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CN108933579B - A surface acoustic wave single-ended pair resonator - Google Patents

A surface acoustic wave single-ended pair resonator Download PDF

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CN108933579B
CN108933579B CN201810653646.8A CN201810653646A CN108933579B CN 108933579 B CN108933579 B CN 108933579B CN 201810653646 A CN201810653646 A CN 201810653646A CN 108933579 B CN108933579 B CN 108933579B
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interdigital transducer
surface acoustic
acoustic wave
sensitive film
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CN108933579A (en
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刘建生
齐晓琳
何世堂
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Institute of Acoustics CAS
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
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Abstract

本发明涉及一种声表面波单端对谐振器,所述单端对谐振器包括:压电基片、第一叉指换能器、第一反射栅和第二反射栅;第一叉指换能器设置在压电基片上,第一反射栅和第二反射栅的结构相同,且对称的设置在第一叉指换能器的两端;还包括:敏感膜和第二叉指换能器;第二叉指换能器设置在第一反射栅和第二反射栅之间,第二叉指换能器与第一叉指换能器的上下回流条相连接;敏感膜设置在第一叉指换能器和第二叉指换能器的中间位置。本发明的谐振器,通过增加一个叉指换能器,保证了谐振器高品质因子和低损耗的优点,有助于提升传感器检测灵敏度、一致性与稳定性。同时在两个叉指换能器之间内置敏感膜,克服敏感膜成膜区域问题,很容易应用到传感器领域。

Figure 201810653646

The invention relates to a surface acoustic wave single-ended pair resonator. The single-ended pair resonator comprises: a piezoelectric substrate, a first interdigital transducer, a first reflection grid and a second reflection grid; a first interdigital The transducer is arranged on the piezoelectric substrate, the first reflection grid and the second reflection grid have the same structure, and are symmetrically arranged at both ends of the first interdigital transducer; it also includes: a sensitive film and a second interdigital transducer The second interdigital transducer is arranged between the first reflection grid and the second reflection grid, and the second interdigital transducer is connected with the upper and lower return bars of the first interdigital transducer; the sensitive film is arranged on the The intermediate position of the first interdigital transducer and the second interdigital transducer. The resonator of the present invention, by adding an interdigital transducer, ensures the advantages of high quality factor and low loss of the resonator, and helps to improve the detection sensitivity, consistency and stability of the sensor. At the same time, a sensitive film is built between the two interdigital transducers, which overcomes the problem of the film-forming area of the sensitive film, and is easily applied to the sensor field.

Figure 201810653646

Description

一种声表面波单端对谐振器A surface acoustic wave single-ended pair resonator

技术领域technical field

本发明涉及声表面波器件领域,尤其涉及一种声表面波单端对谐振器。The invention relates to the field of surface acoustic wave devices, in particular to a surface acoustic wave single-ended pair resonator.

背景技术Background technique

声表面波传感器是近年来发展起来的一种新型微声传感器,是一种用声表面波器件作为传感元件,将被测量的信息通过声表面波器件中声表面波的速度或频率的变化反映出来,并转换成电信号输出的传感器。声表面波传感器能够精确测量物理、化学等信息(如温度、应力、气体密度)。由于体积小,声表面波器件被誉为开创了无线、小型传感器的新纪元;同时,其与集成电路兼容性强,在模拟数字通信及传感领域获得了广泛的应用。声表面波传感器能将信号集中于基片表面、工作频率高,具有极高的信息敏感精度,能迅速地将检测到的信息转换为电信号输出,具有实时信息检测的特性;另外,声表面波传感器还具有微型化、集成化、无源、低成本、低功耗、直接频率信号输出等优点。国内目前已经形成了包括声表面波压力传感器、声表面波温度传感器、声表面波生物基因传感器、声表面波化学气相传感器以及智能传感器等多种类型。A surface acoustic wave sensor is a new type of micro-acoustic sensor developed in recent years. It uses a surface acoustic wave device as a sensing element to pass the measured information through the change of the speed or frequency of the surface acoustic wave in the surface acoustic wave device. It is reflected and converted into an electrical signal output by the sensor. SAW sensors can accurately measure physical, chemical and other information (such as temperature, stress, gas density). Due to its small size, SAW devices are hailed as creating a new era of wireless and small sensors; at the same time, they have strong compatibility with integrated circuits and have been widely used in analog and digital communication and sensing fields. The surface acoustic wave sensor can concentrate the signal on the surface of the substrate, has a high working frequency, has extremely high information sensitivity accuracy, can quickly convert the detected information into electrical signal output, and has the characteristics of real-time information detection; The wave sensor also has the advantages of miniaturization, integration, passive, low cost, low power consumption, direct frequency signal output and so on. At present, various types of surface acoustic wave pressure sensors, surface acoustic wave temperature sensors, surface acoustic wave biological gene sensors, surface acoustic wave chemical gas sensors and smart sensors have been formed in China.

声表面波传感器有两种基本构型,分别为延迟线型和谐振型。其中,延迟线型和谐振型声表面波传感器在结构上均由压电基片、第一叉指换能器和发射栅共同构成。Mauder与Rapp等分别对应用于传感器的这两种结构的振荡器进行了对比:对于SAW延迟线而言,来自振荡环路相位影响很小,覆盖膜材料所引起声波衰减也相对较小,延迟线容易提供单独的成膜区域。但是声表面波延迟线的缺点是插入损耗相对较大。SAW谐振器具有高品质因子和低损耗的特点,由它作为频控元件组成的振荡器容易起振且能获得良好的频率稳定度。但是谐振器很难提供单独的敏感膜成膜区域,限制了需要活性金膜的自组装敏感膜成膜方式的应用。SAW sensors have two basic configurations, delay line type and resonant type. Among them, the delay line type and the resonance type surface acoustic wave sensor are both constituted by the piezoelectric substrate, the first interdigital transducer and the emission grid in structure. Mauder and Rapp et al. respectively compared the oscillators of these two structures applied to the sensor: for the SAW delay line, the phase effect from the oscillation loop is very small, and the acoustic wave attenuation caused by the cover film material is relatively small, and the delay is relatively small. Lines readily provide separate film-forming areas. But the disadvantage of SAW delay lines is the relatively large insertion loss. The SAW resonator has the characteristics of high quality factor and low loss, and the oscillator composed of it as a frequency control element is easy to oscillate and can obtain good frequency stability. However, it is difficult for the resonator to provide a separate sensitive film formation area, which limits the application of the self-assembled sensitive film formation method that requires an active gold film.

发明内容SUMMARY OF THE INVENTION

为了解决上述问题,本发明提出了一种声表面波单端对谐振器。In order to solve the above problems, the present invention proposes a surface acoustic wave single-ended pair resonator.

本发明提供了一种声表面波单端对谐振器,包括:压电基片、第一叉指换能器、第一反射栅和第二反射栅;所述第一叉指换能器设置在所述压电基片上,所述第一反射栅和所述第二反射栅的结构相同,且对称的设置在所述第一叉指换能器的两端;还包括:敏感膜和第二叉指换能器;The invention provides a surface acoustic wave single-ended pair resonator, comprising: a piezoelectric substrate, a first interdigital transducer, a first reflection grid and a second reflection grid; the first interdigital transducer is provided with On the piezoelectric substrate, the first reflection grid and the second reflection grid have the same structure, and are symmetrically arranged at both ends of the first interdigital transducer; further comprising: a sensitive film and a second reflection grid two-finger transducer;

所述第二叉指换能器设置在所述第一反射栅和所述第二反射栅之间,所述第二叉指换能器与所述第一叉指换能器的上下回流条相连接;所述敏感膜设置在所述第一叉指换能器和所述第二叉指换能器的中间位置。The second interdigital transducer is arranged between the first reflection grid and the second reflection grid, and the upper and lower return bars of the second interdigital transducer and the first interdigital transducer connected; the sensitive film is arranged in the middle position of the first interdigital transducer and the second interdigital transducer.

优选地,所述第一叉指换能器和所述第二叉指换能器结构相同,反对称放置。Preferably, the first interdigital transducer and the second interdigital transducer have the same structure and are antisymmetrically placed.

优选地,所述第二叉指换能器设置在所述第一叉指换能器和所述第二反射栅之间。Preferably, the second interdigital transducer is disposed between the first interdigital transducer and the second reflection grating.

优选地,所述敏感膜沉积在所述第一叉指换能器与所述第二叉指换能器的上下回流条相连接构成的区域内,且不接触所述第一叉指换能器和所述第二叉指换能器。Preferably, the sensitive film is deposited in the area formed by the connection between the first interdigital transducer and the upper and lower return bars of the second interdigital transducer, and does not contact the first interdigital transducer and the second interdigital transducer.

优选地,所述第一叉指换能器和所述第二叉指换能器产生的左右声波叠加后,能量集中在所述敏感膜区域内。Preferably, after the left and right sound waves generated by the first interdigital transducer and the second interdigital transducer are superimposed, the energy is concentrated in the sensitive membrane area.

优选地,所述敏感膜为导电性敏感膜和高粘滞性敏感膜。Preferably, the sensitive film is a conductive sensitive film and a high viscosity sensitive film.

本发明的单端对谐振器,通过增加一个叉指换能器,保证了谐振器高品质因子和低损耗的优点,有助于提升传感器检测灵敏度、一致性与稳定性。同时在两个叉指换能器之间内置敏感膜,克服了敏感膜成膜区域问题,很容易应用到传感器领域。另外在沉积敏感膜时避免敏感膜接触到叉指指条的电极,以保证换能器性能和品质因数不受影响。The single-ended pair resonator of the present invention ensures the advantages of high quality factor and low loss of the resonator by adding an interdigital transducer, and helps to improve the detection sensitivity, consistency and stability of the sensor. At the same time, a sensitive film is built between the two interdigital transducers, which overcomes the problem of the film-forming area of the sensitive film, and can be easily applied to the sensor field. In addition, when depositing the sensitive film, it is avoided that the sensitive film touches the electrodes of the interdigital strips, so as to ensure that the performance and quality factor of the transducer are not affected.

附图说明Description of drawings

图1为现有技术中一种声表面波单端对谐振器示意图;1 is a schematic diagram of a surface acoustic wave single-ended pair resonator in the prior art;

图2为现有技术中单端对谐振器在谐振频率时声表面波振幅大小分布图;Fig. 2 is the amplitude distribution figure of surface acoustic wave when single-ended pair resonator in the prior art is resonant frequency;

图3为本发明实施例提供的一种声表面波单端对谐振器示意图;3 is a schematic diagram of a surface acoustic wave single-ended pair resonator provided by an embodiment of the present invention;

图4为本发明实施例提供的单端对谐振器在谐振频率时声表面波振幅大小分布图。FIG. 4 is a distribution diagram of the amplitude of the surface acoustic wave at the resonance frequency of the single-ended pair resonator provided by the embodiment of the present invention.

具体实施方式Detailed ways

为使本发明实施例的技术方案以及优点表达的更清楚,下面通过附图和实施例,对本发明的技术方案做进一步的详细描述。In order to express the technical solutions and advantages of the embodiments of the present invention more clearly, the technical solutions of the present invention are further described in detail below through the accompanying drawings and embodiments.

图1为现有技术中一种声表面波单端对谐振器,包括:压电基片11、第一叉指换能器12、第一反射栅13和第二反射栅14。在该单端对谐振器中,将第一叉指换能器12设置在压电基片11上,第一反射栅13和第二反射栅14分别对称的设置在第一叉指换能器12的两端,其中第一反射栅13和第二反射栅14的结构完全相同。FIG. 1 shows a surface acoustic wave single-ended pair resonator in the prior art, including a piezoelectric substrate 11 , a first interdigital transducer 12 , a first reflection grid 13 and a second reflection grid 14 . In the single-ended pair resonator, the first interdigital transducer 12 is arranged on the piezoelectric substrate 11, and the first reflection grid 13 and the second reflection grid 14 are symmetrically arranged on the first interdigital transducer, respectively. 12, wherein the structures of the first reflection grating 13 and the second reflection grating 14 are completely the same.

根据声学理论可知,单端对谐振器的压电基片11表面声表面波的振幅表达式为:According to the acoustic theory, the amplitude expression of the surface acoustic wave of the piezoelectric substrate 11 of the single-ended pair resonator is:

Figure BDA0001705333240000031
Figure BDA0001705333240000031

其中,a±(x,y)表示周期介质中右向、左向传播的声表面波,A±(x,y)表示周期介质中右向、左向传播的声表面波的振幅,k为延x方向传播的声表面波的波数,k0为未受扰动的声表面波波数。Among them, a ± (x, y) represents the right and left propagating surface acoustic waves in the periodic medium, A ± (x, y) represents the amplitude of the right and left propagating surface acoustic waves in the periodic medium, and k is The wave number of the surface acoustic wave propagating along the x direction, k 0 is the wave number of the unperturbed surface acoustic wave.

根据耦合模方程可以得到:According to the coupled mode equation, we can get:

Figure BDA0001705333240000041
Figure BDA0001705333240000041

Figure BDA0001705333240000042
Figure BDA0001705333240000042

δ=k-jγα11-k0 δ=k-jγ α11 -k 0

其中,κ11和κ12为耦合模参量,α为激发系数,γα为衰减常数,γ为各向异性参数,V为电极之间施加的电压。Among them, κ 11 and κ 12 are the coupled mode parameters, α is the excitation coefficient, γ α is the decay constant, γ is the anisotropy parameter, and V is the voltage applied between the electrodes.

通过计算分别得到右向和左向传播的声表面波,叠加后可得到压电基片11表面声表面波的振幅分布:The right and left propagating surface acoustic waves are obtained by calculation, and the amplitude distribution of the surface acoustic wave of the piezoelectric substrate 11 can be obtained after superposition:

Figure BDA0001705333240000043
Figure BDA0001705333240000043

在一个实施例中,如图2示意了现有技术中单端对谐振器在谐振频率时声表面波振幅大小分布图,其声波能量主要集中在单端对谐振器的中间区域,且声表面振幅大小在95左右。这种结构的单端对谐振器虽然具有低损耗、高品质因数的优点,但是其灵敏度比较低,且由于缺少镀膜区域,很难应用到传感器领域。In one embodiment, as shown in FIG. 2 , the amplitude distribution of the surface acoustic wave of the single-ended pair resonator at the resonant frequency in the prior art is shown, and the acoustic wave energy is mainly concentrated in the middle region of the single-ended pair resonator, and the The amplitude is around 95. Although the single-ended pair resonator of this structure has the advantages of low loss and high quality factor, its sensitivity is relatively low, and it is difficult to apply to the sensor field due to the lack of coating area.

为了克服这个问题,如图3所示的一种声表面波单端对谐振器,在现有的声表面波单端对谐振器中增加了一个敏感膜15和第二叉指换能器16。其中第二叉指换能器16设置在第一反射栅13和第二反射栅14之间,可在第一叉指换能器12的左边,也可在第一叉指换能器12的右边(图3示意的是在第一叉指换能器12的右边),敏感膜设置在第一叉指换能器12和第二叉指换能器16中间位置。In order to overcome this problem, a SAW single-ended pair resonator as shown in FIG. 3 adds a sensitive film 15 and a second interdigital transducer 16 to the existing SAW single-ended pair resonator . The second interdigital transducer 16 is disposed between the first reflection grating 13 and the second reflection grating 14 , either on the left side of the first interdigital transducer 12 or on the side of the first interdigital transducer 12 . On the right side (shown in FIG. 3 is the right side of the first interdigital transducer 12 ), the sensitive film is arranged in the middle of the first interdigital transducer 12 and the second interdigital transducer 16 .

可选地,敏感膜15采用的沉积方法可以是常规的涂附、喷涂等方式实现敏感膜15的沉积。Optionally, the deposition method used for the sensitive film 15 may be conventional coating, spraying, etc. to achieve the deposition of the sensitive film 15 .

可选地,敏感膜15适用于多种敏感膜,在导电性敏感膜和高粘滞性敏感膜上有一定的优势。通过优选导电性敏感膜和高粘滞性敏感膜,避免其它此类敏感膜的沉积导致器件无法使用或品质因数损失较大的现象。Optionally, the sensitive film 15 is suitable for a variety of sensitive films, and has certain advantages in conductive sensitive films and high-viscosity sensitive films. By preferring conductive sensitive films and highly viscous sensitive films, the phenomenon that the deposition of other such sensitive films can lead to unusable devices or large loss of quality factor is avoided.

可选地,第一叉指换能器12和第二叉指换能器16结构相同,反对称放置,相当于叉指指条121的数目增加了一倍,使得单端对谐振器在谐振频率时,激发的声表面波数目也增加一倍,叠加后的振幅也会增大一倍。Optionally, the first interdigital transducer 12 and the second interdigital transducer 16 have the same structure and are placed anti-symmetrically, which is equivalent to doubling the number of interdigital finger strips 121, so that the single-ended pair resonator is at resonance. When the frequency is increased, the number of excited surface acoustic waves also doubles, and the amplitude after superposition also doubles.

可选地,第一叉指换能器12和第二叉指换能器16的回流条122要相连接,这样以保证两个叉指换能器中间规划出一个用于沉积敏感膜15的区域。Optionally, the return bars 122 of the first interdigital transducer 12 and the second interdigital transducer 16 should be connected, so as to ensure that a space for depositing the sensitive film 15 is planned between the two interdigital transducers. area.

可选地,沉积后敏感膜15不接触第一叉指换能器12和第二叉指换能器16,以避免敏感膜15接触叉指指条121的电极后换能器性能损坏,同时也避免敏感膜15接触叉指指条121的电极引起的换能器品质因数的下降。Optionally, the sensitive film 15 does not contact the first interdigital transducer 12 and the second interdigital transducer 16 after deposition, so as to avoid damage to the transducer performance after the sensitive film 15 contacts the electrodes of the interdigital finger strip 121 , and at the same time The reduction of the transducer quality factor caused by the contact of the sensitive film 15 with the electrodes of the interdigital finger strips 121 is also avoided.

由于声表面波单端对谐振器采用的对称结构,左右向传播的声表面波叠加后振幅的最大值出现中间位置,所以将敏感膜15选在中间区域可使得声表面波单端对谐振器的灵敏度最大。Due to the symmetrical structure of the surface acoustic wave single-ended pair resonator, the maximum amplitude of the surface acoustic waves propagating in the left and right directions appears in the middle position, so selecting the sensitive film 15 in the middle area can make the surface acoustic wave single-ended pair resonator. maximum sensitivity.

在一个实施例中,如图4示意了本发明实施例中单端对谐振器在谐振频率时声表面波振幅大小分布图,声表面振幅大小在190左右.通过对比图2中现有技术中单端对谐振器的声表面波振幅,本发明单端对谐振器的振幅是现有技术单端对谐振器的一倍,这样可以大幅度提升传感器检测灵敏度、一致性与稳定性,且提供了镀膜区域,通过沉积敏感膜,使得单端对谐振器很容易应用到传感器领域。In one embodiment, FIG. 4 illustrates the distribution of the SAW amplitude of the single-ended pair resonator at the resonant frequency in the embodiment of the present invention, and the SAW amplitude is about 190. By comparing the prior art in FIG. 2 The amplitude of the surface acoustic wave of the single-ended pair of resonators, the amplitude of the single-ended pair of resonators of the present invention is twice that of the single-ended pair of resonators of the prior art, which can greatly improve the detection sensitivity, consistency and stability of the sensor, and provide The single-ended pair resonator can be easily applied to the sensor field by depositing a sensitive film.

需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。It should be noted that, in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any relationship between these entities or operations. any such actual relationship or sequence exists.

以上所述的具体实施方式,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施方式而已,并不用于限定本发明的保护范围,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above further describe the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention, and are not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (6)

1.一种声表面波单端对谐振器,包括:压电基片(11)、第一叉指换能器(12)、第一反射栅(13)和第二反射栅(14);所述第一叉指换能器(12)设置在所述压电基片(11)上,所述第一反射栅(13)和所述第二反射栅(14)的结构相同,且对称的设置在所述第一叉指换能器(12)的两端;其特征在于,还包括:敏感膜(15)和第二叉指换能器(16);1. A surface acoustic wave single-ended pair resonator, comprising: a piezoelectric substrate (11), a first interdigital transducer (12), a first reflection grid (13) and a second reflection grid (14); The first interdigital transducer (12) is arranged on the piezoelectric substrate (11), and the first reflection grating (13) and the second reflection grating (14) have the same structure and are symmetrical are arranged at both ends of the first interdigital transducer (12); it is characterized in that it further comprises: a sensitive film (15) and a second interdigital transducer (16); 所述第二叉指换能器(16)设置在所述第一反射栅(13)和所述第二反射栅(14)之间,所述第二叉指换能器(16)与所述第一叉指换能器(12)的上下回流条(122)相连接;所述敏感膜(15)设置在所述第一叉指换能器(12)和所述第二叉指换能器(16)的中间位置。The second interdigital transducer (16) is arranged between the first reflection grating (13) and the second reflection grating (14), and the second interdigital transducer (16) is connected to the The upper and lower return bars (122) of the first interdigital transducer (12) are connected; the sensitive film (15) is arranged between the first interdigital transducer (12) and the second interdigital transducer (12) The middle position of the energy device (16). 2.根据权利要求1所述的声表面波单端对谐振器,其特征在于,所述第一叉指换能器(12)和所述第二叉指换能器(16)结构相同,反对称放置。2. The surface acoustic wave single-ended pair resonator according to claim 1, wherein the first interdigital transducer (12) and the second interdigital transducer (16) have the same structure, Antisymmetric placement. 3.根据权利要求1所述的声表面波单端对谐振器,其特征在于,所述第二叉指换能器(16)设置在所述第一叉指换能器(12)和所述第二反射栅(14)之间。3. The surface acoustic wave single-ended pair resonator according to claim 1, wherein the second interdigital transducer (16) is arranged between the first interdigital transducer (12) and the between the second reflection gratings (14). 4.根据权利要求1所述的声表面波单端对谐振器,其特征在于,所述敏感膜(15)沉积在所述第一叉指换能器(12)与所述第二叉指换能器(16)的上下回流条(122)相连接构成的区域内,且不接触所述第一叉指换能器(12)和所述第二叉指换能器(16)。4. The surface acoustic wave single-ended pair resonator according to claim 1, wherein the sensitive film (15) is deposited on the first interdigital transducer (12) and the second interdigital transducer (12) The upper and lower return bars (122) of the transducer (16) are connected to form the area, and do not contact the first interdigital transducer (12) and the second interdigital transducer (16). 5.根据权利要求1所述的声表面波单端对谐振器,其特征在于,所述第一叉指换能器(12)和所述第二叉指换能器(16)产生的左右声波叠加后,能量集中在所述敏感膜(15)区域内。5. The surface acoustic wave single-ended pair resonator according to claim 1, wherein the left and right generated by the first interdigital transducer (12) and the second interdigital transducer (16) After the sound waves are superimposed, the energy is concentrated in the area of the sensitive film (15). 6.根据权利要求1所述的声表面波单端对谐振器,其特征在于,所述敏感膜(15)为导电性敏感膜和高粘滞性敏感膜。6. The surface acoustic wave single-ended pair resonator according to claim 1, wherein the sensitive film (15) is a conductive sensitive film and a high-viscosity sensitive film.
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CN110231399A (en) * 2019-07-08 2019-09-13 电子科技大学 A kind of Surface Acoustic Waves Humidity Sensor based on bacteria cellulose sensing membrane
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1677853A (en) * 2004-03-30 2005-10-05 中国科学院声学研究所 Surface Acoustic Wave Oscillator System for Gas Sensors
CN101865884A (en) * 2009-11-24 2010-10-20 中国科学院声学研究所 A double-terminal-pair resonant surface acoustic wave detector with single-mode prominence
CN102739186A (en) * 2011-03-31 2012-10-17 三星电机株式会社 Piezoelectric resonator and electrode structure thereof
CN102798663A (en) * 2012-08-17 2012-11-28 天津理工大学 SAW gas sensor applying dispersion interdigital transducer
CN105716759A (en) * 2016-02-02 2016-06-29 上海交通大学 Rotating shaft torque measuring device based on surface transverse wave
CN106442717A (en) * 2016-10-25 2017-02-22 中国工程物理研究院激光聚变研究中心 Surface acoustic wave transducer for detecting volatile organic pollutants

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103066943B (en) * 2012-12-21 2015-09-09 中国科学院声学研究所 A kind of SAW (Surface Acoustic Wave) resonator for gas sensor
CN103066945B (en) * 2012-12-21 2015-11-04 中国科学院声学研究所 SAW resonant oscillator system for gas sensor
CN103117727A (en) * 2013-02-06 2013-05-22 中国电子科技集团公司第二十六研究所 High-impedance surface acoustic wave resonator
US20170104470A1 (en) * 2015-10-09 2017-04-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Interdigitated transducers and reflectors for surface acoustic wave devices with non-uniformly spaced elements

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1677853A (en) * 2004-03-30 2005-10-05 中国科学院声学研究所 Surface Acoustic Wave Oscillator System for Gas Sensors
CN101865884A (en) * 2009-11-24 2010-10-20 中国科学院声学研究所 A double-terminal-pair resonant surface acoustic wave detector with single-mode prominence
CN102739186A (en) * 2011-03-31 2012-10-17 三星电机株式会社 Piezoelectric resonator and electrode structure thereof
CN102798663A (en) * 2012-08-17 2012-11-28 天津理工大学 SAW gas sensor applying dispersion interdigital transducer
CN105716759A (en) * 2016-02-02 2016-06-29 上海交通大学 Rotating shaft torque measuring device based on surface transverse wave
CN106442717A (en) * 2016-10-25 2017-02-22 中国工程物理研究院激光聚变研究中心 Surface acoustic wave transducer for detecting volatile organic pollutants

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