CN109343166B - Micro-polarizer array based on multiwall carbon nanotubes and manufacturing method thereof - Google Patents
Micro-polarizer array based on multiwall carbon nanotubes and manufacturing method thereof Download PDFInfo
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Abstract
Description
技术领域Technical Field
本发明涉及偏振态测量领域技术领域,尤其涉及一种基于多壁碳纳米管的微偏振片阵列及其制作方法。The present invention relates to the technical field of polarization state measurement, and in particular to a micro-polarizer array based on multi-walled carbon nanotubes and a manufacturing method thereof.
背景技术Background Art
现有的微偏振阵列大多采用金属线栅的方案,纳米级金属线栅周期,线宽对工艺,设备要求较高,根据偏振需求周期在几十纳米到数微米不等。碳纳米管是一种一维碳纳米材料,具有优异的力学,电学性能。多壁碳纳米管的直径只有2-20纳米左右。相对于传统金属线栅的周期尺寸更小。在沉积有催化剂的基底上,采用化学气相沉积的方法就可以生长出垂直排布的多壁碳纳米管阵列,省去了传统线栅制作复杂,高成本的工艺过程,碳纳米管薄膜的厚度决定了偏振片的消光比,5微米厚度的顺排多壁碳纳米管薄膜对可见光波段的消光比约为30分贝。Most of the existing micro-polarization arrays use metal wire grid solutions. The nanoscale metal wire grid period and line width have high requirements on process and equipment. The period ranges from tens of nanometers to several microns according to the polarization requirements. Carbon nanotubes are a one-dimensional carbon nanomaterial with excellent mechanical and electrical properties. The diameter of multi-walled carbon nanotubes is only about 2-20 nanometers. Compared with the period size of traditional metal wire grids, it is smaller. On a substrate deposited with a catalyst, a vertically arranged multi-walled carbon nanotube array can be grown by chemical vapor deposition, eliminating the complex and high-cost process of traditional wire grid production. The thickness of the carbon nanotube film determines the extinction ratio of the polarizer. The extinction ratio of a 5-micron thick straight-arranged multi-walled carbon nanotube film in the visible light band is about 30 decibels.
在中国发明专利CN101893731A中,张青川等人提出了一种基于像素偏振片阵列的实时偏振态和相位测量方法,详细叙述了偏振片阵列的测量方法、结构设计、工作原理等,但该专利并未涉及微偏振阵列的制作这一技术问题。In Chinese invention patent CN101893731A, Zhang Qingchuan et al. proposed a real-time polarization state and phase measurement method based on a pixel polarizer array, and described in detail the measurement method, structural design, working principle, etc. of the polarizer array. However, the patent did not involve the technical issue of the production of a micro-polarization array.
在中国发明专利CN103760681A中,董凤良等提出了一种金属纳米光栅的微偏振片阵列的制作方法。包括在光学玻璃上沉积一层金属膜,构成光栅基体,膜厚约为150-250纳米;在基体表面旋涂正性电子束光刻胶层并干燥处理,在光刻胶层上通过电子束光刻的方法显影得到光刻胶图案;采用电感耦合等离子体刻蚀,以带有图案的光刻胶为掩膜,刻蚀金属薄膜层,以将图形转移到金属薄膜上。电子束光刻的方法效率偏低,对设备要求较高,只适于单件制作,不能用于大批量制作。In Chinese invention patent CN103760681A, Dong Fengliang et al. proposed a method for making a micro-polarizer array of metal nano-gratings. The method includes depositing a metal film on optical glass to form a grating substrate, with a film thickness of about 150-250 nanometers; spin-coating a positive electron beam photoresist layer on the substrate surface and drying it, developing the photoresist layer by electron beam lithography to obtain a photoresist pattern; using inductively coupled plasma etching, using the photoresist with the pattern as a mask, etching the metal film layer to transfer the pattern to the metal film. The electron beam lithography method has low efficiency and high requirements for equipment. It is only suitable for single-piece production and cannot be used for mass production.
发明内容Summary of the invention
(一)要解决的技术问题1. Technical issues to be resolved
本发明的目的在于提供一种基于多壁碳纳米管的微偏振片阵列及其制作方法,以至少部分解决上述技术问题。The object of the present invention is to provide a micro-polarizer array based on multi-walled carbon nanotubes and a manufacturing method thereof, so as to at least partially solve the above technical problems.
(二)技术方案(II) Technical solution
根据本发明的一方面,提供一种基于多壁碳纳米管的微偏振片阵列的制作方法,包括:According to one aspect of the present invention, there is provided a method for manufacturing a micro-polarizer array based on multi-walled carbon nanotubes, comprising:
制作催化剂阵列;making a catalyst array;
在催化剂阵列上生长片状多壁碳纳米管阵列;growing a sheet-like multi-walled carbon nanotube array on a catalyst array;
将所述片状多壁碳纳米管阵列放倒在基底上,形成多壁碳纳米管薄膜阵列;placing the sheet-like multi-walled carbon nanotube array on a substrate to form a multi-walled carbon nanotube film array;
刻蚀所述多壁碳纳米管薄膜阵列,得到一个方向的微偏振片阵列;Etching the multi-walled carbon nanotube film array to obtain a micro-polarizer array in one direction;
重复上述操作,分别制作四个方向的偏振片阵列。Repeat the above steps to make polarizer arrays in four directions respectively.
在进一步的实施方案中,所述制作催化剂阵列包括:In a further embodiment, the making of the catalyst array comprises:
在基底上形成缓冲层并干燥处理;forming a buffer layer on a substrate and performing a drying process;
在所述缓冲层上旋涂光刻胶层并干燥处理;Spin coating a photoresist layer on the buffer layer and drying the layer;
在所述光刻胶层上,覆盖掩膜版,曝光并显影得到催化剂阵列图形;Covering the photoresist layer with a mask, exposing and developing to obtain a catalyst array pattern;
在所述阵列图形上形成催化剂层;forming a catalyst layer on the array pattern;
去除所述光刻胶层,得到催化剂阵列。The photoresist layer is removed to obtain a catalyst array.
在进一步的实施方案中,所述形成催化剂层为:通过溅射工艺或者电子束蒸发工艺在所述光刻胶图形阵列上镀一层铁薄膜层。In a further embodiment, the forming of the catalyst layer is: coating a layer of iron film on the photoresist pattern array by a sputtering process or an electron beam evaporation process.
在进一步的实施方案中,所述将所述片状多壁碳纳米管阵列放倒在基底上包括:将所述片状多壁碳纳米管阵列浸入有机溶剂,提出后干燥处理。In a further embodiment, placing the sheet-like multi-walled carbon nanotube array on a substrate comprises: immersing the sheet-like multi-walled carbon nanotube array in an organic solvent, removing the solvent and then performing a drying process.
在进一步的实施方案中,所述浸入有机溶剂为:将片状多壁碳纳米管薄膜沿与水平面平行方向浸入异丙醇或乙醇有机溶剂中,并沿原方向提出;所述干燥处理为:在温度为80-100℃热板上或烘箱内烘烤5-10分钟。In a further embodiment, the immersion in an organic solvent is: immersing the sheet-like multi-walled carbon nanotube film in an isopropanol or ethanol organic solvent in a direction parallel to the horizontal plane, and pulling it out along the original direction; the drying treatment is: baking on a hot plate at a temperature of 80-100°C or in an oven for 5-10 minutes.
在进一步的实施方案中,所述刻蚀所述多壁碳纳米管薄膜阵列包括:In a further embodiment, etching the multi-walled carbon nanotube film array comprises:
在所述多壁碳纳米管薄膜阵列上旋涂光刻胶层并干燥处理;Spin coating a photoresist layer on the multi-walled carbon nanotube film array and drying the layer;
在所述光刻胶层上,覆盖掩膜版,曝光并显影得到光刻胶微偏振片阵列图形;Covering the photoresist layer with a mask, exposing and developing to obtain a photoresist micro-polarizer array pattern;
刻蚀所述多壁碳纳米管薄膜阵列,以将所述图形转移到多壁碳纳米管薄膜层;Etching the multi-walled carbon nanotube film array to transfer the pattern to the multi-walled carbon nanotube film layer;
去除所述光刻胶。The photoresist is removed.
在进一步的实施方案中,所述生长片状多壁碳纳米管阵列为使用水辅助化学气相沉积法生长形成顺序排布的多壁碳纳米管阵列。In a further embodiment, the growing sheet-like multi-walled carbon nanotube array is a multi-walled carbon nanotube array that is sequentially arranged by growing using a water-assisted chemical vapor deposition method.
在进一步的实施方案中,所述生长多壁碳纳米管阵列时,通入气体包括:氩气、氢气、乙烯、湿氩气;或者,通入气体包括:氩气、氢气、乙炔和湿氩气。In a further embodiment, when growing the multi-walled carbon nanotube array, the gases introduced include: argon, hydrogen, ethylene, wet argon; or, the gases introduced include: argon, hydrogen, acetylene and wet argon.
在进一步的实施方案中,所述分别制作四个方向的偏振片阵列包括:分别制作0°、45°、90°、135°四个方向的偏振片阵列。In a further embodiment, the manufacturing of polarizer arrays in four directions includes: manufacturing polarizer arrays in four directions of 0°, 45°, 90°, and 135°.
根据本发明的另一方面,提供一种基于多壁碳纳米管的微偏振片阵列,包括:According to another aspect of the present invention, there is provided a micro-polarizer array based on multi-walled carbon nanotubes, comprising:
一个或多个偏振片单元,且各偏振片单元包括4个不同方向的偏振片;其中,所述偏振片材料为多壁碳纳米管。One or more polarizer units, each polarizer unit includes four polarizers in different directions; wherein the polarizer material is multi-walled carbon nanotubes.
在进一步的实施方案中,所述基于多壁碳纳米管的微偏振片阵列还包括:In a further embodiment, the multi-walled carbon nanotube-based micro-polarizer array further comprises:
基底;substrate;
缓冲层,沉积在所述基底上;a buffer layer deposited on the substrate;
图形化催化剂层,沉积在所述缓冲层上;其中,所述催化剂层图形与偏振片图形相同,且所述微偏振生长在所述催化剂层上。A patterned catalyst layer is deposited on the buffer layer; wherein the pattern of the catalyst layer is the same as the pattern of the polarizer, and the micro-polarization is grown on the catalyst layer.
在进一步的实施方案中,所述偏振片单元为0°、45°、90°、135°四个方向偏振片,且沿顺时针依次排列形成2*2阵列。In a further embodiment, the polarizer units are polarizers in four directions: 0°, 45°, 90°, and 135°, and are arranged in sequence clockwise to form a 2*2 array.
在进一步的实施方案中,所述多壁碳纳米管为顺序排布的多壁碳纳米管。In a further embodiment, the multi-walled carbon nanotubes are sequentially arranged multi-walled carbon nanotubes.
(三)有益效果(III) Beneficial effects
本发明提供的一种基于多壁碳纳米管的微偏振片阵列及其制作方法至少包括以下有益效果:The present invention provides a multi-walled carbon nanotube-based micro-polarizer array and a method for manufacturing the same, which have at least the following beneficial effects:
本发明制作微偏振片阵列使用的材料为碳纳米管,碳纳米管作为一维纳米材料,重量轻,机械强度高,六边形结构连接完美,拥有优良的延展性、柔韧性、透明性、耐腐蚀性,优良的电磁波吸收特性。The material used in the micro-polarizer array of the present invention is carbon nanotubes. As a one-dimensional nanomaterial, carbon nanotubes are light in weight, high in mechanical strength, have perfect hexagonal structure connection, and have excellent ductility, flexibility, transparency, corrosion resistance, and excellent electromagnetic wave absorption characteristics.
顺序排布的多壁碳纳米管轴向与垂直轴向表现出明显的光、电各向异性的特性。顺序排布的多壁碳纳米管阵列能吸收平行于轴向的光波,透过垂直于轴向的光波。碳纳米管顺排阵列会吸收极化方向与其轴向一致的光波,碳纳米管中的自由电子沿着轴向运动。当入射光的极化方向与轴向一致时,碳纳米管中的电子随着光子电场方向振动,使光子能量转移到多壁碳纳米管中的电子上,最终以热量的形式耗散在碳纳米管晶格结构中。利用顺排碳纳米管薄膜的偏振特性,将其制作成微偏振单元可以有效解决现有工艺复杂,成本高,效率低的问题。Sequentially arranged multi-walled carbon nanotubes show obvious optical and electrical anisotropy characteristics in the axial and perpendicular directions. Sequentially arranged multi-walled carbon nanotube arrays can absorb light waves parallel to the axial direction and transmit light waves perpendicular to the axial direction. The axially arranged carbon nanotube array absorbs light waves whose polarization direction is consistent with its axial direction, and the free electrons in the carbon nanotubes move along the axial direction. When the polarization direction of the incident light is consistent with the axial direction, the electrons in the carbon nanotubes vibrate in the direction of the photon electric field, so that the photon energy is transferred to the electrons in the multi-walled carbon nanotubes, and finally dissipated in the form of heat in the carbon nanotube lattice structure. Utilizing the polarization characteristics of the axially arranged carbon nanotube film and making it into a micro-polarization unit can effectively solve the problems of complex existing processes, high costs, and low efficiency.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明实施例的催化剂阵列0°掩膜版示意图(其他四个角度膜板单元仅方向角度不同,单元结构尺寸一致);FIG1 is a schematic diagram of a 0° mask plate of a catalyst array according to an embodiment of the present invention (the other four angled mask plate units only have different direction angles, and the unit structure dimensions are consistent);
图2为本发明实施例的四个方向偏振片阵列制作过程示意图;FIG2 is a schematic diagram of a process for manufacturing a four-directional polarizer array according to an embodiment of the present invention;
图3为本发明实施例的多壁碳纳米管阵列0°掩膜版示意图(其他四个角度膜板单元位置不同,单元结构尺寸一致);3 is a schematic diagram of a 0° mask plate of a multi-walled carbon nanotube array according to an embodiment of the present invention (the positions of the mask plates at the other four angles are different, but the unit structure sizes are the same);
图4为本发明实施例的单次循环制作工艺流程图,(其中4e之后的步骤样品上仍存在催化剂层,只是其厚度为1-2纳米,相对于其他层可忽略,故不再图中表示);FIG4 is a single-cycle manufacturing process flow chart of an embodiment of the present invention (wherein the catalyst layer still exists on the sample after step 4e, but its thickness is 1-2 nanometers, which is negligible compared with other layers and is not shown in the figure);
图5为本发明实施例的片状多壁碳纳米管致密化放倒过程示意图;FIG5 is a schematic diagram of a densification process of a sheet-like multi-walled carbon nanotube according to an embodiment of the present invention;
图6为本发明实施例的基于多壁碳纳米管的微偏振片阵列的制作流程图;FIG6 is a flowchart of manufacturing a micro-polarizer array based on multi-walled carbon nanotubes according to an embodiment of the present invention;
图7为本发明实施例的基于多壁碳纳米管的微偏振片阵列的多壁碳纳米管水辅助化学气相沉积生长过程图。FIG. 7 is a diagram showing the growth process of multi-walled carbon nanotubes based on a multi-walled carbon nanotube micro-polarizer array according to an embodiment of the present invention.
具体实施方式DETAILED DESCRIPTION
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明作进一步的详细说明。In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
根据本发明的一个实施例,提供一种基于多壁碳纳米管的微偏振片阵列的制作方法,如图5所示,包括:According to one embodiment of the present invention, a method for manufacturing a micro-polarizer array based on multi-walled carbon nanotubes is provided, as shown in FIG5 , comprising:
制作催化剂阵列;making a catalyst array;
在催化剂阵列上生长片状多壁碳纳米管阵列;growing a sheet-like multi-walled carbon nanotube array on a catalyst array;
将所述片状多壁碳纳米管阵列放倒在基底上的形成致密化多壁碳纳米管薄膜阵列;Laying the sheet-like multi-walled carbon nanotube array on a substrate to form a densified multi-walled carbon nanotube film array;
刻蚀所述多壁碳纳米管薄膜阵列,得到其中一个方向的微偏振片阵列;Etching the multi-walled carbon nanotube film array to obtain a micro-polarizer array in one direction;
重复上述操作,制作四个方向的偏振片阵列。Repeat the above steps to make polarizer arrays in four directions.
在本实施例中,所述制作催化剂阵列包括:In this embodiment, the preparation of the catalyst array includes:
在基底上形成缓冲层并干燥处理;forming a buffer layer on a substrate and performing a drying process;
在所述缓冲层上旋涂光刻胶层并干燥处理;Spin coating a photoresist layer on the buffer layer and drying the layer;
在所述光刻胶层上,覆盖掩膜版,曝光并显影得到催化剂阵列图形;Covering the photoresist layer with a mask, exposing and developing to obtain a catalyst array pattern;
在所述阵列图形上形成催化剂层;forming a catalyst layer on the array pattern;
去除所述光刻胶层,得到催化剂阵列。The photoresist layer is removed to obtain a catalyst array.
其中,所述掩膜版为催化剂阵列的掩膜版,共包含四块,分别为0°、45°、90°、135°四个方向的阵列,其矩形单元线宽决定了碳纳米管薄膜放倒后的厚度,从而对微偏振阵列的消光比起到决定性作用。所述掩膜版图案尺寸由所设计的偏振阵列单元尺寸决定,多块掩膜版分别对应多个偏振方向的图形,共0°、45°、90°、135°四个方向。The mask is a mask for the catalyst array, which contains four pieces, namely arrays in four directions of 0°, 45°, 90°, and 135°. The line width of the rectangular unit determines the thickness of the carbon nanotube film after it is laid down, thus playing a decisive role in the extinction ratio of the micro-polarization array. The pattern size of the mask is determined by the size of the designed polarization array unit. Multiple masks correspond to patterns in multiple polarization directions, a total of four directions of 0°, 45°, 90°, and 135°.
其中,所述在基底形成缓冲层为:通过原子层沉积工艺在基底上镀一层氧化铝薄膜,厚度为10-20nm。干燥处理为采用热板或烘箱烘烤,优选的所述烘烤温度为120-220℃,所述烘烤时间为2-60分钟。The buffer layer is formed on the substrate by depositing an aluminum oxide film on the substrate by atomic layer deposition process, with a thickness of 10-20 nm. The drying process is baking on a hot plate or in an oven, preferably at a baking temperature of 120-220° C. and for a baking time of 2-60 minutes.
其中,所述旋涂光刻胶层为在所述氧化铝薄膜上旋涂极紫外光正性光刻胶层并干燥处理。所述光刻胶厚度为0.8-1.6微米,优选为AZ6112。干燥处理为采用热板烘烤,采用AZ6112光刻胶时烘烤温度为100℃,烘烤时间为60秒。The spin-coated photoresist layer is a layer of extreme ultraviolet positive photoresist that is spin-coated on the aluminum oxide film and dried. The thickness of the photoresist is 0.8-1.6 microns, preferably AZ6112. The drying process is hot plate baking, and when AZ6112 photoresist is used, the baking temperature is 100° C. and the baking time is 60 seconds.
其中,在所述光刻胶层上覆盖催化剂阵列掩膜版,曝光并显影得到光刻胶碳纳米管生长阵列图形时,所述掩膜版对应用于四个不同方向中的一块,并在制作下一方向偏振阵列时更换对应的掩膜版。优选的,曝光时间2.3秒,显影时间30秒。Wherein, when the catalyst array mask is covered on the photoresist layer, and the photoresist carbon nanotube growth array pattern is obtained by exposure and development, the mask corresponds to one of the four different directions, and the corresponding mask is replaced when the polarization array in the next direction is produced. Preferably, the exposure time is 2.3 seconds and the development time is 30 seconds.
其中,所述形成催化剂层为:通过溅射工艺或者电子束蒸发工艺在所述光刻胶图形层上镀一层铁薄膜层,根据多壁碳纳米管生长质量要求,所述铁薄膜层厚度为1-2纳米。The catalyst layer is formed by coating an iron film layer on the photoresist pattern layer by sputtering or electron beam evaporation. According to the quality requirements of multi-walled carbon nanotube growth, the thickness of the iron film layer is 1-2 nanometers.
其中,去除所述光刻胶层采用丙酮伴随超声处理去除所述光刻胶层。从而形成催化剂阵列,通过光刻的方法做出矩形的催化剂,便能够通过水辅助化学气相沉积生长出垂直排列的片状的碳纳米管阵列。The photoresist layer is removed by using acetone accompanied by ultrasonic treatment to form a catalyst array. A rectangular catalyst is made by photolithography, and a vertically arranged sheet-like carbon nanotube array can be grown by water-assisted chemical vapor deposition.
在本实施例中,所述生长片状多壁碳纳米管阵列采用水辅助化学气相沉积的方法包括:将镀有催化剂阵列图案的基底放入气相沉积炉的石英管中;密封后通入氩气,升温一定温度后开始通入氢气,温度稳定在一定温度时通入乙烯或乙炔,然后在通入湿氩气;开始生长直到得到足够高度和体积密度的碳纳米管。水辅助化学气相沉积的方法可用于生长垂直排布的多壁碳纳米管阵列。生长在温控炉中进行,开始生长前将带有催化剂的样品放入气相沉积炉中,用于生长碳纳米管阵列的气体包括氩气、氢气、乙烯(乙炔)、湿氩气。计时生长,生长时间决定碳纳米管生长的高度,最高可长至数毫米高度。In this embodiment, the method of growing a sheet-like multi-walled carbon nanotube array using water-assisted chemical vapor deposition includes: placing a substrate coated with a catalyst array pattern into a quartz tube of a vapor deposition furnace; introducing argon after sealing, and starting to introduce hydrogen after heating to a certain temperature, introducing ethylene or acetylene when the temperature stabilizes at a certain temperature, and then introducing wet argon; starting to grow until carbon nanotubes of sufficient height and volume density are obtained. The method of water-assisted chemical vapor deposition can be used to grow a vertically arranged multi-walled carbon nanotube array. The growth is carried out in a temperature-controlled furnace. Before the growth begins, the sample with the catalyst is placed in the vapor deposition furnace. The gases used to grow the carbon nanotube array include argon, hydrogen, ethylene (acetylene), and wet argon. Timed growth, the growth time determines the height of the carbon nanotube growth, and the maximum height can be several millimeters.
在本实施例中,所述将所述片状多壁碳纳米管阵列放倒在基底上包括:按照片状碳纳米管薄膜与水平面平行方向浸入有机溶剂,有机溶剂为异丙醇或乙醇;干燥处理为采用热板烘烤,所述烘烤温度为80-100℃,所述烘烤时间为5-10分钟;从而得到放倒在基底上的致密化多壁碳纳米管薄膜阵列,放倒后顺排方向由生长阵列方向决定。其中,本实施例中所述放倒为垂直于基地生长的多壁碳纳米管沿一定方向倒下至于基底处于平行方向。In this embodiment, the step of laying the sheet-like multi-walled carbon nanotube array on the substrate includes: immersing the sheet-like carbon nanotube film in an organic solvent in a direction parallel to the horizontal plane, the organic solvent being isopropanol or ethanol; drying treatment is baking on a hot plate, the baking temperature is 80-100°C, and the baking time is 5-10 minutes; thereby obtaining a densified multi-walled carbon nanotube film array laid on the substrate, and the arrangement direction after laying is determined by the growth array direction. Among them, the laying in this embodiment is that the multi-walled carbon nanotubes grown perpendicular to the base are laid down in a certain direction so as to be parallel to the base.
碳纳米管阵列在水中不浸润,在有机溶剂中浸润,将得到的片状碳纳米管阵列浸入有机溶剂可以将碳纳米管阵列放倒,密实化,同时保持阵列顺序排布的特征。放倒方向与从有机溶剂中提出的方向一致,也可将图案做成梯形,实现对碳纳米管倾倒的导向。密实化的顺排碳纳米管薄膜体积分数可以从1%收缩至50%。放倒后的密实化多壁碳纳米管阵列薄膜,通过光刻技术在其需要保留的图案区域表面覆盖一层光刻胶作为掩膜。用反应离子刻蚀刻蚀掉光刻胶图案没有覆盖的区域。洗去残胶,便可得到放倒方向的偏振片阵列。The carbon nanotube array does not wet in water, but soaks in an organic solvent. The obtained sheet-like carbon nanotube array is immersed in an organic solvent, which can lay the carbon nanotube array down and densify it, while maintaining the characteristics of the array's sequential arrangement. The laying direction is consistent with the direction from the organic solvent, and the pattern can also be made into a trapezoid to guide the carbon nanotubes to fall. The volume fraction of the densified straight-arranged carbon nanotube film can be shrunk from 1% to 50%. After laying down, the densified multi-walled carbon nanotube array film is covered with a layer of photoresist as a mask on the surface of the pattern area that needs to be retained through photolithography technology. Reactive ion etching is used to etch away the area not covered by the photoresist pattern. After washing away the residual glue, a polarizer array in the laying direction can be obtained.
在本实施例中,所述刻蚀所述多壁碳纳米管薄膜阵列包括:In this embodiment, etching the multi-walled carbon nanotube film array includes:
在所述多壁碳纳米管薄膜阵列上旋涂光刻胶层并干燥处理;Spin coating a photoresist layer on the multi-walled carbon nanotube film array and drying the layer;
在所述光刻胶层上,覆盖掩膜版,曝光并显影得到光刻胶微偏振片阵列图形;Covering the photoresist layer with a mask, exposing and developing to obtain a photoresist micro-polarizer array pattern;
刻蚀所述多壁碳纳米管薄膜阵列,以将所述图形转移到多壁碳纳米管薄膜层;Etching the multi-walled carbon nanotube film array to transfer the pattern to the multi-walled carbon nanotube film layer;
去除所述光刻胶。The photoresist is removed.
其中,所述多壁碳纳米管薄膜阵列上旋涂光刻胶层,所述光刻胶层为极紫外光刻胶,其厚度为6-10微米,优选为AZ4620,所述烘烤温度为100℃,所述烘烤时间为360秒。Wherein, a photoresist layer is spin-coated on the multi-walled carbon nanotube film array, the photoresist layer is extreme ultraviolet photoresist, the thickness of which is 6-10 microns, preferably AZ4620, the baking temperature is 100° C., and the baking time is 360 seconds.
其中,所述掩膜版为多壁碳纳米管阵列的掩膜版,其每次所使用的掩膜版应分别与当次使用的催化剂阵列的掩膜版相对应。选用AZ4620时,曝光时间25秒,显影时间3-5分钟,显影后使用氮气将样品吹干。The mask is a mask of a multi-walled carbon nanotube array, and the mask used each time should correspond to the mask of the catalyst array used at that time. When AZ4620 is selected, the exposure time is 25 seconds, the development time is 3-5 minutes, and the sample is blown dry with nitrogen after development.
其中,所述刻蚀所述多壁碳纳米管薄膜阵列采用反应离子刻蚀,以带有所述图形的光刻胶层为掩膜,刻蚀所述多壁碳纳米管薄膜阵列,以将所述图形转移到多壁碳纳米管薄膜层。优选的,反应气体为氧气,流量为10sccm,功率200W。The etching of the multi-walled carbon nanotube film array is carried out by reactive ion etching, using the photoresist layer with the pattern as a mask to etch the multi-walled carbon nanotube film array to transfer the pattern to the multi-walled carbon nanotube film layer. Preferably, the reaction gas is oxygen with a flow rate of 10 sccm and a power of 200W.
其中,所述去除所述光刻胶为使用丙酮去除残胶,从而得到一个方向的微偏振片阵列。The removing of the photoresist is to use acetone to remove the residual photoresist, thereby obtaining a micro-polarizer array in one direction.
在本实施例中,所述分别制作四个方向的偏振片阵列包括:分别制作0°、45°、90°、135°四个方向的偏振片阵列。如图2所示为四个方向偏振片阵列制作过程示意图,其中图2a为第一次循环制作0°微偏振子阵列;图2b为第二次循环制作45°微偏振子阵列;图2c为第三次循环制作90°微偏振子阵列;图2d为第四次循环制作135°微偏振子阵列。In this embodiment, the manufacturing of polarizer arrays in four directions includes: manufacturing polarizer arrays in four directions of 0°, 45°, 90°, and 135°. FIG2 is a schematic diagram of the manufacturing process of polarizer arrays in four directions, wherein FIG2a is the manufacturing of a 0° micro-polarization subarray in the first cycle; FIG2b is the manufacturing of a 45° micro-polarization subarray in the second cycle; FIG2c is the manufacturing of a 90° micro-polarization subarray in the third cycle; and FIG2d is the manufacturing of a 135° micro-polarization subarray in the fourth cycle.
根据本发明的另一个实施例,提供一种基于多壁碳纳米管的微偏振片阵列,包括:According to another embodiment of the present invention, there is provided a micro-polarizer array based on multi-walled carbon nanotubes, comprising:
一个或多个偏振片单元,且各偏振片单元包括4个不同方向的偏振片;其中,所述偏振片材料为多壁碳纳米管。One or more polarizer units, each polarizer unit includes four polarizers in different directions; wherein the polarizer material is multi-walled carbon nanotubes.
在本实施例中,所述基于多壁碳纳米管的微偏振片阵列还包括:In this embodiment, the multi-walled carbon nanotube-based micro-polarizer array further includes:
基底;substrate;
缓冲层,沉积在所述基底上;a buffer layer deposited on the substrate;
图形化催化剂层,沉积在所述缓冲层上;其中,所述催化剂层图形与偏振片图形相同,且所述微偏振生长在所述催化剂层上。A patterned catalyst layer is deposited on the buffer layer; wherein the pattern of the catalyst layer is the same as the pattern of the polarizer, and the micro-polarization is grown on the catalyst layer.
在本实施例中,所述基底为透明材料,所述透明材料可以为但不局限于玻璃基底或二氧化硅基底。In this embodiment, the substrate is a transparent material, which may be, but is not limited to, a glass substrate or a silicon dioxide substrate.
在本实施例中,所述缓冲层可以为但不局限于氧化铝层,根据碳纳米管生长质量要求其厚度为10-20nm之间。In this embodiment, the buffer layer may be, but is not limited to, an aluminum oxide layer, and its thickness is between 10-20 nm according to the quality requirements of carbon nanotube growth.
在本实施例中,所述图形化催化剂层可以为一层铁膜,厚度为1-2nm之间,厚度可忽略不计,故在附图中省略。In this embodiment, the patterned catalyst layer may be a layer of iron film with a thickness of 1-2 nm. The thickness is negligible and is therefore omitted in the drawings.
在本实施例中,所述偏振片单元为0°、45°、90°、135°四个方向偏振片,且沿顺时针依次排列形成2*2阵列。In this embodiment, the polarizer units are polarizers in four directions: 0°, 45°, 90°, and 135°, and are arranged in sequence clockwise to form a 2*2 array.
在本实施例中,所述多壁碳纳米管为顺序排布的多壁碳纳米管。In this embodiment, the multi-walled carbon nanotubes are multi-walled carbon nanotubes arranged in sequence.
碳纳米管作为一维纳米材料,重量轻,机械强度高,六边形结构连接完美,拥有优良的延展性、柔韧性、透明性、耐腐蚀性,优良的电磁波吸收特性。而顺序排布的多壁碳纳米管轴向与垂直轴向表现出明显的光、电各向异性的特性。As a one-dimensional nanomaterial, carbon nanotubes are light in weight, high in mechanical strength, with perfect hexagonal structure connection, excellent ductility, flexibility, transparency, corrosion resistance, and excellent electromagnetic wave absorption properties. The sequentially arranged multi-walled carbon nanotubes show obvious optical and electrical anisotropy in the axial and vertical axes.
下面通过一个示例性实施例对本发明进一步说明,其中制备方法包括:The present invention is further described below by an exemplary embodiment, wherein the preparation method comprises:
步骤1:利用无掩模光刻机,制作四个方向的催化剂阵列的掩膜版,如图1所示为催化剂阵列0°掩膜版示意图,其中,阴影部分透光,单元宽度6微米,间距100微米,另外三块掩膜版,矩形单元长度方向分别沿着45°、90°、135°三个方向。以及多壁碳纳米管阵列的掩膜版,如图3所示为多壁碳纳米管阵列0°掩膜版示意图,其中,阴影部分透光,单元为5微米×5微米,间距8微米,另外三个方向用于刻蚀形成多壁碳纳米管阵列的掩膜版,微偏振单元尺寸一致,布局与图2一致。Step 1: Use a maskless lithography machine to make masks for catalyst arrays in four directions. Figure 1 shows a schematic diagram of a catalyst array 0° mask, where the shaded part is transparent, the unit width is 6 microns, and the spacing is 100 microns. For the other three masks, the length directions of the rectangular units are along the directions of 45°, 90°, and 135°. And a mask for a multi-walled carbon nanotube array, as shown in Figure 3, which is a schematic diagram of a multi-walled carbon nanotube array 0° mask, where the shaded part is transparent, the unit is 5 microns × 5 microns, and the spacing is 8 microns. The other three directions are used to etch the mask to form a multi-walled carbon nanotube array. The micro-polarization unit size is consistent, and the layout is consistent with Figure 2.
步骤2:如图4a所示,采用原子层沉积技术,在清洗干净的二氧化硅基底1上沉积10纳米厚的氧化铝薄膜层2。Step 2: As shown in FIG. 4 a , an aluminum oxide thin film layer 2 having a thickness of 10 nanometers is deposited on a cleaned silicon dioxide substrate 1 using an atomic layer deposition technique.
步骤3:如图4b所示,使用氮气吹去样品表面灰尘,旋涂AZ6112正性极紫外第一光刻胶3,曝光显影后形成碳纳米管生长的光刻胶图形,放置在100℃热板上烘烤60秒。其中,考虑铁催化剂4lift off及图案效果,光刻胶厚度应在1微米左右。其中,每次循环更换不同角度催化剂阵列掩膜版,直到四个角度全部完成。Step 3: As shown in Figure 4b, use nitrogen to blow away dust on the sample surface, spin-coat AZ6112 positive extreme ultraviolet first photoresist 3, and form a photoresist pattern for carbon nanotube growth after exposure and development, and bake it on a 100°C hot plate for 60 seconds. Considering the iron catalyst 4 lift off and pattern effect, the photoresist thickness should be about 1 micron. In each cycle, the catalyst array mask with different angles is replaced until all four angles are completed.
步骤4:如图4c所示,采用磁控溅射技术在有光刻胶图形的样品表面溅射一层1.5纳米铁催化剂4。之后,使用丙酮伴随超声清洗1-2分钟去除胶图形及在光刻胶图形之上的铁,清洗干净后利用氮气风干样品,得到的样品如图4d所示。Step 4: As shown in FIG4c, a layer of 1.5 nanometer iron catalyst 4 is sputtered on the surface of the sample with the photoresist pattern using magnetron sputtering technology. After that, acetone is used to clean with ultrasonic cleaning for 1-2 minutes to remove the resist pattern and the iron on the photoresist pattern. After cleaning, the sample is dried with nitrogen gas, and the obtained sample is shown in FIG4d.
步骤5:采用水辅助化学气相沉积的方法生长碳纳米管5阵列。将镀有催化剂阵列图案的硅基底放入气相沉积炉的石英管中(内径180mm),密封后通入氩气,流量为90sccm;升温至550℃开始通入氢气,流量为50sccm;温度稳定在760℃时通入乙烯,流量为80sccm,湿氩气,流量9sccm;开始计时生长,碳纳米管生长高度由生长时间决定,生长15分钟得到的碳纳米管高度约为400微米,体积密度约为1%。其生长过程如图7所示,生长出的碳纳米管片状阵列样品如图4e所示。Step 5: Grow carbon nanotube 5 array by water-assisted chemical vapor deposition. Put the silicon substrate coated with the catalyst array pattern into the quartz tube (inner diameter 180mm) of the vapor deposition furnace, seal it, and introduce argon gas with a flow rate of 90sccm; heat it to 550℃ and start introducing hydrogen with a flow rate of 50sccm; when the temperature is stable at 760℃, introduce ethylene with a flow rate of 80sccm and wet argon with a flow rate of 9sccm; start timing growth, the growth height of carbon nanotubes is determined by the growth time, and the height of carbon nanotubes obtained after 15 minutes of growth is about 400 microns, and the volume density is about 1%. The growth process is shown in Figure 7, and the grown carbon nanotube sheet array sample is shown in Figure 4e.
步骤6:放倒片状碳纳米管顺排阵列,使其致密化。如图5所示,保持片状碳纳米管与水平面持平,将片状碳纳米管片状阵列样品浸入异丙醇中,保持数秒后沿浸入方向提出,提出后放置在80℃上烘烤10-20分钟,得到放倒在基底上的致密化顺排碳纳米管薄膜。Step 6: Lay down the carbon nanotube array to densify it. As shown in Figure 5, keep the carbon nanotube sheet level with the horizontal plane, immerse the carbon nanotube sheet array sample in isopropanol, keep it for a few seconds and then take it out along the immersion direction, and then bake it at 80°C for 10-20 minutes to obtain a densified carbon nanotube film laid down on the substrate.
步骤7:如图4g所示,使用氮气吹去样品表面灰尘,旋涂AZ4620正性极紫外第二光刻胶6,曝光显影后形成碳纳米管生长的光刻胶图形,放置在100℃热板上烘烤360秒。其中,碳纳米管刻蚀与光刻胶选择比,光刻胶厚度应在6微米以上。其中,每次循环更换不同角度刻蚀多壁碳纳米管阵列掩膜版,直到四个角度全部完成。Step 7: As shown in Figure 4g, use nitrogen to blow away dust on the sample surface, spin-coat AZ4620 positive extreme ultraviolet second photoresist 6, and form a photoresist pattern for carbon nanotube growth after exposure and development, and place it on a 100°C hot plate for baking for 360 seconds. Among them, the carbon nanotube etching and photoresist selection ratio, the photoresist thickness should be above 6 microns. Among them, the multi-walled carbon nanotube array mask is changed at different angles for each cycle until all four angles are completed.
步骤8:如图4h所示,采用反应离子刻蚀技术刻蚀密实化顺排碳纳米管薄膜,功率200W,氧气流量10sccm。Step 8: As shown in FIG. 4h , the densified aligned carbon nanotube film is etched using reactive ion etching technology, with a power of 200 W and an oxygen flow rate of 10 sccm.
步骤9:如图4i所示,使用丙酮清洗去除刻蚀后样品表面的残胶,清洗干净后用氮气吹干,得到其中一个方向的微偏振阵列。Step 9: As shown in FIG4i , acetone is used to clean and remove the residual glue on the surface of the sample after etching. After cleaning, it is blown dry with nitrogen to obtain a micro-polarization array in one direction.
步骤10:如图2所示。分四次循环完成微偏振阵列全部0°、45°、90°、135°四个角度的制作。Step 10: As shown in Figure 2, the production of the micro-polarization array at all four angles of 0°, 45°, 90°, and 135° is completed in four cycles.
最终得到各阵列单元为2*2多壁碳纳米管偏振片单元,且各偏振片单元为0°、45°、90°、135°四个不同方向偏振片的沿顺时针依次排列的多壁碳纳米管的微偏振片阵列,其俯视图如图2d所示。Finally, each array unit is a 2*2 multi-walled carbon nanotube polarizer unit, and each polarizer unit is a multi-walled carbon nanotube micro-polarizer array arranged in clockwise order with polarizers in four different directions of 0°, 45°, 90°, and 135°. Its top view is shown in Figure 2d.
需要说明的是,本文可提供包含特定值的参数的示范,但这些参数无需确切等于相应的值,而是可在可接受的误差容限或设计约束内近似于相应值。实施例中提到的方向用语,例如“上”、“下”、“前”、“后”、“左”、“右”等,仅是参考附图的方向,并非用来限制本发明的保护范围。此外,除非特别描述或必须依序发生的步骤,上述步骤的顺序并无限制于以上所列,且可根据所需设计而变化或重新安排。并且上述实施例可基于设计及可靠度的考虑,彼此混合搭配使用或与其他实施例混合搭配使用,即不同实施例中的技术特征可以自由组合形成更多的实施例。It should be noted that this document may provide demonstrations of parameters containing specific values, but these parameters do not need to be exactly equal to the corresponding values, but can be approximated to the corresponding values within an acceptable error tolerance or design constraint. The directional terms mentioned in the embodiments, such as "up", "down", "front", "back", "left", "right", etc., are only reference directions of the accompanying drawings and are not intended to limit the scope of protection of the present invention. In addition, unless the steps are specifically described or must occur in sequence, the order of the above steps is not limited to those listed above, and can be changed or rearranged according to the desired design. In addition, the above embodiments can be mixed and matched with each other or with other embodiments based on design and reliability considerations, that is, the technical features in different embodiments can be freely combined to form more embodiments.
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
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