CN109233440A - A kind of buffer layer ink preparing organic semiconductor device for solwution method - Google Patents
A kind of buffer layer ink preparing organic semiconductor device for solwution method Download PDFInfo
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- CN109233440A CN109233440A CN201710306069.0A CN201710306069A CN109233440A CN 109233440 A CN109233440 A CN 109233440A CN 201710306069 A CN201710306069 A CN 201710306069A CN 109233440 A CN109233440 A CN 109233440A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000003292 glue Substances 0.000 claims abstract description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 239000000654 additive Substances 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- 229960000583 acetic acid Drugs 0.000 claims description 6
- 238000002604 ultrasonography Methods 0.000 claims description 6
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- 239000012362 glacial acetic acid Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 229940013688 formic acid Drugs 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000004132 cross linking Methods 0.000 abstract description 9
- 239000003431 cross linking reagent Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 abstract description 2
- 230000003204 osmotic effect Effects 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 description 35
- 239000000243 solution Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229940093915 gynecological organic acid Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/102—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/36—Inkjet printing inks based on non-aqueous solvents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/38—Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/204—Applications use in electrical or conductive gadgets use in solar cells
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2312/00—Crosslinking
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
Abstract
A kind of buffer layer ink preparing organic semiconductor device for solwution method, wherein conductive materials use PFN, and crosslinking agent uses 150AB glue, has the characteristics that cross-linking effect stops well osmotic effect good.
Description
Technical field
The present invention relates to a kind of inkjet printing consumptive materials, specifically a kind of to prepare organic semiconductor device for solwution method
Buffer layer ink.
Background technique
In recent years, organic semiconductor device the relevant technologies are developed rapidly, and new material new process emerges one after another.Common
Organic semiconductor device includes organic photovoltaic battery, Organic Light Emitting Diode, organic field effect tube etc..Organic semiconductor device
Part generally has multilayered structure, by taking organic electroluminescence device as an example, in addition to electrode layer, also typically include hole injection layer,
Hole transmission layer, luminescent layer, electron injecting layer, electron transfer layer etc..It is usually logical that this multilayered structure is prepared in current industrial
Cross what the mode of vacuum evaporation was realized, this method technology maturation, easily controllable film thickness, but it is at high cost, consumptive material is big, operation
Condition is harsh.Since current many materials for preparing layer, especially organic material can be prepared into solution, solution may be implemented low
The operation such as be coated under temperature, this mode compared with traditional evaporation coating method, have quickly, energy conservation, stock utilization height etc.
Therefore advantage carries out including silk-screen printing by solwution method, inkjet deposited, and the modes such as knife coating implement organic semiconductor device
The serialization large-scale production of part is one of current main improvement direction.
Solwution method prepares the main problem that multilayer device faces, and can still be dissolved in after functional material film forming
Solvent, this will lead to a tunic on when preparing next tunic and can be partly solubilized or be completely dissolved, or interpenetrate,
The multilayer device performance that thus cannot achieve the preparation of multilayer device or prepare becomes very poor.Cross-linking method (cross
It linking) is one of the common approach for solving the problems, such as this at present.Crosslinking refers to film surface or entirety under certain condition
It crosslinks, forms the process of net high-polymer material, after film crosslinks, be just no longer dissolve in orthogonal to that molten
Agent, to solve the problems, such as interpenetrating between multilayer film.
Buffer layer refer to directly in device in one layer with charge transfer function between electrode layer and active layer
Or it is several layers of, the buffer layer of self-crosslinkable generally includes crosslinking agent and charge transport materials.Although can theoretically be dissolved in commonly use it is molten
Agent and the big multiselect of film realizing that the substance of crosslinked action all can serve as crosslinking agent, but being prepared in reality with solution methods
With metal oxide and this kind of material of sulfide be limited in the application charge transport properties requirement, cannot achieve prepare it is subsequent molten
Liquid (ink) electrode, in addition, this kind of solution has generally required high-temperature process in use, or even is also accompanied by malicious production
Object.And the another kind of polymer material studied extensively now does not often have preferable crosslinking feature, can not stop molten
The infiltration of liquid (ink) electrode, has little effect.
Therefore, the combined type for finding suitable charge transport materials and crosslinking agent prepares the key of cross-linking buffer layer.Closely
Nian Lai, it has been reported that, during material engineering institute of South China Science & Engineering University is when solwution method prepares OLED element, use
PFNR2 and ELC2500 type epoxy resin is mixed with cross-linking buffer layer, relative to non-crosslinkable buffer layer, has obvious
Good effect.This buffer layer is although cross-linking, but blocking effect is limited, a small amount of solvent penetration is still had, to entire
The performance of element has an impact, and the preparation of this buffer layer needs to carry out ultraviolet processing, and this processing is in addition to increasing cost
Outside, can also uncertain influence be generated on the electric property of electrical component.
Therefore, during current solwution method prepares electrical component, it is badly in need of that a kind of cross-linking properties is good, and blocking effect is good,
Simple novel buffer layer solution is post-processed as buffer layer ink.
Summary of the invention
By to existing a large amount of repetition tests, the present invention, which provides one kind and can be used for solwution method, prepares organic semiconductor device
The buffer layer ink of part, wherein conductive materials use poly- [9,9- dioctyl fluorenes -9,9- are bis- (3-N, N- dimethylamino-propyl fluorenes)]
(PFN), crosslinking agent uses 150AB glue.
It is that a kind of epoxy resin 150AB glue is added in the molten conducting polymer PFN of alcohol in the present invention, 150AB is a kind of normal
The crosslinking agent seen, is easily dissolved into alcohol reagent, and the film of the mixed solution of three (ink) preparation can be crosslinked,
It is capable of the infiltration of effectively blocking electrode ink.
The reagents such as the auxiliary additive isopropanol, the ethylene glycol that are applied in the present invention can play enhancing solution (ink)
The effect of viscosity and boiling point can form good film on active layer.
By changing each additives ratio in the present invention, different preparation methods (spin coating, inkjet printing, silk can be passed through
Wire mark brush, nano impression etc.) prepare different-thickness film.
Solution of the present invention is not needed in preparing last handling process in the particular/special requirements ring such as vacuum oven, nitrogen glove box
Excess of solvent is removed in border.
Solution of the present invention is not needed in preparing last handling process in the special light sources condition such as ultraviolet lamp, infrared lamp, laser
Under post-processed.
Composition for ink of the present invention can thoroughly solve whole soln and prepare marking ink electrode infiltration in organic film device
The problem of, it can be effectively formed the conductive film of crosslinking by using PNF and 150AB glue, can be widely used in organic
In the thin-film devices such as light emitting diode, organic light emission battery, organic transistor, organic solar batteries.
Ink kind solvent for use of the present invention can be the boiling such as anhydrous methanol, dehydrated alcohol, anhydrous isopropyl alcohol, methyl cellosolve
Point is no more than 200 DEG C of alcohol reagent；
The organic acids reagent such as glacial acetic acid, acetic acid, formic acid can be also added in ink of the present invention as additive；
The volume ratio range of acids additive and alcohols additive is in 0.01-0.1 range in ink of the present invention；
The preparation method of ink of the present invention includes the processes such as heating, heating stirring, ultrasound；
PFN and 150A mass ratio range is preferably 0.1-0.25 in the present invention；The quality of 150A and 150B is preferably 2:
1；
The temperature range of film prepared by ink of the present invention is preferably at 80 DEG C or so, time preferred 60-100min.
Specific embodiment
Carry out the present invention will be described in detail technical solution below with reference to one embodiment, embodiment content is not regarded as to the present invention
Restriction.
Specific embodiment one
PFN (originating from Shenzhen Rui Xun photoelectric material Science and Technology Ltd.) 4mg is weighed, is transferred into 5mL reagent bottle A, is measured
1mL dehydrated alcohol reagent and 30 μ L glacial acetic acid reagent of additive are placed in reagent bottle, ultrasonic 60min.
It weighs 150A and (originates from Dongguan and grind safe chemical Science and Technology Ltd.) 40mg and be placed in reagent bottle, measure the anhydrous second of 1mL
Alcohol reagent is placed in reagent bottle B, ultrasonic 3min.
It weighs 150B and (originates from Dongguan and grind safe chemical Science and Technology Ltd.) 20mg and be placed in reagent bottle, measure the anhydrous second of 1mL
Alcohol reagent is placed in reagent bottle C, ultrasonic 3min.
Reagent bottle D is taken, successively measures 200 μ L 150A solution, 200 μ L PFN solution, 200 μ L 150B solution is placed in reagent
In bottle D.
Reagent bottle D is put into ultrasound 6min in Ultrasound Instrument.
Be added 5% or so isopropanol and 5-10% or so ethylene glycol in reagent bottle D, be added dropwise a small amount of formic acid in
In reagent bottle D, ink is made in ultrasonic 3min.
Test parameter is as follows
Temperature: 17.53 DEG C, viscosity: 1.646mPa/s, surface tension: 23.6mN/m.
Smooth crosslinked film can be obtained using low-temperature heat processing after sol evenning machine or blade coating cutter painting cloth.
Specific embodiment two
PFN (originating from Shenzhen Rui Xun photoelectric material Science and Technology Ltd.) 8mg is weighed, is transferred into 5mL reagent bottle A,
It measures 1mL dehydrated alcohol reagent and 50 μ L glacial acetic acid reagent of additive is placed in reagent bottle, ultrasonic 60min.
It weighs 150A and (originates from Dongguan and grind safe chemical Science and Technology Ltd.) 80mg and be placed in reagent bottle, measure 1mL n-butanol
Reagent is placed in reagent bottle B, ultrasonic 3min.
It weighs 150B and (originates from Dongguan and grind safe chemical Science and Technology Ltd.) 40mg and be placed in reagent bottle, measure 1mL n-butanol
Reagent is placed in reagent bottle C, ultrasonic 3min.
Reagent bottle D is taken, successively measures 200 μ L 150A solution, 150 μ L PFN solution, 200 μ L 150B solution is placed in reagent
In bottle D.
Reagent bottle D is put into ultrasound 6min in Ultrasound Instrument.
3.5% or so isopropanol and 5% or so ethylene glycol is added in reagent bottle D, be added dropwise a small amount of formic acid in
In reagent bottle D, ink is made in ultrasonic 3min.
Test parameter is as follows
Temperature: 16.47 DEG C, viscosity: 3.568mPa/s, surface tension: 25.5mN/m.
Ink is fitted into print cartridge, stable ink-jet drop can be formed with ink-jet printer.
By test, ink of the present invention can form homogeneous conductive film in coating process, have electron transport property；
Cushioning layer material dissolves in alcohol reagent, will not dissolve lower layer's active layer (active layer material need to be dissolved in mostly polarity compared with
In weak solvent)；Film itself can be crosslinked, and upper solution (ink) will not permeate, will not be molten the heating of upper layer
Take off buffer layer.
Claims (9)
1. a kind of buffer layer ink for preparing organic semiconductor device for solwution method, wherein including solvent, PFN and 150AB glue
And additive, it is characterised in that wherein solvent be one of anhydrous methanol, dehydrated alcohol, n-butanol, methyl cellosolve or
Several, additive is isopropanol and/or ethylene glycol.
2. ink described in claim 1, which is characterized in that wherein also include one or more of glacial acetic acid, acetic acid, formic acid
As additive.
3. ink as claimed in claim 2, which is characterized in that the volume ratio of acids additive and alcohols additive is 0.01-
0.1。
4. the ink of claim 3, which is characterized in that PFN and 150A mass ratio is 0.1-0.25.
5. the ink of claim 3 or 4, which is characterized in that the mass ratio of 150A and 150B is 2:1.
6. the preparation method of the buffer layer ink of claim 1-5 kind any one, includes the following steps:
(1) PFN, 150A, 150B are mixed with solvent respectively；
(2) three kinds of mixed solutions that step (1) is planted are mixed.
7. method of claim 6, which is characterized in that wherein hybrid mode is one of heating, stirring or ultrasound.
8. the purposes of ink described in any one of claim 1-5, which is characterized in that for Organic Light Emitting Diode, have
The preparation of machine light emitting electrochemical cell or solar battery.
9. a kind of method prepared using solwution method Organic Light Emitting Diode, organic light emission battery or solar battery, feature
It is, prepares buffer layer using ink described in claim 1-5 and in conjunction with spin coating or doctor blade process.
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| CN201710306069.0A CN109233440A (en) | 2017-05-03 | 2017-05-03 | A kind of buffer layer ink preparing organic semiconductor device for solwution method |
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| CN201710306069.0A CN109233440A (en) | 2017-05-03 | 2017-05-03 | A kind of buffer layer ink preparing organic semiconductor device for solwution method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110183907A (en) * | 2019-06-26 | 2019-08-30 | 华南理工大学 | A kind of polyfluorene class cathode cushioning layer material ink-jet ink and preparation method thereof |
| CN110499070A (en) * | 2019-08-14 | 2019-11-26 | 深圳市华星光电半导体显示技术有限公司 | Prepare the ink and its manufacturing method of cathode buffer layer |
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| CN110183907A (en) * | 2019-06-26 | 2019-08-30 | 华南理工大学 | A kind of polyfluorene class cathode cushioning layer material ink-jet ink and preparation method thereof |
| CN110499070A (en) * | 2019-08-14 | 2019-11-26 | 深圳市华星光电半导体显示技术有限公司 | Prepare the ink and its manufacturing method of cathode buffer layer |
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