CN109192797A - A kind of photovoltaic cell and preparation method thereof with V-groove - Google Patents
A kind of photovoltaic cell and preparation method thereof with V-groove Download PDFInfo
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- CN109192797A CN109192797A CN201811033465.1A CN201811033465A CN109192797A CN 109192797 A CN109192797 A CN 109192797A CN 201811033465 A CN201811033465 A CN 201811033465A CN 109192797 A CN109192797 A CN 109192797A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 100
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 235000008216 herbs Nutrition 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 6
- 210000002268 wool Anatomy 0.000 abstract description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 20
- 241000209094 Oryza Species 0.000 description 5
- 235000007164 Oryza sativa Nutrition 0.000 description 5
- 235000009566 rice Nutrition 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000003208 petroleum Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention relates to a kind of photovoltaic cell and preparation method thereof with V-groove, the preparation method is the following steps are included: carry out two-sided making herbs into wool processing to the n type single crystal silicon piece；Then multiple corresponding first V-shaped grooves and the second V-shaped groove arranged in parallel are respectively formed in the upper and lower surface of the N monocrystalline silicon piece, respectively deposit an alumina flake in the upper and lower surfaces of the n type single crystal silicon piece；Corresponding amorphous silicon layer, transparency conducting layer and electrode are sequentially depositing in the upper and lower surface of the n type single crystal silicon piece.The structure novel and photoelectric conversion efficiency of photovoltaic cell of the invention are excellent.
Description
Technical field
The present invention relates to photovoltaic cell technical fields, more particularly to a kind of photovoltaic cell with V-groove and its preparation
Method.
Background technique
With the continuous development of human society, the demand to energy such as petroleum, coals is also sharply increased.However it is tellurian
Total reserves of the energy such as petroleum, coal are limited, and are non-renewable energy resources, thus the whole world is faced with severe energy shape
Gesture.The only large-scale use of renewable energy could promote the sustainable development of human society to substitute traditional fossil energy.
In recent years, the novel renewable energies such as solar energy, wind energy and underground heat cause the attention of people.With it is traditional prevailing
The energy such as petroleum, coal are compared, and the maximum advantage of solar energy is that its is inexhaustible, and in use
The ecological balance, pollution environment will not be destroyed.Therefore, solar energy is a kind of environmental-friendly green regenerative energy sources.And photovoltaic electric
Pond is a kind of semiconductor devices that the luminous energy of the sun can be converted to electric energy, under illumination condition, inside solar energy battery meeting
Photogenerated current is generated, and can be by electrode by power output.The structure of photovoltaic cell is to influence the pass of its photoelectric conversion efficiency
How key factor optimizes the structure of improvement photovoltaic cell to improve the photoelectric conversion efficiency of photovoltaic cell, this is that industry is closed extensively
The problem of note.
Summary of the invention
The purpose of the present invention is overcoming above-mentioned the deficiencies in the prior art, provide a kind of photovoltaic cell with V-groove and its
Preparation method.
To achieve the above object, the technical solution adopted by the present invention is that:
A kind of preparation method of the photovoltaic cell with V-groove, comprising the following steps:
1) a n type single crystal silicon piece is provided, two-sided making herbs into wool processing is carried out to the monocrystalline silicon piece, in the upper of the monocrystalline silicon piece
Surface and lower surface are respectively formed flannelette layer；
2) multiple first V-shaped grooves arranged in parallel then are formed in the upper surface of the N monocrystalline silicon piece, in the monocrystalline silicon
The lower surface of piece forms multiple second V-shaped grooves arranged in parallel, the depth of first V-shaped groove and the n type single crystal silicon piece
The ratio of thickness is 0.65-0.75, and the depth of second strip groove and the ratio of the thickness of the n type single crystal silicon piece are
0.65-0.75, multiple first V-shaped grooves and multiple second V-shaped grooves correspond respectively, and the one of first V-shaped groove
A side is parallel with a side of corresponding second V-shaped groove, first V-shaped groove and corresponding second V-shaped groove
Between monocrystalline silicon layer with a thickness of 40-60 microns；
3) alumina flake is respectively deposited in the upper and lower surfaces of the N monocrystalline silicon piece；
4) the first intrinsic amorphous silicon layer and P-type non-crystalline silicon then are sequentially depositing in the upper surface of the n type single crystal silicon piece
Layer,；
5) the second intrinsic amorphous silicon layer and N-type non-crystalline silicon layer then are sequentially depositing in the lower surface of the n type single crystal silicon piece；
6) the first transparency conducting layer then is deposited in the upper surface of the n type single crystal silicon piece；
7) the second transparency conducting layer then is deposited in the lower surface of the n type single crystal silicon piece；
8) front electrode then is formed in the upper surface of the n type single crystal silicon piece；
9) rear electrode then is formed in the lower surface of the n type single crystal silicon piece.
Preferably, the width of first V-shaped groove and second V-shaped groove is 1-2 in the step (2)
Millimeter, 1-2 millimeters of spacing of adjacent first V-shaped groove, the spacing of adjacent second V-shaped groove is 1-2 millimeters.
Preferably, in the step (3), the alumina flake with a thickness of 0.5-1.5 nanometers.
Preferably, in the step (4), first intrinsic amorphous silicon layer with a thickness of 3-6 nanometers, the p-type
Amorphous silicon layer with a thickness of 5-8 nanometers.
Preferably, in the step (5), second intrinsic amorphous silicon layer with a thickness of 7-10 nanometers, the N-type
Amorphous silicon layer with a thickness of 7-10 nanometers.
Preferably, stating the first transparency conducting layer in the step (6) and (7) and second transparency conducting layer being equal
ITO layer, thin metal layer including stacking, AZO layers, graphene layer and ITO layer, first transparency conducting layer and described second
Transparency conducting layer with a thickness of 400-500 nanometers.
Preferably, the front electrode is located in first V-shaped groove in the step (8)；In the step
(9) in, the rear electrode is located in second V-shaped groove.
The present invention also proposes a kind of photovoltaic cell with V-groove, uses the above method to prepare to be formed.
Compared with the prior art, the invention has the following advantages:
In photovoltaic cell with V-groove of the invention, by the way that corresponding first V-shaped groove and the second V-shaped groove is arranged, and
Ratio by the way that the depth of first, second V-shaped groove and the thickness of the n type single crystal silicon piece is arranged is 0.65-0.75, is had
Effect increases the area of the monocrystalline silicon layer between the first V-shaped groove and corresponding second V-shaped groove, and then increases hetero-junctions
Contact area.By largely test so that between first V-shaped groove and corresponding second V-shaped groove monocrystalline silicon layer thickness
Degree is 40-60 micron, effectively shortens transmission range of the electronics in monocrystalline silicon piece, so that the photoelectricity turn of corresponding photovoltaic cell
Efficiency is changed to obviously increase.By advanced optimizing the width of the first, second V-shaped groove and the thickness, transparent of spacing, each amorphous silicon layer
The material and thickness of conductive layer and the material and thickness of electrode, so that the photoelectricity of the photovoltaic cell with V-groove of the invention
Transfer efficiency is optimal.The manufacturing method of the present invention is simple and easy and compatible with existing preparation process simultaneously, convenient for industry
Metaplasia produces.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the photovoltaic cell with V-groove of the invention.
Specific embodiment
The present invention proposes a kind of preparation method of photovoltaic cell with V-groove, comprising the following steps: 1) provides a N-type
Monocrystalline silicon piece carries out two-sided making herbs into wool processing to the monocrystalline silicon piece, is respectively formed in the upper and lower surfaces of the monocrystalline silicon piece
Flannelette layer；2) multiple first V-shaped grooves arranged in parallel then are formed in the upper surface of the N monocrystalline silicon piece, in the monocrystalline silicon
The lower surface of piece forms multiple second V-shaped grooves arranged in parallel, the depth of first V-shaped groove and the n type single crystal silicon piece
The ratio of thickness is 0.65-0.75, and the depth of second strip groove and the ratio of the thickness of the n type single crystal silicon piece are
0.65-0.75, multiple first V-shaped grooves and multiple second V-shaped grooves correspond respectively, and the one of first V-shaped groove
A side is parallel with a side of corresponding second V-shaped groove, first V-shaped groove and corresponding second V-shaped groove
Between monocrystalline silicon layer with a thickness of 40-60 microns；3) aluminium oxide is respectively deposited in the upper and lower surfaces of the N monocrystalline silicon piece
Thin layer；4) the first intrinsic amorphous silicon layer and P-type non-crystalline silicon layer then are sequentially depositing in the upper surface of the n type single crystal silicon piece, 5)
Then the second intrinsic amorphous silicon layer and N-type non-crystalline silicon layer are sequentially depositing in the lower surface of the n type single crystal silicon piece；6) then in institute
The upper surface for stating n type single crystal silicon piece deposits the first transparency conducting layer；7) then in the lower surface of n type single crystal silicon piece deposition the
Two transparency conducting layers；8) front electrode then is formed in the upper surface of the n type single crystal silicon piece；9) then in the N-type monocrystalline
The lower surface of silicon wafer forms rear electrode.
Wherein, in the step (2), the width of first V-shaped groove and second V-shaped groove is 1-2 millimeters,
1-2 millimeters of spacing of adjacent first V-shaped groove, the spacing of adjacent second V-shaped groove are 1-2 millimeters.In the step (3)
In, the alumina flake with a thickness of 0.5-1.5 nanometers.In the step (4), the thickness of first intrinsic amorphous silicon layer
Degree be 3-6 nanometers, the P-type non-crystalline silicon layer with a thickness of 5-8 nanometers.In the step (5), second intrinsic amorphous silicon
Layer with a thickness of 7-10 nanometers, the N-type non-crystalline silicon layer with a thickness of 7-10 nanometers.In the step (6) and (7), is stated
One transparency conducting layer and second transparency conducting layer include the ITO layer of stacking, thin metal layer, AZO layers, graphene layer and
ITO layer, first transparency conducting layer and second transparency conducting layer with a thickness of 400-500 nanometers.In the step (8)
In, the front electrode is located in first V-shaped groove；In the step (9), the rear electrode is located at the 2nd V
In shape slot.
As shown in Figure 1, the present invention proposes a kind of photovoltaic cell with V-groove, the photovoltaic cell with V-groove from
Up to lower including from top to bottom including front electrode 1, the first transparency conducting layer 2, P-type non-crystalline silicon layer 3, the first intrinsic amorphous silicon layer
4, alumina flake (not shown), n type single crystal silicon piece 5, alumina flake (not shown), the second intrinsic amorphous silicon layer 6, N-type are non-
Crystal silicon layer 7, the second transparency conducting layer 8 and rear electrode 9, wherein the first transparency conducting layer 2, P-type non-crystalline silicon layer 3, first
Sign amorphous silicon layer 4, upper surface alumina flake in a part be located in the first V-shaped groove 51 of n type single crystal silicon piece 5, it is described
Front electrode 1 is located in first V-shaped groove 51, the alumina flake of lower surface, the second intrinsic amorphous silicon layer 6, N-type amorphous silicon
A part of the 7, second transparency conducting layer 8 of layer is located in the second V-shaped groove 52 of n type single crystal silicon piece 5, and the rear electrode 9 is located at
In second V-shaped groove 52.
Embodiment 1:
A kind of preparation method of the photovoltaic cell with V-groove, comprising the following steps: 1) a n type single crystal silicon piece is provided, it is right
The monocrystalline silicon piece carries out two-sided making herbs into wool processing, is respectively formed flannelette layer in the upper and lower surfaces of the monocrystalline silicon piece；2) it connects
Form multiple first V-shaped grooves arranged in parallel in the upper surface of the N monocrystalline silicon piece, in the lower surface shape of the monocrystalline silicon piece
At multiple second V-shaped grooves arranged in parallel, the depth of first V-shaped groove and the ratio of the thickness of the n type single crystal silicon piece are
0.7, the ratio of the thickness of the depth of second strip groove and the n type single crystal silicon piece is 0.7, multiple first V-arrangements
Slot and multiple second V-shaped grooves correspond respectively, a side of first V-shaped groove and corresponding second V-arrangement
One side of slot is parallel, and monocrystalline silicon layer is micro- with a thickness of 50 between first V-shaped groove and corresponding second V-shaped groove
Rice；3) alumina flake is respectively deposited in the upper and lower surfaces of the N monocrystalline silicon piece；4) then in the n type single crystal silicon
The upper surface of piece is sequentially depositing the first intrinsic amorphous silicon layer and P-type non-crystalline silicon layer, and 5) then in the following table of the n type single crystal silicon piece
Face is sequentially depositing the second intrinsic amorphous silicon layer and N-type non-crystalline silicon layer；6) then in the upper surface of n type single crystal silicon piece deposition the
One transparency conducting layer；7) the second transparency conducting layer then is deposited in the lower surface of the n type single crystal silicon piece；8) then in the N
The upper surface of type monocrystalline silicon piece forms front electrode；9) rear electrode then is formed in the lower surface of the n type single crystal silicon piece.
Wherein, in the step (2), the width of first V-shaped groove and second V-shaped groove is 1.5 millimeters,
1.5 millimeters of spacing of adjacent first V-shaped groove, the spacing of adjacent second V-shaped groove are 1.5 millimeters.In the step (3)
In, the alumina flake with a thickness of 1 nanometer.In the step (4), first intrinsic amorphous silicon layer with a thickness of 5
Nanometer, the P-type non-crystalline silicon layer with a thickness of 6 nanometers.In the step (5), the thickness of second intrinsic amorphous silicon layer
Be 8 nanometers, the N-type non-crystalline silicon layer with a thickness of 8 nanometers.In the step (6) and (7), state the first transparency conducting layer and
Second transparency conducting layer includes ITO layer, thin metal layer, AZO layers, graphene layer and the ITO layer of stacking, and described first
Transparency conducting layer and second transparency conducting layer with a thickness of 450 nanometers.In the step (8), the front electrode position
In first V-shaped groove；In the step (9), the rear electrode is located in second V-shaped groove.
The photoelectric conversion efficiency of the photovoltaic cell with V-groove is 24.8%.
Embodiment 2
A kind of preparation method of the photovoltaic cell with V-groove, comprising the following steps: 1) a n type single crystal silicon piece is provided, it is right
The monocrystalline silicon piece carries out two-sided making herbs into wool processing, is respectively formed flannelette layer in the upper and lower surfaces of the monocrystalline silicon piece；2) it connects
Form multiple first V-shaped grooves arranged in parallel in the upper surface of the N monocrystalline silicon piece, in the lower surface shape of the monocrystalline silicon piece
At multiple second V-shaped grooves arranged in parallel, the depth of first V-shaped groove and the ratio of the thickness of the n type single crystal silicon piece are
0.65, the ratio of the thickness of the depth of second strip groove and the n type single crystal silicon piece is 0.65, multiple first V
Shape slot and multiple second V-shaped grooves correspond respectively, a side of first V-shaped groove and corresponding 2nd V
One side of shape slot is parallel, and monocrystalline silicon layer is micro- with a thickness of 40 between first V-shaped groove and corresponding second V-shaped groove
Rice；3) alumina flake is respectively deposited in the upper and lower surfaces of the N monocrystalline silicon piece；4) then in the n type single crystal silicon
The upper surface of piece is sequentially depositing the first intrinsic amorphous silicon layer and P-type non-crystalline silicon layer, and 5) then in the following table of the n type single crystal silicon piece
Face is sequentially depositing the second intrinsic amorphous silicon layer and N-type non-crystalline silicon layer；6) then in the upper surface of n type single crystal silicon piece deposition the
One transparency conducting layer；7) the second transparency conducting layer then is deposited in the lower surface of the n type single crystal silicon piece；8) then in the N
The upper surface of type monocrystalline silicon piece forms front electrode；9) rear electrode then is formed in the lower surface of the n type single crystal silicon piece.
Wherein, in the step (2), the width of first V-shaped groove and second V-shaped groove is 1 millimeter, phase
1 millimeter of spacing of adjacent first V-shaped groove, the spacing of adjacent second V-shaped groove are 1 millimeter.In the step (3), institute
State alumina flake with a thickness of 0.5 nanometer.In the step (4), first intrinsic amorphous silicon layer is received with a thickness of 3
Rice, the P-type non-crystalline silicon layer with a thickness of 5 nanometers.In the step (5), second intrinsic amorphous silicon layer with a thickness of 7
Nanometer, the N-type non-crystalline silicon layer with a thickness of 7 nanometers.In the step (6) and (7), the first transparency conducting layer and described is stated
Second transparency conducting layer includes ITO layer, thin metal layer, AZO layers, graphene layer and the ITO layer of stacking, and described first is transparent
Conductive layer and second transparency conducting layer with a thickness of 400 nanometers.In the step (8), the front electrode is located at institute
It states in the first V-shaped groove；In the step (9), the rear electrode is located in second V-shaped groove.
The photoelectric conversion efficiency of the photovoltaic cell with V-groove is 24.3%.
Embodiment 3
A kind of preparation method of the photovoltaic cell with V-groove, comprising the following steps: 1) a n type single crystal silicon piece is provided, it is right
The monocrystalline silicon piece carries out two-sided making herbs into wool processing, is respectively formed flannelette layer in the upper and lower surfaces of the monocrystalline silicon piece；2) it connects
Form multiple first V-shaped grooves arranged in parallel in the upper surface of the N monocrystalline silicon piece, in the lower surface shape of the monocrystalline silicon piece
At multiple second V-shaped grooves arranged in parallel, the depth of first V-shaped groove and the ratio of the thickness of the n type single crystal silicon piece are
0.75, the ratio of the thickness of the depth of second strip groove and the n type single crystal silicon piece is 0.75, multiple first V
Shape slot and multiple second V-shaped grooves correspond respectively, a side of first V-shaped groove and corresponding 2nd V
One side of shape slot is parallel, and monocrystalline silicon layer is micro- with a thickness of 60 between first V-shaped groove and corresponding second V-shaped groove
Rice；3) alumina flake is respectively deposited in the upper and lower surfaces of the N monocrystalline silicon piece；4) then in the n type single crystal silicon
The upper surface of piece is sequentially depositing the first intrinsic amorphous silicon layer and P-type non-crystalline silicon layer, and 5) then in the following table of the n type single crystal silicon piece
Face is sequentially depositing the second intrinsic amorphous silicon layer and N-type non-crystalline silicon layer；6) then in the upper surface of n type single crystal silicon piece deposition the
One transparency conducting layer；7) the second transparency conducting layer then is deposited in the lower surface of the n type single crystal silicon piece；8) then in the N
The upper surface of type monocrystalline silicon piece forms front electrode；9) rear electrode then is formed in the lower surface of the n type single crystal silicon piece.
Wherein, in the step (2), the width of first V-shaped groove and second V-shaped groove is 2 millimeters, phase
2 millimeters of spacing of adjacent first V-shaped groove, the spacing of adjacent second V-shaped groove are 2 millimeters.In the step (3), institute
State alumina flake with a thickness of 1.5 nanometers.In the step (4), first intrinsic amorphous silicon layer is received with a thickness of 6
Rice, the P-type non-crystalline silicon layer with a thickness of 8 nanometers.In the step (5), second intrinsic amorphous silicon layer with a thickness of
10 nanometers, the N-type non-crystalline silicon layer with a thickness of 10 nanometers.In the step (6) and (7), state the first transparency conducting layer and
Second transparency conducting layer includes ITO layer, thin metal layer, AZO layers, graphene layer and the ITO layer of stacking, and described first
Transparency conducting layer and second transparency conducting layer with a thickness of 500 nanometers.In the step (8), the front electrode position
In first V-shaped groove；In the step (9), the rear electrode is located in second V-shaped groove.
The photoelectric conversion efficiency of the photovoltaic cell with V-groove is 23.9%.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (8)
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| US4335503A (en) * | 1980-12-24 | 1982-06-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of making a high voltage V-groove solar cell |
| JPH0745843A (en) * | 1993-06-29 | 1995-02-14 | Sharp Corp | Solar cell element |
| JPH11238893A (en) * | 1990-10-23 | 1999-08-31 | Canon Inc | Manufacture of solar cell |
| CN102522446A (en) * | 2011-12-30 | 2012-06-27 | 常州天合光能有限公司 | HIT solar cell structure and manufacturing method thereof |
| JP2013191714A (en) * | 2012-03-14 | 2013-09-26 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion device |
-
2018
- 2018-09-05 CN CN201811033465.1A patent/CN109192797A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0044396A2 (en) * | 1980-06-23 | 1982-01-27 | International Business Machines Corporation | Semiconductor solar energy converter |
| US4335503A (en) * | 1980-12-24 | 1982-06-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of making a high voltage V-groove solar cell |
| JPH11238893A (en) * | 1990-10-23 | 1999-08-31 | Canon Inc | Manufacture of solar cell |
| JPH0745843A (en) * | 1993-06-29 | 1995-02-14 | Sharp Corp | Solar cell element |
| CN102522446A (en) * | 2011-12-30 | 2012-06-27 | 常州天合光能有限公司 | HIT solar cell structure and manufacturing method thereof |
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Application publication date: 20190111 |