CN109306456A - Cathode electromagnetic field device and filming equipment - Google Patents
Cathode electromagnetic field device and filming equipment Download PDFInfo
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- CN109306456A CN109306456A CN201811211285.8A CN201811211285A CN109306456A CN 109306456 A CN109306456 A CN 109306456A CN 201811211285 A CN201811211285 A CN 201811211285A CN 109306456 A CN109306456 A CN 109306456A
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- 230000005672 electromagnetic field Effects 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 48
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 230000008859 change Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000007733 ion plating Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of cathode electromagnetic field device, for filming equipment, filming equipment includes the substrate to be plated being oppositely arranged and target, it is target surface that target, which is defined, close to the surface of substrate to be plated, cathode electromagnetic field device includes multiple first electromagnetic coils for being set to side of the target far from substrate to be plated, the pole orientation of each first electromagnetic coil is not orthogonal to surface of the target far from substrate to be plated, and multiple first electromagnetic coils are coupled out the contrary arch magnetic field of two magnetic lines of force in target surface.The filming equipment of the above-mentioned cathode electromagnetic field device of application is also provided.The cathode electromagnetic field device and filming equipment, multiple first electromagnetic coils for being not orthogonal to surface of the target far from substrate to be plated by the way that pole orientation is arranged, can construct out gentler arch magnetic field, be conducive to improve target utilization.
Description
Technical field
The present invention relates to coat preparing technology field more particularly to a kind of cathode electromagnetic field device and apply the cathode electromagnetism
The filming equipment of field device.
Background technique
Magnetic field, which is added, for the cathode of arc ion plating film device and magnetic-controlled sputtering coating equipment has become the current side of industry
Method.Field controllable spots moving speed and track are added to the cathode of arc ion plating film device, to reduce drop；To magnetic control
The cathode addition magnetic field of sputtering coating equipment then can control ionization region, to improve ionization level.
The advantages of arc ion plating membrane technology is binding force height, and film layer densification hardness is high, the disadvantage is that drop insertion can be generated
Coating influences coating life.Numerous studies prove that addition magnetic field can accelerate spots moving speed, reduce drop and generate, arc spot fortune
Dynamic speed is mainly determined by magnetic field cross stream component.
The characteristics of motion of arc spot is deferred to: (1) acute angle rule: arc spot drifts about towards the acute angle direction of the magnetic line of force and target surface；
(2) anti-Ampere force movement: arc spot is moved along the opposite direction of Ampere force, and movement velocity increases with magnetic field strength and accelerated.
The advantages of magnetron sputtering technology is the smooth dripless of film layer；The disadvantage is that ionization level is low, cause deposition efficiency compared with
It is low.Arch magnetic field is constructed near sputtering target material, electronics is bound by front of target, and electronics collides with Ar atom, ionization
Ar out+；Ar+Target is bombarded after electric field acceleration, is sputtered on atom or molecule deposition to workpiece.Magnetically confined target surface is electric nearby
The ability of son is strong, the Ar of the region impact ionization+It is more, and then there are more ion bombardment targets to generate sputtering, improve deposition
Efficiency.
Magnetic mirror theory is deferred in magnetic confinement, i.e., in centrosymmetric horizontal arch magnetic field, electronics is moved along runway, then is being encircleed
It is generated in shape magnetic field as the subreflexive left and right of mirror moves back and forth.
According to above-mentioned spots moving and magnetic mirror rule, traditional cathode electromagnetic field device generallys use Fig. 1 and shown in Fig. 2
Design method, the design method generate magnetic field with the opposite polarity three groups of magnet 3 in both sides using intermediate, and the magnetic pole of each magnet 3 hangs down
Directly in a surface of target, in the surface construction arch magnetic field, the magnetic line of force 4 is distributed as shown in figure 3, magnetic field strength and position shape are fixed
It is constant.
For arc ion plating membrane technology, corresponded to as shown in Figure 1, arc spot 5 can drift about to converge at the top of arch magnetic field
Target surface region, magnetic field strength cross stream component Bx is maximum herein, and 5 movement velocity of arc spot can be accelerated by increasing magnetic field strength at this, be subtracted
Few drop, but 5 moving region of arc spot excessively concentrated keeps 1 ablation of position target serious, consumes larger；Arch magnetic field edge
For arc spot 5 because being drifted away from, position consumption is less.
For magnetron sputtering technology, as shown in Fig. 2, corresponding target surface regional Electronic 6 is dense at the top of arch magnetic field
Opposite highest is spent, therefore the target 1 at this is bombarded the most serious, arch field edge 6 concentration of electronics are relatively low, target
1 is few by ion bombardment number.It can be seen that two kinds of technology differences, but its target 1 is used for a long time under such magnetic field, V can all occurs
The groove of type causes 1 utilization rate of target low.
In order to solve the above problem, the gentler arch magnetic field in top is constructed to widen the track of spots moving, improves target
Utilization rate becomes an important research direction of industry cathode design.
Summary of the invention
The present invention provides a kind of cathode electromagnetic field device, is used for filming equipment, the filming equipment includes being oppositely arranged
Substrate to be plated and target, defining the target close to the surface of the substrate to be plated is target surface, the cathode electromagnetic field device packet
Multiple first electromagnetic coils for being set to side of the target far from the substrate to be plated are included, each first electromagnetic coil
Pole orientation is not orthogonal to surface of the target far from the substrate to be plated, and multiple first electromagnetic coils are in the target surface
It is coupled out the contrary arch magnetic field of two magnetic lines of force.
The present invention also provides the filming equipments of the above-mentioned cathode electromagnetic field device of application, which includes being oppositely arranged
Substrate to be plated and target, the cathode electromagnetic field device are set to the target far from the substrate side to be plated.
It is separate to be not orthogonal to target by setting pole orientation for cathode electromagnetic field device and filming equipment provided by the invention
Multiple first electromagnetic coils on the surface of the substrate to be plated, can construct out gentler arch magnetic field, be conducive to improve target
Utilization rate.
Detailed description of the invention
Fig. 1 is that the target under the action of the cathode electromagnetic field device of traditional arc ion plating film device etches schematic diagram.
Fig. 2 is that the target under the action of the cathode electromagnetic field device of traditional magnetic-controlled sputtering coating equipment etches schematic diagram.
Fig. 3 is the schematic diagram of the Distribution of Magnetic Field of traditional cathode electromagnetic field device.
Fig. 4 is the structural schematic diagram using the filming equipment of the cathode electromagnetic field device of first embodiment of the invention.
Fig. 5 is the magnetic line of force distribution schematic diagram of cathode electromagnetic field device shown in Fig. 4.
Fig. 6 is the angle of the magnetic line of force shown in fig. 5 and target surface with the change curve and biography of the height of the magnetic line of force and target surface
The angle of the magnetic line of force of the cathode electromagnetic field device of system and target surface with the height of the magnetic line of force and target surface change curve.
Fig. 7 is that the target under the action of cathode electromagnetic field device shown in Fig. 4 etches schematic diagram.
Fig. 8 is the structural schematic diagram using the filming equipment of the cathode electromagnetic field device of second embodiment of the invention.
Fig. 9 is the magnetic line of force distribution schematic diagram of cathode electromagnetic field device shown in Fig. 8.
Figure 10 is the angle of the magnetic line of force shown in Fig. 9 and target surface with the change curve and biography of the height of the magnetic line of force and target surface
The angle of the magnetic line of force of the cathode electromagnetic field device of system and target surface with the height of the magnetic line of force and target surface change curve.
Figure 11 is the structural schematic diagram using the filming equipment of the cathode electromagnetic field device of third embodiment of the invention.
Figure 12 is the magnetic line of force distribution schematic diagram of cathode electromagnetic field device shown in Figure 11.
Figure 13 be the magnetic line of force and target surface shown in Figure 12 angle with the magnetic line of force and target surface height change curve and
The angle of the magnetic line of force of traditional cathode electromagnetic field device and target surface with the height of the magnetic line of force and target surface change curve.
Main element symbol description
The present invention that the following detailed description will be further explained with reference to the above drawings.
Specific embodiment
The attached drawing in the embodiment of the present invention will be connected below, technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.Obviously, the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
It should be noted that it can be to be directly to when a component is considered as " connection " another component
Another component can exist simultaneously the component being centrally located.When a component is considered as " setting exists " another group
Part, it can be to be to be set up directly on another component or can exist simultaneously the component being centrally located.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
Body embodiment purpose, it is not intended that in limitation the present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
First embodiment
Referring to Fig. 4, Fig. 4 is the filming equipment 100 using the cathode electromagnetic field device 10 of first embodiment of the invention
Structural schematic diagram.The filming equipment 100 includes the substrate to be plated 12 being oppositely arranged and target 11, defines target 11 close to base to be plated
The surface at bottom 12 is target surface 11a.Filming equipment 100 can be arc coating deposition equipment or magnetic-controlled sputtering coating equipment.
Cathode electromagnetic field device 10 includes multiple first electromagnetic wires for being set to side of the target 11 far from substrate 12 to be plated
Circle 17, the pole orientation of each first electromagnetic coil 17 are not orthogonal to surface of the target 11 far from substrate 12 to be plated, multiple first electricity
Magnetic coil 17 is coupled out the contrary arch magnetic field of two magnetic lines of force 14 in target surface 11a.Arch magnetic field as described herein refers to
The magnetic line of force in the magnetic field that multiple first electromagnetic coils 17 are coupled out above target surface 11a is domed.
The cathode electromagnetic field device 10 and filming equipment 100, by be arranged pole orientation be not orthogonal to target 11 far to
Multiple first electromagnetic coils 17 for plating the surface of substrate 12, can construct out gentler arch magnetic field, be conducive to improve target 11
Utilization rate.
In the present embodiment, as shown in figure 4, table of every one first electromagnetic coil 17 perpendicular to target 11 far from substrate 12 to be plated
Face interval setting, it is remote that the pole orientation (being parallel to dotted line as shown in Figure 4) of every one first electromagnetic coil 17 is parallel to target 11
Surface from substrate 12 to be plated.Each arch magnetic field is coupled by two or more first electromagnetic coils 17 and is generated, and generates one
Every one first electromagnetic coil 17 in a arch magnetic field is wound on an independent iron core 18, strong with the magnetic field for improving arch magnetic field
Degree.The material of iron core 18 is permeability magnetic material.In other embodiments, generate an arch magnetic field two or more first
Electromagnetic coil 17 is all wound on the same iron core 18.In another embodiment, each arch magnetic field can also be by single first
Electromagnetic coil 17 generates, and the quantity of the first electromagnetic coil 17 is two at this time, and every one first electromagnetic coil 17 is wound in an iron
On core 18.
In the present embodiment, 11 width of target is 180mm, and the width of the first electromagnetic coil 17 is 15mm.Every one first electromagnetism
Coil 17 and the same central axes target surface 11a.First electromagnetic coil 17 includes for coupling the first electromagnetism for generating an arch magnetic field
Coil L1 is with the first electromagnetic coil L2 and for coupling the first electromagnetic coil R1 and the first electromagnetism that generate another arch magnetic field
Coil R2.First electromagnetic coil L1 and the first electromagnetic coil L2 is at a distance of 30mm, the first electromagnetic coil R1 and the first electromagnetic coil R2
At a distance of 30mm, the first electromagnetic coil L2 and the first electromagnetic coil R2 at a distance of 60mm.It, can setting according to magnetic field in other embodiments
Meter demand adjusts the relative position between the first electromagnetic coil 17 and is passed through the size of current etc. of each first electromagnetic coil 17.
Table 1
Table 1 is the power current parameter table of each first electromagnetic coil in cathode electromagnetic field device 10 shown in Fig. 4.Each first electricity
Magnetic coil 17 is powered by current parameters shown in table 1, generates the magnetic field on parallel surface of the target 11 far from substrate 12 to be plated of magnetic pole.Figure
5 be 14 distribution schematic diagram of the magnetic line of force of cathode electromagnetic field device 10 shown in Fig. 4.Fig. 6 is the magnetic line of force 14 shown in fig. 5 and target surface
The angle of 11a is with the magnetic line of force 14 and the change curve of the height of target surface 11a and the magnetic force of traditional cathode electromagnetic field device 10
The angle of line 14 and target surface 11a with the magnetic line of force 14 and the height of target surface 11a change curve.At the top of arch magnetic field in corresponding diagram
The position that angle is 0 °.In conjunction with Fig. 5 with Fig. 6 it is found that compare traditional cathode electromagnetic field device 10, the arch magnetic field of the embodiment
Apex angles variation is more gentle.Fig. 7 is that the target 11 under the action of cathode electromagnetic field device 10 shown in Fig. 4 etches signal
Figure.As shown in fig. 7, the consumption of the region corresponding target surface 11a is average at the top of arch magnetic field, 11 utilization rate of target is improved.
Second embodiment
Referring to Fig. 8, Fig. 8 is the filming equipment 200 using the cathode electromagnetic field device 20 of second embodiment of the invention
Structural schematic diagram.The filming equipment 200 includes the substrate to be plated 12 being oppositely arranged and target 11, defines target 11 close to base to be plated
The surface at bottom 12 is target surface 11a.Filming equipment 200 can be arc coating deposition equipment or magnetic-controlled sputtering coating equipment.Cathode electromagnetism
Field device 20 and the cathode electromagnetic field device 10 of first embodiment of the invention are essentially identical, include be set to target 11 far to
Multiple first electromagnetic coils 17 of the side of substrate 12 are plated, it is remote that the pole orientation of each first electromagnetic coil 17 is not orthogonal to target 11
Surface from substrate 12 to be plated, multiple first electromagnetic coils 17 are coupled out two contrary arches of the magnetic line of force 14 in target surface 11a
Shape magnetic field.
The difference of the cathode electromagnetic field device 20 and the cathode electromagnetic field device 10 of first embodiment of the invention is: first
In embodiment, every one first electromagnetic coil 17 is arranged perpendicular to target 11 far from the surface interval of substrate 12 to be plated, and every one first
The pole orientation of electromagnetic coil 17 is parallel to surface of the target 11 far from substrate 12 to be plated；And in the present embodiment, every one first electricity
Magnetic coil 17 and target 11 form an angle the setting of the interval α far from the surface of substrate 12 to be plated, every one first electromagnetic coil 17
Pole orientation and target 11 form an angle α far from the surface of substrate 12 to be plated.
In the present embodiment, form an angle α's far from the surface of substrate 12 to be plated by setting pole orientation and target 11
Multiple first electromagnetic coils 17 can construct out gentler arch magnetic field, be conducive to improve 11 utilization rate of target.
In an embodiment, the pole orientation of every one first electromagnetic coil 17 and surface of the target 11 far from substrate 12 to be plated
Angle α range be 0 to 45 °.
In the present embodiment, surface of the pole orientation of the first electromagnetic coil 17 with target 11 far from substrate 12 to be plated is at certain
Angle α is 10 °.11 width of target is 180mm, and the width of the first electromagnetic coil 17 is 15mm.Every one first electromagnetic coil 17 with
The same central axes target surface 11a.First electromagnetic coil 17 include for couple generate an arch magnetic field the first electromagnetic coil L1 with
First electromagnetic coil L2 and for coupling the first electromagnetic coil R1 and the first electromagnetic coil R2 that generate another arch magnetic field.The
One electromagnetic coil L1 and the first electromagnetic coil L2 at a distance of 35mm, the first electromagnetic coil R1 and the first electromagnetic coil R2 at a distance of 35mm,
First electromagnetic coil L2 and the first electromagnetic coil R2 are at a distance of 60mm.In other embodiments, it can be adjusted according to the design requirement in magnetic field
It saves the relative position between the first electromagnetic coil 17 and is passed through the size of current etc. of each first electromagnetic coil 17.
Each first electromagnetic coil 17 is the same with first embodiment, is powered by current parameters shown in table 1.After energization, each first
17 magnetic pole of electromagnetic coil and target 11 form an angle α far from the surface of substrate 12 to be plated.Fig. 9 is cathode electromagnetism shown in Fig. 8
14 distribution schematic diagram of the magnetic line of force of field device 20.Figure 10 is the angle of the magnetic line of force 14 and target surface 11a shown in Fig. 9 with the magnetic line of force
The angle of the change curve of the height of 14 and target surface 11a and the magnetic line of force 14 of traditional cathode electromagnetic field device 10 and target surface 11a
With the change curve of the magnetic line of force 14 and the height of target surface 11a.In conjunction with Fig. 9 with Figure 10 it is found that comparing traditional cathode electromagnetic field
The arch magnetic field apex angles variation of device 20, the embodiment is more gentle.In this way, corresponding target surface 11a at the top of arch magnetic field
Region consumption is average, is conducive to improve 11 utilization rate of target.
3rd embodiment
Figure 11 is please referred to, Figure 11 is the filming equipment 300 using the cathode electromagnetic field device 30 of third embodiment of the invention
Structural schematic diagram.The filming equipment 300 includes the substrate to be plated 12 being oppositely arranged and target 11, defines target 11 close to be plated
The surface of substrate 12 is target surface 11a.Filming equipment 300 can be arc coating deposition equipment or magnetic-controlled sputtering coating equipment.Cathode electricity
Magnetic field device 30 and the cathode electromagnetic field device 10 of first embodiment of the invention are essentially identical, separate including being set to target 11
Multiple first electromagnetic coils 17 of the side of substrate 12 to be plated, the pole orientation of each first electromagnetic coil 17 are not orthogonal to target 11
Surface far from substrate 12 to be plated, it is contrary that multiple first electromagnetic coils 17 in target surface 11a are coupled out two magnetic lines of force 14
Arch magnetic field.
The difference of the cathode electromagnetic field device 30 and the cathode electromagnetic field device 10 with first embodiment of the invention is: the
In one embodiment, cathode electromagnetic field device 10 only includes that pole orientation is parallel to the more of surface of the target 11 far from substrate 12 to be plated
A first electromagnetic coil 17；And in the present embodiment, cathode electromagnetic field device 30 include pole orientation be parallel to target 11 far to
Multiple first electromagnetic coils 17 for plating the surface of substrate 12 (are only schematically drawn two the first electromagnetic coils, respectively in Figure 11
First electromagnetic coil L and the first electromagnetic coil R), it further include the second electromagnetic coil 19 around multiple first electromagnetic coils 17, the
Surface of the pole orientation of two electromagnetic coils 19 perpendicular to target 11 far from substrate 12 to be plated, the second electromagnetic coil 19 form linking
The bend magnetic field in the straight way magnetic field that multiple first electromagnetic coils 17 are formed.In this way, if the filming equipment 300 sets for arc coating deposition
It is standby, when which can increase arc coating deposition, movement velocity of the arc spot 15 at the both ends of target 11.If the filming equipment 300
For magnetic-controlled sputtering coating equipment, after which may make the electronics 16 of magnetron sputtering not live through straight way magnetic field, in target
The constraint in the both ends evolution magnetic field of material 11.
Table 2
Table 2 is the power current parameter table of each electromagnetic coil in cathode electromagnetic field device 30 shown in Figure 11.Each electromagnetic coil is pressed
Current parameters shown in table 2 are powered, and generate the magnetic field on parallel surface of the target 11 far from substrate 12 to be plated of magnetic pole.Figure 12 is Figure 11 institute
14 distribution schematic diagram of the magnetic line of force of the cathode electromagnetic field device 30 shown.In conjunction with Figure 12 with Figure 13 it is found that comparing traditional cathode electricity
The arch magnetic field apex angles variation of magnetic field device 30, the embodiment is more gentle.In this way, corresponding target surface at the top of arch magnetic field
The consumption of the region 11a is average, is conducive to improve 11 utilization rate of target.
Embodiment of above is only used to illustrate the technical scheme of the present invention and not to limit it, although referring to better embodiment pair
The present invention is described in detail, those skilled in the art should understand that, technical solution of the present invention can be carried out
Modification or equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. a kind of cathode electromagnetic field device is used for filming equipment, the filming equipment includes the substrate to be plated being oppositely arranged and target
Material, defining the target close to the surface of the substrate to be plated is target surface, which is characterized in that the cathode electromagnetic field device includes
It is set to multiple first electromagnetic coils of side of the target far from the substrate to be plated, the magnetic of each first electromagnetic coil
Extreme direction is not orthogonal to surface of the target far from the substrate to be plated, and multiple first electromagnetic coils are in the target surface coupling
Close out the contrary arch magnetic field of two magnetic lines of force.
2. cathode electromagnetic field device as described in claim 1, which is characterized in that the pole orientation of each first electromagnetic coil
Surface with the target far from the substrate to be plated is parallel.
3. cathode electromagnetic field device as described in claim 1, which is characterized in that the pole orientation of each first electromagnetic coil
It forms an angle with the target far from the surface of the substrate to be plated, the range of the angle is 0 to 45 °.
4. cathode electromagnetic field device as described in claim 1, which is characterized in that each arch magnetic field is by two or two
First electromagnetic coil coupling described above generates.
5. cathode electromagnetic field device as claimed in claim 4, which is characterized in that generate each institute in the arch magnetic field
The first electromagnetic coil is stated to be wound on an independent iron core.
6. cathode electromagnetic field device as claimed in claim 4, which is characterized in that generate all the of arch magnetic field
One electromagnetic coil is wound on the same iron core.
7. cathode electromagnetic field device as described in claim 1, which is characterized in that each arch magnetic field is by single described the
One electromagnetic coil generates, and the quantity of first electromagnetic coil is two.
8. cathode electromagnetic field device as described in claim 1, which is characterized in that the cathode electromagnetic field device further includes surrounding
The pole orientation of second electromagnetic coil of the multiple first electromagnetic coil, second electromagnetic coil is remote perpendicular to the target
Surface from the substrate to be plated, second electromagnetic coil form the magnetic field that multiple first electromagnetic coils of linking are formed
Bend magnetic field.
9. cathode electromagnetic field device as claimed in claim 8, which is characterized in that the pole orientation of each first electromagnetic coil
It is parallel to surface of the target far from the substrate to be plated.
10. a kind of filming equipment, including the substrate to be plated being oppositely arranged and target, which is characterized in that the filming equipment also wraps
Cathode electromagnetic field device as in one of claimed in any of claims 1 to 9 is included, the cathode electromagnetic field device is set to the target
Material is far from the substrate side to be plated.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811211285.8A CN109306456A (en) | 2018-10-17 | 2018-10-17 | Cathode electromagnetic field device and filming equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811211285.8A CN109306456A (en) | 2018-10-17 | 2018-10-17 | Cathode electromagnetic field device and filming equipment |
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| CN109306456A true CN109306456A (en) | 2019-02-05 |
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| CN201811211285.8A Pending CN109306456A (en) | 2018-10-17 | 2018-10-17 | Cathode electromagnetic field device and filming equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172504A (en) * | 2019-12-27 | 2020-05-19 | 季华实验室 | A Novel Magnetron Sputtering Cathode |
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|---|---|---|---|---|
| US4162954A (en) * | 1978-08-21 | 1979-07-31 | Vac-Tec Systems, Inc. | Planar magnetron sputtering device |
| CN101358328A (en) * | 2007-12-28 | 2009-02-04 | 中国科学院金属研究所 | A Dynamically Controlled Arc Ion Plating Arc Source |
| CN102534513A (en) * | 2011-12-19 | 2012-07-04 | 东莞市汇成真空科技有限公司 | A Rectangular Planar Cathodic Arc Evaporation Source Combined with Magnetic Field |
| CN102953035A (en) * | 2012-11-02 | 2013-03-06 | 温州职业技术学院 | Multi-mode atternation coupling magnetic field assisted electrical arc ion plating deposition arc source apparatus |
| CN209081969U (en) * | 2018-10-17 | 2019-07-09 | 深圳精匠云创科技有限公司 | Cathode electromagnetic field device and filming equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172504A (en) * | 2019-12-27 | 2020-05-19 | 季华实验室 | A Novel Magnetron Sputtering Cathode |
| CN111172504B (en) * | 2019-12-27 | 2021-11-02 | 季华实验室 | A magnetron sputtering cathode |
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