CN109371372A - A kind of balancing fields Sputting film-plating apparatus - Google Patents
A kind of balancing fields Sputting film-plating apparatus Download PDFInfo
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- CN109371372A CN109371372A CN201811576906.2A CN201811576906A CN109371372A CN 109371372 A CN109371372 A CN 109371372A CN 201811576906 A CN201811576906 A CN 201811576906A CN 109371372 A CN109371372 A CN 109371372A
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- magnetic pole
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of Sputting film-plating apparatus based on balancing fields, including horizontally disposed cathode targets, the cathode targets are rectangle tabular structure, are equipped with substrate above cathode targets in the range of 50-100mm, it is provided with magnet steel below cathode targets, the magnet steel includes magnet steel seat and magnetic pole.By the effect between the magnetic pole of magnet steel, arch magnetic field is formed in cathode targets upper surface.Magnetic inductive block is provided with below the magnetic pole, the magnetic inductive block can make magnetic field coupling on target surface, improve the utilization rate of plating membrane efficiency and target.
Description
Technical field
The invention belongs to magnetic field control field more particularly to magnetron sputtering plating fields, and in particular to one kind is based on balance
The Sputting film-plating apparatus in magnetic field.
Background technique
Current common Sputting film-plating apparatus, as shown in Figure 1, include the cathode targets 2 being horizontally set on pedestal, it is described
Cathode targets 2 are rectangle tabular structure, and substrate 3 is equipped with above cathode targets 2, is laid with magnet steel 1, institute below cathode targets 2
It states magnet steel 1 and forms arch or round magnetic field on cathode targets 2.
The working principle of magnetron sputtering refer to electronics under the action of electric field, accelerate fly to substrate during and ar atmo
It collides, ionization generates a large amount of Ar ion and new electronics, new electronics keep and Ar atomic collision, generates more
Ar ion and electronics.Ar ion accelerates to fly to cathode target under electric field action, and with high-energy bombarding cathode target surface, sputters
A large amount of target atom, the target atom or molecule deposition being in neutrality form film on substrate.Ar ion after ionizing is in electricity
Under the reciprocation in field and magnetic field, accelerate bombardment target material surface, after energy exchange, the atom of target material surface is detached from original lattice and escapes
Out, it is transferred to matrix surface and forms a film.
Magnetron sputtering is the motion path that electronics is fettered and extended with magnetic field, changes the direction of motion of electronics, improves work
The ionization rate of gas and the energy of effective use electronics.Secondary electron is during accelerating to fly to substrate by magnetic field Lorentz
The influence of power is largely bound in the heating region of target surface, and plasma density is very high in the region, mostly
Secondary electron is circled around target surface under the influence of a magnetic field, and the motion path of the electronics is very long.Other parts can be flown to
The regions such as substrate, vacuum chamber interior walls and target power supply anode.In spatter film forming, part electronics is flown to rapidly under electric field force effect
Substrate surface, will cause electron movement path it is short, bombardment on substrate speed it is fast, cause substrate temperature to increase, to a certain degree
On will affect quality of forming film, cause film layer potentially some defects.
Magnetron sputtering includes many types, working principle of having nothing in common with each other and application.According to the field bit of magnetron cathode
The difference of shape distribution, is broadly divided into equilibrium state and non-balance magnetically controlled sputter.It is to utilize magnetic field and electricity regardless of balance/unbalance
Field reciprocation, makes electronics spiral operation near target surface, to increase the probability that electronic impact argon gas generates ion.
Generated ion hits target surface under electric field action to sputter target.
The magnetic flux of the cathode internal-external magnetic steel of equilibrium state magnetron sputtering is roughly equal, and the two poles of the earth magnetic line of force is closed on target,
Well by electronics/plasma confinement near target, increases collision probability, improve efficiency of ionization, thus lower
Build-up of luminance and glow discharge can be maintained under operating air pressure and voltage, target utilization is relatively high.
But unbalanced magnetron sputtering also has shortcoming, such as: the electronics generated due to magnetic fields, glow discharge and sputtering
Secondary electron out is tightly constrained near target surface by parallel magnetic field, and plasma slab is consumingly strapped in target surface about
The region of 60mm, with the increase for leaving target surface distance, plasma concentration is reduced rapidly, at this moment can only be work piece in magnetic control
In the range of the 50-100mm of target surface, to enhance the effect of ion bombardment.Effective plated film area short in this way limits workpiece to be plated
Geometric dimension, be unsuitable for biggish workpiece or batch, constrain the application of magnetron sputtering technique.And it is sputtered in unbalanced magnetron
When, the target particle energy to fly out is lower, and in the application of big workpiece, bombardment efficiency is insufficient instead.
Non-balance magnetically controlled sputter is that magnetron cathode outer magnetic pole magnetic flux is allowed to be greater than internal magnetic pole, and the two poles of the earth magnetic line of force is incomplete in target surface
Closure, the part magnetic line of force can extend to substrate region along the edge of target, so that part electronics can expand to base along the magnetic line of force
Piece increases the plasma density and gas ionization rate of substrate region.
Since non-balance magnetically controlled sputter can increase the plasma density and gas ionization degree of substrate region, generally in base
The target particle energy that piece near zone flies out is higher, can enhance the effect of ion bombardment, and film substrate bond strength is also preferable, also more
Suitable for biggish film-coating workpiece, therefore, currently unbalanced magnetic field mode is mostly used to carry out magnetron sputtering greatly.However, Nonequilibrium magnetic
Magnetron sputtering under field type equally has the problem that
1, to electron confinement deficiency in sputtering process, run duration is short in the plasma for electronics, and electronics participates in gas point
The process of son collision and ionization is short, and the ion ionized out is few, and the ionization level of gas is low, the efficiency and deposition rate integrally sputtered
Difference.
2, unbalanced magnetic field causes film layer and substrate of the high energy electron bombardment in film forming procedure, causes fine lack that form a film
It falls into, influences film quality.
3, the sputtering of target material surface is scanned there are some weakness zones, target utilization is not high.
For the above problem existing for the magnetron sputtering under the conditions of balancing fields and unbalanced magnetic field, it is particularly applied to low
In the plated film film formation process of resistance, high-quality ITO or metal targets, under the conditions of unbalanced magnetic field, high energy electron causes film
Layer damage, forms size 10-50 microns of interrupted strip, seriously affects product quality.Therefore, it is necessary to develop a kind of at film quality
Amount is good, effectively promotes plating piece quality, the high magnetic control sputtering device of target utilization and method.
Summary of the invention
In order to solve unbalanced magnetic field bring substrate damage, the problems such as sputtering yield is poor, target utilization is low, change simultaneously
The problems such as kind balancing fields limit the geometric dimension of workpiece to be plated, and the target particle energy to fly out is lower.
The present invention proposes a kind of Sputting film-plating apparatus of balancing fields, including horizontally disposed cathode targets, the cathode
Target is rectangle tabular structure, is equipped with substrate above cathode targets in the range of 50-100mm, is provided with below cathode targets
Magnet steel, the magnet steel include magnet steel seat and magnetic pole.By the effect between the magnetic pole of magnet steel, arch is formed in cathode targets upper surface
Magnetic field.Magnetic inductive block is provided with below the magnetic pole, the magnetic inductive block can make magnetic field coupling on target surface, and raising plated film is imitated
The utilization rate of rate and target.
The magnetic field is the balancing fields of standard, and the magnetic line of force between magnetic pole is closed near target, at the both ends of magnet steel
It is set as the magnetic pole of two pole N, in the magnetic pole that the middle Position Design of magnet steel is the pole S, i.e., the described pole S to the two of both ends
A pole N is equidistant, the magnetic inductive block be set to the underface of the pole S magnetic pole and the pole the N magnetic pole at magnet steel both ends just under
Side can make magnetic field be coupled in right above target surface completely, and not extra magnetic field rests on the outside at target surface both ends, improve plating
Membrane efficiency.
Balancing fields provided by the invention, make the two poles of the earth magnetic line of force be closed to target surface, do not form redundant space diffusion, it is ensured that electricity
Son/plasma constrains near target surface as far as possible, build-up of luminance and aura can be maintained to put under lower operating air pressure and voltage
Electricity, it is ensured that plating membrane efficiency.Meanwhile it being compared to unbalanced magnetic field, electric and magnetic fields ensure electricity to the constraint ability of electronics
It is sub to be effectively strapped in the region of target surface, essentially eliminate bombardment of the electronics to substrate, target caused by electronics high energy bombards
The micro- interrupted shape of material film layer is bad, effectively improves micro- interrupted shape defect in low resistance high-quality target film forming procedure, will improve
Preceding about 4% is bad at high proportion, and it is bad to be reduced to about 0.08% minimum ratio, has for the quality of forming film of the target of high-quality
It significantly improves, effectively promotion product quality.Magnetic field structure it is perfect so that the increase of the effective sputtering surface of target material surface, simultaneously
It is provided with magnetic inductive block below magnetic pole, magnetic field strength is improved by magnetic inductive block, so that the magnetic field strength of balancing fields of the invention
It can satisfy the energy requirement of ionization electron bombardment target as sputter film forming.
Detailed description of the invention
Fig. 1 is existing magnetic control sputtering device schematic diagram；
Fig. 2 is the first schematic diagram of magnetic control sputtering device of the invention；
Fig. 3 is the second schematic diagram of magnetic control sputtering device of the invention
Fig. 4 is that target surface static state of the invention etches schematic diagram；
Fig. 5 is that target surface dynamic of the present invention with either-rotation motor etches schematic diagram；
Fig. 6 is the planar structure schematic diagram of magnet steel of the invention.
Appended drawing reference
1- magnet steel, 2- target, 3- substrate, 4- magnetic inductive block.
Specific embodiment
For a better understanding of the present invention, below in conjunction with attached drawing with examples illustrate the present invention, specific embodiment party
Formula is as follows.
The present invention proposes a kind of Sputting film-plating apparatus of balancing fields, including horizontally disposed cathode targets 2, the cathode
Target 2 is rectangle tabular structure, and substrate 3 is equipped in the range of 2 top 50-100mm of cathode targets, is set below cathode targets 2
It is equipped with magnet steel 1, the magnet steel 1 includes magnet steel seat and magnetic pole.By the effect between the magnetic pole of magnet steel, the magnet steel 1 is in cathode target
2 upper surface of material forms arch magnetic field.Magnetic inductive block 4 is provided with below the magnetic pole, the magnetic inductive block can make magnetic field coupling
In on target surface, the utilization rate of plating membrane efficiency and target is improved.
In a particular embodiment, as shown in Fig. 2, the magnetic field is the balancing fields of standard, the magnetic line of force between magnetic pole is closed
Near target 2, it is set as the magnetic pole of two pole N at the both ends of magnet steel 1, is a S in the middle Position Design of magnet steel 1
The magnetic pole of pole, i.e., two poles N of the described pole S to both ends are equidistant, and the magnetic inductive block 4 is being set to the pole S magnetic pole just
The underface of the pole the N magnetic pole at 1 both ends of lower section and magnet steel, under the conditions of such balancing fields, magnetic field is coupled in completely on entire target surface,
The not extra magnetic field waste in the outside at target surface both ends.
In the preferred scheme, the width L of the magnet steel 1 is 150mm, and the wide span of the target is 200mm, described
The width L1 of projection of the pole the N magnetic pole on target surface is 10mm, and the width L2 of projection of the pole the S magnetic pole on target surface is 20mm,
The pole N magnetic pole and the pole S magnetic pole height be 30mm, the magnetic inductive block 4 be 12mm thickness iron block, and target surface top parallel magnetic field
Intensity be 480-550 Gauss.Under the conditions of such balancing fields, magnetic field is coupled in completely on entire target surface, has both ensured target surface
The covering of the top magnetic field all position Jun You, while the also not extra magnetic field waste of the outside at target surface both ends, therefore, target utilizes
Rate and plating membrane efficiency are higher, and target utilization promotes about 3-5%,.
In preferred technical solution, as shown in Figure 3,4, the magnetic field is the balancing fields of standard, and the magnetic field uses
Double course structure is set as the magnetic pole of two pole N at the both ends of magnet steel 1, is in addition designed as one in the middle position of magnet steel 1
The magnetic pole of the pole N, i.e., two poles N of the pole N in the described middle position to both ends are equidistant, at the middle position and both ends
In addition the middle of the pole N of position sets two pole S electrodes, i.e., the described pole the S electrode and the two neighbouring pole N electrode distance phases again
Deng.Magnetic inductive block 4 is equipped with below the magnet steel 1, the magnetic inductive block 4 is set to 1 both ends of underface and magnet steel of the pole S magnetic pole
The underface of the pole N magnetic pole.
In the preferred scheme, the width L of the magnet steel 1 is 150mm, and the wide span of the target is 200mm, described
The width L1 of projection of the pole the N magnetic pole at both ends on target surface is 10mm, and the pole N in the pole S magnetic pole and middle position is on target surface
The width L2 of projection be 20mm, the pole N magnetic pole and the pole S magnetic pole height are 30mm, magnetic inductive block is equipped with below the magnet steel,
The magnetic inductive block 4 is the iron block of 12mm thickness, and the intensity of parallel magnetic field is 480-550 Gauss above target surface.In the present solution,
Tetra- positions A1, A2, B1, B2 form etching operation runways on target surface, the distance between each two etching grooves of runway La12 and
Lb12 is 44mm, and the distance between two etching grooves in inside of two runways Lab2 is 40mm, and magnetic field component width is 150mm,
The design of double course structure, increases target surface etching area, 2 utilization rate of target can be improved.
In preferred technical solution, the magnetic field uses double course structure, meanwhile, it is two-way below magnet steel 1 to be connected with one
Motor, the either-rotation motor moving distance is +/- 18mm, as shown in figure 5, i.e. entire 1 width of magnet steel is covering for the magnetic field of 150mm
Lid range is 186mm, on target surface four etching runways from linear etching become face type etching, the etching groove of each runway across
Spending Le is 36mm, and the distance between each two etching grooves of runway La12 ' and Lb12 ' is 8mm, the inside of two runways two
The distance between etching groove Lab2 ' is 4mm, and target surface parallel magnetic field strength is the standard equilibration magnetic field of 480-550 Gauss.
It is that an either-rotation motor can also be connected with below magnet steel 1 in embodiment in single track elements, the either-rotation motor moves
Dynamic distance is +/- 18mm.
As shown in fig. 6, design can also be optimized to the magnetic field at 1 both ends of magnet steel in other technical solutions, lead to
The magnetic pole length for slightly shortening the pole S of magnet steel 1 is crossed, weakening segmentation is carried out to magnetic pole, to reduce the most fast etch areas in magnetic circuit end
Etching speed so that the etching speed of entire target surface all areas reaches unanimously, the utilization rate of raising target 2.For example, described
Magnetic field is still balancing fields, and the long span L l1 of the magnet steel 1 is 1114mm, and the span L l2 that the pole the N magnetic pole at the both ends is long is set
It is set to 1091mm, the span L l3 for the magnetic pole length for reducing the pole N of the pole S and/or centre is 1044mm.
It is preferred embodiment the above are the mobile balancing fields Sputting film-plating apparatus that mentions of the present invention, can not be interpreted as pair
The limitation of rights protection scope of the present invention, those skilled in the art will be appreciated that, without departing from the inventive concept of the premise, go back
A variety of improvement or replacement can be done, all improvement or replacement all should be in the scope of the present invention, i.e., power of the invention
Sharp protection scope should be subject to the claims.In the absence of conflict, the feature in embodiment and embodiment herein-above set forth
It can be combined with each other.
Claims (9)
1. a kind of balancing fields Sputting film-plating apparatus, comprising: horizontally disposed cathode targets (2), magnet steel (1) and substrate (3), institute
Stating cathode targets (2) is rectangle tabular structure, and the substrate (3) is located above cathode targets (2) in the range of 50-100mm,
It is provided with magnet steel (1) below cathode targets (2), the magnet steel (1) includes magnet steel seat and magnetic pole, and the magnet steel (1) is in cathode target
Material (2) upper surface forms arch magnetic field；
It is characterized in that, being provided with magnetic inductive block (4) below the magnetic pole.
2. balancing fields Sputting film-plating apparatus according to claim 1, which is characterized in that the both ends of magnet steel (1) are provided with
The magnetic pole of two pole N is equipped with the magnetic pole of the pole S in the middle position of magnet steel (1), and the magnetic inductive block (4) is set to the S
The underface of the pole the N magnetic pole of the underface of pole magnetic pole and magnet steel (1) both ends.
3. balancing fields Sputting film-plating apparatus according to claim 2, which is characterized in that the width of the magnet steel (1) is
150mm, the wide span of the target are 200mm, and the width of projection of the pole the N magnetic pole on target surface is 10mm, the pole S
The width of projection of the magnetic pole on target surface is 20mm, and the pole N magnetic pole and the pole S magnetic pole height are 30mm, the magnetic inductive block (4)
For the iron block of 12mm thickness, and the intensity of parallel magnetic field is 480-550 Gauss above target surface.
4. balancing fields Sputting film-plating apparatus according to claim 3, which is characterized in that the long span of the magnet steel (1)
For 1114mm, the long span of the pole the N magnetic pole at the both ends is set as 1091mm, and the long span of the magnetic pole of the reduction pole S is 1044mm.
5. balancing fields Sputting film-plating apparatus according to claim 3, which is characterized in that be connected with below the magnet steel (1)
One either-rotation motor, the either-rotation motor moving distance are +/- 18mm.
6. balancing fields Sputting film-plating apparatus according to claim 1, which is characterized in that the magnetic field uses double course knot
Structure, is set as the magnetic pole of two pole N at the both ends of magnet steel (1), is in addition designed as the pole N in the middle position of magnet steel (1)
Magnetic pole, in addition set two pole S electrodes, the magnetic inductive block again in the middle of the middle position and the pole N of end positions
(4) underface of the pole S magnetic pole and the underface of magnet steel (1) edge position are set to.
7. balancing fields Sputting film-plating apparatus according to claim 6, which is characterized in that the width of the magnet steel (1) is
150mm, the wide span of the target are 200mm, and the width of projection of the pole the N magnetic pole at the both ends on target surface is 10mm,
The width of projection of the pole N in the pole S magnetic pole and middle position on target surface is 20mm, the pole N magnetic pole and the pole S magnetic pole height
It is 30mm, is equipped with magnetic inductive block below the magnet steel, the magnetic inductive block (4) is the iron block of 12mm thickness, and the parallel magnetic in target surface top
The intensity of field is 480-550 Gauss.
8. balancing fields Sputting film-plating apparatus according to claim 7, which is characterized in that be connected with below the magnet steel (1)
One either-rotation motor, the either-rotation motor moving distance are +/- 18mm.
9. balancing fields Sputting film-plating apparatus according to claim 7, which is characterized in that the long span of the magnet steel (1)
For 1114mm, the long span of the pole the N magnetic pole at the both ends is set as 1091mm, the span of the reduction pole S and the intermediate pole N magnetic pole length
For 1044mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811576906.2A CN109371372A (en) | 2018-12-23 | 2018-12-23 | A kind of balancing fields Sputting film-plating apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811576906.2A CN109371372A (en) | 2018-12-23 | 2018-12-23 | A kind of balancing fields Sputting film-plating apparatus |
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| Publication Number | Publication Date |
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| CN109371372A true CN109371372A (en) | 2019-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811576906.2A Pending CN109371372A (en) | 2018-12-23 | 2018-12-23 | A kind of balancing fields Sputting film-plating apparatus |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109735821A (en) * | 2019-03-19 | 2019-05-10 | 杭州朗为科技有限公司 | A kind of cathode of high field intensity high target utilization ratio |
| CN118086852A (en) * | 2024-04-28 | 2024-05-28 | 苏州维克优真空技术有限公司 | Bidirectional coating cathode mechanism, coating production line and bidirectional coating method |
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| CN201250284Y (en) * | 2008-09-12 | 2009-06-03 | 西安工业大学 | Magnetic control sputtering device |
| JP4948681B2 (en) * | 2010-09-13 | 2012-06-06 | 株式会社シンクロン | Magnetic field generator, magnetron cathode and sputtering device |
| CN102534513A (en) * | 2011-12-19 | 2012-07-04 | 东莞市汇成真空科技有限公司 | A Rectangular Planar Cathodic Arc Evaporation Source Combined with Magnetic Field |
| CN209508395U (en) * | 2018-12-23 | 2019-10-18 | 浙江莱宝科技有限公司 | A kind of balancing fields Sputting film-plating apparatus |
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2018
- 2018-12-23 CN CN201811576906.2A patent/CN109371372A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201250284Y (en) * | 2008-09-12 | 2009-06-03 | 西安工业大学 | Magnetic control sputtering device |
| JP4948681B2 (en) * | 2010-09-13 | 2012-06-06 | 株式会社シンクロン | Magnetic field generator, magnetron cathode and sputtering device |
| CN102534513A (en) * | 2011-12-19 | 2012-07-04 | 东莞市汇成真空科技有限公司 | A Rectangular Planar Cathodic Arc Evaporation Source Combined with Magnetic Field |
| CN209508395U (en) * | 2018-12-23 | 2019-10-18 | 浙江莱宝科技有限公司 | A kind of balancing fields Sputting film-plating apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109735821A (en) * | 2019-03-19 | 2019-05-10 | 杭州朗为科技有限公司 | A kind of cathode of high field intensity high target utilization ratio |
| CN118086852A (en) * | 2024-04-28 | 2024-05-28 | 苏州维克优真空技术有限公司 | Bidirectional coating cathode mechanism, coating production line and bidirectional coating method |
| CN118086852B (en) * | 2024-04-28 | 2024-07-02 | 苏州维克优真空技术有限公司 | Bidirectional coating cathode mechanism, coating production line and bidirectional coating method |
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