CN109326612A - Display substrate and display device - Google Patents
Display substrate and display device Download PDFInfo
- Publication number
- CN109326612A CN109326612A CN201811160026.7A CN201811160026A CN109326612A CN 109326612 A CN109326612 A CN 109326612A CN 201811160026 A CN201811160026 A CN 201811160026A CN 109326612 A CN109326612 A CN 109326612A
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- Prior art keywords
- base plate
- display base
- signal wire
- transistor
- active area
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- 239000000758 substrate Substances 0.000 title claims description 24
- 239000000463 material Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000000059 patterning Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
- H10K59/1795—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of display base plate and display device, belongs to field of display technology, can at least partly solve the problems, such as that line resistance is excessive in existing display base plate.Display base plate of the invention includes multiple transistors and a plurality of signal wire, transistor includes active area, at least one insulating layer is equipped between signal wire and active area, the display base plate further includes at least one piece of auxiliary electrode for being arranged and being spaced apart from each other with active area same layer, and every piece of auxiliary electrode is electrically connected by least two first via holes in insulating layer with same signal line.
Description
Technical field
The invention belongs to field of display technology, and in particular to a kind of display base plate and display device.
Background technique
In display base plate, such as in inorganic micro- light emitting diode (Micro LED) display base plate, due to micro- hair therein
The driving current that optical diode needs is larger, correspondingly, it is desirable that the resistance of the route in display base plate is lower, the pressure drop on route
It is lower, to guarantee the uniformity of the electric current on each micro- light emitting diode on entire display base plate.
Summary of the invention
The present invention at least partly solves the problems, such as that line resistance is excessive in existing display base plate, provides a kind of display base plate
And display device.
According to a first aspect of the present invention, a kind of display base plate, including multiple transistors and a plurality of signal wire, transistor are provided
Including active area, at least one insulating layer is equipped between signal wire and active area, the display base plate further includes same with active area
Layer setting and at least one piece of auxiliary electrode for being spaced apart from each other, every piece of auxiliary electrode by least two first via holes in insulating layer with
Same signal line electrical connection.
Optionally, the auxiliary electrode is formed by the active area materials of conductor.
Optionally, first via hole of corresponding same signal wire is arranged along the length direction of the signal wire.
Optionally, the display base plate includes light-emitting component, and at least partly described signal wire is the first signal wire, and described the
One signal wire is connected between the light-emitting component and the first pole of the transistor.
Optionally, the light-emitting component includes inorganic micro- light emitting diode or Organic Light Emitting Diode.
Optionally, the transistor includes grid, and the display base plate further includes for being electrically connected and fixing driving chip
Binding electrode, at least partly described signal wire is second signal line, and the second signal line connects the binding electrode and extremely
The first pole of grid or transistor of a few transistor.
Optionally, the display base plate further includes substrate, and the transistor is set in the substrate, and the auxiliary electrode exists
Projection of the part between adjacent first via hole in the substrate of corresponding signal wire is wrapped up in the projection of the substrate.
Optionally, at least partly described signal wire includes multiple subsignal lines, is equipped with insulating layer between different subsignal lines,
And it is electrically connected between adjacent subsignal line by least two second via holes.
Optionally, second via hole of corresponding same signal wire is arranged along the length direction of the signal wire.
According to a second aspect of the present invention, a kind of display device is provided, including provided aobvious according to a first aspect of the present invention
Show substrate.
Detailed description of the invention
Fig. 1 a and Fig. 1 b be the embodiment of the present invention a kind of top view of display base plate in the first stage of manufacture and
Along the sectional view of L1 line；
Fig. 2 is a kind of second stage middle section figure of display base plate in manufacture of the embodiment of the present invention；
Fig. 3 a and Fig. 3 b be the embodiment of the present invention a kind of top view of display base plate in the phase III of manufacture and
Along the sectional view of L2 line；
Fig. 4 is a kind of sectional view of the display base plate of the embodiment of the present invention in the fourth stage of manufacture；
Wherein, appended drawing reference are as follows: 1, substrate；2, buffer layer；31, the first gate insulation layer；32, the second gate insulation layer；41, have
Source region；42, the first pole of transistor；43, the second pole of transistor；44, grid；5, auxiliary electrode；51, the first via hole；52, signal
Line；521, subdata line；53, the second via hole；6, interlayer insulating film；71, the first planarization layer；72, the second planarization layer；8, blunt
Change layer；9, black matrix；100, light-emitting component；101, the first pole of light-emitting component；102, the second pole of light-emitting component；103, key compound.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.
In the present invention, it is to be formed by the same material layer, therefore they are in layer that two structures " same layer setting ", which both refer to,
In folded relationship in identical layer, but their being equidistant between substrate are not represented, does not represent them between substrate yet
Other layers of structure are identical.
In the present invention, " patterning processes " refer to the step of forming the structure with specific figure, can be photoetching work
Skill, photoetching process include forming material layer, coating photoresist, exposure, development, etching, photoresist lift off and etc. in a step
Or multistep；Certainly, " patterning processes " can also be other techniques such as imprint process, InkJet printing processes.
Illustrate the structure of display base plate of the invention with the manufacturing process of inorganic micro- diode displaying substrate below
And advantage.It is other kinds of that identical principle is also applied for organic light-emitting diode display substrate and liquid crystal display substrate etc.
Display base plate.
Embodiment 1:
The present embodiment provides a kind of display base plate, including multiple transistors (including it is grid 44, the first pole of transistor 42, brilliant
The second pole of body pipe 43, active area 41) and a plurality of signal wire 52, transistor includes active area 41, signal wire 52 and active area 41 it
Between be equipped at least one insulating layer, display base plate further includes being arranged with 41 same layer of active area and be spaced apart from each other at least one piece auxiliary
Electrode 5, every piece of auxiliary electrode 5 are electrically connected by least two first via holes 51 in insulating layer with same signal line 52.
It that is to say the gap location between adjacent active regions 41, auxiliary electrode 5 made while making active area 41, by
It is formed in the two using identical material and is arranged for same layer, therefore do not needed in the manufacturing process of existing display base plate
Increase number of masks.Each auxiliary electrode 5 is electrically connected by least two first via holes 51 in insulating layer with same signal line 52
It connects, that is to say that auxiliary electrode 5 is in parallel with this signal line 52, the equivalent resistance of the two entirety reduces, and so reduces signal
Loss is conducive to the uniformity for improving driving current in display base plate.
Referring to Fig. 1 a and Fig. 1 b, in the first stage of display base plate manufacture, one layer of buffer layer 2 is formed on the base 1 first.
Substrate 1 is for example formed by glass material, and buffer layer 2 is e.g. by the mixture shape of the oxide of the nitride of silicon or silicon or both
At.It is formed simultaneously active area 41 and auxiliary electrode 5 on the buffer layer 2 using patterning processes later.Auxiliary electrode 5, which is located at, adjacent to be had
Interstitial site between source region 41, and separated with active area 41.
Referring to fig. 2, in the second stage of display base plate manufacture, the first grid of covering active area 41 and auxiliary electrode 5 is formed
Insulating layer 31 forms the pattern of grid 44 followed by patterning processes on the first insulating layer 31.Later using grid 44 as
Mask is doped active area 41, forms the source doping region and drain doping region of transistor.Preferably, to active area
41 while be doped, and is also doped to auxiliary electrode 5, to make 5 conductor of auxiliary electrode, further decreases auxiliary electricity
The resistance of pole 5 itself.The material of above first gate insulation layer 31 is, for example, the oxide of silicon, Doped ions be, for example, boron (B) or
Person's phosphorus (P).In this step, the step of being doped to auxiliary electrode 5 will not increase mask number.
The second gate insulation layer 32 is sequentially formed (e.g. in the phase III of display base plate manufacture referring to Fig. 3 a and Fig. 3 b
The nitride of silicon), interlayer insulating film 6 (mixture of nitride of the oxide of silicon or silicon or both), make via hole later, this
It is the first via hole 51 there are also part via hole partially for drawing the first pole of transistor 42 and the second pole of transistor 43 in a little via holes,
First via hole 51 is for auxiliary electrode 5 to be connect with the signal wire 52 subsequently formed.In this way, increasing the transversal of electric current walking
Face is also equivalent to reduce the resistance of signal wire 52 on the whole.
Optionally, the first via hole 51 of corresponding same signal wire 52 is arranged along the length direction of the signal wire 52.If so, then
It is that the path that makes signal walk in auxiliary electrode 5 is consistent with the path walked on corresponding signal wire 52, reduces the damage of signal
Consumption.
Display base plate after the completion of the phase III be equally applicable to production organic light-emitting diode display substrate and
Liquid crystal display substrate.Difference is only that the structure made after this step is different, but can realize 52 electricity of signal wire
The reduction of resistance, and do not increase number of masks.
Optionally, display base plate includes light-emitting component 100, and at least partly signal wire 52 is first the first signal wire of signal wire
It is connected between light-emitting component 100 and the first pole of transistor.
Optionally, transistor includes grid 44, and display base plate further includes the binding for being electrically connected and fixing driving chip
Electrode, at least partly signal wire 52 are second signal line, and second signal line connects and binds the grid of electrode He at least one transistor
Pole 44 or the first pole of transistor 42.
Specifically, signal wire 52 can be connection the first pole of transistor 42 to light-emitting component 100 route (referred to herein as the
One signal wire 52), it is also possible to connect the grid 44 of some transistor and another inside a sub-pix of display base plate
The route of first pole of transistor, it is of course possible to be connect display base plate binding electrode (Bonding Pad) arrive sub-pix
(grid 44 of the transistor in the sub-pix or the first pole 42).Those skilled in the art can be configured according to actual needs,
It does not limit this.
Optionally, light-emitting component 100 includes inorganic micro- light emitting diode or Organic Light Emitting Diode.Certain light-emitting component
100 may alternatively be pixel electrode (the case where corresponding liquid crystal display panel).
Optionally, display base plate further includes substrate 1, and transistor is set in substrate 1, projection packet of the auxiliary electrode 5 in substrate 1
Wrap up in projection of the part between adjacent first via hole 51 in substrate 1 of corresponding signal wire 52.
I.e. as shown in Figure 3a, auxiliary electrode 5 is wider than signal wire 52 at the position overlapped with signal wire 52, and from base
1 side of bottom is looked, complete " covering " this segment signal line 52.This is the resistance in order to further decrease auxiliary electrode 5 itself.
Optionally, at least partly signal wire 52 includes multiple subsignal lines 521, is equipped between different subsignal lines 521 exhausted
Edge layer, and pass through at least two second via holes 53 between adjacent subsignal line 521 (for connecting the mistake of two strip signal wires 521
Hole) electrical connection.
I.e. for the signal wire of multilayer wiring 52, the multiple subsignal lines 521 for constituting the signal wire 52 (are located at difference
Layer) also realize route parallel connection, in this way, further decreasing the equivalent resistance of signal wire 52.
Optionally, the second via hole 53 of corresponding same signal wire 52 is arranged along the length direction of the signal wire 52.This is also
In order to further decrease the loss of signal on the line.
Still by taking the manufacturing process of inorganic micro- diode displaying substrate as an example, as shown in figure 4, in the fourth order of manufacture
Section forms the first planarization layer 71 of covering first layer subsignal line 521, makes the second via hole 53, is formed using patterning processes
Second layer subsignal line 521 (two strip signal wires 521 multistage in parallel), subsequently forms passivation layer 8, forms the using patterning processes
Two planarization layers 72 form the first pole of light-emitting component 101, the second pole of light-emitting component 102, black matrix 9 using patterning processes, finally
By shifting process, inorganic micro- light emitting diode is fixed on 100 first pole of light-emitting component and light-emitting component by key compound 103
100 second extremely on.
Embodiment 2:
The present embodiment provides a kind of display devices, including display base plate provided by embodiment according to the present invention 1.
Specifically, the display device can be liquid crystal display panel, Organic Light Emitting Diode (OLED) display panel, inorganic micro-
Light emitting diode (Micro LED) display panel, Electronic Paper, mobile phone, tablet computer, television set, display, laptop,
Any products or components having a display function such as Digital Frame, navigator.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of display base plate, including multiple transistors and a plurality of signal wire, transistor include active area, signal wire and active area
Between be equipped at least one insulating layer, which is characterized in that the display base plate further include with active area same layer setting and each other
Every at least one piece of auxiliary electrode, every piece of auxiliary electrode passes through at least two first via holes in insulating layer and same signal line electricity
Connection.
2. display base plate according to claim 1, which is characterized in that the auxiliary electrode by conductor active area materials
It is formed.
3. display base plate according to claim 1, which is characterized in that first via hole edge of corresponding same signal wire should
The length direction of signal wire arranges.
4. display base plate according to claim 1, which is characterized in that the display base plate includes light-emitting component, at least portion
Dividing the signal wire is the first signal wire, and first signal wire is connected to the first pole of the light-emitting component Yu the transistor
Between.
5. display base plate according to claim 4, which is characterized in that the light-emitting component includes inorganic micro- light emitting diode
Or Organic Light Emitting Diode.
6. display base plate according to claim 1, which is characterized in that the transistor includes grid, the display base plate
It further include the binding electrode for being electrically connected and fixing driving chip, at least partly described signal wire is second signal line, described
Second signal line connects the first pole of grid or transistor of the binding electrode and at least one transistor.
7. display base plate according to claim 1, which is characterized in that the display base plate further includes substrate, the crystal
Pipe is set in the substrate, the auxiliary electrode the projection of the substrate wrap up corresponding signal wire in adjacent first via hole
Between part the substrate projection.
8. display base plate according to claim 1, which is characterized in that at least partly described signal wire includes multiple subsignals
Line is equipped with insulating layer between different subsignal lines, and is electrically connected between adjacent subsignal line by least two second via holes.
9. display base plate according to claim 8, which is characterized in that second via hole edge of corresponding same signal wire should
The length direction of signal wire arranges.
10. a kind of display device, which is characterized in that including display base plate described in -9 any one according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811160026.7A CN109326612A (en) | 2018-09-30 | 2018-09-30 | Display substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811160026.7A CN109326612A (en) | 2018-09-30 | 2018-09-30 | Display substrate and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109326612A true CN109326612A (en) | 2019-02-12 |
Family
ID=65266740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811160026.7A Pending CN109326612A (en) | 2018-09-30 | 2018-09-30 | Display substrate and display device |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110176481A (en) * | 2019-06-14 | 2019-08-27 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display device |
| CN110854137A (en) * | 2019-11-22 | 2020-02-28 | 京东方科技集团股份有限公司 | Display panel, array substrate and manufacturing method thereof |
| CN110853531A (en) * | 2019-11-21 | 2020-02-28 | 京东方科技集团股份有限公司 | Display drive backplane and preparation method thereof, and display panel |
| WO2020173202A1 (en) * | 2019-02-28 | 2020-09-03 | 京东方科技集团股份有限公司 | Circuit backplane of display panel, preparation method therefor and display panel |
| WO2020211537A1 (en) * | 2019-04-17 | 2020-10-22 | 京东方科技集团股份有限公司 | Array substrate, display panel, manufacturing method therefor, and display device |
| WO2020215414A1 (en) * | 2019-04-23 | 2020-10-29 | 武汉华星光电技术有限公司 | Array substrate and preparation method therefor |
| CN112103316A (en) * | 2020-09-15 | 2020-12-18 | 合肥维信诺科技有限公司 | Display panel and display device |
| CN112928195A (en) * | 2021-01-29 | 2021-06-08 | 京东方科技集团股份有限公司 | Light-emitting substrate, method for preparing light-emitting substrate and display device |
| US11316003B2 (en) | 2020-02-25 | 2022-04-26 | Boe Technology Group Co., Ltd. | Array substrate, display device, and method for manufacturing same |
| CN115172272A (en) * | 2022-07-29 | 2022-10-11 | 武汉新芯集成电路制造有限公司 | High-aspect-ratio TSV (through silicon via) electric communication structure and manufacturing method thereof |
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| CN112103316A (en) * | 2020-09-15 | 2020-12-18 | 合肥维信诺科技有限公司 | Display panel and display device |
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