CN109361138B - Slab laser gain medium packaging method - Google Patents
Slab laser gain medium packaging method Download PDFInfo
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- CN109361138B CN109361138B CN201811372167.5A CN201811372167A CN109361138B CN 109361138 B CN109361138 B CN 109361138B CN 201811372167 A CN201811372167 A CN 201811372167A CN 109361138 B CN109361138 B CN 109361138B
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 238000003466 welding Methods 0.000 claims abstract description 124
- 230000007704 transition Effects 0.000 claims abstract description 33
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 57
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 22
- 229910052738 indium Inorganic materials 0.000 claims description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000012788 optical film Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000003749 cleanliness Effects 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 claims description 3
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000007787 solid Substances 0.000 abstract description 6
- 230000008646 thermal stress Effects 0.000 abstract description 6
- 230000035882 stress Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004321 preservation Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 101100153581 Bacillus anthracis topX gene Proteins 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 101150041570 TOP1 gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
Abstract
The invention discloses a slab laser gain medium packaging method, which relates to the technical field of solid lasers and comprises the following steps: coating a film on the welding surface of the slab laser gain medium; processing the welding surface of the heat sink to enable the welding surface of the heat sink to meet the specified requirements; selecting a welding transition piece, and sandwiching the selected welding transition piece through welding surfaces of the two heat sinks respectively, and sandwiching the lath laser gain medium between the two welding transition pieces to form a welded body; and welding the welding body to finish the packaging of the slab laser gain medium. The packaging method reduces the welding stress of the laser gain medium and the heat sink, thereby reducing the thermal stress of the welding layer of the laser gain medium and the heat sink and improving the beam quality and reliability of the slab laser gain medium module.
Description
Technical Field
The invention relates to the technical field of solid lasers, in particular to a slab laser gain medium packaging method, and particularly relates to a low-stress packaging method of a slab laser gain medium of a large-size solid laser.
Background
In the optical pumping process of the laser gain medium of the solid laser, as the photon energy difference between the pumping band and the upper laser energy level is thermally dispersed into the gain medium crystal lattice, the energy difference between the lower laser energy level and the base energy level is converted, and the like, the laser gain medium generates a large amount of heat, so that the temperature of the laser gain medium is rapidly increased. In order to ensure the laser gain medium to work normally, the laser gain medium must be cooled.
The slab laser gain medium enables light rays to propagate along a zigzag light path, under an ideal state, the slab structure generates a one-dimensional temperature gradient perpendicular to the large surface of the slab and a thermal stress parallel to the large surface of the slab, on the central plane of the slab, the thermal distribution is symmetrical, and the thermal stress between the large surfaces of the slab is finally an equilibrium value of 0. In practical application, however, the slab laser gain medium usually adopts indium or gold-tin alloy solder as a connecting material with the heat sink, the welding is performed at a temperature higher than the melting point of the solder, after the solder is melted and then solidified, the solder distribution of the welding layer is uneven, and the cooling of the slab laser gain medium inevitably generates unevenness, so that the welding layer generates unevenly distributed thermal stress. Under the action of thermal distortion of the welding layer, the thermal effect of the slab laser gain medium is aggravated, so that the effects of serious thermal lens effect, thermal stress birefringence, thermal diffraction damage, thermal crystal fragmentation and the like can be generated, and the beam quality and the reliability of the solid laser are directly influenced.
Disclosure of Invention
The embodiment of the invention provides a slab laser gain medium packaging method, which is used for solving the problem of thermal distortion of a welding layer during the working of a laser gain medium in the prior art.
The embodiment of the invention provides a packaging method of a slab laser gain medium suitable for a solid laser, which comprises the following steps:
a packaging method of a slab laser gain medium comprises the following steps:
coating a film on the welding surface of the slab laser gain medium;
processing the welding surface of the heat sink to enable the welding surface of the heat sink to meet the set requirement;
selecting a welding transition piece, respectively clamping the selected welding transition piece by the welding surfaces of the two processed heat sinks, and clamping the coated lath laser gain medium between the two welding transition pieces to form a welded body;
and welding the welding body to finish the packaging of the slab laser gain medium.
Optionally, the plating treatment of the slab laser gain medium is specifically to sequentially plate an optical film, a titanium film, a platinum film, a gold film and an indium film on both surfaces of the slab laser gain medium.
Optionally, a micro-channel water cooling structure is arranged inside the heat sink, and the step of processing the welding surface of the heat sink specifically comprises the step of plating a gold film and an indium film on the welding surface of the heat sink, so that the welding surface of the heat sink meets the requirement that the cleanliness is less than or equal to 0.1mg/cm2The planeness is less than or equal to 0.5 lambda, the lambda represents the wavelength, and the fineness is less than or equal to 40/20.
Optionally, the selected welding transition piece is a diamond piece, a tungsten copper piece, a gold foil, a silver foil or a copper foil, and the size of the welding transition piece is the same as the size of the welding surface of the slab laser gain medium.
Optionally, welding the welded body, specifically including,
putting the welding body into a vacuum welding furnace;
vacuum-pumping the vacuum welding furnace to 6 x 10-3~8×10-4Pa, setting the temperature of a vacuum welding furnace to be 170-260 ℃ for welding;
after preserving heat for 5-10 minutes, turning off a heating power supply of the vacuum welding furnace, and cooling to room temperature under a vacuum state;
and taking out the welding body to finish the welding process.
Optionally, the slab laser gain medium is Nd-doped3+Slab laser crystal of, Nd-doped3+Slab laser ceramics, Yb doped3+Slab laser crystal or Yb-doped3+The slab of (2) laser ceramic.
Optionally, the optical film is a silicon dioxide film with a thickness of 2-5 μm, the titanium film is 100-300 nm, the platinum film is 100-300 nm, the gold film is 300-800 nm, and the indium film is 5-80 μm.
Optionally, the thickness of the gold-plated film on the welding surface of the heat sink is 300-500 nm, and the thickness of the indium-plated film is 8-80 μm.
Optionally, the thickness of the welding transition piece is 2-150 μm.
According to the embodiment of the invention, the transition piece with the thermal expansion coefficient similar to that of the laser gain medium or good flexibility and thermal conductivity is clamped between the welding layers of the slab laser gain medium and the heat sink, so that the welding stress of the laser gain medium and the heat sink is reduced, the thermal stress of the welding layers of the laser gain medium and the heat sink is reduced, the beam quality and the reliability of the slab laser gain medium module are improved, and a positive technical effect is achieved.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a flow chart of the packaging process of slab laser gain media according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a slab laser gain medium package structure according to an embodiment of the present invention;
in the figure: 1-heat sink, 2-heat sink metal layer, 3-transition piece, 4-lath metal layer, and 5-lath laser gain medium.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The invention provides a low-stress packaging method of a slab laser gain medium, which is characterized in that a transition sheet with a thermal expansion coefficient similar to that of the laser gain medium or good flexibility and thermal conductivity is sandwiched between a welding layer of the slab laser gain medium and a welding layer of a heat sink, so that the welding stress of the laser gain medium and the heat sink is reduced, and the thermal distortion of the welding layer during the working of the laser gain medium is reduced.
A first embodiment of the present invention provides a slab laser gain medium packaging method, as shown in fig. 1, the method includes the following specific steps:
plating a film on the welding surface of the slab laser gain medium 5: an optical film, a titanium film, a platinum film, a gold film and an indium film are sequentially plated on two welding surfaces of the slab laser gain medium 5, and a slab metal layer 4 is formed on the two welding surfaces.
The welding surface of the heat sink 1 is processed, so that the welding surface of the heat sink 1 meets the set requirements:
processing the heat sink 1: the heat sink 1 in this embodiment is a red copper heat sink with a micro-channel water cooling structure inside, the welding surface of the heat sink 1 is plated with a gold film and an indium film to form a heat sink metal layer 2, and the welding surface of the heat sink 1 relative to the slab laser gain medium 5 meets the set requirement: cleanliness is less than or equal to 0.1mg/cm2The planeness is less than or equal to 0.5 lambda, lambda is the wavelength, in the embodiment, the lambda is 632.8nm, and the fineness is less than or equal to 40/20.
Selecting a welding transition piece 3:
welding a transition piece: the welding transition piece 3 is clamped between the slab laser gain medium 5 and the heat sink 1, in the embodiment, the welding transition piece 3 can be a transition piece with a thermal expansion coefficient similar to that of the laser gain medium or good flexibility and thermal conductivity, such as a diamond piece, a tungsten copper piece, a gold foil, a silver foil, a copper foil, and the like, and the size of the welding transition piece 3 is the same as the welding surface of the slab laser gain medium.
The welding transition piece that a selection was respectively sandwiched to the face of weld through two pieces of heat sinks through processing, and the lath laser gain medium that the inclusion set up after the coating film was handled constitutes the welding body between two welding transition pieces:
and fourthly, stacking to form a welded body, wherein the welded body is formed by sequentially arranging a heat sink 1 with an upward welding surface, a welding transition piece 3, a lath laser gain medium 5, the welding transition piece 3 and a heat sink 1 with a downward welding surface from bottom to top, and the above components form the welded body similar to a sandwich structure.
And welding the welding body to complete the packaging of the lath laser gain medium:
fifthly, placing the welding body into a vacuum welding furnace, vacuumizing the vacuum welding furnace to 6 multiplied by 10 before welding-3~8×10- 4Pa, setting the welding temperature to 170-260 ℃, keeping the temperature for 5-10 minutes, turning off the heating power supply, keeping the welding body in a vacuum welding furnace in a vacuum state, cooling to room temperature, taking the welding body out of the vacuum furnace, and finishing the welding process.
Alternatively, the slab laser gain medium 5 in the present invention may be a slab laser crystal doped with Nd3+, a slab laser ceramic doped with Nd3+, a slab laser crystal doped with Yb3+, a slab laser ceramic doped with Yb3+, or the like.
Under the conditions of the foregoing embodiment, in the optional embodiment, the optical film plated on the surface of the slab laser gain medium 5 is a silicon dioxide film, and the thickness is 2 to 5 μm; the thickness of the titanium film is 100-300 nm, the thickness of the platinum film is 100-300 nm, the thickness of the gold film is 300-800 nm, and the thickness of the indium film is 5-80 μm.
And a gold film and an indium film are plated on the welding surface of the heat sink 1, wherein the thickness of the gold plating film is 300-500 nm, and the thickness of the indium plating film is 8-80 mu m.
Optionally, the thickness of the welding transition piece selected in this embodiment is 2 to 150 μm, and the size of the slab laser gain medium is: the thickness is 1-3 mm, the width is 10-50 mm, and the length is 10-200 mm.
Based on the packaging method, in the embodiment, the slab laser gain medium is a Nd-YAG slab laser crystal with the size of 3mm × 40mm × 140mm, the optical film thickness of the Nd-YAG slab laser crystal is 3 μm, the titanium film thickness is 300nm, the platinum film thickness is 300nm, the gold film thickness is 800nm, and the indium film thickness is 10 μm. The transition piece is gold foil with a thickness of 50 μm and an area of 38mm × 120 mm. The gold film of the heat sink is 800nm thick, the indium film is 30 μm thick, and the area is 38mm × 120 mm. Heat sinks with upward welding surfaces are sequentially arranged from bottom to top1. The transition piece gold foil, Nd-YAG lath laser crystal, the transition piece gold foil and the heat sink 2 with the welding surface facing downwards form a welded body. Putting the welding body into a vacuum welding furnace, and vacuumizing the vacuum welding furnace to 8 multiplied by 10-4Pa, the welding temperature is 190 ℃, after the heat preservation is carried out for 5 minutes, the heating power supply is turned off, the welding process is finished after the welding process is carried out to the room temperature in a vacuum state.
Under the static condition, parallel light transmits through the strip at corresponding angles, the wave front distortion PV value is controlled within 1 μm, the RMS is controlled within 0.2 μm, under the dynamic condition of full load operation, the PV value is controlled within 2.5 μm, and the RMS value is controlled within 0.4 μm.
In a third embodiment of the present invention, based on the foregoing packaging method, in this embodiment, the slab laser gain medium is Nd: YAG slab laser ceramic, and the size is 2mm × 10mm × 80mm, the optical film thickness of the Nd: YAG slab laser ceramic is 3 μm, the titanium film thickness is 200nm, the platinum film thickness is 200nm, the gold film thickness is 600nm, and the indium film thickness is 8 μm. The transition piece is a diamond piece with a thickness of 20 μm and an area of 10mm × 60 mm. The gold film of the heat sink is 600nm thick, the indium film is 10 μm thick, and the area is 10mm × 60 mm. A heat sink 1 with an upward welding surface, a diamond sheet, Nd, YAG lath laser ceramic and the diamond sheet are sequentially arranged from bottom to top, and a heat sink 2 with a downward welding surface forms a welding body. Putting the welding body into a vacuum welding furnace, and vacuumizing the vacuum welding furnace to 6 multiplied by 10-4Pa, the welding temperature is 175 ℃, after heat preservation is carried out for 10 minutes, the heating power supply is turned off, the welding process is finished after the welding process is cooled to the room temperature in a vacuum state.
Under the static condition, parallel light transmits through the strip at corresponding angles, the wave front distortion PV value is controlled within 1 μm, the RMS is controlled within 0.2 μm, under the dynamic condition of full load operation, the PV value is controlled within 2.5 μm, and the RMS value is controlled within 0.4 μm.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (8)
1. A method for packaging a slab laser gain medium is characterized by comprising the following steps:
coating a film on the welding surface of the slab laser gain medium;
processing the welding surface of the heat sink to enable the welding surface of the heat sink to meet the set requirement;
selecting a welding transition piece, respectively clamping the selected welding transition piece by the welding surfaces of the two processed heat sinks, and clamping the coated lath laser gain medium between the two welding transition pieces to form a welded body;
welding the welding body to finish the packaging of the slab laser gain medium;
the thermal expansion coefficient of the selected welding transition piece is similar to that of the slab laser gain medium;
welding the welded body, specifically comprising,
putting the welding body into a vacuum welding furnace;
vacuum-pumping the vacuum welding furnace to 6 x 10-3~8×10-4Pa, setting the temperature of a vacuum welding furnace to be 170-260 ℃ for welding;
after preserving heat for 5-10 minutes, turning off a heating power supply of the vacuum welding furnace, and cooling to room temperature under a vacuum state;
and taking out the welding body to finish the welding process.
2. The method for packaging a slab laser gain medium according to claim 1, wherein the step of coating the slab laser gain medium comprises sequentially coating an optical film, a titanium film, a platinum film, a gold film and an indium film on both surfaces of the slab laser gain medium.
3. The slab laser gain medium packaging method according to claim 1, wherein a micro-channel water cooling structure is arranged inside the heat sink, and the step of processing the welding surface of the heat sink is specifically to plate a gold film and an indium film on the welding surface of the heat sink, so that the welding surface of the heat sink meets the requirement that the cleanliness is less than or equal to 0.1mg/cm2The planeness is less than or equal to 0.5 lambda, the lambda represents the wavelength, and the fineness is less than or equal to 40/20.
4. The packaging method of claim 3, wherein the selected welding transition piece is a diamond piece, a tungsten copper piece, a gold foil, a silver foil or a copper foil, and the size of the welding transition piece is the same as the size of the welding surface of the slab laser gain medium.
5. The method for packaging a slab laser gain medium according to any one of claims 1 to 4, wherein the slab laser gain medium is Nd-doped3+Slab laser crystal of, Nd-doped3+Slab laser ceramics, Yb doped3+Slab laser crystal or Yb-doped3+The slab of (2) laser ceramic.
6. The method for packaging a slab laser gain medium according to claim 2, wherein the optical film is a silicon dioxide film with a thickness of 2 to 5 μm, the titanium film with a thickness of 100 to 300nm, the platinum film with a thickness of 100 to 300nm, the gold film with a thickness of 300 to 800nm, and the indium film with a thickness of 5 to 80 μm.
7. The method for packaging a slab laser gain medium according to claim 3, wherein the thickness of the gold plating film on the bonding surface of the heat sink is 300-500 nm, and the thickness of the indium plating film is 8-80 μm.
8. The method for packaging a slab laser gain medium according to claim 4, wherein the thickness of the welding transition piece is 2 to 150 μm.
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CN111604611A (en) * | 2020-05-22 | 2020-09-01 | 福建科彤光电技术有限公司 | Packaging method of crystal substrate |
CN111906399A (en) * | 2020-07-01 | 2020-11-10 | 中国电子科技集团公司第十一研究所 | Single-side welding method for slab gain medium |
CN113948948A (en) * | 2021-08-31 | 2022-01-18 | 中国科学院理化技术研究所 | Laser gain medium, crystal blank cutting method and laser |
CN114289867A (en) * | 2021-12-29 | 2022-04-08 | 中红外激光研究院(江苏)有限公司 | Low-temperature welding method for laser gain medium and heat sink |
CN115533291A (en) * | 2022-09-14 | 2022-12-30 | 中国电子科技集团公司第十一研究所 | A welding method for a slab laser gain medium module |
CN116544757A (en) * | 2023-06-05 | 2023-08-04 | 齐鲁中科光物理与工程技术研究院 | A laser gain unit packaging structure |
CN118253840B (en) * | 2024-04-17 | 2024-11-15 | 齐鲁中科光物理与工程技术研究院 | A melting welding device for solid laser slab and heat sink and its use method |
CN119328281B (en) * | 2024-12-17 | 2025-07-18 | 齐鲁中科光物理与工程技术研究院 | A novel method for welding crystal strips and discs |
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CN105576482B (en) * | 2016-03-09 | 2018-07-03 | 中国工程物理研究院应用电子学研究所 | A kind of Longitudinal chiller system for laser crystal |
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CN108321665A (en) * | 2018-03-30 | 2018-07-24 | 中国工程物理研究院应用电子学研究所 | A kind of encapsulating structure inhibiting lath and Static wavefront distortion after cooler welding |
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