CN108831994A - A kind of preparation method of biomemristor based on garlic - Google Patents

Abstract

The invention discloses a method for preparing a biomemristor based on garlic, which comprises the following steps: S1, using garlic as a raw material to prepare garlic powder with a particle size of 0.5-2 μm; S2, mixing garlic powder and polyvinylidene fluoride powder Mix evenly according to the mass ratio of 4:1, then dissolve the mixed powder in the sodium perchlorate electrolyte to obtain the colloid; S3, make the colloid on the conductive surface of the conductive substrate as a dielectric layer, and then dry it processing; S4, placing the conductive substrate with the dielectric layer in the PH solution for a while to take out, and then performing drying treatment, the pH value of the PH solution is 5 to 7; S5, after the treatment in step S4, on the surface of the dielectric layer The top electrode is deposited, that is, a biomemristor with a top electrode/garlic powder/substrate structure is obtained. The preparation method can effectively solve the pollution problem of current electronic products and reduce costs. Compared with other plants, garlic is not only edible but also can be used to treat related diseases, and the prepared memristor has good memristive effect.

Description

A kind of preparation method of biomemristor based on garlic

technical field

The invention belongs to the technical field of semiconductor thin film devices and memory manufacturing thereof, and in particular relates to a preparation method of garlic-based biomemristors.

Background technique

With the rapid development of information technology, electronic products have played an important role in people's lives, appearing in almost every corner of people's lives. However, once these electronic devices expire, a large amount of electronic waste will be generated to endanger our environment and health. Therefore, it is very important to find an environmentally friendly and green method for the preparation of electronic devices. As far as memory is concerned, most of the current market uses magnetic memory, and electromagnetic radiation can cause changes in blood, lymph and cell protoplasm. Jin Shuqin, a Ph.D. in environmental economics from Renmin University of China, pointed out that the harm caused by magnetic pollution to the human body has an additive effect, and can genetically change various human functions, and this change is long-term, and sometimes even takes several generations to appear. Among the current memory devices, memristors have attracted the attention of researchers for their advantages of fast read and write speed, low power consumption, and high storage density.

Memristor random access memory (RRAM) is a memory based on the memristive effect, referred to as memristor. Its basic structure is top electrode/dielectric layer or active layer/bottom electrode. Generally, one of the two electrodes is an active electrode and the other is an inert electrode. Typically, the top electrode is metal. When a voltage pulse is applied to the top electrode, the resistance of the intermediate dielectric layer or active layer can be switched between a high resistance state (HRS) and a low resistance state (LRS). Define the high-impedance state as the logic state '0', and the low-impedance state as the logic state '1', so as to realize the writing and reading of data. The memristor memory unit is small and has good scalability, which is the most potential candidate for the next generation of new concept memory. In addition, if green and environmentally friendly biological materials are used as the intermediate dielectric layer, not only the cost of memristive devices can be reduced, but also the harm of electromagnetic radiation to the body and the environment can be greatly reduced. Biomaterials are degradable and compatible, so memristors prepared using such materials can be used to diagnose human diseases and track diseased cells in the human body in the future. The memristive devices fabricated using this material are simple and can be used on printed circuit boards at room temperature, offering potential for the development of wearable and flexible electronics in the future.

At present, research on memristors mainly focuses on semiconductor materials, such as ZnO, TiO ₂ , Al ₂ O ₃ , BiFeO ₃ , ZrO ₂ , NiO, SrTiO ₃ , Fe ₂ O ₃ and other materials. Such semiconductor materials are difficult to obtain, expensive, difficult to recycle, and have low sustainable utilization rate, and some semiconductor materials are toxic, which has a great negative impact on the environment and human body. Therefore, there is an urgent need to develop a new device fabrication scheme to meet the current needs. Therefore, in this invention, we used garlic as the dielectric layer of the device to prepare a memristive device, which is environmentally friendly, non-toxic, and harmless. Therefore, memristive devices made of garlic are potentially low-cost and will be very meaningful in the long run. At present, because the existing storage technology cannot meet the development of current information technology, memristors have attracted the attention of researchers because of their small storage unit and high storage density. However, at present, scientists' research on memristor materials mainly focuses on semiconductor materials, and few people pay attention to the memristive effect of biological materials. This will greatly limit the use value of biological materials. Therefore, in our work, we used the biomaterial garlic as a raw material to fabricate a set of memristive devices with Ag/garlic powder/FTO structure at different pH values. It will be of great significance to study the method of preparing electronic devices from biological materials, which will provide a new way to realize electronic devices with better performance.

Contents of the invention

The purpose of the present invention is to solve the above problems and provide a preparation method of garlic-based biomemristor. The preparation method is worthy of simple structure, good performance, stability, low power consumption and good repeatability. Conceptual memory lays a good foundation.

In order to solve the above-mentioned technical problems, the technical solution of the present invention is: a kind of preparation method of biomemristor based on garlic, comprises the steps:

S1. Garlic powder with a particle size of 0.5-2 μm is prepared by using garlic as a raw material, and is set aside;

S2. Mix garlic powder and polyvinylidene fluoride powder evenly in a mass ratio of 2 to 4:1, and then dissolve the mixed powder in sodium perchlorate electrolyte to prepare a colloid for use;

S3, making the colloid obtained in step S2 into a thin film on the conductive surface of the conductive substrate as a dielectric layer, and drying the conductive substrate with the dielectric layer;

S4. Place the conductive substrate with the dielectric layer in the PH solution for a while to take it out, and then perform drying treatment. The pH value of the PH solution is 5-7;

S5. After the treatment in step S4, the upper electrode is deposited on the surface of the dielectric layer to obtain a biomemristor having a top electrode/garlic powder/substrate structure.

It should be noted that the mass ratio of garlic powder to polyvinylidene fluoride powder of 2-4:1 is a ratio obtained through a large number of experiments and comparisons by the inventors, within this ratio range, the best experimental results can be obtained.

In the above technical solution, in the step S1, the specific steps of obtaining garlic powder are as follows: after washing the garlic with deionized water, making garlic thin slices and placing them in a container to dry to constant weight, taking them out and then crushing, grinding, Sieve and filter to obtain garlic powder with a particle size of 0.5-2 μm.

In the above technical solution, in the step S3, the drying treatment conditions are: in a drying oven at a temperature of 25-40° C., and the drying time is 30-45 hours.

In the above technical solution, in the step S3, the colloid obtained in the step S2 is spin-coated into a thin film on the conductive surface of the conductive substrate by a spin-coating method.

In the above technical solution, in step S3, the thickness of the film is 15-35 μm.

In the above technical solution, in the step S5, the top electrode is deposited on the surface of the dielectric layer by magnetron sputtering vacuum deposition method.

In the above technical solution, the top electrode is one of silver, titanium, gold, aluminum or copper.

In the above technical solution, the conductive substrate may be, but not limited to, a flat glass or quartz substrate with a conductive thin film.

In the above technical solution, the conductive substrate is one of fluorine-doped tin dioxide transparent conductive glass (FTO), copper sheet, aluminum sheet or titanium sheet.

The beneficial effects of the present invention are: the preparation method of a biomemristor based on garlic provided by the present invention, the ultrafine garlic powder is prepared by the method of grinding and screening, and the plant powder film is spin-coated on the conductive substrate, and the biological material is used The preparation of useful devices not only reduces the cost of electronic devices, but also has the advantages of non-toxic and harmless electronic devices prepared by using biological materials. The memristive device prepared by the present invention has a simple structure, and the formation and fusing of conductive filaments in the middle layer are easy. The device exhibits memristive effect. Writing and reading data are implemented using different logic states. Because the device has a very low current, the power consumption of the device is greatly reduced, and a solution is provided for solving the harm caused by the heating of the electronic device at present. So far, no environmental-friendly biological memristive devices have been reported, so the present invention is a pioneering invention, which provides a way for the future development of green, non-toxic, harmless and wearable memory devices. Compared with other plants, garlic is not only edible but also used to treat related diseases, and at the same time, it has a good memristive effect when prepared into a memristive device. Generally speaking, the preparation method provided by the invention can effectively solve the pollution problem of current electronic products and reduce the manufacturing cost of electronic devices.

Description of drawings

Fig. 1 is the preparation method flow chart of the biomemristor based on garlic of the present invention;

Fig. 2 is the XRD spectrum of the garlic powder extracted in the embodiment of the present invention 1;

Fig. 3 is the memristive effect characterization diagram of the device prepared in Example 1 of the present invention at different pH values and the multi-turn data diagram of PH=7 with the best memristive effect;

Fig. 4 is a graph showing the ratio of high and low resistance states of the memristive device prepared in Example 1 of the present invention as a function of pH value;

Fig. 5 is a diagram showing the variation of the resistance state of the memristive device prepared in Example 1 of the present invention with the number of turns;

FIG. 6 is a graph showing the storage time performance of the memristive device prepared in Example 1 of the present invention.

Detailed ways

The present invention will be further described below in conjunction with accompanying drawing and specific embodiment:

Example 1

As shown in Figure 1, the flow chart of the preparation method of the garlic-based biomemristor provided by the present invention, for the convenience of understanding, in the flow chart and in this embodiment, silver is used as the upper electrode, and the two electrodes doped with fluorine Tin oxide transparent conductive glass (FTO) is a conductive substrate, which will be described in detail. A preparation method of a garlic-based biomemristor, comprising the following steps:

S1. Using garlic as raw material, collect plant garlic, clean the raw material with deionized water, put it in a container, cut it into thin garlic slices with a knife, dry the obtained garlic thin slices in an oven to constant weight, take out and dry The final garlic flakes are pulverized and ground, and then the powder is filtered with a 200-mesh filter screen with a pore size to obtain a plant powder with a substantially uniform particle size and a particle size of 0.5 to 2 μm for subsequent use;

S2. Add polyvinylidene fluoride (PVDF) powder to the plant powder obtained in step S1, mix evenly, the mass ratio of garlic powder to PVDF powder is 4:1, and dissolve the mixed powder in sodium perchlorate (NaClO ₄ ) electrolyte In the middle, make a colloid for later use;

S3, the tin dioxide transparent conductive glass (FTO) that adopts fluorine doping is conductive substrate, utilizes the spin-coating method that the colloid that step S2 obtains is spin-coated into thin film on FTO conductive surface as dielectric layer, will have dielectric layer The conductive substrate is placed in a drying oven at a temperature of 30°C, and the drying time is 36 hours;

S4: Divide the samples obtained in step S3 into 7 groups, and then quickly dip the 7 groups of samples in solutions with different pH values. The pH values of the solutions are 1, 3, 5, 7, 9, 11, and 13, respectively. There are 7 groups of samples with different pH values, and these 7 groups of samples are dried;

S5: Deposit upper electrode: after step S4, use magnetron sputtering vacuum deposition method to deposit metallic silver on the surface of the dielectric layer as the upper electrode, and obtain biomemory with different pH values and a structure of silver/garlic powder/FTO resistance device.

In this embodiment, 7 groups of experiments with pH values of 1, 3, 5, 7, 9, 11, and 13 are set up, the purpose of which is to compare the effects of pH values of 5-7. The inventor found through a lot of experiments that when the pH value is 5-7, the memristive effect of the memristor is significantly improved, especially the stability is improved. There is no special limitation on the acid-base solution used. In this embodiment, the acid solution is hydrochloric acid (HCl), and the alkaline solution is realized by adding sodium hydroxide (NaOH).

Fig. 2 is the X-ray diffraction (XRD) spectrum of the garlic powder extracted in the present embodiment, as can be seen from the figure, the main component of the extracted garlic powder is carbon.

Figure 3 is a characterization diagram of the memristive effect of the memristive device prepared in this embodiment. ^In the memristive performance test, the FTO conductive glass is directly used as the lower electrode, and is always grounded, and silver with an area of about 1mm is used as the upper electrode. The chemical workstation is used as a dual-purpose meter for current and voltage testing to form a test circuit for memristive performance testing. The results are as follows:

The voltage scanning range of the test circuit is -6.0V to 6.0V. It can be clearly seen from the figure that the prepared memristive device has a good memristive effect, and the device is also accompanied by a capacitive effect.

Fig. 4 is the change curve graph of the ratio of high and low resistance states of the memristive device prepared in this embodiment with the value of pH; as can be seen from Fig. 4, when the pH value is 5-7, the memristive device is relatively more stable, and the resistance ratio is also larger; when PH=7, the memristive device is the most stable, and the resistance ratio reaches the maximum.

Fig. 5 is a diagram showing the change of the resistance state of the memristive device prepared in this embodiment with the number of turns. It can be seen from Fig. 5 that the memristive device has good cycle stability, and there is almost no attenuation after more than 200 cycles.

Figure 6 is a characterization diagram of the storage time performance of the memristive device in this embodiment. Under the bias voltage of -1.025V, the resistance state changes with time. It can be seen from the figure that there is basically no attenuation after switching for 30,000 seconds. .

Those skilled in the art will appreciate that the embodiments described here are to help readers understand the principles of the present invention, and it should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the technical revelations disclosed in the present invention without departing from the essence of the present invention, and these modifications and combinations are still within the protection scope of the present invention.

Claims (9)

1. a preparation method based on garlic biomemristor, is characterized in that: comprise the steps: S1. Garlic powder with a particle size of 0.5-2 μm is prepared by using garlic as a raw material, and is set aside; S2. Mix garlic powder and polyvinylidene fluoride powder evenly in a mass ratio of 2 to 4:1, and then dissolve the mixed powder in sodium perchlorate electrolyte to prepare a colloid for use; S3, making the colloid obtained in step S2 into a thin film on the conductive surface of the conductive substrate as a dielectric layer, and drying the conductive substrate with the dielectric layer; S4, placing the conductive substrate with a dielectric layer in a solution with a pH value of 5 to 7, taking it out for a while, and then drying it; S5. After the treatment in step S4, the upper electrode is deposited on the surface of the dielectric layer to obtain a biomemristor having a top electrode/garlic powder/substrate structure. 2. The preparation method of garlic-based biomemristor according to claim 1, characterized in that: in the step S1, the specific step of obtaining garlic powder is: after washing the garlic with deionized water, making Thin slices of garlic are placed in a container and dried to constant weight, and then crushed, ground, and sieved to obtain garlic powder with a particle size of 0.5-2 μm. 3. The preparation method of garlic-based biomemristor according to claim 1, characterized in that: in the step S3, the drying treatment conditions are: in a drying oven at a temperature of 25-40°C, the drying time is 30 ~45 hours. 4. the preparation method of the biomemristor based on garlic according to claim 1, is characterized in that: in described step S3, utilize the spin-coating method that the colloid that step S2 obtains is spin-coated into a thin film on the conductive surface of the conductive substrate . 5. The method for preparing a garlic-based biomemristor according to any one of claims 1-4, characterized in that: in step S3, the thickness of the film is 15-35 μm. 6. The preparation method of garlic-based biomemristor according to any one of claims 1-4, characterized in that: in the step S5, the top electrode is deposited on the surface of the dielectric layer by magnetron sputtering vacuum deposition method . 7. The method for preparing a garlic-based biomemristor according to any one of claims 1-4, wherein the top electrode is one of silver, titanium, gold, aluminum or copper. 8. The method for preparing a garlic-based biomemristor according to any one of claims 1-4, characterized in that: the conductive substrate is a flat glass or quartz substrate with a conductive film. 9. the preparation method of the biomemristor based on garlic according to claim 8, is characterized in that: described conductive substrate is tin dioxide transparent conductive glass, copper flake, aluminum flake or titanium flake doped with fluorine kind of.