CN109088000B - Organic thin film transistor and preparation method thereof - Google Patents

Abstract

The invention provides an organic thin film transistor and a preparation method thereof, belonging to the technical field of organic electronics and photoelectrons. The source and drain electrodes of the organic thin film transistor are formed on the surface of the substrate, an organic semiconductor layer is formed between the source and drain electrodes, an organic insulating layer is formed on one side of the organic semiconductor layer, which is far away from the substrate, an organic anti-sputtering layer is formed on one side of the organic insulating layer, which is far away from the organic semiconductor layer, and a grid electrode is formed on one side of the organic anti-sputtering layer, which is far away from the organic insulating layer. The preparation method of the organic thin film transistor is to form an organic insulating layer on the side of the organic semiconductor layer far away from the substrate. And forming an organic anti-sputtering layer made of a cross-linkable high polymer material on the side of the organic insulating layer far away from the organic semiconductor layer. And forming a grid electrode on one side of the organic anti-sputtering layer far away from the organic insulating layer. In the preparation process, the organic semiconductor layer and the organic insulating layer are protected through the formation of the organic anti-sputtering layer, so that the electrical property of the obtained transistor is better.

Description

A kind of organic thin film transistor and preparation method thereof

technical field

The present invention relates to the technical field of organic electronics and optoelectronics, in particular to an organic thin film transistor and a preparation method thereof.

Background technique

In recent years, Organic Thin Film Transistor (OTFT) has attracted much attention from academia and industry due to its potential applications in flexibility, large-area and low-cost active matrix display, radio frequency tags, etc. great development. Among various OTFT device architectures, the top-gate-bottom contact structure is more conducive to large-scale OTFT fabrication due to its high gate efficiency and low parasitic capacitance.

In the process of preparing an organic thin film transistor, a metal layer is deposited on the organic semiconductor layer and the organic insulating layer by vacuum evaporation, and then the second metal layer and the third oxidation barrier layer are deposited by magnetron sputtering technology. form the gate.

The direct vacuum evaporation of metal electrodes on the organic semiconductor layer and the organic insulating layer will damage the organic semiconductor layer and the organic insulating layer during the heat transfer process, and affect the performance of the transistor.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide an organic thin film transistor with better electrical performance.

Another object of the present invention is to provide a method for preparing an organic thin film transistor. During the preparation process, the organic semiconductor layer and the organic insulating layer are protected by forming an organic anti-sputtering layer, so that the obtained transistor has better electrical properties.

The present invention adopts the following technical solutions to realize:

An organic thin film transistor, comprising a substrate, a gate electrode, a source and drain electrode, an organic semiconductor layer, an organic insulating layer and an organic anti-sputtering layer made of a crosslinkable polymer material;

The source and drain are formed on the surface of the substrate, an organic semiconductor layer is formed between the source and the drain, an organic insulating layer is formed on the side of the organic semiconductor layer away from the substrate, and an organic anti-sputtering layer is formed on the side of the organic insulating layer away from the organic semiconductor layer , a gate electrode is formed on the side of the organic anti-sputtering layer far away from the organic insulating layer.

Further, in a preferred embodiment of the present invention, the above-mentioned crosslinkable polymer material includes polyacrylate, polysiloxane, polyurethane, polyethylene, polyethylene terephthalate, polybutylene terephthalate At least one of esters and polyureas.

Further, in a preferred embodiment of the present invention, the thickness of the organic anti-sputtering layer is 50-5000 nm; preferably, the thickness of the organic anti-sputtering layer is 100-3000 nm; preferably, the thickness of the organic anti-sputtering layer is 100-3000 nm For 200-2000nm.

A method for preparing an organic thin film transistor, comprising the steps of: (1) forming an organic semiconductor layer on a substrate on which source and drain electrodes are formed; (2) forming an organic insulating layer on a side of the organic semiconductor layer away from the substrate; (3), forming an organic anti-sputtering layer made of a cross-linkable polymer material on the side of the organic insulating layer far away from the organic semiconductor layer; (4), on a side of the organic anti-sputtering layer far from the organic insulating layer The gate is formed on the side.

Further, in a preferred embodiment of the present invention, the preparation method of the organic anti-sputtering layer includes: firstly coating the crosslinkable polymer material on the side of the organic insulating layer away from the organic semiconductor layer, and then applying the crosslinkable polymer material to the side of the organic insulating layer away from the organic semiconductor layer. curing of polymer materials.

Further, in a preferred embodiment of the present invention, the above-mentioned curing method may be ultraviolet curing or thermal curing.

Further, in a preferred embodiment of the present invention, before the above-mentioned coating of the crosslinkable polymer material on the side of the organic insulating layer away from the organic semiconductor layer, the step of performing surface plasma treatment on the organic insulating layer is further included.

Further, in a preferred embodiment of the present invention, after the above-mentioned curing, the step of surface-treating the organic anti-sputtering layer is further included.

Further, in a preferred embodiment of the present invention, the above-mentioned surface treatment method is as follows: ethylene carbonate or propylene glycol methyl ether acetate is placed on the surface of the organic anti-sputtering layer for 0.5-5 minutes before heat treatment.

Further, in a preferred embodiment of the present invention, the method for preparing the gate electrode includes: forming a metal layer on a side of the organic anti-sputtering layer away from the organic insulating layer, and exposing and etching the metal layer.

Compared with the prior art, the beneficial effects of the organic thin film transistor and the preparation method thereof provided by the preferred embodiment of the present invention include:

An organic anti-sputtering layer made of cross-linkable polymer material is formed between the organic insulating layer and the gate electrode. During the process of forming the gate electrode, the organic insulating layer and the organic semiconductor layer will not be damaged, so that the resulting organic thin film will not be damaged. The mobility of the transistor increases, the threshold voltage decreases, and the current ratio increases, which improves the electrical performance of the organic thin film transistor.

Description of drawings

In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and therefore do not It should be regarded as a limitation of the scope. For those of ordinary skill in the art, other related drawings can also be obtained from these drawings without creative efforts, which also belong to the protection scope of the present invention.

FIG. 1 is a schematic structural diagram of an organic thin film transistor provided by the present invention.

Icons: 100-substrate; 200-gate; 300-source and drain; 310-source; 320-drain; 400-organic semiconductor layer; 500-organic insulating layer; 600-organic anti-sputtering layer.

Detailed ways

In order to make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely below. If the specific conditions are not indicated in the examples, it is carried out according to the conventional conditions or the conditions suggested by the manufacturer. The reagents or instruments used without the manufacturer's indication are conventional products that can be purchased from the market.

The organic thin film transistor and the preparation method thereof according to the embodiments of the present invention will be specifically described below.

The preparation method of organic thin film transistor comprises the following steps:

(1) Select a substrate, such as: glass substrate, silicon substrate; or polyethylene naphthalate (PEN) substrate, polyethersulfone (PES) substrate, polyethylene terephthalate (PET) substrate, polyethylene terephthalate (PET) substrate, polyethylene naphthalate (PEN) substrate Flexible plastic substrates such as imide (PI) substrates and polyvinyl alcohol (PVA) substrates. In this embodiment, the shape and thickness of the substrate are not limited, as long as the organic thin film transistor can be prepared.

(2) Forming a source and drain on the surface of the substrate, optionally, the drain is located in the middle of the substrate, the source includes two, and the two source intervals are formed on both sides of the drain, and the drain and the two sources The poles are formed on the surface of the substrate.

In this embodiment, the source electrode and the drain electrode are made of the same material, which can be metals including gold (Au), titanium (Ti), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), tungsten ( W), molybdenum (Mo), chromium (Cr), neodymium (Nd), one or more of gold paste, silver paste, copper paste; conductive polymers; metal oxides; carbon materials including graphene, carbon nanotubes and Doped or composite; nanosilver or nanocopper. The method for forming the source and drain films includes one of magnetron sputtering, vacuum evaporation, ink jet printing, screen printing, gravure printing, chemical vapor deposition, roll-to-roll printing, micro-contact printing, and nano-imprinting. The electrode film thickness is 0.1-500 nm, optionally, the electrode film thickness is 10-300 nm, and optionally, the electrode film thickness is 20-100 nm.

Optionally, a first metal layer is formed on the surface of the substrate, and the first metal layer is patterned to form the source electrode and the drain electrode. In this embodiment, the method for forming the source and drain on the surface of the substrate is an existing method, which will not be described in detail here.

(3) An organic semiconductor layer is formed on the substrate on which the source and drain electrode layers are formed. An organic semiconductor layer is formed on the source electrode, the drain electrode, and the portion of the substrate not covered by the drain electrode and the source electrode.

Specifically, a mixed solution is prepared first, and then the mixed solution is coated on the source and drain electrodes by spin coating, spray coating, dip coating, blade coating, contact coating or slot coating, and the substrate is not In the region covered by the source electrode and the drain electrode, the obtained organic semiconductor layer has a film thickness of 5-200 nm, optionally, a film thickness of 10-100 nm, optionally, a film thickness of 15-50 nm, where the film thickness refers to is the thickness of the organic semiconductor layer formed on the source and drain electrodes and the regions of the substrate not covered by the source and drain electrodes.

In this embodiment, the mixed solution includes small organic molecules, a polymer binder and an organic solvent, wherein the small organic molecules are semiconductor molecules such as acene compounds, thiophene compounds or tetrathiafulvalene compounds, and the polymer binder The mixture is a dibenzo pentacyclic polymer compound and an aromatic amine polymer compound, and the organic solvent is one or more of tetralin, mesitylene, o-methylanisole, xylene, phenethyl ether or bromobenzene. Several blends.

(4), forming an organic insulating layer on the side of the organic semiconductor layer away from the substrate. The fluoropolymer-based insulating material is coated on the surface of the organic semiconductor layer away from the substrate by means of spin coating, spray coating, dip coating, blade coating, contact coating or slot coating.

Optionally, the film thickness of the organic insulating layer is 10-1000 nm, optionally, the film thickness is 50-800 nm, and optionally, the film thickness is 100-500 nm.

(5), forming an organic anti-sputtering layer made of a crosslinkable polymer material on the side of the organic insulating layer away from the organic semiconductor layer.

There is no organic anti-sputtering layer in the prior art, and the metal layer is directly deposited on the organic semiconductor layer and the organic insulating layer by vacuum evaporation, and then the second layer of metal layer and the third layer of oxidation barrier are deposited by magnetron sputtering technology. layer forms the gate. The direct vacuum evaporation of metal electrodes on the organic semiconductor layer and the organic insulating layer will damage the organic semiconductor layer and the organic insulating layer during the heat transfer process, and affect the performance of the transistor. At the same time, the vacuum evaporation process cannot effectively control the film thickness, and the metal layer usually formed is thick at the center point and thin at the periphery, with poor uniformity and surface coverage. The vacuum evaporation process needs to achieve a high degree of vacuum, and the vacuuming process takes time and reduces the manufacturing efficiency of the device substrate. The vacuum evaporation process is difficult to scale up, the production volume is low, and it is not easy to large-scale industrialization.

In this embodiment, an organic anti-sputtering layer is firstly coated on the surface of the organic insulating layer far away from the organic semiconductor layer, and then a metal layer is deposited directly on the surface of the organic anti-sputtering layer far from the organic insulating layer by magnetron sputtering technology, The step of depositing the metal layer by vacuum evaporation in the prior art is omitted, which can effectively solve the above problems caused by depositing the metal layer by vacuum evaporation.

At the same time, an organic anti-sputtering layer is coated on the surface of the organic insulating layer far away from the organic semiconductor layer, and then a metal layer is magnetron sputtered on the surface of the organic anti-sputtering layer far away from the organic insulating layer. Due to the arrangement of the organic anti-sputtering layer, the organic insulating layer and the organic semiconductor layer can be protected, so as to avoid damage to the organic insulating layer during the magnetron sputtering process, and improve the electrical performance of the organic thin film transistor.

In this embodiment, the crosslinkable polymer material includes at least one of polyacrylate, polysiloxane, polyurethane, polyethylene, polyethylene terephthalate, polybutylene terephthalate and polyurea kind. The polymer material of the organic anti-sputtering layer can be obtained by a cross-linking reaction of one of the raw materials, or can be obtained by a cross-linking reaction between two or more raw materials.

Wherein, the preparation method of the organic anti-sputtering layer includes: firstly coating the crosslinkable polymer material on the side of the organic insulating layer away from the organic semiconductor layer, and then curing the crosslinkable polymer material. The cross-linkable polymer material can be orthogonal to the fluoropolymer, which can speed up the curing speed of the cross-linkable polymer material.

Specifically, the crosslinkable polymer material is spin-coated on the surface of the organic insulating layer away from the organic semiconductor layer at a speed of 10-100 rpm/s, and then subjected to ultraviolet curing or thermal curing treatment after spin-coating. The specific method of thermal curing treatment is: heat treatment under the condition of 100-150° C. for 2-10 minutes. It is also possible to first irradiate ultraviolet light for 10-60s under the condition of ultraviolet lamp irradiation energy of 200-1000mJ/ ^cm2 , and then heat treatment at 100-150℃ for 2-10min to cross-link and cure the cross-linkable polymer material. The organic anti-sputtering layer is formed, which is a cross-linkable network structure, the film has good compactness and high hardness, and can protect the organic insulating layer and the organic semiconductor layer.

The thickness of the organic anti-sputtering layer is 50-5000 nm; preferably, the thickness of the organic anti-sputtering layer is 100-3000 nm; preferably, the thickness of the organic anti-sputtering layer is 200-2000 nm. If the organic anti-sputtering layer is too thin, the organic anti-sputtering layer may be broken down when the gate is set by magnetron sputtering; if the organic anti-sputtering layer is too thick, the draining voltage and draining current of the gate will be increased. When the thickness of the organic anti-sputtering layer is within the above range, the obtained organic thin film transistor has better electrical properties.

In other embodiments, before coating the crosslinkable polymer material on the side of the organic insulating layer away from the organic semiconductor layer, the step of performing surface plasma treatment on the organic insulating layer is further included. First, the surface of the organic insulating layer is subjected to plasma treatment, and then an organic anti-sputtering layer is coated on the surface of the organic insulating layer after the plasma treatment.

Improve the wettability and adhesion of the organic insulating layer, prevent the separation between the organic insulating layer film and the organic anti-sputtering layer film, and obtain better electrical properties even when the organic anti-sputtering layer is relatively thin organic thin-film transistors.

Optionally, in this embodiment, the plasma gas is one or a mixture of nitrogen gas N ₂ , helium gas He, and argon gas Ar. In this embodiment, the specific manner of the plasma treatment is as follows: the substrate provided with the organic insulating layer is placed in a plasma device to perform the plasma treatment.

In other embodiments, after curing, the step of surface treatment of the organic anti-sputtering layer is further included. The roughness of the organic anti-sputtering layer can be reduced, and the connection between the organic anti-sputtering layer and the gate electrode can be made stronger.

Specifically, ethylene carbonate or propylene glycol methyl ether acetate is left standing on the surface of the organic anti-sputtering layer for 0.5-5 minutes and then spin-dried. The ethylene carbonate or propylene glycol methyl ether acetate can dissolve the surface of the organic anti-sputtering layer, so that the The surface of the organic anti-sputtering layer is smoother, and the thickness of the organic anti-sputtering layer is reduced, which on the contrary will improve the electrical performance of the organic thin film transistor.

The organic solvent of ethylene carbonate or propylene glycol methyl ether acetate can be removed by heat treatment after standing for 0.5-5 min.

(6), forming a gate on the side of the organic anti-sputtering layer that is far from the organic insulating layer. A gate is formed on the surface of the organic anti-sputtering layer by magnetron sputtering technology. Due to the arrangement of the organic anti-sputtering layer, the organic insulating layer and the organic semiconductor layer will not be damaged during the magnetron sputtering process, and the organic insulating layer and the organic semiconductor layer are well protected, which can improve the electrical performance of the organic thin film transistor. .

In this embodiment, the material of the gate is metal, including gold (Au), titanium (Ti), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), molybdenum (Mo), chromium ( Cr), neodymium (Nd), indium tin oxide (ITO) one or more. It is deposited on the surface of the organic anti-sputtering layer by magnetron sputtering. The electrode film thickness is 5-1000 nm, optionally, the electrode film thickness is 10-500 nm, and optionally, the electrode film thickness is 20-200 nm.

Specifically, the preparation method of the gate electrode includes: forming a metal layer on a side of the organic anti-sputtering layer away from the organic insulating layer, and exposing and etching the metal layer. A metal layer is deposited on the surface of the organic anti-sputtering layer by magnetron sputtering technology, a photoresist layer is coated on the surface of the metal layer, and after exposure and development processes, etching is performed to obtain a gate electrode.

Optionally, the metal layer is patterned by etching, and then the organic anti-sputtering layer, the organic insulating layer and the organic semiconductor layer are subjected to controllable reactive ion etching by dry etching to form the OTFT device.

In other embodiments, the gate electrode, the organic anti-sputtering layer, the organic insulating layer and the organic semiconductor layer are patterned by dry etching to form the OTFT device. The methods of dry etching and etching are existing methods and will not be described in detail here.

The organic thin film transistor obtained by the above preparation method, as shown in FIG. 1 , the organic thin film transistor includes a substrate 100, a gate electrode 200, a source and drain electrode 300, an organic semiconductor layer 400, an organic insulating layer 500, and a crosslinkable polymer material. Organic anti-sputtering layer 600 . The source and drain electrodes 300 are formed on the surface of the substrate 100 , an organic semiconductor layer 400 is formed between the source and drain electrodes 300 , an organic insulating layer is formed on the side of the organic semiconductor layer 400 away from the substrate 100 , and an organic insulating layer 500 is formed on the side away from the organic semiconductor layer 400 . The organic anti-sputtering layer 600 is formed on one side, and the gate electrode 200 is formed on the side of the organic anti-sputtering layer 600 away from the organic insulating layer 500 .

Optionally, the source and drain electrodes 300 include a source electrode 310 and a drain electrode 320, the drain electrode 320 is located in the middle of the substrate 100, the source electrode 310 includes two, and the two source electrodes 310 are formed at intervals on both sides of the drain electrode 320, and the drain Both the electrode 320 and the two source electrodes 310 are formed on the surface of the substrate 100 .

Optionally, the crosslinkable polymer material includes at least one of polyacrylate, polysiloxane, polyurethane, polyethylene, polyethylene terephthalate, polybutylene terephthalate and polyurea . Optionally, the thickness of the organic anti-sputtering layer 600 is 50-5000 nm; preferably, the thickness of the organic anti-sputtering layer 600 is 100-3000 nm; preferably, the thickness of the organic anti-sputtering layer 600 is 200-2000 nm.

The mobility of the finally obtained organic thin film transistor increases, the threshold voltage decreases, and the current ratio increases, which greatly improves the electrical performance of the organic thin film transistor.

Example 1

The preparation method of organic thin film transistor comprises the following steps:

(1) Select a glass substrate, and form source and drain electrodes with a thickness of 50 nm on the surface of the glass substrate.

(2) Coat the surface of the source electrode, the drain electrode and the area of the substrate not covered by the source electrode and the drain electrode with a mixed solution composed of organic small molecules, polymer binders and organic solvents to form an organic semiconductor with a thickness of 30 nm Floor.

(3) Coating a fluoropolymer material on the surface of the organic semiconductor layer away from the substrate to form an organic insulating layer with a thickness of 300 nm.

(4) Coat the cross-linkable polymer material on the surface of the organic insulating layer away from the semiconductor layer at a speed of 25rpm/s, under the condition that the irradiation energy of the ultraviolet lamp is 400mJ/ ^cm2 , after the ultraviolet irradiation for 22s, the temperature is Heat treatment at 120° C. for 5 min to form an organic anti-sputtering layer with a thickness of 650 nm.

(5), magnetron sputtering metal layer on the surface of the organic anti-sputtering layer away from the organic insulating layer, coating a photoresist layer on the surface of the metal layer, and then exposing, developing and etching to obtain a gate, and obtain an organic thin film transistor.

Example 2

The preparation method of organic thin film transistor comprises the following steps:

(1) Select a glass substrate, and form source and drain electrodes with a thickness of 50 nm on the surface of the glass substrate.

(2) Coat the surface of the source electrode, the drain electrode and the area of the substrate not covered by the source electrode and the drain electrode with a mixed solution composed of organic small molecules, polymer binders and organic solvents to form an organic semiconductor with a thickness of 30 nm Floor.

(3) Coating a fluoropolymer material on the surface of the organic semiconductor layer away from the substrate to form an organic insulating layer with a thickness of 300 nm.

(4), performing surface plasma treatment on the organic insulating layer under the condition that the plasma gas is nitrogen.

(5) Coat the cross-linkable polymer material on the surface of the organic insulating layer that has undergone surface plasma treatment away from the semiconductor layer at a speed of 25 rpm/s, and the ultraviolet lamp irradiation energy is 400 mJ/cm ² under the condition of ultraviolet light After irradiating for 22s, heat treatment for 5min at a temperature of 120°C to form an organic anti-sputtering layer with a thickness of 600nm.

(6), magnetron sputtering metal layer on the surface of the organic anti-sputtering layer away from the organic insulating layer, coating the photoresist layer on the surface of the metal layer, and then exposing, developing and etching to obtain the gate, and obtain the organic thin film transistor.

Example 3

The preparation method of organic thin film transistor comprises the following steps:

(1) Select a glass substrate, and form source and drain electrodes with a thickness of 50 nm on the surface of the glass substrate.

(2) Coat the surface of the source electrode, the drain electrode and the area of the substrate not covered by the source electrode and the drain electrode with a mixed solution composed of organic small molecules, polymer binders and organic solvents to form an organic semiconductor with a thickness of 30 nm Floor.

(3) Coating a fluoropolymer material on the surface of the organic semiconductor layer away from the substrate to form an organic insulating layer with a thickness of 300 nm.

(4), performing surface plasma treatment on the organic insulating layer under the condition that the plasma gas is nitrogen.

(5) Coat the cross-linkable polymer material on the surface of the organic insulating layer that has undergone surface plasma treatment away from the semiconductor layer at a speed of 25 rpm/s, and the ultraviolet lamp irradiation energy is 400 mJ/cm ² under the condition of ultraviolet light After irradiating for 22 s, heat treatment for 5 min at a temperature of 120 °C. Then, the surface of the heat-treated substrate was allowed to stand for 1 min with ethylene carbonate, and then heat-treated for 5 min at a temperature of 120° C. to form an organic anti-sputtering layer with a thickness of 400 nm.

(6), magnetron sputtering metal layer on the surface of the organic anti-sputtering layer away from the organic insulating layer, coating the photoresist layer on the surface of the metal layer, and then exposing, developing and etching to obtain the gate, and obtain the organic thin film transistor.

Experimental example 1

The mobility, threshold voltage and current switching ratio of the organic thin film transistor obtained by the preparation method of the organic thin film transistor provided in Examples 1-3 were detected, and the surface roughness of the organic anti-sputtering layer was detected. Compared with Example 1, Comparative Example 1 has the same other conditions, except that the organic thin film transistor is obtained without the formation of the organic anti-sputtering layer, and the mobility, threshold voltage and current switching ratio of the organic thin film transistor obtained in Comparative Example 1 are tested. get table 1:

Table 1 Electrical properties of organic thin film transistors

It can be seen from Table 1 that, compared with Comparative Example 1, the mobility and current switching ratio of the organic thin film transistor in Example 1 are significantly improved, the threshold voltage is significantly reduced, and the electrical performance of the organic thin film transistor is better. Compared with Example 2, the organic insulating layer is subjected to surface plasma treatment, and then the organic anti-sputtering layer is formed. The mobility and current switching ratio of the obtained organic thin film transistor are improved, the threshold voltage is decreased, and the organic thin film The electrical performance of the transistor is better. Compared with Example 3, after the surface treatment of the organic anti-sputtering layer is carried out, the mobility and current switching ratio of the obtained organic thin film transistor are improved, the threshold voltage is decreased, and the electrical performance of the organic thin film transistor is better.

The above-described embodiments are some, but not all, embodiments of the present invention. The detailed descriptions of the embodiments of the invention are not intended to limit the scope of the invention as claimed, but are merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

Claims (4)

1. a preparation method of organic thin film transistor, is characterized in that, comprises the steps: (1), forming an organic semiconductor layer on the substrate on which the source and drain are formed; (2), forming an organic insulating layer on the side of the organic semiconductor layer away from the substrate; (3), forming an organic anti-sputtering layer made of a crosslinkable polymer material on the side of the organic insulating layer away from the organic semiconductor layer; (4), forming a gate on the side of the organic anti-sputtering layer away from the organic insulating layer; Also includes the step of performing surface plasma treatment on the organic insulating layer; It also includes the step of performing surface treatment on the organic anti-sputtering layer, and the surface treatment method is as follows: after ethylene carbonate or propylene glycol methyl ether acetate is allowed to stand on the surface of the organic anti-sputtering layer for 0.5-5min Heat treatment again. 2 . The preparation method according to claim 1 , wherein the preparation method of the organic anti-sputtering layer comprises: firstly coating the crosslinkable polymer material on a part of the organic insulating layer far away from the On one side of the organic semiconductor layer, the crosslinkable polymer material is cured. 3 . The preparation method according to claim 2 , wherein the curing method can be ultraviolet curing or thermal curing. 4 . 4 . The preparation method according to claim 1 , wherein the preparation method of the gate electrode comprises: forming a metal layer on a side of the organic anti-sputtering layer away from the organic insulating layer, The metal layer is exposed and etched.

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