CN109112500B - Cvd复合材料耐火涂层及其应用 - Google Patents
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Abstract
本发明题为“CVD复合材料耐火涂层及其应用”。本发明在一个方面提供了包含耐磨涂层的制品,所述耐磨涂层采用包括不同组合物和相的耐火层的复合结构。简而言之,被涂覆的制品包括基底和通过化学气相沉积法(CVD)沉积而附着到所述基底的涂层,所述涂层包括内部耐火层和外部氧化锆层或外部多相耐火层,所述内部耐火层包含M1‑xAlxN,其中x≥0.7,并且M为钛、铬或锆,所述外部多相耐火层包括氧化铝相和包含至少一种IVB族金属的氧化物相,其中所述M1‑xAlxN具有小于15重量%的六角相。
Description
技术领域
本发明涉及耐火涂层,并且具体地讲,涉及通过化学气相沉积法(CVD)沉积以用于切削工具和/或磨损应用的复合材料耐火涂层。
背景技术
切削工具(包括烧结碳化物切削工具)已用于涂覆涂层的和未涂覆涂层的条件两者中以便加工各种金属和合金。为了提高切削工具耐磨性、性能和寿命,已将一层或多层耐火材料施加于切削工具表面。已通过CVD并通过物理气相沉积法(PVD)将例如TiC、TiCN、TiN和/或Al2O3施加于烧结碳化物基底。虽然在多种应用中能有效抑制磨损并延长工具寿命,但基于上述耐火材料的单层或多层构造的耐火涂层已日益达到其性能极限,从而要求开发用于切削工具的新涂层结构。
发明内容
在一个方面,描述了包括耐磨涂层的制品,所述耐磨涂层采用包含不同组合物和相的耐火层的复合结构。简而言之,被涂覆的制品包括基底和通过化学气相沉积法(CVD)沉积而附着至基底的涂层,所述涂层包括内部耐火层和外部氧化锆层或外部多相耐火层,所述内部耐火层包含M1-xAlxN,其中x≥0.7,并且M为钛、铬或锆,所述外部多相耐火层包括氧化铝相和包含至少一种IVB族金属的氧化物相,其中M1-xAlxN具有小于15重量%的六角相。
在一些实施方案中,IVB族金属为锆,从而得到均匀或不均匀地分散在氧化铝相中的氧化锆相。这些和其他实施方案在下文的具体实施方式中进一步描述。
具体实施方式
参考以下具体实施方式和实施例以及前述和下述内容可更容易地理解本文所述的实施方案。然而,本文所述的元素、设备和方法并不限于具体实施方式和实施例中所述的具体实施方案。应当认识到,这些实施方案仅示例性地说明本发明的原理。在不脱离本发明实质和范围的情况下,多种修改和变更对于本领域技术人员而言将是显而易见的。
在一个方面,本文所述的被涂覆的制品包括基底和通过化学气相沉积法(CVD)沉积而附着到基底的涂层,所述涂层包括内部耐火层和外部多相耐火层,所述内部耐火层包含M1-xAlxN,其中x≥0.7,并且M为钛、铬或锆,所述外部多相耐火层包括氧化铝相和包含至少一种IVB族金属的氧化物相,其中M1-xAlxN具有小于15重量%的六角相。
现在转到具体的组成部分,被涂覆的制品包括基底。被涂覆的制品可包括不违背本发明目的的任何基底。例如,基底可为切削工具或用于磨损应用中的工具。切削工具包括但不限于可转位切削刀片、端铣刀或钻孔器。可转位切削刀片可具有用于铣削或车削应用的任何所需ANSI标准几何形状。本文所述的被涂覆的制品的基底可由烧结碳化物、碳化物、陶瓷、金属陶瓷、钢或其他合金形成。在一些实施方案中,烧结碳化物基底包含碳化钨(WC)。WC可以至少约80重量%的量或以至少约85重量%的量存在于切削工具基底中。另外,烧结碳化物的金属粘结剂可包含钴或钴合金。钴例如可以1重量%至15重量%范围内的量存在于烧结碳化物基底中。在一些实施方案中,钴以5-12重量%或6-10重量%范围内的量存在于烧结碳化物基底中。此外,烧结碳化物基底可表现出始于基底表面并从基底表面向内延伸的粘结剂富集区。
烧结碳化物基底还可包含一种或多种添加剂,诸如下列元素和/或其化合物中的一种或多种:钛、铌、钒、钽、铬、锆和/或铪。在一些实施方案中,钛、铌、钒、钽、铬、锆和/或铪与基底的WC形成固溶体碳化物。在此类实施方案中,基底可以0.1-5重量%范围内的量包含一种或多种固溶体碳化物。另外,烧结碳化物基底可包含氮。
如本文所述,附着到基底的CVD涂层包括包含M1-xAlxN的内部耐火层,其中x≥0.7并且M为钛、铬或锆。在一些实施方案中,本文所述的M1-xAlxN耐火层的x具有选自表I的值。
表I-M1-xAlxN的Al含量(at.%)
x在M<sub>1-x</sub>Al<sub>x</sub>N中的值 |
0.7-0.9 |
0.75-0.9 |
0.8-0.9 |
0.85-0.9 |
内部耐火层的M1-xAlxN表现出小于约15重量%的量的六角相含量。在一些实施方案中,内部耐火层的M1-xAlxN具有根据表II的六角相含量。
表II-M1-xAlxN的六角相含量(重量%)
≤10 |
≤5 |
0.5-15 |
0.5-10 |
5-10 |
0.5-5 |
包含M1-xAlxN的内部耐火层可具有不违背本发明目的的任何厚度。例如,内部耐火层可具有0.5μm至10μm或2μm至8μm的厚度。在一些实施方案中,包含M1-xAlxN的内部耐火层具有大于5μm的厚度。例如,具有本文所述构造、包括选自表I的x值和选自表II的六角相含量的内部耐火层可具有选自表III的厚度。
表III-耐火层厚度(μm)
本文所述的耐火层厚度可在切削工具的侧翼表面上测量。
在一些实施方案中,内部耐火层的M1-xAlxN可具有层状结构,该层状结构包括厚度通常小于200nm的薄片。在一些实施方案中,单独的薄片的厚度可在5nm至150nm的范围内。在一些实施方案中,层状结构的薄片厚度为10nm至200nm。薄片在M1-xAlxN层的厚度上可表现出基本上均匀的组成。作为另外一种选择,在M1-xAlxN层的厚度上薄片组成可以是变化的。例如,铝含量可在薄片之间变化,从而在M1-xAlxN层中建立一个或多个铝梯度。铝含量可在M1-xAlxN层上周期性或非周期性地变化,前提条件是x的平均值为至少0.7。在一些实施方案中,当没有形成薄片时存在铝的组成梯度。
在另外的实施方案中,包含M1-xAlxN的内部耐火层可表现出多层构造。例如,内部耐火层可包括M1-xAlxN的子层。M1-xAlxN的子层可具有不违背本发明目的的任何期望厚度。在一些实施方案中,M1-xAlxN子层具有10nm至500nm的单独厚度。在其它实施方案中,M1-xAlxN子层的厚度可大于100nm且小于1μm。M1-xAlxN子层可以足以实现本文表III中提供的厚度值的数量存在。另外,在子层之间可存在成分梯度,前提条件是子层群集上x的平均值为至少0.7。
在一些实施方案中,包含M1-xAlxN的内部耐火层直接沉积在基底上。在其它实施方案中,一个或多个粘结层可驻留在内层和基底之间。在一些实施方案中,一个或多个粘结层包含选自铝和周期表的IVB族、YB族和VIB族的金属元素中的一种或多种金属元素以及选自周期表的IIIA族、IVA族、VA族和VIA族中的一种或多种非金属元素。在一些实施方案中,基底和内部M1-xAlxN耐火层之间的一个或多个粘结层包含选自铝以及周期表的IVB族、VB族和VIB族的金属元素中的一个或多个金属元素的碳化物、氮化物、碳氮化物、氧碳氮化物、氧化物或硼化物。
例如,一个或多个粘结层选自氮化钛、碳氮化钛、氧碳氮化钛、碳化钛、氮化锆、碳氮化锆、氮化铪和碳氮化铪。涂层的一个或多个粘结层可具有不违背本发明目的的任何厚度。在一些实施方案中,单个粘结层的厚度可为至少0.5μm。作为另外一种选择,多个粘结层可共同实现至少1μm的厚度。
通过CVD沉积的涂层还包括外部多相耐火层,该外部多相耐火层包括氧化铝相以及包含至少一个IVB族金属的氧化物相。在一些实施方案中,氧化物相分散在氧化铝相中。例如,氧化物相可均匀地分散在氧化铝相中或不均匀地分散在氧化铝相中,从而产生一个或多个IVB族金属氧化物梯度。此外,在整个氧化铝相中,氧化物相的晶粒尺寸通常可为均匀的。作为另外一种选择,氧化物相的晶粒尺寸可随多相耐火层的厚度而变化。在一些实施方案中,氧化物相的晶粒尺寸在远离基底行进的方向上减小。在其它实施方案中,氧化物相的晶粒尺寸在远离基底行进的方向上增大。在另外的实施方案中,氧化物相仅可驻留在氧化铝相的晶粒边界处。
在一些实施方案中,氧化物相包含锆、钛或铪的单一氧化物。在其它实施方案中,氧化锆(ZrO2)、二氧化钛(TiO2)和/或二氧化铪(HfO2)的任何组合可形成氧化物相。
在具体的实施方案中,IVB族金属氧化物相包含氧化锆。氧化锆相可以不违背本发明目的的任何量存在于多相耐火层中。在一些实施方案中,氧化锆相以多相耐火层的5-60重量%的量存在。在一些实施方案中,氧化锆相以选自表IV的量存在。
表IV-多相耐火层的ZrO2含量(重量%)
10-50 |
20-40 |
30-40 |
5-30 |
5-25 |
35-50 |
氧化锆相可主要表现出单斜晶体结构。在一些实施方案中,氧化锆相包含单斜晶相和四方晶相的混合物。例如,氧化锆相可包含60-99.9%的单斜晶相,其余的为四方晶相。在其它实施方案中,四方晶相以1-35%或5-30%的量存在于氧化锆相中。在其它实施方案中,氧化锆相包含1-10%的四方晶相。
在一些实施方案中,氧化锆相分散在氧化铝相中。例如,氧化锆相可分散在整个氧化铝相中。在其它实施方案中,氧化锆相不均匀地分布在氧化铝相中,从而产生一种或多种氧化锆梯度。另外,氧化锆相的晶粒通常可表现出柱状形态。在一些实施方案中,例如,氧化锆晶粒具有大于1.3的纵横比,其中长轴垂直于或基本上垂直于基底。
此外,氧化锆相在刚沉积的状态中可表现出低水平的残余拉伸应力。在一些实施方案中,氧化锆相在刚沉积的状态中表现出100-400MPa的残余拉伸应力。在其它实施方案中,刚沉积的氧化锆相的拉伸应力在150-300MPa的范围内。残余应力和剪切应力由使用Chitilt Sin2ψ方法的x射线衍射参照单斜氧化锆结晶相的(002)反射测定。在Bragg衍射仪上收集数据并如上所述进行处理。
然后使用以下公式校准吸收度和透明度的峰值数据:
吸收度校准
透明度校准
其中:
t=层厚度
μ=线性吸收系数(cm-1)
θ=2θ/2(度)
(ω-θ)=ω偏斜角(度)
ψ=倾斜角度(Psi应力)(度)
τ=信息深度(微米)
R=测角器半径(mm)
使用以下公式校准洛仑兹偏振的峰值数据:
偏振校准
2θmon=石墨单色器的衍射角
使用Ladell模型移除kα2峰。使用皮尔逊形状轮廓函数(Pearson shape profilefunction)精修峰位置。
由以下一般公式计算剩余应力:
do=无应变时的晶格常数
ψ=样本倾斜角
σ1&σ2=样本表面的主要应力张量
S1&1/2 S2=X射线弹性常数
对于本发明的氧化锆分析,将泊松比(υ)设定为0.23,并且弹性模量(E,以GPa计)根据文献被确定为220。
氧化铝相可以不违背本发明目的的任何量存在于多相耐火层中。在一些实施方案中,氧化铝相是多相耐火层的主要相。例如,氧化铝相可以多相耐火层的55-95重量%的量存在。
作为另外一种选择,氧化铝相以小于氧化物相的量存在。根据CVD条件,氧化铝相可为α-氧化铝、κ-氧化铝或其混合物(α/κ)。此外,氧化铝相可掺杂有锆、钛和/或铪。在一些实施方案中,IVB族金属以氧化铝相的0.1至5重量%的量存在氧化铝相中。IVB族金属也可以选自表V的量存在于氧化铝相中。
表V-IVB族掺杂物(氧化铝相的重量%)
0.5-30 |
1-15 |
2-10 |
5-20 |
存在于氧化铝相中的IVB族金属掺杂物必然改变氧化铝晶格。通过掺入IVB族金属掺杂物而改变氧化铝晶格通过XRD得以证实。
类似于氧化锆相,氧化铝相的晶粒也可表现出长轴垂直于或基本上垂直于基底的柱状形态。此外,氧化铝相在刚沉积的状态中可表现出较低的残余拉伸应力。在一些实施方案中,氧化铝相在刚沉积的状态中具有200-600MPa或250-500MPa的残余拉伸应力。氧化铝相的残余应力可使用Chi tilt Sin2ψ方法参照(116)反射来确定。对于氧化铝相分析,将泊松比(υ)设定为0.19,并通过纳米压痕硬度根据对单相α氧化铝涂层的分析确定弹性模量(E,以GPa计)为415。
使用Rietveld法执行对CVD涂层的M1-xAlxN、氧化铝和IVB族金属氧化物相的定量分析。使用Bragg衍射仪收集数据并如上所述进行处理。在进行Rietveld分析时,辨别所收集模式中的所有相并针对每个相选择结构数据。为了保持Rietveld分析一致,使用相同的结构数据来进行涂层的所有分析。所用的结构数据取自ICDD PDF4 2015数据库。所用的结构数据来自以下卡:
04-001-7278氧化锆(四方晶相)
04-004-4339氧化锆(单斜晶相)
04-006-0204氧碳氮钛
03-065-9875碳氮化钛
04-006-9359氧化铝(α)
04-012-6907氧化铝(κ)
04-016-3697碳化钨
M1-xAlxN和其它IVB族金属氧化物的附加卡可从ICDD数据库获得。在Rietveld精修中,对针对以下项所收集的数据的参数进行校准:
样本位移
零点漂移
使用Chebyshev轮廓Rietveld精修参数为每个相描摹背景,所述精修参数为:
缩放系数
晶格参数
Caglioti V
Caglioti W
使用球谐函数校准图案中的任何取向。
为了确保Rietveld精修的正确性,需要精修样品中的所有相。继续精修,直到达到至少0.9(90%)的良好贴合度。一旦精修完成,就将除复合层中的相之外的所有相从精修中移除,并将复合层相归一化至100%。
外部多相耐火层可具有不违背本发明目的的任何厚度。在一些实施方案中,包含氧化铝和氧化物相的外部多相耐火层具有0.1μm-15μm的厚度。外部多相耐火层的厚度可选自表VI。
表III-外部多相耐火层厚度(μm)
0.5-10 |
1-5 |
5-10 |
0.1-5 |
在一些实施方案中,外部多相层包含氧化铝、氧化锆和/或其它金属氧化物的子层。例如,包含氧化铝和氧化物相的多相子层可与氧化铝和/或氧化锆或其它过渡金属氧化物的子层交替。多相子层可具有不违背本发明目的的任何厚度。在一些实施方案中,多相子层具有10nm至500nm的单独厚度。类似地,氧化铝、氧化锆或其它金属氧化物的子层各自的厚度可为10nm至500nm。多相子层可与氧化铝、氧化锆或其它金属氧化物的子层周期性地交替。在其它实施方案中,多相子层与氧化铝、氧化锆或其它金属氧化物的子层可以非周期性的方式交替。
在另外的实施方案中,多相耐火层被氧化锆层取代。在此类实施方案中,氧化锆耐火层可包含60-99.9%的单斜晶相,其余的为四方晶相。在其它实施方案中,四方晶相以1-35%或5-30%的量存在于氧化锆相中。
氧化锆耐火层也可具有选自本文的表VII的厚度。
在一些实施方案中,外部多相耐火层或氧化锆层直接沉积在包含M1-xAlxN的内部耐火层上。作为另外一种选择,本文所述的涂层还可包括在多相耐火层和包含M1-xAlxN的中间层之间的一个或多个中间层。在一些实施方案中,一个或多个中间层包含选自铝和周期表的IVB族、VB族和VIB族的金属元素中的一种或多种金属元素以及选自周期表的IIIA族、IVA族、VA族和VIA族中的一种或多种非金属元素。在一些实施方案中,一个或多个中间层包含选自铝及周期表的IVB族、VB族和VIB族的金属元素中的一种或多种金属元素的碳化物、氮化物、碳氮化物、氧碳氮化物、氧化物或硼化物。
例如,一个或多个中间层选自氮化钛、碳氮化钛、氧碳氮化钛、碳化钛、氮化锆、碳氮化锆、氮化铪和碳氮化铪。涂层的一个或多个中间层可具有不违背本发明目的的任何厚度。在一些实施方案中,单个中间层的厚度可为至少1.5μm。作为另外一种选择,多个中间层可共同实现至少1.5μm的厚度。
外部多相耐火层或氧化锆层可为涂层的最外层。作为另外一种选择,本文所述的涂层可包括在多相耐火层或氧化锆上的一个或多个最外层。一个或多个最外层可包含选自铝和周期表的IVB族、VB族和VIB族的金属元素中的一种或多种金属元素以及选自周期表的IIIA族、IVA族、VA族和VIA族中的一种或多种非金属元素。耐火层上的一个或多个最外层可包含选自铝和周期表的IVB族、VB族和VIB族的金属元素中的一种或多种金属元素的碳化物、氮化物、碳氮化物、氧碳氮化物、氧化物或硼化物。例如,一个或多个最外层选自氮化钛、碳氮化钛、氧碳氮化钛、碳化钛、氮化锆、碳氮化锆、氮化铪、碳氮化铪和氧化铝,以及它们的混合物。
本文所述涂层的一个或多个最外层可具有不违背本发明目的的任何厚度。在一些实施方案中,涂层最外层的厚度可在0.2μm至5μm的范围内。
如本文所述,包含M1-xAlxN的内部耐火层通过CVD沉积。因此,当M为钛时,内部耐火层通常可由包含氯化钛、氯化铝和氨的气体混合物沉积而成。在一些实施方案中,包含Ti1- xAlxN的内部耐火层根据表VII中的参数进行沉积。
表VII-Ti1-xAlxN的CVD参数
多相耐火层也通过CVD沉积。多相耐火层可由H2、N2、CO2、HCl、AlCl3、ZrCl4和H2S的气体混合物沉积而成。AlCl3和ZrCl4可在多相耐火层的引发和生长期间被同时引入沉积室中。在多相耐火层成核期间ZrCl4的存在不同于其中首先使氧化铝层成核随后在氧化铝层生长期间引入ZrCl4的现有技术。本发明的CVD方法还有别于其中氧化铝和氧化锆层以分层形式彼此独立地生长的现有技术。在一些实施方案中,AlCl3和ZrCl4在单独的发生器中于350-400℃下由金属切屑和HCl形成。用于沉积多相耐火层的一般CVD处理参数提供于表VIII中。
表VIII-多相耐火层CVD处理参数
用于各粘结层和/或中间层的一般CVD沉积参数提供于表IX中。
表IX-用于粘结层/中间层沉积的CVD参数
基层组成 | 气体混合物 | 温度℃ | 压力毫巴 | 持续时间分钟 |
TiN | H<sub>2</sub>,N<sub>2</sub>,TiCl<sub>4</sub> | 800-900 | 60-100 | 10-90 |
MT-TiCN | H<sub>2</sub>、N<sub>2</sub>、TiCl<sub>4</sub>、CH<sub>3</sub>CN | 750-900 | 65-100 | 50-400 |
HT-TiCN | H<sub>2</sub>,N<sub>2</sub>,TiCl<sub>4</sub>,CH<sub>4</sub> | 900-1050 | 60-160 | 30-200 |
TiOCN | H<sub>2</sub>、N<sub>2</sub>、TiCl<sub>4</sub>、CH<sub>4</sub>、CO | 900-1050 | 200-550 | 30-70 |
在一些实施方案中,用于粘结层或中间层沉积的前述一般CVD参数可被应用于沉积一个或多个最外层。
本文所述的涂层可经受涂布后处理。例如可将涂层用各种湿和/或干颗粒组合物喷射。涂布后喷射可以任何所需的方式实施。在一些实施方案中,涂布后喷射包括喷丸处理或压力喷射。压力喷射可以多种形式实施,包括压缩空气喷射、湿压缩空气喷射、加压液体喷射、湿喷射和蒸汽喷射。湿喷射例如使用无机和/或陶瓷颗粒(诸如氧化铝)和水的浆液实现。可将糊状的颗粒以气动方式投射在经涂布的切削工具主体的表面处以冲击涂层的表面。无机和/或陶瓷颗粒的尺寸通常可在约20μm与约100μm之间的范围内。
喷射参数包括压力、冲击角度、与部件表面的距离和持续时间。在一些实施方案中,冲击角度可在约10度至约90度的范围内,即,颗粒以约10度至约90度范围内的角度冲击涂层表面。在与被涂覆的表面相距1-6英寸时,合适的压力可在30-55磅每平方英寸(psi)的范围内。此外,喷射的持续时间通常可在1至10秒或更长的范围内。喷射通常可在涂层的表面区域上实施,或可施加到精选的位置,诸如在切削工具的工件接触区中。工件接触区可以是切削工具的磨光区。
在其他实施方案中,涂层经受抛光涂布后处理。
可用适当金刚石或陶瓷磨粒尺寸的糊剂实施抛光。在一些实施方案中,糊剂的磨粒尺寸在1μm至10μm的范围内。在一个实施方案中,使用5-10μm金刚石磨粒糊剂对涂层抛光。此外,可通过不违背本发明目的的任何设备诸如刷子,将磨粒糊剂施加到CVD涂层。在一个实施方案中,例如,使用扁平刷将磨粒糊剂施加到切削工具的工件接触区中的CVD涂层。
可将本文所述的涂层喷射或抛光足以实现所需的表面粗糙度(Ra)和/或其他参数(诸如降低涂层中的残余拉伸应力)的时间段。在一些实施方案中,经受涂布后处理的涂层的表面粗糙度(Ra)选自表X。
表X-涂布后表面粗糙度(Ra)
涂层表面粗糙度(R<sub>a</sub>)-nm |
≤500 |
≤250 |
<200 |
10-250 |
50-175 |
25-150 |
此外,在一些实施方案中,涂布后处理不移除涂层的一个或多个最外层。在一些实施方案中,例如,涂布后处理不移除TiN、TiCN和/或TiOCN的最外层。作为另外一种选择,涂布后处理可移除或部分地移除一个或多个最外层,诸如TiN、TiCN和TiOCN。
针对实现本发明多个目的,现已描述了本发明的多个实施方案。应当认识到,这些实施方案仅示例性地说明本发明的原理。在不脱离本发明实质和范围的情况下,其多种修改和变更对于本领域技术人员而言将是显而易见的。
Claims (20)
1.一种被涂覆的制品,包括:
基底;和
涂层,所述涂层通过化学气相沉积法(CVD)沉积而附着到所述基底,所述涂层包括内部耐火层和外部多相耐火层,所述内部耐火层包含M1-xAlxN,其中x≥0.7,并且M为钛、铬或锆,所述外部多相耐火层包括氧化铝相和均匀地或不均匀地分散在所述氧化铝相中的氧化物相,所述氧化物相包括主要表现出单斜晶体结构的氧化锆,其中所述M1-xAlxN具有小于15重量%的六角相。
2.根据权利要求1所述的被涂覆的制品,其中,0.7≤x≤0.9。
3.根据权利要求1所述的被涂覆的制品,其中所述M1-xAlxN具有小于10重量%的六角相。
4.根据权利要求1所述的被涂覆的制品,其中所述M1-xAlxN具有小于5重量%的六角相。
5.根据权利要求1所述的被涂覆的制品,其中所述氧化物相不均匀地分布在所述氧化铝相中。
6.根据权利要求1所述的被涂覆的制品,其中所述氧化物相以所述多相耐火层的5-60重量%的量存在。
7.根据权利要求1所述的被涂覆的制品,其中所述氧化铝相包含α氧化铝、κ氧化铝或它们的混合物。
8.根据权利要求1所述的被涂覆的制品,其中所述氧化锆相包含单斜晶相和四方晶相的混合物。
9.根据权利要求8所述的被涂覆的制品,其中所述氧化锆相包含60-99.9%的单斜晶相。
10.根据权利要求8所述的被涂覆的制品,其中所述氧化锆相包含1-10%的四方晶相。
11.根据权利要求1所述的被涂覆的制品,其中所述内部耐火层通过一个或多个粘结耐火层附着到所述基底。
12.根据权利要求11所述的被涂覆的制品,其中所述一个或多个粘结耐火层包含选自铝和周期表的IVB族、VB族和VIB族的金属元素中的一种或多种金属元素以及周期表的IIIA族、IVA族、VA族和VIA族中的一种或多种非金属元素。
13.根据权利要求12所述的被涂覆的制品,其中所述一个或多个粘结耐火层选自TiN、AlTiN、TiC和TiCN。
14.根据权利要求1所述的被涂覆的制品,其中包含M1-xAlxN的所述内部耐火层包括铝梯度。
15.根据权利要求1所述的被涂覆的制品,其中包含M1-xAlxN的所述内部耐火层包括层状结构。
16.根据权利要求15所述的被涂覆的制品,其中所述层状结构的薄片厚度为10nm至200nm。
17.根据权利要求1所述的被涂覆的制品,其中所述基底为切削工具。
18.根据权利要求17所述的被涂覆的制品,其中所述切削工具为切削刀片或旋转切削工具。
19.根据权利要求1所述的被涂覆的制品,其中所述基底为烧结碳化物、金属陶瓷或钢。
20.根据权利要求1所述的被涂覆的制品,其中所述基底为碳化物或陶瓷。
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Families Citing this family (263)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR102762543B1 (ko) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102600229B1 (ko) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
TWI871083B (zh) | 2018-06-27 | 2025-01-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR102748291B1 (ko) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) * | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI866480B (zh) | 2019-01-17 | 2024-12-11 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR102727227B1 (ko) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP7603377B2 (ja) | 2019-02-20 | 2024-12-20 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR102782593B1 (ko) | 2019-03-08 | 2025-03-14 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR102762833B1 (ko) | 2019-03-08 | 2025-02-04 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP7598201B2 (ja) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP7612342B2 (ja) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200141931A (ko) | 2019-06-10 | 2020-12-21 | 에이에스엠 아이피 홀딩 비.브이. | 석영 에피택셜 챔버를 세정하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
KR20210010817A (ko) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
TWI851767B (zh) | 2019-07-29 | 2024-08-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210015655A (ko) | 2019-07-30 | 2021-02-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 방법 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
KR20210018761A (ko) | 2019-08-09 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR102733104B1 (ko) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11371150B2 (en) * | 2020-01-04 | 2022-06-28 | Kennametal Inc. | Coating and coated cutting tool comprising the coating |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
TW202142733A (zh) | 2020-01-06 | 2021-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 反應器系統、抬升銷、及處理方法 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR20210093163A (ko) | 2020-01-16 | 2021-07-27 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
KR102667792B1 (ko) | 2020-02-03 | 2024-05-20 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 또는 인듐 층을 포함하는 구조체를 형성하는 방법 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
KR20210103956A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
TWI855223B (zh) | 2020-02-17 | 2024-09-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR102775390B1 (ko) | 2020-03-12 | 2025-02-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
KR102755229B1 (ko) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4702970A (en) * | 1987-01-20 | 1987-10-27 | Gte Laboratories Incorporated | Composite coatings on ceramic substrates |
US6040012A (en) * | 1997-08-29 | 2000-03-21 | Commissariat A L'energie Atomique | Process for the preparation by chemical vapor deposition (CVD) of a Ti-A1-N based multilayer coating |
CN101970717A (zh) * | 2008-03-12 | 2011-02-09 | 钴碳化钨硬质合金公司 | 涂覆有硬质材料的本体 |
CN104169460A (zh) * | 2012-03-14 | 2014-11-26 | 倍锐特有限责任公司 | 盖覆的坯体以及用于盖覆坯体的方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2736982A1 (de) | 1977-08-17 | 1979-03-01 | Krupp Gmbh | Verschleisschutzschicht fuer formteile und verfahren zu ihrer herstellung |
US4240871A (en) | 1979-05-17 | 1980-12-23 | Diamond International Corporation | Paper forming roll construction |
US4701384A (en) * | 1987-01-20 | 1987-10-20 | Gte Laboratories Incorporated | Composite coatings on cemented carbide substrates |
JP2999346B2 (ja) | 1993-07-12 | 2000-01-17 | オリエンタルエンヂニアリング株式会社 | 基体表面被覆方法及び被覆部材 |
SE502223C2 (sv) | 1994-01-14 | 1995-09-18 | Sandvik Ab | Sätt och alster vid beläggning av ett skärande verktyg med ett aluminiumoxidskikt |
CA2149567C (en) * | 1994-05-31 | 2000-12-05 | William C. Russell | Coated cutting tool and method of making same |
JPH09125249A (ja) * | 1995-11-07 | 1997-05-13 | Hitachi Tool Eng Ltd | 被覆超硬合金工具 |
FR2745299B1 (fr) | 1996-02-27 | 1998-06-19 | Centre Nat Rech Scient | Procede de formation de revetements de ti1-xalxn |
US6660371B1 (en) | 1998-09-24 | 2003-12-09 | Widia Gmbh | Composite material coating and a method for the production thereof |
DE10017909B4 (de) | 1999-04-13 | 2009-07-23 | Mitsubishi Materials Corp. | Beschichtetes Sinterkarbid-Schneidwerkzeugelement |
SE519108C2 (sv) * | 1999-05-06 | 2003-01-14 | Sandvik Ab | Belagt skärverktyg för bearbetning av grått gjutjärn |
SE521284C2 (sv) | 1999-05-19 | 2003-10-21 | Sandvik Ab | Aluminiumoxidbelagt skärverktyg för metallbearbetning |
US6572991B1 (en) | 2000-02-04 | 2003-06-03 | Seco Tools Ab | Deposition of γ-Al2O3 by means of CVD |
JP2001341008A (ja) | 2000-06-02 | 2001-12-11 | Hitachi Tool Engineering Ltd | 窒化チタンアルミニウム膜被覆工具及びその製造方法 |
DE10115390A1 (de) * | 2000-12-22 | 2002-06-27 | Mitsubishi Materials Corp Toki | Beschichtetes Schneidwerkzeug |
JP4398224B2 (ja) | 2003-11-05 | 2010-01-13 | 住友電工ハードメタル株式会社 | 耐摩耗性部材 |
EP1536041B1 (en) * | 2003-11-25 | 2008-05-21 | Mitsubishi Materials Corporation | Coated cermet cutting tool with a chipping resistant, hard coating layer |
CN101080295B (zh) | 2004-12-14 | 2010-08-18 | 住友电工硬质合金株式会社 | 被覆切削工具 |
JP4645983B2 (ja) * | 2005-04-12 | 2011-03-09 | 三菱マテリアル株式会社 | 硬質被覆層が高速断続切削加工ですぐれた耐チッピング性を発揮する表面被覆サーメット製切削工具 |
DE102005032860B4 (de) | 2005-07-04 | 2007-08-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hartstoffbeschichtete Körper und Verfahren zu deren Herstellung |
JP2008126334A (ja) | 2006-11-17 | 2008-06-05 | Mitsubishi Heavy Ind Ltd | 耐摩耗性皮膜およびこれを備えた工具 |
DE102007000512B3 (de) * | 2007-10-16 | 2009-01-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hartstoffbeschichtete Körper und Verfahren zu deren Herstellung |
US7597511B2 (en) * | 2007-12-28 | 2009-10-06 | Mitsubishi Materials Corporation | Surface-coated cutting tool with hard coating layer having excellent abrasion resistance |
DE102009046667B4 (de) * | 2009-11-12 | 2016-01-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beschichtete Körper aus Metall, Hartmetal, Cermet oder Keramik sowie Verfahren zur Beschichtung derartiger Körper |
JP6024981B2 (ja) * | 2012-03-09 | 2016-11-16 | 三菱マテリアル株式会社 | 高速断続切削加工で硬質被覆層がすぐれた耐チッピング性を発揮する表面被覆切削工具 |
US9181620B2 (en) * | 2013-03-21 | 2015-11-10 | Kennametal Inc. | Coatings for cutting tools |
CN108291300B (zh) | 2015-11-25 | 2020-09-08 | 三菱日立工具株式会社 | 氮化钛铝硬质皮膜、硬质皮膜包覆工具及它们的制造方法 |
US10273575B2 (en) * | 2016-08-31 | 2019-04-30 | Kennametal Inc. | Composite refractory coatings and applications thereof |
-
2018
- 2018-05-24 CN CN201810506451.0A patent/CN109112500B/zh active Active
- 2018-05-25 DE DE102018112535.6A patent/DE102018112535B4/de active Active
- 2018-06-22 US US16/015,618 patent/US10968512B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4702970A (en) * | 1987-01-20 | 1987-10-27 | Gte Laboratories Incorporated | Composite coatings on ceramic substrates |
US6040012A (en) * | 1997-08-29 | 2000-03-21 | Commissariat A L'energie Atomique | Process for the preparation by chemical vapor deposition (CVD) of a Ti-A1-N based multilayer coating |
CN101970717A (zh) * | 2008-03-12 | 2011-02-09 | 钴碳化钨硬质合金公司 | 涂覆有硬质材料的本体 |
CN104169460A (zh) * | 2012-03-14 | 2014-11-26 | 倍锐特有限责任公司 | 盖覆的坯体以及用于盖覆坯体的方法 |
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US20180371610A1 (en) | 2018-12-27 |
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CN109112500A (zh) | 2019-01-01 |
DE102018112535A1 (de) | 2018-12-27 |
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