CN109326959A - A kind of two-wavelength semiconductor laser chip structure - Google Patents
A kind of two-wavelength semiconductor laser chip structure Download PDFInfo
- Publication number
- CN109326959A CN109326959A CN201710644176.4A CN201710644176A CN109326959A CN 109326959 A CN109326959 A CN 109326959A CN 201710644176 A CN201710644176 A CN 201710644176A CN 109326959 A CN109326959 A CN 109326959A
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- luminous zone
- epitaxial wafer
- bar shaped
- flute profile
- semiconductor laser
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 230000003447 ipsilateral effect Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 4
- 230000009977 dual effect Effects 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 230000004297 night vision Effects 0.000 abstract description 3
- 238000003780 insertion Methods 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract description 2
- 238000011161 development Methods 0.000 description 5
- 239000003814 drug Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002647 laser therapy Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
A kind of two-wavelength semiconductor laser chip structure, comprising: epitaxial wafer I, lower end surface are provided with the bar shaped luminous zone of outwardly convex, and the width of bar shaped luminous zone is 3-4 μm；And epitaxial wafer II, end face is provided with the flute profile luminous zone being recessed inwardly thereon, and the width of flute profile luminous zone is 8-10 μm；I lower end surface of epitaxial wafer and the upper surface of epitaxial wafer II are adhesively fixed, and the bar shaped luminous zone is plugged in corresponding flute profile luminous zone.Epitaxial wafer I and epitaxial wafer II are bonded by adhesion technique, simultaneously in the flute profile luminous zone on the bar shaped luminous zone insertion epitaxial wafer II on epitaxial wafer I, to form the characteristic that a chip of laser is emitted two kinds of wavelength lasers simultaneously, its manufacturing process is simple, can sufficiently be applied to dual laser medical field and night vision rifle takes aim at field.Due to not needing the optical lens using light coupling technology and complexity, the manufacturing cost of two-wavelength semiconductor laser is greatly reduced.
Description
Technical field
The present invention relates to field of semiconductor lasers, and in particular to a kind of two-wavelength semiconductor laser chip structure.
Background technique
Semiconductor laser has many advantages, such as that high efficiency, the long-life, beam quality is high, stability is good, compact-sized, extensively
For fiber optic communication, laser pump (ing), medical instrument, ordnance rifle taken aim at, the fields such as laser printer.Since laser is born, swash
Light technology has been the effective means of clinical treatment, is also developing progressively the key technology for medical diagnosis, and solve in medicine
Many problems, be made that contribution for the development of medicine.Currently, laser medicine has formed a maturation, stable market, and
Persistently powerful growth momentum is all remain in aspects such as its basic research, new technology development, new equipment development and productions.Two
During the last ten years, the development of semiconductor laser is with rapid changepl. never-ending changes and improvements, it is small in size, is moved, and easily maintenance and installation environment are lower, and
And recently as the continuous improvement of its output power, the expansion of wave-length coverage has become the strong of other type lasers
Rival, and have part replace He-Ne, the trend of other lasers such as CO2, optical quality is continuous with the development of technology
It improves, the application of semiconductor laser medically will gradually occupy mainstream.
Medically application is divided into laser diagnostics and laser therapy (containing laser beautifying) two major classes to laser technology, the former is to swash
Light is as information carrier, and the latter is using laser as energy carrier.The medical treatment aspect that different wave length, various forms of laser are good at
It is different.In laser treatment appliance, the general laser there are two types of wavelength is existed simultaneously, it is seen that light such as feux rouges is as therapentic part
Target indication, other wavelength such as 808nm, 980nm etc. as treatment laser.
Laser gun takes aim at that market is increasingly mature in recent years, and especially gradually the attention to night fighting system, night use are red for various countries
Outer laser sight, daytime use visible laser sighting device, it is desirable that two kinds of various lasers are assembled into the same sighting device.
Application for present dual laser is received, and current way is by 650nm laser and 808nm laser
It is encapsulated into laser shell, then is coupled the laser of two kinds of wavelength together respectively with fiber coupling technique；Another kind be by
The laser of two kinds of wavelength uses the method for complicated optical lens combination use space conjunction beam by the light of two kinds of laser emittings
It is coupled together.Both the above method substantially increases product cost, complex process, especially in middle low power laser application
Occasion does not have cost advantage.
Summary of the invention
To overcome the above deficiencies, the invention provides an a kind of chips can go out two kinds of wavelength lasers simultaneously
And the two-wavelength semiconductor laser chip structure that manufacturing cost is low.
The present invention overcomes the technical solution used by its technical problem to be:
A kind of two-wavelength semiconductor laser chip structure, comprising:
Epitaxial wafer I, lower end surface are provided with the bar shaped luminous zone of outwardly convex, and the width of the bar shaped luminous zone is 3-4；
And
Epitaxial wafer II, end face is provided with the flute profile luminous zone being recessed inwardly thereon, and the width of the flute profile luminous zone is 8-10；
The depth of the flute profile luminous zone and the height of bar shaped luminous zone match, I lower end surface of epitaxial wafer and epitaxial wafer II
Upper surface be adhesively fixed, the bar shaped luminous zone is plugged in corresponding flute profile luminous zone.
It further include the deep trouth in notch shape for being set to II outboard end of epitaxial wafer, the epitaxial wafer I to share positive electrode
Upper surface is provided with the negative electrode I be connected with bar shaped luminous zone, and II lower end surface of epitaxial wafer is provided with leads with flute profile luminous zone
Logical negative electrode II, the upper surface of the deep trouth are provided with the positive electrode being respectively turned on bar shaped luminous zone and flute profile luminous zone.
In order to improve heat dissipation performance, above-mentioned bar shaped luminous zone is located at the center position of flute profile luminous zone, bar shaped luminous zone
Heat dissipation channel is formed between lateral surface and the medial surface of ipsilateral flute profile luminous zone.
Preferably, epitaxial wafer I is adhesively fixed with epitaxial wafer II using metal adhesion technique, I lower end surface of epitaxial wafer and extension
Form metallic bond coat between the upper surface of piece II.
Preferably, the width of bar shaped luminous zone described above is 4。
Preferably, the width of above-mentioned flute profile luminous zone is 8。
Preferably, the width of above-mentioned deep trouth is 200, depth 10-30。
The beneficial effects of the present invention are: epitaxial wafer I and epitaxial wafer II are bonded by adhesion technique, while on epitaxial wafer I
Bar shaped luminous zone insertion epitaxial wafer II on flute profile luminous zone in, so that form chip of laser is emitted two kinds of waves simultaneously
The characteristic of long laser, manufacturing process is simple, can sufficiently be applied to dual laser medical field and night vision rifle takes aim at field.
Due to not needing the optical lens using light coupling technology and complexity, double-wavelength semiconductor laser is greatly reduced
The manufacturing cost of device.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the invention；
In figure, 1. epitaxial wafer, I 2. epitaxial wafer, II 3. bar shaped luminous zone, 4. flute profile luminous zone, 5. negative electrode, I 6. negative electrode II
7. 8. positive electrode of deep trouth.
Specific embodiment
1 the present invention will be further described with reference to the accompanying drawing.
A kind of two-wavelength semiconductor laser chip structure, comprising: epitaxial wafer I 1, lower end surface is provided with outwardly convex
Bar shaped luminous zone 3, the width of bar shaped luminous zone 3 is 3-4；And epitaxial wafer II 2, end face, which is provided with, thereon is recessed inwardly
Flute profile luminous zone 4, the width of flute profile luminous zone 4 is 8-10；The depth of flute profile luminous zone 4 and the height of bar shaped luminous zone 3
Match, I 1 lower end surface of epitaxial wafer and the upper surface of epitaxial wafer II 2 are adhesively fixed, and bar shaped luminous zone 3 is plugged in corresponding slot
In shape luminous zone 4.Epitaxial wafer I 1 and epitaxial wafer II 2 are bonded by adhesion technique, while the bar shaped on epitaxial wafer I 1 shines
Area 3 is inserted into the flute profile luminous zone 4 on epitaxial wafer II 2, so that form a chip of laser is emitted two kinds of wavelength lasers simultaneously
Characteristic, manufacturing process is simple, can sufficiently be applied to dual laser medical field and night vision rifle takes aim at field.Due to not
The optical lens using light coupling technology and complexity is needed, therefore greatly reduces the system of two-wavelength semiconductor laser
Cause this.
Embodiment 1:
It further, further include the deep trouth 7 in notch shape for being set to II 2 outboard end of epitaxial wafer, I 1 upper surface of epitaxial wafer is set
It is equipped with the negative electrode I 5 be connected with bar shaped luminous zone 3, II 2 lower end surface of epitaxial wafer is provided with to be born with what flute profile luminous zone 4 was connected
Electrode II 6, the upper surface of deep trouth 7 are provided with the positive electrode 8 being respectively turned on bar shaped luminous zone 3 and flute profile luminous zone 4.Pass through
Deep trouth 7 is set on epitaxial wafer II 2, so that bar shaped luminous zone 3 and flute profile luminous zone 4 is allow to share a positive electrode 8, from
And structure is advanced optimized, reduce manufacturing cost.
Embodiment 2:
Preferably, the width of the bar shaped luminous zone 3 of this two-wavelength semiconductor laser chip structure is 4.Flute profile luminous zone 4
Width be 8。
Embodiment 3:
Preferably, the width of the deep trouth 7 of this two-wavelength semiconductor laser chip structure is 200, depth 10-30。
Embodiment 4:
Further, bar shaped luminous zone 3 is located at the center position of flute profile luminous zone 4, the lateral surface of bar shaped luminous zone 3 and ipsilateral
Heat dissipation channel is formed between the medial surface of flute profile luminous zone 4.To improve the heat dissipation performance of semiconductor laser, it is extended
Service life.
Embodiment 5:
Epitaxial wafer I 1 is adhesively fixed with epitaxial wafer II 2 using metal adhesion technique, I 1 lower end surface of epitaxial wafer and epitaxial wafer II 2
Upper surface between form metallic bond coat.Metallic bond coat has excellent electric conductivity, improves epitaxial wafer I 1 and extension
The electric conductivity of piece II 2 and positive electrode 8.
Claims (7)
1. a kind of two-wavelength semiconductor laser chip structure characterized by comprising
Epitaxial wafer I (1), lower end surface are provided with the bar shaped luminous zone (3) of outwardly convex, the width of the bar shaped luminous zone (3)
For 3-4；And
Epitaxial wafer II (2), end face is provided with the flute profile luminous zone (4) being recessed inwardly, the width of the flute profile luminous zone (4) thereon
For 8-10；
The depth of the flute profile luminous zone (4) and the height of bar shaped luminous zone (3) match, epitaxial wafer I (1) lower end surface with
The upper surface of epitaxial wafer II (2) is adhesively fixed, and the bar shaped luminous zone (3) is plugged in corresponding flute profile luminous zone (4).
2. two-wavelength semiconductor laser chip structure according to claim 1, it is characterised in that: further include outside being set to
Prolong the deep trouth (7) in notch shape of piece II (2) outboard end, epitaxial wafer I (1) upper surface is provided with and bar shaped luminous zone (3)
The negative electrode I (5) of conducting, epitaxial wafer II (2) lower end surface are provided with the negative electrode II (6) with flute profile luminous zone (4) conducting,
The upper surface of the deep trouth (7) is provided with the positive electrode (8) being respectively turned on bar shaped luminous zone (3) and flute profile luminous zone (4).
3. two-wavelength semiconductor laser chip structure according to claim 1, it is characterised in that: the bar shaped luminous zone
(3) it is located at the center position of flute profile luminous zone (4), the lateral surface of bar shaped luminous zone (3) is interior with ipsilateral flute profile luminous zone (4)
Heat dissipation channel is formed between side.
4. two-wavelength semiconductor laser chip structure according to claim 1, it is characterised in that: the epitaxial wafer I (1)
Be adhesively fixed with epitaxial wafer II (2) using metal adhesion technique, the upper surface of epitaxial wafer I (1) lower end surface and epitaxial wafer II (2) it
Between form metallic bond coat.
5. two-wavelength semiconductor laser chip structure as claimed in any of claims 1 to 4, it is characterised in that:
The width of the bar shaped luminous zone (3) is 4。
6. two-wavelength semiconductor laser chip structure as claimed in any of claims 1 to 4, it is characterised in that:
The width of the flute profile luminous zone (4) is 8。
7. two-wavelength semiconductor laser chip structure according to claim 2, it is characterised in that: the deep trouth (7)
Width is 200, depth 10-30。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710644176.4A CN109326959B (en) | 2017-08-01 | 2017-08-01 | Dual-wavelength semiconductor laser chip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710644176.4A CN109326959B (en) | 2017-08-01 | 2017-08-01 | Dual-wavelength semiconductor laser chip structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109326959A true CN109326959A (en) | 2019-02-12 |
| CN109326959B CN109326959B (en) | 2020-03-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710644176.4A Active CN109326959B (en) | 2017-08-01 | 2017-08-01 | Dual-wavelength semiconductor laser chip structure |
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| Country | Link |
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| CN (1) | CN109326959B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005039001A1 (en) * | 2003-10-15 | 2005-04-28 | Sanyo Electric Co., Ltd | Two-beam semiconductor laser apparatus |
| CN2770169Y (en) * | 2005-02-25 | 2006-04-05 | 惠州市中科光电有限公司 | Three-wavelength semiconductor laser |
| CN1839524A (en) * | 2003-12-05 | 2006-09-27 | 日本先锋公司 | Process for fabricating semiconductor laser device |
| US20090074022A1 (en) * | 2007-09-19 | 2009-03-19 | Masahiro Kume | Dual-wavelength semiconductor laser device and method for fabricating the same |
| JP2010205819A (en) * | 2009-03-02 | 2010-09-16 | Sharp Corp | Dual-wavelength semiconductor laser device |
| JP2011023628A (en) * | 2009-07-17 | 2011-02-03 | Mitsubishi Electric Corp | Semiconductor laser device |
| US20120044965A1 (en) * | 2010-08-20 | 2012-02-23 | Sanyo Optec Design Co., Ltd. | Semiconductor laser apparatus and optical apparatus |
| CN102957094A (en) * | 2011-08-22 | 2013-03-06 | 山东浪潮华光光电子有限公司 | Full-solid-sate tri-phosphor laser chip and manufacturing method thereof |
-
2017
- 2017-08-01 CN CN201710644176.4A patent/CN109326959B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005039001A1 (en) * | 2003-10-15 | 2005-04-28 | Sanyo Electric Co., Ltd | Two-beam semiconductor laser apparatus |
| CN1839524A (en) * | 2003-12-05 | 2006-09-27 | 日本先锋公司 | Process for fabricating semiconductor laser device |
| CN2770169Y (en) * | 2005-02-25 | 2006-04-05 | 惠州市中科光电有限公司 | Three-wavelength semiconductor laser |
| US20090074022A1 (en) * | 2007-09-19 | 2009-03-19 | Masahiro Kume | Dual-wavelength semiconductor laser device and method for fabricating the same |
| JP2010205819A (en) * | 2009-03-02 | 2010-09-16 | Sharp Corp | Dual-wavelength semiconductor laser device |
| JP2011023628A (en) * | 2009-07-17 | 2011-02-03 | Mitsubishi Electric Corp | Semiconductor laser device |
| US20120044965A1 (en) * | 2010-08-20 | 2012-02-23 | Sanyo Optec Design Co., Ltd. | Semiconductor laser apparatus and optical apparatus |
| CN102957094A (en) * | 2011-08-22 | 2013-03-06 | 山东浪潮华光光电子有限公司 | Full-solid-sate tri-phosphor laser chip and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN109326959B (en) | 2020-03-27 |
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