CN109313405A - The method and apparatus of position for determining the method and apparatus of the position of object construction on substrate, for determining substrate - Google Patents
The method and apparatus of position for determining the method and apparatus of the position of object construction on substrate, for determining substrate Download PDFInfo
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- CN109313405A CN109313405A CN201780036588.8A CN201780036588A CN109313405A CN 109313405 A CN109313405 A CN 109313405A CN 201780036588 A CN201780036588 A CN 201780036588A CN 109313405 A CN109313405 A CN 109313405A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The object construction (402) of alignment mark such as on semiconductor substrate (400) etc is because opaque layer (408) thickens, so that it can not be positioned by alignment sensor (AS).The position of label, and relative position information of the area definition label relative to the position of one or more marginal portions of substrate before opaque layer formation are determined using marginal position sensor (412).Based on identified position, can be opened in opaque layer window (410).After the structure that gives away one's position, if desired, then alignment sensor can more accurately measure the position of object construction, for controlling further lithography step.Marginal position sensor can be the camera with angle Selection sexual behaviour.Marginal position sensor can integrate in alignment sensor hardware.
Description
Cross reference to related applications
This application claims the priority for enjoying the European patent application 16174142.6 that on June 13rd, 2016 submits, and
This application is incorporated herein by way of being cited in full text herein.
Technical field
The present invention relates to the methods and apparatus that for example can be used for manufacturing device by photoetching technique, and use photoetching technique system
The method for making device.The present invention relates more particularly to the method and apparatus for determining the position marked on substrate.The present invention into
The method and apparatus that one step relates to determining the position of substrate.
Background technique
Lithographic equipment is desired pattern to be applied on substrate, usually to the machine in the target of substrate.Lithographic equipment
It can for example be used in the manufacture of integrated circuit (IC).In this case, the alternatively referred to as pattern makeup of mask or reticle
Setting, which can be used for, generates the circuit pattern that will be formed on the individual course of IC.The pattern can be transferred to substrate (such as silicon wafer
Piece) on target part (a part, a tube core or several tube cores for example including tube core) on.The transfer of pattern usually via
In imaging to radiation-sensitive materials (resist) layer provided on substrate.In general, individually substrate will include subsequent pattern
The network of adjacent target portions.These target parts are commonly referred to as " field ".
In the manufacture of complex devices, many lithographic patterning steps are usually executed, thus shape in succeeding layer on substrate
At functional character.Therefore the critical aspects of the performance of lithographic equipment are built relative to (by identical equipment or different lithographic equipments)
Front layer in feature and pattern applied by accurately and precisely placing ability.For this purpose, it is provided pair for substrate
One or more set of fiducial mark note.Each label is can be sensed at the moment later using the usual optical position of position sensor
Device and the structure for measuring its position.It can include indicia patterns and device feature in the pattern for first layer.In chemistry
After physical treatment, label becomes the permanent structure for being used as reference in succeeding layer in registration pattern.First device layer wherein
It is not suitable for being formed in the situation of mark structure, can applies and handle " layer zero (layer zero) " pattern, is applicable in being formed
In other layers of mark structure of positioning.The pattern is then referred to as " alignment mark ".Position sensor is referred to as " alignment sensor ".?
The known example of alignment sensor is disclosed in patent US6297876 (Bornebroek et al.).Jan van Schoot,
Frank Bornebroek et al. in SPIE Symposium on Optical Microlithography March 1999,
Paper " the 0.7NA DUV STEP&SCAN SYSTEM FOR 150nm shown at Santa Clara, California, USA
Further discussing for the sensor and its application is contained in IMAGING WITH IMPROVED OVERLAY ".
Once upper at the top of the layer comprising alignment mark apply mew layer, occurs as soon as and believed using the position that position sensor obtains
It is number defective or the problem of can not obtain.Mark structure itself can also become to distort due to chemically and physically technique.In the position
It sets in sensor, many research and development and improvement has been carried out, to improve the measuring accuracy under condition and range.It can be subsequent
Additional markers are formed in layer, will be used when wherein original marking is covered.However, in some techniques, it is necessary to deposit new material
Layer, simply covered aligning indexing to the degree for being unable to measure position.The example of the material is tungsten.In order to accurate in this layer
Ground positioning devices pattern, it usually needs cutting openings are in layer to expose lower layer's alignment mark.These windows can be with rather rough
Ground positioning, however, there remains accuracy preset certain methods to determine the position of underlying label.Therefore, it has had already envisaged for not
With method to ensure some identifiable markers in opaque layer it is seen, for example, by being formed before depositing opaque layer material
Topological structure feature.This method includes additional processing step and cost, and occupies exceptional space on substrate, i.e., " accounts for
Ground area (real estate) ".
Summary of the invention
The present invention is intended to allow to determine the position marked regardless of superstructure whether there is, without valuableness in first aspect
Additional patterning and procedure of processing.
The present invention is intended to allow to be accurately determined the position of substrate on the other hand, independent of can become impaired or hide
The label covered.
The present invention provides a kind of method for positioning object construction on substrate in the first aspect, is covered by superstructure
Label.This method comprises:
(a) relative position information is provided, which defines the one or more sides marked relative to substrate
The position of edge point has defined the relative position information before superstructure formation；
(b) after superstructure formation, the position of the marginal portion is measured；And
(c) based on the position for measuring the marginal portion in step (b) and the relative position provided in step (a)
Information obtains the position of object construction；
Wherein in the one or both in step (a) and (b), the image of substrate edge area is obtained by using camera
And the position of marginal portion is measured, and
Wherein the optical system of camera is for angular-sensitive, to highlight the institute with special oblique angle in described image
State a part of fringe region.
In one embodiment, this method further comprises step: (d) is using the export position of object construction to remove
A part of superstructure is stated, with the structure that gives away one's position.Method is comprising steps of (e) in the knot that gives away one's position in another embodiment
After structure, than the position for more accurately measuring object construction in step (c).
In one embodiment, camera can be formed for the sensor of measurement object construction position in step (e)
A part.
In one embodiment, using identical as measuring the alignment sensor of object construction position in step (a)
Or similar alignment sensor, execute the more accurate position measurement in step (e).
In another embodiment, this method further comprises step: (f) uses object construction in lithographic process steps
More exact position control the positioning of the one or more patterns for being applied to substrate.
In one embodiment, the orientation and step (c) that step (b) further comprises determining substrate are in deriving step
(c) identified orientation is used in object construction position.It can be by being surveyed near the alignment features that are formed in edges of substrate
It measures the position of marginal portion and measures the orientation of substrate.Alternatively, by identifying that the orientation of the pattern of range spans substrate is surveyed
Measure the orientation of substrate.It can be identified in through the topological structure variation obtained of height of the measurement across substrate surface distributed
Pattern.Distributed pattern may include lattice.
In one embodiment, step (a) includes:
(a1) before forming the object construction, the position of the marginal portion is measured；And
(a2) in measuring at position defined by position relative to edges of substrate part, the object construction is formed.
In another embodiment, step (a) includes:
(a1) after forming the object construction, but before forming the superstructure, the edge part is measured
The position of the position and measurement object construction divided；And
(a2) based on the position measured in step (a1), the relative position information is recorded to be subsequently used for step (c).
In one embodiment, object construction is the alignment mark for positioning the pattern that will be applied to substrate.
In one embodiment, superstructure is the material opaque for one or more wavelength of sensing radiation
Layer.
In one embodiment, substrate is semiconductor wafer.
The present invention further provides a kind of equipment for positioning object construction on substrate, equipment in the first aspect
Include:
Storage device limits the relative position letter of the position of label for one or more marginal positions relative to substrate
Breath；
Marginal position sensor can operate the position to measure the marginal portion；And
Processor is arranged for measuring position and provide in the storage device based on the marginal portion
Relative position information and the position for exporting object construction；
Wherein the marginal position sensor includes the camera that can be used to obtain the image of the fringe region of substrate, with
And wherein the optical system of camera is angular selectivity so that enhancing the marginal portion in described image with special
The a part at inclination angle.
In one embodiment, marginal position sensor can be used to the measurement when superstructure is blinded by object construction
The position of the marginal portion, and wherein the equipment further comprises position sensor, which can operate use
In the position for more accurately measuring object construction after a part for having removed the superstructure.
In one embodiment, the camera forms the position sensing of the position for more accurately measuring object construction
A part of device.
In one embodiment, processor is further configured to use the institute of substrate in the position for calculating object construction
Determine orientation.
In one embodiment, processor is arranged to using near the alignment features in the edge by being formed in substrate
The position of the marginal position sensor marginal portion obtained and the orientation for determining substrate.
In one embodiment, processor is arranged to determine lining by the orientation for identifying the pattern of range spans substrate
The orientation at bottom.
In one embodiment, know in by the height sensor topological structure variation obtained across substrate surface
Other distributed pattern.
In one embodiment, distributed pattern includes lattice.
The present invention further provides a kind of for applying the lithographic equipment of pattern to substrate in the first aspect.The photoetching
Equipment includes equipment according to the present invention and for being applied to substrate using the position that is calculated of object construction to control
The controller of the positioning of one or more patterns.
The present invention further provides for a kind of for applying the lithographic equipment of pattern to substrate in first aspect.The lithographic equipment
Including equipment according to the present invention and for measuring position and control and limit the target knot using the marginal portion of substrate
The controller of the positioning of the pattern of structure.
Lithographic equipment can be adapted for the situation that the wherein substrate is semiconductor wafer.
Edges of substrate is used to position object construction as with reference to allowing not use additional patterned step, such as to fiducial mark
Note.Label can be formed at institute's defined position relative to edge, or can be after label is formed but in their changes
Relative position is measured before must covering.
The present invention provides a kind of method of position for measuring substrate in second aspect, wherein using camera to obtain substrate
Fringe region image, wherein the optical system of camera is angular selectivity, to enhance the side in described image
The a part with special inclination angle in edge region.
In one embodiment, camera further comprises the irradiation source being aligned with the optical axis of camera.
In one embodiment, angular selectivity camera is suitable for measuring the position for forming object construction on substrate
A part of sensor.Sensor is alignment sensor in the lithographic apparatus in another embodiment.
In one embodiment, substrate is semiconductor wafer.
The present invention further provides a kind of equipment for measuring substrate location in second aspect.The equipment includes can
Operate the camera for obtaining the image of the fringe region of substrate, wherein the optical system of camera be angular selectivity so that
A part that the fringe region has special inclination angle is enhanced in described image.
Camera can be based on the hardware provided in the alignment sensor of lithographic equipment.
In one embodiment, camera further comprises the irradiation source being aligned with the optical axis of camera.
In one embodiment, angular selectivity camera is suitable for measuring the position for forming object construction on substrate
A part of sensor.Sensor is the alignment sensor for lithographic equipment in another embodiment.
In one embodiment, camera is suitable for the situation that the wherein substrate is semiconductor wafer.
Invention still further provides a kind of computer program products, including are used for so that one or more programmable places
It manages device and implements processor and control according to the method and step of present invention described above and the machine readable instructions of equipment.It calculates
Machine program product may include the non-provisional storaging medium for storing the machine readable instructions.
It will be by considering that example as described below understands above and other aspects of the invention.
Detailed description of the invention
The embodiment of the present invention is described now with reference to attached drawing, only by exemplary mode, in which:
Fig. 1 depicts lithographic equipment；
Fig. 2 is schematically illustrated in measurement and exposure technology in the equipment of Fig. 1, according to known practice and according to the present invention
Embodiment and modify；
Fig. 3 is diagrammatically illustrated using position sensor to measure the position to form object construction on substrate, and not
The problem of upper transparent layer structure；
Fig. 4 diagrammatically illustrates the method for determining the position of object construction in the first embodiment of the invention；
Fig. 5 diagrammatically illustrates the method for determining the position of object construction in second embodiment of the invention；
Fig. 6 shows the operation of angular selectivity camera in embodiments of the present invention；
Fig. 7 and Fig. 8, which is schematically illustrated in, can be used for integrated angle selectivity phase in the position sensor in lithographic equipment
Machine；
Fig. 9 shows the position for determining two object constructions under opaque layer comprising determines the orientation of substrate；
Figure 10 diagrammatically illustrates one of the illustrative methods that position is measured for the fringe region calculating for substrate
Point；
Figure 11 shows the first illustrative methods for determining the orientation of substrate；And
Figure 12 shows the second illustrative methods for determining the orientation of substrate.
Specific embodiment
Before the embodiments of the invention are explained in detail, it is beneficial to which showing for the embodiment of the present invention wherein can be implemented in displaying
Example property environment.
Fig. 1 schematically depicts lithographic equipment LA.Equipment include be configured for adjust radiation beam B (such as UV radiation or
DUV radiation) irradiation system (illuminator) IL, be configured to support and patterning apparatus (such as mask) MA and be connected to configuration
For the patterning apparatus support or support construction of the first locator PM of patterning apparatus to be precisely located according to certain parameters
(such as mask stage) MT；It is configured to fixed substrate (such as the chip for being coated with resist) W and is each connected to
It is configured for being precisely located two substrate working platforms (such as chip work of the second locator PW of substrate according to certain parameters
Make platform) WTa and WTb；And it is configured for projecting the pattern for assigning radiation beam B by patterning apparatus MA to the mesh of substrate W
Mark optical projection system (such as refractive projection lens system) PS on part C (for example including one or more tube cores).Reference coordinate
It is RF connection all parts, and is used as being arranged and measuring patterning apparatus and substrate and the thereon ginseng of the position of feature
It examines.
Irradiation system may include the various types optical component for guiding, shaping or controlling radiation, such as reflects, is anti-
Penetrate, magnetism, electromagnetism, electrostatic or other types optical component, or any combination thereof.
Patterning apparatus is with orientation, the design of lithographic equipment and the other conditions such as example depending on patterning apparatus
Such as mode that whether patterning apparatus is fixed in vacuum environment, fixed pattern makeup is set.Patterning apparatus support can be used
Machinery, vacuum, electrostatic or other clamping techniques are set with fixed pattern makeup.Patterning apparatus support MT can be frame or work
Platform, for example, its can be if required it is fixed or movable.Patterning apparatus support may insure that patterning apparatus is in
At required position, such as relative to optical projection system.
Term " patterning apparatus " as used herein should be broadly interpreted as being related to can be used for assigning spoke in cross section
Beam pattern in order in the target part of substrate generate pattern any device.It should be noted that assigning the pattern of radiation beam
The required pattern that can be completely corresponding in the target part of substrate, for example, if pattern includes phase shift characteristics or so-called
Supplemental characteristic.In general, the specific function layer in the device generated in target part will be corresponded to by assigning the pattern of radiation beam,
Such as integrated circuit.
As described herein, equipment is transmission-type type (for example, by using transmission-type patterning apparatus).Alternatively, equipment can be with
It is reflective types (for example, by using the programmable mirror array of type as described above, or using reflection type mask).Patterning
The example of device includes mask, programmable mirror array and Programmable LCD panel.In this term " reticle " or " mask "
Any use can be regarded as it is synonymous with more essential term " patterning apparatus ".Term " patterning apparatus " can also be construed to relate to
And the device of the pattern-information for controlling the programmable patterning apparatus is stored in digital form.
Term " optical projection system " used herein can be broadly interpreted as encompassing any type optical projection system, including folding
Penetrate, reflect, turn back penetrate, be magnetic, electromagnetism and electrostatic optics system, or any combination thereof, as suitable for use exposing radiation
, or such as using immersion liquid or use vacuum suitable other factors.In any of this term " projecting lens "
It is synonymous with more essential term " optical projection system " using that can be regarded as.
Lithographic equipment is also possible to wherein can be by such as water covering substrate of the liquid with relatively high refractive index extremely
Few a part of type in order to be filled in space between optical projection system and substrate.Immersion liquid can also be applied to lithographic equipment
In other spaces, for example, between mask and optical projection system.Immersion liquid is known in the art the number for increasing optical projection system
It is worth aperture.
At work, illuminator IL receives radiation beam from radiation source S O.Source and lithographic equipment can be discrete entity, such as
When source is excimer laser.In this case, source is not construed as foring a part of lithographic equipment and radiation
Beam cutoff reaches illuminator IL from source SO in including such as suitably beam transportation system BD of guidance mirror surface and/or beam expander.
Source can be the integral part of lithographic equipment in other situations, such as when source is mercury lamp.If source SO and illuminator IL, needed
Radiating system can be referred to as together with beam transportation system BD if wanting.
Illuminator IL can for example including the adjuster AD of the angular intensity distribution for adjusting radiation beam, integrator IN with
And condenser CO.Illuminator can be used for adjusting radiation beam, to have required uniformity and intensity distribution in its section.
Radiation beam B, which is incident on, to be fixed on the patterning apparatus MA on patterning apparatus support MT, and by patterning apparatus
And it patterns.Patterning apparatus (such as mask) MA is crossed, radiation beam B passes through the target that wave beam is focused to substrate W
Optical projection system PS on the C of part.By means of the second locator PW and position sensor IF (such as interferometer, uniform enconding
Device, 2-D encoder or capacitive sensor), substrate working platform WTa or WTb can be moved, such as accurately in order to radiate
Different target part C is positioned in the path of beam B.Similarly, the first locator PM and another location sensor be (in Fig. 1 not
It is explicitly illustrated) it can be used for the path relative to radiation beam B and patterning apparatus (such as mask) MA be precisely located, for example,
After mask library machine searching or during scanning.
Mask alignment mark M1, M2 and substrate can be used to fiducial mark in patterning apparatus (such as mask) MA and substrate W
Remember P1, P2 alignment.Although shown as substrate alignment mark occupy dedicated target portion, but they can be located at target portion
/ space in (these are known as scribe line alignment mark).Similarly, it (such as is covered in patterning apparatus wherein
Mould) it provides on MA in the situation of more than one tube core, mask alignment mark can be between tube core.Small alignment mark can also
To include among device feature, wishing to mark as small as possible wherein and being not necessarily to any different from adjacent feature in tube core
Imaging or process conditions situation in.It is described further below detection alignment mark to Barebone.
Shown equipment can be used for various modes.In scan pattern, project when by the pattern for assigning radiation beam to target
On the C of part when (namely single dynamic exposure), synchronously scan pattern device seat (such as mask stage) MT and substrate
Workbench WT.Substrate working platform WT can be by relative to the speed of patterning apparatus support (such as mask stage) MT and direction
The scaling and image reversal characteristics of optical projection system PS and determine.In scan pattern, the full-size of exposure field is limited in list
The width (along non-scan direction) of target part in secondary dynamic exposure, and the length of scanning motion has determined the height of target part
(along scanning direction).Other types lithographic equipment and operation mode be it is possible, as this field is widely known.For example, stepping mould
Formula is known.In so-called " maskless " photoetching, programmable patterning apparatus is kept fixed but uses the pattern changed,
And mobile or scanning substrate working platform WT.
The combination and/or deformation of above-mentioned use pattern can also be used, or uses entirely different use pattern.
Lithographic equipment LA is so-called dual station bench-type, and there are two substrate working platform WTa, WTb and two platform-exposures for tool
Light platform EXP and measurement platform MEA- can exchange substrate working platform between them.When one lining of exposure at exposure platform
When a substrate on the workbench of bottom, another substrate can be loaded on another substrate working platform at measurement platform and be held
The various preparation process of row.This enabled handling capacity for significantly improving equipment.Preparation process may include being drawn using horizon sensor LS
The surface height profile of substrate processed simultaneously uses the position of alignment mark on alignment sensor AS measurement substrate.If when it is being measured
Position sensor IF is unable to measure the position of substrate working platform at platform and when exposing at platform, can provide the second position
Sensor is to enable the position for tracking substrate at two platforms relative to reference frame RF.The dual station platform shown in is set
It sets, other settings are known and can be used.For example, other lithographic equipments be it is known, which provide substrate working platforms
With measurement workbench.When executing preparation measurement, these codes are connected together, and then tear open when substrate working platform undergoes and exposes
Solution.
Fig. 2 shows expose target part (such as tube core) on substrate W in double platform equipments of Fig. 1.It will be first
Technique according to conventional practice is first described.
Left-hand side is to measure the step of executing at platform MEA, and right-hand side is shown in exposure platform in dotted line frame
The step of being executed at EXP.Sometimes, a substrate working platform in substrate working platform WTa, WTb will be another at exposure platform
It is a to measure at platform, as described above.For the purpose of the explanation, it is assumed that substrate W has been loaded in exposure platform.In step
At rapid 200, new substrate W ' is loaded onto equipment by unshowned mechanism.The two substrate parallel processings set in order to improve photoetching
Standby handling capacity.
Referring initially to the substrate W ' newly loaded, untreated substrate before this can be has new photoresist and uses
In exposing for the first time in a device.However in general, the photoetching process will be only in a series of exposures and procedure of processing
One step, therefore substrate W ' passes through the equipment and/or other lithographic equipments for several times, and after can also having gone through
Continuous technique.Especially for improving the problem of being overlapped performance, task is to ensure that in one for having been subjected to patterning and processing
Or apply new pattern in the correct position on the substrate of multiple circulations.These procedure of processings gradually introduce necessary in the substrate
Measure and correct the distortion to realize satisfied overlapping performance.
Before being executed in other lithographic equipments and/or subsequent patterning step, as just mentioned, and can be
It is executed in different type lithographic equipment.For example, can compared with other layers with less requirement in more advanced lithography tool,
Execute some layers in the device high for the parameter request of such as resolution ratio and overlapping of manufacturing process.Therefore type can immersed
Some layers are exposed in lithography tool, and expose other layers in " dry type " tool.One is exposed in the tool for working in DUV wavelength
A little layers, and other layers are exposed using EUV wavelength radiation.
At 202, using substrate label P1 etc. and imaging sensor (not shown) to locating tab assembly for measuring and recording
Alignment of the substrate relative to substrate working platform WTa, WTb.In addition, alignment sensor AS will be used to measure the several right of across substrate W '
Fiducial mark note.In one embodiment, using these measurements to establish " die grid (wafer grid) ", this is highly precisely drawn
The indicia distribution across substrate is made, including any distortion relative to specified rectangular mesh.
At 204, wafer height (Z) and X-Y location comparison diagram are also measured using horizon sensor LS.Routinely, only
The vernier focusing of exposing patterns is realized using height map.This can be used for additional other purposes.
When loading substrate W ', reception scheme data 206.Protocol 206 defines pending exposure and chip
With the attribute for the pattern that manufactures and will manufacture on it before.The wafer position, die grid and height that will be obtained 202,204
The measured value of degree figure is added to these protocols, therefore the complete set of scheme and measurement data 208 can be transferred to exposure
Light platform EXP.The measured value of aligned data for example including relative to the product pattern as Photolithograpic craft product with fixed or volume
The X and Y location of alignment target for determining fixed relationship and being formed.These aligned datas just obtained before exposure will for using
Parameter that model is fitted with data and generate Alignment model.These parameters and Alignment model will be used with school during exposing operation
The position of the pattern just applied in current photolithographic step.The model just used is measuring insertion position deviation between position.Often
The Alignment model of rule may include four, five or six parameters, together define various sizes of " ideal " grid translation,
Rotation and scaling.Advanced model using more parameters is known.
At 210, wafer W is exchanged ' and W, therefore the substrate W ' measured becomes the substrate W for entering exposure platform EXP.?
In the example devices of Fig. 1, the exchange is executed and exchanging support WTa and WTb in equipment, therefore substrate W, W ' keep essence
It really clamps and is located on these supports, to retain the opposite alignment between substrate working platform and substrate itself.Therefore, once
Had exchanged workbench, it must be determined that relative position between optical projection system PS and substrate working platform WTb (WTa in the past) with
The metrical information 202,204 of substrate W (W ' in the past) is utilized in the control of step of exposure.At step 212, mask registration mark is used
Remember that M1, M2 execute reticle alignment.In step 214,216,218, across substrate W applies scanning motion at successive objective position
With radiation pulse, in order to complete the exposure of many patterns.
By using the aligned data and height map obtained at measurement platform in step of exposure executes, relative to wishing
It hopes position and is particularly accurately aligned with these patterns relative to the feature deposited before on the same substrate.In step
The exposure substrate of W " is labeled as at 220 now from device uninstallation, with experience according to the etching of exposing patterns or other techniques.
In some techniques, having formd the layer after alignment mark on working process substrate causes wherein due to signal
Intensity it is low or without and the situation of label can not be found by alignment sensor.It can be by blocking alignment sensing at the top of label
Device work opaque layer and cause low or zero-signal intensity.
Fig. 3 shows problem (diagrammatically illustrating the feature in these drawing, and not in scale).Cutting at 300
A part of substrate is shown in the figure of face.Fig. 3 (a) is shown when having formd optical grating construction for use as alignment mark 302
Substrate the case where.It should be understood that the label 302 is only one across multiple labels existing for substrate.Inhomogeneity can be provided
Phenotypic marker, to adapt to different sensors and/or different process conditions.It can be measured for rough position and fine location is surveyed
Amount provides not isolabeling.The feature for defining grating has been applied to using lithographic equipment LA or similar devices the green body of substrate
(blank) material in resist layer to form pattern, and etches applied pattern chemically or physically then to form ditch
Therefore slot simultaneously limits permanent optical grating construction.These grooves then can be filled using another layer material 304.To form grating knot
The patterning of structure can execute a part of the first layer processing as substrate, wherein identical patterning step is also applied for the
One layer device feature.Alternatively, in some techniques, alignment mark 302 is formed preferably in specific step, can be referred to as
" layer 0 ".
As it can be seen that alignment sensor AS in lithographic equipment can be used to read the position of label 302 such as at (b), even if
When it becomes being buried under such as superstructure of material layer 304 and 306 etc.Known alignment sensor generally provides
The ability read using different radiation wavelengths, in order to penetrate typical superstructure.On the other hand, used in device configuration
Some materials can be any radiation that can be applied in alignment sensor opaque.In Fig. 3 at (c), add
Layer 308 is added.This may, for example, be metal, such as tungsten layer or carbon hard mask layer.Applied layer 308 is schemed with preparing to assign to layer 308
Case to form the functional layer of device, or forms the hard mask for etching underlying layer.However, layer 308 is for alignment sensor AS
Radiation be opaque.
It is not also left in layer 308 it is possible thereby in the situation of any topological features for finding label, if do not adopted
With additional measurement, then pattern can not be precisely located to limit feature in layer 308.For example, as it is known that manufacturing volume in succeeding layer
External labeling is to promote label to detect.However, the manufacture of these additional markers is expensive.If on markd top with
Such mode opens optical window so that only removing the material being located on label top surface and therefore can be with measurement markers, then
It can be to avoid these additional markers.This generates situations shown in Fig. 3 (d), wherein opening in opaque layer 310
Window 310, only near underlying label 302.As further shown, the opening of window 310 allows alignment sensor AS to read
The position of label 302, therefore lithographic equipment can the accurately position subsequent pattern on layer 308.
The optical window needs for being known as " removing (clear-out) " are completed with a certain position precision, are otherwise managed
Core yield will be influenced by part needed for being cut into the reservation function device of layer.By modifying below opaque layer 308
Layer topological structure, be capable of providing can precisely enough detect with allow to understand window positioning alignment mark.However, this
Additional procedure of processing and cost are also required a bit.
Fig. 4 shows alternative, based on use the marginal portion 420 of substrate 400 as reference, for determine label
Position, despite the presence of top structure.Green body substrate material is labeled as 400, and other structures have and mark identical in Fig. 3
Note, but use prefix " 4 " substitution " 3 ".Therefore, the step sequence phase shown in Fig. 4 (a) to Fig. 4 (d) and label 402
Between, the superstructure including layer 404,406 and opaque layer 408 is formd, and window 410 is opened in opaque layer.It replaces
In generation, the method for Fig. 4 was using edge sensor 412 to measure substrate in providing the special marking that can be read by alignment sensor
The position of marginal portion 420, and calculate based on the measuring position of marginal portion the position of covert marks 402.
Edge sensor 412 is considered camera.In the following specific embodiment being explained in greater detail or this public affairs
In opening so that the optical system of camera is especially sensitive for certain angle of radiation, therefore will in by camera captured images with
Some modes enhance certain a part of the sphering slope edge 422 of substrate 400.It, can in unshowned some other embodiment
The contrast in image is observed to provide camera, and identifies the edge of substrate in this way.No matter which embodiment is implemented,
It all certainly include suitable irradiation in optical system.Irradiation can be provided by optical system, or come from some external sources,
It is guided at substrate holder at edges of substrate or thereunder.
As below further finding, the camera for being suitable as edge sensor 412 lithographic equipment can will be already present on
In the alignment sensor AS of LA.In some type of alignment sensors, for the reason unrelated with the detection of edges of substrate, camera
It has been angular selectivity.In some other situation, camera can be changed into the camera of angular selectivity by simple modification.
It will be based on showing following example in the alignment sensor mentioned in patent and the described in the text, background technology part of opinion.
In more detail referring to the method for Fig. 4, step (a) and (b) are shown in first layer or " layer 0 " patterning in this example
The step of label 402 are formed in step.At (a), it is seen that before having formd label 402, sensor 412 is measured
Or determine the position at the edge of substrate 400.At (b), by patterning, etching and filling step with be used to form in Fig. 3
The identical mode of label 302 and form label.However, the position of this secondary control label 402 is to make it have relative to substrate edge
The known location of edge.Certainly, show one-dimensional relative position, but actual substrate have can with the marginal portion of two-dimensional measurement, and
And the position of label is limited with two dimension.In addition, as has been described, label 402 in practice can be across the several of substrate positioning
Perhaps one in multiple labeling.Position of all these labels 402 relative to 400 edge of substrate is recorded, for future reference.It
Can recorde in lithographic equipment, and/or can recorde them and as a part of protocol mentioned in Fig. 2
And it is transmitted together with substrate.
Referring now to Fig. 4 (c), layer 406 and opaque layer 408 are applied on label 402, therefore it can not be again
It is read by alignment sensor or is detected.However, it is possible to be read by sensor 412 or detected the position at the edge of substrate.By again
The position of the marginal portion of secondary measurement substrate, and by using the storage relative position of label, label 402 can be calculated
Position.Window 410 can be opened at desired position, as shown in Fig. 4 (d).
As has been described, lithographic equipment LA has included extremely accurate encoder for tracking substrate working platform and its
Any movement of the substrate of upper load relative to reference frame RF.Correspondingly, all essences of these positioning systems be can use
Exactness, to obtain point-device record of the relative position of label and edges of substrate.Therefore mainly by measurement marginal position
Accuracy limits the accuracy of anchor window 410.However, using technology disclosed herein, it is believed that can be with enough essences
Exactness executes the positioning of window 410, to no longer need to provide additional so-called coarse alignment label.Further, potentially, may be used
The precise measurement of the marginal position of substrate is used as the substitution marked for provided coarse alignment.Therefore it can discharge usually
By the occupied space of coarse alignment label to be used for other purposes.
Fig. 5 illustrates the another method that identical result wherein may be implemented.Illustrate be labeled as 400 to 422 part, with
It is identical in Fig. 4.Method and step (a) to (d) is very similar, in addition to and be not used sensor 412 measure edges of substrate position
It sets until except after foring label 402 in step (a).As seen in the step (b), it is assumed that can be still by right
Quasi- sensor detects and uses label 402, can be used and calculates it relative to substrate by the measured value that edge sensor 412 obtains
The position at edge.Two position measurements will be obtained using the substrate in lithographic equipment on substrate working platform WTa or WTb is loaded onto
Value.As has been described, lithographic equipment LA has included extremely accurate encoder for chasing after middle substrate working platform and loading it
On any movement of the substrate relative to reference frame RF.Therefore, the highest accuracy of these positioning systems can be administered, with
Obtain point-device record of label and edges of substrate relative position.
Opaque upper layer 408 apply before provide relative position measured value, edge sensor 412 and record relatively
Position can be used for window 410 in step (c) and (d), as shown in the method for Fig. 4.
In the schematic diagram of Fig. 4 and Fig. 5, fringe region is shown as not changing, and other regions receive a variety of materials layer.It is real
In border, all parts of substrate can be subjected to chemically and physically working process with applied layer.Side only for simplicity, in these figures
Edge region is shown as keeping " clean ".If necessary, then adjustable and calibrating position measures, to correct in marginal zone
It will affect the change of position measurements in domain.
Fig. 6 shows the working principle of the edge sensor 412 in a specific embodiment of the disclosure.In the embodiment
In, edge sensor can be described as angular selectivity camera.The camera can be the existing camera of existing alignment sensor,
The modification of its existing camera that can be existing alignment sensor or its can be for marginal position detect it is special provide point
Vertical camera.It the use of existing hardware is attractive for the reason of cost and space without saying more.It is mentioned above existing
The alignment sensor of type described in patent and paper is present in many semiconductor manufacturing facilities all over the world.
In Fig. 6, substrate 602 is installed on substrate working platform 604.By the various sensors and servo-system of lithographic equipment
Location information PWT is exported, and location information PWT is input to processor 606.Also by image data 608 from angular selectivity
The imaging sensor 610 of camera is input to processor 606.Imaging sensor 610 can be conventional CCD or cmos sensor,
It includes the array of photoelectric detector corresponding with the pixel of captured images.Optical system 612 is on imaging sensor 610
Form the image of substrate.Optical system is indicated by the pairing of lens 614,616 in this example, although naturally in practice can be pre-
Phase more complicated optical system.It is provided by lens 614 using suitable light source 620 and partially reflecting surface 622 for camera
Irradiation.
The component will be carried out conventional camera so far.Conventional camera can be using suitable irradiation and figure
It is used as a kind of method of measurement edges of substrate position as processing.However in this example, pass through the pupil plane P in optical system
In include aperture (aperture) device 624, camera is the camera of angular selectivity.As known in the art, pupil
Point in face is corresponding in the angle and visual detector 610 radiated at angle of radiation in imaging plane namely substrate surface
The angle of radiation.The aperture of certain angles is only selected by placing in pupil plane, and angular selectivity camera can be made in institute
Only reinforced phase those of is located at special angle feature for illumination radiation 626 in capture image.
In Fig. 6 (a), illustrative aperture arrangement 624a and 624b is shown as insertion details in plan view.It is pure
Schematically and these have been not drawn to scale it.First aperture arrangement 624a includes that the annular around the optical axis at preset distance is opened
Mouthful.As has been described, which corresponds to the angle [alpha] in the input end to optical system 612.Referring now to the place Fig. 6 (b)
The amplification details of edges of substrate part, shows the radiation of various radiation modalities and reflection.Vertically draw relative to substrate plane
Irradiation is led, and is overlapped with the optical axis O of camera optical system 612.The edge of substrate 602 has oblique angle (bevel) shape of sphering
Formula is bent from flat 632 to extreme edge part 634 with the angle of increase.Therefore, by the different piece of edges of substrate
Along the ray of different directions reflected illumination radiation 626.
It is 636 at oblique angle by only reflecrtive mark in all rays of the illumination radiation 626 of irradiation on the surface of a substrate
Ray those of in the special area of shape, the ray is as relative to the optical axis ray 638 that α is propagated at a predetermined angle.Therefore, only
These rays can pass through aperture arrangement 624 and be contributed with the formation for the image on imaging sensor 610.Fig. 6 (c) signal
Property shows the image.Different from substrate and its normal image on periphery, the angle Selection behavior of optical system 612 causes as follows
Image, the image particularly enhance the part 636 of edges of substrate and inhibit other parts.In the example shown, the enhancing
Lead to the bright band 640 across image.When the image is provided to processor 606, lines 642 can pass through bright band
Pixel.The measurement 644 of marginal position can be obtained relative to reference frame RF.
Angular selectivity camera can be moved to each position around edges of substrate, until obtaining enough measurements
Value, as described below.Fig. 6 (d) shows light 640 and therefore circumferential perimeter of the angle of fit line 642 in substrate
How to change.Many samples are acquired at perimeter different location, obtain many samples as desired, processor 606 can
To provide marginal position measured value PE for referring to Fig. 4 and Fig. 5 the process described above.
Referring to alternative aperture arrangement 624b, it can be seen that the aperture arrangement does not have annular opening simultaneously, but on the contrary only
With one or more openings along X and the setting of Y-axis line.As a result, some existing alignment sensors have camera, the camera
Including the aperture arrangement effectively in them, as described further below.When using specific wavelength radiation irradiation, hole is finely tuned
The expection angle of diffraction that the positioning of diameter is measured to alignment mark grating diffration rank.Therefore the optical system of alignment sensor has been
Angular selectivity, in order to select the purpose of different diffraction orders amounts.Same type aperture arrangement is used near edges of substrate,
The angular selectivity characteristic of known optical systems be can use to realize and identical result shown in Fig. 6 (c).However, using
Aperture arrangement 624b's is limited in: when the ray reflected is aligned with X or Y-direction, will only enhance in captured images
The angle part 636 of edges of substrate.For example, will there is edge without using the capture of the second aperture arrangement as shown in Fig. 6 (d)
The image of sloping portion.However, can be enough to realize if the position at edge can be measured at north, south, east and west position
The exact position of substrate measures.In fact, as can be seen, the visual field of camera is enough to capture many this sample images, or even is serving as a contrast
In the away minor segment of bottom periphery.In known alignment sensor, the visual field of camera is less than the half of 1mm, and typical substrate is straight
Diameter is 300mm.
Fig. 7 has reproduced the known alignment sensor of the paper from van Schoot et al. involved in background technology part
Figure.Reference should be made to patent and paper, the patent and paper pass through herein for design and operation full details for the sensor
Its content is incorporated herein by the mode being cited in full text.As explained in paper, it is known that alignment sensor tool there are two optical system
System uses different wave length radiation (such as green and red laser radiate) work.Assuming that being used for the optical system of red radiation
Optical system in the top of figure, and for Green-Emission is in bottom one side of something.The system that will be described only for Green-Emission.
The light source of 702 form of laser generates the light of desirable wavelength and characteristic.Optical fiber 704 guides laser towards position sensor optics
Module 706.It can wander back to, mark the form with periodic, and by radiation diffraction into multiple different directions.By
The individual diffraction orders that label 402 is reflected are imaged in the unfilled aperture on reference plate 710.Therefore, one is transmitted light to
Train detector 712.The array 714 of wedge is provided, deflects each diffraction orders amount along specific direction.By this method, it is referring to
Each diffraction orders are imaged at discrete positions on plate 710.The signal generated by detector can be handled therefore to distinguish optics letter
Extensive various conditions in number, and acquisition more information is imaged to label than attempting only to disposable all rank amounts.
Shown in paper as quoted, ccd sensor 720 is provided, for use as the optical system for seeing through position sensor
Camera on to substrate.Therefore the camera can be used to obtain the image of edges of substrate, and measure the position of edges of substrate with
For method disclosed herein.Introduce aperture arrangement 624 and as shown schematically in figure 7, can make the camera at
For angular selectivity camera, work as described above with reference to Figure 6.By this method, will be had by 720 captured image of sensor
The specific part of the bevel angle enhanced in them provides accurate with reference to based on the relative position about label 402
It calculates.It may be noted that cause the part 636 of brightness in captured images neither the flat of substrate edge,
It is not extremely peripheral 634.On the contrary, it is only the reproducible part at edge, it can be by being selected using the angle of camera optical system
The behavior of selecting reliably detects.When angle [alpha] can be any, the reference of consistency is provided for the measurement of marginal position.
Fig. 8 shows another form of the alignment sensor including angular selectivity camera.Reference marker 802 to 814 is used
In reference feature identical with reference marker 702 to 714 in Fig. 7.In this example, ccd sensor 820 is coupled to optical system
The optical system of 806 green branch, in the downstream of the array 814 of wedge.As shown schematically in plan view, the array 814
Has the effect of the special angle radiation that only transmitting is aligned with X and Y-axis line.Therefore, figure can be obtained from the sensor 820
The image of form shown in 6 (c), and alignment sensor is not modified further.In these images, due to ccd sensor
The angle Selection behavior of 820 optical systems being installed therein will enhance the oblique angle shape of edges of substrate in captured images
Certain a part, as long as the part is aligned with X-axis line or Y-axis line.
Finally, Fig. 7 and Fig. 8 show the optical system that can use and be already present in general type alignment sensor such as
The position at the edge of what measurement substrate, and execute their measurement across substrate optical grating construction (alignment mark) position
More common task.By simply modifying the alignment methods above by reference to described in Fig. 2, the position at edge can be measured and captured simultaneously
Reuse relative position.
Referring now to Fig. 9 (a), the plan view of substrate is illustrated, wherein along the position at four direction measurement edge.In order to show
Meaning explanation, using label north, south, east and west, at position (xn, yn), (xe, ye) measures chip at (xs, ys) and (xw, yw)
Along four endpoints of X and Y-direction.The position (xc, yx) of substrate center can be calculated.It should be understood that all these positions are in phase
In coordinate system defined by reference frame RF for lithographic equipment.Assuming that layer of the surface of substrate by opaque material
408 are covered, and Fig. 9 (a) shows the position that can not detect top alignment mark 402.However, as it can be seen that using in such as Fig. 9 (b)
The relative position information more early recorded, and the use such as substrate center position as measured by edge sensor 412 (xc,
Yc), label can be found in exposed region and being positioned properly pattern to limit window 410.
Note that the explanation that simplifies of Fig. 9 (b) assumes that substrate around the orientation of axis is fixed, in fact, orientation can be with
Change between the different moments being loaded onto same substrate in identical or another lithographic equipment.Therefore, in practical embodiments
In, the position at the edge of substrate is measured, and also directional angle θ of the measurement substrate relative to the limited axis of equipment.Half
In conductor manufacture in the situation of universal circular substrate, the measurement of marginal position does not disclose orientation.It is explained below to be used to survey
Measure the distinct methods of orientation.Though using which method, Fig. 9 (c) be shown in which to have the substrate of opaque layer 408 relative to
The situation of X and Y-axis line misalignment.Assuming that orientation be it is known, then its can with measure be used for together with marginal position it is correctly fixed
Position exposes the window 410 of upper layer label 402.
Other than the position of substrate center, if the diameter of substrate seem the first and second marginal position measured values it
Between change, then can calculate the zoom factor along X and Y-direction.The zoom factor also can be applied to calculate the position of overlay mark
It sets.As described above, adjustable and calibrating position measured value in the edge region can be by serving as a contrast with correction if necessary
Change caused by physics and chemical process of the bottom between marginal position measuring process.Therefore, system can distinguish substrate dimension
Real variation, and as fringe region processing part caused by edge apparent motion.Assuming that processing is in its effect
Reasonably consistency, can predict and correct apparent motion.Feedback can be provided to improve the prediction for foreign substrates.
Figure 10 shows the measurement of marginal position at left-hand side (west) endpoint of the substrate in Fig. 9.It can be in various ways
Carry out the working process of captured images.Only for example, it is assumed that capture continuous non-overlapping images frame 1002 in Figure 10.
In each frame, 1004 break-through of lines represents the bright areas at edge, to refer to Fig. 6 manner discussed above.In independent image
After having disposed lines in frame, processor 606 can be with matched curve 1006, as the endpoint location (xw, yw) for calculating edge
Mode.As described above, the visual field showed in each frame can be less than 1mm, it is alternatively less than half millimeter, and therefore captured
The number of frame can be much larger than shown schematically in.Frame can be captured, for example, with the rate of 25 frame per second.Depending on aperture
The form of device, wherein angular selectivity camera is used, it can be around entire periphery or only in north, south, east and west region
Middle capture frame.
Figure 11 shows a kind of method that orientation is determined above by reference to described in Fig. 9.In this example, substrate has and is formed
Notch 1100 in its edge, as leading mark.Picture frame 1102, the peak including notch are captured around periphery.Such as put
Shown in big detail view, bright areas of the matched curve 1106 (such as parabola) into associated frame, and according to being fitted
The parameter of curve calculates the numerical value of directional angle θ.
Figure 12 shows the alternative approach for based on other sensors data applicable in lithographic equipment and measuring orientation.
Namely, if desired, then the measurement for the marginal position measured value that different sensors are oriented can be used.As one
Height sensor LS described in the explanation of example, figure 1 above and Fig. 2 determines the height change across substrate.Substrate has wherein
Have in several layers of the situation that experienced patterning and chemical/physical processing, the grid in independent device field usually can be distinguished
Pattern (tube core) is as the periodic feature in height map.By using the average high degree in substantially entire substrate
According to can identify in the amplification plan view by Figure 12 that dotted line those of shows linear character.Can be by how knowing these
The pattern applied in front layer therewith is associated and calculates directional angle θ.
Because the method for Figure 12 is not dependent in the notched areas of periphery edge measurement position at any angle, because
This its can be especially suitable for following situation, wherein edge sensor 412 is the angle for including Second Type aperture arrangement 624b
Spend selective camera.Those methods shown in such as Figure 11 and Figure 12 can be applied in combination, and determine the accurate of orientation to improve
Degree and/or versatility.
In summary, it has been shown that can how using edges of substrate relative position information and measured value and indirectly
Measure hide feature such as mark, the position of tube core and superstructure.Depending on hardware present in lithographic equipment, can need
Seldom or modification to existing hardware is not needed.It can be to avoid the demand for expensive additional alignment label manufacturing step.
How shown further can include angular selectivity optical system and be used to accurately survey in the camera
Measure the position of edges of substrate.The accuracy realized in the method can be enough, because conventional tactful alignment mark becomes superfluous
It is remaining, and coarse alignment is based entirely on measuring position and carrying out for edges of substrate.It is further noted that the angular-sensitive camera can be with
It is already present in the sensing device of lithographic equipment and/or can be obtained by the simple modification of those devices.
While specific embodiments of the invention have been described above, it should know to practice other than such as described
The present invention.
Although the exemplary structure that has been described as label is special designing and the light formed for position measurement purpose
Grid structure, in other embodiments, can in the structure of the funtion part of device formed on substrate measurement position.It is many
Device has well-regulated, grating-like structure.Simultaneously failed call has been for term " label " and " optical grating construction " as used in this
Performed measurement distinguishingly provides structure.The opaque layer referred to is not that can be marked and interrupt flag by directly observing
The unique type superstructure of the measurement of position.
Hardware is measured with position and realizes suitable structural union on substrate and patterning apparatus, and embodiment can be with
Including a kind of computer program, the one or more for implementing the machine readable instructions of measurement method of types described above is contained
Sequence is to obtain the information about the mark position covered by superstructure.Photoetching process.The computer program can be such as
Processor 606 by being exclusively used in the purpose is equal and executes, or is integrated in the control unit LACU of Fig. 1.Tool can also be provided
There is the data storage medium (such as semiconductor memory, disk or CD) for the computer program being stored therein.
Although above for having been done using the embodiment of the present invention with specific reference to answering in the context of optical lithography
This knows that the present invention can be used for other application, such as imprint lithography, and wherein context allow, be not limited to optics light
It carves.Topological structure in imprint lithography in patterning apparatus defines pattern formed on a substrate.Patterning apparatus is opened up
Flutterring structure can squeeze into the resist layer for being applied to substrate, solid by applying electromagnetic radiation, heat, pressure or combinations thereof
The resist on substrate is changed.It will be patterned into device after resist solidification to remove resist and leave pattern wherein.
Term " radiation " as used herein and " wave beam " include all types electromagnetic radiation.(example is radiated including ultraviolet (UV)
As have for or about 365,355,248,193,157 or 126nm wavelength) and extreme ultraviolet (EUV) radiate (such as in 1-
Wavelength within the scope of 100nm) and the particle beams such as ion beam or electron beam.The implementation of scatterometer and other inspection equipment can
To carry out in UV the and EUV wavelength using appropriate source, and the disclosure is defined in absolutely not the system using IR and visible radiation.
Wherein context allows, and term " lens " can be related to any one of various types optical component or combine,
Including refraction, reflection, magnetism, electromagnetism and electrostatic optics part.Reflection component can be used for work in UV and/or EUV range
Equipment.
Range and range of the invention should not be so limited to any of above exemplary embodiment, but should be according only to following power
Benefit requires the equivalent form with them and limits.
Claims (15)
1. a kind of method for positioning object construction on substrate, label are covered by superstructure, which comprises
(a) relative position information is provided, the relative position information limit the label, relative to one of the substrate or
The position of multiple marginal portions, the relative position information have been defined before forming the superstructure；
(b) after forming the superstructure, the position of the marginal portion is measured；And
(c) based on the position of the marginal portion of measurement in step (b) and the relative position provided in step (a)
Information obtains the position of the object construction；
Wherein in the one or both in step (a) and step (b), the fringe region of the substrate is obtained by using camera
Image, measure the position of the marginal portion, and
Wherein the optical system of the camera is angular selectivity, thus one with specific bevel angle of the fringe region
Divide and is enhanced in described image.
2. according to the method described in claim 1, further comprising step:
(d) using the position of object construction obtained, a part of the superstructure is removed with the exposure object construction.
3. method according to claim 1 or 2, wherein the step (b) further comprises determining determining for the substrate
To and the position of the acquisition object construction of the step (c) in step (c) in use identified orientation,
The orientation for the pattern being wherein distributed by identification across the substrate, measures the orientation of the substrate.
4. according to the method described in claim 3, wherein, being tied in the topology that the height by measurement across the substrate surface obtains
Be distributed pattern is identified in structure variation.
5. the method according to any one of precedent claims, wherein step (a) includes:
(a1) before forming the object construction, the position of the marginal portion is measured；And
(a2) at the position that the measured position relative to the marginal portion of the substrate limits, the target knot is formed
Structure.
6. method according to claim 1 to 4, wherein step (a) includes:
(a1) after forming the object construction but before forming the superstructure, the marginal portion is measured
Position, and measure the position of the object construction；And
(a2) based on the position surveyed in step (a1), the relative position information is recorded with use subsequent in step (c).
7. a kind of equipment for positioning object construction on substrate, the equipment include:
Storage device, the storage device limit label, opposite for storing relative position information, the relative position information
In the position of one or more marginal portions of the substrate；
Marginal position sensor, the marginal position sensor can be used to measure the position of the marginal portion；And
Processor, the processor are arranged for measured position based on the marginal portion and in the storage device
The relative position information provided calculates the position for obtaining the object construction；
Wherein the marginal position sensor includes camera, and the camera can be used to obtain the fringe region of the substrate
Image, the and wherein optical system of the camera is angular selectivity, thus the fringe region, there is specific bevel angle
A part in described image be enhanced.
8. equipment according to claim 7, wherein the optical system of the camera includes angular selectivity aperture dress
It sets, the angular selectivity aperture arrangement is arranged for transmitting the ray reflected from the Waffer edge with predetermined angular.
9. equipment according to claim 7 or 8, wherein the marginal position sensor can be used in superstructure
When covering the object construction, the position of the marginal portion is measured, and wherein the equipment further comprises position sensing
Device, the position sensor can be used to after a part for having removed the superstructure, be based on the edge part
The measured position divided and the obtained position of the relative position information provided in the storage device are compared, more accurately
Ground measures the position of the object construction.
10. equipment according to claim 9, wherein the camera is formed for more accurately measuring the object construction
Position the position sensor a part.
11. a kind of for applying the lithographic equipment of pattern to substrate, the lithographic equipment includes appointing according in claim 7 to 10
Equipment and controller described in one, the controller are used for the position being computed using the object construction to control
It is applied to the positioning of one or more patterns of the substrate.
12. a kind of for applying the lithographic equipment of pattern to substrate, the lithographic equipment includes appointing according in claim 7 to 10
Equipment and controller described in one, the controller are used for the measured position of the marginal portion using the substrate
To control the positioning for the pattern for limiting the object construction.
13. a kind of method for the position for measuring substrate, wherein the image of the fringe region of the substrate is obtained using camera,
Wherein the optical system of the camera is angular selectivity, thus the fringe region, a part with specific bevel angle
It is enhanced in described image.
14. a kind of equipment for measuring the position of substrate, the equipment include camera, the camera can be used to obtain institute
The image of the fringe region of substrate is stated, wherein the optical system of the camera is angular selectivity, thus the fringe region
, a part with specific bevel angle is enhanced in described image.
15. a kind of computer program product including machine readable instructions, the machine readable instructions are used for so that programmable place
Reason device controls the execution of method according to any one of claim 1 to 6.
Applications Claiming Priority (3)
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| EP16174142.6 | 2016-06-13 | ||
| EP16174142 | 2016-06-13 | ||
| PCT/EP2017/063252 WO2017215924A1 (en) | 2016-06-13 | 2017-06-01 | Methods and apparatus for determining the position of a target structure on a substrate, methods and apparatus for determining the position of a substrate |
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| Publication Number | Publication Date |
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| CN109313405A true CN109313405A (en) | 2019-02-05 |
| CN109313405B CN109313405B (en) | 2021-09-24 |
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| CN201780036588.8A Active CN109313405B (en) | 2016-06-13 | 2017-06-01 | Method and device for determining the position of a target structure on a substrate, method and device for determining the position of a substrate |
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| US (1) | US10444647B2 (en) |
| JP (1) | JP6896771B2 (en) |
| KR (1) | KR102189687B1 (en) |
| CN (1) | CN109313405B (en) |
| NL (1) | NL2019007A (en) |
| WO (1) | WO2017215924A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI730799B (en) * | 2020-06-04 | 2021-06-11 | 力晶積成電子製造股份有限公司 | Method of manufacturing image sensor and alignment mark structure |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10664714B2 (en) * | 2016-12-21 | 2020-05-26 | Rudolph Technologies, Inc. | Substrate handling and identification mechanism |
| WO2019149586A1 (en) * | 2018-01-30 | 2019-08-08 | Asml Netherlands B.V. | Method of patterning at least a layer of a semiconductor device |
| KR102270936B1 (en) | 2019-06-17 | 2021-07-01 | 세메스 주식회사 | Substrate processing method and substrate processing apparatus |
| JP7446131B2 (en) * | 2020-03-12 | 2024-03-08 | キヤノン株式会社 | Detection device, exposure device, and article manufacturing method |
| JP7587359B2 (en) * | 2020-06-23 | 2024-11-20 | キヤノン株式会社 | Alignment apparatus, method for determining position of mark, program, lithography apparatus, and article manufacturing method |
| KR102728039B1 (en) * | 2021-12-17 | 2024-11-07 | 세메스 주식회사 | Apparatus for Wafer Placement Teaching and Method for Teaching Wafers |
| KR102750976B1 (en) * | 2023-09-25 | 2025-01-09 | (주) 오로스테크놀로지 | Overlay Measurement Device, Focus Control Method of Overlay Measurement Device for Tool-induced Shift Measurement, and Focus Control Program of Overlay Measurement Device for Tool-induced Shift Measurement |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298725A (en) * | 1985-10-25 | 1987-05-08 | Canon Inc | Signal detecting device |
| JPH09297408A (en) * | 1996-05-08 | 1997-11-18 | Nikon Corp | Prealignment device |
| CN101443653A (en) * | 2006-05-09 | 2009-05-27 | 株式会社尼康 | Edge inspection apparatus |
| CN103107113A (en) * | 2011-11-14 | 2013-05-15 | Spts科技有限公司 | Etching apparatus and methods |
| CN105652611A (en) * | 2014-11-28 | 2016-06-08 | 佳能株式会社 | Position determining device, position determining method, lithographic apparatus, and method for manufacturing object |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5987306A (en) * | 1982-11-10 | 1984-05-19 | Nippon Kogaku Kk <Nikon> | Edge detector |
| US5648854A (en) * | 1995-04-19 | 1997-07-15 | Nikon Corporation | Alignment system with large area search for wafer edge and global marks |
| US5739913A (en) * | 1996-08-02 | 1998-04-14 | Mrs Technology, Inc. | Non-contact edge detector |
| EP0906590B1 (en) | 1997-03-07 | 2003-08-27 | ASML Netherlands B.V. | Lithographic projection apparatus with off-axis alignment unit |
| JP3823805B2 (en) * | 2001-10-30 | 2006-09-20 | ウシオ電機株式会社 | Exposure equipment |
| JP4566798B2 (en) | 2005-03-30 | 2010-10-20 | 東京エレクトロン株式会社 | Substrate positioning device, substrate positioning method, program |
| WO2007129691A1 (en) * | 2006-05-09 | 2007-11-15 | Nikon Corporation | End section inspecting apparatus |
| US7486878B2 (en) | 2006-09-29 | 2009-02-03 | Lam Research Corporation | Offset correction methods and arrangement for positioning and inspecting substrates |
| JPWO2008139735A1 (en) * | 2007-05-14 | 2010-07-29 | 株式会社ニコン | Surface inspection apparatus and surface inspection method |
| JP4897573B2 (en) * | 2007-05-30 | 2012-03-14 | 株式会社神戸製鋼所 | Shape measuring device and shape measuring method |
| US7977123B2 (en) * | 2009-05-22 | 2011-07-12 | Lam Research Corporation | Arrangements and methods for improving bevel etch repeatability among substrates |
| EP2339331A1 (en) * | 2009-12-23 | 2011-06-29 | Nanda Technologies GmbH | Inspection and positioning systems and methods |
| TWI532116B (en) | 2010-04-11 | 2016-05-01 | 肯提克有限公司 | Method and system for wafer registration |
| US20110317003A1 (en) * | 2010-06-02 | 2011-12-29 | Porat Roy | Method and system for edge inspection using a tilted illumination |
| DE102012101301B4 (en) | 2012-02-17 | 2014-11-06 | Kocos Automation Gmbh | Device for non-contact edge profile determination on a thin disc-shaped object |
-
2017
- 2017-06-01 JP JP2018562371A patent/JP6896771B2/en active Active
- 2017-06-01 CN CN201780036588.8A patent/CN109313405B/en active Active
- 2017-06-01 US US16/307,512 patent/US10444647B2/en active Active
- 2017-06-01 NL NL2019007A patent/NL2019007A/en unknown
- 2017-06-01 KR KR1020187038062A patent/KR102189687B1/en active Active
- 2017-06-01 WO PCT/EP2017/063252 patent/WO2017215924A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298725A (en) * | 1985-10-25 | 1987-05-08 | Canon Inc | Signal detecting device |
| JPH09297408A (en) * | 1996-05-08 | 1997-11-18 | Nikon Corp | Prealignment device |
| CN101443653A (en) * | 2006-05-09 | 2009-05-27 | 株式会社尼康 | Edge inspection apparatus |
| CN103107113A (en) * | 2011-11-14 | 2013-05-15 | Spts科技有限公司 | Etching apparatus and methods |
| CN105652611A (en) * | 2014-11-28 | 2016-06-08 | 佳能株式会社 | Position determining device, position determining method, lithographic apparatus, and method for manufacturing object |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI730799B (en) * | 2020-06-04 | 2021-06-11 | 力晶積成電子製造股份有限公司 | Method of manufacturing image sensor and alignment mark structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190013988A (en) | 2019-02-11 |
| NL2019007A (en) | 2017-12-20 |
| KR102189687B1 (en) | 2020-12-14 |
| US10444647B2 (en) | 2019-10-15 |
| WO2017215924A1 (en) | 2017-12-21 |
| CN109313405B (en) | 2021-09-24 |
| JP6896771B2 (en) | 2021-06-30 |
| JP2019523905A (en) | 2019-08-29 |
| US20190219936A1 (en) | 2019-07-18 |
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