CN109037263A - Micro- light-emitting diode display module and its manufacturing method with light-transmitting substrate - Google Patents

Abstract

The present invention is about a kind of micro- light-emitting diode display module and its manufacturing method with light-transmitting substrate.The light-transmitting substrate has good penetrability for visible light wave range.Micro- light-emitting diode display module, including a driving chip block, a light emitting diode block, a circuit board and a chromatograph.The driving chip block has multiple pixel electrodes.The light emitting diode block is set to the driving chip block, and has two semiconductor layers and multiple grooves, which is electrically connected the grade pixel electrodes, another one connects a light-transmitting substrate.The grade grooves define multiple micro- light-emitting diode pixels arranged in arrays, and respectively the groove at least penetrates the luminescent layer and the semiconductor layer, respectively the corresponding pixel electrode of micro- light-emitting diode pixel.The circuit board is electrically connected the driving chip block, which is set to the light transmission conductive layer, wherein the semiconductor layer has common electrode.

Description

Micro-light-emitting diode display module with light-transmitting substrate and manufacturing method thereof

technical field

The invention relates to a light-emitting diode, in particular to a micro-light-emitting diode display module with a light-transmitting substrate and a manufacturing method thereof.

Background technique

Traditional light emitting diodes (Light Emitting Diode, LED) are mostly used as the backlight of LCD (Liquid Crystal Device) or directly as light-emitting pixels. Applied to consumer electronic products.

In recent years, a new display technology - micro light emitting diode (Micro LED) has been developed, which mainly miniaturizes, thins, and arrays LEDs, and its size is in the order of microns. In addition to the characteristics of previous inorganic LEDs - high color saturation, high efficiency, high brightness, fast response, etc., Micro LEDs can achieve display purposes only through self-illumination without backlight when applied to display devices. It has the advantages of energy saving, simple structure, light and thin, and most importantly, micro light emitting diodes also have the characteristics of ultra-high resolution.

In addition, compared with organic light-emitting diodes, the color of micro-light-emitting diodes is easier to adjust accurately, and has a longer luminous life, higher brightness, less image retention, and better material stability, etc. advantage.

Generally, the microdisplay described in Taiwan Patent TW 201640697A or the paper "Zhao Jun Liu et al., Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology, IEEE Journal Of Selected Topics In Quantum Electronics, pp.1-5 (2009)" When light-emitting diodes are used to manufacture display modules, it is usually necessary to manufacture micro-light-emitting diodes of different colors in batches, and then transfer them to the control circuit board in batches in batches, and then use the physical deposition process to set the protective layer and electrodes, and then package them. Complete a Micro LED display module.

However, in the process of reposting micro-LEDs of different colors in batches, because each micro-LED is very small, it is not easy to transfer (pick and place) and wire bonding (Wire Bonding), resulting in poor yield rate and manufacturing Slow and costly issues.

Contents of the invention

The invention provides a micro-light-emitting diode display module with a light-transmitting substrate and a manufacturing method thereof. A plurality of micro-light-emitting diodes can be generated in an array and arranged on a driving chip block, so that the pixel electrodes on the driving chip can be individually Drive each micro-LED pixel, and use the internal structure of the micro-LED (such as a semiconductor layer) as the common electrode of multiple pixels, so that each micro-LED can be driven individually through the address control of the driver chip light up.

In addition, in order to enable the micro-light-emitting diode display module to display in full color, additional RGB (Red, Green, Blue) color layers can be provided, such as providing RGB filters or spraying quantum dots. Through this structure, a high-resolution micro-light emitting diode display module can be produced; and problems such as poor yield rate during the transfer process can be reduced.

In order to achieve the above object, the present invention provides a method for manufacturing a micro-light-emitting diode display module with a light-transmitting substrate, the method comprising the following steps: preparing a light-emitting diode wafer and a driving circuit wafer, wherein the light-emitting diode wafer Part of the region is defined as a light emitting diode block, the light emitting diode block has a first semiconductor layer, a light emitting layer, and a second semiconductor layer, the light emitting layer is provided on the first semiconductor layer and the second semiconductor layer Between, the first semiconductor layer is connected to a light-transmitting substrate, a chip-sized area of the driver circuit wafer is defined as a driver chip block, and one of the first and second semiconductor layers is N-type The semiconductor layer, the other is a P-type semiconductor layer; the light emitting diode block is etched to form a plurality of staggered grooves, wherein the grooves define a plurality of micro light emitting diode pixels arranged in a matrix, each of which The groove penetrates the second semiconductor layer and the light-emitting layer, wherein the first semiconductor layer has a common electrode corresponding to the micro-LED pixels; the light-emitting diode block and the driver chip block are joined, wherein the second semiconductor The layer is electrically connected to a plurality of pixel electrodes of the driver chip block, and each micro-light-emitting diode pixel corresponds to one of the pixel electrodes; a color layer is arranged on the light-transmitting base material, wherein the color layer is an RGB color layer.

In order to achieve the above object, the present invention provides a micro-light-emitting diode display module with a light-transmitting substrate, comprising: a driver chip block with a plurality of pixel electrodes; a light-emitting diode block located on the driver chip block, And includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a plurality of grooves, the light emitting layer is located between the first and the second semiconductor layer, the second semiconductor layer is electrically connected to the Pixel electrodes, the grooves define a plurality of micro-LED pixels arranged in a matrix, each of the grooves penetrates the second semiconductor layer and the light-emitting layer, each of the micro-light-emitting diode pixels corresponds to one of the pixel electrodes, and the first One of the second semiconductor layers is an N-type semiconductor layer, the other is a P-type semiconductor layer, and the first semiconductor layer is connected to a light-transmitting substrate, and the first semiconductor layer is interposed between the Between the light-transmitting substrate and the light-emitting layer, the first semiconductor layer has a common electrode corresponding to the micro-LED pixels; a circuit board is electrically connected to the driving chip block, and the driving circuit chip block is between Between the light-emitting diode block and the circuit board; a color layer is arranged on the light-transmitting substrate, and the light-transmitting substrate is located between the color layer and the light-emitting diode block, wherein the color layer is an RGB color layer .

Description of drawings

FIG. 1 is a schematic diagram of an LED wafer of the present invention.

FIG. 2 is a schematic diagram of the LED block of the present invention.

FIG. 3 is a schematic cross-sectional view of the LED block of the present invention.

FIG. 4 is a schematic diagram of a driving circuit wafer of the present invention.

FIG. 5 is a schematic diagram of a driver chip block of the present invention.

6A to 6I are schematic diagrams of the first embodiment and other alternative embodiments.

7A to 7L are schematic diagrams of the second embodiment and other alternative embodiments.

8A to 8G are schematic diagrams of the third embodiment and other alternative embodiments.

9A to 9H are schematic diagrams of the fourth embodiment and other alternative embodiments.

10 to 11 are schematic diagrams of the step of setting the color layer in the present invention.

Fig. 10A is a partially enlarged view of the colored layer of the present invention.

Symbol Description

110: Light-emitting diode wafer 800: Micro-light-emitting diode display module

111: LED block 810: LED wafer

120: Driver circuit wafer 811: LED block

121: Driver chip block 812: Substrate

122: Pixel electrode 813: N-type semiconductor layer

600: Micro LED display module 814: N-type doped layer

610: LED wafer 815: N-type buffer layer

611: Light-emitting diode block 816: Light-emitting layer

612: Substrate 817: P-type semiconductor layer

613: N-type semiconductor layer 818: P-type doped layer

614: N-type doped layer 819: P-type buffer layer

615: N-type buffer layer 821: Driver chip block

616: Emitting layer 830: Micro LED pixel

617: P-type semiconductor layer 831: Trench

618: P-type doped layer 832: Non-conductive glue

619: P-type buffer layer 840: Light-transmitting conductive layer

620: Driver circuit wafer 850: Conductive adhesive

621: Driver chip block 860: Circuit board

630: Micro LED pixel 900: Micro LED display module

631: Groove 910: LED Wafer

632: Non-conductive glue 911: LED blocks

640: Light-transmitting conductive layer 912: Light-transmitting substrate

650: Conductive glue 913: N-type semiconductor layer

660: Circuit board 914: N-type doped layer

700: Micro LED display module 915: N-type buffer layer

710: Light-emitting diode wafer 916: Light-emitting layer

711: LED block 917: P-type semiconductor layer

712: Substrate 918: P-type doped layer

713: N-type semiconductor layer 919: P-type buffer layer

714: N-type doped layer 920: Driver circuit wafer

715: N-type buffer layer 921: Driver chip block

716: Emitting layer 930: Micro LED pixel

717: P-type semiconductor layer 931: Trench

718: P-type doped layer 932: Non-conductive glue

719: P-type buffer layer 950: Conductive adhesive

720: Driver circuit wafer 960: Circuit board

721: driver chip block 970: protrusion

730: micro light emitting diode pixel 170: color layer

731: groove 171: pixel area

732: Non-conductive glue 172: Pixel area

740: light-transmitting conductive layer 173: pixel area

741: Light-transmitting conductive layer 180: Color layer

750: Conductive adhesive

760: circuit board

Detailed ways

The following examples illustrate possible implementations of the present invention, but are not intended to limit the protection scope of the present invention.

Please refer to FIGS. 1 to 5 , which show the LED wafer 110 , the LED block 111 , the driver circuit wafer 120 , and the driver chip block 121 that are initially prepared in the present invention. For the convenience of describing various embodiments, before the description is not explicitly stated, the LED block 111 may represent a partial area of the LED wafer 110 (also integrally connected with other parts of the LED wafer 110), or may be A block that has been cut and separated from the LED wafer 110; the driver chip block 121 may represent a part of the driver circuit wafer 120 (also integrally connected with other parts of the driver circuit wafer 120), or The driver chips are cut and separated from the driver circuit wafer 120 . Each of the driving chip blocks 121 has a plurality of pixel electrodes 122, and each of the pixel electrodes 122 can independently drive a micro LED pixel.

That is to say, when the LED block 111 is diced and separated from the LED wafer 110 or/and the driver chip block 121 is diced and separated from the driver circuit wafer 120, it can be obtained during the preparation of the LED wafer. And any time between the step of driving the circuit wafer and the step of electrically connecting the driver chip block to a circuit board.

In the present invention, when making the light-emitting diode wafer 110 and the driving circuit wafer 120, some blank areas (for example, no semiconductor layer, light-emitting layer, and pixel electrode are set in some areas) can also be reserved for subsequent electrode connection. Pad or multi-pass cutting procedures.

In addition, some lines in each figure are only used to represent imaginary lines for subsequent processes such as etching or dicing, and these lines may not actually exist.

Please refer to FIGS. 6C, 6D, 6E, 6F, 6G, and 6H, which show the first embodiment of the present invention. The manufacturing method of the micro-LED display module 600 of this embodiment includes the following steps.

Initially, an LED wafer 610 and a driving circuit wafer 620 are prepared. A partial area of the light emitting diode wafer 610 is defined as a light emitting diode block 611, and a chip-sized area of the driver circuit wafer 620 is defined as a driver chip block 621, wherein the light emitting diode block 611 has a first semiconductor layer, a light-emitting layer 616 , and a second semiconductor layer, the light-emitting layer 616 is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is connected to a substrate 612 . More specifically, one of the first and second semiconductor layers is an N-type semiconductor layer, and the other is a P-type semiconductor layer. In this embodiment, the first semiconductor layer is an N-type semiconductor layer 613 , the second semiconductor layer is a P-type semiconductor layer 617 . Wherein, the N-type semiconductor layer 613 includes an N-type doped layer 614 and an N-type buffer layer 615 , and the N-type doped layer 614 is located between the N-type buffer layer 615 and the light emitting layer 616 . The P-type semiconductor layer 617 also includes a P-type doped layer 618 and a P-type buffer layer 619, the P-type doped layer 618 is located between the P-type buffer layer 619 and the light-emitting layer 616, in some embodiments , and may not have an N-type or P-type buffer layer. Furthermore, the driving chip block 621 has a plurality of independently driven pixel electrodes and integrated circuits. The N-type doped layer 614 is a negative semiconductor layer rich in electrons, and the P-type doped layer 618 is a positive semiconductor layer rich in holes. The N-type and P-type buffer layers 615 and 619 are transition layers connecting the N-type doped layer 614 and the P-type doped layer 618 with external materials.

Next, referring to FIGS. 6C and 6D , the light emitting diode block 611 is bonded to the driving chip block 621 , and the P-type semiconductor layer 617 is electrically connected to a plurality of pixel electrodes of the driving chip block 621 . Preferably, in order to avoid affecting the material properties, the light-emitting diode block 611 and the driver chip block 621 are bonded using a low-temperature hybrid connection technology below 200 degrees Celsius, so that the light-emitting diode block 611 and the driver chip area For the bonding of the pixel electrodes in block 621, it can be understood that electrode connection pads may also be provided in order to facilitate bonding or conduct electricity. It should be noted that, in this embodiment, the light-emitting diode block 611 and the driver chip block 621 are blocks that have been cut and separated from the light-emitting diode wafer and the driver circuit wafer respectively, and then the bonding is performed step. In addition, in another embodiment, as shown in FIG. 6A , the entire LED wafer 610 and the driving circuit wafer 620 can also be bonded; or, as shown in FIG. 6B , the LED region is cut and separated from the LED wafer first. Block 611 , bonding the LED block 611 to the driver circuit wafer 620 .

Referring next to FIG. 6E , the substrate 612 is removed, and the LED block 611 is etched to form a plurality of grooves 631 arranged in a staggered manner, and these grooves 631 define a plurality of micro LED pixels 630 arranged in a matrix. (Micro LED array), each of the micro LED pixels 630 corresponds to one of the pixel electrodes, so that the corresponding micro LED pixels 630 can be individually powered through each of the pixel electrodes. It should be noted that the size of each micro-LED pixel 630 is generally in the order of microns.

Next, referring to FIG. 6F , non-conductive glue 632 is injected into the grooves 631 to increase the structural strength between the micro LED pixels 630 . In other embodiments, this step may not be performed.

Next, referring to FIG. 6G , a light-transmitting conductive layer 640 is disposed on the N-type semiconductor layer 613 . More specifically, the light-transmitting conductive layer 640 includes a glass layer coated with an ITO conductive film, and the ITO conductive film is electrically connected to each of the micro-LED pixels 630, and the ITO conductive film is corresponding to the micro-luminescence. The common electrode of the diode pixel 630 . Moreover, the light-transmitting conductive layer 640 is electrically connected to the driver chip block 621 through a conductive glue 650 (or other conductors). Through the potential difference between the ITO conductive film and the pixel electrodes, each micro LED pixel 630 can be controlled to light up.

Next, referring to FIG. 6H, the driver chip block 621 is electrically connected to a circuit board 660 (printed circuit board or flexible circuit board). Furthermore, the driver chip block 621 is arranged on the circuit board 660. , and the driver chip block 621 is electrically connected to the circuit board 660 through wire bonding. It should be noted that, when performing this step, the driver chip block 621 and the light emitting diode block 611 have been cut and separated from the driver circuit wafer and the light emitting diode wafer (that is, independent light emitting diodes). diode pixel array and driver chip). In another embodiment, such as FIG. 6I , the conductive adhesive 650 may not be connected to the driver chip block 621 , but connected to the light-transmitting conductive layer 640 and the circuit board 660 . In some embodiments, there is no conductive glue, and the ITO conductive film is electrically connected to other external power sources. As long as there is a potential difference between the ITO conductive film and the pixel electrode, each micro-luminescence can be made. Diode pixels light up.

After the above steps, the micro light emitting diode display module 600 as shown in FIG. 6H is manufactured. The micro LED display module includes the driver chip block 621 , the LED block 611 , the transparent conductive layer 640 , and the circuit board 660 . The driving chip block 621 has the plurality of pixel electrodes. The LED block 611 is disposed on the driver chip block 621 . The LED block 611 has the first semiconductor layer, the light emitting layer 616 , the second semiconductor layer, and the plurality of trenches 631 . The light-emitting layer 616 is located between the first and second semiconductor layers, the second semiconductor layer is electrically connected to the pixel electrodes, the trenches 631 define the plurality of micro-LED pixels 630 arranged in a matrix, Each of the trenches 631 penetrates through the first semiconductor layer, the second semiconductor layer and the light emitting layer 616 . Each micro-LED pixel 630 corresponds to a pixel electrode, one of the first and second semiconductor layers is an N-type semiconductor layer 613 , and the other is a P-type semiconductor layer 617 . Each groove 631 is filled with non-conductive glue 632 .

The light-transmitting conductive layer 640 is disposed on the light-emitting diode block 611 and connected to the first semiconductor layer, and the light-emitting diode block 611 is between the light-transmitting conductive layer 640 and the driving chip block 621 . The circuit board 660 is electrically connected to the driver chip block 621 , and the driver chip block 621 is interposed between the LED block 611 and the circuit board 660 . A conductive glue 650 is disposed between the light-transmitting conductive layer 640 and the driving chip block 621 , and the conductive glue 650 is electrically connected to the light-transmitting conductive layer 640 and the driving chip block 621 respectively. The light-transmitting conductive layer 640 includes a glass layer coated with an ITO conductive film, and the ITO conductive film is electrically connected to each of the micro LED pixels 630 . In another embodiment, as shown in FIG. 6I , the conductive glue 650 may also be provided between the light-transmitting conductive layer 640 and the driver chip block 621, and the conductive glue 650 is electrically connected to the light-transmitting conductive layer 640 and the driving chip block 621 respectively. The driver chip block 621 .

Please refer to FIGS. 7A, 7B, 7E, 7F, 7G, 7H, and 7I, which show a second embodiment of the present invention. The manufacturing method of the micro-LED display module 700 of this embodiment includes the following steps.

Initially, an LED wafer 710 and a driver circuit wafer 720 are prepared. A partial area of the light emitting diode wafer 710 is defined as a light emitting diode block 711, and a chip-sized area of the driver circuit wafer 720 is defined as a driver chip block 721, wherein the light emitting diode block 711 has a first semiconductor layer, a light-emitting layer 716, and a second semiconductor layer, the light-emitting layer 716 is located between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is connected to a substrate 712, the first and One of the second semiconductor layers is an N-type semiconductor layer, and the other is a P-type semiconductor layer. More specifically, the first semiconductor layer is an N-type semiconductor layer 713 , and the second semiconductor layer is a P-type semiconductor layer 717 . Wherein, the N-type semiconductor layer 713 includes an N-type doped layer 714 and an N-type buffer layer 715 , and the N-type doped layer 714 is located between the N-type buffer layer 715 and the light emitting layer 716 . The P-type semiconductor layer 717 also includes a P-type doped layer 718 and a P-type buffer layer 719, the P-type doped layer 718 is located between the P-type buffer layer 719 and the light-emitting layer 716, in some embodiments , and may not have an N-type or P-type buffer layer.

Referring to FIG. 7A, the LED block 711 is etched to form a plurality of staggered grooves 731, and the grooves 731 define a plurality of micro-LED pixels 730 arranged in a matrix (like a micro-LED array), Each of the trenches 731 at least penetrates the P-type semiconductor layer 717 and the light emitting layer 716 . Furthermore, each of the trenches 731 does not penetrate the N-type semiconductor layer 713 , and the N-type semiconductor layer 713 is a common electrode corresponding to the micro-LED pixels 730 . In other embodiments, each trench can also penetrate the N-type semiconductor layer or only the N-type doped layer, as long as the light-transmitting conductive layer has a common electrode. It can be understood that, when performing the step of etching the LED block, the entire LED wafer can be etched, or only the LED block 711 that has been cut and separated can be etched.

Next, referring to FIG. 7B , non-conductive glue 732 is injected into the grooves 731 to increase the structural strength between the micro LED pixels 730 . In some embodiments, this step may not be performed.

Next, please refer to FIGS. 7E and 7F , bonding the LED block 711 and the driving chip block 721 , wherein the P-type semiconductor layer 717 is electrically connected to a plurality of pixel electrodes of the driving chip block 721 . Preferably, in order to avoid affecting material properties, the LED block 711 and the driver chip block 721 are bonded using a low-temperature hybrid connection technology below 200 degrees Celsius. And each of the micro LED pixels 730 corresponds to one of the pixel electrodes. In this way, the corresponding micro-LED pixels 730 can be individually driven through each of the pixel electrodes. It should be noted that the size of each micro-LED pixel 730 is generally in the order of microns. In this embodiment, the LED block 711 and the driver chip block 721 are blocks that are cut and separated from the LED wafer 710 and the driver circuit wafer 720 respectively, and then the bonding step is performed. It can be understood that, in another embodiment, as shown in FIG. 7C , the entire LED wafer 710 and the driving circuit wafer 720 can also be bonded, and then diced and separated in a subsequent step; or, as shown in FIG. 7D , starting from the The LED wafer 710 is diced to separate the LED blocks 711 , and then the LED blocks 711 are bonded to corresponding positions in the driving circuit wafer 720 , and then dicing is performed.

Next, referring to FIG. 7G , the substrate is removed.

Next, please refer to FIG. 7H , a light-transmitting conductive layer 740 is disposed on the N-type semiconductor layer 713, wherein the light-transmitting conductive layer 740 has a common electrode corresponding to the micro-LED pixels 730, and further, the light-transmitting The conductive layer 740 includes a glass layer coated with an ITO conductive film, and the ITO conductive film is electrically connected to each micro-LED pixel 730 , and the ITO conductive film is a common electrode corresponding to the micro-LED pixels 730 . In addition, the light-transmitting conductive layer 740 is electrically connected to the driver chip block 721 through a conductive glue 750, and through the potential difference between the ITO conductive film and the pixel electrodes, each micro-LED pixel can be controlled. 730 illuminated. In another embodiment, as shown in FIG. 7K and FIG. 7L , the transparent conductive layer 741 may also be an ITO conductive layer formed by physical sputtering without a glass layer.

Next, referring to FIG. 7I , the driver chip block 721 is electrically connected to a circuit board 760. It should be noted that, when performing this step, the driver chip block 721 and the LED block 711 are both Separate blocks (ie, independent LED pixel arrays and driver chips) have been cut from the driver circuit wafer 720 and the LED wafer 710 . In another embodiment, as shown in FIG. 7J , the conductive glue 750 may not connect the driver chip block 721 , but connect the light-transmitting conductive layer 740 and the circuit board 760 . In other embodiments, there may be no conductive glue, and the ITO conductive film is electrically connected to other external power sources with other conductors. As long as there is a potential difference between the ITO conductive film and the pixel electrodes, each micro-LED pixel can be driven shine.

In this embodiment, after the above steps, the micro-LED display module 700 as shown in FIG. 7I is manufactured. The micro LED display module 700 includes the driver chip block 721 , the LED block 711 , the transparent conductive layer 740 , and the circuit board 760 . The driving chip block 721 has the plurality of pixel electrodes. The LED block 711 is disposed on the driver chip block 721 . The LED block 711 has the first semiconductor layer, the light emitting layer 716 , the second semiconductor layer, and the plurality of trenches 731 . The light-emitting layer 716 is located between the first and second semiconductor layers, the second semiconductor layer is electrically connected to the pixel electrodes, the grooves 731 define the plurality of micro-LED pixels 730 arranged in a matrix, Each of the trenches 731 penetrates through the second semiconductor layer and the light emitting layer 716 . Each of the micro LED pixels 730 corresponds to one of the pixel electrodes, one of the first and second semiconductor layers is an N-type semiconductor layer 713 , and the other is a P-type semiconductor layer 717 . Each groove 731 is filled with non-conductive glue 732 .

The light-transmitting conductive layer 740 is disposed on the light-emitting diode block 711 and connected to the first semiconductor layer, and the light-emitting diode block 711 is interposed between the light-transmitting conductive layer 740 and the driving chip block 721 . The circuit board 760 is electrically connected to the driver chip block 721 , and the driver chip block 721 is interposed between the LED block 711 and the circuit board 760 . A conductive glue 750 is disposed between the light-transmitting conductive layer 740 and the driving chip block 721 , and the conductive glue 750 is electrically connected to the light-transmitting conductive layer 740 and the driving chip block 721 respectively. The light-transmitting conductive layer 740 includes a glass layer coated with an ITO conductive film, and the ITO conductive film is electrically connected to each of the micro-LED pixels 730 (of course, it can also only have an ITO conductive layer without a glass layer as shown in FIG. 7L ). In another embodiment, as shown in FIG. 7J , the conductive glue 750 can also be placed between the light-transmitting conductive layer 740 and the driver chip block 721, and the conductive glue 750 is electrically connected to the light-transmitting conductive layer 740 and the driving chip block 721 respectively. The driver chip block 721 .

Please refer to FIGS. 8A, 8B, 8C, 8D, 8E, and 8F, which show a third embodiment of the present invention. The manufacturing method of the micro-LED display module 800 of this embodiment includes the following steps.

Initially, an LED wafer 810 and a driver circuit wafer are prepared. A partial area of the light emitting diode wafer 810 is defined as a light emitting diode block 811, and a chip-sized area of the driver circuit wafer 820 is defined as a driver chip block 821, wherein the light emitting diode block 811 has a first semiconductor layer, a light-emitting layer 816, and a second semiconductor layer, the light-emitting layer 816 is located between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is connected to a substrate 812, the first and One of the second semiconductor layers is an N-type semiconductor layer, and the other is a P-type semiconductor layer. More specifically, the first semiconductor layer is an N-type semiconductor layer 813 , and the second semiconductor layer is a P-type semiconductor layer 817 . Wherein, the N-type semiconductor layer 813 includes an N-type doped layer 814 and an N-type buffer layer 815 , and the N-type doped layer 814 is located between the N-type buffer layer 815 and the light emitting layer 816 . The P-type semiconductor layer 817 also includes a P-type doped layer 818 and a P-type buffer layer 819, the P-type doped layer 818 is located between the P-type buffer layer 819 and the light-emitting layer 816, in some embodiments , and may not have an N-type or P-type buffer layer.

The P-type semiconductor layer 817 of the LED block 811 is bonded to a light-transmitting conductive layer 840 . Furthermore, the light-transmitting conductive layer 840 includes a glass layer coated with an ITO conductive film, and the ITO conductive film is electrically connected to the P-type semiconductor layer 817 . In this embodiment, as shown in FIG. 8A , in this step, the LED wafer 810 is actually bonded to the light-transmitting conductive layer 840 , and the light-transmitting conductive layer 840 is an ITO glass wafer. After this step is completed, the LED block 811 is cut and separated from the LED wafer 810 , as shown in FIG. 8B . In other embodiments, the LED block 811 can also be cut and separated from the LED wafer 810 in a subsequent step.

Next, as shown in FIG. 8C , the substrate 812 is removed; and the LED block 811 is etched. The light-emitting diode block 811 forms a plurality of grooves 831 arranged in a staggered manner, and these grooves 831 define a plurality of micro-light-emitting diode pixels 830 arranged in a matrix, and each of the grooves 831 at least penetrates the N-type semiconductor layer 813 and The light emitting layer 816 . In this embodiment, each trench 831 does not penetrate the P-type semiconductor layer 813 , and the ITO conductive film and the P-type semiconductor layer 813 are common electrodes corresponding to the micro LED pixels 830 . In other embodiments, each trench can also penetrate the N-type semiconductor layer or only penetrate the N-type doped layer. It can be understood that when performing the step of etching the LED block, the entire LED wafer can also be etched.

Next, referring to FIG. 8D , non-conductive glue 832 is injected into the grooves 831 to increase the structural strength between the micro LED pixels 830 . In some embodiments, this step may not be performed.

Next, please refer to FIG. 8E , bonding the LED block 811 and the driver chip block 821, wherein the N-type semiconductor layer 813 is electrically connected to a plurality of pixel electrodes of the driver chip block 821. Preferably, in order to avoid Affecting material properties, the LED block 811 and the driver chip block 821 are bonded by a low temperature hybrid connection technology below 200 degrees Celsius. Each of the micro-LED pixels 830 corresponds to one of the pixel electrodes, so that the corresponding micro-LED pixels 830 can be individually powered through each of the pixel electrodes. It should be noted that, the size of each micro-LED pixel 830 is generally in the order of microns. In this embodiment, the LED block 811 and the driver chip block 821 are blocks that have been diced and separated from the LED wafer and the driver circuit wafer respectively, and then the bonding step is performed. It can be understood that, in other embodiments, the entire LED wafer and the driving circuit wafer can also be bonded; or, the LED block is first cut and separated from the LED wafer, and then the LED area Blocks are bonded to corresponding positions in the drive circuit wafer, and the drive circuit wafer is diced in a subsequent step.

Next, referring to FIG. 8F , the driver chip block 821 is electrically connected to a circuit board 860. It should be noted that, when performing this step, the driver chip block 821 and the light emitting diode block 811 have been completed. Separate blocks (that is, independent LED pixel arrays and driver chips) are cut from the driver circuit wafer and the LED wafer. In this embodiment, the light-transmitting conductive layer 840 is electrically connected to the driver chip block 821 through a conductive glue 850, so that through the potential difference between the ITO conductive film and the pixel electrodes, that is Each micro LED pixel 830 can be controlled to light up. In other embodiments, as shown in FIG. 8G , the conductive glue 850 can also be electrically connected to the light-transmitting conductive layer 840 and the circuit board 860 without connecting to the driver chip block 821 . In some embodiments, there may be no conductive glue, and the ITO conductive film is electrically connected to other external power sources with other conductors. As long as there is a potential difference between the ITO conductive film and the pixel electrodes, each Micro LED pixels light up.

In this embodiment, after the above steps, the micro-LED display module 800 as shown in FIG. 8F can be manufactured. The micro-LED display module includes the driver chip block 821 , the LED block 811 , the transparent conductive layer 840 , and the circuit board 860 . The driving chip block 821 has the plurality of pixel electrodes. The LED block 811 is disposed on the driver chip block 821 . The LED block 811 has the first semiconductor layer, the light emitting layer 816 , the second semiconductor layer, and the plurality of trenches 831 . The light-emitting layer 816 is located between the first and second semiconductor layers, the second semiconductor layer is electrically connected to the pixel electrodes, the grooves 831 define the plurality of micro-LED pixels 830 arranged in a matrix, Each of the trenches 831 penetrates through the second semiconductor layer and the light emitting layer 816 . Each micro-LED pixel 830 corresponds to a pixel electrode, one of the first and second semiconductor layers is an N-type semiconductor layer 813 , and the other is a P-type semiconductor layer 817 . Each groove 831 is filled with non-conductive glue 832 .

The light-transmitting conductive layer 840 is disposed on the light-emitting diode block 811 and connected to the first semiconductor layer, and the light-emitting diode block 811 is between the light-transmitting conductive layer 840 and the driving chip block 821 . The circuit board 860 is electrically connected to the driving chip block 821 , and the driving circuit chip block is interposed between the LED block 811 and the circuit board 860 . A conductive glue 850 is disposed between the light-transmitting conductive layer 840 and the driving chip block 821 , and the conductive glue 850 is electrically connected to the light-transmitting conductive layer 840 and the driving chip block 821 respectively. The light-transmitting conductive layer 840 includes a glass layer coated with an ITO conductive film, and the ITO conductive film is electrically connected to each of the micro LED pixels 830 . In another embodiment, as shown in FIG. 8G , the conductive glue 850 can also be arranged between the transparent conductive layer 840 and the driver chip block 821, and the conductive glue 850 is electrically connected to the transparent conductive layer 840 and the transparent conductive layer 840 respectively. The driver chip block 821 .

Please refer to FIGS. 9A, 9B, 9E, 9F, and 9G, which show a fourth embodiment of the present invention. The manufacturing method of the micro-LED display module with a light-transmitting substrate in this embodiment includes the following steps.

Initially, an LED wafer 910 and a driver circuit wafer 920 are prepared. A partial area of the light emitting diode wafer 910 is defined as a light emitting diode block 911, and a chip-sized area of the driver circuit wafer 920 is defined as a driver chip block 921, wherein the light emitting diode block 911 has a first semiconductor layer, a light-emitting layer 916, and a second semiconductor layer, the light-emitting layer 916 is arranged between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is connected to a light-transmitting substrate 912, and the first semiconductor layer One of the first and second semiconductor layers is an N-type semiconductor layer, and the other is a P-type semiconductor layer. More specifically, the first semiconductor layer is an N-type semiconductor layer 913 , and the second semiconductor layer is a P-type semiconductor layer 917 . Wherein, the N-type semiconductor layer 913 includes an N-type doped layer 914 and an N-type buffer layer 915 , and the N-type doped layer 914 is located between the N-type buffer layer 915 and the light emitting layer 916 . The P-type semiconductor layer 917 also includes a P-type doped layer 918 and a P-type buffer layer 919, the P-type doped layer 918 is located between the P-type buffer layer 919 and the light-emitting layer 916, in some embodiments , and may not have an N-type or P-type buffer layer. Wherein the light-transmitting substrate has good permeability to the visible light band, for example, it may be a sapphire substrate.

Referring to FIG. 9A, the LED block 911 is etched to form a plurality of staggered trenches 931, and the trenches 931 define a plurality of micro-LED pixels 930 arranged in a matrix, each of which penetrates through the trenches 931. The P-type semiconductor layer 917 and the light emitting layer 916 . Furthermore, each of the trenches 931 does not penetrate the N-type semiconductor layer 913 , and the N-type semiconductor layer 913 has a common electrode corresponding to the micro LED pixels 930 . In another embodiment, each of the trenches can also penetrate the N-type doped layer, as long as at least part of the N-type semiconductor layer can be used as a common electrode. It can be understood that, when performing the step of etching the LED block, the entire LED wafer can be etched, or only the LED block 911 that has been cut and separated can be etched. Moreover, the N-type semiconductor layer 913 has a common electrode corresponding to the micro-LED pixels 930, and a protruding portion 970 protrudes from the common electrode in the horizontal direction. In this embodiment, the N-type buffer layer 915 has the protruding portion 970. The protruding portion 970 is produced during the step of etching the LED, and the N-type buffer layer 915 is the common electrode of the LED pixels.

Next, referring to FIG. 9B , non-conductive glue 932 is injected into the grooves 931 to increase the structural strength between the micro LED pixels 930 . In some embodiments, this step may not be performed.

Next, referring to FIGS. 9E and 9F , the LED block 911 and the driving chip block 921 are bonded, wherein the P-type semiconductor layer 917 is electrically connected to a plurality of pixel electrodes of the driving chip block 921 . Preferably, in order to avoid affecting the material properties, the LED block and the driver chip block 921 are bonded by a low temperature hybrid connection technology below 200 degrees Celsius. And each of the micro LED pixels 930 corresponds to one of the pixel electrodes. In this way, power can be supplied to the corresponding micro-LED pixel 930 individually through each of the pixel electrodes. It should be noted that the size of each micro-LED pixel 930 is generally in the order of microns. It should be noted that, in this embodiment, the light-emitting diode block 911 and the driver chip block 921 are blocks that have been cut and separated from the light-emitting diode wafer and the driver circuit wafer respectively, and then the bonding is performed step. It can be understood that, in other embodiments, as shown in FIG. 9C, the entire LED wafer 910 and the driving circuit wafer 920 can also be bonded; Diode block 911 , and then bond the LED block 911 to the corresponding position in the driver circuit wafer 920 , and then perform dicing.

In addition, the protruding portion 970 is electrically connected to the driving chip block 921 through a conductive glue 950, through the potential difference between the N-type buffer layer 915 and the pixel electrodes, each of the pixel electrodes can be controlled. Micro LED pixels 930 light up.

It should be noted that in this embodiment, the light-transmitting substrate 912 does not need to be removed.

Next, referring to FIG. 9G, the driver chip block 921 is electrically connected to a circuit board 960. It should be noted that, when performing this step, the driver chip block 921 and the LED block 911 are both Separate blocks (ie, independent LED pixel arrays and driver chips) have been cut from the driver circuit wafer and the LED wafer. In another embodiment, such as FIG. 9H , the conductive adhesive 950 may not connect the driver chip block 921 , but connect the protruding portion 970 and the circuit board 960 . In some embodiments, the conductive glue 950 may not be provided, and the ITO conductive film is electrically connected to other external power sources with other conductors. As long as there is a potential difference between the ITO conductive film and the pixel electrodes, each The micro LED pixel 930 is illuminated.

In this embodiment, after the above-mentioned steps, a micro-LED display module with a light-transmitting substrate as shown in FIG. 9G is manufactured. The micro-LED display module includes the driver chip block 921 , the LED block 911 , and the circuit board 960 . The driving chip block 921 has the plurality of pixel electrodes. The LED block 911 is disposed on the driver chip block 921 . The LED block 911 has the first semiconductor layer, the light emitting layer 916 , the second semiconductor layer, and the plurality of trenches 931 . The light-emitting layer 916 is located between the first and second semiconductor layers, the second semiconductor layer is electrically connected to the pixel electrodes, the trenches 931 define the plurality of micro-LED pixels 930 arranged in a matrix, Each of the trenches 931 penetrates through the second semiconductor layer and the light emitting layer 916 . Each of the micro LED pixels 930 corresponds to one of the pixel electrodes. Each groove 931 is filled with non-conductive glue 932 . The protruding portion 970 protrudes horizontally from the first semiconductor layer. And the first semiconductor layer is connected to the light-transmitting substrate 912 , and the first semiconductor layer is between the light-transmitting substrate 912 and the light-emitting layer 916 .

The circuit board 960 is electrically connected to the driver chip block 921 , and the driver chip block 921 is interposed between the LED block 911 and the circuit board 960 . A conductive glue 950 is disposed between the protruding portion 970 and the driver chip block 921 , and the conductive glue 950 is electrically connected to the protruding portion 970 and the driver chip block 921 respectively. In another embodiment, as shown in FIG. 9H , a conductive glue 950 can also be placed between the protruding portion 970 and the circuit board 960, and the conductive glue 950 is electrically connected to the protruding portion 970 and the circuit board respectively. 960.

Please refer to FIG. 10 , in order to make the micro-LED display modules of all the above embodiments emit different colors, an additional color layer 170 (RGB color layer) can be provided to make the micro-LED display module emit three-color light. Furthermore, the color layer 170 is formed by spraying corresponding RGB quantum dots on each of the micro-LED pixels, and the quantum dots are excited by the luminescence of each micro-LED pixel to generate three-color light. Furthermore, the color layer 170 has a plurality of red, blue, and green pixel areas 171, 172, 173, each of which corresponds to a micro LED pixel, and the color layer 170 has a plurality of Full-color display point (the smallest unit that can display three-color light). Each full-color display point has at least three adjacent pixel regions 171, 172, 173, and each full-color display point includes at least one red pixel region 171, one blue pixel region 172 and one green pixel region 173. Preferably, for process requirements, a full-color display point may include four adjacent pixel regions (such as a red pixel region 171, a blue pixel region 172, and two green pixel regions 173), so that full-color The arrangement of display points is more regular. In other embodiments, as shown in FIG. 11 , the color layer 180 can also be an RGB filter.

Claims (25)

1. A method for manufacturing a micro-light-emitting diode display module with a light-transmitting substrate, the method may further comprise the steps: Prepare a light-emitting diode wafer and a driving circuit wafer, wherein a part of the light-emitting diode wafer is defined as a light-emitting diode block, and the light-emitting diode block has a first semiconductor layer, a light-emitting layer, and a second A semiconductor layer, the light-emitting layer is arranged between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is connected to a light-transmitting substrate, and a chip-sized area of the driving circuit wafer is defined as a driving chip In a block, one of the first and second semiconductor layers is an N-type semiconductor layer, and the other is a P-type semiconductor layer; Etching the LED block to form a plurality of staggered grooves, wherein the grooves define a plurality of micro LED pixels arranged in a matrix, each of which penetrates the second semiconductor layer and the light emitting layer , wherein the first semiconductor layer has a common electrode corresponding to the micro LED pixels; bonding the light emitting diode block and the driving chip block, wherein the second semiconductor layer is electrically connected to a plurality of pixel electrodes of the driving chip block, and each of the micro light emitting diode pixels corresponds to one of the pixel electrodes; A color layer is arranged on the light-transmitting substrate, wherein the color layer is an RGB color layer. 2. The manufacturing method according to claim 1, wherein the N-type semiconductor layer further comprises an N-type doped layer and an N-type buffer layer, and the N-type doped layer is located between the N-type buffer layer and the N-type buffer layer. Between the light-emitting layers, the N-type buffer layer has the protrusion. 3. The manufacturing method according to claim 1, wherein the P-type semiconductor layer further comprises a P-type doped layer and a P-type buffer layer, and the P-type doped layer is located between the P-type buffer layer and the P-type buffer layer. between the luminescent layers. 4. The manufacturing method according to claim 1, wherein after the step of etching the LED block, the first semiconductor layer is not penetrated by each of the trenches. 5. The manufacturing method according to claim 1, further comprising a step of: electrically connecting the driving chip block to a circuit board, wherein the driving chip block is obtained from the driving wafer Cut the separated driver chip. 6 . The manufacturing method according to claim 5 , wherein a protrusion protrudes horizontally from the common electrode, and the protrusion is electrically connected to the circuit board through a conductive glue. 6 . 7 . The manufacturing method according to claim 1 , wherein a protruding portion protrudes from the common electrode in a horizontal direction, and the protruding portion is electrically connected to the driver chip block through a conductive glue. 8. The manufacturing method according to claim 1, wherein the transparent substrate is a sapphire substrate. 9. The manufacturing method according to claim 1, wherein the color layer is a filter. 10. The manufacturing method according to claim 1, wherein the colored layer is formed by spraying quantum dots. 11. The manufacturing method according to claim 1, further comprising a step before the step of bonding the light emitting diode block and the driver chip block and after the step of etching the light emitting diode block: cutting and separating the light emitting diode block from the light emitting diode wafer; in the step of bonding the light emitting diode block and the driving chip block, the light emitting diode block and the driving circuit having the driving chip block Wafer bonding. 12. The manufacturing method according to claim 1, further comprising a step after the step of preparing the driving circuit wafer before the step of bonding the LED block and the driver chip block: The LED block and the driving chip block are cut and separated from the LED wafer and the driving circuit wafer respectively. 13. The manufacturing method according to claim 1, wherein in the step of bonding the LED block and the driver chip block, the LED wafer with the LED block and the LED wafer with the LED block The driving circuit of the driving chip block is wafer bonded. 14. The manufacturing method according to claim 1, further comprising a step of injecting non-conductive glue into the grooves. 15. A micro light-emitting diode display module with a light-transmitting substrate, comprising: A driving chip block, having a plurality of pixel electrodes; A light-emitting diode block is arranged on the driver chip block, and includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a plurality of grooves, and the light-emitting layer is located between the first and the second semiconductor Between the layers, the second semiconductor layer is electrically connected to the pixel electrodes, and the grooves define a plurality of micro-light emitting diode pixels arranged in a matrix, and each groove penetrates the second semiconductor layer and the light-emitting layer, Each of the micro LED pixels corresponds to a pixel electrode, one of the first and second semiconductor layers is an N-type semiconductor layer, the other is a P-type semiconductor layer, and the first semiconductor layer and a transparent The optical substrate is connected, the first semiconductor layer is between the light-transmitting substrate and the light-emitting layer, and the first semiconductor layer has a common electrode corresponding to the micro-LED pixels; a circuit board electrically connected to the driver chip block, and the drive circuit chip block is interposed between the LED block and the circuit board; A color layer is arranged on the light-transmitting base material, and the light-transmitting base material is located between the color layer and the LED block, wherein the color layer is an RGB color layer. 16 . The micro-LED display module according to claim 15 , wherein a protruding portion protrudes from the first semiconductor layer in the horizontal direction, and the protruding portion is electrically connected to the circuit board. 17. The micro-LED display module according to claim 15, wherein the N-type semiconductor layer comprises an N-type doped layer and an N-type buffer layer, and the N-type doped layer is located on the N-type buffer layer Between the light-emitting layer and the N-type buffer layer is a common electrode. 18. The micro-LED display module according to claim 15, wherein the P-type semiconductor layer further comprises a P-type doped layer and a P-type buffer layer, and the P-type doped layer is located on the P-type buffer layer. layer and the light-emitting layer. 19. The micro light-emitting diode display module according to claim 15, wherein a protrusion protrudes from the first semiconductor layer in the horizontal direction, and a conductive glue is provided between the protrusion and the circuit board, and the The conductive adhesive is respectively electrically connected to the protruding part and the circuit board. 20. The micro-light-emitting diode display module according to claim 15, wherein a protrusion protrudes from the first semiconductor layer in the horizontal direction, and a conductive glue is provided between the protrusion and the driver chip block , the conductive glue electrically connects the protruding portion and the driving chip block respectively. 21. The manufacturing method according to claim 15, wherein the transparent substrate is a sapphire substrate. 22. The micro-LED display module as claimed in claim 15, wherein the color layer is a filter. 23. The micro light emitting diode display module according to claim 15, wherein the color layer is formed by spraying quantum dots. 24. The micro light emitting diode display module as claimed in claim 15, wherein each groove is filled with non-conductive glue. 25. The micro-LED display module as claimed in claim 15, wherein each of the grooves does not penetrate the first semiconductor layer.