CN109143709A - TFT substrate and liquid crystal display device - Google Patents
TFT substrate and liquid crystal display device Download PDFInfo
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- CN109143709A CN109143709A CN201811328899.4A CN201811328899A CN109143709A CN 109143709 A CN109143709 A CN 109143709A CN 201811328899 A CN201811328899 A CN 201811328899A CN 109143709 A CN109143709 A CN 109143709A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of TFT substrate and liquid crystal display device, including substrate, the first metal layer, first insulating layer, second metal layer, second insulating layer, transparency conducting layer and the first through hole group including multiple first through hole and the second sets of vias including at least one the second through-hole, each first through hole is correspondingly arranged at least one second through-hole, and first through hole is through to side of the second insulating layer far from the first insulating layer far from the side of substrate from the first metal layer, second through-hole is through to side of the second insulating layer far from second metal layer far from the side of the first insulating layer from second metal layer, transparency conducting layer is connect by first through hole with the first metal layer, and it is connect by the second through-hole with second metal layer.By above-mentioned setting, to realize the bridging between the first metal layer and second metal layer, and electric current transmission is carried out simultaneously by the multiple portions between each first through hole and corresponding second through-hole of the first through hole, and then the resistance that bridging generates is effectively reduced.
Description
Technical field
The present invention relates to display technology fields, in particular to a kind of TFT substrate and liquid crystal display device.
Background technique
With the development of display technology, TFT-LCD (Thin Film Transistor-Liquid Crystal
Display, Thin Film Transistor-LCD) with its absolute advantage (at low cost, image quality is good, low in energy consumption etc.) in display field
Leading position is occupied, such as can be applied to computer, television set, in mobile phone audio-visual equipment.But existing TFT-LCD common electrical
The resistance value of pole is excessive, and then the problem that may be will affect display quality, and cause power consumption excessive.
Summary of the invention
In view of this, above-mentioned technology can be effectively relieved and ask the present invention provides a kind of TFT substrate and liquid crystal display device
Topic.
On the one hand, present pre-ferred embodiments provide a kind of TFT substrate, comprising:
Substrate, the first metal layer for being set to the substrate；
It is covered in the first insulating layer of the first metal layer；
It is set to second metal layer and covering second gold medal of first insulating layer far from the first metal layer side
Belong to the second insulating layer of layer；
First through hole group including multiple first through hole and the second sets of vias including at least one the second through-hole, Mei Gesuo
First through hole is stated to be correspondingly arranged with the second through-hole described at least one；Wherein: the first through hole is remote from the first metal layer
Side of the second insulating layer far from first insulating layer is through to from the side of substrate, and second through-hole is from described
Two metal layers are through to side of the second insulating layer far from the second metal layer far from the side of first insulating layer；
The transparency conducting layer to be formed is made based on the second insulating layer, the transparency conducting layer passes through the first through hole
It connect, and is connect by second through-hole with the second metal layer, the first metal layer with the first metal layer
Part with second metal layer by the transparency conducting layer between first through hole and corresponding second through-hole of the first through hole
Transmit electric current.
In the preferred embodiment, in above-mentioned TFT substrate, each first through hole along first direction successively between
Every setting, second through-hole is multiple and successively interval setting in a second direction, the first direction and the second direction
In parallel.
In the preferred embodiment, in above-mentioned TFT substrate, each first through hole with one described second
Through-hole is corresponding, and each first through hole is equal with the distance between corresponding second through-hole.
In the preferred embodiment, in above-mentioned TFT substrate, the arbitrary neighborhood in the first through hole group two
The distance between the first through hole is equal.
In the preferred embodiment, in above-mentioned TFT substrate, the first through hole that first through hole group includes is two
A, the second through-hole that second sets of vias includes is two, and two first through hole and two second through-hole positions
In same straight line, and two second through-holes are located between two first through hole.
In the preferred embodiment, in above-mentioned TFT substrate, each second through-hole to corresponding first through hole
The distance between it is equal.
In the preferred embodiment, in above-mentioned TFT substrate, the first through hole that first through hole group includes is two
A, the second through-hole that second sets of vias includes is one, and second through-hole is between two first through hole
It is equidistant.
In the preferred embodiment, in above-mentioned TFT substrate, second through-hole and two first through hole
Positioned at same straight line.
In the preferred embodiment, in above-mentioned TFT substrate, the first through hole group includes two first logical
Hole, second sets of vias include two the second through-holes, and each first through hole is respectively between two second through-holes
It is equidistant.
On the other hand, present pre-ferred embodiments also provide a kind of liquid crystal display device, and the liquid crystal display device includes
Above-mentioned TFT substrate.
Compared with prior art, the present invention provides a kind of TFT substrate and liquid crystal display device, including substrate, the first metal
Layer, the first insulating layer, second metal layer, second insulating layer, transparency conducting layer and the first through hole including multiple first through hole
Group and the second sets of vias including at least one the second through-hole, each first through hole are correspondingly arranged at least one second through-hole,
Transparency conducting layer is connect by first through hole with the first metal layer, and is connect by the second through-hole with second metal layer.Pass through
The bridging between the first metal layer and second metal layer may be implemented and by each first through hole and the first through hole in above-mentioned setting
Multiple portions between corresponding second through-hole carry out electric current transmission simultaneously, the resistance that bridging generates are effectively reduced, and then effectively
It promotes display quality and reduces power consumption.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 provides the partial top view of TFT substrate for the embodiment of the present invention.
Fig. 2 is diagrammatic cross-section of the TFT substrate in Fig. 1 along the direction aa '.
Fig. 3 is another partial top view of the TFT substrate provided in the embodiment of the present invention.
Fig. 4 is diagrammatic cross-section of the TFT substrate in 3 along the direction aa '.
Fig. 5 is another partial top view of the TFT substrate provided in the embodiment of the present invention.
Fig. 6 is diagrammatic cross-section of the TFT substrate in 5 along the direction aa '.
Fig. 7 is another partial top view of the TFT substrate provided in the embodiment of the present invention.
Fig. 8 is diagrammatic cross-section of the TFT substrate in 7 along the direction aa '.
Icon: 100-TFT substrate；110- substrate；120- the first metal layer；The first insulating layer of 130-；The second metal of 140-
Layer；150- second insulating layer；160- first through hole group；160a- first through hole；The second sets of vias of 170-；The second through-hole of 170a-；
180- transparency conducting layer.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment only
It is a part of the embodiments of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings
The component of embodiment can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.In description of the invention
In, " first, second, third, fourth etc. is only used for distinguishing description term, and should not be understood as only or imply relative importance.
In the description of the present invention unless specifically defined or limited otherwise, term " setting ", " connected ", " connection " are answered
It is interpreted broadly, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The connection in portion.For the ordinary skill in the art, the tool of above-mentioned term in the present invention can be understood with concrete condition
Body meaning.
TFT substrate in existing liquid crystal display device generally includes viewing area and surround to be set to around the viewing area
Non-display area, usually two metal layers in TFT substrate are carried out changing layer on the non-display area of the liquid crystal display device
Bridging, inventor it has been investigated that, will have a direct impact on liquid crystal display device change the resistance sizes generated when layer bridging
Display quality and power consumption.
Incorporated by reference to Fig. 1 and Fig. 2, the embodiment of the present invention provides a kind of TFT substrate 100, comprising: substrate 110 is set to described
The first metal layer 120 of substrate 110 is covered in the first insulating layer 130 of the first metal layer 120, is set to described first
The second of second metal layer 140 and the covering second metal layer 140 of the insulating layer 130 far from 120 side of the first metal layer
Insulating layer 150.
The TFT substrate 100 is additionally provided with first through hole group 160 including multiple first through hole 160a and including at least one
The second sets of vias 170 of a second through-hole 170a, each first through hole 160a are corresponding at least one second through-hole 170a
Setting；Wherein, the first through hole 160a is through to described second far from the side of substrate 110 from the first metal layer 120
Side of the insulating layer 150 far from first insulating layer 130, the second through-hole 170a is far from the second metal layer 140
The side of first insulating layer 130 is through to side of the second insulating layer 150 far from the second metal layer 140.
The TFT substrate 100 further includes the transparency conducting layer 180 formed based on the second insulating layer 150 production, described
Transparency conducting layer 180 is connect by the first through hole 160a with the first metal layer 120, and passes through second through-hole
170a is connect with the second metal layer 140, and the first metal layer 120 passes through the electrically conducting transparent with second metal layer 140
Fractional transmission electric current of the layer 180 between the corresponding second through-hole 170a of first through hole 160a and first through hole 160a.
Made by above-mentioned setting when the first metal layer 120 carries out changing layer bridging with the second metal layer 140
Electric current transmission is carried out simultaneously by the multiple portions of transparency conducting layer 180 between the first metal layer 120 and second metal layer 140
(transmission direction of electric current is arrow direction in Fig. 2), makes between each first through hole 160a and corresponding second through-hole 170a
Part realize it is in parallel, the resistance that bridging generates is effectively reduced, so that effectively promoting TFT substrate 100 is applied to the liquid crystal
Display quality and reduction power consumption when display device.
It should be noted that the transparency conducting layer 180 is located at first through hole 160a and corresponding second through-hole in Fig. 2
When direction indicated by dotted line with the arrow in part is the first metal layer 120 and the bridging of second metal layer 140 between 170a
Current direction, the transparency conducting layer 180 is usually ito film layer, and the thickness of the ito film layer is relative to the first metal layer 120
With the very thin thickness of second metal layer 140, therefore, the ohmer formula of transparency conducting layer 180 is R=ρ .L/S=ρ .L/ (wt),
Wherein ρ is resistivity, is determined by material, and L is the transparency conducting layer 180 in the second through-hole 170a and 170a pairs of second through-hole
The length (bridging length) for the part between first through hole 160a answered, S is the cross-sectional area of conductive material, and w is conductive material
Width, t is thickness.According to above-mentioned ohmer formula it is found that the smaller then resistance of the thickness of ito film layer is bigger, do not influencing
In the case where light rate, i.e., film thickness it is constant in the case where, can reduce bridging length L or increase bridging width, due to bridge length
It is determined by the distance of first through hole 160a and corresponding second through-hole 170a, and due to the limitation of manufacturing process, generally reached
Minimum range be a setting value, in the present embodiment, when bridge length be the setting value when, the present invention by be arranged it is multiple
First through hole 160a and at least one second through-hole 170a increases bridging width to realize, that is, uses the transparency conducting layer 180
Part in parallel between the corresponding second through-hole 170a of multiple first through hole 160a and first through hole 160a realize increase across
It connects width and then resistance is effectively reduced.
It should also be noted that, since the resistance of ITO is excessive, when there are multiple first through hole 160a and multiple second through-holes
When 170a, second through-hole 170a corresponding with the first through hole 160a is logical to described first in multiple second through-hole 170a
The distance of hole 160a is the smallest second through-hole 170a, i.e., corresponding bridging length is minimum.In addition it is also necessary to explanation,
It can be one to the distance of the first through hole 160a in multiple second through-hole 170a for the smallest second through-hole 170a, it can also
To be multiple, it will be understood that multiple the smallest apart from the corresponding second through-hole 170a to described first with this when to be multiple
The distance of through-hole 160a is identical.For example, corresponding with any first through hole 160a (calling target first through hole in the following text) second is logical
Hole 170a can be determined in the following manner: multiple second through-hole 170a have one with the target first through hole respectively
Spacing, wherein the corresponding second through-hole 170a of minimum spacing is the corresponding second through-hole 170a of the target first through hole.
Wherein, it is 2,3 or 4 that the quantity of the first through hole 160a, which may be, but not limited to,, is not made herein specific
It limits, is configured according to practical application request.The quantity of at least one the second through-hole 170a can be but not limited to 1
A, 2,3 or 4, are not specifically limited herein, are configured according to practical application request.Multiple described first is logical
The specific location relationship of hole 160a and at least one the second through-hole 170a is also not especially limited, as long as can make each first
Parallel connection is realized in part between through-hole 160a and corresponding second through-hole 170a, the resistance that bridging generates is effectively reduced.
Referring to Fig. 1 and Fig. 2, specifically, in one embodiment, the first through hole 160a and the second through-hole
The quantity of 170a is respectively multiple, and each first through hole 160a is arranged along first direction, and each second through-hole 170a is along the
The setting of two directions, and the first direction is parallel with the second direction.
It is appreciated that the quantity of multiple first through hole 160a and the quantity of multiple second through-hole 170a can be phase
With, it is also possible to different, is not specifically limited herein.For example, it may be each first through hole 160a and one second are logical
Hole 170a is corresponding, and it is corresponding with multiple second through-hole 170a respectively to be also possible to each first through hole 160a, can also be each second
Through-hole 170a is corresponding with multiple first through hole 160a, as long as there are at least one corresponding second through-holes by each first through hole 170a
170a, and each second through-hole 170a is not specifically limited herein there is also at least one corresponding first through hole 160a,
It is configured according to actual needs.
For convenient for the first through hole group 160 and the second sets of vias 170 is arranged, and resistance is effectively reduced.In the present embodiment
In, each first through hole 160a is corresponding with the second through-hole 170a, and each first through hole 160a with it is corresponding
The distance between the second through-hole 170a tend to be equal.
For convenient for the first through hole group 160 and the second sets of vias 170 is arranged, optionally, in the present embodiment, when described
Arbitrary neighborhood when multiple first through hole 160a that first through hole group 160 includes are at least three, in the first through hole group 160
The distance between two first through hole 160a are equal.
Wherein, the distance between two neighboring first through hole 160a can be greater than or equal to first through hole 160a and this first
The distance between corresponding second through-hole 170a of through-hole 160a.
Optionally, in the present embodiment, the distance between two neighboring first through hole 160a and first through hole 160a with should
The distance between corresponding second through-hole 170a of first through hole 160a tends to be equal.
Incorporated by reference to Fig. 3 and Fig. 4, in another embodiment of the present invention, the first through hole group 160 includes first logical
Hole 160a is two, and the second through-hole 170a that second sets of vias 170 includes is two, and two first through hole 160a
It is located at same straight line with two the second through-hole 170a, and two the second through-hole 170a are located at two first through hole
Between 160a.
Wherein, the distance of each first through hole 160a to corresponding second through-hole 170a can be identical, can also be with
It is different, is configured according to actual needs.
Optionally, in the present embodiment, the distance between each described second through-hole 170a to corresponding first through hole 160a
Tend to be equal.
By above-mentioned setting, with the first metal layer 120 and second metal layer 140 by each first through hole 160a and this
When fractional transmission between the corresponding second through-hole 170a of one through-hole 160a, due to each second through-hole 170a to corresponding one
The distance between a first through hole 160a is equal, thus by saturating between the first metal layer 120 and second metal layer 140
Two parts of bright conductive layer 180 carry out electric current transmission (the arrow direction simultaneous transmission electric current passed through in such as Fig. 4) simultaneously,
The resistance that bridging generates is effectively reduced to effectively promote display when TFT substrate 100 is applied to the liquid crystal display device
Quality, and reduce power consumption.
Incorporated by reference to Fig. 5 and Fig. 6, in another embodiment of the present invention, the first through hole that first through hole group 160 includes
160a is two, and the second through-hole 170a that second sets of vias 170 includes is one, and described second through-hole 170a to two
The distance between the first through hole 160a is equal.
Wherein, the second through-hole 170a and two first through hole 160a can be located at same straight line, can also be located at not
Same straight line, is not specifically limited herein.
For convenient for through-hole, in the present embodiment, the second through-hole 170a and two described first through hole 160a is arranged
In same straight line.
By above-mentioned setting, with the first metal layer 120 and second metal layer 140 by each first through hole 160a and this
When fractional transmission between the corresponding second through-hole 170a of one through-hole 160a, due to described second through-hole 170a to two described
The distance between one through-hole 160a is equal, so as to be led between the first metal layer 120 and second metal layer 140 by transparent
Two parts of electric layer 180 carry out electric current transmission (the arrow direction simultaneous transmission electric current passed through in such as Fig. 6) simultaneously, to have
Effect reduce bridging generate resistance to effectively promoted TFT substrate 100 be applied to the liquid crystal display device when display quality,
And reduce power consumption.
Incorporated by reference to Fig. 7 and Fig. 8, it will be understood that cross section view and Fig. 2 or figure in Fig. 7 on the direction vertical with the direction aa '
8 is identical.In another embodiment of the present invention, the first through hole group 160 includes two first through hole 160a, and described second
Sets of vias 170 include two second through-holes 170a, each first through hole 160a respectively with two the second through-hole 170a it
Between distance tend to be equal.
By above-mentioned setting, the first metal layer 120 and second metal layer 140 are by each first through hole 160a and this is first logical
When fractional transmission electric current between the corresponding second through-hole 170a of hole 160a, due to each first through hole 160a respectively with two
The second through-hole 170a's is equidistant, to pass through electrically conducting transparent between the first metal layer 120 and second metal layer 140
Four parts of layer 180 carry out electric current transmission simultaneously, the resistance that bridging generates is effectively reduced, to effectively promote TFT substrate
100 are applied to the display quality when liquid crystal display device, and reduce power consumption.
It should also be noted that, in the present embodiment, the quantity for the first through hole group 160 being arranged in the TFT substrate 100
Quantity with the second sets of vias 170 can be respectively multiple, and each first through hole group 160 and second sets of vias 170 are right
It answers.
On the basis of the above, the present invention also provides a kind of liquid crystal display device, the liquid crystal display device includes above-mentioned
TFT substrate 100.
Since the liquid crystal display device includes the TFT substrate 100, the liquid crystal display device has and institute
It states that TFT substrate 100 is identical or corresponding technical characteristic, and identical or corresponding technical effect can be reached, do not go to live in the household of one's in-laws on getting married one by one herein
It states.
To sum up, a kind of TFT substrate 100 provided by the invention and liquid crystal display device, by the way that substrate 110, the first gold medal is arranged
Belong to layer 120, the first insulating layer 130, second metal layer 140, second insulating layer 150, transparency conducting layer 180 and including multiple the
The first through hole group 160 of one through-hole 160a and the second sets of vias 170 including at least one the second through-hole 170a, each described
One through-hole 160a is correspondingly arranged with the second through-hole 170a described at least one, and the transparency conducting layer 180 is logical by described first
Hole 160a is connect with the first metal layer 120, and is connected by the second through-hole 170a and the second metal layer 140
It connects, so that parallel connection is realized in the part between each first through hole 160a and corresponding second through-hole 170a, thus in the first metal layer
By the multiple portions of transparency conducting layer 180 carry out electric current transmission simultaneously between 120 and second metal layer 140 be effectively reduced across
It practices midwifery raw resistance, and then effectively promotes display quality and reduction of the TFT substrate 100 applied to the liquid crystal display device when
Power consumption.
Obviously, those skilled in the art should be understood that the function of the above-mentioned embodiment of the present invention can use general meter
Device is calculated to realize, they can be concentrated on a single computing device, or be distributed in net constituted by multiple computing devices
On network, optionally, they can be realized with the executable existing program code of computing device or algorithm, it is thus possible to by it
Store and be performed by computing device in the storage device, perhaps they are fabricated to each integrated circuit modules or
Single integrated circuit module is maked multiple modules or steps in them to realize.In this way, functions implementing the present invention are not
Any specific hardware and software is limited to combine.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of TFT substrate characterized by comprising
Substrate, the first metal layer for being set to the substrate；
It is covered in the first insulating layer of the first metal layer；
It is set to second metal layer and the covering second metal layer of first insulating layer far from the first metal layer side
Second insulating layer；
First through hole group including multiple first through hole and the second sets of vias including at least one the second through-hole, each described
One through-hole is correspondingly arranged with the second through-hole described at least one；Wherein: the first through hole is from the first metal layer far from institute
The side for stating substrate is through to side of the second insulating layer far from first insulating layer, and second through-hole is from described
Two metal layers are through to side of the second insulating layer far from the second metal layer far from the side of first insulating layer；
The transparency conducting layer to be formed is made based on the second insulating layer, the transparency conducting layer passes through the first through hole and institute
The first metal layer connection is stated, and is connect by second through-hole with the second metal layer, the first metal layer and the
Fractional transmission of two metal layers by the transparency conducting layer between first through hole and corresponding second through-hole of the first through hole
Electric current.
2. TFT substrate according to claim 1, which is characterized in that each first through hole is successively spaced along first direction
Setting, second through-hole is multiple and successively interval setting in a second direction, the first direction and the second direction are flat
Row.
3. TFT substrate according to claim 2, which is characterized in that each first through hole is logical with one described second
Hole is corresponding, and each first through hole is equal with the distance between corresponding second through-hole.
4. TFT substrate according to claim 3, which is characterized in that two institutes of arbitrary neighborhood in the first through hole group
It is equal to state the distance between first through hole.
5. TFT substrate according to claim 1, which is characterized in that the first through hole that first through hole group includes is two, institute
Stating the second through-hole that the second sets of vias includes is two, and two first through hole and two second through-holes are positioned at same
Straight line, and two second through-holes are located between two first through hole.
6. TFT substrate according to claim 5, which is characterized in that each second through-hole to corresponding first through hole it
Between be equidistant.
7. TFT substrate according to claim 1, which is characterized in that the first through hole that first through hole group includes is two, institute
Stating the second through-hole that the second sets of vias includes is one, and second through-hole is to the distance between two first through hole phase
Deng.
8. TFT substrate according to claim 7, which is characterized in that second through-hole and two first through hole positions
In same straight line.
9. TFT substrate described in claim 1, which is characterized in that the first through hole group includes two first through hole, and described the
Two sets of vias include two the second through-holes, and each first through hole is equal with the distance between two second through-holes respectively.
10. a kind of liquid crystal display device, which is characterized in that including TFT substrate described in any one of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811328899.4A CN109143709A (en) | 2018-11-09 | 2018-11-09 | TFT substrate and liquid crystal display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811328899.4A CN109143709A (en) | 2018-11-09 | 2018-11-09 | TFT substrate and liquid crystal display device |
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| CN109143709A true CN109143709A (en) | 2019-01-04 |
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| CN201811328899.4A Pending CN109143709A (en) | 2018-11-09 | 2018-11-09 | TFT substrate and liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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