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CN109247003A - 电磁屏蔽膜及其制作方法 - Google Patents

电磁屏蔽膜及其制作方法 Download PDF

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CN109247003A
CN109247003A CN201810326497.4A CN201810326497A CN109247003A CN 109247003 A CN109247003 A CN 109247003A CN 201810326497 A CN201810326497 A CN 201810326497A CN 109247003 A CN109247003 A CN 109247003A
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electromagnetic shielding
shielding film
layer
silver
metal
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沈芾云
何明展
徐筱婷
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Avary Holding Shenzhen Co Ltd
Qing Ding Precision Electronics Huaian Co Ltd
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Avary Holding Shenzhen Co Ltd
Qing Ding Precision Electronics Huaian Co Ltd
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Priority to CN201810326497.4A priority Critical patent/CN109247003A/zh
Priority to US16/021,308 priority patent/US11297748B2/en
Priority to TW107122412A priority patent/TWI698170B/zh
Publication of CN109247003A publication Critical patent/CN109247003A/zh
Priority to US17/684,560 priority patent/US20220312655A1/en
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Abstract

本发明涉及一种电磁屏蔽膜，其包括一绝缘层、一金属层以及一导电胶层。所述绝缘层由聚酰亚胺制作而成。所述金属层形成于所述绝缘层一表面。所述金属层的化学成分为银。所述导电胶层涂覆于所述金属层表面的。本发明涉及一种所述电磁屏蔽膜的制作方法。

Description

电磁屏蔽膜及其制作方法
技术领域
本发明涉及屏蔽材料技术领域，尤其涉及一种电磁屏蔽膜及其制作方法。
背景技术
电磁屏蔽性是指能够屏蔽掉外部干扰电磁信号，使电子元件不受其它设备的影响或干扰，是产品质量的重要指标之一。随着人们对网络通讯速度要求的不断提高，智能手机等便携式终端设备对超高频(1Ghz～50Ghz)信号的屏蔽要求越来越高，其屏蔽性通常借助于电子设备中设置的电磁屏蔽膜来实现。通常，电磁屏蔽膜包括金属层、胶层及保护层。保护层采用热塑性聚氨酯制作。
随着电子元件朝小型化，功能多样化的发展，柔性电路板的面积层数不断缩小，层数不断增加，市场上有对电磁屏蔽膜在高段差环境中应用的需求。然而，在高段差叠构(大于50微米)的柔性电路板中，一般电磁屏蔽膜会有破裂或产生气泡的情况发生。
发明内容
因此，有必要提供一种制作过程简单并且成型时无毛刺残铜产生的电路板制作方法及电路板。
一种电磁屏蔽膜，包括：
一绝缘层，所述绝缘层由聚酰亚胺制作而成；
形成于所述绝缘层一表面的金属层，所述金属层的化学成分为银；
涂覆于所述金属层表面的导电胶层。
一种电磁屏蔽膜的制作方法，包括以下步骤：
在所述绝缘层表面进行化银处理，形成金属层，
在所述金属层表面涂导电胶，形成导电胶层。
本技术方案提供的电磁屏蔽膜，通过在所述绝缘层(聚酰亚胺)上金属化银，然后涂覆导电胶的制作完成。所述电磁屏蔽膜将绝缘层作为外层保护层，具有较好的剥离强度、柔软性及较低的反弹力，保证其在具有高断差的产品元件中应用不致破裂或产生气泡。
附图说明
图1是本技术方案实施例提供的绝缘层的剖面示意图。
图2是图1的绝缘层金属化处理(化银)后的剖面示意图。
图3是图2金属层上形成导电胶层后的俯视图。
图4是图3中的电磁屏蔽膜压覆在含有高度断差的电路板后的剖面示意图。
主要元件符号说明
绝缘层 10
上表面 12
下表面 14
金属层 20
导电胶层 30
电磁屏蔽膜 100
电路板 200
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合附图及实施例对本技术方案提供的电磁屏蔽膜及其制作方法作进一步的详细说明。
本技术方案实施例提供的电磁屏蔽膜100的制作方法包括以下步骤：
第一步，请参阅图1，提供一绝缘层10。
所述绝缘层10包括一上表面12以及一下表面14。所述上表面12与所述下表面14相背设置。所述绝缘层10的厚度范围为5～35微米。本实施方式中，所述绝缘层10由聚酰亚胺(PI)制作而成。
第二步，请一并参阅图2，对所述绝缘层10进行金属化处理得到金属层20。所述金属层20的厚度范围为0.1～0.5微米。本实施方式中，所述金属层为银层。所述金属化处理采用化银的方式。
具体地，先对所述上表面12进行表面处理，形成符合金属化的表面结构。所述表面处理包含物理氧化、化学氧化、化学接枝、电接枝、光化学接枝以及硅烷化修改中的一种或任意几种的组合。所述金属化处理可以为静电吸附或化学镀中的任意一种方式。
当采用静电吸附的方式时，添加的反应物为银纳米晶(AgNPs)，催化剂的主要成分为纳米银单质。所述上表面12通过电荷改质的方式吸附AgNPs，形成金属层20。
当采用离子反应的方式时，添加的反应物为银离子，催化剂的主要成分为AgNO3、Ag(NH3)2NO3、AgClO4、AgOAc，所述上表面12通过电荷改质的方式吸附银离子，然后通过一系列还原反应在所述上表面12上形成金属层20。
在其它实施方式中，当采用离子反应的方式时，添加的反应物为银离子及铜离子，催化剂的主要成分为AgNO3、CuCl2，所述上表面12通过电荷改质的方式吸附银离子及铜离子，然后通过一系列还原反应在所述上表面12上形成铜银合金，从而形成金属层20。
在其他实施方式中，可继续在所述金属层20上进行化铜处理以在所述金属层20上形成金属加厚层(图未示)。
第三步，请参阅图3，形成所述金属层20后，在所述金属层20表面涂布导电胶，形成导电胶层30，从而形成电磁屏蔽膜100。
所述导电胶层30的厚度范围为8～40微米。本实施方式中，所述导电胶层30包括质量百分比为26％～26.6％的双酚A二缩水甘油醚、质量百分比为11.97％～12.23％的双酚S二缩水甘油醚、质量百分比为5.87％～6.13％的双酚F二缩水甘油醚、质量百分比为2.2％～2.8％的聚酰胺、质量百分比为27.4％～57.4％的银包铜粉以及质量百分比为0～16％的银片。
其中，所述双酚A二缩水甘油醚用于增加所述导电胶层30的强韧性、柔软性及耐化性。所述双酚S二缩水甘油醚用于增加所述导电胶层30的连接性及耐热性。所述双酚F二缩水甘油醚作为双官能团稀释剂。所述聚酰胺用作固化剂。在其它实施方式中，也可选择双氰胺作为固化剂。所述银包铜粉及所述银片均起到导电的作用，两者含量越高所述导电胶层30的电阻率越低。但是过量的粉体会造成述导电胶层30配方的分散性不加，印刷操作性差，所以银包铜粉含量保持在57.4～27.4％、银片含量在0～16％为最佳范围。
下表为所述导电胶层30的三种配方。
将上述双酚A二缩水甘油醚、双酚S二缩水甘油醚、双酚F二缩水甘油醚、聚酰胺、银包铜粉以及银片混合，溶解在溶剂中，形成所述导电胶层30。
在满足各成分比例范围的情况下，所述配方的参数重量可作调整，并不以此为限。
请参阅图3，所述电磁屏蔽膜100包括所述绝缘层10、所述金属层20以及所述导电胶层30。所述绝缘层10由聚酰亚胺制作而成。所述金属层20形成于所述绝缘层10的表面。所述金属层20的化学成分为银。所述导电胶层30涂覆于所述金属层20的表面。所述电磁屏蔽膜100厚度维持在13～75微米之间。所述电磁屏蔽膜100的横向抗拉强度大于160Mpa，纵向抗拉强度大于130Mpa。所述电磁屏蔽膜100的横向及纵向延伸率均在60～120％之间。所述电磁屏蔽膜100的剥离强度大于0.6Kg/cm。所述电磁屏蔽膜100的可绕折弯曲次数在10000次以上。
请参阅图4，所述电磁屏蔽膜100应用于具有高断差的电路板200上。所述电路板200具有一高度断差，其直径e大于0.8毫米，高度落差d的范围在0～100微米之间。优选地，所述高度落差d的范围在50～100微米之间。即，所述电磁屏蔽膜100更适合应用在具有50～100微米的高度落差范围的电路板上。所述电磁屏蔽膜100贴覆在所述电路板200上并覆盖该高度断差。此时所述导电胶层30贴覆在所述电路板200表面，所述绝缘层10背离所述电路板200。所述电磁屏蔽膜100贴覆在所述电路板200后，所述绝缘层的厚度维持在5～35微米之间，所述金属层的厚度维持在0.1～0.5微米之间，所述导电胶层的厚度维持在8～40微米之间。
本技术方案提供的电磁屏蔽膜100，通过在所述绝缘层10(聚酰亚胺)上金属化银并化铜，然后涂覆导电胶的制作完成。所述电磁屏蔽膜100将绝缘层10作为外层保护层，具有较好的剥离强度、柔软性及较低的反弹力，保证其在具有高断差的产品元件中应用不致破裂或产生气泡。此外，由于PI的延伸率在70～90％之间，降低了所述电磁屏蔽膜100的冲型难度。而PI的高抗撕强度，使其在撕离型纸过程中不易破损。再者，PI具有较低的吸水率(0.3～0.4％)。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种电磁屏蔽膜，其特征在于，包括：
一绝缘层，所述绝缘层由聚酰亚胺制作而成；
形成于所述绝缘层一表面的金属层，所述金属层的化学成分为银；
涂覆于所述金属层表面的导电胶层。
2.如权利要求1所述的电磁屏蔽膜，其特征在于，所述电磁屏蔽膜还包括金属加厚层，所述金属加厚层的化学成分为铜。
3.如权利要求1所述的电磁屏蔽膜，其特征在于，所述导电胶层包括质量百分比在26％～26.6％之间的双酚A二缩水甘油醚、质量百分比在11.97％～12.23％之间的双酚S二缩水甘油醚、质量百分比在5.87％～6.13％之间的双酚F二缩水甘油醚、质量百分比在2.2％～2.8％之间的聚酰胺、质量百分比在27.4％～57.4％之间的银包铜粉以及0～16％的银片。
4.如权利要求1所述的电磁屏蔽膜，其特征在于，所述电磁屏蔽膜的整体厚度范围为13～75微米，所述绝缘层的厚度范围为5～35微米，所述金属层的厚度范围为0.1～0.5微米，所述导电胶层的厚度范围为8～40微米。
5.如权利要求1所述的电磁屏蔽膜，其特征在于，所述金属层通过电镀、化学镀或者静电吸附中的任何一种方式形成于所述绝缘层上。
6.一种权利要求1～5中任一项所述的电磁屏蔽膜的制作方法，其特征在于，包括以下步骤：
在所述绝缘层表面进行化银处理，形成金属层，
在所述金属层表面涂导电胶，形成导电胶层。
7.如权利要求6所述的电磁屏蔽膜的制作方法，其特征在于，在形成所述金属层步骤之后，形成所述导电胶层之前，所述电磁屏蔽膜的制作方法包括以下步骤：在所述金属层表面进行化铜处理，形成金属加厚层。
8.如权利要求6所述的电磁屏蔽膜的制作方法，其特征在于，所述化银处理的反应剂为银纳米晶，催化剂主剂为纳米银。
9.如权利要求6所述的电磁屏蔽膜的制作方法，其特征在于，所述化银处理的反应剂为银离子，催化剂主剂为AgNO3、Ag(NH3)2NO3、AgClO4、AgOAc。
10.如权利要求6所述的电磁屏蔽膜的制作方法，其特征在于，所述导电胶层包括质量百分比在26％～26.6％之间的双酚A二缩水甘油醚、质量百分比在11.97％～12.23％之间的双酚S二缩水甘油醚、质量百分比在5.87％～6.13％之间的双酚F二缩水甘油醚、质量百分比在2.2％～2.8％之间的聚酰胺、质量百分比在27.4％～57.4％之间的银包铜粉以及0～16％的银片。
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Application publication date: 20190118