CN108964458A - Efficient switch circuit - Google Patents
Efficient switch circuit Download PDFInfo
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- CN108964458A CN108964458A CN201810491782.1A CN201810491782A CN108964458A CN 108964458 A CN108964458 A CN 108964458A CN 201810491782 A CN201810491782 A CN 201810491782A CN 108964458 A CN108964458 A CN 108964458A
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- 238000000034 method Methods 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- COCAUCFPFHUGAA-MGNBDDOMSA-N n-[3-[(1s,7s)-5-amino-4-thia-6-azabicyclo[5.1.0]oct-5-en-7-yl]-4-fluorophenyl]-5-chloropyridine-2-carboxamide Chemical compound C=1C=C(F)C([C@@]23N=C(SCC[C@@H]2C3)N)=CC=1NC(=O)C1=CC=C(Cl)C=N1 COCAUCFPFHUGAA-MGNBDDOMSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000003796 beauty Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
- H03K17/164—Soft switching using parallel switching arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
A kind of switching device, including the first branch, the first branch have the multiple transistors being connected in series.The switching device further includes the second branch with transistor being connected in parallel with the first branch.The switching device further includes controller, controls the multiple transistor and the transistor.The controller is configured as: by the way that the transistor is converted to the second state from first state first, and the multiple transistor being then converted to the second state from first state, so that the switching device is converted to the second state from first state.
Description
Related application
This application require entitled " Efficient Switching Circuit " in the beauty submitted on May 25th, 2017
State provisional application Ser.No No.62/510,838 priority, complete content are incorporated herein by reference.
Background technique
In particular electrical circuit, it is sometimes desirable to multiple transistors be connected in series to be formed and block energy with increased effective voltage
The equivalent switch of power.Insulated gate bipolar is used for applying in the series connection with high voltage applications for medium voltate
The series connection of transistor (IGBT) and other high-voltage switches, it is generally necessary to quiet using carrying out to the voltage across device
Certain of state and dynamic equilibrium means, to ensure reliably to operate, this can actually increase loss in systems, therefore usually answer
For low frequency switch application.It is in need and would be advantageous that, have low-voltage switches (such as low-voltage MOSFET) device with
And the operating method of low-voltage switches, it enables to carry out cost-effective efficient switch with high frequency.
Summary of the invention
Following summary of the invention can be the short-summary of some present inventive concepts merely for illustrative purpose, and can be with
The example for being not intended to limit or constraining in the present invention and detailed description.Those skilled in the art answer from detailed description
Understand other novel combinations and feature.
Embodiment disclosed herein may include low voltage switchgear and the method for its operation.Illustrative reality
Applying example includes: that low-voltage (LV) Metal Oxide Semiconductor Field Effect Transistor (is connected in series) using stack
(MOSFET) to form the equivalent switch with increased voltage blocking capability.In some embodiments, low-voltage MOSFET
(LVM) it is orientated blocking voltage in one direction, and in some embodiments, LVM is orientated blocks electricity in two directions
Pressure.
In some embodiments, stack LVM can form first switch branch, wherein second switch branch and first
Switching branches in parallel connection.Second switch branch may include one or more switches (such as high voltage MOSFET (HVM) and/
Or IGBT).The suitable switch timing of first branch switch and second branch can reduce and switch associated switch and conducting
Loss, and the risk of the switch breakdown during switch (such as due to caused by big backward voltage) can be reduced.
In some embodiments, third switching branches can be connected in parallel with the first branch and second branch.Third branch
It can be characterized in that being selected for one that efficient reversed recovery is provided during the switch of the first branch and/or second branch
Or multiple transistors and/or diode.
In some embodiments, it can use for individually buying available discrete components and assemble with one or more
The switching circuit of a branch.In some embodiments, having the switching circuit of one or more branches can assemble and be encapsulated as
Single printed circuit board (PCB) or module, wherein enable thering is control terminal and power supply terminal to be used in the outside of assembly.?
In some embodiments, there is the switching circuit of one or more branches can be manufactured in manufacturing-level (for example, being integrated in silicon
In).
Detailed description of the invention
About be described below, claim and attached drawing, be best understood from these and other feature of the disclosure, aspect and
Advantage.The disclosure is illustrated by way of example, and is not only restricted to attached drawing.
Fig. 1 is the Some illustrative component block diagram according to one or more illustrative embodimentss.
Fig. 2 is the Some illustrative component block diagram according to one or more illustrative embodimentss.
Fig. 3 is the timing diagram according to one or more illustrative embodimentss.
Fig. 4 is the Some illustrative component block diagram according to one or more illustrative embodimentss.
Fig. 5 is the Some illustrative component block diagram according to one or more illustrative embodimentss.
Fig. 6 is the block diagram according to one or more illustrative embodimentss.
Specific embodiment
In being described below of each illustrative embodiments, attached drawing is had references to, attached drawing forms part of it, and wherein leads to
The mode for crossing explanation shows each embodiment that can practice various aspects of the present disclosure.It should be understood that in the model for not departing from the disclosure
In the case where enclosing, it can use other embodiments, and structure and function modification can be carried out.
The switching circuit according to illustrative embodiments is shown referring now to Fig. 1, Fig. 1.Switching circuit 100 can be characterized in that having
There are the first branch 102 of switch Q1, Q2 and Q3 for being connected in series between terminal X and Y.Switch Q1-Q3 can be low-voltage
MOSFET (LVM), such as be rated for that the drain electrode of about 100V (such as 50V, 80V, 100V, 120V, 150V, 200V etc.) is blocked to arrive
The MOSFET of source voltage.Switch Q1-Q3 can stack (that is, series connection) in source electrode into drain configuration, thus switch Q1-
The body diode of Q3 orients in the same direction (that is, the anode of the parasitic diode of switch Q1 is connected to the parasitism two of switch Q2
The cathode of pole pipe, and the anode of the parasitic diode of switch Q2 is connected to the cathode of the parasitic diode of switch Q3), to increase
The voltage blocking capability of the first branch 102.For example, if each of switch Q1-Q3 is 80V switch (that is, being rated for being resistant to
The voltage of 80V), then the first branch 102 can have the equivalent specified of 80*3=240V.
Compared with using single high-voltage switch, low-voltage switches are stacked to realize that relative-high voltage rated can provide spy
Determine advantage.For example, the 100VMOSFET of three series connections can have the conducting that can be substantially less than single 250VMOSFET
Total conducting resistance (R of resistanceDs, on).For example, single 100VMOSFET can have RDs, on=2m Ω, and single 250V
MOSFET can have RDs, on=50m Ω.Due to conduction loss byIt is given, therefore go here and there
Conduction loss caused by HVM can be substantially less than by joining conduction loss caused by the LVM of connection.
LVM is connected in series, particular challenge may be present when switching LVM between states.For example, switch Q1-Q3 connects
It is connected between terminal X and Y and is in OFF position, and it is expected switching to ON state, be same by switching timing
When possibility have challenge (such as between switch Q1-Q3 manufacture variation due to, these switches Q1-Q3 may need
Three different grids are used to these three switch drivings arriving ON state to source voltage).In addition, controller can be configured
Are as follows: output three controls signal simultaneously, and timing variations are likely to reduced the validity of control signal.Additionally, signal is controlled
Between timing variations may cause to switch one or more of switch damage.For example, if switch O1 and Q2 is being opened
Be switched to ON state before closing Q3, then it may very big (such as 200V, greater than switch Q3 across the drain-to-source voltage of switch Q3
Voltage rating), and may to switch Q3 generate damage.Similarly, when switch Q1-Q3 from ON state is switched to OFF shape
When state, timing and/or manufacture change possible (such as due to avalanche breakdown) to one or more generation damages in switch Q1-Q3
It is bad.
Second branch 103 can be connected in parallel the first branch 102.Second branch 103 may include one or more high
Voltage switch (such as high voltage MOSFET (HVM)) or multiple HVM being connected in parallel can increase and be rated for tolerance nodes X
The peak current rating of the second branch Q4 of full voltage between Y.For example, second branch 103 can be rated for tolerance 600V.
By switching the state with the cascade switch Q4 of switch Q1-Q3, it can partially or even wholly alleviate the behaviour of Operation switch Q1-Q3
It challenges.For example, switch Q4 can be in switch Q1- when the state of switching circuit 100 is switched to ON state from OFF state
ON state is switched to before Q3.By switching the state of switch Q4 before switch Q1-Q3, the voltage across switch Q1-Q3 is answered
Power can substantially reduce (for example, voltage stress can be close to 0V), to reduce the timing for generating damage to one of switch Q1-Q3
The risk of variation.In addition, the switching of switch Q1-Q3 can be due to causing during switching across the low voltage drop of switch Q1-Q3
Low switching losses (that is, close to zero voltage switching).After switch Q4 is connected with switch Q1-Q3, switch Q4, which can be disconnected, (to be utilized
Switch Q1-Q3 provides current path), or switch Q4 can remain up, to provide additional current paths (but due to switching
The low R of Q1-Q3Ds, onParameter, switch Q1-Q3 can provide main current path).
In some embodiments, broad stopband transistor (such as silicon carbide (SiC) or gallium nitride (GaN) crystal be can use
Pipe) realize switch Q4.Compared with HVMOSFET, the Reverse recovery of enhancing can be provided using broad stopband transistor.
Switch Q1-Q4 can be controlled by controller 101.Controller 101 can be or may include analog controller, Wei Chu
Manage device, digital signal processor (DSP), specific integrated circuit (ASIC) and/or field programmable gate array (FPGA).Controller
101 can be timed the switching of switch Q1-Q4, to reduce the switching loss during the operation of switching circuit 100 and lead
Logical loss.
Referring now to Fig. 2, Fig. 2 shows the switching circuits according to illustrative embodiments.Switching circuit 200 can be characterized in that
One branch 102, the first branch 102 have switch Q1, Q2 and the Q3 being connected in series between terminal X and Y.The first branch 102 can
With identical as the first branch 102 of Fig. 1.Second branch 203 may include switch Q4, and switch Q4 can be with the switch Q4 of Fig. 1
It is identical, and can further include the diode D2 for being connected in series to switch Q4.Diode D2, which can be orientated, prevents electric current from flowing through
The body diode of switch Q4 (this is that expectation is so in the case where body diode is low quality (damaging)).Third branch
204 may include diode D1, be deployed as so that: the cathode of diode D1 connection (for example, coupling) to node Y, and two
Nodes X is arrived in the anode connection (for example, coupling) of pole pipe D1.Diode D1 can be such as silicon carbide diode.Diode D1 can
To have relatively low conducting voltage, to provide efficient (for example, having low-loss) current path between nodes X and Y,
And reduce the Reverse recovery energy loss of switching circuit 200 (when being switched to OFF from ON).
Referring now to Fig. 3, Fig. 3 show for (such as controller 101 via Fig. 1) operation switching circuit (such as switch electricity
Road 100 (Fig. 1) or 200 (Fig. 2)) timing diagram.Timing diagram 300 shows the grid that can be applied to the switch Q1-Q4 of Fig. 1 or Fig. 2
Pole tension signal.Timing diagram 300 shows HV switch gate signal 301 and LV switch gate signal 302.HV switch and LV switch can
To operate as follows:
A. when being switched to ON (connection) from OFF (disconnection), HV switch (such as Q4) can be connected, to conduct electric current simultaneously
And reduce the voltage switched across LV.
B. after appropriate short delay, HV switch short can be connected and be made to LV switch, be used for main electricity to provide
The significant lower guiding path of stream.If LV switch, which has, switchs substantially bigger switching delay than HV, operates LV and open
It closes and the controller of HV switch may not be inserted into any delay.
C. after the required ON time, LV switch can be disconnected, and electric current can be switched and return to HV switch.
D. again, after suitable short delay, HV switch can be disconnected, and its dram-source voltage can rise.
The switching circuit 400 according to illustrative embodiments is shown referring now to Fig. 4, Fig. 4.Switching circuit 400 may include
One branch 402, second branch 403 and third branch 404.The first branch 402 may include the one group of LV switch being connected in series
Q1-Q3.Switch Q1 and Q2 can be oriented along first direction, and switch Q3 can orient in a second direction (for example, switch Q2 and
The anode of Q3 may be coupled to common node).Switch Q3 can be LV switch (such as voltage rating with 80V-120V) or
Super LV switchs (such as the voltage rating that can have about 30V), and can operate for by when switch Q1 and Q2 are just grasped
" pressure " makes electric current leave the body diode of switch Q1 and Q2 and before disconnecting switch Q4 and Q5 when making under rectification mode
" pressure " makes electric current access switch Q4 to improve the commutation of switching circuit 400.
In some embodiments, with switch Q1 or with the diode of the back-to-back connection of switch Q2 (such as Schottky (Xiao Te
Base) diode) can be with alternative switch Q3, and diode can similarly serve the body for preventing electric current from flowing through switch Q1 and Q2
Diode.
Second branch 403 can be connected in parallel with the first branch 402, and can be characterized in that back-to-back (for example, having
The anode connected) HV switch Q4 and Q5.Switch Q5, which can be served, prevents electric current from flowing through the body diode of switch Q4 (with figure
2 diode D2 is similar).Third branch 404 can be similar or identical with the third branch 204 of Fig. 2, and may include two poles
Pipe D1.
The first branch 402, second branch 403 and third branch 404 can be by the identical or phases with the controller 101 of Fig. 1
As controller 101 control.
In a particular embodiment, it may not assign third branch 404 feature.For example, being characterized in that having in second branch 403
There are reasonable high quality bulk diode (such as HV gallium nitride (GaN) switch) and/or good reverse recovery characteristic (such as low reversed extensive
Multiple loss) switch in the case where.
The switching circuit 500 according to illustrative embodiments is shown referring now to Fig. 5, Fig. 5.Switching circuit 500 can be two-way
Switching circuit is designed and operated for allowing control electric current to flow to node Y from nodes X and/or flowing to nodes X from node Y.
The first branch 502 may include one group of LV switch Q1-Q3 being connected in series along the first of first direction orientation (such as with orientation
To prevent electric current from flowing to from node Y the body diode of nodes X) and second one group of LV being connected in series for orienting in a second direction
Switch Q6-Q8 (such as be orientated the body diode for preventing electric current from flowing to from nodes X node Y).By using back-to-back
The LV switch of two groups of series connections, the first branch 502 can provide high two-way between nodes X and Y and between node Y and X
Voltage blocking capability.
Second branch 503 can be connected in parallel with the first branch 502, and can be characterized in that back-to-back (for example, having
The anode connected) HV switch Q4 and Q5.HV switch back-to-back connects, between nodes X and Y and node Y and X it
Between high bi-directional voltage blocking ability is provided.
The integrated switching circuit according to illustrative embodiments is shown referring now to Fig. 6, Fig. 6.Switching circuit 600 can be Fig. 1
Switch Q1-Q4 integrated assembly (such as PCB or module).Nodes X and Y can be used via external terminal and in outside,
The gate terminal of switch Q1-Q3 can be used via LeglON terminal, and the gate terminal of switch Q4 can be via
Leg2ON terminal and can be used.Terminal Leg1ON and Leg2ON may be coupled to suitable controller (such as the controller with Fig. 1
101 similar or identical controllers).In some embodiments, controller can be further integrated in switching circuit 600,
Middle accessory power supply is supplied to controller via auxiliary terminal Aux.Fig. 1 switch Q1-Q4 (together with other circuits (such as grid drive
Dynamic device circuit) together) individual module encapsulation can be used integrated, or can (such as in wafer scale) it is integrated as manufacture knot
Structure.Integrated package (such as switch) can provide lower cost, improved efficiency and increased ease for use.In some implementations
In example, integrated manipulator can provide the simpler control being presented to the user.For example, two terminals Leg1ON and Leg2ON can
To be unified for single terminal, to be used to receive simple logic ON/OFF command signal, and internal controller can handle Fig. 3's
Timing configuration.
In the extra switch (such as switch Q5 of Fig. 4) or the embodiment of device for involving a need to control signal, switch electricity
Road 600 may include the additional terminal that can be used for receiving control signal.
Embodiment disclosed herein uses the switching branches of two or three MOSFET with such as series connection.It answers
Understand, substitute MOSFET or other than MOSFET, other switches can also be used, and any amount of open can be used
It closes.For example, eight 100V LVM can be stacked to form the equivalent 800V connecting with the branch circuit parallel connection with 1200VIGBT and switch
Branch.As another example, three 1200VIGBT can be stacked to be formed and be connect with the branch circuit parallel connection with 3.3kV SiCFET
Equivalent 3600V switching branches.
MOSFET is used as the switch example occurred in low-voltage deformation and high voltage deformation, and can be used to implement use
In the switch for forming switching circuit disclosed herein.Other types of switch, such as ambipolar knot transformer can be used
(BJT), insulated gate bipolar transistor (IGBT), gallium nitride switch (GaN), silicon carbide switches (SiC) and more Multi- Switch.
For example, power BJT or LV BJT may be used as the LV switch Q1-Q3 of Fig. 1.Switch Q4 can be super node MOSFET,
SiC switch or GaN switch.The diode D1 of Fig. 2 can be Schottky diode (for example, in low voltage application), silicon
Diode, SiC diode or GaN Schottky diode.
As another example, the switch Q1-Q3 of Fig. 1 can be thyristor, and switch Q4 can be IGBT.Some
In embodiment, the switch Q1-Q3 of Fig. 1 can be IGBT, and switch Q4 can be SiC switch.
Note that various connections are elaborated between each element herein.General description has been carried out to these connections, and
Unless otherwise specified, otherwise these connection can be it is direct or indirect；This specification is not intended to be limited in this respect.This
Outside, the element of one embodiment can it is appropriate combination or super group close in the factor combination from other embodiments.For example,
The switch Q5 of Fig. 4 can be with the diode D2 of alternate figures 2.
According to the first illustrative embodiments, a kind of switching device is provided.The switching device includes the first branch comprising string
Join multiple transistors of connection.The switching device further includes the second branch being connected in parallel with the first branch comprising transistor.
The switching device further include: controller controls the multiple transistor of the first branch and the transistor of second branch.Control
Device processed is configured as: by the way that the transistor of second branch is converted to the second state from first state first, then by first
The multiple transistor on road is converted to the second state from first state, so that switching device is converted to second from first state
State.
For the switching device according to the first illustrative embodiments, the multiple transistor of the first branch includes at least two
A low-voltage MOSFET.
For the switching device according to the first illustrative embodiments, the transistor of second branch includes high voltage MOSFET.
For the switching device according to the first illustrative embodiments, at least two low-voltages MOSFET, which has, to be not more than
The rated maximum voltage of 120V.
For the switching device according to the first illustrative embodiments, first state is ON state, and the second state is OFF
State.
For the switching device according to the first illustrative embodiments, first state is OFF state, and the second state is ON
State.
For the switching device according to the first illustrative embodiments, which further includes diode, with the crystalline substance
Body pipe is connected in series, to form second branch.
For the switching device according to the first illustrative embodiments, which further includes third branch, and described
The first branch and the second branch parallel coupled, third branch include diode.
For the switching device according to the first illustrative embodiments, which further includes second transistor, with institute
The transistor for stating second branch is connected in series.
For the switching device according to the first illustrative embodiments, which further includes third branch, and described
The first branch and the second branch parallel coupled, third branch include diode.
According to the second illustrative embodiments, a kind of method for forming switching device is provided.The described method includes: being connected in series
Multiple transistors are to form the first branch.The method also includes: the second branch including transistor is connected in series to first
Branch.The method also includes: the institute of the first branch is controlled by the way that switching device is converted to the second state from first state
State the transistor of multiple transistors and second branch, it is described by switching device from first state be converted to the second state by with
Lower realization: being converted to the second state from first state for the transistor of second branch first, then by the described more of the first branch
A transistor is converted to the second state from first state.
For the method according to the second illustrative embodiments, the multiple transistor of the first branch includes at least two low
Voltage MOSFET.
For the method according to the second illustrative embodiments, the transistor of second branch includes high voltage MOSFET.
For the method according to the second illustrative embodiments, at least two low-voltages MOSFET, which has, is not more than 120V
Rated maximum voltage.
For the method according to the second illustrative embodiments, first state is ON state, and the second state is OFF shape
State.
For the method according to the second illustrative embodiments, first state is OFF state, and the second state is ON shape
State.
For the method according to the second illustrative embodiments, the method also includes: connection in the second branch
The diode that the transistor is connected in series.
For the method according to the second illustrative embodiments, the method also includes: connection in the second branch
The second transistor that the transistor is connected in series.
According to third illustrative embodiments, a kind of switching device is provided.The switching device includes the first branch comprising string
Join more than first a transistors of connection.The switching device further includes second branch comprising a crystal more than the second of series connection
Pipe, second branch are connected in parallel with the first branch.The switching device further includes controller, and described the first of the control first branch
More than described second a transistors of multiple transistors and second branch.Controller is configured as: by first by second branch
More than described second a transistors be converted to the second state from first state, then by more than described the first of the first branch a crystal
Pipe is converted to the second state from first state, so that switching device is converted to the second state from first state.
For the switching device according to third illustrative embodiments, first state is OFF state, and the second state is ON
State or first state are ON states, and the second state is OFF state.
It is emphasized in the claim that the various features of various embodiments of the invention are hereinafter numbered at one group.These are special
Sign is not construed as limited to the present invention or inventive concept, but is provided only as to described in this specification of the invention one
A little characteristics are emphasized, and do not imply that the importance of these characteristics or the particular order of relevance.
A kind of entry 1: switching device, comprising:
The first branch comprising multiple transistors of series connection,
The second branch being connected in parallel with the first branch comprising transistor,
Controller controls the multiple transistor of the first branch and the transistor of second branch,
Wherein, the controller is configured as: by the way that the transistor of second branch is converted to from first state first
Then the multiple transistor of the first branch is converted to the second state from first state, thus by switching device by two-state
The second state is converted to from first state.
Entry 2: the switching device as described in entry 1, wherein the multiple transistor of the first branch includes at least two
Low-voltage MOSFET.
Entry 3: the switching device as described in entry 2, wherein the transistor of second branch includes high voltage MOSFET.
Entry 4: the switching device as described in entry 3, wherein at least two low-voltages MOSFET, which has, to be not more than
The rated maximum voltage of 120V.
Entry 5: the switching device as described in entry 1, wherein first state is ON state, and the second state is OFF shape
State.
Entry 6: the switching device as described in entry 1, wherein first state is OFF state, and the second state is ON shape
State.
Entry 7: the switching device as described in entry 3 further includes diode, is connected in series with the transistor to be formed
Second branch.
Entry 8: the switching device as described in entry 1 further includes third branch, in parallel with the first branch and second branch
Coupling, third branch includes diode.
Entry 9: the switching device as described in entry 1, wherein second branch further includes second transistor, with second
The transistor on road is connected in series.
Entry 10: the switching device as described in entry 9 further includes third branch, simultaneously with the first branch and second branch
Connection coupling, third branch includes diode.
Entry 11: a method of forming switching device, comprising:
Multiple transistors are connected in series to form the first branch,
Second branch including transistor is connected in series to the first branch,
The multiple transistor of the first branch and the transistor of second branch are controlled by following operation:
Switching device is converted to the second state from first state, is achieved by the following way: first by the crystalline substance of second branch
Body pipe is converted to second state from first state, then changes the multiple transistor of the first branch from first state
To the second state.
Entry 12: the method as described in entry 11, wherein the multiple transistor of the first branch includes at least two low
Voltage MOSFET.
Entry 13: the method as described in entry 12, wherein the transistor of second branch includes high voltage MOSFET.
Entry 14: the method as described in entry 13, wherein at least two low-voltages MOSFET, which has, is not more than 120V
Rated maximum voltage.
Entry 15: the method as described in entry 11, wherein first state is ON state, and the second state is OFF shape
State.
Entry 16: the method as described in entry 11, wherein first state is OFF state, and the second state is ON shape
State.
Entry 17: the method as described in entry 13, further includes:
The diode that connection is connected in series with the transistor in second branch.
Entry 18: the method as described in entry 11, further includes:
The second transistor that connection is connected in series with the transistor in second branch.
A kind of entry 19: switching device, comprising:
The first branch comprising a transistor more than the first of series connection,
Second branch comprising a transistor, second branch are connected in parallel with the first branch more than the second of series connection,
Controller controls more than described first a transistors of the first branch and more than described second crystalline substances of second branch
Body pipe,
Wherein, controller is configured as: switching device being converted to the second state from first state by following operation: first
More than described the second of the second branch a transistor is first converted to the second state from first state, then by the first branch
A transistor is converted to the second state from first state more than described first.
Entry 20: the method as described in entry 19, wherein the first state is OFF state, and second state
It is ON state or the first state is ON state, and second state is OFF state.
Claims (15)
1. a kind of switching device, comprising:
The first branch comprising multiple transistors of series connection,
The second branch being connected in parallel with the first branch comprising transistor,
Controller controls the multiple transistor of the first branch and the transistor of the second branch,
Wherein, the controller is configured as: by the way that the transistor of the second branch is converted to from first state first
Two-state, and the multiple transistor of the first branch is then converted to second state from the first state,
To which the switching device is converted to the second state from first state.
2. switching device as described in claim 1, wherein the multiple transistor of the first branch includes at least two
Low-voltage MOSFET.
3. switching device as claimed in claim 2, wherein the transistor of the second branch includes high voltage
MOSFET。
4. switching device as claimed in claim 3, wherein at least two low-voltages MOSFET has no more than 120V's
Rated maximum voltage.
5. switching device as described in claim 1, wherein the first state is ON state, and second state is
OFF state.
6. switching device as described in claim 1, wherein the first state is OFF state, and second state is
ON state.
7. switching device as claimed in claim 3 further includes diode, it is connected in series with the transistor described to be formed
Second branch.
8. switching device as described in claim 1, wherein the second branch further includes the crystalline substance with the second branch
The second transistor that body pipe is connected in series.
9. switching device as claimed in claim 9 further includes third branch, with the first branch and the second branch
Parallel coupled, the third branch includes diode.
10. a kind of method for forming switching device, comprising:
Multiple transistors are connected in series to form the first branch,
Second branch including transistor is connected in series to the first branch,
The crystal of the multiple transistor and the second branch of the first branch is controlled by following operation
Pipe:
By the way that the transistor of the second branch is converted to the second state from first state first, and then by described
The multiple transistor of one branch is converted to second state from the first state, thus by the switching device from
One state is converted to the second state.
11. method as claimed in claim 11, wherein the multiple transistor of the first branch includes at least two low
Voltage MOSFET.
12. method as claimed in claim 12, wherein the transistor of the second branch includes high voltage MOSFET,
Also, wherein at least two low-voltages MOSFET has the rated maximum voltage no more than 120V.
13. method as claimed in claim 11, wherein the first state is ON state, and second state is OFF
State or the first state are OFF states, and second state is ON state.
14. method as claimed in claim 11, further includes:
The diode that the transistor of connection and the second branch is connected in series.
15. method as claimed in claim 11, further includes:
The second transistor that the transistor of connection and the second branch is connected in series.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310347641.3A CN116545259A (en) | 2017-05-25 | 2018-05-21 | High-efficiency switch circuit |
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| US201762510838P | 2017-05-25 | 2017-05-25 | |
| US62/510,838 | 2017-05-25 |
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| CN202310347641.3A Division CN116545259A (en) | 2017-05-25 | 2018-05-21 | High-efficiency switch circuit |
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| CN108964458B CN108964458B (en) | 2023-04-21 |
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| US (5) | US10608624B2 (en) |
| EP (1) | EP3407494A1 (en) |
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| US10608624B2 (en) * | 2017-05-25 | 2020-03-31 | Solaredge Technologies Ltd. | Efficient switching circuit |
| US11239741B2 (en) * | 2018-03-16 | 2022-02-01 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor switch control circuit and switching power source device |
| US12255550B2 (en) * | 2021-03-12 | 2025-03-18 | Wisconsin Alumni Research Foundation | Current source inverter using bidirectional switches with bidirectional power flow capability |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20220345124A1 (en) | 2022-10-27 |
| US10608624B2 (en) | 2020-03-31 |
| US11695402B2 (en) | 2023-07-04 |
| US11374562B2 (en) | 2022-06-28 |
| EP3407494A1 (en) | 2018-11-28 |
| US20230336169A1 (en) | 2023-10-19 |
| CN116545259A (en) | 2023-08-04 |
| US20200259486A1 (en) | 2020-08-13 |
| US12166475B2 (en) | 2024-12-10 |
| US20250062759A1 (en) | 2025-02-20 |
| CN108964458B (en) | 2023-04-21 |
| US20180343002A1 (en) | 2018-11-29 |
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