CN109300932A - LED display and method of making the same - Google Patents
LED display and method of making the same Download PDFInfo
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- CN109300932A CN109300932A CN201811340457.1A CN201811340457A CN109300932A CN 109300932 A CN109300932 A CN 109300932A CN 201811340457 A CN201811340457 A CN 201811340457A CN 109300932 A CN109300932 A CN 109300932A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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Abstract
本发明涉及显示器技术领域，提供了一种LED显示器及其制作方法，所述LED显示器包括在基底上依次叠加设置的金属层和驱动层，所述金属层中形成有多个微孔，每个微孔中均嵌有LED芯片，所述驱动层包括与所述多个微孔一一对应的驱动单元，每个驱动单元均与对应微孔内的LED芯片电连接。所述LED显示器有利于降低LED芯片与对应的驱动单元之间实现电气互连的难度，提高显示分辨率，并且，一体化的金属层可将LED芯片在工作时散发的热量导出，金属层可有效隔离位于相邻微孔中的LED芯片发出的光线，均有利于提升LED显示器的性能。所述LED显示器的制作方法与通用半导体工艺兼容。
The present invention relates to the technical field of displays, and provides an LED display and a manufacturing method thereof. The LED display comprises a metal layer and a driving layer which are sequentially superimposed on a substrate, wherein a plurality of micro-holes are formed in the metal layer, each LED chips are embedded in the micro-holes, the driving layer includes driving units corresponding to the plurality of micro-holes one-to-one, and each driving unit is electrically connected to the LED chips in the corresponding micro-holes. The LED display is beneficial to reduce the difficulty of realizing electrical interconnection between the LED chip and the corresponding driving unit, improve the display resolution, and the integrated metal layer can dissipate the heat emitted by the LED chip during operation, and the metal layer can Effectively isolating the light emitted by the LED chips located in the adjacent micro-holes is beneficial to improve the performance of the LED display. The manufacturing method of the LED display is compatible with general semiconductor processes.
Description
Technical field
The present invention relates to display technology fields more particularly to a kind of light-emitting diode display and preparation method thereof.
Background technique
LED (Light Emitting Diode, light emitting diode) display technology is by traditional LED light source microminiaturization
The display skill that each pixel addressing is controlled and is operated alone is realized with matrixing and using semiconductor drive circuit
Art.LED display technique can be used for large-sized computer, TV, advertisement display, it can also be used to miniscope, due to
LED is shown as self-luminous and shows, and in brightness, service life, contrast, reaction time, energy consumption, visible angle and resolution ratio
Comprehensive performance is preferable, thus has broad application prospects.
Light-emitting diode display generally includes the LED chip (as pixel) of array distribution and for controlling LED chip
Drive array and peripheral circuit, wherein LED chip be attached on the substrate for be formed with drive array again with corresponding driving
Element using the methods of wire bond carry out electric interconnection, current light-emitting diode display technology the following aspects there is still a need for
It improves: one, how to improve the electric interconnection mode between LED chip and corresponding driving element to improve resolution ratio；Two, by
It may cause the light efficiency decline of LED chip, the drift of central wavelength, or even failure in the raising of temperature, thus need to be provided with
The radiating mode of effect；Three, since the light that usual LED chip issues can be emitted by its each surface, in order to reduce adjacent picture
Interference between element needs to be effectively isolated between LED chip.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode display and preparation method thereof, the light-emitting diode display can be used for high score
Resolution shows wherein the LED chip as pixel is reduced interference by mutually isolated, and there is preferable heat dissipation effect.
In one aspect of the invention, a kind of light-emitting diode display is provided, comprising:
Substrate；The metal layer being set in the substrate is formed with multiple micropores in the metal layer, each described micro-
Kong Zhongjun is embedded with LED chip；And be set to the driving layer on the metal layer, the driving layer include with it is the multiple micro-
The one-to-one driving unit in hole, each driving unit are electrically connected with the LED chip in corresponding micropore.
Optionally, peripheral circuit is additionally provided in the substrate, the peripheral circuit is electrically connected with the multiple driving unit
It connects；The metal layer is connect with the public electrode wire in the peripheral circuit.
Optionally, the LED chip includes first electrode and second electrode, wherein the first electrode and corresponding institute
Driving unit electrical connection is stated, the second electrode is electrically connected with the metal layer.
Optionally, the LED chip is the coplanar chip of electrode, and the first electrode and the second electrode are respectively positioned on institute
The upper surface side far from the substrate of LED chip is stated, the corresponding micropore runs through the metal layer；Alternatively, described
LED chip is electrode antarafacial chip, and the first electrode is located at the upper surface side far from the substrate of the LED chip,
The second electrode is located at the side close to the upper surface of substrate of the LED chip, and the depth of the corresponding micropore is small
In the thickness of the metal layer.
Optionally, on the direction perpendicular to the substrate surface, the metal layer with a thickness of 10 μm~1000 μm.
Optionally, the material of the metal layer includes at least one of stainless steel, copper, nickel, chromium, zinc, aluminium metal, or
Person, the metal layer include the alloy of at least one of iron, copper, nickel, chromium, zinc, aluminium element.
Optionally, the light-emitting diode display further includes being set to gluing between the upper surface of the substrate and the metal layer
Layer is connect, to engage the substrate and the metal layer.
Optionally, the material of the adhesive layer includes polyimides, polyester, at least one in polymethyl methacrylate
Kind, or including at least one of iron, nickel, chromium, copper, tin, silver, zinc, copper, aluminium.
In another aspect of this invention, a kind of production method of light-emitting diode display is provided, comprising the following steps:
Substrate is provided, the upper surface of the substrate is preset with multiple pixel display areas and for limiting the multiple pixel
The non-display area of viewing area；Metal layer and driving layer are sequentially formed on the substrate, and the metal layer is covered in the substrate
Upper surface, the driving layer is covered in the upper surface of the metal layer, and the driving layer includes corresponding to the non-display area
The multiple driving units formed；It is sequentially etched the driving layer and the metal layer, it is aobvious corresponding to the multiple pixel to be formed
The opening through the driving floor for showing area and multiple micropores in the metal layer；One in the multiple micropore
One is accordingly embedded in multiple LED chips, and the LED chip includes first electrode and second electrode, and the first electrode is located at
The surface far from the substrate surface side of the LED chip；And sequentially form on the substrate planarization layer and
Interconnection layer, the planarization layer cover the upper surface of the driving layer and the multiple LED chip, and the interconnection layer is located at
On the planarization layer, it is single that the interconnection layer makes the first electrode of each LED chip be electrically connected to the corresponding driving
Member.
Optionally, the LED chip is the coplanar chip of electrode, and the second electrode is located at the separate institute of the LED chip
The surface of substrate surface side is stated, the second electrode is also electrically connected by the interconnection layer with the metal layer；Alternatively, described
LED chip is electrode antarafacial chip, and the second electrode is located at the side close to the upper surface of substrate of the LED chip,
The depth of the micropore is less than the thickness of the metal layer, is embedded in multiple LED chips correspondingly in the multiple micropore
When, the second electrode is contacted and is electrically connected with the metal layer.
Light-emitting diode display provided by the invention is sequentially overlapped in substrate and is provided with metal layer and driving layer, the metal
It is formed with multiple micropores in layer, is embedded with LED chip in each micropore, the driving layer includes and the multiple micropore
One-to-one driving unit, each driving unit are electrically connected with the LED chip in corresponding micropore.The LED is shown
Utensil has the advantage that firstly, by LED chip in the micropore in metal layer, is conducive to for LED chip to be limited to setting
Position, by by the electrode of LED chip be set to driving layer where plane in, can use general film forming, photoetching, erosion
The processing procedures such as carve and LED chip and driving unit be subjected to electric interconnection, advantageously reduce LED chip and corresponding driving element it
Between realize electric interconnection difficulty, while be conducive to improve display resolution；Secondly, LED chip is micro- in metal layer
In hole, integrated metal layer has good heating conduction, thus is conducive to the heat for generating LED chip at work
Export is conducive to the performance for promoting light-emitting diode display；Again, since LED chip is in the micropore in metal layer, metal layer
The light that the LED chip of adjacent pixel viewing area issues can be effectively isolated, be conducive to promote the aobvious of light-emitting diode display
Show effect.
Metal layer and driving layer is successively formed on the substrate in the production method of above-mentioned light-emitting diode display provided by the invention,
Then it performs etching, to form multiple micropores of setting LED chip in the metal layer, micropore corresponds to the picture of upper surface of substrate
Plain viewing area is formed, using LED chip as the pixel of light-emitting diode display, then in the multiple micropore correspondingly
Multiple LED chips are embedded in, and electric by the first of each LED chip using the metal interconnection process of semiconductor planar technique
Pole is electrically connected with corresponding driving unit in driving layer.The production method and general semiconductor process compatible, and have with
The same or like advantage of above-mentioned light-emitting diode display.
Detailed description of the invention
Fig. 1 is the flow diagram of the production method of the light-emitting diode display of one embodiment of the invention.
Fig. 2 a to Fig. 2 e is section of the production method of the light-emitting diode display of one embodiment of the invention in implementation process
Schematic diagram.
Fig. 3 a to Fig. 3 e is the production method of the light-emitting diode display of another embodiment of the present invention cuing open in implementation process
Face schematic diagram.
Description of symbols:
1,2-LED chip；
100,200- substrate；101,201- adhesive layer；110,210- metal layer；120,220- drives layer；121,221- is slow
Rush layer；122,222- active layer；124,224- gate electrode；126a, 226a- source electrode；126b, 226b- drain electrode；123,
223- gate insulating layer；125,225- interlayer insulating film；127,227- protective layer；10,20- driving unit；120a, 220a- are opened
Mouthful；110a, 210a- micropore；130,230- planarization layer；140,240- interconnection layer；The first contact plunger of 11-；12- second connects
Touch plug；13- third contact plunger；The 4th contact plunger of 14-；The 5th contact plunger of 15-；The 6th contact plunger of 16-.
Specific embodiment
Light-emitting diode display of the invention and preparation method thereof is made below in conjunction with the drawings and specific embodiments further detailed
Explanation.According to following explanation, advantages and features of the invention will be become apparent from.Simplify very much it should be noted that attached drawing is all made of
Form and use non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.It should
Understand, in the following description, when layer, region, pattern or structure are referred to as in substrate, substrate, layer, region and/or pattern
When "upper", it can be on another layer or substrate, and/or there may also be insert layers.Similar, when layer is claimed
Make at another layer of "lower", it can be under another layer, and/or there may also be one or more insert layers.
Furthermore it is possible to be carried out based on attached drawing about the reference in each layer "up" and "down".
Term " first " " second " in the specification and in the claims etc. is used to carry out area between similar element
Point, and be not necessarily for describing certain order or time sequencing.It is appreciated that in the appropriate case, these terms so used
Alternatively, for example, may make invention as described herein embodiment can be different from it is as described herein or shown in other sequence
To operate.It is similar, if method described herein includes series of steps, and the sequence of these steps presented herein
It is not necessarily that the unique order of these steps can be performed, and some steps can be omitted and/or some not retouch herein
Other steps stated can be added to this method.If the component of the embodiment of the present invention is identical as the component in other figures in figure,
Although can all recognize these components easily in all figures, in order to keep the explanation of embodiment apparent, this specification is not
All identical components can be marked in each figure with identical label.
Fig. 1 is the flow diagram of the production method of the light-emitting diode display of one embodiment of the invention.Referring to Fig.1, this hair
The production method of the light-emitting diode display of bright embodiment can comprise the following steps that
S1: substrate is provided, the upper surface of the substrate is preset with multiple pixel display areas and for limiting the multiple picture
The non-display area of plain viewing area；
S2: sequentially forming metal layer and driving layer on the substrate, and the metal layer is covered in the upper table of the substrate
Face, the driving layer are covered in the upper surface of the metal layer, and the driving layer includes corresponding to the non-display area to be arranged
Multiple driving units；
S3: being sequentially etched the driving layer and the metal layer, corresponds to passing through for the multiple pixel display area to be formed
The opening for wearing the driving layer and multiple micropores in the metal layer；
S4: being embedded in multiple LED chips correspondingly in the multiple micropore, and the LED chip includes first electrode
And second electrode, the first electrode are located at the surface far from the substrate surface side of the LED chip；
S5: sequentially forming planarization layer and interconnection layer on the substrate, the planarization layer cover the driving layer with
And the upper surface of the multiple LED chip, the interconnection layer are located above the planarization layer and connect with the planarization layer
Touching, the interconnection layer make the first electrode of each LED chip be electrically connected to the corresponding driving unit.
Metal layer and driving layer is successively formed on the substrate in the production method of above-mentioned light-emitting diode display provided by the invention,
Then it performs etching, to correspond to intrabasement multiple pixel display area formation through the opening of the driving layer and be located at
Multiple micropores in the metal layer are embedded in multiple LED chips correspondingly in the multiple micropore, and utilize interconnection
The first electrode of each LED chip is electrically connected by technique with the corresponding driving unit.The production method and general half
Semiconductor process is compatible, is formed by light-emitting diode display, and the LED chip as pixel is in the micropore in metal layer, tool
It has the advantage that firstly, the electrode and driving layer electrode for being conducive to LED chip are in same plane, and are conducive to LED chip and turn
It is fixed when moving on to substrate and (LED chip is limited to the position of setting), so as to reduce LED chip and corresponding drive
The difficulty of electric interconnection is carried out between moving cell, while being conducive to improve display resolution；Secondly, integrated metal layer tool
There is good heating conduction, thus be conducive to the heat derives for distributing LED chip at work, to be conducive to promote LED
The performance of display；Again, metal layer can be effectively isolated the light of the LED chip sending positioned at adjacent pixel viewing area, thus
It is also beneficial to promote the display effect of light-emitting diode display.Below in conjunction with two specific embodiments to above-mentioned light-emitting diode display
Production method and the light-emitting diode display of formation are described in detail.
Embodiment one
Fig. 2 a to Fig. 2 e is section of the production method of the light-emitting diode display of one embodiment of the invention in implementation process
Schematic diagram.The production method of the light-emitting diode display of embodiment one and the LED of formation are shown below in conjunction with Fig. 1 and Fig. 2 a to Fig. 2 e
Device is illustrated.
Step S1 is first carried out in a referring to Figures 1 and 2, provides substrate 100, and the upper surface of the substrate 100 is preset with more
A pixel display area EA and non-display area NEA for limiting the multiple pixel display area EA.
In the present embodiment, substrate 100 is for the setting LED chip of surface side on it and its driving circuit, substrate 100
It can be flexible (flexible) substrate or rigidity (rigid) substrate, alternatively, it is also possible to be transparent plastics (plastic)
Substrate or glass substrate etc..For example, substrate 100 may include the transparent glass material that main component is silica, or packet
Including main component is polycarbonate (polycarbonate, PC), polyester (polyester, PET), cyclenes copolymer (cyclic
Olefin copolymer, COC) substrate or metal complex substrate-cyclenes copolymer (metallocene-based cyclic
Olefin copolymer, mCOC) etc. organic materials, substrate 100 can be not limited to listed type.The present embodiment
Substrate 100 be, for example, a thickness about 0.3mm~1.0mm transparent glass substrate, plurality of pixel display area EA can be
Preset output optical zone domain.
B referring to Figures 1 and 2 then executes step S2, and metal layer 110 and driving layer are sequentially formed in substrate 100
120, the metal layer 110 is covered in the upper surface of substrate 100, and the driving layer 120 is covered in the upper of the metal layer 110
Surface, the driving layer 120 include multiple driving units 10 corresponding to non-display area NEA setting.
Specifically, metal layer 110 can be for example, by techniques such as physical vapour deposition (PVD)s (PVD) in the upper surface of substrate 100
Deposition is formed, however, the present invention is not limited thereto, in the present embodiment, it is contemplated that shortens film formation time, metal layer 110 is also possible to one
It is attached at the metal foil of 100 upper surface of substrate.The thickness (or thickness of metal foil) of metal layer 110 is about 10 μm~1000 μm,
The material of metal layer 110 may include at least one of stainless steel, copper, nickel, chromium, zinc, aluminium metal, alternatively, metal layer 110
Material can also include at least one of iron, copper, nickel, chromium, zinc, aluminium element alloy.
Metal foil can be attached at the upper surface of substrate 100 by way of being bonded or being brazed.Referring to Fig. 2 b, for example,
An adhesive layer 101 can be initially formed in the upper surface of substrate 100, the material of adhesive layer 101 may include polyimides, polyester,
At least one of polymethyl methacrylate makes metal foil and substrate 100 fixed in a manner of through bonding.Alternatively, bonding
Layer 101 can be used as soldering flux, specifically may include at least one of iron, nickel, chromium, copper, tin, silver, zinc, copper, aluminium metal, with
Keep metal foil and substrate 100 fixed by soldering processes.Soldering processes are same using the soldering flux and weldment that are lower than weldment fusing point
When be heated to soldering flux fusion temperature after, using liquid flux filling solid workpieces gap make metal connect welding side
Method.Public technology is referred to about the concrete technology for attaching metal layer 110 using soldering processes to implement.
Driving layer 120 is formed in above metal layer 110, and in the present embodiment, driving layer 120 is multilayered structure, including
Multiple driving units 10 (are located at dotted line frame region in Fig. 2 b), each driving unit 10 for it is independent or with light-emitting diode display its
The subsequent LED chip corresponding to pixel display area EA setting of his setting signal co- controlling, that is, multiple driving units 10
Position corresponds to above-mentioned non-display area NEA and is formed.The driving unit 10 may include at least one such as thin film transistor (TFT)
(TFT) active parts.In an alternative embodiment of the invention, the driving unit may include such as two thin film transistor (TFT)s
With a capacitor (2T1C structure), so as to preferably control corresponding LED chip shutdown and brightness keep etc. characteristics.
Referring to Fig. 2 a, as an example, forming driving layer 120 may include following process.
First.A buffer layer 121 is formed in the upper surface of metal layer 110, to provide flat table on metal layer 110
Face, and preferable interfacial contact is provided for the other materials of subsequent deposition.Buffer layer 121 may include such as silica, nitridation
Silicon, silicon oxynitride, aluminium oxide, aluminium nitride, the inorganic material of titanium oxide or titanium nitride and/or such as polyimides, polyester or Asia
The organic material of gram force.
Then, driving unit 10, the film are formed using the manufacture craft of thin film transistor (TFT) above buffer layer 121
Transistor may include the thin film transistor (TFT) shown in active layer 122, gate electrode 124, source electrode 126a and drain electrode 126b, Fig. 2 a
For top gate structure, but in other embodiment of the present invention, the various of such as bottom grating structure are can also be used in the thin film transistor (TFT)
Type.During forming the thin film transistor (TFT), driving layer 120, which may also include, to be formed on active layer 122, for making
The gate insulating layer 123 that gate electrode 124 and active layer 122 insulate, and be formed on gate electrode 124, for making source electrode
The interlayer insulating film 125 that each of 126a and drain electrode 126b and gate electrode 124 insulate, driving layer 120 may also include covering
The protective layer 127 of the thin film transistor (TFT).Forming method about thin film transistor (TFT) is also referred to public technology implementation.It needs
It is noted that can be formed in the range of corresponding to the driving unit of a pixel display area EA (or a pixel)
More than one thin film transistor (TFT), and can also overlapping within the scope of the driving unit via for example above-mentioned functional material
One or more capacitors are formed, thin film transistor (TFT) can be connected according to certain Functional Design with capacitor and be formed for controlling
The driving unit that pixel be arranged in corresponding pixel display area EA works is made, subsequently through list will be driven correspondingly
It is first to connect to realize the Active control to each pixel light emitting structure with the electrode of corresponding pixel.
In addition, forming 110 He of metal layer to realize that the work to each pixel of light-emitting diode display controls
During driving layer 120 or front and back is formed, the non-display area that periphery can also be located in substrate 100 forms periphery
Circuit, the electric signal that public electrode is connect by driving unit 10 and with each pixel are drawn.In the present embodiment, metal
Layer 110 can be used as the public electrode of light-emitting diode display, can be electrically connected with the public electrode wire in the peripheral circuit.
After forming above-mentioned driving layer 120, c, executes step S3 referring to Figures 1 and 2, is sequentially etched driving layer 120 and gold
Belong to layer 110, to be formed corresponding to the multiple pixel display area EA through the multiple opening 120a and position for driving layer 120
Multiple micropore 110a in metal layer 110.
Specifically, the surface corresponding to pixel display area EA of driving layer 120 can be exposed first with light shield technique,
Then the surface that etching driving layer 120 is exposed corresponds to the surface of pixel display area EA up to exposing metal layer 110,
The opening 120a through driving layer 120 is formd in driving layer 120.The process for etching the driving layer 120 can be by primary
Or multiple dry method etch technology, dry etching gas can be selected from HBr, Cl2、SF6、O2、N2、NF3、Ar、He、CHF3、 C2F6
And CF4One or more of equal gases.
It, then can be for example, by wet etching work after exposing surface of the metal layer 110 corresponding to pixel display area EA
Skill etches downwards along the surface that metal layer 110 is exposed, to be formed and the multiple pixel display area in metal layer 110
EA multiple micropore 110a (below the opening 120a in driving layer 120 and with opening 120a perforation) correspondingly.This reality
It applies in example, the light emission side by the back side (side surface far from metal layer 110) of substrate 100 as light-emitting diode display, therefore excellent
Choosing etching is so that micropore 110a runs through metal layer 110.Further, in step S3, between 100 upper surface of substrate and metal layer
The part corresponding to pixel display area EA of adhesive layer 101 between 110, which can also be etched, to be removed or does not remove.
D referring to Figures 1 and 2 executes step S4, is embedded in multiple LED cores correspondingly in the multiple micropore 110a
Piece 1, the LED chip 1 include that first electrode P and second electrode N, the first electrode P are located at the separate of the LED chip 1
The surface of 100 upper surface side of substrate, first electrode P and second electrode N can be the electrode weldering formed on 1 surface of LED chip
Disk can shine with LED chip 1 after the connection of corresponding driving circuit.In the present embodiment, the LED chip 1 is electrode
Coplanar chip, here, " the coplanar chip of electrode " refers to that two extraction electrodes of LED chip are all set in the same side of chip
Surface, such as packed LED chip or flip LED chip can be selected as LED chip 1, in the present embodiment, the of LED chip 1
One electrode P and second electrode N is located at the same direction side surface of chip, that is, second electrode N also is located at the LED chip 1
100 upper surface side of separate substrate surface.LED chip 1 can emit with red (R), green (G), blue (B) color light
Or the light with ultraviolet wavelength, the LED light of ultraviolet wavelength can recycle fluorescent material carry out being converted into other it is visible
Color in optical range.LED chip 1 can be micro- LED, here, micro- LED can indicate about 1 micron to about 100 micron meters
Very little LED, but the present embodiment is not limited to this, and it is bigger than the size of micro- LED to be also possible to size for LED chip 1 in the present embodiment
Or small LED chip.It in a further embodiment, can also be embedding in the same micropore 110a according to technique and display needs
Enter more than one LED chip, also, multiple LED chips in the same micropore 110a are electrical connection, and integrally may be used
It is connect by a first electrode P and a second electrode N with external drive circuit.
LED chip 1 can be embedded in micropore 110a by way of bonding, and LED chip 1 is embedded into micropore 110a can
Including following procedure: instilling binder (not shown) in micropore 110a, or in LED chip 1 do not include first electrode P
Binder is coated with one or more surfaces of second electrode N；Then LED chip 1 is adsorbed on a transfer equipment, is shifted
It can be designed in equipment with the adsorption element for corresponding arrangement with micropore 110a, so as to once can be by multiple adjacent positions
LED chip 1 be transferred in micropore 110a；Then LED chip 1 is transferred in micropore 110a by transfer equipment, LED core
Piece 1 is sticked in micropore 110a by binder, and by solidification, LED chip 1 is fixed in micropore 110a.Perpendicular to substrate
The direction of 100 upper surfaces, about 10 μm~140 μm of the thickness of LED chip 1, it is preferred that LED chip 1 is being embedded in micropore 110a
Afterwards, the upper surface (or upper surface of first electrode P, second electrode N) of LED chip 1 more preferably can not higher than driving layer 120
To make according to the amount of the thickness of the rea adjusting metal layer 110 of the size of LED chip 1, pixel display area EA and binder
The upper surface for obtaining first electrode P is flushed with the source electrode 126a of thin film transistor (TFT) in corresponding driving unit and drain electrode 126b,
Its technical effect is that convenient for first electrode P and driving unit 10 are carried out electric interconnection.
Next e referring to Figures 1 and 2 executes step S5, planarization layer 130 and interconnection are sequentially formed in substrate 100
Layer 140, the planarization layer 130 cover the upper surface of the driving layer 120 and the multiple LED chip 1, the interconnection
Layer 140 is located on the planarization layer 130, and the interconnection layer 140 is electrically connected the first electrode P of each LED chip 1
To the corresponding driving unit 10.Planarization layer 130 is used for solve by the opening in driving layer 120, driving layer 120
Level difference caused by micropore 110a and LED chip 1 in 120a, metal layer 110, planarization layer 130 can also be filled out
Fill gap that may be present between opening 120a, micropore 110a and LED chip 1.Planarization layer 130 can be by single-layer or multi-layer
Organic material is formed.The organic material may include polymethyl methacrylate (PMMA) or polystyrene (PS), described organic
Material may also include phenolic group analog derivative, acrylic polymer, acid imide polymer, aryl oxide quasi polymer, amide and birds of the same feather flock together
Close object, fluorine-based polymer, paraxylene quasi polymer, vinyl alcohol polymer or their mixture etc..Planarization layer
130 can also be formed by the inorganic material layer and organic material layer being superimposed.
Interconnection layer 140 can be divided by the first contact plunger 11, the second contact plunger 12 being formed in planarization layer 130
It is not electrically connected with the driving unit 10 and LED chip 1 driven in layer 120, so that the first electrode P of each LED chip 1
Electric interconnection is realized with corresponding driving unit 10.In the present embodiment, driving unit 10 may include being formed in driving layer 120
Thin film transistor (TFT), when on the drain electrode 126b of thin film transistor (TFT) cover matcoveredn 127 when, the first contact plunger 11 also passes through
Protective layer 127 above logical drain electrode 126b.Interconnection layer 140 is also inserted by the second contact being formed in planarization layer 130
Plug 12 is electrically connected with the first electrode P of LED chip 1.First contact plunger 11, the second contact plunger 12 can be by flat
Change first to etch to form contact hole and then carry out such as electroplating technology filling conductive material in layer 130 and be formed, the material of interconnection layer 140
Material can be identical as the conductive material in contact hole, forms the first contact plunger 11, the second contact plunger 12 and interconnection layer
140 method can be implemented using public technology.
In the present embodiment, LED chip 1 is lateral LED chip, and second electrode N and first electrode P is located at the same of chip
One direction side.In turn, the public electrode of LED display, above-mentioned interconnection layer 140 be can be used as by metal layer 110 in this present embodiment
It can also be electrically connected, and led to the second electrode N of LED chip 1 by the third contact plunger 13 being located in planarization layer 130
It crosses the 4th contact plunger 14 to be electrically connected with metal layer 110, here, the 4th contact plunger 14 is through 130 lower section of planarization layer
Layer 120 is driven, so that interconnection layer 140 is contacted with metal layer 110.Namely the second electrode N and metal layer of each LED chip 1
110 form electrical contact, so that the public electrode of second electrode N and LED display to be formed forms electric interconnection.It needs
It is bright, although 140 part of interconnection layer for being connected to first electrode P can with 140 part of interconnection layer for being connected to second electrode P
It is formed by same film-forming process, but to avoid short circuit, the two can be made to disconnect by photoetching and patterning process.
As shown in Figure 2 e, the present embodiment includes: using the LED display that the forming method of above-mentioned light-emitting diode display is formed
Substrate 100；
The metal layer 110 being set in the substrate 100 is formed with multiple micropore 110a in the metal layer 110, often
LED chip 1 is embedded in a micropore 110a；And
The driving layer 120 being set on the metal layer 110, the driving layer 120 include and the multiple micropore 110a
One-to-one driving unit 10, each driving unit 10 are electrically connected with the LED chip 1 in corresponding micropore 110a.
Further, the LED chip 1 in the present embodiment is lateral LED chip, first electrode P and second electrode thereon
N is respectively positioned on the surface of the 100 surface side of separate substrate of LED chip 1, corresponding, the micropore formed in metal layer 110
110a is through metal layer 110 (metal layer 110 after i.e. etched is hollow grid structure).The light-emitting diode display may also include
The peripheral circuit (such as being formed in the peripheral region of upper surface of substrate) being formed in substrate 100, the peripheral circuit can be with
The multiple driving unit 10 is electrically connected, the metal layer 110 can be used as light-emitting diode display public electrode (or with the periphery
Public electrode wire connection in circuit).The light-emitting diode display may also include the planarization layer for being set to 120 top of driving layer
130 and it is set to the interconnection layer 140 of the top of planarization layer 130, is inserted by the first contact being set in planarization layer 130
11 to the 4th contact plungers 14 are filled in, the first electrode P of LED chip 1 is electrically connected to corresponding driving unit by interconnection layer 140
10, and the second electrode N of LED chip 1 is electrically connected to metal layer 110, to realize the electricity of LED chip 1 Yu its driving circuit
Gas interconnection.
Above-mentioned light-emitting diode display has the advantage that firstly, LED chip 1 is embedded within driving 120 lower metal layer of layer
In micropore 110a in 110, be conducive to the position that LED chip 1 is limited to setting, also, the electrode of LED chip 1 is set to
Close to or at the plane where driving layer 120, can use the processing procedures such as general film forming, photoetching, etching by LED chip with
Driving unit carries out electric interconnection, it can by the technical process compatible with semiconductor technology (such as metal interconnection process),
It avoids that LED chip 1 and driving circuit is made to carry out electric interconnection using the electrical connection technique such as wire bonding (wire bond),
The difficulty for realizing electric interconnection between LED chip 1 and corresponding driving unit 10 is advantageously reduced, and is also contributed to
Display resolution；Secondly as integrated metal layer 110 has good heating conduction, above-mentioned light-emitting diode display is in LED core
The heat that piece 1 generates when working is easy to be exported, and is conducive to the performance for promoting light-emitting diode display；Again, metal layer 110 can have
Effect isolation is located at the light that the LED chip 1 in adjacent cells issues, and is conducive to the display effect for promoting LED display.
Embodiment two
Fig. 3 a to Fig. 3 e is the production method of the light-emitting diode display of another embodiment of the present invention cuing open in implementation process
Face schematic diagram.It is illustrated below in conjunction with production method of Fig. 1 and Fig. 3 a to Fig. 3 e to the light-emitting diode display of embodiment two.
Step S1 is first carried out in a referring to Figure 1 and Figure 3, provides substrate 200, and the upper surface of the substrate 200 is preset with more
A pixel display area EA and non-display area NEA for limiting the multiple pixel display area EA.Wherein, substrate 200 can be selected
Select be the same as example 1, similar or different substrate, specifically, the substrate 200 of the present embodiment is it is also an option that such as metal
Equal opaque materials, the subsequent light-emitting diode display that is formed by from the side far from 200 back side of substrate go out light (i.e. top emitting are shown
Device).
B referring to Figure 1 and Figure 3 then executes step S2, sequentially forms metal layer 210 and driving layer on a substrate 200
220, the metal layer 210 is covered in the upper surface of substrate 200, and the driving layer 220 is covered in the upper of the metal layer 210
Surface, the driving layer 220 include multiple driving units 20 corresponding to non-display area NEA setting.The present embodiment is in base
The process that formation metal layer 210 and the method for driving layer 220 are referred to embodiment one on bottom 300 carries out.As shown in Figure 3b,
By step S2 be formed by driving layer 220 may include the buffer layer 221 sequentially formed in the upper surface of metal layer 210, it is thin
Active layer 222, gate insulating layer 223 (isolation active layer 222 and gate electrode 224), the grid of thin film transistor (TFT) of film transistor are electric
Pole 224, interlayer insulating film 225 (isolation gate electrode 224 and source electrode 226a and drain electrode 226b), the source electricity of thin film transistor (TFT)
Pole 226a and drain electrode 226b is formed in the upper surface of interlayer insulating film 225, also, layer 220 is driven to may also include described in covering
The protective layer 227 of thin film transistor (TFT) can not also form protective layer 227 in a further embodiment, but in insertion LED
Chip and then utilization planarization layer covering source electrode 226a and drain electrode 226b and LED chip.In addition, forming metal
During layer 210 and driving layer 220 or front and back is formed, the non-display area NEA of periphery can also be located on a substrate 200
Peripheral circuit is formed, the electric signal of driving unit 20 and the public electrode connecting with each pixel is drawn.This implementation
In example, metal layer 210 can be used as the public electrode of light-emitting diode display.
C referring to Figure 1 and Figure 3 executes step S3, is sequentially etched driving layer 220 and metal layer 210, corresponds to institute to be formed
The multiple opening 220a through driving layer 220 and multiple micropores in metal layer 210 for stating multiple pixel display area EA
210a。
It can use and form above-mentioned multiple opening 220a and micropore 210a with a kind of the same or similar technique of embodiment.
However, the present embodiment and embodiment one the difference is that, the multiple micropore 210a formed in metal layer 210 are not passed through
Metal layer 210 is worn, but the depth of micropore 210a is made to be less than the thickness of metal layer 210, for example, corresponding to micropore 210a's
Position, the thickness that etching sheet metal 210 makes it still retain about 10 μm~20 μm, it is therefore an objective to make the LED being embedded in later step
The electrode of chip is contacted with the bottom surface of micropore 210a, to form electrical connection.
D referring to Figure 1 and Figure 3 executes step S4, is embedded in multiple LED cores correspondingly in the multiple micropore 210a
Piece 2, in the present embodiment, the LED chip 1 is electrode antarafacial chip, here, " electrode antarafacial chip " refers to LED chip
Two extraction electrodes are respectively arranged at the opposite both side surface of chip, such as vertical LED chip can be selected as LED chip
2.Since the first electrode P and second electrode N of the LED chip 2 are located at the opposite both side surface of chip, described
One electrode P is set as the surface positioned at the 200 upper surface side of separate substrate of the LED chip 2, then second electrode N is located at institute
State the surface of the 100 upper surface side of close substrate of LED chip 2.LED chip 2 can be micro- LED or size than micro- LED's
The big or small LED of size.In the present embodiment, the vertical chip that may be selected to go out along the upper surface side where first electrode P light is made
For LED chip 2, preferably first electrode P is smaller in the upper surface occupied area, has the preferably top characteristics of luminescence in favor of being formed
Pixel.In a further embodiment, it according to technique and display needs, can also be embedded in not in the same micropore 210a
An only LED chip, also, multiple LED chips in the same micropore 210a are electrical connection, and can integrally be passed through
One first electrode P and a second electrode N are connect with external drive circuit.
It can be by being incited somebody to action with the same or similar process of method that LED chip 1 is embedded into micropore 110a in embodiment one
Multiple LED chips 2 are embedded in corresponding multiple micropore 210a.In the present embodiment, metal layer 210 can also be used as to be formed
The public electrode of light-emitting diode display, to the bottom surface of second electrode N and micropore 210a can be made directly to connect when being embedded in LED chip 2
Touching, so that second electrode N and public electrode be made to form electric interconnection.In order to make the metal of second electrode N Yu the bottom surface micropore 210a
Layer 210 forms excellent electric contact, can be coated with such as conducting resinl on the surface second electrode N with the metal with the bottom surface micropore 210a
Layer 210 is bonded.Preferably, after LED chip 2 is embedded in micropore 210a, the upper surface of LED chip 2 (or first electrode P's is upper
Surface) not higher than driving layer 220, it more preferably, can be golden according to the size of LED chip 2, the rea adjusting of pixel display area EA
Belong to the thickness of layer 210 and the amount of binder, so that the upper surface of the first electrode P of LED chip 2 and corresponding driving unit
The source electrode 226a and drain electrode 226b of thin film transistor (TFT) are flushed in 20, its technical effect is that being convenient for first electrode P and correspondence
Driving unit 20 carry out electric interconnection.However, the present invention is not limited thereto is embedded in micropore 210a in a further embodiment
The upper surface of LED chip can also be higher than the upper surface of driving layer 220.
Next e referring to Figure 1 and Figure 3 executes step S5, sequentially form planarization layer 230 and interconnection on a substrate 200
Layer 240, the planarization layer 230 cover the upper surface of the driving layer 220 and the multiple LED chip 2, the interconnection
Layer 240 is located on the planarization layer 230, and the interconnection layer 240 is electrically connected the first electrode P of each LED chip 2
To the corresponding driving unit 20.Planarization layer 230 and interconnection layer 240 in the present embodiment can use and embodiment one
The same or similar material and method are formed, and planarization layer 230 is preferably the preferable material of translucency, in order to be formed
LED chip 2 goes out light along towards the side of planarization layer 230 in light-emitting diode display.Planarization layer 230 is used for solve by driving layer
220, the opening 220a in layer 220, level difference caused by micropore 210a and LED chip 2 in metal layer 210 are driven,
And gap that may be present between opening 220a, micropore 210a and LED chip 2 can also be filled.Interconnection layer 240 is for making
The first electrode P for obtaining each LED chip 2 realizes electric interconnection with corresponding driving unit 20, specifically, interconnection layer 240 can lead to
It crosses the 5th contact plunger 15 being formed in planarization layer 230 and the driving unit 20 in driving layer 220 (is specifically, for example, it
In thin film transistor (TFT)) electrical connection so that the first electrode P of each LED chip 1 realizes electricity with corresponding driving unit 10
Gas interconnection.In the present embodiment, driving unit 20 may include the thin film transistor (TFT) being formed in driving layer 120, work as film crystal
When covering matcoveredn 227 on the drain electrode 226b of pipe, the 5th contact plunger 15 also penetrates through the protective layer above drain electrode 226b
227.Interconnection layer 240 also passes through the first electrode P for the 6th contact plunger 16 and LED chip 2 being formed in planarization layer 230
Electrical connection.It is vertical LED chip by LED chip 2 in this present embodiment, first electrode P and second electrode N can distinguish
It is electrically connected, drives with the metal layer 210 (as public electrode) of 220 lower section of driving unit 20 and driving layer in driving layer 220
Moving cell 20 and metal layer 210 may be designed as and are formed in the connection of the peripheral circuit in substrate 200, and then can be by external electrical
Source and driver carry out shutdown and other display characteristics of control LED chip 2.
As shown in Figure 3 e, the present embodiment includes: using the LED display that the forming method of above-mentioned light-emitting diode display is formed
Substrate 200；
The metal layer 210 being set in the substrate 200 is formed with multiple micropore 210a in the metal layer 210, often
LED chip 2 is embedded in a micropore 210a；And
The driving layer 220 being set on the metal layer 210, the driving layer 220 include and the multiple micropore 210a
One-to-one driving unit 20, each driving unit 20 are electrically connected with the LED chip 2 in corresponding micropore 210a.
Further, the LED chip 2 in the present embodiment is electrode antarafacial chip, the electricity of first electrode P and second thereon
Pole N is located at the surface of the 100 upper surface side of separate substrate of LED chip 2 and the table close to 100 upper surface side of substrate
Face, corresponding, in the direction perpendicular to 100 upper surface of substrate, the depth of micropore 210a is less than the thickness of metal layer 210.It is described
Light-emitting diode display may also include the peripheral circuit (such as being formed in the peripheral region of upper surface of substrate) being formed in substrate 100,
The peripheral circuit can be electrically connected with the multiple driving unit 20, and the metal layer 210 can be used as the public of light-emitting diode display
Electrode (or being connect with the public electrode wire in the peripheral circuit), also, the second electrode N of LED chip 2 by with micropore
210 surface of metal layer contact in 210a is to form electric interconnection with the public electrode of light-emitting diode display.The light-emitting diode display
It may also include the planarization layer 230 for being set to 220 top of driving layer and the interconnection layer for being set to 230 top of planarization layer
240, by the 5th contact plunger 15 being set in planarization layer 230 and the 6th contact plunger 16, interconnection layer 240 is by first
Electrode P is electrically connected to corresponding driving unit 20.
Above-mentioned light-emitting diode display has the advantage that firstly, LED chip 2 is embedded within driving 220 lower metal layer of layer
In micropore 210a in 210, be conducive to the position that LED chip 1 is limited to setting, also, the electrode of LED chip 2 is set to
Close to or at the plane where driving layer 220, can use the processing procedures such as general film forming, photoetching, etching by LED chip with
Driving unit carries out electric interconnection, and then reduces the difficulty that electric interconnection is realized between LED chip 2 and corresponding driving unit 20
Degree, while being conducive to improve display resolution；Secondly, integrated metal layer 210 has good heating conduction, thus have
Conducive to the heat derives for distributing LED chip 2 at work, be conducive to the performance for promoting light-emitting diode display；Again, metal layer
210 can be effectively isolated the light that the LED chip 2 in adjacent cells 210a issues, and be conducive to promote the aobvious of light-emitting diode display
Show effect.
Light-emitting diode display of the invention is not limited to production method described in above-described embodiment, in other embodiment
In, in order to form light-emitting diode display of the invention, after (or deposition) metal layer can also be engaged in substrate, first to metal layer
It performs etching to form microwell array, corresponding LED chip (such as lateral chip) is then embedded in micropore, is then re-formed
The driving layer of metal layer and LED chip is covered, and makes that the driving unit in layer is driven to be electrically connected with the LED chip in micropore；It should
Method can save the step of etching driving layer is to form the opening for corresponding to pixel display area, such as when LED display is
When bottom emitting display (such as substrate is for transparent substrates and when micropore runs through metal layer), driving unit also be can be set in micro-
The area just above in hole is conducive to the aperture opening ratio for improving pixel and improves display resolution.
It should be noted that each embodiment in this specification is described in a progressive manner, each embodiment emphasis is said
Bright is the difference from other embodiments, and identical and similar part may refer to each other between each embodiment.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of interest field of the present invention,
Anyone skilled in the art without departing from the spirit and scope of the present invention, may be by the method and skill of the disclosure above
Art content makes possible variation and modification to technical solution of the present invention, therefore, all without departing from technical solution of the present invention
Hold, any simple modifications, equivalents, and modifications to the above embodiments, belong to according to the technical essence of the invention
The protection scope of technical solution of the present invention.
Claims (10)
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