CN109194301A - A kind of bulk accoustic wave filter chip - Google Patents
A kind of bulk accoustic wave filter chip Download PDFInfo
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- CN109194301A CN109194301A CN201811444995.5A CN201811444995A CN109194301A CN 109194301 A CN109194301 A CN 109194301A CN 201811444995 A CN201811444995 A CN 201811444995A CN 109194301 A CN109194301 A CN 109194301A
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- resonator
- acoustic wave
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- 239000000463 material Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000002305 electric material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of bulk accoustic wave filter chips, are related to filter field.It include: bulk acoustic wave resonator group, at least one tuned resonator and at least three pads, bulk acoustic wave resonator group is connect with each tuned resonator, each pad respectively, each tuned resonator is connect with bulk acoustic wave resonator group, or connect respectively with bulk acoustic wave resonator group and any pad, the resonance frequency of each tuned resonator be respectively less than or greater than any bulk acoustic wave resonator in bulk acoustic wave resonator group resonance frequency.Bulk accoustic wave filter chip provided by the invention, using resonator disresonance frequency range capacitance characteristic, by be arranged resonance frequency be much smaller than or much larger than bulk acoustic wave resonator group tuned resonator, achieve the electrology characteristic of capacitor, it is not take up the size of package substrate, the capacitor that tuning is additionally set again is not needed on package substrate, substantially reduces the package dimension of filter chip.
Description
Technical field
The present invention relates to filter field more particularly to a kind of bulk accoustic wave filter chips.
Background technique
With the progress of mobile communication system, the rapid proliferation of portable data assistance, as mobile communications device component
One of filter receive more and more attention and study.Since bulk accoustic wave filter chip has small in size, Insertion Loss is small etc.
Feature is widely used in portable terminal.
In front-end module, bulk accoustic wave filter chip usually requires to increase tuning network to realize preferable filter
Can, tuned cell generally comprises inductance and capacity cell, and existing tunable technology is by discrete inductance element and capacity cell point
Not with filter electrical ties and encapsulate, then be tuned.
Currently, inductive element design can be spiral inductance by the prior art, it is embedded into package substrate, to reduce
Filter chip size.But since package substrate dielectric constant is usually smaller, can not be realized by the method for embedded capacitor common
The capacitor of capacitance, therefore capacitor is usually to be placed within chip package in the form of discrete component, leads to filter chip ruler
It is very little to further reduce.
Summary of the invention
The technical problem to be solved by the present invention is in view of the deficiencies of the prior art, provide a kind of bulk accoustic wave filter core
Piece.
The technical scheme to solve the above technical problems is that
A kind of bulk accoustic wave filter chip, comprising: bulk acoustic wave resonator group, at least one tuned resonator and at least three
Pad, the bulk acoustic wave resonator group are connect with each tuned resonator, each pad respectively, each tuning
Resonator is connect with the bulk acoustic wave resonator group, or is connect respectively with the bulk acoustic wave resonator group and any pad,
Each tuned resonator resonance frequency is respectively less than or greater than any bulk acoustic wave resonator in the bulk acoustic wave resonator group
Resonance frequency.
The beneficial effects of the present invention are: bulk accoustic wave filter chip provided by the invention, using resonator in disresonance frequency
Section capacitance characteristic, by be arranged resonance frequency be much smaller than or much larger than bulk acoustic wave resonator group tuned resonator, make in fact
The electrology characteristic of existing capacitor, is not take up the size of package substrate, and the electricity that tuning is additionally arranged again is not needed on package substrate
Hold, substantially reduces the package dimension of filter chip.
The advantages of additional aspect of the invention, will be set forth in part in the description, and will partially become from the following description
It obtains obviously, or practice is recognized through the invention.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that the embodiment of bulk accoustic wave filter chip of the present invention provides；
Fig. 2 is the structural schematic diagram that the other embodiments of bulk accoustic wave filter chip of the present invention provide.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and illustrated embodiment is served only for explaining the present invention,
It is not intended to limit the scope of the present invention.
As shown in Figure 1, for the structural schematic diagram that provides of embodiment of bulk accoustic wave filter chip of the present invention, for convenient for saying
It is bright, now by taking 1 tuned resonator, 2,3 pads 3 as an example, it is illustrated.
The bulk accoustic wave filter chip includes: bulk acoustic wave resonator group 1, tuned resonator 2 and three pads 3, bulk acoustic wave
Resonator group 1 is connect with tuned resonator 2 and three pads 3 respectively, tuned resonator 2 respectively with bulk acoustic wave resonator group 1 and
Any pad 3 connects, and 2 resonance frequency of tuned resonator is less than the resonance frequency of bulk acoustic wave resonator group 1.
It should be understood that when tuned resonator 2 be it is multiple when, remaining tuned resonator 2 can in bulk acoustic wave resonator group 1
Any bulk acoustic wave resonator two ports connection, or with any two bulk acoustic resonance in bulk acoustic wave resonator group 1
Device connection.
It should be understood that the resonance frequency of tuned resonator 2 is less than or greater than the bulk acoustic wave resonator in bulk acoustic wave resonator group 1
Resonance frequency when, when the bulk acoustic wave resonator resonance in bulk acoustic wave resonator group 1, tuned resonator 2 will not resonance, in order to
It realizes better capacitive effect, prevents the resonance of tuned resonator 2 from interfering, the resonance frequency of tuned resonator 2 can be arranged
At far smaller than or being far longer than the resonance frequency of bulk acoustic wave resonator group 1, specific value can according to actual needs and experiment
It learns.
Since the resonance frequency of bulk acoustic wave resonator is determined by overall film thickness, it can be by increasing tuned resonance
The film thickness of device 2 reduces the resonance frequency of tuned resonator 2, or reduces the film thickness of tuned resonator 2, improves tuning
The resonance frequency of resonator 2.
It should be understood that the application is to use tuned resonator 2 as equivalent tuning capacitance, therefore, tuned resonator 2 can
To replace the capacitor in conventional bulk acoustic wave filter chip circuit structure, it is directly integrated on chip, the application only provides one kind
Common bulk accoustic wave filter chip structure in actual use can be specifically electric according to bulk accoustic wave filter chip
Road connection relationship determines the connection relationship of 2 this equivalent capacity of tuned resonator, and this is no longer going to repeat them.
Bulk accoustic wave filter chip provided in this embodiment is passed through using resonator in the capacitance characteristic of disresonance frequency range
Be arranged resonance frequency be much smaller than or much larger than bulk acoustic wave resonator group 1 tuned resonator 2, the electricity for achieving capacitor is special
Property, it is not take up the size of package substrate, the capacitor that tuning is additionally set again is not needed on package substrate, substantially reduces filter
The package dimension of wave device chip.
Optionally, in some embodiments, bulk acoustic wave resonator group 1 contains at least two bulk acoustic wave resonator 11, each
Bulk acoustic wave resonator 11 presses default topological structure connection, and the resonance frequency of all bulk acoustic wave resonators 11 is within a preset range.
It should be understood that preset range can be arranged according to actual needs, guarantee the resonance frequency of all bulk acoustic wave resonators 11
It is close.
It should be noted that default topological structure can be arranged according to actual needs.
For example, can be by these bulk acoustic wave resonators 11 by ladder type topology arrangement, i.e. part bulk acoustic wave resonator 11
It is arranged in a row and joins end to end, and be connected respectively with the pad 3 for input and the pad 3 for output at head and the tail both ends, separately
One end of a part of resonator 11 is connect with adjacent tuned resonator 2 respectively, and the other end is connected with the pad 3 for ground connection.
Optionally, in some embodiments, the film thickness of any tuned resonator 2 is greater than any bulk acoustic wave resonator 11
Film thickness.
It should be understood that the film thickness between each tuned resonator 2 may be the same or different, it can be according to reality
Demand setting.
Similarly, bulk acoustic wave resonator 11 is also in this way, repeating no more.
Optionally, in some embodiments, the metal electrode thickness of any tuned resonator 2 is greater than any bulk acoustic resonance
The metal electrode thickness of device 11.
Optionally, in some embodiments, the piezoelectric material thickness of any tuned resonator 2 is greater than any bulk acoustic resonance
The piezoelectric material thickness of device 11.
Optionally, in some embodiments, the film thickness of any tuned resonator 2 is less than any bulk acoustic wave resonator 11
Film thickness.
Optionally, in some embodiments, the metal electrode thickness of any tuned resonator 2 is less than any bulk acoustic resonance
The metal electrode thickness of device 11.
Optionally, in some embodiments, the piezoelectric material thickness of any tuned resonator 2 is less than any bulk acoustic resonance
The piezoelectric material thickness of device 11.It should be noted that the upper layer and lower layer of resonator are metal electrode layer, middle layer is piezoresistive material
Material, the resonance frequency of resonator is related to the thickness of resonator film, and the film of resonator is thicker, and resonance frequency is lower；It is humorous
The film of vibration device is thinner, and resonance frequency is higher.Therefore, can be by increaseing or decreasing the thickness of metal electrode layer, it can also be with
The thickness of intermediate laminate electric material is increasedd or decreased, metal electrode layer and intermediate laminate electric material can also be increasedd or decreased simultaneously
Thickness.
It is appreciated that in some embodiments, may include such as structure some or all of in the various embodiments described above.
As shown in Fig. 2, for the structural schematic diagram that provides of other embodiments of bulk accoustic wave filter chip of the present invention, in this reality
Shi Zhong is illustrated by taking 1 bulk acoustic wave resonator 11 of pad 3,5 of tuned resonator 2,3 as an example.
The bulk accoustic wave filter chip includes: 5 bulk acoustic wave resonators, 11,1 tuned resonators 2, input pad 31, defeated
Pad 32 and ground pad 33 out, bulk acoustic wave resonator 11, tuned resonator 2, input pad 31, o pads 32 and ground connection weldering
Disk 33 is all located on filter chip.
The shared two rows of 5 bulk acoustic wave resonators 11, upper isostere acoustic resonator 11 have 3, lower isostere acoustic resonator 11
There are 2, upper isostere acoustic resonator 11 is sequentially connected, and one end of lower 2 bulk acoustic wave resonators 11 of row is adjacent with upper row respectively
Two bulk acoustic wave resonators 11 connect, and the other end is connect with ground pad 33.
Input pad 31 is connect with external circuit, and input pad 31 is connect with above ranked first a bulk acoustic wave resonator 11, is adjusted
One end of humorous resonator 2 ranked first a bulk acoustic wave resonator 11 with input pad 31 and above respectively and connect, and the other end is respectively under
Ranked first bulk acoustic wave resonator 11 and ground pad 33 connect, under ranked first a bulk acoustic wave resonator 11 respectively with above ranked first
A bulk acoustic wave resonator 11, on ranked second bulk acoustic wave resonator 11 and ground pad 33 connects, under to ranked second a bulk acoustic wave humorous
Vibration device 11 respectively with above ranked second bulk acoustic wave resonator 11, on ranked third a bulk acoustic wave resonator 11 and ground pad 33 connects
It connects, above ranked third a bulk acoustic wave resonator 11 and connect with o pads 32.
If increasing bulk acoustic wave resonator 11, a bulk acoustic resonance ranked third upper according to existing connection relationship
After device 11, and under ranked second and continue growing after bulk acoustic wave resonator 11.
Reader should be understood that in the description of this specification reference term " one embodiment ", " is shown " some embodiments "
The description of example ", " specific example " or " some examples " etc. mean specific features described in conjunction with this embodiment or example, structure,
Material or feature are included at least one embodiment or example of the invention.In the present specification, above-mentioned term is shown
The statement of meaning property need not be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described
It may be combined in any suitable manner in any one or more of the embodiments or examples.In addition, without conflicting with each other, this
The technical staff in field can be by the spy of different embodiments or examples described in this specification and different embodiments or examples
Sign is combined.
It is apparent to those skilled in the art that for convenience of description and succinctly, the dress of foregoing description
The specific work process with unit is set, can refer to corresponding processes in the foregoing method embodiment, details are not described herein.
In several embodiments provided herein, it should be understood that disclosed device and method can pass through it
Its mode is realized.For example, the apparatus embodiments described above are merely exemplary, for example, the division of unit, only
A kind of logical function partition, there may be another division manner in actual implementation, for example, multiple units or components can combine or
Person is desirably integrated into another system, or some features can be ignored or not executed.
Unit may or may not be physically separated as illustrated by the separation member, shown as a unit
Component may or may not be physical unit, it can and it is in one place, or may be distributed over multiple networks
On unit.It can select some or all of unit therein according to the actual needs to realize the mesh of the embodiment of the present invention
's.
More than, only a specific embodiment of the invention, but scope of protection of the present invention is not limited thereto, and it is any to be familiar with
Those skilled in the art in the technical scope disclosed by the present invention, can readily occur in various equivalent modifications or substitutions,
These modifications or substitutions should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be wanted with right
Subject to the protection scope asked.
Claims (8)
1. a kind of bulk accoustic wave filter chip characterized by comprising bulk acoustic wave resonator group, at least one tuned resonator
With at least three pads, the bulk acoustic wave resonator group is connect with each tuned resonator, each pad respectively, often
A tuned resonator is connect with the bulk acoustic wave resonator group, or respectively with the bulk acoustic wave resonator group and any described
Pad connection, each tuned resonator resonance frequency are respectively less than or are greater than any bulk acoustic wave in the bulk acoustic wave resonator group
The resonance frequency of resonator.
2. bulk accoustic wave filter chip according to claim 1, which is characterized in that the bulk acoustic wave resonator group includes extremely
Few two bulk acoustic wave resonators, each bulk acoustic wave resonator presses default topological structure connection, and all bulk acoustic waves are humorous
The resonance frequency of vibration device is within a preset range.
3. bulk accoustic wave filter chip according to claim 2, which is characterized in that the film of any tuned resonator
Thickness is greater than the film thickness of any bulk acoustic wave resonator.
4. bulk accoustic wave filter chip according to claim 3, which is characterized in that the metal of any tuned resonator
Thickness of electrode is greater than the metal electrode thickness of any bulk acoustic wave resonator.
5. bulk accoustic wave filter chip according to claim 3, which is characterized in that the piezoelectricity of any tuned resonator
Material thickness is greater than the piezoelectric material thickness of any bulk acoustic wave resonator.
6. bulk accoustic wave filter chip according to claim 2, which is characterized in that the film of any tuned resonator
Thickness is less than the film thickness of any bulk acoustic wave resonator.
7. bulk accoustic wave filter chip according to claim 6, which is characterized in that the metal of any tuned resonator
Thickness of electrode is less than the metal electrode thickness of any bulk acoustic wave resonator.
8. bulk accoustic wave filter chip according to claim 6, which is characterized in that the piezoelectricity of any tuned resonator
Material thickness is less than the piezoelectric material thickness of any bulk acoustic wave resonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811444995.5A CN109194301A (en) | 2018-11-29 | 2018-11-29 | A kind of bulk accoustic wave filter chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811444995.5A CN109194301A (en) | 2018-11-29 | 2018-11-29 | A kind of bulk accoustic wave filter chip |
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| CN109194301A true CN109194301A (en) | 2019-01-11 |
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| CN201811444995.5A Pending CN109194301A (en) | 2018-11-29 | 2018-11-29 | A kind of bulk accoustic wave filter chip |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020140520A1 (en) * | 2001-03-30 | 2002-10-03 | Hitachi Media Electronics Co., Ltd. | Radio frequency fliter, radio frequency circuit, antenna duplexer and radio terminal |
| CN101795118A (en) * | 2009-01-30 | 2010-08-04 | 富士通株式会社 | High frequency device, filter, duplexer, communication module, and communication apparatus |
| CN104980122A (en) * | 2014-04-10 | 2015-10-14 | 太阳诱电株式会社 | Multiplexer |
| CN107306120A (en) * | 2016-04-25 | 2017-10-31 | 英飞凌科技股份有限公司 | Tunable resonator element, filter circuit and method |
-
2018
- 2018-11-29 CN CN201811444995.5A patent/CN109194301A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020140520A1 (en) * | 2001-03-30 | 2002-10-03 | Hitachi Media Electronics Co., Ltd. | Radio frequency fliter, radio frequency circuit, antenna duplexer and radio terminal |
| CN101795118A (en) * | 2009-01-30 | 2010-08-04 | 富士通株式会社 | High frequency device, filter, duplexer, communication module, and communication apparatus |
| CN104980122A (en) * | 2014-04-10 | 2015-10-14 | 太阳诱电株式会社 | Multiplexer |
| CN107306120A (en) * | 2016-04-25 | 2017-10-31 | 英飞凌科技股份有限公司 | Tunable resonator element, filter circuit and method |
Non-Patent Citations (2)
| Title |
|---|
| 张亚非，陈达: "《薄膜体声波谐振器的原理、设计与应用》", 31 January 2011, 上海交通大学出版社 * |
| 高杨，蔡洵，贺学锋: "体声波滤波器的设计与微加工方法", 《压电与声光》 * |
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Application publication date: 20190111 |
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