CN108866478B - Mask manufacturing method and mask - Google Patents
Mask manufacturing method and mask Download PDFInfo
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- CN108866478B CN108866478B CN201810777200.6A CN201810777200A CN108866478B CN 108866478 B CN108866478 B CN 108866478B CN 201810777200 A CN201810777200 A CN 201810777200A CN 108866478 B CN108866478 B CN 108866478B
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- high polymer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002861 polymer material Substances 0.000 claims abstract description 102
- 238000005530 etching Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000003292 glue Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 138
- 230000004888 barrier function Effects 0.000 claims description 30
- 230000005291 magnetic effect Effects 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 7
- -1 polyethylene terephthalate Polymers 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 5
- 238000004049 embossing Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 3
- 229910001374 Invar Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000181 anti-adherent effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention relates to the technical field of masks, and provides a method for manufacturing a mask, which comprises the following steps: forming a high polymer material layer on a bearing substrate; forming imprinting glue on the high polymer material layer; imprinting the imprinting glue by using a mold corresponding to the mask plate pattern; etching the imprinted glue and the polymer material layer after imprinting so as to form mask patterns on the polymer material layer; and stripping the bearing substrate from the high polymer material layer to form the mask. The thin polymer material layer can be formed to serve as a mask plate through the process. On one hand, the thinner polymer material layer can be provided with holes with higher density as mask patterns; on the other hand, the density of the polymer material is smaller, and when the polymer material layer is tensioned, the yield force of each position of the polymer material layer is more uniform, so that the patterns on the mask plate are more uniform.
Description
Technical Field
The invention relates to the technical field of masks, in particular to a mask manufacturing method and a mask.
Background
The mask plate is a plate body structure with openings, the openings on the mask plate form mask patterns of the mask plate, and patterns corresponding to the mask patterns can be formed on the substrate through the mask patterns. For example, in the OLED manufacturing process, a mask is generally used to vapor-deposit R, G, B luminescent material in the open-pore region of the array substrate corresponding to the mask pattern.
In the related art, the method for manufacturing the mask generally includes etching, laser and electroplating. The etching method and the laser method are used for forming an opening pattern of the mask on a plate of the mask, and the electroplating method is used for forming the mask pattern by depositing on a metal substrate.
However, conventional reticle plates are typically made of Invar (Invar), which typically has a thickness of 20 to 50 microns. When the mask is manufactured by an etching method or a laser method, the thickness of the invar alloy plate limits the density of the openings on the mask. When the high-density open-pore mask plate is manufactured by adopting an electroplating method, the mask plate formed on the metal substrate needs to be peeled off from the metal substrate by adopting a manual mechanical mode, and the method has a certain damage to the mask plate.
It should be noted that the information of the present invention in the above background section is only for enhancing the understanding of the background of the present invention and thus may include information that does not form the prior art that is already known to those of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a manufacturing method of a mask and the mask. The method forms the mask plate composed of the high polymer material by stamping, etching and other methods, thereby solving the technical problem that high-density open pores cannot be formed on the mask plate in the related technology.
Other features and advantages of the invention will be apparent from the following detailed description, or may be learned by the practice of the invention.
According to one aspect of the present invention, there is provided a method for manufacturing a mask, the method comprising:
forming a high polymer material layer on a bearing substrate;
forming imprinting glue on the high polymer material layer;
imprinting the imprinting glue by using a mold corresponding to the mask plate pattern;
etching the imprinting glue and the high polymer material layer after imprinting, so as to form the mask pattern on the high polymer material layer;
and stripping the bearing substrate from the high polymer material layer to form a mask.
In an exemplary embodiment of the present invention, the polymer material layer is any one of polyimide, polyethylene terephthalate, and cyclic olefin polymer.
In an exemplary embodiment of the present invention, the carrier substrate is a transparent substrate, and the peeling the carrier substrate from the polymer material layer includes:
and irradiating one side of the transparent substrate far away from the high polymer material by using laser, so as to peel the transparent substrate from the high polymer material layer.
In an exemplary embodiment of the present invention, before forming the imprint gum on the polymer material layer, the method further includes: and forming an etching barrier layer on the high polymer material layer, wherein the etched speed of the etching barrier layer is smaller than the etched speed of the high polymer material layer.
In an exemplary embodiment of the present invention, after etching the imprint resist and before peeling the carrier substrate from the polymer material layer, the method further includes: and forming a protective layer on the etching barrier layer.
In an exemplary embodiment of the present invention, after forming the protective layer on the etching barrier layer, the method further includes: and forming a magnetic layer on one side of the high polymer material layer far away from the etching barrier layer.
In an exemplary embodiment of the present invention, after forming the magnetic layer on the side of the polymer material layer away from the etching stopper layer, the method further includes: and stripping the protective layer.
According to one aspect of the present invention, there is provided a reticle comprising:
the high polymer material layer is provided with mask patterns; the high polymer material layer is any one of polyimide, polyethylene terephthalate and cycloolefin polymer.
According to one aspect of the invention, the thickness of the polymer material layer is 0.5um to 3um.
According to one aspect of the present invention, the reticle further comprises: the barrier layer and the magnetic layer are etched. The etching barrier layer is positioned on one side of the high polymer material layer; the magnetic layer is positioned on the other side of the high polymer material layer and is used for adsorbing the mask plate on the array substrate.
The invention provides a mask manufacturing method and a mask. The thin polymer material layer can be formed to serve as a mask through technologies such as imprinting and etching. On one hand, the thinner polymer material layer can be provided with holes with higher density as mask patterns; on the other hand, the density of the polymer material is smaller, and when the polymer material layer is tensioned, the yield force of each position of the polymer material layer is more uniform, so that the patterns on the mask plate are more uniform.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. It is evident that the drawings in the following description are only some embodiments of the present invention and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a flow chart of an exemplary embodiment of a reticle fabrication method of the present disclosure;
fig. 2 to 8 are schematic structural diagrams of structural changes of each film layer when the method for manufacturing a mask provided by the present exemplary embodiment is adopted;
FIG. 9 is a cross-sectional view of a mold in an exemplary embodiment of the present disclosure;
FIG. 10 is a schematic diagram of an exemplary embodiment of a disclosed reticle;
FIG. 11 is a cross-sectional view of an exemplary embodiment of a disclosed reticle;
FIG. 12 is a graph comparing yield force distribution of a reticle of the present disclosure with that of a reticle simulation of the related art.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus detailed descriptions thereof will be omitted.
Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification for convenience only, such as in terms of the orientation of the examples described in the figures. It will be appreciated that if the device of the icon is flipped upside down, the recited "up" component will become the "down" component. Other relative terms such as "high," "low," "top," "bottom," "left," "right," and the like are also intended to have similar meanings. When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure through another structure.
The terms "a," "an," "the" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. in addition to the listed elements/components/etc.
The present exemplary embodiment provides a method for manufacturing a mask, as shown in fig. 1 to 8, and fig. 1 is a flowchart of an exemplary embodiment of the method for manufacturing a mask of the present disclosure. Fig. 2 to 8 are schematic structural diagrams of structural changes of each film layer when the method for manufacturing a mask provided by the present exemplary embodiment is adopted. The method comprises the following steps:
step S1: forming a high polymer material layer on a bearing substrate;
step S2: forming imprinting glue on the high polymer material layer;
step S3: imprinting the imprinting glue by using a mold corresponding to the mask plate pattern;
step S4: etching the imprinting glue and the high polymer material layer after imprinting, so as to form the mask pattern on the high polymer material layer;
step S5: and stripping the bearing substrate from the high polymer material layer to form a mask.
The invention provides a mask manufacturing method and a mask. The thin polymer material layer can be formed to serve as a mask through technologies such as imprinting and etching. On the one hand, the thin polymer material layer can be provided with holes with higher density as mask patterns, and the mask manufactured by the method can be applied to the evaporation process of the luminescent material of the display panel, so that the manufacturing of the high-pixel display panel is satisfied; on the other hand, the density of the polymer material is smaller, and when the polymer material layer is tensioned, each position of the polymer material layer is less influenced by self gravity, so that the yield force of each position of the polymer material layer is more uniform, and the mask pattern on the mask plate is more uniform.
The following describes the above steps in detail:
step S1: and forming a high polymer material layer on the bearing substrate. As shown in fig. 2, in the present exemplary embodiment, the polymer material may be coated on the carrier substrate 1 by a coating process, and the polymer material may form a thinner polymer material layer 2 due to the nature of the polymer material itself. The high polymer material can be any one of polyimide, polyethylene terephthalate and cycloolefin polymer, and the thickness of the high polymer material layer can be 0.5um-3um.
Step S2: an imprint resist 3 is formed on the polymer material layer 2. In the present exemplary embodiment, step S4 is performed: when the imprinting glue and the polymer material layer after imprinting are etched, the imprinting glue 3 is an organic matter, so that the etched speed of the imprinting glue 3 is high, and the imprinting glue 3 may be etched before the polymer material layer 2 is etched. In this exemplary embodiment, before forming the imprint resist 3 on the polymer material layer 2, the method may further include: an etching barrier layer 4 is formed on the polymer material layer 2, and the etching rate of the etching barrier layer 4 may be less than the etching rate of the polymer material layer 2. In step 4: when the imprinting glue and the high polymer material layer after imprinting are etched, firstly, the etching barrier layer 4 and the imprinting glue 3 are etched, a mask pattern is formed on the etching barrier layer 4, after the position of an opening on the etching barrier layer 4 is etched through, the high polymer layer starts to be etched, and when the imprinting glue is etched, etching substances can be blocked by the part, outside the position of the opening on the etching barrier layer 4, of the high polymer material layer, so that damage to the high polymer material layer by the etching substances is avoided. The etching speed of the etching barrier layer 4 is smaller than that of the polymer material layer 2, so that the time for the etching barrier layer to block etching substances can be increased, and the polymer material layer is ensured to be etched through before the etching barrier layer is etched. The etching barrier layer can be made of film materials with low thermal expansion coefficients such as SiOx and SiN, so that thermal deformation of the etching barrier layer in the processing process is avoided, and the thickness of the etching barrier layer can be 300-3000 m.
Step S3: and imprinting the imprinting glue by using a mold corresponding to the mask plate pattern. As shown in fig. 9, a cross-sectional view of a mold in an exemplary embodiment of the present disclosure. The mold may include a plate-shaped body 51 and an embossing protrusion 52 on one side of the plate-shaped body 51, and the embossing protrusion 52 may have an anti-adhesive layer 53 formed thereon. The embossing protrusions 52 correspond to openings in the mask pattern. As shown in fig. 3, a mask pattern may be formed on the imprint resist 3 by pressing the imprint resist with the imprint protrusion of the mold. The resist layer 53 facilitates separation of the mold from the imprint resist.
Step S4: etching the imprinted glue and the polymer material layer after imprinting, as shown in fig. 4, the mask pattern can be formed on the polymer material layer by etching. In step 4, the imprint resist and the polymer material layer may be etched by using an Inductively Coupled Plasma (ICP) etching technique. When the etching barrier layer is formed on the polymer material layer, the etching barrier layer is also required to be etched in step 4.
Step S5: and stripping the bearing substrate from the high polymer material layer to form a mask. In this exemplary embodiment, after the carrier substrate is peeled from the polymer material layer, the polymer material layer is thinner, and is easy to be bent and damaged without supporting. In this exemplary embodiment, as shown in fig. 5, after etching the imprint resist and before peeling the carrier substrate from the polymer material layer, the method may further include: a protective layer 5 is formed on the etch stop layer. The protective layer 5 may include a substrate selected from polyimide, polyethylene terephthalate, transparent polyimide, etc., and an adhesive layer selected from pressure-sensitive adhesive, PU-type adhesive, etc.
In this exemplary embodiment, the carrier substrate may be a transparent substrate, and the side of the transparent substrate away from the polymer material may be irradiated with laser light, so that the transparent substrate is peeled from the polymer material layer. As shown in fig. 6, the laser irradiation of the side of the transparent substrate away from the polymer material layer may destroy the molecular structure of the side of the polymer material layer close to the transparent substrate, thereby peeling the transparent substrate. The transparent substrate may be any one of high temperature glass, quartz, and organic glass. It should be appreciated that in other exemplary embodiments, there are many more options for peeling the carrier substrate from the polymer material layer, for example, by peeling off a dipping solution, etc., which are all within the scope of the present disclosure.
In this exemplary embodiment, as shown in fig. 7, after forming the protective layer on the etching stopper layer, the method may further include: and forming a magnetic layer 6 on one side of the high polymer material layer away from the etching barrier layer. The magnetic layer can enable the mask plate to be closely attached to the substrate under the action of the magnetic field, so that shadow is prevented from being generated when mask patterns are evaporated on the substrate. Wherein, the magnetic layer can be formed on the high-molecular material layer by vapor deposition, sputtering, etc., and the magnetic layer can be made of one or more ferromagnetic materials such as invar alloy, nickel-iron alloy, nickel-cobalt alloy or nickel-iron-cobalt alloy. The thickness of the magnetic layer may be selected to be 0.5um to 5um.
In this exemplary embodiment, as shown in fig. 8, after forming the magnetic layer on the side of the polymer material layer away from the etching stopper layer, the method may further include: and stripping the protective layer to form a mask, wherein the stripping of the protective layer can adopt the laser stripping technology.
The present exemplary embodiment further provides a mask, as shown in fig. 10 and 11, fig. 10 is a schematic structural diagram of an exemplary embodiment of the disclosure mask, and fig. 11 is a cross-sectional view of an exemplary embodiment of the disclosure mask. The mask comprises a high polymer material layer 7, wherein a mask pattern 71 is formed on the high polymer material layer; the high polymer material layer is any one of polyimide, polyethylene terephthalate and cycloolefin polymer. In fig. 10, two mask patterns are disposed on one mask, and the mask can simultaneously perform pattern deposition on two substrates.
In this exemplary embodiment, the thickness of the polymer material layer may be 0.5um to 3um.
In this exemplary embodiment, the mask further includes: an etch stop layer 8 and a magnetic layer 9. The etching barrier layer 8 is positioned on one side of the high polymer material layer 7; the magnetic layer 9 is located at the other side of the polymer material layer 7, and is used for adsorbing the mask on the array substrate.
In this exemplary embodiment, as shown in fig. 12, a comparison chart of the distribution of yield force when the mask plate of the present disclosure and the mask simulation in the related art simulate a screen. When the mask provided by the disclosure is stretched by 4N stretching force, the right side is a distribution diagram of yield force at each position, and the left side is a distribution diagram of yield force at each position when the mask made of Invar (Invar) is stretched by related technology. Obviously, the pulling force that needs when the mask provided by this disclosure opens the net is less, and the yield force distribution in each position on the mask is more even, therefore the mask that this disclosure provided is when opening the net, each through-hole size on the mask pattern is more even.
The mask provided by the present exemplary embodiment may be manufactured by using the above mask manufacturing method, and has the same technical features and working principles as those of the above mask manufacturing method, and the above details have been specifically described and will not be repeated here. The mask provided by the embodiment can be used for depositing luminescent materials such as R, G, B in the manufacture of display panels, thereby realizing the manufacture of high-resolution display panels.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any adaptations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
It is to be understood that the present disclosure is not limited to the precise arrangements and instrumentalities shown in the drawings, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.
Claims (4)
1. A manufacturing method of a mask plate is characterized by comprising the following steps:
forming a high polymer material layer on a bearing substrate;
forming imprinting glue on the high polymer material layer;
imprinting the imprinting glue by using a mold corresponding to the mask plate pattern;
etching the imprinted glue and the high polymer material layer, so as to form the mask pattern on the high polymer material layer;
stripping the bearing substrate from the high polymer material layer so as to form a mask;
the method for forming the embossing glue on the high polymer material layer further comprises the following steps:
forming an etching barrier layer on the high polymer material layer, wherein the etching speed of the etching barrier layer is smaller than that of the high polymer material layer;
after etching the imprint resist and before peeling the carrier substrate from the polymer material layer, the method further comprises:
forming a protective layer on the etching barrier layer;
after forming the protective layer on the etching barrier layer, the method further comprises:
forming a magnetic layer on one side of the high polymer material layer far away from the etching barrier layer in an evaporation or sputtering mode;
the high polymer material layer is any one of polyimide, polyethylene terephthalate and cycloolefin polymer;
the thickness of the high polymer material layer is 0.5um-3um;
the thickness of the etching barrier layer is 300-3000 m;
the thickness of the magnetic layer is 0.5um-5um.
2. The method for manufacturing a mask according to claim 1, wherein the carrier substrate is a transparent substrate, and the peeling the carrier substrate from the polymer material layer comprises:
and irradiating one side of the transparent substrate far away from the high polymer material layer by using laser so as to peel the transparent substrate from the high polymer material layer.
3. The method of claim 1, further comprising, after forming a magnetic layer on a side of the polymer material layer away from the etching barrier layer:
and stripping the protective layer.
4. A reticle produced by the reticle production method according to any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810777200.6A CN108866478B (en) | 2018-07-16 | 2018-07-16 | Mask manufacturing method and mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810777200.6A CN108866478B (en) | 2018-07-16 | 2018-07-16 | Mask manufacturing method and mask |
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| Publication Number | Publication Date |
|---|---|
| CN108866478A CN108866478A (en) | 2018-11-23 |
| CN108866478B true CN108866478B (en) | 2023-07-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810777200.6A Active CN108866478B (en) | 2018-07-16 | 2018-07-16 | Mask manufacturing method and mask |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113817981B (en) * | 2020-06-18 | 2022-09-30 | 中国科学技术大学 | Mask and method of making the same |
| CN116162893B (en) * | 2023-02-17 | 2024-10-18 | 京东方科技集团股份有限公司 | Mask plate and evaporation device |
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| US20050040032A1 (en) * | 2003-08-18 | 2005-02-24 | Yuan-Chang Lai | Stamper forming method |
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| CN108277454B (en) * | 2018-04-23 | 2021-01-26 | 京东方科技集团股份有限公司 | Fine mask plate and preparation method thereof |
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