CN108807139A - The production method of growth of silicon oxide system, method and semi-conductor test structure - Google Patents
The production method of growth of silicon oxide system, method and semi-conductor test structure Download PDFInfo
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- CN108807139A CN108807139A CN201710312425.XA CN201710312425A CN108807139A CN 108807139 A CN108807139 A CN 108807139A CN 201710312425 A CN201710312425 A CN 201710312425A CN 108807139 A CN108807139 A CN 108807139A
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- reaction chamber
- oxygen
- silicon oxide
- growth
- under test
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The present invention provides a kind of growth of silicon oxide system, the production method of method and semi-conductor test structure, and the growth of silicon oxide system includes：Reaction chamber；Support base is located in the reaction chamber, is suitable for placing silicon slice under test；Supply air line, and is connected inside the reaction chamber, suitable for being passed through oxygen into the reaction chamber；Microwave generator is located at the top of the reaction chamber, is suitable for generating microwave, will be passed through the indoor oxygen polarization of the reaction chamber and be dissociated into oxygen plasma.The microwave that the growth of silicon oxide system of the present invention is generated by microwave generator will be passed through the indoor oxygen polarization of the reaction chamber and be dissociated into oxygen plasma, since oxygen plasma has very high activity, the rate reacted with silicon slice under test is very fast, can the silicon oxide layer of required thickness be grown on silicon slice under test surface in a relatively short period of time, substantially increase testing efficiency.
Description
Technical field
The invention belongs to technical field of semiconductors, are surveyed more particularly to a kind of growth of silicon oxide system, method and semiconductor
The production method for trying structure.
Background technology
Currently, measured using not damaged (non-destructive) mode there are mainly two types of the methods of epilayer resistance rate,
It is Air gap CV (ACV, air-gap capacitance voltage) and Air gap ac-SPV (AC-SPV, air gap surface photovoltage) respectively.
Wherein, ACV uses common capacitance voltage principle, it can be achieved that non-contact measurement, however, there are one this method tools
Larger disadvantage：During test, the spacing tested between probe and silicon slice under test is too small, general only 0.5 μm or so,
In this case, silicon slice under test is easy to collide test probe during fast moving, and silicon slice under test or test is caused to visit
The loss of needle.
And AC-SPV is a kind of means measuring epilayer resistance rate using surface photovoltage, test probe and silicon to be measured
Spacing between piece can reach 100 μm or more, be a kind of comparatively safe measurement method.The principle of AC-SPV is：When to be measured
When silicon chip surface is in anti-type state, depletion width is the function of resistance value.However, in order to keep the surface of p-type silicon slice under test anti-
Type is needed in silicon slice under test surface " spreading " a large amount of positive charges, meanwhile, charge stable is kept in measurement process.In order to keep
Charged surface is stablized, and needs to form one layer of dielectric substance on silicon slice under test surface, oxygen is carried out generally by by silicon slice under test
Change to form one layer of silicon oxide layer.In the prior art, ultraviolet light (UV)+bubbler (bubbler) vapor is generally used
Mode grows wet-oxygen oxidation silicon layer on silicon slice under test surface, and ultraviolet light and the oxygen reaction of 185nm can grow ozone and more
Elemental oxygen, the ultraviolet light and ozone reaction of 254nm can grow oxygen and more elemental oxygens, meanwhile, vapor can be by
The ultraviolet light degradation of 185nm generates OH- and H+；Specific reaction equation is as follows：
O2+185nmUV→O3+O
O3+254nmUV→O2+O
H2O+185nmUV→OH+H+
Wherein, elemental oxygen and OH- each contribute to improve the rate of the silicon slice under test surface oxidized silicon layer growth.However,
Even if in this way, the efficiency for growing wet-oxygen oxidation silicon layer by the way of UV Light is still very low, the oxidation of 5~10nm is grown
Silicon layer needs at least 25 minutes, this will necessarily seriously affect the handling capacity (throughput) of board, substantially reduce testing efficiency.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of growth of silicon oxide system, sides
The production method of method and semi-conductor test structure uses ultraviolet light (UV)+bubbler (bubbler) in the prior art for solving
The mode of vapor grows wet-oxygen oxidation silicon layer on silicon slice under test surface and existing silica layer growth is less efficient, to lead
The problem for causing testing efficiency low.
In order to achieve the above objects and other related objects, the present invention provides a kind of growth of silicon oxide system, the silica
Growing system includes：
Reaction chamber；
Support base is located in the reaction chamber, is suitable for placing silicon slice under test；
Supply air line, and is connected inside the reaction chamber, suitable for being passed through oxygen into the reaction chamber；
Microwave generator is located at the top of the reaction chamber, is suitable for generating microwave, it is indoor will to be passed through the reaction chamber
Oxygen polarization is dissociated into oxygen plasma.
A kind of preferred embodiment of growth of silicon oxide system as the present invention, the frequency of the microwave generator be 2GHz~
3GHz；The power of the microwave generator is 100W~1000W.
A kind of preferred embodiment of growth of silicon oxide system as the present invention, the background vacuum of the reaction chamber are
5Pa~10Pa.
A kind of preferred embodiment of growth of silicon oxide system as the present invention, the oxygen plasma includes O2 -, O- and
O2-。
A kind of preferred embodiment of growth of silicon oxide system as the present invention, the growth of silicon oxide system further include exhaust
It is connected inside pipeline, the gas exhaust piping and the reaction chamber, the gas discharge after being suitable for reacting.
The present invention also provides a kind of growing method of silica, the growing method of the silica includes the following steps：
1) silicon slice under test is provided；
2) silicon slice under test is placed in reaction chamber；
3) it is passed through oxygen into the reaction chamber, and opens microwave generator and generates microwave, the microwave is by the oxygen
Air exhaustion is dissociated into oxygen plasma, and the oxygen plasma is reacted with the silicon slice under test to be formed on the silicon slice under test surface
Silica.
As the present invention silica growing method a kind of preferred embodiment, further include between step 1) and step 2) to
Be passed through that oxygen pre-purged in the reaction chamber the step of.
A kind of preferred embodiment of the growing method of silica as the present invention, in step 2), the sheet of the reaction chamber
Bottom vacuum degree is 5Pa~10Pa.
A kind of preferred embodiment of the growing method of silica as the present invention, in step 3), first to the reaction chamber
It is inside passed through oxygen, then opens the microwave generator.
A kind of preferred embodiment of the growing method of silica as the present invention in step 3), first opens the microwave hair
Raw device, then it is passed through oxygen into the reaction chamber.
A kind of preferred embodiment of the growing method of silica as the present invention, in step 3), into the reflection chamber
While being passed through oxygen, the microwave generator is opened.
A kind of preferred embodiment of the growing method of silica as the present invention, in step 3), in the oxygen plasma
Including O2 -、O-And O2-。
A kind of preferred embodiment of the growing method of silica as the present invention, in step 3), the microwave generator
Frequency is 2GHz~3GHz；The power of the microwave generator is 100W~1000W.
The present invention also provides a kind of production method of semi-conductor test structure, the semi-conductor test structure is suitable for not damaged
The resistivity of epitaxial layer is measured, the production method of the semi-conductor test structure includes using as described in above-mentioned either a program
The growing method of silica is the growing silicon oxide layer of silicon slice under test surface the step of.
As described above, the present invention growth of silicon oxide system, the production method of method and semi-conductor test structure, have with
Lower advantageous effect：The microwave that the growth of silicon oxide system of the present invention is generated by microwave generator will be passed through in the reaction chamber
Oxygen polarization be dissociated into oxygen plasma, due to oxygen plasma have very high activity, the speed reacted with silicon slice under test
Rate is very fast, can grow the silicon oxide layer of required thickness on silicon slice under test surface in a relatively short period of time, substantially increase survey
Try efficiency.
Description of the drawings
Fig. 1 is shown as the structural schematic diagram of the growth of silicon oxide system provided in the embodiment of the present invention one.
Fig. 2 is shown as the flow chart of the growth of silicon oxide method provided in the embodiment of the present invention two.
Component label instructions
1 reaction chamber
2 support bases
3 silicon slices under test
4 supply air lines
5 microwave generators
6 gas exhaust pipings
7 oxygen plasmas
8 microwaves
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Fig. 2.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present invention provides a kind of growth of silicon oxide system, the growth of silicon oxide system includes：Reaction chamber
Room 1；Support base 2, the support base 2 are located in the reaction chamber 1, are suitable for placing silicon slice under test 3；Supply air line 4, institute
It states and is connected inside supply air line 4 and the reaction chamber 1, the supply air line 4 is suitable for being passed through oxygen into the reaction chamber 1
Gas；Microwave generator 5, the microwave generator 5 are located at 1 top of the reaction chamber, are suitable for generating microwave 8, will be passed through institute
It states the polarization of the oxygen in reaction chamber 1 and is dissociated into oxygen plasma 7.The growth of silicon oxide system of the present invention is sent out by the microwave
The oxygen being passed through in the reaction chamber 1 polarization is dissociated into oxygen plasma 7 by the microwave 8 that raw device 5 generates, due to oxygen plasma
Body 7 has very high activity, and the rate that the oxygen plasma 7 is reacted with the silicon slice under test 3 is very fast, can be shorter
Time in 3 surface of silicon slice under test grow required thickness silicon oxide layer, 1nm~10nm thickness can be grown in 5 minutes
Primary silicon oxide layer, substantially increases testing efficiency.
As an example, the support base 2 can be electrostatic chuck, or vacuum cup, it is preferable that the present embodiment
In, the support base 2 is vacuum cup.
As an example, the frequency of the microwave generator 5 can be set according to actual needs, it is preferable that described micro-
The frequency of wave producer 5 is 2GHz~3GHz, it is further preferable that in the present embodiment, the frequency of the microwave generator 5 is
2.4GHz；The power of the microwave generator 5 can be set according to actual needs, it is preferable that described micro- in the present embodiment
The power of wave producer 5 is 100W~1000W.
As an example, the background vacuum of the reaction chamber 1 can be but be not limited only to 5Pa~10Pa.
As an example, the oxygen plasma 7 generated under the action of the microwave 8 includes O2 -, O- and O2-。
As an example, the growth of silicon oxide system further includes gas exhaust piping 6, the gas exhaust piping 6 and the reaction chamber
It is connected inside room 1, the gas discharge after being suitable for reacting.
Embodiment two
Referring to Fig. 2, the present invention also provides a kind of growing method of silica, the growing method of the silica is based in fact
It applies the growth of silicon oxide system described in example one to implement, the growing method of the silica includes the following steps：
1) silicon slice under test is provided；
2) silicon slice under test is placed in reaction chamber；
3) it is passed through oxygen into the reaction chamber, and opens microwave generator and generates microwave, the microwave is by the oxygen
Air exhaustion is dissociated into oxygen plasma, and the oxygen plasma is reacted with the silicon slice under test to be formed on the silicon slice under test surface
Silica.
In step 1), the S1 steps in Fig. 2 are please referred to, silicon slice under test is provided.
Further include leading into the reaction chamber as an example, before the silicon slice under test is placed in reaction chamber
Enter that oxygen pre-purged the step of, the indoor residual gas of the reaction chamber or impurity can be discharged as possible in this way, with
Exempt to cause harmful effect to subsequent technique.
In step 2), the S2 steps in Fig. 2 are please referred to, the silicon slice under test is placed in reaction chamber.
As an example, as described in embodiment one, support base is provided in the reaction chamber, the support base is excellent
It is selected as vacuum cup；The silicon slice under test, which is placed in the reaction chamber, is actually placed in the indoor vacuum suction of the reaction chamber
On disk, and adsorbed by the vacuum cup.
As an example, the background vacuum of the reaction chamber is 5Pa~10Pa.
In step 3), the S3 steps in Fig. 2 are please referred to, oxygen is passed through into the reaction chamber, and opens microwave hair
Raw device generates microwave, and oxygen polarization is dissociated into oxygen plasma, the oxygen plasma and the silicon to be measured by the microwave
Piece reaction on the silicon slice under test surface to form silica.
In one example, it can first be passed through oxygen into the reaction chamber, then open the microwave generator.
In another example, the microwave generator can be first opened, then oxygen is passed through into the reaction chamber.
In another example, while being also passed through oxygen into the reflection chamber, the microwave generator is opened.
As an example, the oxygen plasma includes O2 -, O- and O2-。
As an example, the frequency of the microwave generator is 2GHz~3GHz, it is preferable that in the present embodiment, the microwave
The frequency of generator is 2.4GHz；The power of the microwave generator is 100W~1000W.
Embodiment three
The present invention also provides a kind of production method of semi-conductor test structure, the semi-conductor test structure is suitable for not damaged
The resistivity of epitaxial layer is measured, the production method of the semi-conductor test structure includes using the oxidation as described in embodiment two
The growing method of silicon is the growing silicon oxide layer of silicon slice under test surface the step of.Using the life of the silica as described in embodiment two
Long method please refers to embodiment two in the specific method of silicon slice under test surface growing silicon oxide layer, is not repeated herein.
In conclusion the present invention provides a kind of growth of silicon oxide system, the production method of method and semi-conductor test structure,
The growth of silicon oxide system includes：Reaction chamber；Support base is located in the reaction chamber, is suitable for placing silicon slice under test；
Supply air line, and is connected inside the reaction chamber, suitable for being passed through oxygen into the reaction chamber；Microwave generator, position
At the top of the reaction chamber, be suitable for generating microwave, will be passed through the indoor oxygen polarization of the reaction chamber be dissociated into oxygen etc. from
Daughter.The microwave that the growth of silicon oxide system of the present invention is generated by microwave generator will be passed through the indoor oxygen of the reaction chamber
Polarization is dissociated into oxygen plasma, and since oxygen plasma has very high activity, the rate reacted with silicon slice under test is very
Soon, can the silicon oxide layer of required thickness be grown on silicon slice under test surface in a relatively short period of time, substantially increases testing efficiency.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (14)
1. a kind of growth of silicon oxide system, which is characterized in that the growth of silicon oxide system includes：
Reaction chamber；
Support base is located in the reaction chamber, is suitable for placing silicon slice under test；
Supply air line, and is connected inside the reaction chamber, suitable for being passed through oxygen into the reaction chamber；
Microwave generator is located at the top of the reaction chamber, is suitable for generating microwave, will be passed through the indoor oxygen of the reaction chamber
Polarization is dissociated into oxygen plasma.
2. growth of silicon oxide system according to claim 1, it is characterised in that：The frequency of the microwave generator is 2GHz
~3GHz；The power of the microwave generator is 100W~1000W.
3. growth of silicon oxide system according to claim 1, it is characterised in that：The background vacuum of the reaction chamber is
5Pa~10Pa.
4. growth of silicon oxide system according to claim 1, it is characterised in that：The oxygen plasma includes O2 -、O-
And O2-。
5. growth of silicon oxide system according to any one of claim 1 to 4, it is characterised in that：The growth of silicon oxide
System further includes gas exhaust piping, is connected inside the gas exhaust piping and the reaction chamber, the gas discharge after being suitable for reacting.
6. a kind of growing method of silica, which is characterized in that the growing method of the silica includes the following steps：
1) silicon slice under test is provided；
2) silicon slice under test is placed in reaction chamber；
3) it is passed through oxygen into the reaction chamber, and opens microwave generator and generates microwave, the microwave is by the oxygen pole
Change is dissociated into oxygen plasma, and the oxygen plasma is reacted with the silicon slice under test to be aoxidized with being formed on the silicon slice under test surface
Silicon.
7. the growing method of silica according to claim 6, it is characterised in that：Further include between step 1) and step 2)
Be passed through that oxygen pre-purged into the reaction chamber the step of.
8. according to the growing method of the silica described in claim 6, it is characterised in that：In step 2), the reaction chamber
Background vacuum be 5Pa~10Pa.
9. the growing method of silica according to claim 6, it is characterised in that：In step 3), first to the reaction chamber
Interior is passed through oxygen, then opens the microwave generator.
10. the growing method of silica according to claim 6, it is characterised in that：In step 3), the microwave is first opened
Generator, then it is passed through oxygen into the reaction chamber.
11. the growing method of silica according to claim 6, it is characterised in that：In step 3), to the reflection chamber
While being inside passed through oxygen, the microwave generator is opened.
12. the growing method of silica according to claim 6, it is characterised in that：In step 3), the oxygen plasma
Include O2 -、O-And O2-。
13. the growing method of the silica according to any one of claim 6 to 12, it is characterised in that：In step 3), institute
The frequency for stating microwave generator is 2GHz~3GHz；The power of the microwave generator is 100W~1000W.
14. a kind of production method of semi-conductor test structure, the semi-conductor test structure is suitable for noninvasive measurement epitaxial layer
Resistivity, which is characterized in that the production method of the semi-conductor test structure includes using such as any one of claim 6 to 13
The growing method of the silica is the growing silicon oxide layer of silicon slice under test surface the step of.
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| CN201710312425.XA CN108807139A (en) | 2017-05-05 | 2017-05-05 | The production method of growth of silicon oxide system, method and semi-conductor test structure |
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| CN201710312425.XA CN108807139A (en) | 2017-05-05 | 2017-05-05 | The production method of growth of silicon oxide system, method and semi-conductor test structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485891A (en) * | 2002-08-30 | 2004-03-31 | ��ʿͨAmd�뵼������˾ | Semiconductor memory device and method for manufacturing semiconductor device |
| CN101151721A (en) * | 2005-03-30 | 2008-03-26 | 东京毅力科创株式会社 | Manufacturing method of insulating film and manufacturing method of semiconductor device |
| US20100197052A1 (en) * | 2009-02-05 | 2010-08-05 | Commissariat A L'energie Atomique | Ion implantation process characterization method |
-
2017
- 2017-05-05 CN CN201710312425.XA patent/CN108807139A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485891A (en) * | 2002-08-30 | 2004-03-31 | ��ʿͨAmd�뵼������˾ | Semiconductor memory device and method for manufacturing semiconductor device |
| CN101151721A (en) * | 2005-03-30 | 2008-03-26 | 东京毅力科创株式会社 | Manufacturing method of insulating film and manufacturing method of semiconductor device |
| US20100197052A1 (en) * | 2009-02-05 | 2010-08-05 | Commissariat A L'energie Atomique | Ion implantation process characterization method |
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