CN109216264A - A kind of connecting hole adherency layer optimizing method - Google Patents
A kind of connecting hole adherency layer optimizing method Download PDFInfo
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- CN109216264A CN109216264A CN201811012190.3A CN201811012190A CN109216264A CN 109216264 A CN109216264 A CN 109216264A CN 201811012190 A CN201811012190 A CN 201811012190A CN 109216264 A CN109216264 A CN 109216264A
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- layer
- metal
- connecting hole
- optimizing method
- hole
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 48
- 150000004767 nitrides Chemical class 0.000 claims abstract description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 24
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010936 titanium Substances 0.000 claims abstract description 16
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000007704 transition Effects 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention provides a kind of connecting hole adherency layer optimizing method, wherein the substrate of a contact hole to be formed is provided, it is further comprising the steps of, and step 1, in forming contact hole on substrate；Step 2, a first metal layer is deposited on contact hole hole wall, bottom hole and substrate surface surface；Step 3, nitrogen treatment is carried out to the first metal layer surface；Step 4, the first metal layer surface after nitrogen treatment forms a metal mold nitride layer, and the transition elements of metal mold nitride layer and the element of the first metal layer are identical；Step 5: one second metal being filled to contact hole, makes the second metal full of contact hole and covers metal mold nitride layer surface；Step 6: removing the second extra metal.The beneficial effects of the present invention are keep the technique of connecting hole adhesion layer more stable so as to improve the delay effect of subsequent nitridation titanium lamina by carrying out surfaces nitrided processing to metal titanium lamina.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of connecting hole to adhere to layer optimizing method.
Background technique
Current connecting hole adherency layer process generallys use physical vapour deposition (PVD) (PVD:physical vapor
Deposition) method deposited metal titanium lamina and use chemical vapor deposition (CVD:Chemical vapor
Deposition) the mode of method cvd nitride titanium lamina, but with the thin layer of titanium nitride of chemical vapor deposition
Resistance is higher, needs hydrogen plasma process to reduce the resistance of the thin layer of titanium nitride, until the resistance is close to using physics gas
The resistance of the metal titanium lamina of phase deposition method deposition.Process costs can be made higher in this way, operation difficulty is bigger than normal.Because of physics gas
The metal titanium lamina of phase deposition method deposition and the thin layer of titanium nitride of chemical vapor deposition are integrated into the same master
It in two independent reaction chambers of board, and is in not vacuum breaker state, so in the skill of 14nm between this twice processing procedure
When below art node, the thin layer of titanium nitride of atomic layer deposition (ALD:atomic layer deposition) method deposition can be taken
Become adsorption layer for the thin layer of titanium nitride of chemical vapor deposition, but the deposition process of Atomic layer deposition method is to electrode
Compare it is sensitive, to generate delay effect.
Summary of the invention
For the above-mentioned problems in the prior art, one kind is now provided and is intended to carry out surfaces nitrided place to metal titanium lamina
Reason makes the connecting hole adherency that the technique of connecting hole adhesion layer is more stable so as to improve the delay effect of subsequent nitridation titanium lamina
Layer optimizing method.
Specific technical solution is as follows:
A kind of connecting hole adherency layer optimizing method, wherein the substrate of a contact hole to be formed is provided, further includes following step
Suddenly,
Step 1, in forming contact hole on substrate；
Step 2, a first metal layer is deposited on contact hole hole wall, bottom hole and substrate surface surface；
Step 3, nitrogen treatment is carried out to the first metal layer surface；
Step 4, the first metal layer surface after nitrogen treatment forms a metal mold nitride layer, metal mold nitride layer
Transition elements it is identical as the element of the first metal layer；
Step 5: one second metal being filled to contact hole, makes the second metal full of contact hole and covers metal mold nitride layer
Surface；
Step 6: removing the second extra metal.
Preferably, connecting hole adhere to layer optimizing method, wherein further include between step 1 and step 2, to contact hole hole wall,
Bottom hole and substrate surface carry out prerinse.
Preferably, connecting hole adheres to layer optimizing method, wherein prerinse uses argon plasma.
Preferably, connecting hole adheres to layer optimizing method, wherein the first metal layer material is titanium.
Preferably, connecting hole adheres to layer optimizing method, wherein the nitrogen treatment in step 3, which uses, contains nitrogen plasma.
Preferably, connecting hole adheres to layer optimizing method, wherein metal mold nitride layer passes through chemical vapor deposition process shape
At.
Preferably, connecting hole adheres to layer optimizing method, wherein nitrogen treatment and chemical vapor deposition process are in same chamber
Middle completion.
Preferably, connecting hole adheres to layer optimizing method, wherein metal mold nitride layer uses atom layer deposition process shape
At.
Preferably, connecting hole adheres to layer optimizing method, wherein the nitrogen treatment the first metal layer surface in step 3 makes the
One layer on surface of metal forms the nitride layer that thickness is greater than 5 angstroms.
Preferably, connecting hole adheres to layer optimizing method, wherein the second metal is tungsten.
Above-mentioned technical proposal has the following advantages that or the utility model has the advantages that carries out surfaces nitrided processing to metal titanium lamina, thus
The delay effect for improving subsequent nitridation titanium lamina, keeps the technique of connecting hole adhesion layer more stable.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is the corresponding wafer schematic cross-section of step 1 for the embodiment that connecting hole of the present invention adheres to layer optimizing method；
Fig. 2 is corresponding after the deposited metal titanium lamina for the step 3 of the embodiment of connecting hole of the present invention adherency layer optimizing method
Wafer schematic cross-section；
Fig. 3 is corresponding wafer after the nitrogen treatment of the step 3 of the embodiment of connecting hole of the present invention adherency layer optimizing method
Schematic cross-section；
Fig. 4 is the corresponding wafer schematic cross-section of step 4 for the embodiment that connecting hole of the present invention adheres to layer optimizing method；
Fig. 5 is the corresponding wafer schematic cross-section of step 5 for the embodiment that connecting hole of the present invention adheres to layer optimizing method；
Fig. 6 is the corresponding wafer schematic cross-section of step 6 for the embodiment that connecting hole of the present invention adheres to layer optimizing method.
Appended drawing reference: 1, contact hole, 2, the first metal layer, 3, nitride layer, 4, metal mold nitride layer, the 5, second metal
Layer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art without creative labor it is obtained it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The present invention will be further explained below with reference to the attached drawings and specific examples, but not as the limitation of the invention.
The present invention provides a kind of connecting hole adherency layer optimizing method, is the process optimization of connecting hole adhesion layer, is suitable for ALD
The deposition of method.
As shown in figures 1 to 6, Fig. 1-6 is the corresponding section of step each in connecting hole provided by the invention adherency layer optimizing method
Schematic diagram provides the substrate of contact hole 1 to be formed in specific technical solution, further comprising the steps of,
Step 1, in forming contact hole 1 on substrate, the wafer section after the completion of the step is as shown in Figure 1；
Step 2, in 1 hole wall of contact hole, bottom hole and substrate surface surface deposit the first metal layer 2, and wafer section is such as at this time
Shown in Fig. 2；
Step 3, nitrogen treatment is carried out to 2 surface of the first metal layer, to form mononitride layer in the first metal layer surface
3, the wafer section after the completion of the step is as shown in Figure 3；
Step 4,2 surface of the first metal layer after nitrogen treatment forms metal mold nitride layer 4, metal mold nitride layer
4 transition elements is identical as the element of the first metal layer 2, and the wafer section after the completion of the step is as shown in Figure 4；
Step 5: the second metal being filled to contact hole 1, makes the second metal full of contact hole 1 and covers metal mold nitride layer
4 surfaces, the wafer section after the completion of the step are as shown in Figure 5；
Step 6: removing the second extra metal, the wafer section after the completion of the step is as shown in Figure 6.
Further, in the above-described embodiments, the first metal layer 2 can pass through physical vapour deposition (PVD) (PVD:physical
Vapor deposition) technique formed.
Further, in the above-described embodiments, further include between step 1 and step 2, to 1 hole wall of contact hole, bottom hole and lining
Bottom surface carries out prerinse, and carrying out prewashed purpose is to remove 1 hole wall of contact hole, bottom hole and the impurity of substrate surface.
Further, in the above-described embodiments, argon plasma can be used in prerinse.
Further, in the above-described embodiments, 2 material of the first metal layer is titanium.
Further, in the above-described embodiments, the nitrogen treatment in step 3 can be used containing nitrogen plasma.
Further, in the above-described embodiments, metal mold nitride layer 4 can be formed by chemical vapor deposition process.
Further, in the above-described embodiments, nitrogen treatment and the chemical vapor deposition for being subsequently formed metal mold nitride layer
Product technique can be completed in same chamber, can also carry out in independent chamber.
Further, in the above-described embodiments, metal mold nitride layer 4 can also be formed using atom layer deposition process,
Atom layer deposition process can be used if as below the technology node in 14nm when and form metal mold nitride layer, due to the first metal
The preferred embodiment of layer 2 is Titanium, is titanium nitride layer in this embodiment bottom die nitride layer, can pass through atom
Layer depositing operation forms titanium nitride layer, due to having carried out surfaces nitrided processing to the first metal layer, that is, titanium coating in step 3,
Therefore it can improve the delay effect that atom layer deposition process forms titanium nitride layer.
Further, in the above-described embodiments, 2 surface of nitrogen treatment the first metal layer in step 3 makes the first metal layer 2
Surface forms the nitride layer 3 that thickness is greater than 5 angstroms.
Further, in the above-described embodiments, the second metal is tungsten.
The beneficial effects of the present invention are deposit the first metal layer 2 using physical gas-phase deposite method and use atomic layer
Deposition method deposited metal type nitride layer 4 (wherein can also form metal mold nitride layer using chemical vapor deposition process
4) the connecting hole adherency layer optimizing method for, and to the first metal layer of deposition 2 carrying out nitrogen treatment can be effectively improved subsequent
The delay effect of metal mold nitride layer 4 keeps the technique of 1 adhesion layer of contact hole more stable.
To sum up, the present invention provides a kind of connecting holes to adhere to layer optimizing method, and this method passes through lithography and etching shape first
After contact hole 1, first to the prerinse of contact hole 1, the first gold medal then is deposited with physical gas-phase deposite method on 1 surface of contact hole
Belong to layer 2, and carry out nitrogen plasma nitrogen treatment, then (wherein with Atomic layer deposition method deposited metal type nitride layer 4
Metal mold nitride layer 4 can also be formed using chemical vapor deposition process), it is filled followed by second metal layer 5 is carried out, finally
Extra second metal layer 5 is removed with the method for chemical mechanical grinding.It can simply and effectively make connecting hole viscous by this method
The technique of attached layer is more stable.
The above is only preferred embodiments of the present invention, are not intended to limit the implementation manners and the protection scope of the present invention, right
For those skilled in the art, it should can appreciate that and all replace with being equal made by description of the invention and diagramatic content
It changes and obviously changes obtained scheme, should all be included within the scope of the present invention.
Claims (10)
1. a kind of connecting hole adheres to layer optimizing method, which is characterized in that provide the substrate of a contact hole to be formed, further include following
Step,
Step 1, in forming contact hole on the substrate；
Step 2, a first metal layer is deposited on the contact hole hole wall, bottom hole and the substrate surface surface；
Step 3, nitrogen treatment is carried out to the first metal layer surface；
Step 4, the first metal layer surface after nitrogen treatment forms a metal mold nitride layer, the metal mold nitridation
The transition elements of nitride layer is identical as the element of the first metal layer；
Step 5: one second metal being filled to the contact hole, makes second metal full of the contact hole and covers the gold
Genotype nitride layer surface；
Step 6: removing extra second metal.
2. connecting hole as described in claim 1 adheres to layer optimizing method, which is characterized in that the step 1 and the step 2 it
Between further include, to the contact hole hole wall, bottom hole and the substrate surface carry out prerinse.
3. connecting hole as claimed in claim 2 adheres to layer optimizing method, which is characterized in that the prerinse uses argon plasma
Body.
4. connecting hole as described in claim 1 adheres to layer optimizing method, which is characterized in that the first metal layer material is
Titanium.
5. connecting hole as described in claim 1 adheres to layer optimizing method, which is characterized in that the nitrogen treatment in the step 3
Using containing nitrogen plasma.
6. connecting hole as claimed in claim 5 adheres to layer optimizing method, which is characterized in that the metal mold nitride layer passes through
Chemical vapor deposition process is formed.
7. connecting hole as claimed in claim 6 adheres to layer optimizing method, which is characterized in that the nitrogen treatment and the chemistry
Gas-phase deposition is completed in same chamber.
8. connecting hole as described in claim 1 adheres to layer optimizing method, which is characterized in that the metal mold nitride layer uses
Atom layer deposition process is formed.
9. connecting hole as described in claim 1 adheres to layer optimizing method, which is characterized in that the nitrogen treatment in the step 3
The first metal layer surface makes the first metal layer surface form the nitride layer that thickness is greater than 5 angstroms.
10. connecting hole as described in claim 1 adheres to layer optimizing method, which is characterized in that second metal is tungsten.
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| CN201811012190.3A CN109216264A (en) | 2018-08-31 | 2018-08-31 | A kind of connecting hole adherency layer optimizing method |
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| CN201811012190.3A CN109216264A (en) | 2018-08-31 | 2018-08-31 | A kind of connecting hole adherency layer optimizing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950253A (en) * | 2019-03-15 | 2019-06-28 | 惠科股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN109950255A (en) * | 2019-03-15 | 2019-06-28 | 惠科股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| WO2020187056A1 (en) * | 2019-03-15 | 2020-09-24 | 惠科股份有限公司 | Array substrate and fabrication method therefor, and display panel |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1532915A (en) * | 2002-12-30 | 2004-09-29 | ����ʿ�뵼������˾ | Fabrication method of ferroelectric random access memory |
| CN1806315A (en) * | 2004-04-09 | 2006-07-19 | 东京毅力科创株式会社 | Method for forming ti film and tin film, contact structure, computer readable storing medium and computer program |
| CN101325176A (en) * | 2007-06-15 | 2008-12-17 | 株式会社瑞萨科技 | Manufacturing method of semiconductor device |
| CN104022068A (en) * | 2013-02-28 | 2014-09-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN105118806A (en) * | 2015-07-30 | 2015-12-02 | 上海华力微电子有限公司 | Method of preventing contact hole dimension deviation in subsequent metal silicide forming process |
| CN106158728A (en) * | 2015-04-03 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | The forming method of contact hole thromboembolism |
-
2018
- 2018-08-31 CN CN201811012190.3A patent/CN109216264A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1532915A (en) * | 2002-12-30 | 2004-09-29 | ����ʿ�뵼������˾ | Fabrication method of ferroelectric random access memory |
| CN1806315A (en) * | 2004-04-09 | 2006-07-19 | 东京毅力科创株式会社 | Method for forming ti film and tin film, contact structure, computer readable storing medium and computer program |
| CN101325176A (en) * | 2007-06-15 | 2008-12-17 | 株式会社瑞萨科技 | Manufacturing method of semiconductor device |
| CN104022068A (en) * | 2013-02-28 | 2014-09-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN106158728A (en) * | 2015-04-03 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | The forming method of contact hole thromboembolism |
| CN105118806A (en) * | 2015-07-30 | 2015-12-02 | 上海华力微电子有限公司 | Method of preventing contact hole dimension deviation in subsequent metal silicide forming process |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950253A (en) * | 2019-03-15 | 2019-06-28 | 惠科股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN109950255A (en) * | 2019-03-15 | 2019-06-28 | 惠科股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| WO2020187056A1 (en) * | 2019-03-15 | 2020-09-24 | 惠科股份有限公司 | Array substrate and fabrication method therefor, and display panel |
| CN109950253B (en) * | 2019-03-15 | 2022-08-05 | 惠科股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN109950255B (en) * | 2019-03-15 | 2022-12-06 | 惠科股份有限公司 | Array substrate, manufacturing method thereof and display panel |
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