CN109283474A - A semiconductor magnetic field sensor and its operating method - Google Patents
A semiconductor magnetic field sensor and its operating method Download PDFInfo
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- CN109283474A CN109283474A CN201811366123.1A CN201811366123A CN109283474A CN 109283474 A CN109283474 A CN 109283474A CN 201811366123 A CN201811366123 A CN 201811366123A CN 109283474 A CN109283474 A CN 109283474A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
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Abstract
本发明涉及传感器技术领域，公开了一种半导体磁场传感器及其操作方法，该半导体磁场传感器包括：磁敏三级管与电致变色单元，磁敏三极管包括发射极与集电极，发射极与电源线相连，集电极与第一开关的一端相邻，第一开关的另一端分别与电致变色单元的第一电极和第二开关的一端相连，第二开关的另一端与电源的一端相连，电源的另一端与电致变色单元的第二电极分别与地线相连，磁敏三极管将磁场信息转化为电信号，电致变色单元接收电信号并通过颜色变化显示磁场信息。上述半导体磁场传感器无需额外增加复杂的接口电路，通过人眼即可直接快速获得当前环境的磁场信息，具有结构简单、成本低、体积小、功耗低、操作简单、使用方便等优点。
The invention relates to the technical field of sensors, and discloses a semiconductor magnetic field sensor and an operation method thereof. The semiconductor magnetic field sensor comprises: a magnetic triode and an electrochromic unit, the magnetic triode includes an emitter and a collector, an emitter and a power supply The line is connected, the collector is adjacent to one end of the first switch, the other end of the first switch is respectively connected to the first electrode of the electrochromic unit and one end of the second switch, and the other end of the second switch is connected to one end of the power supply, The other end of the power supply and the second electrode of the electrochromic unit are respectively connected to the ground wire. The magneto-sensitive triode converts the magnetic field information into electrical signals. The electrochromic unit receives the electrical signals and displays the magnetic field information through color changes. The above-mentioned semiconductor magnetic field sensor does not require additional complex interface circuits, and can directly and quickly obtain the magnetic field information of the current environment through the human eye, and has the advantages of simple structure, low cost, small size, low power consumption, simple operation, and convenient use.
Description
Technical field
It is the invention belongs to sensor technical field, in particular to a kind of to show that the Semiconductor magnetic field in magnetic field senses by color
Device and its operating method.
Background technique
Magnetic field sensor is that have for the amount of various magnetic fields and its variation present in nature or human society to be transformed into
The device of electric signal output.Semiconductor Magnetic Field Sensors are a kind of important kinds of magnetic field sensor, have structure and preparation work
Skill is simple, at low cost, consistency is good and is easy to the advantages that interface circuit is integrated.Semiconductor Magnetic Field Sensors mainly include two poles
Pipe and two kinds of forms of transistor, compared to also the former, Semiconductor Magnetic Field Sensors based on transistor (or for magnetic sensitive transistor,
Magnetic transister) have many advantages, such as that sensitivity, flexible operation mode are various, it is current one of research hotspot therefore.
Wherein, magnetic sensitive transistor is similar with common bipolar transistor, have 3 terminals (respectively emitter, base stage and
Collector), under the action of an external magnetic field, its collector current and base current can be sent out with the direction in magnetic field and intensity
Changing converts magnetic fields to electric signal to realize.In order to finally realize the measurement in magnetic field, which also needs further to make
The detection and display (or reading) of electric signal are carried out with interface circuit.
However, interface circuit uses the measurement accuracy on the one hand helping to improve sensor；But then, Que Yezeng
The difficulty and cost of the design and preparation of sensor are added, and have also added the volume and power consumption of sensor, for some right
Sensor cost and power consumption, which have, is strict with and the field (such as consumer electronics product) to its precision without high request, above scheme
It is increasingly difficult to meet the needs of technology development.
Therefore, the magnetic of current environment how directly, is quickly obtained under the premise of not increasing sensor cost and power consumption
Field information is technical problem urgently to be solved.
Summary of the invention
In view of the problems of the existing technology, the present invention proposes a kind of Semiconductor magnetic field display and its operating method, leads to
It crosses magnetic sensitive transistor and converts electric signal for Magnetic Field, electrochromic cells receive electric signal and show magnetic by color change
Field information can directly, quickly obtain the magnetic of current environment by human eye without additionally increasing complicated interface circuit
Field information.
In order to achieve the above technical purposes, the one side embodiment of the present invention adopts the following technical scheme that
A kind of Semiconductor Magnetic Field Sensors, Semiconductor Magnetic Field Sensors include: magnetosensitive triode and electrochromic cells, magnetic
Quick triode includes emitter and collector, and emitter is connected with power supply line, and collector is adjacent with one end of first switch, and first
The other end of switch is connected with one end of the first electrode of electrochromic cells and second switch respectively, the other end of second switch
It is connected with one end of power supply, the other end of power supply is connected with ground wire respectively with the second electrode of electrochromic cells, three pole of magnetosensitive
Magnetic Field is converted electric signal by pipe, and electrochromic cells receive electric signal and show Magnetic Field by color change.
Further, electrochromic cells include the first electrode being successively set in substrate from bottom to top, ion storage
Layer, electrolyte layer, electrochromic layer, second electrode.
Further, electrochromic layer with a thickness of 50-500nm；The material of electrochromic layer is WO3、V2O5, it is NiO, poly-
Any one in aniline or polythiophene.
Further, first electrode is to electrode and second electrode is working electrode；Or first electrode be working electrode and
Second electrode is to electrode.
Further, first switch is opposite with the working condition of second switch.
In order to achieve the above technical purposes, the another aspect embodiment of the present invention also adopts the following technical scheme that
A kind of operating method of Semiconductor Magnetic Field Sensors passes through electroluminescent change using Semiconductor Magnetic Field Sensors as above
The color change of electrochromic layer shows Magnetic Field in color element, includes the following steps:
S11, reset phase are closed second switch while disconnecting first switch, electrochromism list under the action of power supply
The electrochromic layer of member reacts in the first preset time, and the color of electrochromic layer is reset to original state；
S12, display stage are closed first switch, after magnetic sensitive transistor receives Magnetic Field while disconnecting second switch
Cause the electric current between emitter and collector to change and export corresponding electric signal, electrochromic cells receive electric signal simultaneously
Electrochromic layer is set to react in the second preset time, the color of electrochromic layer changes from original state to display shape
State, the display status display current magnetic field information of electrochromic layer.
Further, step S11 further include: the first preset time of reset phase is complete not less than the color of electrochromic layer
The required time is returned to original state entirely.
Further, step S12 further include: show that second preset time in stage is tieed up not less than the color of electrochromic layer
Hold the time needed for display state.
Further, the first preset time and the second preset time are 1s-100s.
Compared to the prior art, the present invention has the following technical effect that
The invention proposes a kind of Semiconductor Magnetic Field Sensors and its operating method, which includes:
Magnetosensitive triode and electrochromic cells, magnetic sensitive transistor include emitter and collector, and emitter is connected with power supply line, current collection
Pole is adjacent with one end of first switch, the other end of first switch respectively with the first electrode of electrochromic cells and second switch
One end be connected, the other end of second switch is connected with one end of power supply, the second of the other end of power supply and electrochromic cells
Electrode is connected with ground wire respectively, and Magnetic Field is converted electric signal by magnetic sensitive transistor, and electrochromic cells receive electric signal simultaneously
Magnetic Field is shown by color change.Above-mentioned Semiconductor Magnetic Field Sensors convert electricity for Magnetic Field by magnetic sensitive transistor
Signal, electrochromic cells receive electric signal and show Magnetic Field by color change, without additionally increasing complexity
Interface circuit, the Magnetic Field of current environment can be directly quickly obtained by human eye, has that structure is simple, at low cost, body
The advantages that product is small, low in energy consumption, easy to operate, easy to use.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram for Semiconductor Magnetic Field Sensors that the embodiment of the present invention proposes；
Fig. 2 is that a kind of cross-section structure of the electrochromic cells for Semiconductor Magnetic Field Sensors that the embodiment of the present invention proposes shows
It is intended to；
Fig. 3 is a kind of flow chart of the operating method for Semiconductor Magnetic Field Sensors that the embodiment of the present invention proposes；
Fig. 4 is the flow chart of the operating method for another Semiconductor Magnetic Field Sensors that the embodiment of the present invention proposes；
Wherein: 1, magnetosensitive triode；11, emitter；12, collector；2, first switch；3, electrochromic cells；31,
One electrode；32, ion storage；33, electrolyte layer；34, electrochromic layer；35, second electrode；4, second switch；5, power supply.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
In addition, the terms "and/or", only a kind of incidence relation for describing affiliated partner, indicates may exist
Three kinds of relationships, for example, A and/or B, can indicate: individualism A exists simultaneously A and B, these three situations of individualism B.Separately
Outside, character "/" herein typicallys represent the relationship that forward-backward correlation object is a kind of "or".
As shown in Figure 1, the embodiment of the present invention proposes a kind of Semiconductor Magnetic Field Sensors comprising: magnetosensitive triode 1 with
Electrochromic cells 3, magnetic sensitive transistor 1 include emitter 11 and collector 12, and emitter 11 is connected with power supply line, collector 12
It is adjacent with one end of first switch 2, the other end of first switch 2 respectively with the first electrode 31 of electrochromic cells 3 and second
One end of switch 4 is connected, and the other end of second switch 4 is connected with one end of power supply 5, the other end and electrochromism list of power supply 5
The second electrode 35 of member 3 is connected with ground wire respectively, and Magnetic Field is converted electric signal, electrochromic cells 3 by magnetic sensitive transistor 1
It receives electric signal and Magnetic Field is shown by color change.
Wherein, magnetic sensitive transistor 1 includes emitter 11 and collector 12, and emitter 11 is connected with power supply line Vdd, collector
12 are connected with one end of first switch 2, and second switch 2 is connected by electrochromic cells 3 with ground wire GND, to realize aobvious
Show that the stage keeps magnetic sensitive transistor in the conductive state.Under the action of an external magnetic field, the collector current and base of magnetic sensitive transistor 1
Electrode current can change with the direction in magnetic field and the change of intensity, so export corresponding electric signal, thus realize by
Magnetic Field is converted to electric signal.
Preferably, magnetic sensitive transistor 1 is pnp type or npn type, is not specifically limited herein.
One end of first switch 2 is connected with collector 12, the other end respectively with the first electrode 31 of electrochromic cells 3 and
One end of second switch 4 is connected；The other end of second switch 4 is connected with one end of power supply 5.
On the contrary, i.e. when the former is is opened or closed, the latter is closure for first switch 2 and the working condition of second switch 4
Or it disconnects.Specifically, second switch 4 is closed when first switch 2 disconnects；Alternatively, second switch 4 is disconnected when first switch 2 is closed
It opens.
First switch 2 and second switch 4 are nonpolarity switch.
Electrochromic cells 3 receive electric signal and are generated and redox reaction occurs under the driving of the electric signal
Variation to spectral absorption energy band, and then change self color (such as from transparent to nontransparent, or from nontransparent to transparent), it is logical
Color change is crossed to show Magnetic Field.
Power supply 5 is constant voltage source or constant current source, makes electrochromism to provide constant voltage for electrochromic cells
Oxidation (or reduction) reaction occurs for layer, so that the color of electrochromic layer restPoses.
Above-mentioned Semiconductor Magnetic Field Sensors convert electric signal, electrochromic cells for Magnetic Field by magnetic sensitive transistor
It receives electric signal and Magnetic Field is shown by color change, without additionally increasing complicated interface circuit, pass through people
Eye can directly be quickly obtained the Magnetic Field of current environment, simple, at low cost, small in size, low in energy consumption with designing and preparing
The advantages that.
Preferably, as shown in Fig. 2, electrochromic cells 3 include that the first electrode 31 that sets gradually from bottom to top, ion are deposited
Reservoir 32, electrolyte layer 33, electrochromic layer 34, second electrode 35.Electrochromic cells 3 receive electric signal and by the electricity
Under the driving of signal occur redox reaction and generate the variation to spectral absorption energy band, and then change self color (such as from
Transparent to nontransparent, or from nontransparent to transparent), Magnetic Field is shown by color change.
Preferably, electrochromic layer 34 with a thickness of 50nm-500nm, if the thickness of electrochromic layer 34 is too thin, face
Color change is not significant, and naked eyes is caused to be difficult to distinguishing colours variation；If the thickness of electrochromic layer 34 is too thick, color change or
The overlong time of response, causing sensor of the invention to be difficult to includes in practice WO using the material of electrochromic layer 343、
V2O5, NiO, any one in polyaniline or polythiophene.
Preferably, first electrode 31 is to electrode and second electrode 35 is working electrode；Or first electrode 31 is work electricity
Pole and second electrode 35 are to electrode.
Preferably, second electrode 35 is transparent electrode, the side of eye-observation is positioned close to, in order to which human eye is direct
Quickly observe color change.Specific transparent electrode includes tin indium oxide (ITO), Al-Doped ZnO (AZO), fluorine doped oxidation
Any one in tin (FTO).
On the other hand, as shown in figure 3, the embodiment of the present invention proposes a kind of operating method of Semiconductor Magnetic Field Sensors,
Using any one Semiconductor Magnetic Field Sensors as described above, pass through the color of electrochromic layer 34 in electrochromic cells 3
Variation display Magnetic Field, specifically comprises the following steps:
S11, reset phase are closed second switch 4, electrochromism under the action of power supply 5 while disconnecting first switch 2
The electrochromic layer 34 of unit 3 reacts in the first preset time, and the color of electrochromic layer 34 is reset to original state；
Specifically, reduction (or oxidation) occurs for the electrochromic layer 34 in electrochromic cells 3 under the action of power supply 5
Reaction, and electrochromic layer 34 is caused to fade (or coloring), the color of electrochromic layer 34 is reset to original state.
S12, display stage, are closed first switch 2 while disconnecting second switch 4, magnetic sensitive transistor 1 receives Magnetic Field
Cause the electric current between emitter 11 and collector 12 to change afterwards and export corresponding electric signal, electrochromic cells 3 receive
Electric signal simultaneously makes electrochromic layer 34 react in the second preset time, and the color of electrochromic layer 34 is from initial state variable
Change to display state, the display status display current magnetic field information of electrochromic layer 34.
Specifically, under the action of an external magnetic field, the collector current and base current of magnetic sensitive transistor 1 can be with magnetic fields
Direction and intensity change and change, and then export corresponding electric signal, effect of the electrochromic cells 3 in electric signal
Lower generation oxidation (or reduction) reaction, and cause electrochromic layer 34 that coloring (or colour fading) occurs, so as to cause electrochromic layer
34 color change.Wherein the direction in magnetic field and intensity difference cause can magnetic sensitive transistor 1 collector current size not yet
Together, correspondingly, the degree of 34 color change of electrochromic layer is also different, therefore, can be indicated according to the color of electrochromic layer
The Magnetic Field of current environment.
The operating method of above-mentioned Semiconductor Magnetic Field Sensors converts electric signal for Magnetic Field by magnetic sensitive transistor,
Electrochromic cells receive electric signal and show Magnetic Field by color change, without additionally increasing complicated interface
Circuit can directly be quickly obtained the Magnetic Field of current environment by human eye, have and design and prepare simple, at low cost, body
The advantages that product is small, low in energy consumption.
Preferably, as shown in figure 4, on the basis of the above embodiments, semiconductor in another embodiment proposed by the present invention
The operating method of magnetic field sensor, includes the following steps:
S21, reset phase are closed second switch 4, electrochromism under the action of power supply 5 while disconnecting first switch 2
The electrochromic layer 34 of unit 3 reacts in the first preset time, and the color of electrochromic layer 34 is reset to original state,
Time needed for first preset time is completely recovered to original state not less than the color of electrochromic layer 34；
Specifically, the stage duration is completely recovered to needed for original state not less than the color of electrochromic layer 34
Time.The first preset time specific time depends on material and structure used in electrochromic cells.For example, for identical
Electrochromism layer material, the thickness of electrochromic layer is thinner, then color change is faster, and corresponding first preset time is also got over
It is short；For the electrochromic layer of same thickness, organic electrochromic layers material (such as polyaniline) is usually than inorganic electrochromic layer
Material (such as WO3) color change it is fast, corresponding first preset time is also shorter.
Preferably, the first preset time is 1s-100s.For WO3、V2O5, NiO, polyaniline, the electrochromism such as polythiophene
Layer material, when its thickness is in 50nm -500nm, the typical color change time is 1s-100s.It both can guarantee electrochromism in this way
The color change naked eyes of layer can be differentiated, and to meet practical application request in zone of reasonableness the time required to color change.
S22, display stage, are closed first switch 2 while disconnecting second switch 4, magnetic sensitive transistor 1 receives Magnetic Field
Cause the electric current between emitter 11 and collector 12 to change afterwards and export corresponding electric signal, electrochromic cells 3 receive
Electric signal simultaneously makes electrochromic layer 34 react in the second preset time, and the color of electrochromic layer 34 is from initial state variable
Change to display state, the display status display current magnetic field information of electrochromic layer 34, the second preset time is not less than electroluminescent change
Time needed for the color of chromatograph 34 maintains display state.
Specifically, the stage duration should react the time needed for reaching saturation not less than electrochromic layer 34, with
Ensure that the color of electrochromic layer 34 no longer changes under specific magnetic fields effect.The second preset time specific time depends on
Material and structure used in electrochromic cells.For example, for identical electrochromism layer material, the thickness of electrochromic layer
Thinner, then color change is faster, and corresponding second preset time is also shorter；For the electrochromic layer of same thickness, Organic Electricity
Mutagens colour layer material (such as polyaniline) is usually than inorganic electrochromic layer material (such as WO3) color change it is fast, corresponding second
Preset time is also shorter.
Preferably, the reasons why the second preset time is 1s-100s, is arranged in this way are as follows: for WO3、V2O5, NiO, polyaniline,
The electrochromism layer material such as polythiophene, when its thickness is in 50nm -500nm, the typical color change time is 1s-100s.In this way
Not only it can guarantee that the color change naked eyes of electrochromic layer can be differentiated, but also made in zone of reasonableness the time required to color change, it is full
Sufficient practical application request.
To sum up, the invention proposes a kind of Semiconductor Magnetic Field Sensors and its operating method, the Semiconductor Magnetic Field Sensors
It include: magnetosensitive triode and electrochromic cells, magnetic sensitive transistor includes emitter and collector, emitter and power supply line phase
Even, collector is adjacent with one end of first switch, the other end of first switch respectively with the first electrode of electrochromic cells and
One end of second switch is connected, and the other end of second switch is connected with one end of power supply, the other end and electrochromism list of power supply
The second electrode of member is connected with ground wire respectively, and Magnetic Field is converted electric signal by magnetic sensitive transistor, and electrochromic cells receive
Electric signal simultaneously shows Magnetic Field by color change.Above-mentioned Semiconductor magnetic field display is believed magnetic field by magnetic sensitive transistor
Breath is converted into electric signal, and electrochromic cells receive electric signal and show Magnetic Field by color change, without volume
It is outer to increase complicated interface circuit, the Magnetic Field of current environment can be directly quickly obtained by human eye, simple with structure,
The advantages that at low cost, small in size, low in energy consumption, easy to operate, easy to use.
Through the above description of the embodiments, it is apparent to those skilled in the art that, for description
It is convenienct and succinct, only with the division progress of above-mentioned each functional unit for example, in practical application, can according to need and will be upper
It states function distribution to be completed by different functional units, i.e., the internal structure of device is divided into different functional units, to complete
All or part of function described above.The specific work process of the system, apparatus, and unit of foregoing description, before can referring to
The corresponding process in embodiment of the method is stated, details are not described herein.
More than, only a specific embodiment of the invention, but scope of protection of the present invention is not limited thereto, and it is any to be familiar with
Those skilled in the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all cover
Within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (9)
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Cited By (1)
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|---|---|---|---|---|
| CN110320481A (en) * | 2019-07-11 | 2019-10-11 | 南京理工大学 | It is a kind of based on magnetoelectricity-electrochromic effect magnetic field visualization sensor |
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Application publication date: 20190129 |