[go: up one dir, main page]

CN109397070A - The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold - Google Patents

The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold Download PDF

Info

Publication number
CN109397070A
CN109397070A CN201811240107.8A CN201811240107A CN109397070A CN 109397070 A CN109397070 A CN 109397070A CN 201811240107 A CN201811240107 A CN 201811240107A CN 109397070 A CN109397070 A CN 109397070A
Authority
CN
China
Prior art keywords
ceramic
polishing
substrate
wafer
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811240107.8A
Other languages
Chinese (zh)
Inventor
于榛
于一榛
孙夺
曹高奇
邓双燕
杨波
邵秀梅
李雪
龚海梅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Technical Physics of CAS
Original Assignee
Shanghai Institute of Technical Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Technical Physics of CAS filed Critical Shanghai Institute of Technical Physics of CAS
Priority to CN201811240107.8A priority Critical patent/CN109397070A/en
Publication of CN109397070A publication Critical patent/CN109397070A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

本发明公开了一种用于磷化铟晶圆片及其外延晶圆片抛光模具，其结构包括陶瓷沟道、陶瓷基板、配重块。在抛光垫和陶瓷基板之间起支撑作用的陶瓷沟道。通过在陶瓷基板上增加陶瓷沟道，应用本发明所述的抛光模具可以降低抛光模具的复杂程度，使抛光过程中模具自转稳定，同时加快抛光速率，以获得高平整度的衬底，并降低工艺成本。

The invention discloses a polishing die for indium phosphide wafers and epitaxial wafers. The structure includes a ceramic channel, a ceramic substrate and a counterweight. Ceramic channels that provide support between the polishing pad and the ceramic substrate. By adding ceramic channels on the ceramic substrate, the application of the polishing mold of the present invention can reduce the complexity of the polishing mold, stabilize the rotation of the mold during the polishing process, and speed up the polishing rate at the same time, so as to obtain a substrate with high flatness and reduce process cost.

Description

The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold
Technical field
The present invention relates to the wafer level processing techniques field of semiconductor crystal wafer sheet material, in particular to it is related to a kind of for phosphorus Change the polishing mold of indium chip and its epitaxial wafer.
Background technique
Indium phosphide (InP) has high breakdown electric field and high electricity as a kind of important III-V group semi-conductor material Sub- average drift velocity, while its electro-optical efficiency and capability of resistance to radiation are also relatively strong, it can be in optic communication, microwave, millimeter wave Device, photovoltaic cell, infrared detector etc. realize important application.Currently, the material of InP-base is answered in multiple fields With, such as laser diode, light emitting diode, infrared focal plane device etc..
In InP-base device and InP epitaxial material preparation process, it is required to be processed by shot blasting chip.Currently, mainstream InP polishing method be using chemically mechanical polishing.Since the K-hardness of InP is smaller, thus it is easy to damage in process Wound generates deformation.Thus it is guaranteed that the surface quality of burnishing surface can be to the performance and growth high quality for preparing high performance device Epitaxial material it is particularly important.During the polishing process, the stability of sample rotation will directly affect the surface topography of final sample And flatness.Therefore complex for the polissoir structure of InP substrate processing at present due to special material properties, from And increases research and development cost and reduce processing efficiency.
Therefore, in view of the above problems, needing to propose new solution.
Summary of the invention
The purpose of the present invention is to provide a kind of InP wafer and its polishing molds of epitaxial material wafer, to overcome The deficiencies in the prior art make polishing process have high stability and high duplication, to promote working efficiency and product Yield.Compared to traditional polishing patch substrate, ceramic channel is introduced slide glass substrate for the first time by the present invention, so that sample is polished Rotation is stablized in journey, and is guided polishing fluid into sample and increased polishing efficiency.Mold can be effectively reduced using this ceramic channel Complexity, reduce process costs, while play the role of protect sample.
Polishing mold of the present invention further comprises:
As shown in Figure 1, mold includes ceramic substrate 1, ceramic channel 1-1, clump weight 2.
Sample as shown in Figure 2 is pasted in 1 center of ceramic substrate, and there are 2~6 groups of ceramics channel 1-1 on the surface of ceramic substrate 1, It is distributed in sample surrounding；Every group of ceramics channel 1-1 is made of 3-10 bulge-structure.
As shown in figure 3, being higher by 100~1000 microns of 1 surface of ceramic substrate, ceramic channel 1-1 at the top of ceramic channel 1-1 Groove depth be 0.1~0.5cm.
As shown in Figure 1, mold tips upside down on polishing pad in polishing, clump weight 2 is located at 1 top of ceramic substrate.
Clump weight 2 during the polishing process, is fixed on ceramic substrate 1；The weight per unit area that clump weight applies, with ceramics The gross area of channel 1-1 and sample calculates, and range is in 50~500g/cm2。
The present invention has the advantages that
A. the polishing mold can reduce the complexity of polishing mold by the ceramic channel of increase on ceramic substrate, Promote high production and efficiency of research and development.
B. ceramic channel facilitates die table rotation in polishing process, makes sample after a polish and can obtain and is high smooth Degree.
C. ceramic channel and polishing pad have lesser contact area, while can guide polishing fluid into sample, to be promoted Polishing speed.
Detailed description of the invention
Fig. 1 is polishing die structure dwg of the invention.
Fig. 2 is ceramic channel schematic diagram of the invention.
Fig. 3 is polishing mold stereoscopic schematic diagram of the invention.
In figure:
1 --- ceramic substrate；
1-1 --- ceramic channel；
2 --- clump weight.
Specific embodiment
Embodiment 1
1 ceramic channel height is 300 microns, groove depth 0.3cm.
350 microns of thick 2 inch indium phosphide wafers are sticked in ceramic substrate by 2.
3 fixed weight blocks make sample stress 250g/cm2, polishing disk rotating speed range 80rpm.
Embodiment 2
1 ceramic channel height is 100 microns, groove depth 0.1cm.
The indium phosphide wafer of 150 microns of thick 3 inch extension indium aluminium arsenic is sticked in ceramic substrate by 2.
3 increase clump weight, make sample stress 50g/cm2, polishing disk rotating speed range 30rpm.
Embodiment 3
1 ceramic channel height is 1000 microns, groove depth 0.5cm.
The indium phosphide wafer of 800 microns of thick 4 inch extension indium gallium arsenic is sticked in ceramic substrate by 2.
3 increase clump weight, make sample stress 500g/cm2, polishing disk rotating speed range 120rpm.

Claims (3)

1.一种磷化铟晶圆片及其外延晶圆片的衬底抛光模具，包括陶瓷基板(1)、陶瓷沟道(1-1)、配重块(2)，其特征在于：1. A substrate polishing die for an indium phosphide wafer and an epitaxial wafer thereof, comprising a ceramic substrate (1), a ceramic channel (1-1), a counterweight (2), characterized in that: 待抛光的样品黏贴在陶瓷基板(1)中央，陶瓷基板(1)上有2～6组陶瓷沟道(1-1)，均布于样品四周；每组陶瓷沟道(1-1)由3-10条凸起结构组成；在抛光时，模具倒扣在抛光垫上，配重块(2)置于陶瓷基板(1)上。The sample to be polished is pasted in the center of the ceramic substrate (1), and there are 2 to 6 groups of ceramic channels (1-1) on the ceramic substrate (1), which are evenly distributed around the sample; each group of ceramic channels (1-1) It consists of 3-10 raised structures; during polishing, the mold is buckled upside down on the polishing pad, and the counterweight (2) is placed on the ceramic substrate (1). 2.根据权利要求1所述的一种磷化铟晶圆片及其外延晶圆片的衬底抛光模具，其特征在于：所述的陶瓷沟道(1-1)凸起结构的顶部高出陶瓷基板(1)表面100～1000微米，陶瓷沟道(1-1)的槽深为0.1～0.5cm。2 . The substrate polishing mold for an indium phosphide wafer and an epitaxial wafer thereof according to claim 1 , wherein the top of the protruding structure of the ceramic channel (1-1) is high The surface of the ceramic substrate (1) is 100-1000 microns, and the groove depth of the ceramic channel (1-1) is 0.1-0.5 cm. 3.根据权利要求1所述的一种磷化铟晶圆片及其外延晶圆片的衬底抛光模具，其特征在于：所述的配重块(2)施加的单位面积重量，以陶瓷沟道(1-1)和样品的总面积计算，其范围在50～500g/cm2。3. The substrate polishing die for an indium phosphide wafer and an epitaxial wafer thereof according to claim 1, wherein the weight per unit area applied by the counterweight (2) is made of ceramic The total area of the channel (1-1) and the sample is calculated to be in the range of 50 to 500 g/cm 2 .
CN201811240107.8A 2018-10-24 2018-10-24 The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold Pending CN109397070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811240107.8A CN109397070A (en) 2018-10-24 2018-10-24 The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811240107.8A CN109397070A (en) 2018-10-24 2018-10-24 The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold

Publications (1)

Publication Number Publication Date
CN109397070A true CN109397070A (en) 2019-03-01

Family

ID=65468864

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811240107.8A Pending CN109397070A (en) 2018-10-24 2018-10-24 The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold

Country Status (1)

Country Link
CN (1) CN109397070A (en)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1254441A (en) * 1997-04-30 2000-05-24 美国3M公司 Method of planarizing upper surface of semiconductor wafer
JP2001121405A (en) * 1999-10-25 2001-05-08 Matsushita Electric Ind Co Ltd Polishing pad
CN1312742C (en) * 1999-03-30 2007-04-25 株式会社尼康 Polishing disk, polishing machine and method for manufacturing semiconductor
CN201151081Y (en) * 2007-10-16 2008-11-19 魏荣志 Guide ring structure
CN102049723A (en) * 2009-10-28 2011-05-11 硅电子股份公司 Method for polishing a semiconductor wafer
CN203418417U (en) * 2013-08-12 2014-02-05 元鸿（山东）光电材料有限公司 Precision polishing clamping ceramic plate for sapphire substrate material
CN104476384A (en) * 2011-09-15 2015-04-01 硅电子股份公司 Method for the double-side polishing of a semiconductor wafer
CN204954602U (en) * 2015-09-19 2016-01-13 哈尔滨秋冠光电科技有限公司 Modified pottery structure of twining
KR20160115789A (en) * 2015-03-26 2016-10-06 다우 글로벌 테크놀로지스 엘엘씨 Polishing pad window
CN106233431A (en) * 2014-04-22 2016-12-14 应用材料公司 Inner surface has the retainer ring of facet
CN106670956A (en) * 2015-11-03 2017-05-17 力晶科技股份有限公司 Polishing apparatus and polishing method
CN206925702U (en) * 2017-07-08 2018-01-26 上海致领半导体科技发展有限公司 It is a kind of for semiconductor wafer polishing without wax polishing template
CN108356684A (en) * 2017-12-13 2018-08-03 中国电子科技集团公司第十三研究所 A kind of semiconductor wafer polishing apparatus vacuum suction template and burnishing device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1254441A (en) * 1997-04-30 2000-05-24 美国3M公司 Method of planarizing upper surface of semiconductor wafer
CN1312742C (en) * 1999-03-30 2007-04-25 株式会社尼康 Polishing disk, polishing machine and method for manufacturing semiconductor
JP2001121405A (en) * 1999-10-25 2001-05-08 Matsushita Electric Ind Co Ltd Polishing pad
CN201151081Y (en) * 2007-10-16 2008-11-19 魏荣志 Guide ring structure
CN102049723A (en) * 2009-10-28 2011-05-11 硅电子股份公司 Method for polishing a semiconductor wafer
CN104476384A (en) * 2011-09-15 2015-04-01 硅电子股份公司 Method for the double-side polishing of a semiconductor wafer
CN203418417U (en) * 2013-08-12 2014-02-05 元鸿（山东）光电材料有限公司 Precision polishing clamping ceramic plate for sapphire substrate material
CN106233431A (en) * 2014-04-22 2016-12-14 应用材料公司 Inner surface has the retainer ring of facet
KR20160115789A (en) * 2015-03-26 2016-10-06 다우 글로벌 테크놀로지스 엘엘씨 Polishing pad window
CN204954602U (en) * 2015-09-19 2016-01-13 哈尔滨秋冠光电科技有限公司 Modified pottery structure of twining
CN106670956A (en) * 2015-11-03 2017-05-17 力晶科技股份有限公司 Polishing apparatus and polishing method
CN206925702U (en) * 2017-07-08 2018-01-26 上海致领半导体科技发展有限公司 It is a kind of for semiconductor wafer polishing without wax polishing template
CN108356684A (en) * 2017-12-13 2018-08-03 中国电子科技集团公司第十三研究所 A kind of semiconductor wafer polishing apparatus vacuum suction template and burnishing device

Similar Documents

Publication Publication Date Title
CN101673668B (en) Method for polishing gallium nitride crystals
CN105081893B (en) A kind of ultra-thin Ge monocrystalline substrate materials and preparation method thereof
WO2006031641A2 (en) Method of manufacturing carrier wafer and resulting carrier wafer structures
CN102240967A (en) Zinc oxide single crystal polishing technology for substrate of photoelectric device
CN103235364B (en) Planar optical waveguide splitter chip cutting technique
CN106625204B (en) A kind of back side process method of large scale SiC wafer
CN106328778B (en) Method for preparing LED chips with positive, inverted and inverted trapezoidal mesa substrates by stealth dicing
JP3904943B2 (en) Sapphire wafer processing method and electronic device manufacturing method
JP6844733B1 (en) Substrate wafer manufacturing method and substrate wafer
CN105470122A (en) SiC thinning method
CN103870813A (en) Fingerprint sensor and electronic equipment
CN103862354B (en) Processing method of ultra-thin single crystal germanium wafer
CN109397070A (en) The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold
CN104238032A (en) Method for manufacturing miniaturized Y-waveguide tail fibers
CN104465330B (en) Rectifier diode, chip and preparation method thereof
CN115083896A (en) A kind of multi-layer modification method and equipment of silicon carbide wafer ingot cutting wafer
CN112757150A (en) Rapid polishing method of gallium nitride single crystal material for electronic device
CN111390750B (en) Wafer surface processing device
TWI831435B (en) Method for substrate lapping
CN110253421A (en) The thining method of Group III-V semiconductor wafer
CN105932070A (en) Low-power-consumption and high-surge capacity diode rectifier chip and production technology thereof
CN113752401B (en) Method for improving flatness of SiC wafer
CN102514110B (en) Initial processing method of high-stress silicon carbide crystals
CN107658211A (en) A kind of preparation method of semiconductor wafer
CN104752570B (en) A kind of LED chip tangent method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190301