CN109154072A - Ion beam generation method and the ion beam illuminating method for using this method - Google Patents
Ion beam generation method and the ion beam illuminating method for using this method Download PDFInfo
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- CN109154072A CN109154072A CN201780023782.2A CN201780023782A CN109154072A CN 109154072 A CN109154072 A CN 109154072A CN 201780023782 A CN201780023782 A CN 201780023782A CN 109154072 A CN109154072 A CN 109154072A
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
The present invention provide it is a kind of can be than increasing the ion beam generation method of the beam current value of ion beam in the past.Ion beam generation method of the invention is to generate the ion beam containing carbon and hydrogen in constitution element by hydrocarbon system raw materials of compound, the ion beam generation method is characterized in that, the hydrocarbon system raw materials of compound includes the branched chain saturated hydrocarbons for having side chain, and the branched chain saturated hydrocarbons only passes through tertiary carbon atom branch.
Description
Technical field
The present invention relates to a kind of ion beam generation method and use the ion beam illuminating method of this method.
Background technique
Ion beam be used to make multiple (usually 2~2000 or so, also reach several hundred~thousands of sometimes)
The Surface-micromachining process on bulk group colliding solid surface made of atom or molecule are mutually bonded and ionize.In recent years, exist
To in the nanoprocessing technique of the various devices such as semiconductor devices, magnetism/dielectric devices, optical device, ion beam technology
Using attracting attention.
It is schematically illustrated using basic principle of the Fig. 1 to the generation method of ion beam.Base feed 1 first,
It is dissociated by the key that electronic impact method makes electron collision raw material 1 make raw material 1, generates ionized cluster ion 2.Generating cluster
When ion 2, it is usually formed simultaneously monatomic ion 4 and multi-atomic ion 6.Also, sometimes unstable multi-atomic ion 6 can be into
One step dissociation.Then, in order to choose the cluster ion 2 of required cluster size, and the mass separation of ion generated is carried out.It connects
, it will be extracted out by cluster ion 2 selected by the mass separation using specified acceleration voltage, the form of ion beam be made.
By making the ion beam so obtained collide the surface of target T, surface processing can be carried out to target T.In addition, in room temperature
Under atmospheric pressure environment, raw material 1 can be any one of gas, liquid and solid.Will make in the device electron collision raw material 1 it
Before, raw material 1 gasifies.
In addition, in the present specification, so-called " cluster ion " refers to above-mentioned ionized blocky group, so-called " cluster ion
Beam " is beam parallel with pencil obtained by instigating the cluster ion to accelerate and assemble in a vacuum.Also, so-called " cluster size " is
Refer to the number of the atom or molecule that constitute a cluster.
Here, the application applicant proposes a kind of manufacturing method of semiconductor epitaxial wafer in patent document 1, packet
Include: ion beam irradiation process forms the cluster ion on the surface of the semiconductor wafer to semiconductor wafer illumination cluster ion
Constitution element solid solution made of modified layer；And the process that epitaxial layer is formed in the modified layer of the semiconductor wafer.
In the technology described in patent document 1, because to semiconductor wafer surface irradiate cluster ion, therefore with pass through list
Body ion implantation technique is formed by ion implanted regions and compares, be capable of forming cluster ion constitution element part and in high concentration
The region of precipitation.Therefore, it by technology documented by patent document 1, can obtain with extremely excellent suction compared with the past
The semiconductor epitaxial wafer of miscellaneous (gettering) ability, is able to suppress heavy metal pollution.
Also, the application applicant also proposed the manufacturing method of semiconductor epitaxial wafer below in patent document 2,
To provide the manufacturing method for the semiconductor epitaxial wafer that there is the generation of high gettering ability and epitaxy defect to be inhibited.That is, specially
In the manufacturing method of semiconductor epitaxial wafer disclosed in sharp document 2, comprising: ion beam irradiation process, to semiconductor wafer
Surface irradiate cluster ion, formed in the surface element of the semiconductor wafer modified made of the constitution element solid solution of the cluster ion
Layer；And the process that epitaxial layer is formed in the modified layer of the semiconductor wafer, the ion beam irradiation process is with institute
The a part for stating the thickness direction of modified layer becomes amorphous layer, and the surface of the semiconductor wafer surface side of the amorphous layer
Mean depth is carried out away from the mode that the semiconductor wafer surface reaches 20nm or more.
Existing technical literature
Patent document
Patent document 1: International Publication No. 2012/157162
Patent document 2: Japanese Unexamined Patent Publication 2015-130402 bulletin
Summary of the invention
Problems to be solved by the invention
Here, in order to carry out patent document 1, ion beam irradiation process disclosed Patent Document 2, although also depending on
The chip diameter of the dosage or beam current value of the cluster ion irradiated, semiconductor wafer, but to a piece of semiconductor wafer carry out cluster from
Beamlet irradiation needs many times.Therefore, in order to use include ion beam irradiation process semiconductor epitaxial wafer manufacture
Method carrys out mass production semiconductor epitaxial wafer, it is expected that improving yield (throughput).
In ion beam irradiation process, if dosage is identical, the beam current value of ion beam is bigger, can more shorten photograph
Penetrate the time.Such as it is disclosed in embodiment in patent document 2 and C is generated by hexamethylene3H5Cluster, beam current value are 400 μ
A.In order to improve the yield of semiconductor epitaxial wafer manufacture, present inventors have recognized that increasing beam current value as new problem.
Therefore, in view of the above problems, the purpose of the present invention is to provide it is a kind of can be than increasing the beam of ion beam in the past
The ion beam generation method of current value.Moreover, using the ion beam generation method the purpose of the present invention is to provide a kind of
Ion beam illuminating method and semiconductor epitaxial wafer manufacturing method.
Solution for solving technical problems
The present inventor is concentrated on studies to solve the above-mentioned problems.The result that the present inventor concentrates on studies is true
The decomposition condition for recognizing the raw material by change ion source can increase beam current value to a certain extent, but the increase exists
The limit.Therefore, the present inventor is conceived to the raw material of ion source, is especially conceived to the molecular structure of hydrocarbon system raw materials of compound.This hair
Bright people's discovery, in generating constitution element in the case where the beam of the cluster ion containing carbon and hydrogen, by using specified structure
Branched chain saturated hydrocarbons is as hydrocarbon system raw materials of compound, the current value compared with the past that can significantly improve ion beam, with
To completing the present invention.That is, purport composition of the invention is as follows.
(1) a kind of ion beam generation method generates the cluster containing carbon and hydrogen in constitution element by hydrocarbon system raw materials of compound
The beam of ion, the ion beam generation method are characterized in that the hydrocarbon system raw materials of compound includes point for having side chain
Branched-chain saturated hydrocarbon, the branched chain saturated hydrocarbons only pass through tertiary carbon atom branch.
(2) ion beam generation method described according to (1), wherein the branched chain saturated hydrocarbons only has one
The tertiary carbon atom.
(3) ion beam generation method described according to (1), wherein branched chain saturated hydrocarbons tool there are two or
Three or more the tertiary carbon atoms, it is described two or three or more the tertiary carbon atom via one or more
Secondary carbon and be bonded.
(4) ion beam generation method described according to (3), wherein there are two institutes for the branched chain saturated hydrocarbons tool
State tertiary carbon atom.
(5) ion beam generation method described according to (4), wherein described two tertiary carbon atoms are via one
A secondary carbon and be bonded.
(6) a kind of ion beam illuminating method, which is characterized in that the cluster described in any one of described (1) to (5) will be utilized
Ion beam generation method and the ion beam generated are irradiated to the surface of semiconductor wafer.
Invention effect
In accordance with the invention it is possible to which providing one kind can generate than increasing the ion beam of the beam current value of ion beam in the past
Method.Moreover, the present invention be capable of providing it is a kind of can be than increasing the ion beam illuminating method of beam current value in the past.
Detailed description of the invention
Fig. 1 is the schematic diagram for being illustrated to the basic principle that ion beam generates.
In Fig. 2, Fig. 2A, Fig. 2 B, Fig. 2 C are for half to the ion beam illuminating method for using one embodiment of the present invention
The schematic sectional view that the manufacturing method of conductor epitaxial wafer 100 is illustrated.
Specific embodiment
(ion beam generation method)
The ion beam generation method of one embodiment of the present invention is to be generated in constitution element to contain by hydrocarbon system raw materials of compound
The ion beam generation method of the beam of the cluster ion of carbon and hydrogen.Here, hydrocarbon system raw materials of compound includes the branch for having side chain
Chain saturated hydrocarbons, the branched chain saturated hydrocarbons only pass through tertiary carbon atom branch.In addition, may include that can not keep away in hydrocarbon system raw materials of compound
The impurity exempted from.
It is already described that Fig. 1 is such as used above in the basic principle of ion beam generation method.That is, base feed 1 first, passes through electronics
Impingement method makes electron collision raw material 1 and dissociates the key of raw material 1, generates ionized cluster ion 2.Then, it carries out being generated
Ion mass separation and choose cluster ion 2, the cluster ion 2 is extracted out by specified acceleration voltage, ion beam is made
Form.Ion beam can so be generated.The ion beam so obtained can be irradiated to the surface of arbitrary target T.
As using the cluster ion injection device of this principle, such as it is able to use the manufacture of day new ion machine limited liability company
CLARIS (registered trademark).
In the present embodiment, use above-mentioned hydrocarbon system raw materials of compound gas as raw material 1.Constitute resulting ion beam
The constitution element of cluster ion 2 contain carbon and hydrogen, more particularly to only be made of the constitution element of cluster ion 2 carbon and hydrogen.
Hereinafter, hydrocarbon system raw materials of compound used in present embodiment is described in more detail.Hydrocarbon system raw materials of compound
To have the branched chain saturated hydrocarbons of side chain, the branched chain saturated hydrocarbons is it is important that only pass through tertiary carbon atom branch.This point
Branched-chain saturated hydrocarbon can be indicated by following formula (I)s.
[chemical formula 1]
Here, being bonded to the R of tertiary carbon atom in above-mentioned formula (I)1、R2And R3It is the independence that carbon atom number is set as to 1 or 2 or more
Straight-chain or branched alkyl groups.R1、R2And R3Can all identical alkyl, can also any two be identical alkyl, can also all not
Together.It also include carbon atom number is that 1 or more and 3 below can not generate branch in addition, " straight-chain " described herein refers to
The situation of hydrocarbon is known as " straight-chain " below with identical connotation.
In addition, branched chain saturated hydrocarbons used in present embodiment for gas, liquid and can be consolidated under normal temperature and pressure environment
Any one of body, as long as under vacuum (such as 10-2Pa or less) chamber in will make raw material and electron collision before, branch
Chain is saturated hydrocarbon gasification.That is, can make the material gasification of liquid when introducing a material into in chamber and with electron collision and supply
It is given in chamber, the raw material of solid can also be made heating and gasifying and to be directed into chamber in other devices in a vacuum, it can also will
Unstrpped gas of gas itself is supplied in chamber.Carbon atom number as this branched chain saturated hydrocarbons can illustrate 4 or more and
16 or less.Also, it is preferred that the carbon atom number of branched chain saturated hydrocarbons is set as 5 or more, more preferably it is set as 6 or more.On the other hand, excellent
The carbon atom number of branched chain saturated hydrocarbons is set as 10 hereinafter, being more preferably set as 8 hereinafter, being particularly preferably set as 7 or less by choosing.Therefore,
R1、R2And R3Total number of carbon atoms can be set as 3 or more and 15 or less.Also, it is preferred that by these R1、R2And R3Total carbon atom
Number is set as 4 or more, is more preferably set as 5 or more.On the other hand, preferably by these R1、R2And R3Total number of carbon atoms be set as 9 with
Under, 7 are more preferably set as hereinafter, being particularly preferably set as 6 or less.
In addition, the R in above-mentioned formula (I)1、R2And R3As long as carbon atom number meet total number of carbon atoms already described above,
Separately it is 1 or more, 2 or more can be set as, and 3 or more can be set as.Similarly, R1、R2And R3Carbon atom number meet
While total number of carbon atoms already described above, 4 can be separately set as hereinafter, 3 can be set as hereinafter, and can be set as
2 or less.R1、R2And R3Carbon atom number can be all identical, also any two carbon atom number can be made identical, can also be all different.
In addition, present inventor has performed concentrating on studies, as a result, it has been found that when generating ion beam by hydrocarbon system raw materials of compound,
In order to relatively significantly increase beam current value in the past, only there are the limit in the case where the decomposition condition of the raw material of adjustment ion source.
In addition, in saturated hydrocarbons (alkane), key between the tertiary carbon atom and alkyl free radical generated in dissociation is stablized, therefore and
Compared with the key between alkyl, bond dissociation energy is smaller for primary carbon atom or secondary carbon.Therefore, passing through electronic impact method electronics
When colliding branched chain saturated hydrocarbons represented by above-mentioned formula (I), the key between alkyl that tertiary carbon atom is bonded with it preferentially occurs
Dissociation is easy to generate free radical and ion.Therefore, inventors believe that can be improved the formation efficiency of ion beam.Therefore, originally
Inventor is conceived in this respect, finds by the way that branched chain saturated hydrocarbons represented by above-mentioned formula (I) is used as hydrocarbon system raw materials of compound,
Can be than significantly increasing the beam current value of ion beam generated in the past, and empirically specify the effect.
It, can be than in the past substantially in this way, by the way that the branched chain saturated hydrocarbons of present embodiment is used for hydrocarbon system raw materials of compound
Degree ground increases the beam current value of ion beam.It, can be by resulting beam electricity in the ion beam of hydrocarbon system by present embodiment
Flow valuve is set as 1000 μ A or more, can be set as 1200 μ A or more, can be set as 1500 μ A or more, can be set as 1800 μ A or more,
And 2000 μ A or more can be set as.
Here, branched chain saturated hydrocarbons represented by above-mentioned formula (I) preferably only has a tertiary carbon atom.That is, it is preferred that formula (I)
In R1、R2And R3It is set as the saturated alkyl of straight-chain.Such as it can be by R1Be set as methyl, ethyl, n-propyl, in normal-butyl
Either one or two of, and by R2And R3It is set as any of methyl or ethyl.
As this branched chain saturated hydrocarbons can illustrate 2- methylpropane, 2- methybutane, 2- methylpentane, 2- methyl oneself
Alkane, 2- methyl heptane etc..By the way that these branched chain saturated hydrocarbons are used for hydrocarbon system raw materials of compound, can more reliably increase cluster from
The beam current value of beamlet.
On the other hand, branched chain saturated hydrocarbons represented by above-mentioned formula (I) is preferably also the uncle having more than two or three
Carbon atom, these two or three more than tertiary carbon atom be bonded via one or more secondary carbon.Especially
Preferably there are two tertiary carbon atoms for branched chain saturated hydrocarbons tool.The branched chain saturated hydrocarbons of the latter can be by following formula (II)s come table
Show.
[chemical formula 2]
Here, being bonded to the R of tertiary carbon atom in above-mentioned formula (II)4For the saturation alkylidene of straight-chain, R5、R6、R7And R8It is
The saturated alkyl of straight-chain.
As already described above, there are tertiary carbon, it is easy to generate carbon radicals.However, people grinds according to the present invention
Study carefully and confirms, in the case where tertiary carbon bonds together, bond dissociation energy is too small, it is ionized explosively because of electron collision,
Sometimes it is difficult to control.In this case, the beam current value of ion beam becomes smaller instead sometimes.Therefore, in the present embodiment
In branched chain saturated hydrocarbons used there are in the case where the tertiary carbon atom more than two or three, it is preferable to use these two or three
The branched chain saturated hydrocarbons that a above tertiary carbon atom is bonded via one or more secondary carbon.
Here, through the carbon atom number of branched chain saturated hydrocarbons represented by formula (II) also other than lower limit is 7, with formula
(I) carbon atom number of branched chain saturated hydrocarbons is identical.Therefore, R4、R5、R6、R7And R8Total number of carbon atoms can be set as 5 or more
And 14 or less.Also, it is preferred that by these R4、R5、R6、R7And R8Total number of carbon atoms be set as 5 or more, be preferably set to 6 or more, it is excellent
Choosing is set as 7 or more.On the other hand, preferably by these R4、R5、R6、R7And R8Total number of carbon atoms be set as 9 hereinafter, being preferably set to 8
Hereinafter, being preferably set to 7 or less.
Moreover, the R in above-mentioned formula (II)4、R5、R6、R7And R8Carbon atom number meet total number of carbon atoms already described above
While, it is separately 1 or more, 2 or more can be set as, and 3 or more can be set as.Similarly, R4、R5、R6、R7And R8's
While carbon atom number meets total number of carbon atoms already described above, can separately be set as 4 hereinafter, can be set as 3 with
Under, and 2 or less can be set as.R4、R5、R6、R7And R8Carbon atom number can all it is identical, can also make any two, three or
Four carbon atom numbers are identical, can also be all different.
2,4- dimethyl pentane, 2,4- dimethylhexane, 2,4- dimethyl can be illustrated as this branched chain saturated hydrocarbons
Heptane, 2,5- dimethylhexane, 2,5- dimethyl heptane etc..By the way that these branched chain saturated hydrocarbons are used for hydrocarbon system raw materials of compound
Gas can more reliably increase the beam current value of ion beam.
Also, in the case where the branched chain saturated hydrocarbons for stating formula (II) in use, preferably two tertiary carbon atoms are via one
Secondary carbon and be bonded.That is, it is preferred that R in formula (II)4For methylene.Such as the branched chain saturated hydrocarbons energy as above-mentioned formula (II)
Enough use 2,4- dimethyl pentane, 2,4- dimethylhexane, 2,4- dimethyl heptane.By the way that this branched chain saturated hydrocarbons is used for
Hydrocarbon system raw materials of compound gas can more reliably increase the beam current value of ion beam.
In addition, cluster ion according to bonding pattern and there are a variety of clusters, such as can be as using recording in following documents
Known method generate.(1) charged particle ビ ー system engineering: Ishikawa is along three: ISBN978-4-339-00734-3: U ロ Na
Society, (2) electronics イ オ ン ビ ー system engineering: electric mood association: ISBN4-88686-217-9: オ ー system society, (3) Network ラ ス タ
ー イ オ ン ビ ー system basis と ying is used: ISBN4-526-05765-7: Nikkan Kogyo Shimbun.Also, usually generating positive electricity
Nelson's (Nielsen) type ion source or Kaufman (Kaufman) type ion source are used when the cluster ion of lotus, are generating negative electrical charge
Cluster ion when using using batch production (volume production) high current anion source.
Also, the acceleration voltage of each carbon atom of cluster ion generated be preferably set as more than 0keV/atom and
For 50keV/atom hereinafter, being preferably set to 40keV/atom or less.Also, cluster size, which also depends on, constitutes hydrocarbon system raw materials of compound
Branched chain saturated hydrocarbons, but 2~50 or less can be set as.
Also, when adjusting acceleration voltage, accelerate usually using (1) electrostatic, (2) high frequency accelerates both methods.As
There are as below methods for the former method: equally spaced arranging multiple electrodes, applies equal voltage between these electrodes and in axis side
The accelerating fields such as production upwards.The linear linear accelerator of method (linac) method as the latter: make ion with linear on one side
Traveling is accelerated using high frequency on one side.Also, the adjustment of the cluster size and beam current value of ion beam can be by adjusting true
Voltage that filament (filament) the is applied when pressure (flow of the gas imported) of empty container and ionization etc. and into
Row.In addition, cluster is dimensioned such that with the mass separation method using quadrupole high-frequency electric field or monofocal sectorial magnetic field and carries out.
Hereinafter, being directed at other implementations of the invention while referring to Fig. 2A, Fig. 2 B, Fig. 2 C (hereinafter referred to as Fig. 2A~Fig. 2 C)
The ion beam illuminating method of mode is illustrated.In addition, identical reference number is marked to identical constitutive requirements in principle, and
It omits the description.In addition, in Fig. 2A~Fig. 2 C, for purposes of illustration only, it is different from actual thickness proportion, relative to semiconductor wafer 10
And the thickness of epitaxial layer 20 is large shown.
(ion beam illuminating method)
As shown in Figure 2 A, the ion beam illuminating method of one embodiment of the present invention will use above-mentioned ion beam generation method
Embodiment ion beam C generated be irradiated to the surface 10A of semiconductor wafer 10.In the present embodiment, Neng Goujin
The ion beam irradiation that row beam current value increased more in the past.Therefore, if the cluster ion of irradiation and conventional art same dose, with
Conventional art, which is compared, can shorten irradiation time.
In addition, can be for example enumerated as semiconductor wafer 10 comprising silicon, compound semiconductor (GaAs, GaN, SiC) and table
Face does not have the block-like single-crystal wafer of epitaxial layer.Also, semiconductor wafer 10 is able to use through scroll saw (wire saw) etc.
Czochralski method (Czochralski method, CZ method) or floating zone method (Floating zone method, FZ method) will be utilized
Monocrystal silicon slice (slice) the resulting silicon wafer cultivated.Also, carbon and/or nitrogen can also be added in silicon wafer.And
And arbitrary impurity dopant can also be added and N-shaped or p-type is made.Also, it is also able to use as semiconductor wafer 10 in block
Shape semiconductor wafer surface is formed with the epitaxially coated semiconductor wafer of semiconductor epitaxial layers.
In addition, the dosage of cluster ion can be adjusted by control beam current value and ion irradiation time.Can by cluster from
The dosage of the carbon of son is set as such as 1 × 1013~1 × 1016atoms/cm2.Moreover, beam current value can be set as already described above
For 1000 μ A or more, 1200 μ A or more can be set as, 1500 μ A or more can be set as, 1800 μ A or more, Er Qieneng can be set as
Enough it is set as 2000 μ A or more.
(reference implementation mode: the manufacturing method of semiconductor epitaxial wafer)
As shown in Fig. 2A~Fig. 2 C, by including that following process can manufacture semiconductor epitaxial wafer 100: ion beam irradiates work
The embodiment for using above-mentioned ion beam generation method ion beam C generated is irradiated to semiconductor wafer 10 by sequence
Surface 10A (Fig. 2A) forms modified layer 18 made of the constitution element solid solution of cluster ion in the surface element of the semiconductor wafer 10
(Fig. 2 B)；And epitaxial layer formation process, epitaxial layer 20 (Fig. 2 C) is formed in the modified layer 18 of semiconductor wafer 10.
It is crystalline substance of the carbon in the surface element of semiconductor wafer 10 by the modified layer 18 that ion beam irradiation process is formed
Position or displacement position solid solution between the lattice of body and locally existing region, can be as the gettering site of strength
(gettering site) and play a role.
In epitaxial layer formation process, silicon epitaxy layer can be enumerated as the epitaxial layer 20 being formed in modified layer 18, it can
It is formed by common condition.Such as the source gases such as dichlorosilane, trichlorosilane can be directed into chamber using hydrogen as carrier gas
It interior can be substantially in 1000~1200 DEG C of temperature model although growth temperature is also different according to used source gas
Epitaxial growth is carried out on semiconductor wafer 10 by CVD method at a temperature of enclosing.The thickness of epitaxial layer 20 is preferably set to 1~15 μm
In the range of.
By using the ion beam illuminating method of present embodiment, there can be excellent gettering than improving manufacture in the past
The yield when semiconductor epitaxial wafer of ability.
Embodiment
Hereinafter, the present invention is described in more detail using embodiment, but the present invention is not by any limit of following embodiment
It is fixed.
(example 1)
Using cluster ion generation device (day, new ion machine corporation was made, model: CLARIS), 2- methylpentane (C is used6H14)
As raw material, the C through cluster ion is generated3H5Cluster ion.The beam current value of resulting ion beam is 2000 μ A.
(example 2)
In example 1, instead of 2- methylpentane by 2,4- dimethyl pentane (C7H16) it is used for raw material, in addition to this, with hair
Bright example 1 has been equally generated the C through cluster ion3H5Cluster ion.The beam current value of resulting ion beam is 1800 μ A.
(previous example 1)
In example 1, instead of 2- methylpentane by hexamethylene (C6H12) it is used for raw material, it is in addition to this, same as example 1
Ground generates the C through cluster ion3H5Cluster ion.The beam current value of resulting ion beam is 800 μ A.
(comparative example 1)
In example 1, instead of 2- methylpentane by hexane (C6H14) it is used for raw material, in addition to this, in the same manner as example 1
Generate the C through cluster ion3H5Cluster ion.The beam current value of resulting ion beam is 800 μ A.
(comparative example 2)
In example 1, instead of 2- methylpentane by 2,3- dimethylbutane (C6H14) it is used for raw material, in addition to this, with hair
Bright example 1 has been equally generated the C through cluster ion3H5Cluster ion.The beam current value of resulting ion beam is 20 μ A.
The result of above example 1, example 2, previous example 1 and comparative example 1, comparative example 2 is recorded in following table 1
In.
[table 1]
< evaluates >
In example 1, example 2, being able to confirm that be can get twice or more that passes through the resulting beam current value of previous example 1
Beam current value.It is believed that the reason is that example 1, example 2 are different from previous example 1 and comparative example 1, because former containing tertiary carbon
Son, therefore it is easy to happen key dissociation, result is easy to take out C3H5Cluster ion.On the other hand, though containing tertiary carbon in comparative example 2
Atom, but it is more to discharge, it is difficult to ion beam is formed, therefore beam current value is less than previous example 1.It is believed that the reason is that 2,3-
Key between the tertiary carbon in dimethylbutane center is very weak, therefore control when generation cluster ion is more difficult, carries out more explosively
Ion generates.
Industrial availability
In accordance with the invention it is possible to which providing one kind can generate than increasing the ion beam of the beam current value of ion beam in the past
Method.Moreover, the present invention be capable of providing it is a kind of can be than increasing the ion beam illuminating method of beam current value in the past.Therefore half
It is particularly useful in conductor industry.
Description of symbols
1- raw material, 2- cluster ion, 4- monatomic ion, 6- multi-atomic ion, 10- semiconductor wafer, 10A- semiconductor die
The surface of piece, 18- modified layer, 20- epitaxial layer, 100- semiconductor epitaxial wafer, C- ion beam, T- target.
Claims (6)
1. a kind of ion beam generation method generates the cluster ion containing carbon and hydrogen in constitution element by hydrocarbon system raw materials of compound
Beam, the ion beam generation method is characterized in that,
The hydrocarbon system raw materials of compound includes the branched chain saturated hydrocarbons for having side chain, and the branched chain saturated hydrocarbons only passes through tertiary carbon original
Son and branch.
2. ion beam generation method according to claim 1, wherein
The branched chain saturated hydrocarbons only has the tertiary carbon atom.
3. ion beam generation method according to claim 1, wherein
The branched chain saturated hydrocarbons has the tertiary carbon atom more than two or three, described two or three or more described
Tertiary carbon atom is bonded via one or more secondary carbon.
4. ion beam generation method according to claim 3, wherein
There are two the tertiary carbon atoms for the branched chain saturated hydrocarbons tool.
5. ion beam generation method according to claim 4, wherein
Described two tertiary carbon atoms are bonded via a secondary carbon.
6. a kind of ion beam illuminating method, which is characterized in that
The ion beam generated using ion beam generation method described in any one of any one of claims 1 to 55 is irradiated to half
The surface of conductor chip.
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| JP2016133588A JP6750351B2 (en) | 2016-07-05 | 2016-07-05 | Cluster ion beam generation method and cluster ion beam irradiation method using the same |
| JP2016-133588 | 2016-07-05 | ||
| PCT/JP2017/024029 WO2018008533A1 (en) | 2016-07-05 | 2017-06-29 | Cluster ion beam generation method and cluster ion beam irradiation method using same |
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|---|---|---|---|---|
| CN101313395A (en) * | 2005-12-09 | 2008-11-26 | 山米奎普公司 | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
| CN102308356A (en) * | 2009-02-04 | 2012-01-04 | Tel埃皮恩公司 | Multiple nozzle gas cluster ion beam system and method |
| CN104051208A (en) * | 2013-03-15 | 2014-09-17 | 日新离子机器株式会社 | Magnetic Field Sources For An Ion Source |
| JP2016051729A (en) * | 2014-08-28 | 2016-04-11 | 株式会社Sumco | Semiconductor epitaxial wafer, manufacturing method thereof, and manufacturing method of solid-state imaging device |
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| JP4820038B2 (en) * | 1999-12-13 | 2011-11-24 | セメクイップ， インコーポレイテッド | Ion implanted ion source, system, and method |
| US8455060B2 (en) * | 2009-02-19 | 2013-06-04 | Tel Epion Inc. | Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam |
| JP2012157162A (en) | 2011-01-26 | 2012-08-16 | Sumitomo Electric Ind Ltd | Insulation circuit for power transmission and power converter |
| KR20150130402A (en) | 2013-03-13 | 2015-11-23 | 시텍 게엠베하 | Temperature management in chlorination processes and systems related thereto |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101313395A (en) * | 2005-12-09 | 2008-11-26 | 山米奎普公司 | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
| CN102308356A (en) * | 2009-02-04 | 2012-01-04 | Tel埃皮恩公司 | Multiple nozzle gas cluster ion beam system and method |
| CN104051208A (en) * | 2013-03-15 | 2014-09-17 | 日新离子机器株式会社 | Magnetic Field Sources For An Ion Source |
| JP2016051729A (en) * | 2014-08-28 | 2016-04-11 | 株式会社Sumco | Semiconductor epitaxial wafer, manufacturing method thereof, and manufacturing method of solid-state imaging device |
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| KR20180111950A (en) | 2018-10-11 |
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