CN109285703A - The method for improving the method for tantalum capacitor voltage endurance capability and making tantalum capacitor - Google Patents
The method for improving the method for tantalum capacitor voltage endurance capability and making tantalum capacitor Download PDFInfo
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- CN109285703A CN109285703A CN201811264115.6A CN201811264115A CN109285703A CN 109285703 A CN109285703 A CN 109285703A CN 201811264115 A CN201811264115 A CN 201811264115A CN 109285703 A CN109285703 A CN 109285703A
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 255
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 251
- 239000003990 capacitor Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000012085 test solution Substances 0.000 claims abstract description 59
- 230000003647 oxidation Effects 0.000 claims abstract description 38
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 38
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 48
- 239000011248 coating agent Substances 0.000 claims description 42
- 238000000576 coating method Methods 0.000 claims description 42
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 29
- 238000012545 processing Methods 0.000 claims description 25
- 238000001035 drying Methods 0.000 claims description 23
- 239000002253 acid Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 239000003513 alkali Substances 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- 239000002344 surface layer Substances 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The present invention provides a kind of method for improving tantalum capacitor voltage endurance capability and the methods for making tantalum capacitor, are related to field of electronic devices.The present invention provides a kind of methods for improving tantalum capacitor pressure resistance, comprising: provides one for constituting the tantalum block of tantalum capacitor；The tantalum block is immersed in the alkaline test solution under preset temperature；The voltage and current for applying parameter preset to the tantalum block being immersed in the alkaline test solution forms one layer of first medium oxidation film on the tantalum block surface.The present invention improves the voltage endurance capability of tantalum formula capacitor to increase the thickness of tantalum capacitor dielectric layer in the case where not changing tantalum capacitor shape size, by increasing by one layer of dielectric oxide film on tantalum block surface.
Description
Technical field
The present invention relates to field of electronic devices, in particular to a kind of method for improving tantalum capacitor voltage endurance capability and
The method for making tantalum capacitor.
Background technique
Currently, with the continuous development of electronic technology, applying most power technologies and place especially as tantalum capacitor
There is major transformation in reason device technology, and solid electrolyte Ta capacitor miniaturization, the trend of ultralow ESRization are increasingly apparent, for
The requirement of solid electrolyte Ta capacitor voltage endurance capability is also higher and higher.
For tantalum capacitor, voltage endurance capability is determined by the height of formation voltage, for the solid electrolytic of same specification
It is better to form more high then its voltage endurance capability of voltage for matter tantalum capacitor.But with the continuous development of electronic technology, solid electrolytic
Matter tantalum capacitor increasingly minimizes, and the voltage endurance capability for improving tantalum capacitor under this situation is difficult to implement.
Summary of the invention
The purpose of the present invention is to provide it is a kind of improve tantalum capacitor pressure resistance method and production tantalum capacitor method,
Effectively to improve the above problem.
The embodiment of the present invention is achieved in that
In a first aspect, the embodiment of the present invention provides a kind of method for improving tantalum capacitor pressure resistance, comprising: provide one and be used for structure
At the tantalum block of tantalum capacitor；The tantalum block is immersed in the alkaline test solution under preset temperature；To being immersed in the alkaline test solution
In tantalum block apply parameter preset voltage and current, the tantalum block surface formed one layer of first medium oxidation film.
The technical solution provided with reference to the above first aspect impregnates the tantalum block in some possible implementations
In the alkaline test solution that temperature is 5~15 DEG C.
The technical solution provided with reference to the above first aspect, in some possible implementations, to being immersed in the alkali
Property test solution in tantalum block apply the A times of tantalum capacitor voltage rating voltage and 40~60 amperes of electric current, wherein it is described
The value range of A is the arbitrary number in 5~6.
The technical solution provided with reference to the above first aspect, in some possible implementations, to being immersed in the alkali
Tantalum block in property test solution applies when a length of 1~5min of the voltage and current.
The technical solution provided with reference to the above first aspect, in some possible implementations, to described first
The tantalum block of dielectric oxide film boil wash, drying and processing；It is described boil inside the tantalum block washed, after drying and processing form second
Dielectric oxide film obtains the deielectric-coating tantalum block for being attached with two layers of dielectric oxide film.
The technical solution provided with reference to the above first aspect, in some possible implementations, by it is described boil wash,
Tantalum block after drying and processing is immersed in acid test solution；Apply voltage and current to the tantalum block being immersed in the acid test solution,
One layer of second medium oxidation film is formed inside the tantalum block, obtains the deielectric-coating tantalum block for being attached with two layers of dielectric oxide film.
The technical solution provided with reference to the above first aspect, in some possible implementations, by it is described boil wash,
Tantalum block after drying and processing is immersed in nitric acid test solution；Apply voltage and current to the tantalum block being immersed in the nitric acid solution.
The technical solution provided with reference to the above first aspect impregnates the tantalum block in some possible implementations
In the lithium hydroxide solution under preset temperature；To the tantalum block that is immersed in lithium hydroxide solution apply parameter preset voltage and
Electric current.
The technical solution provided with reference to the above first aspect, in some possible implementations, by the deielectric-coating tantalum
Block is immersed in manganese nitrate solution, obtains forming the deielectric-coating tantalum block of one layer of manganese dioxide layer on deielectric-coating tantalum block surface；
It assembles to form the tantalum capacitor based on the deielectric-coating tantalum block and electrode slice for being attached with manganese dioxide layer.
Second aspect, the embodiment of the present invention provide a kind of method for making tantalum capacitor, comprising: provide one for constituting tantalum
The tantalum block of capacitor；The tantalum block is immersed in the alkaline test solution under preset temperature；To being immersed in the alkaline test solution
Tantalum block applies the voltage and current of parameter preset, forms one layer of first medium oxidation film on the tantalum block surface；To with described
The tantalum block of first medium oxidation film boil wash, drying and processing；It is described boil inside the tantalum block washed, after drying and processing formed
Second medium oxidation film obtains the deielectric-coating tantalum block for being attached with two layers of dielectric oxide film；The deielectric-coating tantalum block is immersed in nitre
In sour manganese solution, obtain forming the deielectric-coating tantalum block of one layer of manganese dioxide layer on deielectric-coating tantalum block surface；Based on being attached with
The deielectric-coating tantalum block and electrode slice of manganese dioxide layer assemble to form the tantalum capacitor.
The beneficial effects of the present invention are:
Tantalum block is immersed in the alkalinity under preset temperature and tried by a kind of method for improving tantalum capacitor pressure resistance provided by the invention
In liquid；The voltage and current for applying parameter preset forms one layer of dielectric oxide film on the tantalum block surface.Do not changing tantalum capacitor
In the case where device shape size, by increasing by one layer of dielectric oxide film on tantalum block surface, to increase tantalum capacitor dielectric layer
Thickness, improve the voltage endurance capability of tantalum formula capacitor.
Other features and advantages of the present invention will be illustrated in subsequent specification, also, partly be become from specification
It is clear that being understood by implementing the embodiment of the present invention.The objectives and other advantages of the invention can be by written
Specifically noted structure is achieved and obtained in specification, claims and attached drawing.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is a kind of method flow diagram for improving tantalum capacitor voltage endurance capability provided in an embodiment of the present invention；
Fig. 2 is the method flow diagram that a kind of tantalum block provided in an embodiment of the present invention forms second medium oxidation film；
Fig. 3 is a kind of method flow diagram for obtaining the step S202 in Fig. 2 provided in an embodiment of the present invention；
Fig. 4 is the method flow diagram that a kind of tantalum block provided in an embodiment of the present invention forms manganese dioxide layer；
Fig. 5 is a kind of method flow diagram for making tantalum capacitor provided in an embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the embodiment of the present invention, it should be noted that indicating position or positional relationship is based on shown in attached drawings
The orientation or positional relationship invention product using when the orientation or positional relationship usually put or this field
Orientation or positional relationship that technical staff usually understands or the invention product using when the orientation usually put or position close
System, is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have
Specific orientation is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " the
One ", " second ", " third " etc. are only used for distinguishing description, are not understood to indicate or imply relative importance.
In the description of the embodiment of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term
" setting ", " installation ", " connection " shall be understood in a broad sense, for example, it may be fixedly connected, may be a detachable connection or one
Connect to body；It can be and be directly connected to, can also be indirectly connected with by intermediary.For those of ordinary skill in the art and
Speech, can understand the concrete meaning of above-mentioned term in the present invention with concrete condition.
First embodiment
Referring to Fig. 1, step includes: S101-S103 the present embodiment provides a kind of method for improving tantalum capacitor pressure resistance.
S101: one is provided for constituting the tantalum block of tantalum capacitor.
Tantalum metal powder is pressed into bulk, sinters matrix into, forms a complete tantalum block, the tantalum block is as tantalum capacitor
The anode of device.
S102: the tantalum block is immersed in the alkaline test solution under preset temperature.
By the tantalum block of above-mentioned formation be completely immersed in temperature be preset temperature under alkaline test solution in so that entire tantalum block
It is completely submerged in alkaline test solution, optionally, which is 5~15 DEG C, wherein it should be noted that the default temperature
Degree is also possible to other close ranges, such as 2~20 DEG C.As an alternative embodiment, the alkali that the present embodiment uses
Property test solution be lithium hydroxide solution.Correspondingly, other alkaline test solutions, such as potassium hydroxide etc. can also be used.In the present embodiment,
The tantalum block of above-mentioned formation is completely immersed in the lithium hydroxide solution that temperature is 5~15 DEG C.
S103: apply the voltage and current of parameter preset to the tantalum block being immersed in the alkaline test solution, in the tantalum block
Surface forms one layer of first medium oxidation film.
Optionally, apply the electricity of the voltage rating of the A times of tantalum capacitor to the tantalum block being immersed in the alkaline test solution
Pressure and 40~60 amperes of electric current, wherein the value range of the A is the arbitrary number in 5~6, such as 5,5.1,5.3,5.4,
5.5,5.6,5.7,5.8 etc..It should be noted that the voltage rating of the tantalum capacitor of different size is different, therefore to being immersed in
The voltage for the voltage rating that tantalum block in the alkalinity test solution applies the A times of tantalum capacitor needs the capacitor according to different size
Device and set.It is understood that the value range of A is not limited to 5~6, for example, it may be the number being closer to 5, such as
4.7,4.8,4.9 etc., similarly it is also possible to the number being closer to 6, such as 6.1,6.2,6.3.
Optionally, apply when a length of 1~5min of the voltage and current to the tantalum block being immersed in the alkaline test solution.
It should be noted that since tantalum capacitor can have different specifications, for applying to the tantalum block being immersed in alkaline test solution
The duration of voltage and current is also required to according to the specification of practical tantalum capacitor and specific control.To the tantalum being immersed in alkaline test solution
Block applies the voltage and current so that tantalum block surface forms one layer of first medium oxidation film and can stop applying voltage and current.
Optionally, in the present embodiment, apply the voltage rating 5 of tantalum capacitor to the tantalum block being immersed in lithium hydroxide solution
~6 times of voltages and 40~60 amperes of electric current, the time of application are 1~5min.
Through the above steps, in the case where not changing tantalum capacitor shape size, by increasing by one layer on tantalum block surface
Dielectric oxide film improves the voltage endurance capability of tantalum formula capacitor to increase the thickness of tantalum capacitor dielectric layer.
Referring to Fig. 2, the tantalum block surface formed one layer of first medium oxidation film after, tantalum block can also be carried out into
The processing of one step, forms one layer of second medium oxidation film, step includes: S201-S202.
S201: to the first medium oxidation film tantalum block boil wash, drying and processing.
The above-mentioned tantalum block with first medium oxidation film boil washing, boils and carries out drying and processing after washing a period of time.
S202: boil formation second medium oxidation film inside the tantalum block washed, after drying and processing described, be attached with
The deielectric-coating tantalum block of two layers of dielectric oxide film.
Tantalum block with the first medium oxidation film boil and is washed, after the completion of drying and processing, further in tantalum block
Portion forms second medium oxidation film, obtains the deielectric-coating tantalum block for being attached with two layers of dielectric oxide film.As a kind of optional implementation
Mode can be illustrated (S202) in the above process by step shown in Fig. 3.
The step of S202 further include: S301-S302.
S301: by it is described boil wash, the tantalum block after drying and processing is immersed in acid test solution.
Optionally, will carry out boiling wash, the tantalum block after drying and processing is immersed in nitric acid test solution, it is to be understood that it is described
Acid test solution is also possible to other test solutions, such as phosphoric acid etc..It therefore cannot be using the material in the present embodiment as restriction.
S302: apply voltage and current to the tantalum block being immersed in the acid test solution, form one inside the tantalum block
Layer second medium oxidation film, obtains the deielectric-coating tantalum block for being attached with two layers of dielectric oxide film.
Optionally, apply the voltage and current for being no more than tantalum block process stipulation to the tantalum block being immersed in nitric acid, described
One layer of second medium oxidation film is formed inside tantalum block, obtains the deielectric-coating tantalum block for being attached with two layers of dielectric oxide film.It needs to illustrate
, the voltage and current that this step applies to the tantalum block being immersed in nitric acid is the voltage and current of process stipulation, as tantalum
The voltage and current of one layer of second medium oxidation film can be formed inside block.The step formed second medium oxidation film with it is above-mentioned
Step forms dielectric layer of the first medium oxidation film as the tantalum capacitor.
Referring to Fig. 4, formed after one layer of second medium oxidation film inside the tantalum block, tantalum block can also be carried out into
The processing of one step, so that tantalum block surface forms one layer of manganese dioxide, step includes: S401-S402.
S401: the deielectric-coating tantalum block is immersed in manganese nitrate solution, obtains being formed on deielectric-coating tantalum block surface
The deielectric-coating tantalum block of one layer of manganese dioxide layer.
Manganese nitrate solution is attached to deielectric-coating tantalum block surface by being decomposed thermally to form manganese dioxide.The manganese dioxide attachment
One layer of manganese dioxide layer, cathode of the manganese dioxide as tantalum capacitor are formed on deielectric-coating tantalum block surface.
S402: it assembles to form the tantalum capacitor based on the deielectric-coating tantalum block and electrode slice for being attached with manganese dioxide layer.
Wherein, anode of the tantalum block as tantalum capacitor, cathode of the manganese dioxide layer as tantalum capacitor, electrode slice include just
Pole electrode slice and negative electricity pole piece, electrode film are connected by a tantalum wire with tantalum block, and negative electrode plate is connect with manganese dioxide layer,
Tantalum capacitor is formed by assembling.
The tantalum capacitor that middle step obtains through this embodiment passes through in the case where not changing tantalum capacitor shape size
Increase by one layer of dielectric oxide film on tantalum block surface and improves tantalum formula capacitor to increase the thickness of tantalum capacitor dielectric layer
Voltage endurance capability.
Second embodiment
Referring to Fig. 5, the present embodiment provides a kind of method for making tantalum capacitor, step includes: S501-S507.
S501: one is provided for constituting the tantalum block of tantalum capacitor.
Tantalum metal powder is pressed into bulk, sinters matrix into, forms a complete tantalum block, the tantalum block is as tantalum capacitor
The anode of device.
S502: the tantalum block is immersed in the alkaline test solution under preset temperature.
By the tantalum block of above-mentioned formation be completely immersed in temperature be preset temperature under alkaline test solution in so that entire tantalum block
It is completely submerged in alkaline test solution, optionally, which is 5~15 DEG C, wherein it should be noted that the default temperature
Degree is also possible to other close ranges, such as 2~20 DEG C.As an alternative embodiment, the alkali that the present embodiment uses
Property test solution be lithium hydroxide solution.Correspondingly, other alkaline test solutions, such as potassium hydroxide etc. can also be used.In the present embodiment,
The tantalum block of above-mentioned formation is completely immersed in the lithium hydroxide solution that temperature is 5~15 DEG C.
S503: apply the voltage and current of parameter preset to the tantalum block being immersed in the alkaline test solution, in the tantalum block
Surface forms one layer of first medium oxidation film.
Optionally, apply the electricity of the voltage rating of the A times of tantalum capacitor to the tantalum block being immersed in the alkaline test solution
Pressure and 40~60 amperes of electric current, wherein the value range of the A is the arbitrary number in 5~6, such as 5,5.1,5.3,5.4,
5.5,5.6,5.7,5.8 etc..It should be noted that the voltage rating of the tantalum capacitor of different size is different, therefore to being immersed in
The voltage for the voltage rating that tantalum block in the alkalinity test solution applies the A times of tantalum capacitor needs the capacitor according to different size
Device and set.It is understood that the value range of A is not limited to 5~6, for example, it may be the number being closer to 5, such as
4.7,4.8,4.9 etc., similarly it is also possible to the number being closer to 6, such as 6.1,6.2,6.3.
Optionally, apply when a length of 1~5min of the voltage and current to the tantalum block being immersed in the alkaline test solution.
It should be noted that since tantalum capacitor can have different specifications, for applying to the tantalum block being immersed in alkaline test solution
The duration of voltage and current is also required to according to the specification of practical tantalum capacitor and specific control.To the tantalum being immersed in alkaline test solution
Block applies the voltage and current so that tantalum block surface forms one layer of first medium oxidation film and can stop applying voltage and current.
Optionally, in the present embodiment, apply the voltage rating 5 of tantalum capacitor to the tantalum block being immersed in lithium hydroxide solution
~6 times of voltages and 40~60 amperes of electric current, the time of application are 1~5min.
S504: to the first medium oxidation film tantalum block boil wash, drying and processing.
S505: boil formation second medium oxidation film inside the tantalum block washed, after drying and processing described, be attached with
The deielectric-coating tantalum block of two layers of dielectric oxide film.
By it is described boil wash, the tantalum block after drying and processing is immersed in acid test solution；To being immersed in the acid test solution
In tantalum block apply voltage and current, inside the tantalum block formed one layer of second medium oxidation film, obtain being attached with two layers of Jie
The deielectric-coating tantalum block of matter oxidation film.
S506: the deielectric-coating tantalum block is immersed in manganese nitrate solution, obtains being formed on deielectric-coating tantalum block surface
The deielectric-coating tantalum block of one layer of manganese dioxide layer.
Manganese nitrate solution is attached to deielectric-coating tantalum block surface by being decomposed thermally to form manganese dioxide.The manganese dioxide attachment
One layer of manganese dioxide layer, cathode of the manganese dioxide as tantalum capacitor are formed on deielectric-coating tantalum block surface.
S507: it assembles to form the tantalum capacitor based on the deielectric-coating tantalum block and electrode slice for being attached with manganese dioxide layer.
Wherein, anode of the tantalum block as tantalum capacitor, cathode of the manganese dioxide layer as tantalum capacitor, electrode slice include just
Pole electrode slice and negative electricity pole piece, electrode film are connected by a tantalum wire with tantalum block, and negative electrode plate is connect with manganese dioxide layer,
Tantalum capacitor is formed by assembling.
The tantalum capacitor formed through the above steps, in the case where not changing tantalum capacitor shape size, by tantalum
Block surface increases by one layer of dielectric oxide film and improves the resistance to of tantalum formula capacitor to increase the thickness of tantalum capacitor dielectric layer
Pressure energy power.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
These are only the preferred embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is made it is any modification,
Equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of method for improving tantalum capacitor pressure resistance characterized by comprising
One is provided for constituting the tantalum block of tantalum capacitor；
The tantalum block is immersed in the alkaline test solution under preset temperature；
The voltage and current for applying parameter preset to the tantalum block being immersed in the alkaline test solution forms one on the tantalum block surface
Layer first medium oxidation film.
2. the method according to claim 1, wherein the alkalinity tantalum block being immersed under preset temperature
In test solution, comprising:
The tantalum block is immersed in the alkaline test solution that temperature is 5~15 DEG C.
3. the method according to claim 1, wherein described apply to the tantalum block being immersed in the alkaline test solution
The voltage and current of parameter preset, comprising:
Apply the voltage and 40~60 peaces of the voltage rating of the A times of tantalum capacitor to the tantalum block being immersed in the alkaline test solution
The electric current of training, wherein the value range of the A is the arbitrary number in 5~6.
4. the method according to claim 1 for improving tantalum capacitor pressure resistance, which is characterized in that described to being immersed in the alkali
Property test solution in tantalum block apply parameter preset voltage and current, comprising:
Apply when a length of 1~5min of the voltage and current to the tantalum block being immersed in the alkaline test solution.
5. the method for tantalum capacitor pressure resistance is improved described in any one of -4 according to claim 1, which is characterized in that described
The voltage and current for applying parameter preset to the tantalum block being immersed in the alkaline test solution forms one layer the on the tantalum block surface
After one dielectric oxide film, the method also includes:
To with the first medium oxidation film tantalum block boil wash, drying and processing；
Boil formation second medium oxidation film inside the tantalum block washed, after drying and processing described, obtains being attached with two layers of medium
The deielectric-coating tantalum block of oxidation film.
6. according to the method described in claim 5, it is characterized in that, described carry out boiling the tantalum block washed, after drying and processing described
Inside forms second medium oxidation film, obtains the deielectric-coating tantalum block for being attached with two layers of dielectric oxide film, comprising:
By it is described boil wash, the tantalum block after drying and processing is immersed in acid test solution；
Apply voltage and current to the tantalum block being immersed in the acid test solution, forms one layer of second medium inside the tantalum block
Oxidation film obtains the deielectric-coating tantalum block for being attached with two layers of dielectric oxide film.
7. according to the method described in claim 6, it is characterized in that, described carry out boiling the tantalum block washed, after drying and processing by described
It is immersed in acid test solution, comprising:
By it is described boil wash, the tantalum block after drying and processing is immersed in nitric acid test solution；
It is correspondingly, described to apply voltage and current to the tantalum block being immersed in the acid test solution, comprising:
It is described to apply voltage and current to the tantalum block being immersed in the nitric acid solution.
8. the method according to claim 1, wherein the alkalinity tantalum block being immersed under preset temperature
In test solution, comprising:
The tantalum block is immersed in the lithium hydroxide solution under preset temperature；
Correspondingly, the voltage and current for applying parameter preset to the tantalum block being immersed in the alkaline test solution, comprising:
The voltage and current for applying parameter preset to the tantalum block being immersed in lithium hydroxide solution.
9. according to the method described in claim 5, it is characterized in that, in the deielectric-coating tantalum for obtaining being attached with two layers of dielectric oxide film
After block, the method also includes；
The deielectric-coating tantalum block is immersed in manganese nitrate solution, obtains forming one layer of titanium dioxide on deielectric-coating tantalum block surface
The deielectric-coating tantalum block of manganese layer；
It assembles to form the tantalum capacitor based on the deielectric-coating tantalum block and electrode slice for being attached with manganese dioxide layer.
10. a kind of method for making tantalum capacitor characterized by comprising
One is provided for constituting the tantalum block of tantalum capacitor；
The tantalum block is immersed in the alkaline test solution under preset temperature；
The voltage and current for applying parameter preset to the tantalum block being immersed in the alkaline test solution forms one on the tantalum block surface
Layer first medium oxidation film；
To with the first medium oxidation film tantalum block boil wash, drying and processing；
Boil formation second medium oxidation film inside the tantalum block washed, after drying and processing described, obtains being attached with two layers of medium
The deielectric-coating tantalum block of oxidation film；
The deielectric-coating tantalum block is immersed in manganese nitrate solution, obtains forming one layer of titanium dioxide on deielectric-coating tantalum block surface
The deielectric-coating tantalum block of manganese layer；
It assembles to form the tantalum capacitor based on the deielectric-coating tantalum block and electrode slice for being attached with manganese dioxide layer.
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Cited By (1)
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| CN113628886A (en) * | 2021-08-16 | 2021-11-09 | 标瑞新能源技术(重庆)有限公司 | Method and material for coating cathode of tantalum electrolytic capacitor |
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