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CN109301423A - High Isolation Substrate Integrated Waveguide Power Divider - Google Patents

High Isolation Substrate Integrated Waveguide Power Divider Download PDF

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Publication number
CN109301423A
CN109301423A CN201811114314.9A CN201811114314A CN109301423A CN 109301423 A CN109301423 A CN 109301423A CN 201811114314 A CN201811114314 A CN 201811114314A CN 109301423 A CN109301423 A CN 109301423A
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CN
China
Prior art keywords
substrate
power divider
integrated waveguide
isolation
transmission line
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CN201811114314.9A
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Chinese (zh)
Inventor
刘学观
周洋
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Suzhou University
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Suzhou University
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Priority to CN201811114314.9A priority Critical patent/CN109301423A/en
Publication of CN109301423A publication Critical patent/CN109301423A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/20Design optimisation, verification or simulation
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

The invention discloses a kind of chip integrated wave guide power rate distributors of high-isolation, chip integrated wave guide power rate distributor body including being located at upper layer medium substrate, the chip integrated wave guide power rate distributor body includes input terminal and output end, layer dielectric substrate is equipped with lossy transmission line, ground level is equipped between the upper layer medium substrate and layer dielectric substrate, the output end two sides are connected by copper needle with lossy transmission line, and copper needle passes through ground level and do not contact with ground level.Guarantee the isolation of power divider using lossy transmission line, isolation resistance is replaced using the loss characteristic of lossy transmission line, on the one hand it ensure that the isolation of power divider is unaffected, on the other hand also avoid introducing isolation resistance and bring variety of problems.

Description

The chip integrated wave guide power rate distributor of high-isolation
Technical field
The present invention relates to power divider technical fields, more particularly to a kind of chip integrated wave guide power rate of high-isolation Distributor.
Background technique
Power divider is a kind of important devices for constituting radio circuit, its effect is that input signal all the way is divided into two Road or the equal or unequal output signal of multichannel energy.The parameter of evaluation power divider performance indicator has very much, main to wrap It includes operating frequency range, bear these aspects of power bracket, return loss, insertion loss, isolation, phase difference.
Power divider has many structure type, such as lamped element, microstrip line, strip line etc..In recent years, substrate collection At waveguide (SIW) technology by while also constantly due to it has the characteristics that high q-factor, degree easy of integration, low-loss, small size It is applied in the design of power divider.
Isolation between tributary port is an important indicator of power divider, if from each tributary port input work Rate can only be exported from main road port, and without that should export from other branches, this requires have enough isolations between branch.It is right For traditional Wilkinson power divider, optimal method is guaranteed between output port using isolation resistance Isolation.For the power divider of an one-to-two, due to the presence of resistance, loss characteristic makes defeated by a branch The signal entered is half-wavelength with the path difference for reaching another tributary port by route by resistance, as long as therefore controlling electricity The value of resistance, so that it may realize that two paths of signals is equal in magnitude, opposite in phase, therefore signal may not flow into another tributary port, from And guaranteeing two branch output ends has good isolation.This thought also often has use in SIW power divider.Document [1] is just It is to play a part of to keep high-isolation by being added to a SMD resistance between two output ports;Document [2] is then logical Crossing and adding one in the top conductor of SIW power splitter includes the metallic channel of certain amount terminal resistance to realize high-isolation 's;Document [3] is then that the side for adding isolation resistance between the output ports is also utilized on half module substrate integrated wave guide power splitter Method realizes high-isolation.Introducing isolation resistance has eaily advantage in circuit design, but the presence of resistance Also it can lead to the problem of following some:
1, obvious radiation effect is had in powerful situation;
2, the planar structure of microstrip circuit is destroyed;
3, limitation of the resistance in terms of tolerance power is so that the unbearable some powerful working environments of power divider.
Due to the presence of problem above, so that whether some designers also can will load isolation resistance in design, this is asked The broadband SIW power divider for inscribing design in range taken into consideration, such as document [4], which just allows for isolation resistance, to be destroyed For the planar circuit structure of SIW to influence intrinsic integrated level, final choice does not add isolation resistance.
How influence in this respect is reduced while guaranteeing high-isolation, this is worth being concerned and grind in device design Study carefully.In consideration of it, the invention proposes a kind of novel SIW power divider, which guarantees function using lossy transmission line The isolation of rate distributor is replaced isolation resistance using the loss characteristic of lossy transmission line, on the one hand ensure that power distribution The isolation of device is unaffected, on the other hand also avoids introducing isolation resistance and bring variety of problems.
Bibliography
Summary of the invention
In view of the above technical problems, object of the present invention is to: a kind of chip integrated wave guide power rate distribution of high-isolation is provided Device guarantees the isolation of power divider using lossy transmission line, replaces being isolated using the loss characteristic of lossy transmission line On the one hand resistance ensure that the isolation of power divider is unaffected, on the other hand also avoid introducing isolation resistance and band The variety of problems come.
The technical scheme is that
A kind of chip integrated wave guide power rate distributor of high-isolation, the chip integrated wave guide power including being located at upper layer medium substrate Rate distributor body, the chip integrated wave guide power rate distributor body include input terminal and output end, and layer dielectric substrate is set There is lossy transmission line, ground level is equipped between the upper layer medium substrate and layer dielectric substrate, the output end two sides pass through copper Needle is connected with lossy transmission line, and copper needle passes through ground level and do not contact with ground level.
In preferred technical solution, the input terminal uses microstrip line feed-in.
In preferred technical solution, the input terminal is matched with output end using taper.
In preferred technical solution, the output end is tuned by minor matters in parallel.
In preferred technical solution, the operating center frequency of the power divider is in 9.6GHz.
The invention also discloses a kind of design method of the chip integrated wave guide power rate distributor of high-isolation, including it is following Step:
S01: selected upper layer and lower layer medium substrate, wherein the loss angle tangent of layer dielectric substrate is bigger than upper layer, is situated between according to lower layer The parameter of matter substrate primarily determines the width and wire length of lossy transmission line by MATLAB according to correlation formula
S02: design chip integrated wave guide power rate distributor body;
S03: the mating structure of power splitter input terminal and output end is designed according to matching principle;
S04: power splitter structure is modeled, emulated and is optimized by 3 D electromagnetic simulation software HFSS, is optimized Parameter.
Compared with prior art, the invention has the advantages that
The present invention guarantees the isolation of power divider using lossy transmission line, using the loss characteristic of lossy transmission line come generation It for isolation resistance, on the one hand ensure that the isolation of power divider is unaffected, on the other hand also avoid introducing isolation electricity It hinders and bring variety of problems.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments:
Fig. 1 is the structure chart of power divider;
Fig. 2 is power splitter upper layer birds-eye perspective;
Fig. 3 is power splitter input terminal return loss and insertion loss emulates and measured drawing;
Fig. 4 is power splitter output end return loss and isolation emulates and measured drawing;
Fig. 5 is power splitter output port phase difference measured drawing.
Specific embodiment
In order to make the objectives, technical solutions and advantages of the present invention clearer, With reference to embodiment and join According to attached drawing, the present invention is described in more detail.It should be understood that these descriptions are merely illustrative, and it is not intended to limit this hair Bright range.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid this is unnecessarily obscured The concept of invention.
Embodiment:
As shown in Figure 1, a kind of loss characteristic using lossy transmission line replaces the SIW power divider of isolation resistance, including Input terminal 11, output end 12 and SIW power divider ontology 13 carry out group using the different medium substrate of upper layer and lower layer (10,20) At upper layer 10 is the smaller plate of loss angle tangent, and power divider is to be located at the layer.Lower layer 20 be loss angle tangent compared with Big material, lossy transmission line 21 are located on the layer, and lossy transmission line 21 can use microstrip transmission line, so as to fill Play loss characteristic with dividing.By 5880 plate of Rogers, (dielectric constant 2.2, loss angle tangent are upper layer medium substrate 10 0.0006) it constitutes, layer dielectric substrate 20 is made of FR4 plate (dielectric constant 4.4, loss angle tangent 0.02).Power Distributor uses y-type structure, and input port 11 is matched with 12 mouthfuls of output end using gradual change type microstrip line.
Ground level 30 is located among two layers, and upper layer SIW power splitter is passed in 12 mouthfuls of two sides of output end by copper needle 40 and lower layer Defeated line 21 is connected, and copper needle 40 passes through ground level 30 and do not contact with ground level 30.
Input terminal 11 uses microstrip line feed-in, and input terminal 11 is matched with output end 12 using taper.Output end 12 is by simultaneously Connection minor matters are tuned.The operating center frequency of power divider is in 9.6GHz.It is completed by HFSS simulation optimization each to device The final determination of portion size parameter.
The design scheme of the power divider is as follows:
Step 1: it is managed according to the mentality of designing of conventional power splitters and principle, the design experiences formula of SIW, lossy transmission line The empirical equation of transmission matrix calculation formula, microstrip line phase constant and attenuation constant is referred to, correlation formula is derived, is utilized MATLAB software verification replaces the microstrip transmission line length and width, microstrip transmission line medium substrate loss angle tangent of isolation resistance The influence that the isolation of power divider is generated;
Step 2: selected suitable media substrate, the width for determining microstrip transmission line, it is public according to the correlation of step 1 by MATLAB Formula calculates suitable wire length;
Step 3: design SIW power divider ontology;
Step 4: the mating structure of power splitter input terminal and output end is designed according to matching principle;
Step 5: it models, emulate and optimizes in 3 D electromagnetic simulation software HFSS according to parameter;
Step 6: model is exported, and making sheet simultaneously carries out experiment test.
Fig. 2 is upper layer birds-eye perspective (ground structure is transparent) of the present invention, and wherein top dielectric plate is using Rogers 5880 plates, layer dielectric plate using FR4 plate, by 3 D electromagnetic simulation software HFSS to power splitter structure into Row modeling, emulation and optimization, obtain the optimum of each section parameter, the numerical value of all parameters is as shown in table 1.
Symbol W_sub L_sub LL1 W50 Ltap L50 rs
Numerical value (mm) 47.9 105.84 42.29 3.12 17.42 13.4 0.5
Symbol WSIW d s Ls d2 Wtap L1
Numerical value (mm) 17.45 1.6 3 3 3 6.5 1
Symbol LL2 W W2 L2 W1 L4 L3
Numerical value (mm) 70 1 2 1.6 2 2 1.8
Fig. 3 is the final emulation S11 parameter of the high-isolation SIW power divider the present invention is based on lossy transmission line, S12 Parameter, S13 parameter and actual measurement S11 parameter, S12 parameter, S13 parameter in kind;As can be seen from Figure, attached in center operating frequency The actual measurement input port return loss of close power divider, insertion loss are all in a normal range.
Fig. 4 is the final emulation S22 parameter of the high-isolation SIW power divider the present invention is based on lossy transmission line, S33 Parameter, S23 parameter and actual measurement S11 parameter, S12 parameter, S23 parameter in kind, as can be seen from Figure, the output of power divider Reflection coefficient of port loss also has good effect, and the isolation of power divider has then been more than 25dB, with most of high-isolation function Device is divided to compare in no way inferior, naturally certainly than not taking the power divider of quarantine measures far better.
Fig. 5 is the final measured phase difference of the high-isolation SIW power divider the present invention is based on lossy transmission line, by scheming As can be seen that this kind design does not influence the phase difference of power divider input port.
According to measurement data as can be seen that isolation of the power divider near centre frequency microstrip transmission line work Good effect is reached under, while the matching degree of each port is good, insertion loss also in the normal range, reaches Purpose of design.
It should be understood that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention Principle, but not to limit the present invention.Therefore, that is done without departing from the spirit and scope of the present invention is any Modification, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention Covering the whole variations fallen into attached claim scope and boundary or this range and the equivalent form on boundary and is repairing Change example.

Claims (6)

1.一种高隔离度的基片集成波导功率分配器,其特征在于,包括位于上层介质基板的基片集成波导功率分配器本体,所述基片集成波导功率分配器本体包括输入端和输出端,下层介质基板设有有耗传输线,所述上层介质基板与下层介质基板间设有地平面,所述输出端两侧通过铜针与有耗传输线相连,铜针穿过地平面并与地平面不接触。1. A substrate-integrated waveguide power splitter with high isolation, characterized in that it comprises a substrate-integrated waveguide power splitter body positioned on an upper dielectric substrate, the substrate-integrated waveguide power splitter body comprising an input end and an output The lower dielectric substrate is provided with a lossy transmission line, the upper dielectric substrate and the lower dielectric substrate are provided with a ground plane, the two sides of the output end are connected to the lossy transmission line through copper pins, and the copper pins pass through the ground plane and are connected to the ground. The planes do not touch. 2.根据权利要求1所述的高隔离度的基片集成波导功率分配器,其特征在于,所述输入端采用微带线馈入。2 . The substrate-integrated waveguide power splitter with high isolation according to claim 1 , wherein the input end is fed by a microstrip line. 3 . 3.根据权利要求1所述的高隔离度的基片集成波导功率分配器,其特征在于,所述输入端与输出端采用锥形匹配。3 . The substrate-integrated waveguide power splitter with high isolation according to claim 1 , wherein the input end and the output end adopt tapered matching. 4 . 4.根据权利要求1所述的高隔离度的基片集成波导功率分配器,其特征在于,所述输出端通过并联枝节进行调谐。4 . The substrate-integrated waveguide power divider with high isolation according to claim 1 , wherein the output end is tuned through parallel branches. 5 . 5.根据权利要求1所述的高隔离度的基片集成波导功率分配器,其特征在于,所述功率分配器的工作中心频率在9.6GHz。5 . The substrate-integrated waveguide power divider with high isolation according to claim 1 , wherein the working center frequency of the power divider is 9.6 GHz. 6 . 6.一种高隔离度的基片集成波导功率分配器的设计方法,其特征在于,包括以下步骤:6. A method for designing a substrate-integrated waveguide power divider with high isolation, comprising the following steps: S01:选定上下两层介质基板,其中下层介质基板的损耗角正切比上层大,根据下层介质基板的参数通过MATLAB根据相关公式初步确定有耗传输线的宽度与线长;S01: Select the upper and lower dielectric substrates, in which the loss tangent of the lower dielectric substrate is larger than that of the upper layer. According to the parameters of the lower dielectric substrate, the width and line length of the lossy transmission line are preliminarily determined according to the relevant formulas through MATLAB; S02:设计基片集成波导功率分配器本体;S02: Design the substrate-integrated waveguide power divider body; S03:根据匹配原则设计功分器输入端与输出端的匹配结构;S03: Design the matching structure between the input end and the output end of the power divider according to the matching principle; S04:通过三维电磁仿真软件HFSS对功率分配器结构进行建模、仿真和优化,得到优化参数。S04: Model, simulate and optimize the structure of the power divider through the three-dimensional electromagnetic simulation software HFSS, and obtain the optimized parameters.
CN201811114314.9A 2018-09-25 2018-09-25 High Isolation Substrate Integrated Waveguide Power Divider Pending CN109301423A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113258241A (en) * 2021-05-07 2021-08-13 浙江吉利控股集团有限公司 Power divider based on substrate integrated waveguide

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489859B1 (en) * 1999-04-16 2002-12-03 Mitsubishi Denki Kabushiki Kaisha Power divider/combiner
US7561006B2 (en) * 2006-08-25 2009-07-14 Banpil Photonics, Inc. Low loss electrical delay line
CN203326077U (en) * 2013-06-27 2013-12-04 中国人民解放军理工大学 Coplanar waveguide feed substrate integration waveguide broadband power divider
JP2015056659A (en) * 2013-09-12 2015-03-23 富士通セミコンダクター株式会社 Component and circuit for output termination
CN105609917A (en) * 2015-11-12 2016-05-25 电子科技大学 Waveguide radial multipath power synthesizer based on lossy network
CN106654495A (en) * 2016-12-19 2017-05-10 中国电子科技集团公司第二十研究所 Filtering power divider of X wave band substrate-based integrated waveguide coaxial cavity

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489859B1 (en) * 1999-04-16 2002-12-03 Mitsubishi Denki Kabushiki Kaisha Power divider/combiner
US7561006B2 (en) * 2006-08-25 2009-07-14 Banpil Photonics, Inc. Low loss electrical delay line
CN203326077U (en) * 2013-06-27 2013-12-04 中国人民解放军理工大学 Coplanar waveguide feed substrate integration waveguide broadband power divider
JP2015056659A (en) * 2013-09-12 2015-03-23 富士通セミコンダクター株式会社 Component and circuit for output termination
CN105609917A (en) * 2015-11-12 2016-05-25 电子科技大学 Waveguide radial multipath power synthesizer based on lossy network
CN106654495A (en) * 2016-12-19 2017-05-10 中国电子科技集团公司第二十研究所 Filtering power divider of X wave band substrate-based integrated waveguide coaxial cavity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113258241A (en) * 2021-05-07 2021-08-13 浙江吉利控股集团有限公司 Power divider based on substrate integrated waveguide

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