CN109192886B - Display substrate, manufacturing method thereof, display panel and display device - Google Patents
Display substrate, manufacturing method thereof, display panel and display device Download PDFInfo
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- CN109192886B CN109192886B CN201811031834.3A CN201811031834A CN109192886B CN 109192886 B CN109192886 B CN 109192886B CN 201811031834 A CN201811031834 A CN 201811031834A CN 109192886 B CN109192886 B CN 109192886B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a display substrate, a manufacturing method of the display substrate, a display panel and a display device, and relates to the technical field of display. The invention forms an anode on a substrate through a composition process, forms an inorganic insulating layer covering the anode, forms a pixel definition layer on the inorganic insulating layer through the composition process, and removes the inorganic insulating layer on the anode in the opening area of the pixel definition layer, wherein the orthographic projection of the opening area of the pixel definition layer on the anode is positioned in the area where the anode is positioned. After the anode is formed, an inorganic insulating layer is formed, a pixel defining layer is formed on the inorganic insulating layer, the pixel defining layer is used as a mask, the inorganic insulating layer on the anode in an opening area of the pixel defining layer is removed, and when the inorganic insulating layer is removed, particles generated on the inorganic insulating layer in the process of forming the pixel defining layer are removed together with the inorganic insulating layer, so that the number of the particles on the anode is reduced, and the yield of the display substrate is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display substrate, a manufacturing method of the display substrate, a display panel and a display device.
Background
An Organic Light Emitting Diode (OLED) has many advantages of active Light emission, high brightness, high contrast, ultra-thin, low power consumption, flexibility, and wide operating temperature range, and has become a next generation display technology with great competitiveness and development prospect.
After the OLED display panel is manufactured, the OLED display panel usually needs to be tested and reliability evaluated, but in the testing and reliability evaluation process, a large number of black spots are generated in the OLED display panel, and the black spots have a sign of obviously expanding with the increase of the testing time.
The reason for this is mainly that after PDL (Pixel Definition Layer) is fabricated on the anode, a large number of particles may exist on the anode, and water vapor may enter the light-emitting Layer from the position of the particle, so that the OLED device fails, i.e., black dots are generated, and as time is prolonged, the amount of the water vapor intruding increases, and the number of the black dots also continuously increases, resulting in a decrease in yield.
Disclosure of Invention
The invention provides a display substrate, a manufacturing method thereof, a display panel and a display device, and aims to solve the problem that the yield is reduced due to the fact that the number of particles on an anode is large.
In order to solve the above problems, the present invention discloses a method for manufacturing a display substrate, comprising:
forming an anode on a substrate through a patterning process;
forming an inorganic insulating layer covering the anode;
forming a pixel defining layer on the inorganic insulating layer through a composition process, wherein the orthographic projection of an opening region of the pixel defining layer on the anode is positioned in a region where the anode is positioned;
removing the inorganic insulating layer on the anode electrode in an opening region of the pixel defining layer.
Preferably, the inorganic insulating layer on the anode electrode in the opening region of the pixel defining layer is removed using a wet etching process.
Preferably, the inorganic insulating layer is formed using a plasma enhanced chemical vapor deposition process.
Preferably, the manufacturing method further comprises:
a light emitting layer and a cathode are sequentially formed on the anode in the opening area of the pixel defining layer.
In order to solve the above problem, the present invention also discloses a display substrate, comprising:
a substrate;
an anode formed on the substrate;
an inorganic insulating layer formed on the anode;
a pixel defining layer formed on the inorganic insulating layer;
wherein, the orthographic projection of the opening region of the pixel definition layer on the anode is positioned in the region where the anode is positioned, and the orthographic projection of the opening region of the pixel definition layer on the anode is not overlapped with the orthographic projection of the inorganic insulating layer on the anode.
Preferably, the material of the inorganic insulating layer is aluminum oxide, silicon nitride, or silicon oxide.
Preferably, the inorganic insulating layer has a thickness of
To
Preferably, the display substrate further includes:
a light emitting layer and a cathode electrode formed on the anode electrode in an opening region of the pixel defining layer; wherein the light emitting layer is adjacent to the anode.
In order to solve the above problem, the present invention further discloses a display panel including the above display substrate.
In order to solve the above problem, the present invention further discloses a display device including the above display panel.
Compared with the prior art, the invention has the following advantages:
the method comprises the steps of forming an anode on a substrate through a composition process, forming an inorganic insulating layer covering the anode, forming a pixel defining layer on the inorganic insulating layer through the composition process, wherein the orthographic projection of an opening area of the pixel defining layer on the anode is located in an area where the anode is located, and removing the inorganic insulating layer on the anode located in the opening area of the pixel defining layer. After the anode is formed, an inorganic insulating layer is formed, a pixel defining layer is formed on the inorganic insulating layer, the pixel defining layer is used as a mask, the inorganic insulating layer on the anode in an opening area of the pixel defining layer is removed, and when the inorganic insulating layer is removed, particles generated on the inorganic insulating layer in the process of forming the pixel defining layer are removed together with the inorganic insulating layer, so that the number of the particles on the anode is reduced, and the yield of the display substrate is improved.
Drawings
Fig. 1 is a flowchart illustrating a method of fabricating a display substrate according to an embodiment of the invention;
FIG. 2 is a schematic diagram showing a structure after an anode is formed on a substrate in an embodiment of the present invention;
FIG. 3 is a schematic view showing a structure after forming an inorganic insulating layer in an embodiment of the present invention;
FIG. 4 is a schematic structural view showing a pixel defining layer formed on an inorganic insulating layer according to an embodiment of the present invention;
FIG. 5 is a schematic view showing a structure after removing an inorganic insulating layer on an anode electrode in an opening region of a pixel defining layer in the embodiment of the present invention;
FIG. 6 is a schematic structural view showing particles generated on the inorganic insulating layer after the formation of the pixel define layer in the embodiment of the present invention;
fig. 7 is a schematic structural diagram showing that after the inorganic insulating layer on the anode is removed, the particles generated on the inorganic insulating layer are also removed in the embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example one
Referring to fig. 1, a flowchart of a method for manufacturing a display substrate according to an embodiment of the present invention is shown, which may specifically include the following steps:
in step 101, an anode is formed on a substrate by a patterning process.
In the embodiment of the present invention, as shown in fig. 2, the anode 22 is formed on the substrate 21 through a patterning process, specifically, an anode film is deposited on the substrate 21, and the anode film is patterned to obtain the anode 22.
The anode 22 may be a single-layer structure made of ITO (Indium Tin Oxide), and the anode 22 may also be a stacked structure made of ITO/Ag/ITO.
It should be noted that a thin film transistor is further formed between the substrate 21 and the anode 22, and the thin film transistor includes a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source electrode, a drain electrode, a passivation layer, and a flat layer, where the buffer layer is deposited on the substrate 21 by using a PECVD (Plasma Enhanced Chemical Vapor Deposition) method or other Deposition methods, the active layer is formed on the buffer layer by a patterning process, the gate insulating layer and the gate electrode are sequentially formed on the active layer by the patterning process, an interlayer dielectric layer is formed by the patterning process, the source electrode and the drain electrode are formed on the interlayer dielectric layer by the patterning process, the passivation layer is deposited by using the PECVD or other Deposition methods, the flat layer is formed on the passivation layer, and the anode 22 is formed on the flat layer by the patterning process.
Wherein, the material of the active layer may be IGZO (Indium Gallium Zinc Oxide), ZnON (Zinc oxynitride), IZTO (Indium Zinc Tin Oxide), a-Si (Amorphous Silicon), p-Si (Poly Silicon), hexathiophene, polythiophene, etc.; the material of the buffer layer, the gate insulating layer, the interlayer insulating layer, and the passivation layer may be silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (AlOx), hafnium oxide (HfOx), tantalum oxide (TaOx), or the like; the gate electrode, the source electrode and the drain electrode can be made of metal materials, such as silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), MoNb/Cu/MoNb, and the like, can also be made of metal alloy materials, such as aluminum neodymium alloy (AlNd), molybdenum niobium alloy (MoNb), and the like, and can also be made of materials corresponding to a stack structure formed by metal and transparent conductive oxide, such as ITO/Ag/ITO; the material of the planarization layer can be a material having a planarization effect, such as a polysiloxane-based material, an acrylic-based material, or a polyimide-based material.
It should be noted that the patterning process in the embodiment of the present invention generally includes processes such as photoresist coating, exposure, development, etching, and the like.
In the embodiment of the present invention, as shown in fig. 3, after the anode 22 is formed, an inorganic insulating layer 23 is deposited, and the inorganic insulating layer 23 covers the anode 22.
Wherein the inorganic insulating layer 23 is formed by plasma enhanced chemical vapor deposition, the material of the inorganic insulating layer 23 is alumina, silicon nitride or silicon oxide, and the material of the inorganic insulating layer 23Has a thickness of
To
In the embodiment of the present invention, as shown in fig. 4, a pixel defining layer 24 is formed on the inorganic insulating layer 23 through a patterning process, and an orthographic projection of an opening region M of the pixel defining layer on the anode 22 is located in a region where the anode 22 is located.
Specifically, a pixel defining layer 24 material is coated on the inorganic insulating layer 23 to form a pixel defining layer film, and the pixel defining layer film is exposed by using a mask and then developed, so that the pixel defining layer film in the opening region M is removed, thereby obtaining the pixel defining layer 24.
And 104, removing the inorganic insulating layer on the anode in the opening area of the pixel definition layer.
In the embodiment of the present invention, as shown in fig. 5, the inorganic insulating layer 23 on the anode 22 in the opening region M of the pixel defining layer 24 is removed using the pixel defining layer 24 as a mask.
Referring to fig. 6, a schematic structural diagram illustrating particles generated on the inorganic insulating layer after the pixel defining layer is formed in the embodiment of the present invention is shown, and fig. 7 is a schematic structural diagram illustrating that the particles generated on the inorganic insulating layer are also removed after the inorganic insulating layer on the anode is removed in the embodiment of the present invention.
As shown in fig. 6, in the process of forming the pixel defining layer 24 on the inorganic insulating layer 23 by the patterning process, particles P may be generated on the inorganic insulating layer 23, and as shown in fig. 7, while removing the inorganic insulating layer 23 on the anode 22 in the opening region M of the pixel defining layer 24 by using the pixel defining layer 24 as a mask, the particles P generated on the inorganic insulating layer 23 may be removed together with the inorganic insulating layer 23, thereby reducing the amount of particles on the anode 22; when the amount of the particles on the anode 22 is reduced, the moisture is not easy to enter the light-emitting layer, and the probability of generating black spots is greatly reduced, thereby improving the yield of the display substrate.
Preferably, the inorganic insulating layer 23 on the anode 22 positioned in the opening area M of the pixel defining layer 24 is removed using a wet etching process.
If the dry etching process is used to remove the inorganic insulating layer 23 on the anode 22 in the opening region M of the pixel defining layer 24, the plasma used in the dry etching process will bombard the particles P on the inorganic insulating layer 23 to other positions, which still will affect the yield, therefore, the embodiment of the present invention preferably uses the wet etching process to etch the inorganic insulating layer 23 on the anode 22 in the opening region M of the pixel defining layer 24, and the particles P on the inorganic insulating layer 23 are also removed by increasing the over-etching amount by a proper amount during etching.
It should be noted that the over-etching amount can be increased by increasing the etching time or increasing the concentration of the etching solution, and the etching time and the concentration of the etching solution in the embodiment of the present invention are related to the thickness of the inorganic insulating layer 23 and the material used for the anode 22.
When the thickness of the inorganic insulating layer 23 is larger, the longer the etching time is, the higher the concentration of the etching solution is, and when the thickness of the inorganic insulating layer 23 is smaller, the shorter the etching time is, the lower the concentration of the etching solution is; the material used for the anode 22 may react with the etching solution, and when the inorganic insulating layer 23 is etched, the material used for the anode 22 may affect the anode 22, and the material used for the anode 22 may not react with the etching solution, and when the inorganic insulating layer 23 is etched, the material used for the anode 22 may not affect the anode 22, therefore, when the influence of the etching solution on the anode 22 is larger, the etching time is shorter, the concentration of the etching solution is lower, and when the influence of the etching solution on the anode 22 is smaller, the etching time is longer, and the concentration of the etching solution is higher.
After step 104, further comprising: a light emitting layer and a cathode are sequentially formed on the anode in the opening area of the pixel defining layer.
In the embodiment of the present invention, after removing the inorganic insulating layer 23 on the anode 22 in the opening region M of the pixel defining layer 24, a light emitting layer is formed on the anode 22 in the opening region M of the pixel defining layer 24, and the light emitting layer may be formed by evaporation or printing, and finally a cathode is formed on the light emitting layer, where the cathode may be made of a metal material such as silver, aluminum, or the like.
The addition of the inorganic insulating layer 23 between the pixel defining layer 24 and the anode 22 can reduce the leakage between the anode 22 and the cathode, and improve the leakage of the display substrate.
In the embodiment of the invention, the anode is formed on the substrate through a composition process, the inorganic insulating layer covering the anode is formed, the pixel defining layer is formed on the inorganic insulating layer through the composition process, the orthographic projection of the opening area of the pixel defining layer on the anode is positioned in the area where the anode is positioned, and the inorganic insulating layer on the anode positioned in the opening area of the pixel defining layer is removed. After the anode is formed, an inorganic insulating layer is formed, a pixel defining layer is formed on the inorganic insulating layer, the pixel defining layer is used as a mask, the inorganic insulating layer on the anode in an opening area of the pixel defining layer is removed, and when the inorganic insulating layer is removed, particles generated on the inorganic insulating layer in the process of forming the pixel defining layer are removed together with the inorganic insulating layer, so that the number of the particles on the anode is reduced, and the yield of the display substrate is improved.
Example two
An embodiment of the present invention provides a display substrate, including: a substrate 21, an anode 22 formed on the substrate 21, an inorganic insulating layer 23 formed on the anode 22, and a pixel defining layer 24 formed on the inorganic insulating layer 23.
Wherein, the orthographic projection of the opening region M of the pixel defining layer 24 on the anode 22 is located in the region of the anode 22, and the orthographic projection of the opening region M of the pixel defining layer 24 on the anode 22 is not overlapped with the orthographic projection of the inorganic insulating layer 23 on the anode 22.
That is, the inorganic insulating layer 23 is not disposed on the anode 22 in the opening region M of the pixel defining layer 24, and the inorganic insulating layer 23 on the anode 22 in the opening region M of the pixel defining layer 24 may be removed by a wet etching process.
Wherein, the material of the inorganic insulating layer 23 is aluminum oxide, silicon nitride or silicon oxide; the thickness of the inorganic insulating layer 23 is
To
In an embodiment of the present invention, the display substrate further includes: a light emitting layer and a cathode electrode formed on the anode electrode 22 in the opening region M of the pixel defining layer 24; wherein the light emitting layer is adjacent to the anode 22.
In an embodiment of the invention, the display substrate includes a substrate, an anode formed on the substrate, an inorganic insulating layer formed on the anode, and a pixel defining layer formed on the inorganic insulating layer, wherein an orthogonal projection of an opening region of the pixel defining layer on the anode is located in a region where the anode is located, and the orthogonal projection of the opening region of the pixel defining layer on the anode and the orthogonal projection of the inorganic insulating layer on the anode do not overlap. By removing the inorganic insulating layer on the anode in the opening area of the pixel definition layer, the particles generated on the inorganic insulating layer in the forming process of the pixel definition layer are removed along with the inorganic insulating layer while removing the inorganic insulating layer, so that the number of the particles on the anode is reduced, and the yield of the display substrate is improved.
EXAMPLE III
The embodiment of the invention provides a display panel, which comprises the display substrate.
Of course, the display panel further includes an opposing substrate, which may be a package cover plate or a color film substrate.
For specific description of the display substrate, reference may be made to the description of the first embodiment and the second embodiment, which is not repeated herein.
The embodiment of the invention also provides a display device which comprises the display panel, and the display panel can be a top-emission OLED display panel or a bottom-emission OLED display panel.
When the display panel is a top-emission OLED display panel, the anode 22 is a reflective anode, the cathode is made of a transparent metal material, the reflective anode reflects light emitted by the light-emitting layer to the cathode, and the light exits from the cathode; when the display panel is a bottom emission type OLED display panel, the anode is made of a transparent metal material, and light emitted by the light emitting layer is emitted from the anode.
In practical applications, the display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a navigator and the like.
In an embodiment of the present invention, a display panel includes a display substrate, the display substrate includes a substrate, an anode formed on the substrate, an inorganic insulating layer formed on the anode, and a pixel defining layer formed on the inorganic insulating layer, an orthogonal projection of an opening region of the pixel defining layer on the anode is located in a region where the anode is located, and an orthogonal projection of the opening region of the pixel defining layer on the anode and an orthogonal projection of the inorganic insulating layer on the anode do not overlap. By removing the inorganic insulating layer on the anode in the opening area of the pixel definition layer, the particles generated on the inorganic insulating layer in the forming process of the pixel definition layer are removed along with the inorganic insulating layer while removing the inorganic insulating layer, so that the number of the particles on the anode is reduced, and the yield of the display panel is improved.
For simplicity of explanation, the foregoing method embodiments are described as a series of acts or combinations, but it should be understood by those skilled in the art that the present invention is not limited by the order of acts or acts described, as some steps may occur in other orders or concurrently with other steps in accordance with the invention. Further, those skilled in the art should also appreciate that the embodiments described in the specification are preferred embodiments and that the acts and modules referred to are not necessarily required by the invention.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The display substrate, the manufacturing method thereof, the display panel and the display device provided by the invention are described in detail, and the principle and the implementation mode of the invention are explained by applying specific examples, and the description of the examples is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (7)
1. A method for manufacturing a display substrate is characterized by comprising the following steps:
forming an anode on a substrate through a patterning process;
forming an inorganic insulating layer covering the anode;
forming a pixel defining layer on the inorganic insulating layer through a composition process, wherein the orthographic projection of an opening region of the pixel defining layer on the anode is positioned in a region where the anode is positioned;
removing the inorganic insulating layer on the anode electrode in an opening region of the pixel defining layer;
sequentially forming a light emitting layer and a cathode on the anode in the opening region of the pixel defining layer;
removing the inorganic insulating layer on the anode in the opening area of the pixel defining layer by adopting a wet etching process;
and the etching amount corresponding to the wet etching process is larger than that of the inorganic insulating layer when no particulate matters exist on the inorganic insulating layer.
2. The method of claim 1, wherein the inorganic insulating layer is formed by a plasma enhanced chemical vapor deposition process.
3. A display substrate, comprising:
a substrate;
an anode formed on the substrate;
an inorganic insulating layer formed on the anode;
a pixel defining layer formed on the inorganic insulating layer;
wherein, the orthographic projection of the opening region of the pixel definition layer on the anode is positioned in the region of the anode, and the orthographic projection of the opening region of the pixel definition layer on the anode is not overlapped with the orthographic projection of the inorganic insulating layer on the anode;
a light emitting layer and a cathode electrode formed on the anode electrode in an opening region of the pixel defining layer; wherein the light emitting layer is adjacent to the anode;
wherein the inorganic insulating layer on the anode in the opening region of the pixel defining layer is removed by wet etching; and the etching amount corresponding to the wet etching process is larger than that of the inorganic insulating layer when no particulate matters exist on the inorganic insulating layer.
4. The display substrate according to claim 3, wherein the material of the inorganic insulating layer is aluminum oxide, silicon nitride, or silicon oxide.
5. The display substrate according to claim 3, wherein the inorganic insulating layer has a thickness of
To
6. A display panel comprising the display substrate according to any one of claims 3 to 5.
7. A display device characterized by comprising the display panel according to claim 6.
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| CN111987243B (en) * | 2020-08-11 | 2021-11-02 | Tcl华星光电技术有限公司 | Display panel manufacturing method and display panel |
| CN112420946A (en) * | 2020-11-12 | 2021-02-26 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN114335118B (en) * | 2021-12-30 | 2024-12-20 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN115274710A (en) * | 2022-08-10 | 2022-11-01 | 京东方科技集团股份有限公司 | A display module and its preparation method |
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