CN109194319B - PMOS tube driving circuit - Google Patents
PMOS tube driving circuit Download PDFInfo
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- CN109194319B CN109194319B CN201810919143.0A CN201810919143A CN109194319B CN 109194319 B CN109194319 B CN 109194319B CN 201810919143 A CN201810919143 A CN 201810919143A CN 109194319 B CN109194319 B CN 109194319B
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- 230000000087 stabilizing effect Effects 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 3
- 150000004706 metal oxides Chemical class 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000000670 limiting effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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Abstract
The invention discloses a PMOS (P-channel metal oxide semiconductor) tube driving circuit which comprises a triode switch, a first control circuit, a second control circuit and a PMOS tube, wherein the triode switch is connected with the first control circuit; the input end of the triode switch receives a control signal, and the output end of the triode switch is connected with one input end of the first control circuit and one input end of the second control circuit; the output ends of the first control circuit and the second control circuit are connected with the input end of the PMOS tube, and the other input end of the first control circuit and the second control circuit is connected with a power supply voltage; the first control circuit is configured to make a voltage applied to the PMOS transistor substantially equal to the power supply voltage when the power supply voltage is a low voltage; the second control circuit is configured to maintain a voltage applied to the PMOS transistor at a stable value when the power supply voltage is a high voltage. The PMOS tube driving circuit can adapt to large-range changes of high and low power supply voltages and has an ultra-wide power supply voltage range.
Description
Technical Field
The invention belongs to the technical field of electronic circuits, and particularly relates to a PMOS (P-channel metal oxide semiconductor) tube driving circuit.
Background
An insulated gate field effect transistor (MOS) transistor is a semiconductor device which utilizes the electric field effect of an input loop to control the current of an output loop. The bipolar transistor has the advantages of a bipolar transistor, and has the outstanding advantages of low power consumption, extremely high input impedance, low noise, good thermal stability, strong radiation resistance and the like. Thus, the method has wide application in electronic circuits. According to different channel materials, the MOS transistor is divided into a PMOS transistor and an NMOS transistor.
Since the PMOS tube is a voltage control device, the output of the PMOS tube is subjected to a grid source voltage VGSControl, VGSIs closely related to the supply voltage. General VGSThe driving circuit mostly adopts the resistance voltage division controlled by the triode, which is a good solution when the power voltage is not changed much. However, when the power supply voltage changes greatly, the limitation of the resistor voltage division is obvious. Because, when the power supply voltage becomes higher, VGSInevitably increases, even exceeds the PMOS tube VGSThe safe voltage of (2). Although many MOS tubes have protective stabilivolt insideHowever, the driving voltage exceeds the voltage of the regulator tube, which causes large static power consumption. When the supply voltage becomes lower, VGSInevitably reduced, and may cause insufficient conduction, thereby increasing power consumption, even lower than that of the PMOS transistor VGSThe PMOS tube is not connected, which results in failure of the original design. V is driven by a voltage stabilizing tubeGSThe same problem exists with circuits. The voltage stabilizing value of the voltage stabilizing tube is lower, although the PMOS tube can still work when the power voltage is lower, the application environment of the lower power voltage is limited because the current limiting resistor always has voltage drop, and the circuit can be more power-consumed when the power voltage is higher.
Disclosure of Invention
The invention aims to provide a PMOS (P-channel metal oxide semiconductor) tube driving circuit which can adapt to the wide range change of the high and low power supply voltage, can normally conduct a PMOS tube and can also enable a V tube to be normally conductedGS(gate-source voltage) is always in the safe voltage range.
One aspect of the invention provides a PMOS tube driving circuit, which comprises a triode switch, a first control circuit, a second control circuit and a PMOS tube; the input end of the triode switch receives a control signal, and the output end of the triode switch is connected with one input end of the first control circuit and one input end of the second control circuit; the output ends of the first control circuit and the second control circuit are connected with the input end of the PMOS tube, and the other input end of the first control circuit and the second control circuit is connected with a power supply voltage; the first control circuit is configured to make a voltage applied to the PMOS transistor substantially equal to the power supply voltage when the power supply voltage is a low voltage; the second control circuit is configured to maintain a voltage applied to the PMOS transistor at a stable value when the power supply voltage is a high voltage.
The PMOS tube driving circuit has an ultra-wide power supply voltage range and can work within a range slightly higher than the starting voltage and the drain-source breakdown voltage of the PMOS tube.
Drawings
FIG. 1 is a schematic block diagram of a PMOS transistor driving circuit according to an embodiment of the present invention.
FIG. 2 is an equivalent circuit diagram of the first control circuit of the PMOS transistor driving circuit according to an embodiment of the present invention.
FIG. 3 is an equivalent circuit diagram of the second control circuit of the PMOS transistor driving circuit according to one embodiment of the present invention.
Fig. 4 is an equivalent circuit diagram showing the combined action of the first control circuit and the second control circuit of the PMOS transistor driving circuit according to the embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following detailed description will be made with reference to the accompanying drawings.
FIG. 1 is a schematic block diagram of a PMOS transistor driving circuit according to an embodiment of the present invention. As shown in fig. 1, the PMOS transistor driving circuit of the present embodiment includes a transistor switch 1, a first control circuit 2, a second control circuit 3, and a PMOS transistor 4. The input end of the triode switch 1 receives a control signal, the output end of the triode switch is connected with one input end of the first control circuit 2 and the second control circuit 3, the output ends of the first control circuit 2 and the second control circuit 3 are connected with the input end of the PMOS tube 4, and the other input end of the triode switch is connected with a power supply voltage VCCAnd (4) connecting.
Fig. 2 is an equivalent circuit diagram of the first control circuit of the PMOS transistor driving circuit according to an embodiment of the present invention. Fig. 3 is an equivalent circuit diagram of the second control circuit of the PMOS transistor driving circuit according to an embodiment of the present invention. Fig. 4 is an equivalent circuit diagram showing the combined action of the first control circuit and the second control circuit of the PMOS transistor driving circuit according to the embodiment of the present invention.
IN fig. 2 to 4, IN denotes an input control signal, OUT1 denotes an output of the first control circuit 2, OUT2 denotes an output of the second control circuit 3, VCCRepresenting the supply voltage. In this embodiment, the PMOS transistor 4 is a PMOS transistor V3, the gate of the PMOS transistor V3 is the input terminal of the PMOS transistor 4, and the source is connected to the power voltage VCC. The triode switch 1 comprises a triode V1, a first voltage-dividing resistor R1 and a second voltage-dividing resistor R2. The first voltage dividing resistor R1 and the second voltage dividing resistor R2 form a voltage dividing circuit of the triode V1 so as to improve the resistance of the triode V1Interference capability. The base of the transistor V1 is connected to the control signal IN through the voltage divider circuit.
The first control circuit 2 comprises a collector resistor R3, an output current-limiting resistor R4 and a capacitor C1 connected with the output current-limiting resistor R4 in parallel, one end of the collector resistor R3 is connected with the collector of a triode V1, and is connected with the output end OUT1 of the first control circuit 2 through a parallel circuit consisting of the output current-limiting resistor R4 and the capacitor C1, and the other end is connected with a power supply voltage VCCAnd (4) connecting.
When the IN terminal as an input terminal inputs a low level, the transistor V1 is not turned on. When the IN terminal inputs a high level, the transistor V1 is turned on. At this time, the base current I of the transistor V1BAnd maximum collector current IC(max)The following were used:
IB＝(VIN-0.7)/R1
IC(max)＝VCC/R3
wherein, VINRepresenting the input terminal voltage, R1 represents the resistance values of the first divider resistor and the collector resistor, respectively, R3.
To make transistor V1 conduct in saturation, β I should be madeB＞＞ICWhere β represents the amplification of the triode. This can be achieved by designing the transistors with appropriate R1, R3 and choosing larger β values.
The voltage between the collector C and the emitter E of the transistor V1 which is in saturation conduction is about 0.1V, i.e. the C pole potential of V1 is 0.1V. Because the input impedance of the PMOS tube V3 is extremely high, no current flows through the output current limiting resistor R4, and the voltage at the OUT1 end is about 0.1V. The terminal OUT1 is directly connected to the G-pole (gate) of PMOS transistor 4, and the power supply voltage Vcc is directly applied to the S-pole (source) of PMOS transistor V3, i.e., the gate-source voltage V of PMOS transistor V3 at this timeGS＝VG-VsAnd is approximately equal to-Vcc. Thus, the supply voltage is substantially entirely applied to V by the control of the first control circuit 2GSIn contrast to the conventional resistor divider circuit, only a partial voltage is applied to VGSIn this way, the power supply voltage of the present embodiment can be much lower.
The second control circuit 3 includes a zener diode V2, one end of the zener diode V2 is connected to the parallel circuit of the output current limiting resistor R4 and the capacitor C1 and serves as an output terminal of the second control circuit 3, and the other end is connected to the power supply voltage Vcc.
In the case of the transistor V1 being turned on in saturation, if the supply voltage Vcc reaches the regulated voltage (reverse breakdown voltage) of the zener diode V2, the zener diode V2 functions such that the gate-source voltage V3 of the PMOS transistor V3 is no matter how high the supply voltage Vcc isGSIt can always be kept around the regulated value of the diode V2. So that the PMOS transistor V3 can still work normally under the condition of high Vcc and no V appearsGSAnd the condition that the PMOS tube is damaged is caused by over-size.
Therefore, when the supply voltage Vcc is low (lower than the stable voltage of the diode V2), the first control circuit 2 operates, and when the supply voltage Vcc is high (up to above the stable voltage of the diode V2), the second control circuit 3 operates, so that the gate-source voltage V of the PMOS transistor V3GSCan always be greater than the turn-on voltage and less than the safe voltage.
In summary, the PMOS transistor driving circuit of the present embodiment has a very wide power voltage range, the gate of the PMOS transistor is a load of the cascode circuit composed of the triodes, and the output terminal of the cascode circuit is a dual-output control structure. The low-voltage control signal of +5V level is applied to the base of triode. When the control signal is low level, the triode is turned off, and no voltage difference, namely V, exists between G, S electrodes of the PMOS tubeGSWhen the voltage is equal to 0, the PMOS tube is also in an off state; when the control signal is high level, the triode is conducted, because the output end of the common-emitter amplifying circuit is a double-path output control structure, when the power supply voltage is low, the collector output control formed by the voltage stabilizing diode does not work, the voltage is completely dropped on an output control channel formed by the collector resistor, so that the G, S voltage of the PMOS tube is equal to the power supply voltage in value (larger than the starting voltage of the PMOS tube), and the PMOS tube is conducted. When the power supply voltage is higher, the voltage stabilizing diode controlled by the second output fixes the G, S voltage (larger than the starting voltage of the PMOS tube), and the PMOS tube is still conducted. The design of the double-output control structure enables the PMOS tube to be normally switched on and off under the condition of ultra-wide power supply voltage.
That is, in the present embodimentThe triode common-emitter amplifier circuit forms a dual-output control structure, the voltage stabilization value of a voltage stabilizing diode (or a voltage stabilizer) or the voltage drop generated by a collector resistor are combined to be used as the control voltage of the PMOS tube, and when the power supply voltage range is wide, the control voltage can still meet the requirement of the V voltage of the PMOS tubeGSThe object as claimed.
The PMOS transistor driving circuit according to the above embodiment of the present invention has the following advantages: 1. the ultra-wide power supply voltage range can work within a range slightly higher than the starting voltage and the drain-source breakdown voltage of the PMOS tube; 2. simple structure, small volume, easy realization and low cost.
While certain exemplary embodiments of the present invention have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that the described embodiments may be modified in various different ways without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative in nature and should not be construed as limiting the scope of the invention.
Claims (3)
1. A PMOS tube driving circuit is characterized by comprising a triode switch, a first control circuit, a second control circuit and a PMOS tube;
the input end of the triode switch receives a control signal, and the output end of the triode switch is connected with one input end of the first control circuit and one input end of the second control circuit;
the output ends of the first control circuit and the second control circuit are connected with the input end of the PMOS tube, and the other input end of the first control circuit and the second control circuit is connected with a power supply voltage;
the first control circuit is configured to make a voltage applied to the PMOS transistor substantially equal to the power supply voltage when the power supply voltage is a low voltage;
the second control circuit is configured to maintain a voltage applied to the PMOS transistor at a stable value when the power supply voltage is a high voltage,
the triode switch comprises a triode, a first voltage division resistor and a second voltage division resistor, the first voltage division resistor and the second voltage division resistor form a voltage division circuit of the triode, the base electrode of the triode is connected with the control signal through the voltage division circuit,
the first control circuit comprises a collector resistor, an output current-limiting resistor and a capacitor connected with the output current-limiting resistor in parallel, one end of the collector resistor is connected with the collector of the triode and is connected with the output end of the first control circuit through a parallel circuit consisting of the output current-limiting resistor and the capacitor, and the other end of the collector resistor is connected with the power supply voltage,
the second control circuit comprises a voltage stabilizing diode, one end of the voltage stabilizing diode is connected with the parallel circuit and is used as the output end of the second control circuit, the other end of the voltage stabilizing diode is connected with the power supply voltage,
and the grid electrode of the PMOS tube is used as the input end of the PMOS tube, and the source electrode of the PMOS tube is connected with the power supply voltage.
2. The PMOS transistor driver circuit of claim 1,
the low voltage refers to a voltage lower than a stable voltage of the zener diode, and the high voltage refers to a voltage equal to or higher than the stable voltage of the zener diode.
3. The PMOS transistor driver circuit of claim 1 or 2,
the control signal is a low-voltage control signal with +5V level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810919143.0A CN109194319B (en) | 2018-08-13 | 2018-08-13 | PMOS tube driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810919143.0A CN109194319B (en) | 2018-08-13 | 2018-08-13 | PMOS tube driving circuit |
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| Publication Number | Publication Date |
|---|---|
| CN109194319A CN109194319A (en) | 2019-01-11 |
| CN109194319B true CN109194319B (en) | 2022-07-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810919143.0A Active CN109194319B (en) | 2018-08-13 | 2018-08-13 | PMOS tube driving circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113346884A (en) * | 2021-06-23 | 2021-09-03 | 广东博力威科技股份有限公司 | PMOS tube driving circuit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102811531A (en) * | 2011-06-02 | 2012-12-05 | 海洋王照明科技股份有限公司 | Step-down LED driving circuit and lamp |
| CN105182862A (en) * | 2015-10-16 | 2015-12-23 | 郑州源创智控有限公司 | Networked intelligent warehouse status detection control system |
| CN205178880U (en) * | 2015-12-08 | 2016-04-20 | 广州市千牧电子有限公司 | Switch control device |
| CN106026338A (en) * | 2016-06-12 | 2016-10-12 | 深圳硕日新能源科技有限公司 | Power supply circuit capable of realizing dormant state of solar controller |
| CN107547070A (en) * | 2017-10-30 | 2018-01-05 | 西安科技大学 | Using the PMOS drive circuit and its design method of active technology of releasing |
| CN107909992A (en) * | 2017-12-04 | 2018-04-13 | 成都星达微科技有限公司 | A kind of campus dormitory active noise reduction system of powered stable |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8051945B2 (en) * | 2008-05-23 | 2011-11-08 | Nexteer (Beijing) Technology Co., Ltd. | Electric power steering system, controller, and method of operation |
| CN101867168B (en) * | 2010-05-21 | 2014-04-02 | 海洋王照明科技股份有限公司 | Power protecting circuit and LED lamp |
| US8780516B2 (en) * | 2012-05-08 | 2014-07-15 | General Electric Conpany | Systems, methods, and apparatus for voltage clamp circuits |
-
2018
- 2018-08-13 CN CN201810919143.0A patent/CN109194319B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102811531A (en) * | 2011-06-02 | 2012-12-05 | 海洋王照明科技股份有限公司 | Step-down LED driving circuit and lamp |
| CN105182862A (en) * | 2015-10-16 | 2015-12-23 | 郑州源创智控有限公司 | Networked intelligent warehouse status detection control system |
| CN205178880U (en) * | 2015-12-08 | 2016-04-20 | 广州市千牧电子有限公司 | Switch control device |
| CN106026338A (en) * | 2016-06-12 | 2016-10-12 | 深圳硕日新能源科技有限公司 | Power supply circuit capable of realizing dormant state of solar controller |
| CN107547070A (en) * | 2017-10-30 | 2018-01-05 | 西安科技大学 | Using the PMOS drive circuit and its design method of active technology of releasing |
| CN107909992A (en) * | 2017-12-04 | 2018-04-13 | 成都星达微科技有限公司 | A kind of campus dormitory active noise reduction system of powered stable |
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| CN109194319A (en) | 2019-01-11 |
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Address after: No. 2016, Tanghe Road, economic development zone, Bengbu City, Anhui Province 233030 Patentee after: Anhui North Microelectronics Research Institute Group Co.,Ltd. Address before: No. 2016, Tanghe Road, economic development zone, Bengbu City, Anhui Province 233030 Patentee before: NORTH ELECTRON RESEARCH INSTITUTE ANHUI Co.,Ltd. |