CN109301045A - A light-emitting device, preparation method thereof, and display device - Google Patents
A light-emitting device, preparation method thereof, and display device Download PDFInfo
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- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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Abstract
本发明实施例提供一种发光器件及其制备方法、显示装置，涉及显示技术领域，可解决背光组件因弯曲易于老化损伤的问题。该发光器件包括：相对设置的第一衬底基板和第二衬底基板；其中，所述第一衬底基板和所述第二衬底基板为柔性衬底基板；第一电极和第二电极，所述第一电极和所述第二电极用于形成电场；设置在所述第一衬底基板和所述第二衬底基板之间的多个PN结，所述PN结用于在所述电场的作用下发出光子；设置在所述第一衬底基板上的光致发光层，用于在所述PN结发出光子的激发下发光。用于为曲面液晶显示面板提供面光源。
Embodiments of the present invention provide a light-emitting device, a method for manufacturing the same, and a display device, which relate to the field of display technology and can solve the problem that the backlight assembly is prone to aging and damage due to bending. The light-emitting device includes: a first base substrate and a second base substrate arranged oppositely; wherein, the first base substrate and the second base substrate are flexible base substrates; a first electrode and a second electrode , the first electrode and the second electrode are used to form an electric field; a plurality of PN junctions are arranged between the first base substrate and the second base substrate, and the PN junctions are used for Under the action of the electric field, photons are emitted; the photoluminescence layer disposed on the first substrate is used to emit light under the excitation of photons emitted by the PN junction. It is used to provide a surface light source for a curved LCD panel.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of luminescent device and preparation method thereof, display device.
Background technique
In recent years, with the fast development of display technology, various types of display devices are had gradually developed.For example, liquid
Crystal device (Liquid Crystal Display, abbreviation LCD) and organic electroluminescence display device and method of manufacturing same (Organic
Light-Emitting Display, abbreviation OLED).
Currently, although OLED display is ultra-thin with its, self-luminous, angle of visibility are big and low in energy consumption etc. becomes display device
In outstanding person, but the high research and development and production cost of OLED display but limit the extensive life of OLED display
It produces.In comparison, characteristic is good, high degree of automation, the liquid crystal that the cost of raw material is cheap, development potentiality is outstanding for large-scale production
Display device is but by a lot of concern.
Since flexible curved surface display technology angle of visibility is big, energy band gives people visual special experience, thus by consumer
Favor, major display scientific & technical corporation all puts into huge fund and carries out developing Journal of Sex Research.However, making for curved surface liquid crystal display device
For the backlight assembly of one of great component in liquid crystal display device, due to needing to consolidate flat panel backlight component using bending frame
Surely certain angle is bent to match curved surface liquid crystal display panel, and such flat panel backlight component is for a long time by applied stress and weather ring
Border variation, the structure of backlight assembly is easy to happen Aging Damage, thus significantly limits the development of curved surface liquid crystal display device.
Summary of the invention
The embodiment of the present invention provides a kind of luminescent device and preparation method thereof, display device, can solve backlight assembly because
The problem of bending is easy to Aging Damage.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
In a first aspect, a kind of luminescent device is provided, the first underlay substrate and the second underlay substrate being oppositely arranged；Wherein,
First underlay substrate and second underlay substrate are flexible substrate substrate；First electrode and second electrode, described first
Electrode and the second electrode are used to form electric field；It is arranged between first underlay substrate and second underlay substrate
Multiple PN junctions, the PN junction is for issuing photon under the action of the electric field；Light on first underlay substrate is set
Electroluminescent layer, for shining under the excitation that the PN junction issues photon.
Preferably, the PN junction includes semiconductor rods and the dopant that is entrained in the semiconductor rods.
Preferably, the size of the semiconductor rods is nanoscale.
Preferably, the material of the semiconductor rods is metal-oxide semiconductor (MOS).
Preferably, the luminescent device further include: be arranged between first underlay substrate and second underlay substrate
Insulation buffer solvent, the PN junction is immersed in the buffer solvent.
Preferably, the material of the photoluminescent layers is fluorescent powder.
Preferably, the luminescent device further include: the light guide plate on first underlay substrate is set.
Second aspect provides a kind of display device, including liquid crystal display panel and above-mentioned luminescent device；The photophore
Part is used to provide area source for the liquid crystal display panel.
The third aspect, provides a kind of display device, the display device include the first luminescent device, the second luminescent device and
Third luminescent device；First luminescent device, second luminescent device and the third luminescent device are above-mentioned hair
Optical device；Wherein, first luminescent device, second luminescent device and the third luminescent device for issuing respectively
Primaries；Alternatively, the display device includes multiple above-mentioned luminescent devices and the luminescent device light emission side is arranged in
Colored filter；Wherein, the luminescent device is for issuing white light.
Fourth aspect provides a kind of preparation method of luminescent device, comprising: provides the second underlay substrate；Described second
Multiple PN junctions are formed on underlay substrate, to form the second substrate；The PN junction is for issuing photon under the action of electric field；Institute
It states and forms first substrate on PN junction, the first substrate includes the first underlay substrate and photoluminescent layers；Wherein, first lining
Substrate and second underlay substrate are flexible substrate substrate；The first substrate and/or the second substrate include first
Electrode and second electrode；The first electrode and the second electrode are used to form electric field.
Preferably, multiple PN junctions are formed on second underlay substrate, comprising: formed on second underlay substrate
Multiple semiconductor rods；The semiconductor rods are doped, PN junction is formed.
It is further preferred that forming on the PN junction after forming multiple PN junctions on second underlay substrate
Before one substrate, the preparation method of the luminescent device further include: the buffer solvent of insulation is formed on the multiple PN junction.
The embodiment of the present invention provides a kind of luminescent device and preparation method thereof, display device, and luminescent device includes the first electricity
Pole and second electrode, PN junction and photoluminescent layers, since PN junction is under the action of first electrode and second electrode form electric field
Photon can be issued, and photoluminescent layers can shine under the excitation that PN junction issues photon, thus luminescent device may be implemented
It shines.
In addition, existing liquid crystal display device, backlight assembly is not flexible, and concrete reason has very much, exemplary, for straight
Down backlight component, since the backlight in backlight assembly is made of the multiple LED light being arranged on backboard, in order to which LED is arranged
Lamp and cabling for controlling LED light, thus backboard must select the higher material of hardness, result in backlight assembly to be not easy in this way
Bending, flexibility are poor.When backlight assembly is applied in curved surface liquid crystal display device, backlight assembly can be generated because of Long-term bend
The problem of being easy to Aging Damage.And in the embodiment of the present invention, due to the first underlay substrate in luminescent device and the second underlay substrate
For flexible substrate substrate, and the PN junction for issuing photon be the multiple of dispersion, therefore luminescent device can disperse when being bent
Stress, so that luminescent device has good flexibility.So, it is answered in luminescent device provided in an embodiment of the present invention
For in curved surface liquid crystal display device, when providing area source as backlight assembly for curved surface liquid crystal display panel, due to photophore
Part has good flexibility, because without and then improving the service life of curved surface liquid crystal display device because of bending Aging Damage.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram one of luminescent device provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram two of luminescent device provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram three of luminescent device provided in an embodiment of the present invention；
Fig. 4 a is a kind of structural schematic diagram four of luminescent device provided in an embodiment of the present invention；
Fig. 4 b is a kind of structural schematic diagram five of luminescent device provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram of display device provided in an embodiment of the present invention；
Fig. 6 is a kind of flow diagram of the preparation method of luminescent device provided in an embodiment of the present invention；
Fig. 7 is a kind of structural schematic diagram that multiple PN junctions are formed on the second underlay substrate provided in an embodiment of the present invention；
Fig. 8 is a kind of structural representation that multiple semiconductor rods are formed on the second underlay substrate provided in an embodiment of the present invention
Figure；
Fig. 9 is the structural schematic diagram that a kind of pair of semiconductor rods provided in an embodiment of the present invention are doped；
Figure 10 is a kind of knot that the first underlay substrate and photoluminescent layers are formed on PN junction provided in an embodiment of the present invention
Structure schematic diagram；
Figure 11 is that one kind provided in an embodiment of the present invention forms the first underlay substrate, photoluminescent layers and leaded light on PN junction
The structural schematic diagram of plate.
Appended drawing reference:
01- liquid crystal display panel；02- luminescent device；The first underlay substrate of 10-；The second underlay substrate of 20-；The first electricity of 30-
Pole；40- second electrode；50-PN knot；501-P type semiconductor layer；502-N type semiconductor layer；503- semiconductor rods；504- doping
Agent；60- photoluminescent layers；70- buffer solvent；80- light guide plate.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of luminescent device, as depicted in figs. 1 and 2, comprising: the first substrate base being oppositely arranged
Plate 10 and the second underlay substrate 20, the first underlay substrate 10 and the second underlay substrate 20 are flexible substrate substrate；First electrode 30
With second electrode 40, first electrode 30 and second electrode 40 are used to form electric field；Setting is in the first underlay substrate 10 and the second lining
Multiple PN junctions 50 between substrate 20, PN junction 50 is for issuing photon under the action of electric field；It is arranged in the first underlay substrate
Photoluminescent layers 60 on 10, for shining under the excitation that PN junction 50 issues photon.
It should be noted that first, for the first underlay substrate 10 and the second underlay substrate 20 material without limiting,
It is subject to flexible, flexible.It such as can be organic material.
In addition, the material of the material of the first underlay substrate 10 and the second underlay substrate 20 can be identical, it can not also be identical.
Second, for first electrode 30 and second electrode 40 setting position without limit, electric field can be formed by being subject to.
Exemplary, first electrode 30 and second electrode 40 can be arranged on the first underlay substrate 10；Second can also be arranged at
On underlay substrate 20；Certainly (Figure of description 1 on the first underlay substrate 10 and the second underlay substrate 20 can also be separately positioned on
With Fig. 2 by taking first electrode 30 and second electrode 40 are separately positioned on the first underlay substrate 10 and the second underlay substrate 20 as an example into
Row signal).When first electrode 30 and second electrode 40 are arranged on same underlay substrate, first electrode 30 and second electrode 40
It can be arranged with same layer, first electrode 30 and second electrode 40 are strip at this time；First electrode 30 and second electrode 40 can also be with
It is arranged in different layers, first electrode 30 and second electrode 40 can be strip at this time, be also possible to one for strip, one is
Planar.
Third, for PN junction 50 structure without limit.Herein, PN junction 50 can be PN homojunction, be also possible to different
Matter PN junction.
The specific structure of two kinds of PN junctions 50 presented below.
The first: is as shown in Figure 1, PN junction 50 includes the p type semiconductor layer 501 and n type semiconductor layer 502 being stacked.
Wherein, the transitional region near the interface of p type semiconductor layer 501 and n type semiconductor layer 502 is known as PN junction.
It herein, can be with P for the position of p type semiconductor layer 501 and n type semiconductor layer 502 in PN junction 50 without limiting
Type semiconductor layer 501 is close to the second underlay substrate 20；It is also possible to n type semiconductor layer 502 close to the second underlay substrate 20.
Second: as shown in Fig. 2, PN junction 50 includes semiconductor rods 503 and the dopant being entrained in semiconductor rods 503
504。
Wherein, multiple semiconductor rods 503 can be in array distribution, can also be with Arbitrary distribution.Semiconductor rods 503 are along being parallel to
The shape in the section of the first underlay substrate 10 can be circle, be also possible to rectangular, can also be any regular certainly or does not advise
Shape then.
Herein, can be by organic semiconductor, be also possible to inorganic half without limiting for the material of semiconductor rods 503
Conductor, such as metal-oxide semiconductor (MOS).Since metal-oxide semiconductor (MOS) has, source is wide, nonpollution environment is friendly, physics
The advantages that stable chemical performance and strong anti-photoluminescence corrosive power, therefore the material of preferred semiconductor of embodiment of the present invention stick 503
For metal-oxide semiconductor (MOS).Specifically, metal-oxide semiconductor (MOS) can be ZnO (zinc oxide), CdO (cadmium oxide) etc..
On this basis, for the dopant 504 that is entrained in semiconductor rods 503 without limiting, PN junction can be formed
Subject to 50.It is exemplary, if the material of semiconductor rods 503 is N-type semiconductor, shape can be adulterated by carrying out p-type electron injection
At PN junction；If the material of semiconductor rods 503 is P-type semiconductor, can adulterate to form PN junction by carrying out N-type electron injection.
It is PN homojunction that each semiconductor rods 503, which are adulterated the PN junction to be formed by electron injection,.
In addition, alloyage, diffusion method, ion implantation and outer can be selected to the method that semiconductor rods 503 are doped
Epitaxial growth etc..
The structure of PN junction 50 includes but is not limited to above two structure, and any structure including PN junction is all in guarantor of the invention
It protects in range.
In addition, PN junction 50 can not be contacted with first electrode 30 and second electrode 40；PN junction 50 can also be with the first electricity
Pole 30 and/or second electrode 40 contact.In order to make PN junction 50 that can more effectively issue photon, thus this hair under the action of electric field
Bright embodiment is preferred, and PN junction 50 is contacted with first electrode 30 and/or second electrode 40.
4th, luminescent device when in use, by control first electrode 30 and second electrode 40 formed direction of an electric field or
The direction of an electric field of the electric field component for the electric field that person is at least formed is directed toward N-type region, so, PN junction 50 by the p type island region of PN junction 50
Under the action of electric field, how sub and few son crosses compound tense after potential barrier is met and will form photon.
5th, for photoluminescent layers 60 material without limit, with can PN junction 50 issue photon excitation issue
Subject to light.
Herein, the material of photoluminescent layers 60 can be On Orgnic Luminous Materials, be also possible to inorganic photoluminescent material
Material, such as fluorescent powder.The embodiment of the present invention is preferred, and the material of photoluminescent layers 60 is fluorescent powder.
Wherein, the material of the PN junction 50 of selection and the material of photoluminescent layers 60 should be mutually matched, to ensure PN junction 50
The photon issued under electric field action can excite photoluminescent layers 60 to shine.Since the wavelength of photon is shorter, energy is bigger, because
This preferred PN junction 50 issues short wavelength photons under electric field action.
On this basis, the color that luminescent device issues light depends on the color that photoluminescent layers 60 issue light, photic hair
The color that photosphere 60 issues light is related with the material of photoluminescent layers 60.Photoluminescent layers 60 can issue white light, feux rouges, green light
Deng.
The embodiment of the present invention provides a kind of luminescent device, and luminescent device includes first electrode 30 and second electrode 40, PN junction
50 and photoluminescent layers 60, since PN junction 50 can issue under the action of first electrode 30 and second electrode 40 form electric field
Photon, and photoluminescent layers 60 can shine under the excitation that PN junction 50 issues photon, thus luminescent device may be implemented to shine.
In addition, existing liquid crystal display device, backlight assembly is not flexible, and concrete reason has very much, exemplary, for straight
Down backlight component, since the backlight in backlight assembly is by multiple LED (Light-Emitting for being arranged on backboard
Diode, light emitting diode) lamp composition, in order to LED light be arranged and the cabling for controlling LED light, thus backboard must be selected firmly
Higher material is spent, results in backlight assembly not flexible in this way, flexibility is poor.It is applied to curved surface liquid crystal in backlight assembly
When in showing device, backlight assembly can be led to the problem of because Long-term bend is easy to Aging Damage.And in the embodiment of the present invention, due to hair
The first underlay substrate 10 and the second underlay substrate 20 are flexible substrate substrate in optical device, and the PN junction 50 for issuing photon is
That disperses is multiple, therefore luminescent device can be with dispersive stress, so that luminescent device has good flexibility in bending.
So, it is applied in curved surface liquid crystal display device in luminescent device provided in an embodiment of the present invention, is as backlight assembly
When curved surface liquid crystal display panel provides area source, since luminescent device has good flexibility, because without because being bent aging
Damage, and then improve the service life of curved surface liquid crystal display device.
As shown in Fig. 2, when PN junction 50 includes semiconductor rods 503 and the dopant 504 being entrained in semiconductor rods 503,
The size of the preferred semiconductor rods 503 of the embodiment of the present invention is nanoscale.
The embodiment of the present invention since the size of semiconductor rods 503 is nanoscale, thus utilizes nanometer size effect, shines
Device has excellent mechanics, machinery and physical and chemical performance, further improves the flexibility and bending property of luminescent device.
Preferably, as shown in figure 3, luminescent device further include: setting the first underlay substrate 10 and the second underlay substrate 20 it
Between insulation buffer solvent 70, PN junction 50 is immersed in buffer solvent 70.
Herein, can be by organic buffer solvent, be also possible to inorganic slow without limiting for the material of buffer solvent 70
Rush solvent.Since inorganic buffer solvent is easy to produce induction electrostatic under the action of electric field, and the electron beam of organic buffer solvent
Binding force is strong, thus the embodiment of the present invention is preferred, and the material of buffer solvent 70 is organic buffer solvent.
The embodiment of the present invention since luminescent device includes buffer solvent 70, thus can be alleviated outer by buffer solvent 70
Boundary's stress, so that the flexibility of luminescent device is further improved, so that luminescent device is more easily bent.
Preferably, as shown in figures 4 a and 4b, luminescent device further includes the light guide plate being arranged on the first underlay substrate 10
80。
Wherein, one of photoluminescent layers 60 far from the first underlay substrate 10 can be arranged in light guide plate 80 as shown in fig. 4 a
Side, the photon that PN junction 50 issues at this time shines photoluminescent layers 60 after the homogenization of light guide plate 80, so that luminescence generated by light
Layer 60 uniformly issues light；Can also as shown in Figure 4 b the setting of light guide plate 80 photoluminescent layers 60 and the first underlay substrate 10 it
Between, the photon that PN junction 50 issues at this time shines photoluminescent layers 60 and photoluminescent layers 60 is excited to shine, and photoluminescent layers 60 issue
Light pass through light guide plate uniform after 80s.
The embodiment of the present invention, since luminescent device includes the light guide plate 80 being arranged on the first underlay substrate 10, thus can
It is uniform with the light for ensuring that luminescent device issues.It, can be in luminescent device for when providing area source for liquid crystal display panel
Ensure that area source is uniform.
The embodiment of the present invention provides a kind of display device, as shown in figure 5, including liquid crystal display panel 01 and above-mentioned shining
Device 02, luminescent device 02 are used to provide area source for liquid crystal display panel 01.
Herein, liquid crystal display panel 01 is including array substrate, to box substrate and setting in array substrate and to box substrate
Between liquid crystal layer.Colored filter can be set on to box substrate, also can be set in array substrate.Colored filter
It is arranged in array substrate, array substrate is referred to as COA substrate (Color Filter on Array) at this time.
The embodiment of the present invention provides a kind of display device, and display device includes above-mentioned luminescent device 02, display device packet
The luminescent device 02 included has structure identical with luminescent device 02 provided by the above embodiment and beneficial effect, due to above-mentioned reality
Example is applied the structure and beneficial effect of luminescent device 02 is described in detail, thus details are not described herein again.
The embodiment of the present invention also provides another display device, and display device includes the first luminescent device, the second photophore
Part and third luminescent device；First luminescent device, the second luminescent device and third luminescent device are above-mentioned luminescent device 02；
Wherein, the first luminescent device, the second luminescent device and third luminescent device for issuing primaries respectively；Alternatively, display
Device includes multiple above-mentioned luminescent devices 02 and the colored filter that 02 light emission side of luminescent device is arranged in；Wherein, photophore
Part 02 is for issuing white light.
It should be noted that a luminescent device 02 in display device is equivalent to a sub-pix.Control can be passed through
The size for the electric field that first electrode 30 and second electrode 40 generate in luminescent device 02 issues the bright of light to control luminescent device 02
Degree, so as to adjust the grayscale of each sub-pix.
Herein, it can be spaced apart by pixel defining layer between the adjacent luminescent device 02 in display device.
Wherein, the first luminescent device, the second luminescent device and third luminescent device for issuing primaries respectively, and three
Primitive color light can be feux rouges, green light and blue light；It may be yellow light, magenta light and green light.
The embodiment of the present invention provides a kind of display device, since the luminescent device 02 in display device is luminescent device
When, thus the display device formed is flexible display apparatus.
The embodiment of the present invention provides a kind of preparation method of luminescent device, as shown in Figure 6, comprising:
S100, the second underlay substrate 20 is provided.
Wherein, since the second underlay substrate 20 is flexible substrate substrate, flexible can be first formed on the rigid substrate
Two underlay substrates 20, then each film layer is formed on the second underlay substrate 20, after the completion of prepared by luminescent device 02, by the second lining
Substrate 20 is removed from rigid substrates.
S101, multiple PN junctions 50 are formed on the second underlay substrate 20, to form the second substrate；PN junction 50 is used in electric field
Under the action of issue photon.
Herein, for how on the second underlay substrate 20 to form PN junction 50 without limiting, two kinds presented below specific
Implementation.
The first: is as shown in fig. 7, forming the P-type semiconductor layer film of stacking on the second underlay substrate 20 and N-type is partly led
Body thin film is patterned the P-type semiconductor to form stacking as shown in Figure 7 to P-type semiconductor layer film and N-type semiconductor film
Layer 501 and n type semiconductor layer 502.
It herein, can be with P for the position of p type semiconductor layer 501 and n type semiconductor layer 502 in PN junction 50 without limiting
Type semiconductor layer 501 is close to the second underlay substrate 20；It is also possible to n type semiconductor layer 502 close to the second underlay substrate 20.
Second: S200, as shown in figure 8, forming multiple semiconductor rods 503 on the second underlay substrate 20.
Wherein, for how to form on the second underlay substrate 20 multiple semiconductor rods 503 without limiting.For example, can
To grow multiple semiconductor rods 503 on the second underlay substrate 20 using electrochemical deposition method.In another example in the second underlay substrate
Semiconductive thin film is formed on 20, semiconductive thin film is patterned, and forms multiple semiconductor rods 503.
On this basis, for the size of semiconductor rods 503 without limiting, in order to have the luminescent device to be formed 02
Good flexibility, thus the size of the preferred semiconductor rods 503 of the embodiment of the present invention is nanoscale.When semiconductor rods 503
When having a size of nanoscale, the embodiment of the present invention is grown on the second underlay substrate 20 preferably by electrochemical deposition method multiple partly to be led
Body stick 503.
Herein, the multiple semiconductor rods 503 formed on the second underlay substrate 20 can also can arbitrarily be arranged with array arrangement
Cloth.Shape of the semiconductor rods 503 along the section for being parallel to the first underlay substrate 10 can be circle, be also possible to it is rectangular, certainly
It can also be any regular or irregular shape.
In addition, for semiconductor rods 503 material without limiting, can be organic semiconductor, be also possible to inorganic half
Conductor, such as metal-oxide semiconductor (MOS).The material of preferred semiconductor of embodiment of the present invention stick 503 is that metal oxide is partly led
Body.Specifically, metal-oxide semiconductor (MOS) can be ZnO or CdO etc..
S201, as shown in figure 9, be doped to semiconductor rods 503, form PN junction 50.
Herein, exemplary for being doped semiconductor rods 503 without limiting using which kind of mode, it can use
Diffusion method or ion implantation etc. are doped semiconductor rods 503.The embodiment of the present invention is preferred, utilizes PECVD (Plasma
Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) technology, use acceptor's gas
(i.e. reaction gas) carries out electron injection doping.
Wherein, for the dopant 504 that is entrained in semiconductor rods 503 without limiting, PN junction 50 can be formed by being subject to.
It is exemplary, if the material of semiconductor rods 503 is N-type semiconductor, carry out p-type electron injection doping；If the material of semiconductor rods 503
Material is P-type semiconductor, then carries out N-type electron injection doping.Electron injection doping is carried out to semiconductor rods 503, forming PN junction is
PN homojunction.
S102, as shown in Figure 10, forms first substrate, first substrate includes the first underlay substrate 10 and light on PN junction 50
Electroluminescent layer 60；Wherein, the first underlay substrate 10 and the second underlay substrate 20 are flexible substrate substrate, first substrate and/or the
Two substrates include first electrode 30 and second electrode 40；First electrode 30 and second electrode 40 are used to form electric field (in attached drawing 10
First electrode 30 and second electrode 40 are not illustrated).
Wherein, for first electrode 30 and second electrode 40 setting position without limit, electric field can be formed by being subject to.
Exemplary, first electrode 30 and second electrode 40 can be both formed on the first underlay substrate 10；Second can also be both formed in
On underlay substrate 20；Certainly it can also be respectively formed on the first underlay substrate 10 and the second underlay substrate 20.If first electrode
30 and/or second electrode 40 be formed on the second underlay substrate 20, first can form first electrode on the second underlay substrate 20
30 and/or second electrode 40, re-form PN junction 50；If first electrode 30 and/or second electrode 40 are formed in the first underlay substrate
On 10, first electrode 30 and/or second electrode 40 can be first formed on the first underlay substrate 10, re-forms photoluminescent layers
60；Photoluminescent layers 60 can also be first formed on the first underlay substrate 10, re-form first electrode 30 and/or second electrode
40。
Herein, the material of the material of the first underlay substrate 10 and the second underlay substrate 20 can be identical, can not also be identical.
It should be noted that as shown in Figure 10, when first substrate includes the first underlay substrate 10 and photoluminescent layers 60,
First photoluminescent layers 60 can be formed on the first underlay substrate 10, then first substrate is formed on PN junction 50.
In addition, as shown in figure 11, first substrate can also wrap in addition to including the first underlay substrate 10 and photoluminescent layers 60
Include light guide plate 80.Light guide plate 80 can be formed in side of the photoluminescent layers 60 far from the first underlay substrate 10, at this time PN junction 50
The photon of sending shines photoluminescent layers 60 after the homogenization of light guide plate 80, so that photoluminescent layers 60 uniformly issue
Light；Light guide plate 80 can also be formed between photoluminescent layers 60 and the first underlay substrate 10, the photon that PN junction 50 issues at this time
Shining photoluminescent layers 60 makes photoluminescent layers 60 shine, and the light that photoluminescent layers 60 issue uniformly goes out by light guide plate is after 80s
It penetrates.Light guide plate 80 can make 02 uniformly light-emitting of luminescent device.
Based on above-mentioned, photoluminescent layers 60 can be formed directly on light guide plate 80, can also be formed directly into the first lining
On substrate 10.When photoluminescent layers 60 are formed on light guide plate 80, the first underlay substrate 10 can also be formed in light guide plate 80
On.In addition, photoluminescent layers 60 can be formed by coating processes.Specifically, for example, can be formed on light guide plate 80 photic
Luminescent layer 60, then the first underlay substrate 10 is formed on photoluminescent layers 60.The first substrate base is formed on photoluminescent layers 60
Plate 10, which can be, is covered on the first underlay substrate 10 on photoluminescent layers 60, can also be formed on photoluminescent layers 60 as heavy
The first underlay substrate 10 of product.In another example forming photoluminescent layers 60 on the first underlay substrate 10, luminescence generated by light will be formed with
First underlay substrate 10 of layer 60 is formed on light guide plate 80.
The embodiment of the present invention provides a kind of preparation method of luminescent device, the preparation method of luminescent device 02 have with it is above-mentioned
The identical structure of luminescent device 02 and beneficial effect that embodiment provides, since above-described embodiment is to the knot of luminescent device 02
Structure and beneficial effect are described in detail, thus details are not described herein again.
Preferably, after step slol, before step S102, the preparation method of luminescent device further include: multiple
The buffer solvent 70 of insulation is formed on PN junction 50.
Herein, buffer solvent 70 can be sprayed or coated on multiple PN junctions 50.
Wherein, can be by organic buffer solvent, be also possible to inorganic slow without limiting for the material of buffer solvent 70
Rush solvent.Since inorganic buffer solvent is easy to produce induction electrostatic under the action of electric field, and the electron beam of organic buffer solvent
Binding force is strong, thus the embodiment of the present invention is preferred, and the material of buffer solvent 70 is organic buffer solvent.
The embodiment of the present invention forms the buffer solvent 70 of insulation, due to that can pass through buffer solvent on multiple PN junctions 50
70 alleviate extraneous stress, thus improve the flexibility of luminescent device 02.It is used to be curved surface LCD display when luminescent device 02
When plate provides light source, luminescent device 02 can be prevented by applied stress and Climate and Environment Variation Aging Damage.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (12)
1. a kind of luminescent device characterized by comprising
The first underlay substrate and the second underlay substrate being oppositely arranged；Wherein, first underlay substrate and second substrate
Substrate is flexible substrate substrate；
First electrode and second electrode, the first electrode and the second electrode are used to form electric field；
Multiple PN junctions between first underlay substrate and second underlay substrate are set, and the PN junction is used for described
Photon is issued under the action of electric field；
Photoluminescent layers on first underlay substrate are set, for shining under the excitation that the PN junction issues photon.
2. luminescent device according to claim 1, which is characterized in that the PN junction includes semiconductor rods and is entrained in described
Dopant in semiconductor rods.
3. luminescent device according to claim 2, which is characterized in that the size of the semiconductor rods is nanoscale.
4. luminescent device according to claim 2 or 3, which is characterized in that the material of the semiconductor rods is metal oxidation
Object semiconductor.
5. luminescent device according to claim 1, which is characterized in that the luminescent device further include: setting described first
The buffer solvent of insulation between underlay substrate and second underlay substrate, the PN junction are immersed in the buffer solvent.
6. luminescent device according to claim 1, which is characterized in that the material of the photoluminescent layers is fluorescent powder.
7. luminescent device according to claim 1, which is characterized in that the luminescent device further include: setting is described the
Light guide plate on one underlay substrate.
8. a kind of display device, which is characterized in that shine including liquid crystal display panel and as claim 1-7 is described in any item
Device；The luminescent device is used to provide area source for the liquid crystal display panel.
9. a kind of display device, which is characterized in that the display device includes the first luminescent device, the second luminescent device and third
Luminescent device；First luminescent device, second luminescent device and the third luminescent device are appointed for claim 1-7
Luminescent device described in one；Wherein, first luminescent device, second luminescent device and the third luminescent device
For issuing primaries respectively；
Alternatively, the display device includes multiple such as described in any item luminescent devices of claim 1-7 and is arranged in the hair
The colored filter of optical device light emission side；Wherein, the luminescent device is for issuing white light.
10. a kind of preparation method of luminescent device characterized by comprising
Second underlay substrate is provided；
Multiple PN junctions are formed on second underlay substrate, to form the second substrate；The PN junction is used for the effect in electric field
Lower sending photon；
First substrate is formed on the PN junction, the first substrate includes the first underlay substrate and photoluminescent layers；
Wherein, first underlay substrate and second underlay substrate are flexible substrate substrate；The first substrate and/or institute
Stating the second substrate includes first electrode and second electrode；The first electrode and the second electrode are used to form electric field.
11. the preparation method of luminescent device according to claim 10, which is characterized in that on second underlay substrate
Form multiple PN junctions, comprising:
Multiple semiconductor rods are formed on second underlay substrate；
The semiconductor rods are doped, PN junction is formed.
12. the preparation method of luminescent device according to claim 10, which is characterized in that on second underlay substrate
It is formed after multiple PN junctions, is formed before first substrate on the PN junction, the preparation method of the luminescent device further include:
The buffer solvent of insulation is formed on the multiple PN junction.
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Cited By (1)
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|---|---|---|---|---|
| CN112054130A (en) * | 2020-09-19 | 2020-12-08 | 福州大学 | Stretchable light-emitting device based on alternating current electric field driving semiconductor PN junction and method thereof |
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| CN109301045B (en) | 2020-07-31 |
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