CN108807254B - Bearing device and reaction chamber - Google Patents
Bearing device and reaction chamber Download PDFInfo
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- CN108807254B CN108807254B CN201710307280.4A CN201710307280A CN108807254B CN 108807254 B CN108807254 B CN 108807254B CN 201710307280 A CN201710307280 A CN 201710307280A CN 108807254 B CN108807254 B CN 108807254B
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- 239000004020 conductor Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 11
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a bearing device, which is used for bearing a wafer, wherein a groove is arranged on a bearing surface of the bearing device; a vertical channel communicated with the groove is also arranged in the bearing device; a first conductive film is arranged at the edge position of the groove and is used for being in contact with the wafer; a first conductive body electrically connected with the first conductive film is arranged in the groove; and a second conductor is arranged in the vertical channel, the first conductor is connected with the second conductor, and the second conductor is used as an output end for detecting the voltage of the wafer. The invention also provides a reaction chamber with the bearing device. The invention can directly detect the wafer voltage, has high detection precision and is simple and easy to realize.
Description
Technical Field
The invention belongs to the technical field of microelectronic processing, and particularly relates to a bearing device and a reaction chamber.
Background
Currently, in plasma equipment, an Electrostatic Chuck (ESC) is usually used to replace an original mechanical Chuck to hold a wafer during a process. The ESC comprises a positive pole and a negative pole which are symmetrically arranged in the interlayer of the electrostatic chuck in a manner of being divided into two semicircles, wherein a large amount of positive charges are accumulated on the positive pole, so that a large amount of negative charges are accumulated on the part of the lower surface of the wafer close to the positive pole, and the generated coulomb force is the electrostatic force of the electrostatic chuck due to the opposite attraction of the charges; the same principle of the negative electrode is not described in detail.
In plasma equipment, the plasma is often acquired using radio frequency methods. This method, while successful in obtaining the plasma, can result in a certain voltage being developed across the wafer in the chamber, in which case an imbalance in the electrostatic forces at the wafer surface can result. At this time, the actual potential of the wafer surface needs to be measured to determine the value of the actual potential deviating from the zero point, so as to adjust the potentials of the positive and negative electrodes of the electrostatic chuck to obtain uniform electrostatic force.
Fig. 1 is a schematic diagram of prior art for measuring a surface potential of a wafer, and referring to fig. 1, an electrostatic chuck 10 is provided with two electrodes 101 and 102, the two electrodes 101 and 102 are connected to two terminals 11 and 12, the two terminals 11 and 12 are respectively connected to a radio frequency power supply through a capacitor, and are connected to a direct current power supply through a low pass filter; in addition, the two terminals 11 and 12 are connected to a detection circuit 13; the working principle of the detection circuit 13 is as shown in fig. 2, a signal (a radio frequency signal with bias information) on the terminal 11 corresponding to the electrode 101 is sequentially input into the signal acquisition circuit 14 and the peak detection circuit 15 to finally obtain a direct current signal; similarly, a signal (a radio frequency signal with bias information) at the terminal 12 corresponding to the electrode 102 is sequentially input to the signal acquisition circuit 16 and the peak detection circuit 17 to finally obtain a dc signal, the peak detection circuit 15 and the peak detection circuit 17 respectively detect the positive half cycle and the negative half cycle of the signal, and finally the signals output by the peak detection circuit 15 and the peak detection circuit 17 are added by the adder 18 to obtain the voltage of the wafer, which can be input to the dc power supply of the electrostatic chuck so as to adjust the potentials applied to the positive and negative electrodes of the electrostatic chuck.
However, the method for detecting the voltage of the wafer has the following problems in the practical application process: the method adopts an indirect mode to detect the voltage of the wafer, and has the advantages of low accuracy, high implementation difficulty, complex operation and poor intuition.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a bearing device and a reaction chamber, which can directly detect the voltage of a wafer, have high detection precision and are simple and easy to realize.
In order to solve one of the above problems, the present invention provides a carrying device for carrying a wafer, wherein a groove is disposed on a carrying surface of the carrying device; a vertical channel communicated with the groove is also arranged in the bearing device; a first conductive film is arranged at the edge position of the groove and is used for being in contact with the wafer; a first conductive body electrically connected with the first conductive film is arranged in the groove; and a second conductor is arranged in the vertical channel, the first conductor is connected with the second conductor, and the second conductor is used as an output end for detecting the voltage of the wafer.
Preferably, the vertical channel is arranged corresponding to the central position of the wafer; the number of the grooves is multiple, and the first conductive films and the first conductors are in one-to-one correspondence with the grooves; a plurality of the one end of slot all with vertical passageway links to each other, and the other end is along not equidirectional towards the outer edge extension setting of load bearing device.
Preferably, a plurality of the grooves are arranged at intervals and uniformly distributed along the circumferential direction of the vertical channel.
Preferably, the plurality of first conductive films are arranged at intervals in the same circumferential direction.
Preferably, the first conductive body is a second conductive film formed on a side wall and a bottom wall of the trench.
Preferably, the second conductor comprises a third conductive film and a conductive gas pipe which are positioned on the inner wall of the vertical channel and are overlapped from top to bottom, and the conductive gas pipe is used as an output end for detecting the voltage of the wafer.
Preferably, the first conductive film, the second conductive film and the third conductive film are formed by physical vapor deposition.
Preferably, the first conductive film includes two sub-conductive films, and the two sub-conductive films are respectively located at edge positions on two sides of the trench.
Preferably, an insulating spacer is further disposed between the first conductive film and the carrying surface of the carrying device.
Preferably, the first conductive film is provided at a partial position in the trench length direction.
Preferably, the vertical channel is also communicated with a gas source, so that gas provided by the gas source back blows the wafer through the vertical channel and the groove.
The invention also provides a reaction chamber, which comprises a bearing device, an air inlet device and a plasma generating device, wherein the bearing device is arranged in the reaction chamber and used for bearing the wafer, the air inlet device is used for conveying the process gas into the reaction chamber, the plasma generating device is used for exciting the gas in the reaction chamber to form plasma, and the bearing device adopts the bearing device provided by the invention.
The invention has the following beneficial effects:
in the invention, the first conductive film is contacted with the wafer, the first conductive film, the first conductor and the second conductor are electrically connected in sequence, the second conductor is farthest away from the wafer and is used as an output end for detecting the voltage of the wafer, namely, the second conductor can be connected with an electronic device to detect the voltage of the wafer.
Drawings
FIG. 1 is a schematic diagram illustrating a prior art method for measuring the surface potential of a wafer;
FIG. 2 is a schematic diagram of the detection circuit of FIG. 1;
FIG. 3 is a top view of a carrier according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view taken along line A-A of FIG. 3;
fig. 5 is a sectional view taken along line B-B of fig. 3.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, a carrier and a reaction chamber provided by the present invention are described in detail below with reference to the accompanying drawings.
Example 1
FIG. 3 is a top view of a carrier according to an embodiment of the present invention; FIG. 4 is a cross-sectional view taken along line A-A of FIG. 3; FIG. 5 is a cross-sectional view taken along line B-B of FIG. 3; referring to fig. 3 to 5, a carrying device according to an embodiment of the present invention is used for carrying a wafer, and a groove 20 is disposed on a carrying surface of the carrying device; a vertical channel 30 is also provided in the carrier means, communicating with the groove 20; a first conductive film 40 is arranged at the edge position of the groove 20, and the first conductive film 40 is used for contacting with the wafer; a first conductive body 50 electrically connected to the first conductive film 40 is provided in the trench 20; the vertical channel 30 is provided with a second conductor 60, the first conductor 50 is connected with the second conductor 60, and the second conductor 60 is used as an output end for detecting the wafer voltage.
As can be seen from fig. 3-5: the first conductive film 40 is in contact with the wafer, the first conductive film 40, the first conductive body 50 and the second conductive body 60 are electrically connected in sequence, and the second conductive body 60 is farthest from the wafer and serves as an output terminal for detecting the voltage of the wafer, that is, the second conductive body 60 may be connected to an electronic device to detect the voltage of the wafer.
As can be seen from the above, the embodiment of the present invention provides a structure capable of directly detecting the wafer voltage, which does not require excessive analysis by a potential measuring instrument, and directly reads out the potential on the second conductive body 60, so that the detection accuracy is high, and the implementation is simple and easy.
In addition, in the present embodiment, it is preferable that the vertical channel 30 is also communicated with a gas source, so that the gas provided by the gas source back-blows the wafer through the vertical channel 30 and the groove 20, and the heat exchange among the wafer, the bearing device and the gas can be realized by the gas, thereby realizing the temperature control of the wafer. It is understood that the potential of the wafer can be directly detected by improving the heat exchange structure in the present invention.
In this embodiment, preferably, the vertical channel 30 is disposed corresponding to the central position of the wafer on the carrier; the number of the grooves 20 is plural, and the first conductive films 40 and the first conductive bodies 50 are respectively in one-to-one correspondence with the grooves 20, as shown in fig. 3, the number of the grooves 20 is 6, and the number of the first conductive films 40 and the first conductive bodies 50 is also 5; one end of each of the plurality of channels 20 is connected to a vertical channel 30 and the other end extends in a different direction towards the outer edge of the carrier. In this manner, gas can be blown back along the grooves 20 toward the wafer in different directions, which is beneficial for improving the temperature uniformity of the wafer.
It is further preferable that the plurality of grooves 20 are spaced and uniformly distributed along the circumference of the vertical channel 30, and as shown in fig. 3, 6 grooves 20 are respectively arranged in a central symmetry of the vertical channel 30, so that the temperature uniformity of the substrate can be improved.
Still further preferably, as shown in fig. 5, the first conductive film 40 is disposed at an edge position of each trench 20, and a first conductive body 50 electrically connected to the first conductive film 40 is disposed in each trench 20; all the first conductive bodies 50 are connected to the second conductive body 60, that is, in the carrying device provided by the embodiment of the present invention, a plurality of first conductive films 40 and a plurality of first conductive bodies 50 are connected to the same second conductive body 60, so that the following advantages are present: firstly, because the first conductive body 50 is arranged in each groove 20, the cross sections of the air passages of the grooves are the same, namely the air flow resistance is uniform, and therefore, the temperature uniformity of the wafer is facilitated; secondly, the plurality of first conductive films 40 in different directions can be contacted with the wafer at a plurality of positions in different directions, that is, the voltages at the plurality of positions of the wafer are detected, and finally, the vector sum of the voltages at the plurality of positions can be obtained through the second conductive body 60, so that the voltage of the whole wafer can be better reflected, and the accuracy of the measured voltage is facilitated.
Still more preferably, as shown in fig. 3, the plurality of first conductive films 40 are disposed at intervals in the same circumferential direction, that is, the plurality of first conductive films 40 are disposed in a disconnected manner. Certainly, in practical applications, the plurality of first conductive films 40 may be sequentially connected in series to form an annular structure (i.e., a series connection manner), and in the case of adopting an off-connection manner as compared with the series connection manner, under the condition that the carrying device loads the radio frequency power source to generate the radio frequency bias voltage, the phenomenon that the first conductive films 40 sense the radio frequency signal may be effectively reduced, thereby facilitating improvement of the detection accuracy. In addition, the voltages at a plurality of positions on the same circumference of the wafer can be obtained by the plurality of first conductive films 40 which are uniformly distributed at intervals on the same circumference, and the voltage of the whole wafer can be further reflected based on the vector sums, so that the accuracy of the measured voltage is more favorable.
In the present embodiment, the first conductive body 50 is a second conductive film formed on the sidewall and the bottom wall of the trench 20.
In addition, in the present embodiment, preferably, the second conductive body 60 includes a third conductive film 601 and a conductive gas pipe 602 stacked from top to bottom in the vertical channel 30; the outer wall of the conductive gas pipe 602 is sleeved on the inner wall of the vertical channel 30, and the pipeline of the conductive gas pipe 602 is used as a gas flowing channel; the third conductive film 601 is located on the inner wall of the vertical channel 30 and connected to the upper end surface of the conductive gas pipe 602 and the second conductive body. It can be understood that with the second electrical conductor 60 of this structure, the reliability of the second electrical conductor 60 can be improved, and the manufacturing is facilitated.
Further preferably, the first conductive film 40, the second conductive film and the third conductive film 601 are formed by physical vapor deposition, and the preparation process is simple. Of course, the present invention is not limited to this, and in practical applications, the present invention may be formed in other manners, which are not listed here.
In addition, it is preferable that the first conductive film 40 includes two sub-conductive films 401 and 402, and the two sub-conductive films 401 and 402 are respectively located at the edge positions of both sides of the trench 20, as shown in fig. 3, so that the contact area of the first conductive film 40 with the wafer can be increased, and the first conductive film can be well conducted through the first conductive body 50.
It is also preferred that an insulating spacer 70 is further provided between the first conductive film 40 and the upper surface of the carrier, in which case the first conductive film 40 is electrically connected to the first electrical conductor 50 at the inner end of the insulating spacer 70, as shown in fig. 4; the inner end refers to an end facing the trench 20, as shown in fig. 3, for raising the first conductive film 40 so that the first conductive film 40 is well contacted with the wafer.
In this embodiment, the carrier device may be, but is not limited to, an electrostatic chuck, that is, a wafer is fixed by electrostatic adsorption.
In addition, the first conductive film 40 is disposed at a partial position in the longitudinal direction L of the trench 20 as shown in fig. 3, so that the influence on electrostatic adsorption and fixation can be reduced in the case where the carrying device is an electrostatic chuck.
Example 2
The invention further provides a reaction chamber, which comprises a bearing device, an air inlet device and a plasma generating device, wherein the bearing device is arranged in the reaction chamber and used for bearing the wafer, the air inlet device is used for conveying the process gas into the reaction chamber, the plasma generating device is used for exciting the gas in the reaction chamber to form plasma, and the bearing device comprises the bearing device provided by the embodiment 1.
According to the reaction chamber provided by the embodiment of the invention, because the bearing device provided by the embodiment is adopted, the voltage on the wafer is accurately detected based on the bearing device, and the process quality can be improved based on the voltage.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (12)
1. A bearing device is used for bearing a wafer, and is characterized in that,
a groove is arranged on the bearing surface of the bearing device;
a vertical channel communicated with the groove is also arranged in the bearing device;
a first conductive film is arranged at the edge position of the groove and is used for being in contact with the wafer;
a first conductive body electrically connected with the first conductive film is arranged in the groove;
and a second conductor is arranged in the vertical channel, the first conductor is connected with the second conductor, and the second conductor is used as an output end for detecting the voltage of the wafer.
2. The carrier as claimed in claim 1, wherein the vertical channel is disposed corresponding to a center position of the wafer;
the number of the grooves is multiple, and the first conductive films and the first conductors are in one-to-one correspondence with the grooves;
a plurality of the one end of slot all with vertical passageway links to each other, and the other end is along not equidirectional towards the outer edge extension setting of load bearing device.
3. The carrier in accordance with claim 2 wherein a plurality of said grooves are spaced circumferentially and evenly distributed along said vertical channel.
4. The carrier device according to claim 2, wherein the first conductive films are arranged at intervals in the same circumferential direction.
5. The carrier device according to claim 1, wherein the first conductive body is a second conductive film formed on the side wall and the bottom wall of the trench.
6. The carrier as claimed in claim 5, wherein the second conductive body includes a third conductive film and a conductive gas pipe stacked on the inner wall of the vertical channel from top to bottom, and the conductive gas pipe is used as an output terminal for detecting the voltage of the wafer.
7. The carrying device according to claim 6, wherein the first conductive film, the second conductive film and the third conductive film are formed by physical vapor deposition.
8. The carrier device according to claim 1, wherein the first conductive film comprises two sub-conductive films, and the two sub-conductive films are respectively located at edge positions on two sides of the trench.
9. The carrying device according to claim 1, wherein an insulating spacer is further disposed between the first conductive film and the carrying surface of the carrying device.
10. The carrier device according to claim 1, wherein the first conductive film is disposed at a local position in a length direction of the trench.
11. The carrier as claimed in claim 1 wherein the vertical channel is further in communication with a gas source such that gas provided by the gas source back-blows the wafer through the vertical channel and the trench.
12. A reaction chamber comprises a bearing device, a gas inlet device and a plasma generating device, wherein the bearing device is arranged in the reaction chamber and used for bearing a wafer, the gas inlet device is used for conveying process gas into the reaction chamber, and the plasma generating device is used for exciting the gas in the reaction chamber to form plasma, and the bearing device is characterized by adopting the bearing device as claimed in any one of claims 1 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710307280.4A CN108807254B (en) | 2017-05-04 | 2017-05-04 | Bearing device and reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710307280.4A CN108807254B (en) | 2017-05-04 | 2017-05-04 | Bearing device and reaction chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108807254A CN108807254A (en) | 2018-11-13 |
| CN108807254B true CN108807254B (en) | 2021-01-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710307280.4A Active CN108807254B (en) | 2017-05-04 | 2017-05-04 | Bearing device and reaction chamber |
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| Country | Link |
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| CN (1) | CN108807254B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240012341A1 (en) * | 2020-11-18 | 2024-01-11 | Asml Netherlands B.V. | Electrostatic clamp |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120234229A1 (en) * | 2011-03-16 | 2012-09-20 | Applied Materials, Inc. | Substrate support assembly for thin film deposition systems |
| JP5374375B2 (en) * | 2006-11-02 | 2013-12-25 | ユ−ジーン テクノロジー カンパニー．リミテッド | Chemical vapor deposition system for uniform heater temperature |
| CN104979259A (en) * | 2014-04-02 | 2015-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device and plasma processing equipment |
| CN106298615A (en) * | 2015-05-27 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck, reaction chamber and semiconductor processing equipment |
-
2017
- 2017-05-04 CN CN201710307280.4A patent/CN108807254B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5374375B2 (en) * | 2006-11-02 | 2013-12-25 | ユ−ジーン テクノロジー カンパニー．リミテッド | Chemical vapor deposition system for uniform heater temperature |
| US20120234229A1 (en) * | 2011-03-16 | 2012-09-20 | Applied Materials, Inc. | Substrate support assembly for thin film deposition systems |
| CN104979259A (en) * | 2014-04-02 | 2015-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device and plasma processing equipment |
| CN106298615A (en) * | 2015-05-27 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck, reaction chamber and semiconductor processing equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240012341A1 (en) * | 2020-11-18 | 2024-01-11 | Asml Netherlands B.V. | Electrostatic clamp |
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| Publication number | Publication date |
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| CN108807254A (en) | 2018-11-13 |
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