CN108962839A - Packaging structure - Google Patents
Packaging structure Download PDFInfo
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- CN108962839A CN108962839A CN201710384186.9A CN201710384186A CN108962839A CN 108962839 A CN108962839 A CN 108962839A CN 201710384186 A CN201710384186 A CN 201710384186A CN 108962839 A CN108962839 A CN 108962839A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种封装结构,尤其涉及一种可内埋封装元件的封装结构。The invention relates to a package structure, in particular to a package structure capable of embedding package components.
背景技术Background technique
当考虑电子装置或封装结构的整体厚度时,则需要探讨内埋元件的构装方式。通过元件的内埋化,可使封装体积大幅度缩小,能放入更多高功能性元件,以增加基板表面的布局面积,以达到电子产品薄型化的目的。一般而言,在现有使用内埋式元件的封装技术中,需先在基板上形成一容置槽,以将元件配置于基板的容置槽内。之后,再进行填充绝缘胶体的步骤,以使元件内埋于基板中。然而,内埋元件往往会面临到散热不佳的问题,进而影响电子装置或封装结构整体的散热性能。When considering the overall thickness of the electronic device or package structure, it is necessary to discuss the construction method of the embedded components. Through the embedding of components, the volume of the package can be greatly reduced, and more high-functional components can be placed to increase the layout area of the substrate surface, so as to achieve the purpose of thinning electronic products. Generally speaking, in the existing packaging technology using embedded components, it is necessary to first form an accommodating groove on the substrate, so as to arrange the components in the accommodating groove of the substrate. Afterwards, the step of filling insulating colloid is carried out, so that the components are embedded in the substrate. However, the embedded components often face the problem of poor heat dissipation, which further affects the overall heat dissipation performance of the electronic device or package structure.
发明内容Contents of the invention
本发明提供一种封装结构,其可内埋封装元件,具有缩减封装高度的功效。The invention provides a package structure, which can embed package components, and has the effect of reducing package height.
本发明的一种封装结构,包括金属基板、核心结构层及封装元件。核心结构层配置于金属基板上,且具有开口以及图案化导电层,封装元件配置于金属基板上,且位于核心结构层的开口中。其中封装元件包括多个外引脚,而外引脚与核心结构层的图案化导电层电性连接,且每一个外引脚的外表面切齐于图案化导电层的上表面。A packaging structure of the present invention includes a metal substrate, a core structure layer and packaging components. The core structure layer is configured on the metal substrate and has an opening and a patterned conductive layer. The packaging element is configured on the metal substrate and located in the opening of the core structure layer. The packaging component includes a plurality of external leads, and the external leads are electrically connected to the patterned conductive layer of the core structure layer, and the outer surface of each external lead is aligned with the upper surface of the patterned conductive layer.
在本发明的一实施例中,上述的金属基板具有配置表面与凹槽,核心结构层配置于配置表面上,而封装元件配置于凹槽内,且配置表面与凹槽的底面具有高度差。In an embodiment of the present invention, the above-mentioned metal substrate has a disposing surface and a groove, the core structure layer is disposed on the disposing surface, and the packaging element is disposed in the groove, and there is a height difference between the disposing surface and the bottom surface of the groove.
在本发明的一实施例中,上述的凹槽的底面为粗糙表面。In an embodiment of the present invention, the bottom surface of the above-mentioned groove is a rough surface.
在本发明的一实施例中,上述的金属基板具有配置表面,而核心结构层与封装元件配置于配置表面上。In an embodiment of the present invention, the above-mentioned metal substrate has a configuration surface, and the core structure layer and the package components are configured on the configuration surface.
在本发明的一实施例中,上述的核心结构层包括介电层,介电层位于图案化导电层与金属基板之间。In an embodiment of the present invention, the above-mentioned core structure layer includes a dielectric layer, and the dielectric layer is located between the patterned conductive layer and the metal substrate.
在本发明的一实施例中,上述的封装元件还包括芯片、封装胶体。芯片具有多个接垫。封装胶体包覆芯片且暴露出每一个接垫的表面,其中外引脚配置于封装胶体上且分别连接至每一个接垫的表面。In an embodiment of the present invention, the above-mentioned packaging component further includes a chip and a packaging compound. The chip has a plurality of pads. The encapsulant covers the chip and exposes the surface of each pad, wherein the external pins are disposed on the encapsulant and respectively connected to the surface of each pad.
在本发明的一实施例中,上述的封装元件还包括芯片座、芯片、封装胶体以及多条导线。芯片配置于芯片座上。封装胶体包覆芯片及芯片座,其中外引脚配置于封装胶体上,且导线电性连接于芯片与外引脚之间。In an embodiment of the present invention, the above-mentioned packaging component further includes a chip holder, a chip, a packaging compound, and a plurality of wires. The chip is configured on the chip seat. The encapsulation colloid covers the chip and the chip seat, wherein the external leads are arranged on the encapsulation colloid, and the wires are electrically connected between the chip and the external leads.
在本发明的一实施例中,上述的外引脚通过多条导线与核心结构层的图案化导电层电性连接。In an embodiment of the present invention, the above-mentioned external pins are electrically connected to the patterned conductive layer of the core structure layer through a plurality of wires.
在本发明的一实施例中,上述的外引脚结构性且电性连接至核心结构层的图案化导电层。In an embodiment of the present invention, the above-mentioned external leads are structurally and electrically connected to the patterned conductive layer of the core structure layer.
在本发明的一实施例中,上述的封装结构还包括绝缘层,填充于封装元件与核心结构层的开口之间。In an embodiment of the present invention, the above package structure further includes an insulating layer filled between the package element and the opening of the core structure layer.
在本发明的一实施例中,上述的封装结构还包括黏着层,配置于核心结构层与金属基板之间。In an embodiment of the present invention, the above package structure further includes an adhesive layer disposed between the core structure layer and the metal substrate.
在本发明的一实施例中,上述的封装结构还包括导热胶层,配置于封装元件与金属基板之间。In an embodiment of the present invention, the above package structure further includes a thermally conductive adhesive layer disposed between the package component and the metal substrate.
在本发明的一实施例中,上述的封装结构还包括表面处理层,配置于图案化导电层的上表面上与每一个外引脚的外表面上。In an embodiment of the present invention, the above package structure further includes a surface treatment layer disposed on the upper surface of the patterned conductive layer and the outer surface of each outer lead.
在本发明的一实施例中,上述的封装结构还包括防焊层,配置于核心结构层,且至少覆盖图案化导电层与封装元件的外引脚。In an embodiment of the present invention, the above-mentioned package structure further includes a solder resist layer disposed on the core structure layer and covering at least the patterned conductive layer and the outer leads of the package component.
在本发明的一实施例中,上述的封装结构还包括电子元件及多个导电通孔。电子元件配置于防焊层上。导电通孔贯穿防焊层且暴露部分图案化导电层,其中电子元件通过多个导电通孔而电性连接图案化导电层。In an embodiment of the present invention, the above package structure further includes electronic components and a plurality of conductive vias. The electronic components are arranged on the solder resist layer. The conductive vias penetrate the solder resist layer and expose part of the patterned conductive layer, wherein the electronic components are electrically connected to the patterned conductive layer through the plurality of conductive vias.
在本发明的一实施例中,上述的封装结构还包括防焊层以及表面处理层。防焊层配置于核心结构层,且覆盖图案化导电层,其中防焊层暴露出图案化导电层的部分上表面。表面处理层,配置于防焊层所暴露出的图案化导电层的上表面上与每一个外引脚的外表面上。In an embodiment of the present invention, the above package structure further includes a solder mask layer and a surface treatment layer. The solder resist layer is configured on the core structure layer and covers the patterned conductive layer, wherein the solder resist layer exposes part of the upper surface of the patterned conductive layer. The surface treatment layer is configured on the upper surface of the patterned conductive layer exposed by the solder resist layer and the outer surface of each outer lead.
基于上述,在本发明的封装结构的配置中,封装元件是配置在金属基板上且位于核心结构层的开口中。如此一来,封装元件是内埋入核心结构层中,且封装元件的外引脚与核心结构层的图案化导电层呈共平面,藉此可降低封装结构的整体封装高度。此外,封装元件是配置于金属基板上,可通过金属基板的导热性质来提升封装元件的散热效率。Based on the above, in the configuration of the packaging structure of the present invention, the packaging element is disposed on the metal substrate and located in the opening of the core structure layer. In this way, the packaging component is embedded in the core structure layer, and the outer leads of the package component and the patterned conductive layer of the core structure layer are coplanar, thereby reducing the overall package height of the package structure. In addition, the packaging components are configured on the metal substrate, and the heat dissipation efficiency of the packaging components can be improved through the thermal conductivity of the metal substrate.
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.
附图说明Description of drawings
图1显示为本发明的一实施例的一种封装结构的剖面示意图;FIG. 1 shows a schematic cross-sectional view of a packaging structure according to an embodiment of the present invention;
图2显示为本发明的另一实施例的一种封装结构的剖面示意图;FIG. 2 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention;
图3显示为本发明的另一实施例的一种封装结构的剖面示意图;FIG. 3 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention;
图4显示为本发明的另一实施例的一种封装结构的剖面示意图;FIG. 4 is a schematic cross-sectional view of a package structure according to another embodiment of the present invention;
图5显示为本发明的另一实施例的一种封装结构的剖面示意图;FIG. 5 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention;
图6显示为本发明的另一实施例的一种封装结构的剖面示意图;FIG. 6 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention;
图7显示为本发明的另一实施例的一种封装结构的剖面示意图;FIG. 7 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention;
图8显示为本发明的另一实施例的一种封装结构的剖面示意图。FIG. 8 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention.
附图标记说明:Explanation of reference signs:
100A、100B、100C、100D、100E、100F、100G、100H:封装结构100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H: package structure
110、110c、110d:金属基板110, 110c, 110d: metal substrate
112:配置表面112: Configuration surface
114c、114d:凹槽114c, 114d: grooves
115c、115d:底面115c, 115d: bottom surface
120:核心结构层120: Core structure layer
122:开口122: opening
124:图案化导电层124: Patterned conductive layer
126:介电层126: Dielectric layer
130、230:封装元件130, 230: package components
231:芯片座231: chip seat
132、232:外引脚132, 232: external pins
134、234:芯片134, 234: chips
1342:接垫1342: pad
136、236:封装胶体136, 236: encapsulation colloid
238:导线238: wire
140:绝缘层140: insulating layer
150:黏着层150: Adhesive layer
160:导热胶层160: thermally conductive adhesive layer
170、170’:表面处理层170, 170': surface treatment layer
180、180’:防焊层180, 180': solder mask
190:电子元件190: Electronic components
190A:导电通孔190A: Conductive Via
W:导线W: wire
H:高度差H: height difference
S1、S1’:外表面S1, S1': outer surface
S2:上表面S2: upper surface
S3:表面S3: Surface
G:空气间隙G: air gap
具体实施方式Detailed ways
图1显示为本发明的一实施例的一种封装结构的剖面示意图。请参考图1,本实施例的封装结构100A,其包括金属基板110、核心结构层120及封装元件130。核心结构层120配置于金属基板110上,且具有开口122以及图案化导电层124。封装元件130配置于金属基板110上且位于核心结构层110的开口122中。封装元件130包括多个外引脚132,且每一个外引脚132电性连接至核心结构层120的图案化导电层124。特别是,每一个外引脚132的外表面S1切齐于图案化导电层124的上表面S2。FIG. 1 is a schematic cross-sectional view of a packaging structure according to an embodiment of the present invention. Please refer to FIG. 1 , the package structure 100A of this embodiment includes a metal substrate 110 , a core structure layer 120 and a package component 130 . The core structure layer 120 is disposed on the metal substrate 110 and has an opening 122 and a patterned conductive layer 124 . The packaging component 130 is disposed on the metal substrate 110 and located in the opening 122 of the core structure layer 110 . The package component 130 includes a plurality of external leads 132 , and each external lead 132 is electrically connected to the patterned conductive layer 124 of the core structure layer 120 . In particular, the outer surface S1 of each outer lead 132 is aligned with the upper surface S2 of the patterned conductive layer 124 .
详细而言,本实施例的金属基板110具有配置表面112,且核心结构层120与封装元件130分别配置于配置表面112上。封装元件130与核心结构层120之间具有空气间隙G,意即封装元件130不接触核心结构层120的开口122的内壁。核心结构层120还包括介电层126,其中介电层126位于图案化导电层124与金属基板110之间。封装元件130还包括芯片134、封装胶体136,其中芯片134具有多个接垫1342,而封装胶体136包覆芯片134且暴露出每一个接垫1342的表面S3。每一个外引脚132配置于封装胶体136上,且分别结构性且电性连接至每一个接垫1342的表面S3,以使芯片134可通过外引脚132而电性连接至核心结构层120的图案化导电层124。如图1所示,本实施例的封装元件130具体化为覆晶型态的封装元件,且封装元件130的外引脚132是结构性且电性连接至核心结构层120的图案化导电层124。In detail, the metal substrate 110 of this embodiment has a disposition surface 112 , and the core structure layer 120 and the package component 130 are respectively disposed on the disposition surface 112 . There is an air gap G between the package component 130 and the core structure layer 120 , which means that the package component 130 does not contact the inner wall of the opening 122 of the core structure layer 120 . The core structure layer 120 further includes a dielectric layer 126 , wherein the dielectric layer 126 is located between the patterned conductive layer 124 and the metal substrate 110 . The packaging component 130 further includes a chip 134 and an encapsulant 136 , wherein the chip 134 has a plurality of pads 1342 , and the encapsulant 136 covers the chip 134 and exposes a surface S3 of each pad 1342 . Each external lead 132 is disposed on the encapsulant 136, and is respectively structurally and electrically connected to the surface S3 of each pad 1342, so that the chip 134 can be electrically connected to the core structure layer 120 through the external lead 132. The patterned conductive layer 124. As shown in FIG. 1 , the package component 130 of this embodiment is embodied as a flip-chip package component, and the outer leads 132 of the package component 130 are structurally and electrically connected to the patterned conductive layer of the core structure layer 120 124.
请再参考图1,为了进一步固定封装元件130的位置,本实施例的封装结构100A可包括绝缘层140,其中绝缘层140填充于封装元件130与核心结构层120的开口122之间的空气间隙G内,以将封装元件130定位于开口122中。再者,本实施例的封装结构100A可还包括黏着层150,其中黏着层150配置于核心结构层120与金属基板110之间,而核心结构层120通过黏着层150而黏着且固定于金属基板110上。此外,为了增加封装元件130的散热效果,本实施例的封装结构100A亦还包括导热胶层160,其中导热胶层160配置于封装元件130与金属基板110之间,而封装元件130可通过导热胶层160而黏着且固定于金属基板110上,且封装元件130可依序通过导热胶层160与金属基板110而将所产生的热快速地传递至外界。Please refer to FIG. 1 again, in order to further fix the position of the package component 130, the package structure 100A of this embodiment may include an insulating layer 140, wherein the insulating layer 140 fills the air gap between the package component 130 and the opening 122 of the core structure layer 120 G, so that the packaging component 130 is positioned in the opening 122 . Moreover, the package structure 100A of this embodiment may further include an adhesive layer 150, wherein the adhesive layer 150 is disposed between the core structure layer 120 and the metal substrate 110, and the core structure layer 120 is adhered and fixed to the metal substrate through the adhesive layer 150 110 on. In addition, in order to increase the heat dissipation effect of the package component 130, the package structure 100A of this embodiment also includes a thermally conductive adhesive layer 160, wherein the thermally conductive adhesive layer 160 is disposed between the package component 130 and the metal substrate 110, and the package component 130 can conduct heat. The adhesive layer 160 is adhered and fixed on the metal substrate 110 , and the packaging element 130 can pass the heat generated by the thermally conductive adhesive layer 160 and the metal substrate 110 to the outside quickly.
简言之,在本实施例封装结构100A的配置中,封装元件130是配置在金属基板110上且位于核心结构层120的开口122中。如此一来,封装元件130是内埋入核心结构层120中,且封装元件130的外引脚132与核心结构层120的图案化导电层124呈共平面,藉此可降低封装结构100A的整体封装高度。此外,封装元件130是配置于金属基板110上,可通过金属基板110的导热性质来提升封装元件130的散热效率。In short, in the configuration of the package structure 100A of this embodiment, the package component 130 is disposed on the metal substrate 110 and located in the opening 122 of the core structure layer 120 . In this way, the package component 130 is embedded in the core structure layer 120, and the external leads 132 of the package component 130 are coplanar with the patterned conductive layer 124 of the core structure layer 120, thereby reducing the overall size of the package structure 100A. package height. In addition, the package component 130 is disposed on the metal substrate 110 , and the heat dissipation efficiency of the package component 130 can be improved through the thermal conductivity of the metal substrate 110 .
在此必须说明的是,下述实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例,下述实施例不再重复赘述。It must be noted here that the following embodiments use the component numbers and part of the content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
图2显示为本发明的另一实施例的一种封装结构的剖面示意图。请同时参考图1与图2,本实施例的封装结构100B与图1的封装结构100A相似,两者的差异在于:本实施例的封装元件230具体化为打线型态的封装元件。详细来说,本实施例的封装元件230包括芯片座231、外引脚232、芯片234、封装胶体236以及多条导线238。芯片234配置于芯片座231上,而导线238电性连接于芯片234与外引脚232之间,且封装胶体236包覆芯片234、芯片座231与导线238且填充于外引脚232之间。外引脚232配置于封装胶体236上,且每一个外引脚232的外表面S1’切齐于图案化导电层124的上表面S2。FIG. 2 is a schematic cross-sectional view of a package structure according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 2 at the same time. The package structure 100B of this embodiment is similar to the package structure 100A of FIG. 1 . The difference between them is that the package component 230 of this embodiment is embodied as a wire-bonded package component. In detail, the packaging component 230 of this embodiment includes a chip holder 231 , external pins 232 , a chip 234 , a packaging compound 236 and a plurality of wires 238 . The chip 234 is disposed on the chip holder 231, and the wire 238 is electrically connected between the chip 234 and the outer pin 232, and the encapsulant 236 covers the chip 234, the chip holder 231 and the wire 238 and fills between the outer lead 232 . The outer leads 232 are disposed on the encapsulant 236, and the outer surface S1' of each outer lead 232 is aligned with the upper surface S2 of the patterned conductive layer 124.
图3显示为本发明的另一实施例的一种封装结构的剖面示意图。请同时参考图1与图3,本实施例的封装结构100C与图1的封装结构100A相似,两者的差异在于:本实施例的金属基板110c还具有凹槽114c,其中封装元件130配置于凹槽114c内,且配置表面112与凹槽114c的底面115c具有高度差H。详细而言,金属基板110c的凹槽114c可用于容纳厚度较大的封装元件130,使封装元件130可被内埋于核心结构层120的开口122中,而达到外引脚132的外表面S1切齐于图案化导电层124的上表面S2,以降低整体封装高度的目的。FIG. 3 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 3 at the same time. The package structure 100C of this embodiment is similar to the package structure 100A of FIG. In the groove 114c, there is a height difference H between the configuration surface 112 and the bottom surface 115c of the groove 114c. In detail, the groove 114c of the metal substrate 110c can be used to accommodate the package component 130 with a large thickness, so that the package component 130 can be embedded in the opening 122 of the core structure layer 120, and reach the outer surface S1 of the outer lead 132 The cutting is aligned with the upper surface S2 of the patterned conductive layer 124 to reduce the height of the overall package.
图4显示为本发明的另一实施例的一种封装结构的剖面示意图。请同时参考图3与图4,本实施例的封装结构100D与图3的封装结构100C相似,两者的差异在于:本实施例的金属基板110d的凹槽114d的底面115d具体化为粗糙表面,其中粗糙表面形例如是矩形锯齿状结构,但本发明并不依此为限。本实施例的金属基板110d的凹槽114d的底面115d可增加绝缘层140与导热胶层160与金属基板110d之间接触面积,以增加与金属基板110d之间的结合力,藉此可提升绝缘层140、导热胶层160与金属基板110d之间的结合强度。FIG. 4 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention. Please refer to FIG. 3 and FIG. 4 at the same time. The package structure 100D of this embodiment is similar to the package structure 100C of FIG. 3 , the difference between the two is that the bottom surface 115d of the groove 114d of the metal substrate 110d of this embodiment is embodied as a rough surface , wherein the rough surface shape is, for example, a rectangular zigzag structure, but the present invention is not limited thereto. The bottom surface 115d of the groove 114d of the metal substrate 110d in this embodiment can increase the contact area between the insulating layer 140 and the thermally conductive adhesive layer 160 and the metal substrate 110d, so as to increase the bonding force with the metal substrate 110d, thereby improving insulation. The bonding strength between the layer 140, the thermally conductive adhesive layer 160 and the metal substrate 110d.
图5显示为本发明的另一实施例的一种封装结构的剖面示意图。请同时参考图1与图5,本实施例的封装结构100E与图1的封装结构100A相似,两者的差异在于:本实施例的封装结构100E还包括表面处理层170,配置于图案化导电层124的上表面S2上与外引脚132的外表面S1上,其中表面处理层170例如是镍层、金层、银层、镍钯金层或其他适当的金属或合金,用以防止图案化导电层124与外引脚132受水氧侵袭而产生氧化的现象。FIG. 5 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 5 at the same time. The package structure 100E of this embodiment is similar to the package structure 100A of FIG. On the upper surface S2 of the layer 124 and on the outer surface S1 of the outer pin 132, wherein the surface treatment layer 170 is, for example, a nickel layer, a gold layer, a silver layer, a nickel-palladium-gold layer or other suitable metals or alloys, in order to prevent pattern The conductive layer 124 and the outer pin 132 are oxidized due to the attack of water and oxygen.
图6显示为本发明的另一实施例的一种封装结构的剖面示意图。请同时参考图1与图6,本实施例的封装结构100F与图1的封装结构100A相似,两者的差异在于:本实施例的封装结构100F还包括防焊层180,配置于核心结构层120上且至少覆盖图案化导电层124与封装元件130的外引脚132。详细而言,在本实施例中,防焊层180覆盖图案化导电层124、图案化导电层124所暴露出的介电层126以及封装元件130的外引脚132与位于外引脚132之间的部分封装胶体136。防焊层180可用以防止图案化导电层124或外引脚132的不正常电性接触,而产生电性干扰或短路等情形。FIG. 6 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 6 at the same time. The package structure 100F of this embodiment is similar to the package structure 100A of FIG. 120 and at least cover the patterned conductive layer 124 and the external leads 132 of the package component 130 . In detail, in this embodiment, the solder resist layer 180 covers the patterned conductive layer 124 , the dielectric layer 126 exposed by the patterned conductive layer 124 , and the outer pins 132 of the package component 130 and those located between the outer pins 132 . Partial encapsulant 136 between them. The solder resist layer 180 can be used to prevent the abnormal electrical contact of the patterned conductive layer 124 or the external pins 132 from causing electrical interference or short circuit.
图7显示为本发明的另一实施例的一种封装结构的剖面示意图。请同时参考图1与图7,本实施例的封装结构100G与图1的封装结构100A相似,两者的差异在于:本实施例的封装结构100G还包括表面处理层170’及防焊层180’。防焊层180’配置于核心结构层120上且覆盖图案化导电层124,其中防焊层180’暴露出图案化导电层124的部分上表面S2。表面处理层170’配置于防焊层180’所暴露出的图案化导电层124的上表面S2上与每一个外引脚132的外表面S1上,以此防止图案化导电层124与外引脚132受到水氧侵袭而产生氧化。封装元件130的每一个外引脚132通过导线W与核心结构层120的图案化导电层124电性连接。进一步而言,导线W的两端是分别电性连接配置在图案化导电层124与引脚132上的表面处理层170’。换言之,本实施例的封装元件130是通过导线W的方式与核心结构层120的图案化导电层124电性连接。FIG. 7 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 7 at the same time. The package structure 100G of this embodiment is similar to the package structure 100A of FIG. '. The solder resist layer 180' is disposed on the core structure layer 120 and covers the patterned conductive layer 124, wherein the solder resist layer 180' exposes part of the upper surface S2 of the patterned conductive layer 124. The surface treatment layer 170' is disposed on the upper surface S2 of the patterned conductive layer 124 exposed by the solder resist layer 180' and on the outer surface S1 of each outer pin 132, so as to prevent the patterned conductive layer 124 from contacting the external leads. The feet 132 are oxidized due to the attack of water and oxygen. Each external lead 132 of the package component 130 is electrically connected to the patterned conductive layer 124 of the core structure layer 120 through a wire W. Further, the two ends of the wire W are respectively electrically connected to the surface treatment layer 170' disposed on the patterned conductive layer 124 and the pin 132. In other words, the packaging component 130 of this embodiment is electrically connected to the patterned conductive layer 124 of the core structure layer 120 through the wire W.
图8显示为本发明的另一实施例的一种封装结构的剖面示意图。请同时参考图6与图8,本实施例的封装结构100H与图6的封装结构100F相似,两者的差异在于:本实施例的封装结构100H还包括电子元件190及多个导电通孔190A。电子元件190配置于防焊层180上。导电通孔190A贯穿防焊层180且暴露部分图案化导电层124,其中电子元件190通过导电通孔190A而电性连接图案化导电层124。此处,电子元件190例如是感测器、发报器、接收器或其他适当的元件,于此并不加以限制。FIG. 8 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present invention. Please refer to FIG. 6 and FIG. 8 at the same time. The package structure 100H of this embodiment is similar to the package structure 100F of FIG. . The electronic component 190 is disposed on the solder resist layer 180 . The conductive via 190A penetrates the solder resist layer 180 and exposes part of the patterned conductive layer 124 , wherein the electronic component 190 is electrically connected to the patterned conductive layer 124 through the conductive via 190A. Here, the electronic component 190 is, for example, a sensor, a transmitter, a receiver or other suitable components, which are not limited here.
综上所述,在本发明的封装结构的配置中,封装元件是配置在金属基板上且位于核心结构层的开口中。如此一来,封装元件是内埋入核心结构层中,且封装元件的外引脚与核心结构层的图案化导电层呈共平面,藉此可降低封装结构的整体封装高度。此外,封装元件是配置于金属基板上,可通过金属基板的导热性质来提升封装元件的散热效率。To sum up, in the configuration of the packaging structure of the present invention, the packaging element is configured on the metal substrate and located in the opening of the core structure layer. In this way, the packaging component is embedded in the core structure layer, and the outer leads of the package component and the patterned conductive layer of the core structure layer are coplanar, thereby reducing the overall package height of the package structure. In addition, the packaging components are configured on the metal substrate, and the heat dissipation efficiency of the packaging components can be improved through the thermal conductivity of the metal substrate.
虽然本发明已以实施例揭示如上,然其并非用以限定本发明,任何所属技术领域中技术人员,在不脱离本发明的精神和范围内,当可作些许的更改与润饰,故本发明的保护范围当视后附的申请专利范围所界定的为准。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be defined by the scope of the appended patent application.
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