CN109233837A - The novel oxalic acid system ITO etching solution of Display panel array process - Google Patents
The novel oxalic acid system ITO etching solution of Display panel array process Download PDFInfo
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- CN109233837A CN109233837A CN201811269095.1A CN201811269095A CN109233837A CN 109233837 A CN109233837 A CN 109233837A CN 201811269095 A CN201811269095 A CN 201811269095A CN 109233837 A CN109233837 A CN 109233837A
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- CN
- China
- Prior art keywords
- oxalic acid
- etching solution
- display panel
- array process
- panel array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 title claims abstract description 115
- 238000005530 etching Methods 0.000 title claims abstract description 43
- 235000006408 oxalic acid Nutrition 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000004094 surface-active agent Substances 0.000 claims abstract description 21
- 230000000694 effects Effects 0.000 claims abstract description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 18
- 239000012498 ultrapure water Substances 0.000 claims description 18
- 238000003756 stirring Methods 0.000 claims description 15
- -1 polyoxy Polymers 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 5
- 239000002736 nonionic surfactant Substances 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 4
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 4
- 229920000570 polyether Polymers 0.000 claims description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 239000006260 foam Substances 0.000 abstract description 10
- 239000003643 water by type Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000003009 phosphonic acids Chemical class 0.000 description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NSTREUWFTAOOKS-UHFFFAOYSA-N 2-fluorobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1F NSTREUWFTAOOKS-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000001935 peptisation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The present invention relates to the novel oxalic acid system ITO etching solution of Display panel array process, calculated in weight percent, the surfactant of oxalic acid, 5ppm-900ppm including 3.2-3.6% and the ultrapure waters of surplus.The present invention selects novel surfactant, which reduces surface tension to reach the control to crystallite；Simultaneously without other any negative effects, the control of micro details is also more excellent；Exist simultaneously without stable foam, the complete self-defoaming of 3-10s eliminates influence of the foam to etching, improves product yield.
Description
Technical field
The present invention relates to a kind of chemical etching liquor technical field of metal oxide materials, in particular to a kind of panel is aobvious
Show array process with novel oxalic acid system ITO etching solution.
Background technique
ITO electro-conductive glass is to utilize sputtering, evaporation etc. on the basis of sodium calcium base or silicon boryl, aluminium silicon-based substrates glass
A variety of methods plate indium oxide layer tin (being commonly called as ITO) film and manufacture, ITO conductive film be widely used for Display panel,
Photoelectron and various optical fields generally use etching solution and come out conductive circuit etching.
The patent that open (bulletin) number is CN104388090A: a kind of oxalic acid system ITO etching solution and preparation method thereof with answer
A kind of oxalic acid system ITO etching solution, by weight percentage, the alkane of oxalic acid, 0.1-0.5% comprising 0.5-10% are disclosed in
Base phenol polyethenoxy ether series of surfactants, the organic multicomponent phosphonic acids of 0.1-5% and the water of surplus, the preparation method is as follows: often
Under normal temperature and pressure, deionized water is added in material-compound tank；Under stirring, oxalic acid, the alkyl phenol polyoxyethylene ether series of formula ratio is added
Surfactant and organic multicomponent phosphonic acids；Stirring is filtered, discharging to being completely dissolved uniformly；Using raw material disclosed in the patent
And the etching solution of technique production, since the addition of surfactant generates a large amount of foams, it is good to influence product in etching process
Rate, the presence of foam hinder contact of the substrate with etching solution, cause to etch low precision, have in microstructure it is more apparent micro-
The defects of brilliant particulate matter exists, and etching face is coarse.
Open (bulletin) number for CN102382657A patent: a kind of etching liquid for transparent conducting film and preparation method thereof public affairs
The etching solution being mixed to get by oxalic acid, o-fluorobenzoic acid (abbreviation OFBA), alkyl phenol polyoxyethylene ether, defoaming agent and water has been opened,
The etching solution system reduces the generation of foam, but foam is still extremely obvious, without thoroughly solving foam to the negative shadow of etching
It rings；Requirement of the current product to etching precision is very high, and there are still certain defects in the etching solution use；Want to improve such lack
It falls into, to select novel surfactant, the generation of foam can be eliminated and reduce surface tension, improve the precision of etching.
Summary of the invention
In order to overcome the drawbacks of the prior art, the present invention provides a kind of Display panel array process novel oxalic acid system ITO
Etching solution.
To achieve the goals above, the present invention the following technical schemes are provided:
The novel oxalic acid system ITO etching solution of Display panel array process, it is calculated in weight percent, including 3.2-3.6%
Oxalic acid, the surfactant of 5ppm-900ppm and the ultrapure water of surplus.
Preferably, the weight percent of the oxalic acid is 3.3-3.5%.
Preferably, the surfactant selects isomery alcohol ether series of surfactants, atactic polyether series surface-active
The polyoxyethylene non-ionic surfactant of agent or modified form.
Preferably, the mode of ameliorating of the polyoxyethylene non-ionic surfactant of the modified form is to use short chain alkanes
CH3-C4H9Activity dose of terminal hydroxyl of table is replaced, reduces its foaming capacity while keeping surface-active！
Preferably, the ultrapure water uses 15M Ω cm ultrapure water, and the oxalic acid selects the oxalic acid of 99.5% or more purity
Powder.
Preferably, the preferred 18M Ω cm ultrapure water of the ultrapure water.
The novel oxalic acid system ITO etching solution of Display panel array process, comprising the following steps: under normal temperature and pressure, pass through matter
It measures flowmeter ultrapure water is added in solid dissolution stirred tank；Stirring is opened, formula ratio is added in mixing speed 30-120rpm
Oxalic acid and surfactant, stirring to be completely dissolved uniformly；Filtering, is then filled in specified packing container.
Preferably, filtering preferably uses the double-filtration of aperture 0.5um and 0.2um.
The purposes of the novel oxalic acid system ITO etching solution of Display panel array process, the etching solution are applied to Display panel
Upper ITO array process moment, technique for applying use transfer matic spray model, and temperature is controlled at 35-45 DEG C.
Beneficial effect of the invention is that the present invention uses novel surfactant, which is reduced
Surface tension is to reach the control to crystallite；Simultaneously without other any negative effects, the control of micro details is also more excellent；Erosion
Foamless generation during quarter improves product yield；The production technology mentioned in comparison background technique, formula is simpler,
Technique is more simple and easy to control, can substitute existing formula well.
Detailed description of the invention
Fig. 1 is the observation figure of control group micro-crystallization.
Fig. 2 is the observation figure of one micro-crystallization of embodiment.
Fig. 3 is control group microstructure photoresist dissolution observation figure.
Fig. 4 is one microstructure photoresist of embodiment dissolution observation figure.
Specific embodiment
The preferred embodiments of the present invention will be described in detail below so that advantages and features of the invention can be easier to by
It will be appreciated by those skilled in the art that so as to make a clearer definition of the protection scope of the present invention.
Embodiment one:
Each raw material proportioning are as follows:
3.4% oxalic acid, 100ppm isomery alcohol ether series of surfactants (such as ten alcohol ether XL-70 of isomery) and surplus 18M
Ω cm ultrapure water.
Specific preparation method:
Under normal temperature and pressure, ultrapure water is added by solid by mass flowmenter and is dissolved in stirred tank；Open stirring, stirring speed
Degree is 60rpm, and the oxalic acid and surfactant of formula ratio is added, and stirring is uniform to being completely dissolved；Use aperture for 0.5um and
The filter of 0.2um is filtered, and is then filled in specified packing container.
Embodiment two:
Each raw material proportioning are as follows:
3.2% oxalic acid, 100ppm atactic polyether series of surfactants (such as butanol atactic polyether BPE1500) and surplus
18M Ω cm ultrapure water.
Specific preparation method:
Under normal temperature and pressure, ultrapure water is added by solid by mass flowmenter and is dissolved in stirred tank；Open stirring, stirring speed
Degree is 100rpm, and the oxalic acid and surfactant of formula ratio is added, and stirring is uniform to being completely dissolved；Use aperture for 0.5um and
The filter of 0.2um is filtered, and is then filled in specified packing container.
Embodiment three:
Each raw material proportioning are as follows:
Polyoxyethylene non-ionic surfactant (such as modified isomery alcohol ether of 3.6% oxalic acid, 500ppm modified form
) and surplus 18M Ω cm ultrapure water HNF3-8.
Specific preparation method:
Under normal temperature and pressure, ultrapure water is added by solid by mass flowmenter and is dissolved in stirred tank；Open stirring, stirring speed
Degree is 40rpm, and the oxalic acid and surfactant of formula ratio is added, and stirring is uniform to being completely dissolved；Use aperture for 0.5um and
The filter of 0.2um is filtered, and is then filled in specified packing container.
Test method:
1) foam measures: 50ml etching solution being imported in 100ml tool plug graduated cylinder, turned upside down 20 times, stands 5s observation bubble
Foam situation；
2) micro-crystallization: using the microcrystal grain object in the microstructure after SEM (scanning electron microscope) observation etching；
3) to the influence of photoresist: using the photoetching in the microstructure after SEM (scanning electron microscope) observation etching
The phenomenon that peptization solution.
It being compared using the etching solution that embodiment one~tri- configures with existing etching solution, existing etching solution is control group,
It is respectively acting on the two on identical sample, and is tested under same testing conditions, experimental result is as shown in table 1:
1 control experiment results of table (control group is existing etching solution experimental group).
By above-mentioned experimental data combination attached drawing 1-4 it is found that the present invention has been obviously improved frothing, the control to micro details
It makes also more excellent.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those skilled in the art within the technical scope disclosed by the invention, can without the variation that creative work is expected or
Replacement, should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be limited with claims
Subject to fixed protection scope.
Claims (9)
1. the novel oxalic acid system ITO etching solution of Display panel array process, which is characterized in that it is calculated in weight percent, including
The ultrapure water of the oxalic acid of 3.2-3.6%, the surfactant of 5ppm-900ppm and surplus.
2. the novel oxalic acid system ITO etching solution of Display panel array process according to claim 1, which is characterized in that institute
The weight percent for stating oxalic acid is 3.3-3.5%.
3. the novel oxalic acid system ITO etching solution of Display panel array process according to claim 1, which is characterized in that institute
State the polyoxy second that surfactant selects isomery alcohol ether series of surfactants, atactic polyether series of surfactants or modified form
Ene-type nonionic surfactant.
4. the novel oxalic acid system ITO etching solution of Display panel array process according to claim 3, which is characterized in that institute
The mode of ameliorating for stating the polyoxyethylene non-ionic surfactant of modified form is with short chain alkanes CH3-C4H9By activity dose of table
Terminal hydroxyl sealing end.
5. the novel oxalic acid system ITO etching solution of Display panel array process according to claim 1, which is characterized in that institute
Ultrapure water is stated using 15-18.2M Ω cm ultrapure water, the oxalic acid selects the oxalic acid powder of 99.5% or more purity.
6. the novel oxalic acid system ITO etching solution of Display panel array process according to claim 1, which is characterized in that institute
Stating ultrapure water is >=18M Ω cm ultrapure water.
7. the novel oxalic acid system ITO etching solution of Display panel array process, which comprises the following steps: normal temperature and pressure
Under, ultrapure water is added by solid by mass flowmenter and is dissolved in stirred tank；Stirring is opened, mixing speed 30-120rpm adds
Enter the oxalic acid and surfactant of formula ratio, stirring is uniform to being completely dissolved；Filtering, is then filled to specified packing container
In.
8. the novel oxalic acid system ITO etching solution of Display panel array process according to claim 6, which is characterized in that mistake
Filter preferably uses the double-filtration of aperture 0.5um and 0.2um.
9. the Display panel array process purposes of novel oxalic acid system ITO etching solution, which is characterized in that the etching solution is applied to
The etching of ITO array process on Display panel, technique for applying use transfer matic spray model, and temperature is controlled at 35-45 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811269095.1A CN109233837A (en) | 2018-10-29 | 2018-10-29 | The novel oxalic acid system ITO etching solution of Display panel array process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811269095.1A CN109233837A (en) | 2018-10-29 | 2018-10-29 | The novel oxalic acid system ITO etching solution of Display panel array process |
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| Publication Number | Publication Date |
|---|---|
| CN109233837A true CN109233837A (en) | 2019-01-18 |
Family
ID=65079019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811269095.1A Pending CN109233837A (en) | 2018-10-29 | 2018-10-29 | The novel oxalic acid system ITO etching solution of Display panel array process |
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| Country | Link |
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| CN (1) | CN109233837A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113801660A (en) * | 2021-08-10 | 2021-12-17 | 福建钰融科技有限公司 | Indium tin oxide etching solution with long etching life |
| CN114507527A (en) * | 2021-12-13 | 2022-05-17 | 福建中安高新材料研究院有限公司 | ITO etching solution and preparation method and application method thereof |
| CN114790392A (en) * | 2022-04-25 | 2022-07-26 | 苏州博洋化学股份有限公司 | Oxalic acid ITO etching solution without damage to photoresist |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101517712A (en) * | 2006-09-13 | 2009-08-26 | 长瀬化成株式会社 | Etching solution composition |
| CN102732253A (en) * | 2012-06-30 | 2012-10-17 | 江阴润玛电子材料股份有限公司 | Ferric trichloride ITO etching solution and its preparation method |
| CN104388090A (en) * | 2014-10-21 | 2015-03-04 | 深圳新宙邦科技股份有限公司 | Oxalic acid-series ITO (Indium Tin Oxide) etching liquid, as well as preparation method and application thereof |
| CN105176533A (en) * | 2015-09-25 | 2015-12-23 | 江阴润玛电子材料股份有限公司 | ITO-Ag-ITO etching liquid for AM-OLED display screen and preparation method |
-
2018
- 2018-10-29 CN CN201811269095.1A patent/CN109233837A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101517712A (en) * | 2006-09-13 | 2009-08-26 | 长瀬化成株式会社 | Etching solution composition |
| JP4674704B2 (en) * | 2006-09-13 | 2011-04-20 | ナガセケムテックス株式会社 | Etching solution composition |
| CN102732253A (en) * | 2012-06-30 | 2012-10-17 | 江阴润玛电子材料股份有限公司 | Ferric trichloride ITO etching solution and its preparation method |
| CN104388090A (en) * | 2014-10-21 | 2015-03-04 | 深圳新宙邦科技股份有限公司 | Oxalic acid-series ITO (Indium Tin Oxide) etching liquid, as well as preparation method and application thereof |
| CN105176533A (en) * | 2015-09-25 | 2015-12-23 | 江阴润玛电子材料股份有限公司 | ITO-Ag-ITO etching liquid for AM-OLED display screen and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| 董晓红等: "《封端聚醚的应用研究进展》", 《精细与专用化学品》 * |
| 马超: "《羟端基聚醚封端技术及应用》", 《价值工程》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113801660A (en) * | 2021-08-10 | 2021-12-17 | 福建钰融科技有限公司 | Indium tin oxide etching solution with long etching life |
| CN114507527A (en) * | 2021-12-13 | 2022-05-17 | 福建中安高新材料研究院有限公司 | ITO etching solution and preparation method and application method thereof |
| CN114790392A (en) * | 2022-04-25 | 2022-07-26 | 苏州博洋化学股份有限公司 | Oxalic acid ITO etching solution without damage to photoresist |
| CN114790392B (en) * | 2022-04-25 | 2023-12-15 | 苏州博洋化学股份有限公司 | Oxalic acid ITO etching solution without damage to photoresist |
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Application publication date: 20190118 |