CN109301423A - High Isolation Substrate Integrated Waveguide Power Divider - Google Patents
High Isolation Substrate Integrated Waveguide Power Divider Download PDFInfo
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- CN109301423A CN109301423A CN201811114314.9A CN201811114314A CN109301423A CN 109301423 A CN109301423 A CN 109301423A CN 201811114314 A CN201811114314 A CN 201811114314A CN 109301423 A CN109301423 A CN 109301423A
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- Prior art keywords
- substrate
- power divider
- integrated waveguide
- isolation
- transmission line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
The invention discloses a kind of chip integrated wave guide power rate distributors of high-isolation, chip integrated wave guide power rate distributor body including being located at upper layer medium substrate, the chip integrated wave guide power rate distributor body includes input terminal and output end, layer dielectric substrate is equipped with lossy transmission line, ground level is equipped between the upper layer medium substrate and layer dielectric substrate, the output end two sides are connected by copper needle with lossy transmission line, and copper needle passes through ground level and do not contact with ground level.Guarantee the isolation of power divider using lossy transmission line, isolation resistance is replaced using the loss characteristic of lossy transmission line, on the one hand it ensure that the isolation of power divider is unaffected, on the other hand also avoid introducing isolation resistance and bring variety of problems.
Description
Technical field
The present invention relates to power divider technical fields, more particularly to a kind of chip integrated wave guide power rate of high-isolation
Distributor.
Background technique
Power divider is a kind of important devices for constituting radio circuit, its effect is that input signal all the way is divided into two
Road or the equal or unequal output signal of multichannel energy.The parameter of evaluation power divider performance indicator has very much, main to wrap
It includes operating frequency range, bear these aspects of power bracket, return loss, insertion loss, isolation, phase difference.
Power divider has many structure type, such as lamped element, microstrip line, strip line etc..In recent years, substrate collection
At waveguide (SIW) technology by while also constantly due to it has the characteristics that high q-factor, degree easy of integration, low-loss, small size
It is applied in the design of power divider.
Isolation between tributary port is an important indicator of power divider, if from each tributary port input work
Rate can only be exported from main road port, and without that should export from other branches, this requires have enough isolations between branch.It is right
For traditional Wilkinson power divider, optimal method is guaranteed between output port using isolation resistance
Isolation.For the power divider of an one-to-two, due to the presence of resistance, loss characteristic makes defeated by a branch
The signal entered is half-wavelength with the path difference for reaching another tributary port by route by resistance, as long as therefore controlling electricity
The value of resistance, so that it may realize that two paths of signals is equal in magnitude, opposite in phase, therefore signal may not flow into another tributary port, from
And guaranteeing two branch output ends has good isolation.This thought also often has use in SIW power divider.Document [1] is just
It is to play a part of to keep high-isolation by being added to a SMD resistance between two output ports;Document [2] is then logical
Crossing and adding one in the top conductor of SIW power splitter includes the metallic channel of certain amount terminal resistance to realize high-isolation
's;Document [3] is then that the side for adding isolation resistance between the output ports is also utilized on half module substrate integrated wave guide power splitter
Method realizes high-isolation.Introducing isolation resistance has eaily advantage in circuit design, but the presence of resistance
Also it can lead to the problem of following some:
1, obvious radiation effect is had in powerful situation;
2, the planar structure of microstrip circuit is destroyed;
3, limitation of the resistance in terms of tolerance power is so that the unbearable some powerful working environments of power divider.
Due to the presence of problem above, so that whether some designers also can will load isolation resistance in design, this is asked
The broadband SIW power divider for inscribing design in range taken into consideration, such as document [4], which just allows for isolation resistance, to be destroyed
For the planar circuit structure of SIW to influence intrinsic integrated level, final choice does not add isolation resistance.
How influence in this respect is reduced while guaranteeing high-isolation, this is worth being concerned and grind in device design
Study carefully.In consideration of it, the invention proposes a kind of novel SIW power divider, which guarantees function using lossy transmission line
The isolation of rate distributor is replaced isolation resistance using the loss characteristic of lossy transmission line, on the one hand ensure that power distribution
The isolation of device is unaffected, on the other hand also avoids introducing isolation resistance and bring variety of problems.
Bibliography
Summary of the invention
In view of the above technical problems, object of the present invention is to: a kind of chip integrated wave guide power rate distribution of high-isolation is provided
Device guarantees the isolation of power divider using lossy transmission line, replaces being isolated using the loss characteristic of lossy transmission line
On the one hand resistance ensure that the isolation of power divider is unaffected, on the other hand also avoid introducing isolation resistance and band
The variety of problems come.
The technical scheme is that
A kind of chip integrated wave guide power rate distributor of high-isolation, the chip integrated wave guide power including being located at upper layer medium substrate
Rate distributor body, the chip integrated wave guide power rate distributor body include input terminal and output end, and layer dielectric substrate is set
There is lossy transmission line, ground level is equipped between the upper layer medium substrate and layer dielectric substrate, the output end two sides pass through copper
Needle is connected with lossy transmission line, and copper needle passes through ground level and do not contact with ground level.
In preferred technical solution, the input terminal uses microstrip line feed-in.
In preferred technical solution, the input terminal is matched with output end using taper.
In preferred technical solution, the output end is tuned by minor matters in parallel.
In preferred technical solution, the operating center frequency of the power divider is in 9.6GHz.
The invention also discloses a kind of design method of the chip integrated wave guide power rate distributor of high-isolation, including it is following
Step:
S01: selected upper layer and lower layer medium substrate, wherein the loss angle tangent of layer dielectric substrate is bigger than upper layer, is situated between according to lower layer
The parameter of matter substrate primarily determines the width and wire length of lossy transmission line by MATLAB according to correlation formula
S02: design chip integrated wave guide power rate distributor body;
S03: the mating structure of power splitter input terminal and output end is designed according to matching principle;
S04: power splitter structure is modeled, emulated and is optimized by 3 D electromagnetic simulation software HFSS, is optimized
Parameter.
Compared with prior art, the invention has the advantages that
The present invention guarantees the isolation of power divider using lossy transmission line, using the loss characteristic of lossy transmission line come generation
It for isolation resistance, on the one hand ensure that the isolation of power divider is unaffected, on the other hand also avoid introducing isolation electricity
It hinders and bring variety of problems.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments:
Fig. 1 is the structure chart of power divider;
Fig. 2 is power splitter upper layer birds-eye perspective;
Fig. 3 is power splitter input terminal return loss and insertion loss emulates and measured drawing;
Fig. 4 is power splitter output end return loss and isolation emulates and measured drawing;
Fig. 5 is power splitter output port phase difference measured drawing.
Specific embodiment
In order to make the objectives, technical solutions and advantages of the present invention clearer, With reference to embodiment and join
According to attached drawing, the present invention is described in more detail.It should be understood that these descriptions are merely illustrative, and it is not intended to limit this hair
Bright range.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid this is unnecessarily obscured
The concept of invention.
Embodiment:
As shown in Figure 1, a kind of loss characteristic using lossy transmission line replaces the SIW power divider of isolation resistance, including
Input terminal 11, output end 12 and SIW power divider ontology 13 carry out group using the different medium substrate of upper layer and lower layer (10,20)
At upper layer 10 is the smaller plate of loss angle tangent, and power divider is to be located at the layer.Lower layer 20 be loss angle tangent compared with
Big material, lossy transmission line 21 are located on the layer, and lossy transmission line 21 can use microstrip transmission line, so as to fill
Play loss characteristic with dividing.By 5880 plate of Rogers, (dielectric constant 2.2, loss angle tangent are upper layer medium substrate 10
0.0006) it constitutes, layer dielectric substrate 20 is made of FR4 plate (dielectric constant 4.4, loss angle tangent 0.02).Power
Distributor uses y-type structure, and input port 11 is matched with 12 mouthfuls of output end using gradual change type microstrip line.
Ground level 30 is located among two layers, and upper layer SIW power splitter is passed in 12 mouthfuls of two sides of output end by copper needle 40 and lower layer
Defeated line 21 is connected, and copper needle 40 passes through ground level 30 and do not contact with ground level 30.
Input terminal 11 uses microstrip line feed-in, and input terminal 11 is matched with output end 12 using taper.Output end 12 is by simultaneously
Connection minor matters are tuned.The operating center frequency of power divider is in 9.6GHz.It is completed by HFSS simulation optimization each to device
The final determination of portion size parameter.
The design scheme of the power divider is as follows:
Step 1: it is managed according to the mentality of designing of conventional power splitters and principle, the design experiences formula of SIW, lossy transmission line
The empirical equation of transmission matrix calculation formula, microstrip line phase constant and attenuation constant is referred to, correlation formula is derived, is utilized
MATLAB software verification replaces the microstrip transmission line length and width, microstrip transmission line medium substrate loss angle tangent of isolation resistance
The influence that the isolation of power divider is generated;
Step 2: selected suitable media substrate, the width for determining microstrip transmission line, it is public according to the correlation of step 1 by MATLAB
Formula calculates suitable wire length;
Step 3: design SIW power divider ontology;
Step 4: the mating structure of power splitter input terminal and output end is designed according to matching principle;
Step 5: it models, emulate and optimizes in 3 D electromagnetic simulation software HFSS according to parameter;
Step 6: model is exported, and making sheet simultaneously carries out experiment test.
Fig. 2 is upper layer birds-eye perspective (ground structure is transparent) of the present invention, and wherein top dielectric plate is using Rogers
5880 plates, layer dielectric plate using FR4 plate, by 3 D electromagnetic simulation software HFSS to power splitter structure into
Row modeling, emulation and optimization, obtain the optimum of each section parameter, the numerical value of all parameters is as shown in table 1.
Symbol | W_sub | L_sub | LL1 | W50 | Ltap | L50 | rs |
Numerical value (mm) | 47.9 | 105.84 | 42.29 | 3.12 | 17.42 | 13.4 | 0.5 |
Symbol | WSIW | d | s | Ls | d2 | Wtap | L1 |
Numerical value (mm) | 17.45 | 1.6 | 3 | 3 | 3 | 6.5 | 1 |
Symbol | LL2 | W | W2 | L2 | W1 | L4 | L3 |
Numerical value (mm) | 70 | 1 | 2 | 1.6 | 2 | 2 | 1.8 |
Fig. 3 is the final emulation S11 parameter of the high-isolation SIW power divider the present invention is based on lossy transmission line, S12
Parameter, S13 parameter and actual measurement S11 parameter, S12 parameter, S13 parameter in kind;As can be seen from Figure, attached in center operating frequency
The actual measurement input port return loss of close power divider, insertion loss are all in a normal range.
Fig. 4 is the final emulation S22 parameter of the high-isolation SIW power divider the present invention is based on lossy transmission line, S33
Parameter, S23 parameter and actual measurement S11 parameter, S12 parameter, S23 parameter in kind, as can be seen from Figure, the output of power divider
Reflection coefficient of port loss also has good effect, and the isolation of power divider has then been more than 25dB, with most of high-isolation function
Device is divided to compare in no way inferior, naturally certainly than not taking the power divider of quarantine measures far better.
Fig. 5 is the final measured phase difference of the high-isolation SIW power divider the present invention is based on lossy transmission line, by scheming
As can be seen that this kind design does not influence the phase difference of power divider input port.
According to measurement data as can be seen that isolation of the power divider near centre frequency microstrip transmission line work
Good effect is reached under, while the matching degree of each port is good, insertion loss also in the normal range, reaches
Purpose of design.
It should be understood that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention
Principle, but not to limit the present invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention
Covering the whole variations fallen into attached claim scope and boundary or this range and the equivalent form on boundary and is repairing
Change example.
Claims (6)
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113258241A (en) * | 2021-05-07 | 2021-08-13 | 浙江吉利控股集团有限公司 | Power divider based on substrate integrated waveguide |
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US6489859B1 (en) * | 1999-04-16 | 2002-12-03 | Mitsubishi Denki Kabushiki Kaisha | Power divider/combiner |
US7561006B2 (en) * | 2006-08-25 | 2009-07-14 | Banpil Photonics, Inc. | Low loss electrical delay line |
CN203326077U (en) * | 2013-06-27 | 2013-12-04 | 中国人民解放军理工大学 | Coplanar waveguide feed substrate integration waveguide broadband power divider |
JP2015056659A (en) * | 2013-09-12 | 2015-03-23 | 富士通セミコンダクター株式会社 | Component and circuit for output termination |
CN105609917A (en) * | 2015-11-12 | 2016-05-25 | 电子科技大学 | Waveguide radial multipath power synthesizer based on lossy network |
CN106654495A (en) * | 2016-12-19 | 2017-05-10 | 中国电子科技集团公司第二十研究所 | Filtering power divider of X wave band substrate-based integrated waveguide coaxial cavity |
-
2018
- 2018-09-25 CN CN201811114314.9A patent/CN109301423A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6489859B1 (en) * | 1999-04-16 | 2002-12-03 | Mitsubishi Denki Kabushiki Kaisha | Power divider/combiner |
US7561006B2 (en) * | 2006-08-25 | 2009-07-14 | Banpil Photonics, Inc. | Low loss electrical delay line |
CN203326077U (en) * | 2013-06-27 | 2013-12-04 | 中国人民解放军理工大学 | Coplanar waveguide feed substrate integration waveguide broadband power divider |
JP2015056659A (en) * | 2013-09-12 | 2015-03-23 | 富士通セミコンダクター株式会社 | Component and circuit for output termination |
CN105609917A (en) * | 2015-11-12 | 2016-05-25 | 电子科技大学 | Waveguide radial multipath power synthesizer based on lossy network |
CN106654495A (en) * | 2016-12-19 | 2017-05-10 | 中国电子科技集团公司第二十研究所 | Filtering power divider of X wave band substrate-based integrated waveguide coaxial cavity |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113258241A (en) * | 2021-05-07 | 2021-08-13 | 浙江吉利控股集团有限公司 | Power divider based on substrate integrated waveguide |
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