CN108801492A - The temperature sensor of high reliability - Google Patents
The temperature sensor of high reliability Download PDFInfo
- Publication number
- CN108801492A CN108801492A CN201810658515.9A CN201810658515A CN108801492A CN 108801492 A CN108801492 A CN 108801492A CN 201810658515 A CN201810658515 A CN 201810658515A CN 108801492 A CN108801492 A CN 108801492A
- Authority
- CN
- China
- Prior art keywords
- temperature sensor
- weight
- high reliability
- thermistor
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910009818 Ti3AlC2 Inorganic materials 0.000 claims description 8
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 7
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 abstract description 10
- 238000005452 bending Methods 0.000 abstract description 4
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Thermistors And Varistors (AREA)
Abstract
This case is related to a kind of temperature sensor of high reliability, including：Insulating properties film；Thin-film thermistor portion is formed in the surface of insulating properties film with thermistor material；A pair of electrodes is formed on insulating properties film and is connected to thin-film thermistor portion；Thermistor material is made of the material of following parts by weight：Ta3AlC250 parts by weight；V3AlC220~22 parts by weight；12~14 parts by weight of manganese oxide；3~5 parts by weight of platinum.The present invention in the thermo-sensitive material to temperature sensor by being improved, and with good B constants and heat resistance, temperature sensor bending strength of the invention is high, is not likely to produce crackle, has high-fire resistance and reliability.
Description
Technical field
The present invention relates to temperature sensor element more particularly to a kind of temperature sensors of high reliability.
Background technology
Temperature as information equipment, communication equipment, medical equipment, residential equipment instrument, automobile transmission device etc. passes
, there is the sintered body including the oxide semiconductor with larger negative temperature coefficient in sensor (also including flow sensor)
Thermistor.Resistance characteristic changes greatly existing thermistor in a high temperauture environment, and heat resistance is relatively low, poor reliability.
Invention content
For the technical problems in the prior art, this case provides a kind of temperature sensor, with excellent heat-resisting
Property and high reliability.
To achieve the above object, this case is achieved through the following technical solutions：
A kind of temperature sensor of high reliability, wherein including：
Insulating properties film；
Thin-film thermistor portion is formed in the surface of the insulating properties film with thermistor material；
A pair of electrodes is formed on the insulating properties film and is connected to the thin-film thermistor portion；
Wherein, thermistor material is made of the material of following parts by weight：
Preferably, the temperature sensor of the high reliability, wherein the thermistor material further includes 2~4 weights
Measure part Ti4SiC3。
Preferably, the temperature sensor of the high reliability, wherein the thermistor material further includes 1~3 weight
Measure part Cu-Ti3AlC2。
Preferably, the temperature sensor of the high reliability, wherein the thermistor material further includes 1~3 weight
Measure part tungsten oxide.
Preferably, the temperature sensor of the high reliability, wherein the thermistor material further includes 1~3 weight
Measure part cobalt oxide.
Preferably, the temperature sensor of the high reliability, wherein the thermistor material further includes 1~3 weight
Measure part zinc oxide.
Preferably, the temperature sensor of the high reliability, wherein the Ta3AlC2、V3AlC2, manganese oxide, platinum,
Ti4SiC3、Cu-Ti3AlC2, tungsten oxide, cobalt oxide and zinc oxide grain size be 30~50nm.
The beneficial effects of the invention are as follows：
(1) present invention is in the thermo-sensitive material to temperature sensor by being improved, and makes it have good B constants and resistance to
Hot, temperature sensor bending strength of the invention is high, is not likely to produce crackle, has high-fire resistance and reliability.
(2)Ta3AlC2As the main body of thermistor material, have the advantages that constant B values are high；By the way that V is added3AlC2
Improve the thermal stability of thermistor material；Its corrosion resistance is improved by the way that manganese oxide is added；Temperature-sensitive is improved by the way that platinum is added
The bending strength of resistance material；Ti4SiC3And Cu-Ti3AlC2Collaboration improves the impact strength and hardness of thermistor material；
Its thermal stability and high temperature resistance are improved by the way that tungsten oxide is added；Its flexibility is improved by the way that cobalt oxide is added；By adding
Enter zinc oxide and improves its thermal stability.
Specific implementation mode
With reference to embodiment, the present invention is described in further detail, to enable those skilled in the art with reference to specification
Word can be implemented according to this.
The present invention provides a kind of, high reliability temperature sensor, including：
Insulating properties film；
Thin-film thermistor portion is formed in the surface of insulating properties film with thermistor material；
A pair of electrodes is formed on insulating properties film and is connected to thin-film thermistor portion；
Wherein, thermistor material is made of the material of following parts by weight：
Ta3AlC2As the main body of thermistor material, have the advantages that constant B values are high；By the way that V is added3AlC2It improves
The thermal stability of thermistor material；Its corrosion resistance is improved by the way that manganese oxide is added；Thermistor is improved by the way that platinum is added
The bending strength of material.
As the another embodiment of this case, wherein thermistor material further includes 2~4 parts by weight Ti4SiC3。
As the another embodiment of this case, wherein thermistor material further includes 1~3 parts by weight Cu-Ti3AlC2。Ti4SiC3
And Cu-Ti3AlC2Collaboration improves the impact strength and hardness of thermistor material.
As the another embodiment of this case, wherein thermistor material further includes 1~3 parts by weight tungsten oxide.By the way that oxygen is added
Change tungsten and improves its thermal stability and high temperature resistance.
As the another embodiment of this case, wherein thermistor material further includes 1~3 parts by weight cobalt oxide.By the way that oxygen is added
Change cobalt and improves its flexibility.
As the another embodiment of this case, wherein thermistor material further includes 1~3 part by weight of zinc oxide.By the way that oxygen is added
Change zinc and improves its thermal stability.
As the another embodiment of this case, wherein Ta3AlC2、V3AlC2, manganese oxide, platinum, Ti4SiC3、Cu-Ti3AlC2, oxidation
The grain size of tungsten, cobalt oxide and zinc oxide is 30~50nm.
Some specific embodiments and comparative example and the performance test results are listed below：
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details.
Claims (7)
1. a kind of temperature sensor of high reliability, which is characterized in that including：
Insulating properties film；
Thin-film thermistor portion is formed in the surface of the insulating properties film with thermistor material；
A pair of electrodes is formed on the insulating properties film and is connected to the thin-film thermistor portion；
Wherein, thermistor material is made of the material of following parts by weight：
2. the temperature sensor of high reliability as described in claim 1, which is characterized in that the thermistor material further includes
2~4 parts by weight Ti4SiC3。
3. the temperature sensor of high reliability as claimed in claim 2, which is characterized in that the thermistor material further includes
1~3 parts by weight Cu-Ti3AlC2。
4. the temperature sensor of high reliability as claimed in claim 3, which is characterized in that the thermistor material further includes
1~3 parts by weight tungsten oxide.
5. the temperature sensor of high reliability as claimed in claim 4, which is characterized in that the thermistor material further includes
1~3 parts by weight cobalt oxide.
6. the temperature sensor of high reliability as claimed in claim 5, which is characterized in that the thermistor material further includes
1~3 part by weight of zinc oxide.
7. the temperature sensor of high reliability as claimed in claim 6, which is characterized in that the Ta3AlC2、V3AlC2, oxidation
Manganese, platinum, Ti4SiC3、Cu-Ti3AlC2, tungsten oxide, cobalt oxide and zinc oxide grain size be 30~50nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810658515.9A CN108801492A (en) | 2018-06-25 | 2018-06-25 | The temperature sensor of high reliability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810658515.9A CN108801492A (en) | 2018-06-25 | 2018-06-25 | The temperature sensor of high reliability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108801492A true CN108801492A (en) | 2018-11-13 |
Family
ID=64084817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810658515.9A Pending CN108801492A (en) | 2018-06-25 | 2018-06-25 | The temperature sensor of high reliability |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108801492A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101024575A (en) * | 2006-02-17 | 2007-08-29 | 中国科学院金属研究所 | Method for preparing tantalum-aluminium-carbon ceramic by in-situ heat-pressing/solid-liquid phase reaction |
| CN102607732A (en) * | 2012-03-20 | 2012-07-25 | 哈尔滨工程大学 | Preparation method of film temperature sensor for liquid floated gyroscope |
| JP2017134024A (en) * | 2016-01-29 | 2017-08-03 | 三菱マテリアル株式会社 | Temperature sensor |
| CN107043252A (en) * | 2016-02-08 | 2017-08-15 | Tdk株式会社 | Semiconductor ceramic composition and ptc thermistor |
| JP2018036245A (en) * | 2016-08-29 | 2018-03-08 | 三菱マテリアル株式会社 | Temperature sensor and method for producing the same |
-
2018
- 2018-06-25 CN CN201810658515.9A patent/CN108801492A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101024575A (en) * | 2006-02-17 | 2007-08-29 | 中国科学院金属研究所 | Method for preparing tantalum-aluminium-carbon ceramic by in-situ heat-pressing/solid-liquid phase reaction |
| CN102607732A (en) * | 2012-03-20 | 2012-07-25 | 哈尔滨工程大学 | Preparation method of film temperature sensor for liquid floated gyroscope |
| JP2017134024A (en) * | 2016-01-29 | 2017-08-03 | 三菱マテリアル株式会社 | Temperature sensor |
| CN107043252A (en) * | 2016-02-08 | 2017-08-15 | Tdk株式会社 | Semiconductor ceramic composition and ptc thermistor |
| JP2018036245A (en) * | 2016-08-29 | 2018-03-08 | 三菱マテリアル株式会社 | Temperature sensor and method for producing the same |
Non-Patent Citations (1)
| Title |
|---|
| 郑丽雅 等: "《MAX相陶瓷的制备、结构、性能及发展趋势》", 《宇航材料工艺》 * |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181113 |
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| RJ01 | Rejection of invention patent application after publication |