule or partial ionization into ion, and pass through low pressure by physical method
Gas (or plasma) process has the technology of the film of certain specific function in matrix surface deposition.
In the prior art, as shown in Figure 1, including wafer T1, electrostatic chuck T2, deposition ring T3, upper ring T4, in physics gas
In phase deposition plating technique, with increasing for operation wafer, the film deposited in deposition ring is more and more thicker, with the film in deposition ring
Constantly accumulation, to the middle and later periods of process operation, the film thickness in deposition ring will be higher than deposition ring, and be in contact with wafer,
It will lead to wafer in this way and arc discharge occur, so that product wafer is scrapped.Currently in order to arc discharge is prevented, technique machine
The every race 900KWH of platform, needs to open the cavity replacement deposition ring of coating process board, and then increases time of plant maintenance and maintenance
Number, influences production efficiency.
Summary of the invention
For the above-mentioned problems in the prior art, a kind of method and deposition for preventing deposition ring arc discharge is now provided
Ring.
Specific technical solution is as follows:
A method of deposition ring arc discharge is prevented, is used in physical gas-phase deposition, including:
One deposition ring is provided, a groove is opened up in Yu Suoshu deposition ring；
Step S1, the vertical side using one first cutter along the groove is cut to the slot bottom of the groove；
Meanwhile it being cut along the slope side of the groove to the slot bottom of the groove using one second cutter；
Step S2, when the slot bottom of the groove is cut to level and has first preset thickness, first knife
Tool stops cutting with second cutter.
Preferably, first preset thickness is 2mm.
Preferably, first cutter is default to the slot bottom of groove cutting one second along the vertical side of the groove
Thickness；Meanwhile second cutter is default thick to the slot bottom of groove cutting described second along the slope side of the groove
Degree.
Preferably, second preset thickness is 0.3mm.
Preferably, first cutter is R type forming cutter；Or
Second cutter is metal knife.
Preferably, the cutting accuracy of first cutter and second cutter is 0.01mm/r.
Preferably, the cutter head revolving speed of first cutter and second cutter is 5000r/min.
Preferably, the cutter head rate of cutting of first cutter and second cutter is 0.3m/min.
A kind of deposition ring, including using the method for preventing deposition ring arc discharge described above.
Technical solution of the present invention beneficial effect is: providing a kind of method and deposition for preventing deposition ring arc discharge
Ring cuts groove by the first cutter and the second cutter, so that the slot bottom of groove maintains the first preset thickness, reduces
Thickness of the film in deposition ring extends the service life of deposition ring, reduction is set to prevent that arc discharge occurs in deposition ring
The number of standby maintenance.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is the structural schematic diagram of plated film cavity in the physical gas-phase deposition of the prior art；
Fig. 2 is the method flow diagram for preventing deposition ring arc discharge of the embodiment of the present invention；
Fig. 3 is first cutter of the embodiment of the present invention and the structural schematic diagram of the second cutter cut-in groove.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art without creative labor it is obtained it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The present invention will be further explained below with reference to the attached drawings and specific examples, but not as the limitation of the invention.
In the prior art, it as shown in Figure 1, in physical vapor deposition coating film technique, with increasing for operation wafer, sinks
The film that deposits is more and more thicker on product ring, as the film in deposition ring is constantly accumulated, to the middle and later periods of process operation, in deposition ring
Film thickness will be higher than deposition ring, and be in contact with wafer, will lead to wafer in this way and arc discharge occurs, so that brilliant
Circle scrap of the product.Currently in order to preventing arc discharge, the every race 900KWH of technique board needs to open the cavity of coating process board
Deposition ring is replaced, and then increases the number of plant maintenance and maintenance, influences production efficiency.
For the above-mentioned problems in the prior art, the present invention includes a kind of method for preventing deposition ring arc discharge,
For in physical gas-phase deposition, including:
A deposition ring 1 is provided, in opening up a groove 10 in deposition ring 1；
Step S1, the vertical side using one first cutter 2 along groove 10 is cut to the slot bottom of groove 10；
Meanwhile it being cut along the slope side of groove 10 to the slot bottom of groove 10 using one second cutter 3；
Step S2, when the slot bottom of groove 10 be cut to it is horizontal and when there is one first preset thickness H1, the first cutter 2 with
Second cutter 3 stops cutting.
It is heavy in physical vapor in conjunction with shown in Fig. 2,3 by the technical solution of the above-mentioned method for preventing deposition ring arc discharge
In product coating process, with increasing for operation wafer, to prevent the film deposited in deposition ring more and more thicker, and deposition ring is prevented
On film constantly accumulate, it is pre- to the cutting one second of the slot bottom of groove 10 along the vertical side of groove 10 using the first cutter 2 first
If thickness H2；Meanwhile the second preset thickness is cut to the slot bottom of groove 10 along the slope side of groove 10 using the second cutter 3
H2, wherein the second preset thickness H2 is 0.3mm, then when the slot bottom of groove 10 is cut to horizontal and has one first to preset
When thickness H1, the first cutter 2 and the second cutter 3 stop cutting, wherein the first preset thickness H1 is 2mm.
Further, groove 10 is cut by the first cutter 2 and the second cutter 3, so that the slot bottom of groove 10 is tieed up
It holds in the first preset thickness H1, reduces thickness of the film in deposition ring 1, to prevent that arc discharge occurs in deposition ring 1, prolong
The service life of long deposition ring reduces the number of plant maintenance and maintenance.
In a kind of preferably embodiment, as shown in figure 3, during the first cutter 2 and the second cutter 3 are cut, the
One cutter 2 can use R type forming cutter, and the second cutter 3 can use metal knife；Wherein, R type forming cutter is apart from deposition ring
At 1 edge 1.5mm, the vertical side along groove 10 cuts one second preset thickness H2 to the slot bottom of groove 10, when groove 10
When the bottom of vertical side reaches the second preset thickness H2, along groove 10 slot bottom slot bottom from edge to groove 10 middle part into
Row cutting, meanwhile, metal knife cuts the second preset thickness H2 to the slot bottom of groove 10 along the slope side of groove 10, works as groove
When the bottom of 10 slope side reaches the second preset thickness H2, along groove 10 slot bottom edge into the slot bottom of groove 10
Portion is cut, until the slot bottom of groove 10 is cut to horizontal and when having one first preset thickness H1, the first cutter 2 and the
Two cutters 3 stop cutting.
In a kind of preferably embodiment, by lot of experimental data it is found that the first cutter 2 of selection and the second cutter 3
Cutting accuracy is 0.01mm/r, and the cutter head revolving speed of the first cutter 2 and the second cutter 3 is 5000r/min, the first cutter 2 and second
The cutter head rate of cutting of cutter 3 is 0.3m/min, can be can be effectively reduced in the case where guaranteeing 1 service life of deposition ring
The thickness of deposition of the film in groove avoids the film thickness in deposition ring from being higher than deposition ring, and then film is avoided to connect with wafer
Touching, further, cuts groove 10 by the first cutter 2 and the second cutter 3, so that the slot bottom of groove 10 maintains the
One preset thickness H1 reduces thickness of the film in deposition ring 1, to prevent that arc discharge occurs in deposition ring 1, extends deposition
The service life of ring reduces the number of plant maintenance and maintenance.
The invention also includes a kind of deposition ring, including using the above-mentioned method for preventing deposition ring arc discharge, into
One step, groove 10 is cut by the first cutter 2 and the second cutter 3, so that the slot bottom of groove 10 maintains first in advance
If thickness H1, thickness of the film in deposition ring 1 is reduced, to prevent that arc discharge occurs in deposition ring 1, extends deposition ring
Service life reduces the number of plant maintenance and maintenance.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.
Claims (9)
1. a kind of method for preventing deposition ring arc discharge, in physical gas-phase deposition characterized by comprising
One deposition ring is provided, a groove is opened up in Yu Suoshu deposition ring；
Step S1, the vertical side using one first cutter along the groove is cut to the slot bottom of the groove；
Meanwhile it being cut along the slope side of the groove to the slot bottom of the groove using one second cutter；
Step S2, when the slot bottom of the groove be cut to it is horizontal and when there is first preset thickness, first cutter with
Second cutter stops cutting.
2. the method according to claim 1 for preventing deposition ring arc discharge, which is characterized in that first preset thickness
For 2mm.
3. the method according to claim 1 for preventing deposition ring arc discharge, which is characterized in that first cutter is along institute
The vertical side for stating groove cuts one second preset thickness to the slot bottom of the groove；Meanwhile second cutter is along described recessed
Second preset thickness is cut to the slot bottom of the groove in the slope side of slot.
4. the method according to claim 3 for preventing deposition ring arc discharge, which is characterized in that second preset thickness
For 0.3mm.
5. the method according to claim 1 for preventing deposition ring arc discharge, which is characterized in that first cutter is R
Type forming cutter；Or
Second cutter is metal knife.
6. the method according to claim 1 for preventing deposition ring arc discharge, which is characterized in that first cutter and institute
The cutting accuracy for stating the second cutter is 0.01mm/r.
7. the method according to claim 1 for preventing deposition ring arc discharge, which is characterized in that first cutter and institute
The cutter head revolving speed for stating the second cutter is 5000r/min.
8. the method according to claim 1 for preventing deposition ring arc discharge, which is characterized in that first cutter and institute
The cutter head rate of cutting for stating the second cutter is 0.3m/min.
9. a kind of deposition ring, which is characterized in that prevent deposition ring arc discharge described in the claims 1-8 including using
Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811302700.0A CN109402593A (en) | 2018-11-02 | 2018-11-02 | A kind of method and deposition ring preventing deposition ring arc discharge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811302700.0A CN109402593A (en) | 2018-11-02 | 2018-11-02 | A kind of method and deposition ring preventing deposition ring arc discharge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109402593A true CN109402593A (en) | 2019-03-01 |
Family
ID=65471237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811302700.0A Pending CN109402593A (en) | 2018-11-02 | 2018-11-02 | A kind of method and deposition ring preventing deposition ring arc discharge |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109402593A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115110042A (en) * | 2021-03-22 | 2022-09-27 | 台湾积体电路制造股份有限公司 | Physical vapor deposition reaction chamber and using method thereof |
| TWI804827B (en) * | 2021-03-22 | 2023-06-11 | 台灣積體電路製造股份有限公司 | Physical vapor deposition chamber and method of using the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1847446A (en) * | 2005-04-05 | 2006-10-18 | 台湾积体电路制造股份有限公司 | Physical vapor deposition equipment and its electrodes and its deposition ring |
| CN101083223A (en) * | 2006-05-30 | 2007-12-05 | 应用材料股份有限公司 | Ring assembly for substrate processing chamber |
| CN201089791Y (en) * | 2007-07-10 | 2008-07-23 | 联华电子股份有限公司 | Wafer bearing device of sputtering machine platform |
| CN101405431A (en) * | 2006-03-07 | 2009-04-08 | 应用材料股份有限公司 | Notched deposition ring |
| CN103069542A (en) * | 2010-08-20 | 2013-04-24 | 应用材料公司 | Extended life deposition ring |
| CN207176067U (en) * | 2017-06-08 | 2018-04-03 | 北京北方华创微电子装备有限公司 | Deposition ring and chuck assembly |
-
2018
- 2018-11-02 CN CN201811302700.0A patent/CN109402593A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1847446A (en) * | 2005-04-05 | 2006-10-18 | 台湾积体电路制造股份有限公司 | Physical vapor deposition equipment and its electrodes and its deposition ring |
| CN101405431A (en) * | 2006-03-07 | 2009-04-08 | 应用材料股份有限公司 | Notched deposition ring |
| CN101083223A (en) * | 2006-05-30 | 2007-12-05 | 应用材料股份有限公司 | Ring assembly for substrate processing chamber |
| CN201089791Y (en) * | 2007-07-10 | 2008-07-23 | 联华电子股份有限公司 | Wafer bearing device of sputtering machine platform |
| CN103069542A (en) * | 2010-08-20 | 2013-04-24 | 应用材料公司 | Extended life deposition ring |
| CN207176067U (en) * | 2017-06-08 | 2018-04-03 | 北京北方华创微电子装备有限公司 | Deposition ring and chuck assembly |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115110042A (en) * | 2021-03-22 | 2022-09-27 | 台湾积体电路制造股份有限公司 | Physical vapor deposition reaction chamber and using method thereof |
| TWI804827B (en) * | 2021-03-22 | 2023-06-11 | 台灣積體電路製造股份有限公司 | Physical vapor deposition chamber and method of using the same |
| CN115110042B (en) * | 2021-03-22 | 2024-03-01 | 台湾积体电路制造股份有限公司 | Physical vapor deposition reaction chamber and use method thereof |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190301 |
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| RJ01 | Rejection of invention patent application after publication |