CN109103310A - A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect - Google Patents
A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 99
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000000694 effects Effects 0.000 title claims description 18
- 230000001737 promoting effect Effects 0.000 title claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
- 239000010980 sapphire Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000000903 blocking effect Effects 0.000 claims abstract 2
- 239000011777 magnesium Substances 0.000 claims description 35
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 22
- 229910052733 gallium Inorganic materials 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 238000005915 ammonolysis reaction Methods 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 230000001413 cellular effect Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 4
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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Abstract
一种提升氮化镓基LED发光二极管抗静电能力的外延片及生长方法，该外延片结构从下向上依次为蓝宝石图形化AlN衬底、未掺杂的低温氮化镓缓冲层、未掺杂的高温氮化镓层、掺SiH4的N型氮化镓导电层、有源发光层、低温掺Mg的P型氮化铝镓电子阻挡层、掺Mg的P型氮化镓导电层和掺Mg的P型接触层。本发明提出了量子垒层采用调制掺杂的GaN/AlGaN超晶格结构，这种结构能够有效的引导冲击电流，使脉冲电流在GaN/AlGaN结构的二维电子气中，在横向方向上传导，使得脉冲电流的密度分布更加均匀，从而使LED芯片被击穿的可能性得到很大的降低，为有效提升氮化镓基发光二极管的抗静电能力提供了一种外延片生长方法。
An epitaxial wafer and a growth method for improving the antistatic ability of gallium nitride-based LED light-emitting diodes. The epitaxial wafer structure is a sapphire patterned AlN substrate, an undoped low-temperature gallium nitride buffer layer, and an undoped High-temperature gallium nitride layer, N-type gallium nitride doped with SiH 4 conductive layer, active light-emitting layer, low-temperature Mg-doped P-type aluminum gallium nitride electron blocking layer, Mg-doped P-type gallium nitride conductive layer and doped P-type contact layer of Mg. The present invention proposes that the quantum barrier layer adopts a modulation-doped GaN/AlGaN superlattice structure, which can effectively guide the impulse current and make the pulse current conduct in the lateral direction in the two-dimensional electron gas of the GaN/AlGaN structure , so that the density distribution of the pulse current is more uniform, so that the possibility of the LED chip being broken down is greatly reduced, and an epitaxial wafer growth method is provided for effectively improving the antistatic ability of the gallium nitride-based light-emitting diode.
Description
Technical field
The invention belongs to GaN-based LED epitaxial wafers to design applied technical field, be related to a kind of promotion gallium nitride based LED hair
The epitaxial wafer and growing method of optical diode antistatic effect.
Background technique
Gallium nitride (GaN) is wide-band gap material, and resistivity is high, what GaN base LED chip generated during production, transport
Electrostatic charge is not easy to disappear, and accumulation can produce very high electrostatic potential to a certain extent.The LED chip of Sapphire Substrate is positive and negative
Electrode is located at chip the same side, spacing very little, therefore to the ability to bear very little of electrostatic, is easily failed by electrostatic breakdown, influences
The service life of device.
Traditional GaN base LED epitaxial growth structure process at present are as follows: 500 DEG C of elder generations grow on a sapphire substrate one layer it is low
Warm GaN buffer layer；It is then followed by one layer of undoped high temperature GaN of growth at 1100 DEG C；It is adulterated followed by one layer of high growth temperature
The n-type GaN layer of SiH4, this layer provide the electronics of recombination luminescence；It is then followed by 750~850 DEG C and grows several periods
The Quantum Well and quantum of GaN/InGaN builds the luminescent layer as LED, this layer is the core of GaN base LED extension；Then exist
The p-type AlGaN layer of 950 DEG C or so growth doping Mg, plays the role of stopping electronics；Finally one layer is grown at 1000 DEG C or so to mix
The p-type GaN layer of miscellaneous Mg, this layer provide the hole of recombination luminescence；It is finally annealing process.
At present in LED epitaxial process, active layer mostly uses several periodic structure GaN/InGaN Quantum Well to build area, electricity
Son and hole recombination luminescence in the relatively narrow well layer InGaN material of energy band.Since the lattice constant difference of two kinds of materials is easy to produce
Raw polarity effect, causes dislocation defects, if this defect cannot be controlled effectively, builds area across GaN/InGaN Quantum Well
Line dislocation will lead to exhibiting high surface defect, form leak channel, and then influences chip and bear antistatic ability.So effectively changing
The crystalline quality of kind active illuminating layer is extremely important to the antistatic effect for promoting LED chip.
Summary of the invention
It is an object of the present invention to for the skill faced in the development process of above-mentioned conventional gallium nitride base LED epitaxial wafer
Art problem builds structure to luminescent layer quantum and design is optimized, barrier layer is designed as to the GaN/AlGaN superlattices of modulation doping
Structure, when LED chip is by electrostatic impact, this structure can effectively guide dash current, make pulse current in GaN/
In the two-dimensional electron gas of AlGaN structure, conduct in a lateral direction, so that the Density Distribution of pulse current is more uniform, thus
A possibility that keeping LED chip breakdown, obtains very big reduction, and then effectively promotes the antistatic effect of LED chip.This hair
The epitaxial wafer and growing method of a kind of promotion gallium nitride based LED light emitting diode antistatic effect of bright proposition, epitaxial layers
Structure it is as shown in Figure 1, comprising: patterned sapphire AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped height
Warm gallium nitride layer；Mix the n type gallium nitride conductive layer of SiH4；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure is built
Area, wherein quantum barrier layer uses the GaN/AlGaN superlattice structure of modulation doping；Low temperature mixes the p-type aluminium gallium nitride alloy electronics resistance of Mg
Barrier；Mix the p-type gallium nitride conductive layer of Mg；Mix the p-type contact layer of Mg.
Technical solution of the present invention:
A kind of epitaxial wafer promoting gallium nitride based LED light emitting diode antistatic effect, the epitaxial slice structure is from bottom to top
Sequence be followed successively by patterned sapphire AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped high-temperature ammonolysis gallium
Layer；Mix SiH4N type gallium nitride conductive layer；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure builds area, wherein measuring
Sub- barrier layer uses the GaN/AlGaN superlattice structure of modulation doping；Low temperature mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg；Mix Mg
P-type gallium nitride conductive layer；Mix the p-type contact layer of Mg；
The active illuminating layer, which is replaced by InGaN Quantum Well with GaN quantum base structure, to be formed, and quantum barrier layer is using modulation
The GaN/AlGaN superlattice structure of doping, this structure can effectively guide dash current, make pulse current in GaN/
In the two-dimensional electron gas of AlGaN structure, conduct in a lateral direction, so that the Density Distribution of pulse current is more uniform, thus
A possibility that keeping LED chip breakdown, obtains very big reduction, can effectively promote the antistatic effect of LED chip.
The undoped low temperature nitride gallium buffer layer with a thickness of 20nm~40nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1500nm~3000nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2500nm~4000nm；
The active illuminating layer with a thickness of 90nm~400nm；Wherein Quantum Well builds the unit of InGaN Quantum Well in area
With a thickness of 2nm~5nm；It is 9nm~20nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, constitutes the super of quantum base
In lattice structure GaN with a thickness of 1nm~4nm, the AlGaN's of modulation doping with a thickness of 1nm~4nm in superlattice structure；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 10nm~50nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 20nm~80nm；
The p-type contact layer for mixing Mg with a thickness of 5nm~20nm；
Optimum condition:
The undoped low temperature nitride gallium buffer layer with a thickness of 25nm~30nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1800nm~2500nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2800nm~3000nm；
The active illuminating layer with a thickness of 200nm~300nm；Wherein Quantum Well builds the list of InGaN Quantum Well in area
Member is with a thickness of 3nm~4nm；It is 12nm~16nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, wherein constituting quantum
In the superlattice structure at base GaN with a thickness of 1.5nm~3nm, in superlattice structure the AlGaN of modulation doping with a thickness of
1.5nm~3nm；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 15nm~30nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 40nm~60nm；
The p-type contact layer for mixing Mg with a thickness of 10nm~15nm.
A kind of epitaxial wafer growth method promoting gallium nitride based LED light emitting diode antistatic effect, steps are as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity,
1000~1100 DEG C are toasted 8~12 minutes；
Step 2: cool to 510~560 DEG C, under the pressure of 400~600mbar, growth a layer thickness be 20nm~
The undoped low temperature nitride gallium buffer layer of 30nm；
Step 3: temperature being risen to 1010~1160 DEG C, under the pressure of 600~800mbar, growth a layer thickness is
The undoped high-temperature ammonolysis gallium layer of 1800nm~2500nm；
Step 4: being 1000~1100 DEG C in temperature, under the pressure of 500~700mbar, growth a layer thickness is
2000nm~3000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 810~860 DEG C, under the pressure of 200~500mbar, growing one layer of 1nm~3nm's
GaN, then the AlGaN of one layer of 1nm~3nm modulation doping of regrowth, alternately continuous with both this for a superlattices cellular construction
2~6 periods are grown, this continuous superlattice structure is that the quantum of active illuminating layer builds plot structure；
Step 6: when temperature is 710~760 DEG C, under the pressure of 200~500mbar, on quantum builds plot structure
The InGaN layer that a layer thickness is 2~6nm is grown, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete of active illuminating layer
Whole structure；
Step 8: when temperature is 850~900 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 15nm
The low temperature of~30nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: when temperature is 980~1000 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 40nm
The p-type gallium nitride conductive layer for mixing Mg of~60nm
Step 10: when temperature is 750~800 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 10nm
The p-type contact layer for mixing Mg of~15nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
The growing technology is metallo-organic compound chemical gaseous phase deposition (MOCVD) growth technology, and metal has
Machine source trimethyl gallium (TMGa) or triethyl-gallium (TEGa) are used as gallium source, and trimethyl indium (TMIn) is used as indium source, trimethyl aluminium
(TMAl) it is used as silicon source, N type dopant is silane (SiH4), and P-type dopant is two luxuriant magnesium (CP2Mg)；Carrier gas is high-purity H2Or/
And high-purity N2。
Beneficial effects of the present invention: more traditional growing method is different, and the present invention builds plot structure to luminescent layer quantum and carries out
Optimization design proposes the GaN/AlGaN superlattice structure that quantum barrier layer uses modulation doping, and this structure can be effective
Dash current is guided, makes pulse current in the two-dimensional electron gas of GaN/AlGaN structure, conducts in a lateral direction, so that arteries and veins
The Density Distribution for rushing electric current is more uniform, so that a possibility that keeping LED chip breakdown obtains very big reduction, effectively to be promoted
The antistatic effect of gallium nitride based light emitting diode provides a kind of epitaxial wafer growth method.
Detailed description of the invention
Fig. 1 is gallium oxide LED epitaxial wafer composed structure schematic diagram.
In figure: 1 patterned sapphire AlN substrate；2 undoped low temperature nitride gallium buffer layers；3 undoped high-temperature ammonolysis
Gallium；4 mix the n type gallium nitride conductive layer of SiH4；5 active illuminating layers are that the InGaN/GaN Quantum Well of periodic structure builds area；
5.1GaN quantum builds area；5.2 quantum well regions InGaN；5.1.1 the GaN of superlattices；5.1.2 the modulation doping of superlattices
AlGaN；6 low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg；7 mix the p-type gallium nitride conductive layer of Mg；8 mix the p-type contact of Mg
Layer.
Specific embodiment
Below in conjunction with technical solution and attached drawing, a specific embodiment of the invention is further illustrated, the present embodiment is using gold
Belong to organic compound chemical vapor deposition device (MOCVD).
Embodiment 1
A kind of epitaxial wafer growth method promoting gallium nitride based LED light emitting diode antistatic effect, including following technique
Step:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity,
1040 DEG C or so are toasted 11 minutes；
Step 2: cooling to 525 DEG C, under the pressure of 500mbar, grow the low-temperature gan layer that a layer thickness is 27nm；
Step 3: temperature being risen to 1110 DEG C, under the pressure of 750mbar, grows the high temperature that a layer thickness is 2200nm
GaN layer；
Step 4: being 1065 DEG C in temperature, under the pressure of 600mbar, grow the doping SiH4 that a layer thickness is 2700nm
N-shaped high-temperature gan layer；
Step 5: when temperature is 825 DEG C, under the pressure of 300mbar, growing the GaN of one layer of 2nm, then regrowth one
The AlGaN of layer 2nm modulation doping, with both this for a superlattices cellular construction, alternately 5 periods of continuous growth, this is continuous
Superlattice structure is that the quantum of luminescent layer builds plot structure；
Step 6: when temperature is 725 DEG C, under the pressure of 300mbar, growing a layer thickness on quantum barrier layer is
The InGaN layer of 4nm, this is the quantum well region structure of luminescent layer；
Step 7: 14 periods are alternately continuously grown in the way of step 5 and 6, this is the complete structure of luminescent layer；
Step 8: temperature be 860 DEG C when, under the pressure of 200mbar, growth one layer mix Mg with a thickness of 26nm's
AlGaN electronic barrier layer；
Step 9: temperature be 1000 DEG C when, under the pressure of 200mbar, growth one layer mix Mg with a thickness of 58nm's
GaN layer；
Step 10: temperature be 740 DEG C when, under the pressure of 300mbar, growth one layer mix Mg with a thickness of 12nm's
InGaN contact layer；
Step 11: finally annealing 20 minutes under nitrogen atmosphere.
It is analyzed through experiment contrast:
The crystalline quality of epitaxial material produced by the present invention is obviously improved: wherein the contrast test present invention and conventional method institute
The LED chip of system utilizes the anti-of LED chip produced by the present invention after the reversed electrostatic impact of 1000V, 2000V, 4000V
Electrostatic capacity percent of pass is apparently higher than conventional method about 10%, 13%, 16%.Illustrate that the crystalline quality of material improves.Compared to biography
The antistatic effect of system scheme, final LED chip improves 10%-16%.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (5)
1. a kind of epitaxial wafer for promoting gallium nitride based LED light emitting diode antistatic effect, which is characterized in that the epitaxial slice structure
Sequence from bottom to top is followed successively by patterned sapphire AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped high temperature
Gallium nitride layer；Mix SiH4N type gallium nitride conductive layer；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure builds area,
Wherein quantum barrier layer uses the GaN/AlGaN superlattice structure of modulation doping；Low temperature mixes the p-type aluminium gallium nitride alloy electronic blocking of Mg
Layer；Mix the p-type gallium nitride conductive layer of Mg；Mix the p-type contact layer of Mg；
The active illuminating layer, which is replaced by InGaN Quantum Well with GaN quantum base structure, to be formed, and quantum barrier layer uses modulation doping
GaN/AlGaN superlattice structure；
The undoped low temperature nitride gallium buffer layer with a thickness of 20nm~40nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1500nm~3000nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2500nm~4000nm；
The active illuminating layer with a thickness of 90nm~400nm；Wherein Quantum Well builds the element thickness of InGaN Quantum Well in area
For 2nm~5nm；It is 9nm~20nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, constitutes the superlattices that quantum is built
In structure GaN with a thickness of 1nm~4nm, the AlGaN's of modulation doping with a thickness of 1nm~4nm in superlattice structure；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 10nm~50nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 20nm~80nm；
The p-type contact layer for mixing Mg with a thickness of 5nm~20nm.
2. the epitaxial wafer according to claim 1 for promoting gallium nitride based LED light emitting diode antistatic effect, feature exist
In,
The undoped low temperature nitride gallium buffer layer with a thickness of 25nm~30nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1800nm~2500nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2800nm~3000nm；
The active illuminating layer with a thickness of 200nm~300nm；Wherein Quantum Well builds the units thick of InGaN Quantum Well in area
Degree is 3nm~4nm；It is 12nm~16nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, wherein constituting what quantum was built
In superlattice structure GaN with a thickness of 1.5nm~3nm, in superlattice structure the AlGaN of modulation doping with a thickness of 1.5nm~
3nm；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 15nm~30nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 40nm~60nm；
The p-type contact layer for mixing Mg with a thickness of 10nm~15nm.
3. a kind of epitaxial wafer growth method for promoting gallium nitride based LED light emitting diode antistatic effect, which is characterized in that step
It is as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity, 1000~
1100 DEG C are toasted 5~10 minutes；
Step 2: cooling to 500~550 DEG C, under the pressure of 400~600mbar, growth a layer thickness is 20nm~40nm's
Undoped low temperature nitride gallium buffer layer；
Step 3: temperature being risen to 1000~1150 DEG C, under the pressure of 600~800mbar, growth a layer thickness is 1500nm
The undoped high-temperature ammonolysis gallium layer of~3000nm；
Step 4: temperature be 1000~1100 DEG C, under the pressure of 500~700mbar, growth a layer thickness for 2500nm~
4000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 810~860 DEG C, under the pressure of 200~500mbar, the GaN of one layer of 1nm~3nm is grown,
Then the AlGaN of one layer of 1nm~3nm modulation doping of regrowth, with both this for a superlattices cellular construction, alternately continuous growth
2~6 periods, this continuous superlattice structure are that the quantum of active illuminating layer builds plot structure；
Step 6: when temperature is 700~750 DEG C, under the pressure of 200~500mbar, being grown on quantum builds plot structure
A layer thickness is the InGaN layer of 2~5nm, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete knot of active illuminating layer
Structure；
Step 8: temperature be 850~900 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 10nm~
The low temperature of 50nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: temperature be 980~1000 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 20nm~
The p-type gallium nitride conductive layer for mixing Mg of 80nm
Step 10: temperature be 750~800 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 5nm~
The p-type contact layer for mixing Mg of 20nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
4. a kind of epitaxial wafer growth method for promoting gallium nitride based LED light emitting diode antistatic effect, which is characterized in that step
It is as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity, 1000~
1100 DEG C are toasted 5~10 minutes；
Step 2: cooling to 500~550 DEG C, under the pressure of 400~600mbar, growth a layer thickness is 25nm~30nm's
Undoped low temperature nitride gallium buffer layer；
Step 3: temperature being risen to 1000~1150 DEG C, under the pressure of 600~800mbar, growth a layer thickness is 1800nm
The undoped high-temperature ammonolysis gallium layer of~2500nm；
Step 4: temperature be 1000~1100 DEG C, under the pressure of 500~700mbar, growth a layer thickness for 2800nm~
3000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 825 DEG C, under the pressure of 300mbar, growing the GaN of one layer of 2nm, then one layer of regrowth
The AlGaN of 2nm modulation doping alternately continuously grows 5 periods with both this for a superlattices cellular construction, this is continuous super
Lattice structure is that the quantum of luminescent layer builds plot structure；
Step 6: when temperature is 700~750 DEG C, under the pressure of 200~500mbar, being grown on quantum builds plot structure
A layer thickness is the InGaN layer of 3~4nm, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete knot of active illuminating layer
Structure；
Step 8: temperature be 850~900 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 15nm~
The low temperature of 30nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: temperature be 980~1000 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 40nm~
The p-type gallium nitride conductive layer for mixing Mg of 60nm
Step 10: temperature be 750~800 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 10nm~
The p-type contact layer for mixing Mg of 15nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
5. a kind of epitaxial wafer for promoting gallium nitride based LED light emitting diode antistatic effect according to claim 3 or 4 is raw
Long method, which is characterized in that the growing method uses metallo-organic compound chemical gaseous phase deposition epitaxial growth method, gold
Belong to organic source trimethyl gallium or triethyl-gallium as gallium source, trimethyl indium is as indium source, and trimethyl aluminium is as silicon source, n-type doping
Agent is silane, and P-type dopant is two luxuriant magnesium；Carrier gas is high-purity H2And/or high-purity N2。
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