CN108767445B - Reconfigurable multifunctional antenna based on distributed direct drive array - Google Patents
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Classifications
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- H—ELECTRICITY
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- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
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- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention mainly belongs to the technical field of antennas, relates to a fast-changing multifunctional plane and quasi-three-dimensional antenna, and particularly relates to a reconfigurable multifunctional antenna. The multifunctional antenna is formed by integrating the semiconductor plasma and the distributed direct drive array based on the rapid, high-current and simple Thin Film Transistor (TFT) matrix drive technology on silicon, glass, sapphire, silicon carbide and other plane or curved medium substrates, and can rapidly and dynamically control the shape, size and correct position of each radiating unit forming the plane array, so as to realize the reconfigurability of antenna frequency, the reconfigurability of polarization, the reconfigurability of beam control and gain agility, the position of side lobes and the reconfigurability of relative levels thereof and various combinations of the above, and the rapid changing of the antenna changes from one function to another function, so that one plane or quasi-three-dimensional antenna is changed into a multifunctional plane or quasi-three-dimensional antenna.
Description
Technical Field
The invention mainly belongs to the technical field of antennas, relates to a fast-changing multifunctional antenna, and particularly relates to a reconfigurable multifunctional antenna based on a distributed direct-driven array.
Background
In the last decades, reconfigurable multifunctional antennas have become a popular field of research in the industry, and the increasing requirements of civilian and military for new wireless communication technologies and radar technologies have also prompted the rapid development of this field of research. Different kinds of reconfigurable technologies and implementation approaches have been studied and proven to be effective by practice.
There are tens of kinds of antennas, each antenna has its own unique functions and application fields, and if the functions of the tens of thousands of kinds of antennas are integrated on one antenna, the antenna becomes a universal antenna. Parameters characterizing the antenna electrical performance are operating frequency, polarization, gain, main beam pointing, radiation pattern, position and relative level of side lobes, etc., and thus, reconfigurable includes frequency reconfigurability (multi-band operation), polarization reconfigurability (linear polarization, circular polarization, elliptical polarization), beam steering and gain agility reconfigurability (beam scanning), side lobe position and relative level reconfigurability (anti-interference) and various combinations of the above.
The antenna reconfigurable method is also varied and a method of thinning it by a control algorithm using a dense array is useful. For example, the liquid crystal metamaterial antenna of company kymeta in the united states, while this approach can achieve scanning of the main beam and reconfigurability of the polarization, its redundant element count is too high, only a part of the radiating elements are used at a time, and even then the phases of the radiating elements used are not precisely controlled, rendering such an antenna inefficient and switching times of several milliseconds, which is unacceptable in some applications. In addition, microwave PIN diodes, gallium arsenide transistors, varactors, and MEMS are also useful as switching devices to reconfigure the antenna, but such reconfigurability and functionality are limited, particularly if the diodes are nonlinear elements, which can produce some intermodulation. In addition, there is also a mechanical method of changing the antenna shape to change the antenna radiation pattern, but this method increases the space occupied by the antenna and the antenna becomes too heavy.
The research of the transverse PIN solid-state plasma reconfigurable antenna is carried out by the units of the university of south Kai, the university of Nanjing aerospace and the university of Western-style electronic technology, but the solution based on the silicon medium substrate has high cost in process implementation, and the size of the antenna is limited by the capability of a semiconductor production line and the manufacturing process of a silicon chip; meanwhile, the above solution does not propose an innovative technical solution for independently driving a single plasma. For example, in a "programmable control reconfigurable antenna based on grid-shaped transverse PIN diode" of the south-open university, only a group of (at least 4, 2×2) plasmas can be used as basic units for antenna design and driving, all plasma units need independent power lines to be directly driven by a common programmable voltage source, but a specific feasible process implementation scheme is not provided, when the number of plasma units needing driving is large, the driving circuit design of the invention is quite complex, the requirement on devices is higher, and the difficulty and cost of process implementation are higher; meanwhile, two adjacent silicon-based plasma units in each row or each column in the design have a common P injection region or N injection region, and an isolation groove is not arranged between the two adjacent plasma units, so that if the two adjacent plasma units work simultaneously, the two adjacent plasma units are mutually interfered, and the characteristics of the plasma units are reduced, and therefore, the performance, the reconfigurable precision and the flexibility of the antenna design are limited to a certain extent.
In summary, there are many methods for reconstructing an antenna, but the purpose is to make the antenna multifunctional, so that one antenna can realize the functions of multiple antennas, and space of the antenna is saved.
Disclosure of Invention
In view of the above, the present invention provides a fast reconfigurable multifunctional antenna. The multifunctional antenna is formed by integrating the semiconductor plasma and the distributed direct drive array based on the rapid, high-current and simple Thin Film Transistor (TFT) matrix drive technology on silicon, glass, sapphire, silicon carbide and other plane or curved medium substrates, and can rapidly and dynamically control the shape, size and correct position of each radiating unit forming the plane array, so as to realize the reconfigurability of antenna frequency, the reconfigurability of polarization, the reconfigurability of beam control and gain agility, the position of side lobes and the reconfigurability of relative levels thereof and various combinations of the above, and the rapid changing of the antenna changes from one function to another function, so that one plane or quasi-three-dimensional antenna is changed into a multifunctional plane or quasi-three-dimensional antenna.
A first object of the present invention is to construct various planar and non-planar antennas (such as quasi-three-dimensional multifunctional antennas) by controlling a basic unit of a semiconductor plasma basic unit through a distributed direct drive array circuit, so that the constructed and obtained antennas can realize various functions, and the reconstructed multifunctional antennas can realize the reconstruction of antenna frequency, the reconstruction of polarization, the reconstruction of beam control and gain agility, the reconstruction of the position of side lobes and the relative level thereof, and various combinations thereof.
Meanwhile, in engineering application, switching between various functions is time-consuming, and the shorter the switching time is, the better; another object of the invention is to use a semiconductor plasma as the basic unit, to make it a conductor or an insulator (medium), and to minimize the switching time from one function to the other (1-30 mus) and to maximize the accuracy of the antenna formed by this basic unit (typically 50 microns, i.e. 0.05 mm), using the drive time and drive accuracy of a distributed direct drive array, including TFT matrix drive technology. Such accuracy is sufficient for antennas in the millimeter wave, sub-millimeter wave or even the far infrared band.
The invention is realized by the following technical scheme:
The reconfigurable multifunctional antenna takes semiconductor plasmas as basic units, comprises a distributed direct-drive array circuit, and controls the working state or the non-working state of each semiconductor plasma basic unit through the distributed direct-drive array circuit, so as to dynamically form a radiation area or a non-radiation area of the antenna in real time, and further control the frequency, polarization, beam control, gain, side lobe position and relative level of the antenna; the working state is a plasma state, and the non-working state is a non-plasma state; the distributed direct drive array circuit is based on a Thin Film Transistor (TFT) matrix drive technology, and has short switching time, large drive current and simple drive mode.
Further, the distributed direct drive array circuit is used for independently providing direct drive voltage which is more than or equal to 0.5V and drive current which is 0.1-30 mA for each semiconductor plasma basic unit, the switching time is 1-30 mu s, and the driving mode is simple matrix driving for all the semiconductor plasma basic units forming the metal conductive area.
Further, the semiconductor plasma basic unit and the distributed direct drive array circuit are manufactured by integrating the semiconductor process on the same dielectric substrate; in the multifunctional antenna, the semiconductor plasma basic unit and the distributed direct drive array circuit are positioned on the same surface of the antenna dielectric substrate to form a single-layer structure.
Further, the dielectric substrate adopts silicon, glass, sapphire or silicon carbide as a matrix material, and is a plane or a curved surface.
Further, the SPIN junction in the semiconductor plasma base unit is made of silicon or a metal oxide semiconductor material.
Further, the metal oxide semiconductor material is any one of tin dioxide (SnO 2), titanium dioxide (TiO 2) and zinc oxide (ZnO); or (b)
The metal oxide semiconductor material is formed by taking tin dioxide (SnO 2), titanium dioxide (TiO 2) or zinc oxide (ZnO) as a matrix and doping one or two elements of indium and gallium; preferably, the metal oxide semiconductor material is Indium Zinc Oxide (IZO) or Indium Gallium Zinc Oxide (IGZO).
Further, the reconfigurable multifunctional antenna is a planar multifunctional antenna or a quasi-three-dimensional multifunctional antenna.
Further, the reconfigurable multifunctional antenna is any one of a corner reflector antenna, a logarithmic spiral antenna, a phased array antenna using a transmission type frequency selective surface FSS as a phase shifter, or a blade type parting antenna.
Further, the reconfigurable multifunctional antenna can realize any one or any two or more of the reconfigurability of antenna frequency, the reconfigurability of polarization, the reconfigurability of beam control and gain agility, side lobes and the reconfigurability of relative level thereof.
The beneficial technical effects of the invention are as follows:
The reconfigurable multifunctional antenna array based on the distributed direct drive array provided by the invention can realize multiple antenna functions on one antenna device, has short switching time required by changing from one function to another, can reach microsecond magnitude, can very simply change the shape, size and position of an antenna radiating element of the array and effectively control the shape, size and position of the radiating element, and realizes the reconfigurability of antenna frequency (multi-frequency band operation), reconfigurability of polarization (linear polarization and circular polarization), reconfigurability of beam control and gain agility (beam scanning), the reconfigurability of side lobe positions and relative levels thereof (anti-interference) and various combinations of the above, and has high antenna efficiency and accurate beam pointing.
The reconfigurable multifunctional antenna array based on the distributed direct drive array provided by the invention takes the semiconductor plasma controlled by direct voltage as the basic unit of the agile universal antenna unit, and various antennas can be formed by using the basic unit. The semiconductor plasma has a length dimension of 50-200 micrometers, the dimension is equivalent to the pixel dimension in a liquid crystal television display screen, a Thin Film Transistor (TFT) matrix driving technology is utilized to drive a semiconductor plasma basic unit, the semiconductor plasma basic unit and a distributed direct driving array based on a rapid, high-current and simple TFT matrix driving technology are perfectly combined together, and based on a similar technology, integrated design can be carried out, manufacturing is completed on the same production line, and the multifunctional antenna can integrate the semiconductor plasma and the distributed direct driving array based on the TFT matrix driving technology on silicon, glass, sapphire and silicon carbide and other plane or curved medium substrates through a TFT panel technology or a semiconductor technology, so that various array antennas are constructed, and a reconfigurable multifunctional antenna array based on the distributed direct driving array is realized.
The semiconductor plasma antenna has the advantages that the basic unit of the semiconductor plasma is driven by the distributed direct driving array based on the rapid, high-current and simple technology including the TFT matrix driving technology, the technical problem that the conventional semiconductor plasma antenna is designed to adopt direct wiring or through holes in a dielectric plate to be connected with a driving circuit is successfully solved, and a plurality of control switch circuits can be driven by the same shift register in a row-column matrix driving mode, so that the complexity of the driving circuit is greatly simplified, more semiconductor plasma units can be driven, and the manufacture of the semiconductor plasma antenna with large size can be realized. Meanwhile, the switch control circuit designed based on the fast, high-current and simple Thin Film Transistor (TFT) technology has lower cost, and the reconfigurable capability and functions of the antenna are greatly improved compared with the reconfigurable design of the antenna by adopting a microwave PIN diode, a gallium arsenide transistor, a varactor diode and an MEMS as a switching device.
The reconfigurable multifunctional antenna array based on the rapid, high-current and simple distributed direct drive array can improve the size of an antenna basic unit and the position control precision in an array environment to 50 micrometers through the distributed direct drive array based on the rapid, high-current and simple TFT matrix drive technology, and is far higher than the 1/2-1/8 wavelength size in the design of the conventional reconfigurable antenna with the sub-wavelength periodic structure, so that more accurate phase control and beam pointing can be realized; and because of the low efficiency caused by the operation of only a part of antenna units in the design of the conventional reconfigurable antenna with the sub-wavelength periodic structure under the array condition, the invention can ensure that the units at the required working positions in the antenna port surface participate in radiation, and has higher radiation efficiency and lower radar scattering sectional area.
The invention provides a semiconductor plasma basic unit, which is formed into a quasi-SPIN-dry film (SPIN) structure or a near-NIN structure by replacing a silicon material in a traditional SPIN junction with a metal oxide semiconductor material such as tin oxide (SnO 2), titanium oxide (TiO 2), zinc oxide (ZnO) and oxides formed by doping the metal oxide semiconductor material. The material of the dielectric substrate of the semiconductor plasma basic unit is not limited to silicon, and the manufacture of the semiconductor plasma antenna can be realized on glass, sapphire, silicon carbide and other plane or curved dielectric substrates. Breaks through the limitation of the silicon chip on the product size and the process production line, and simultaneously effectively reduces the manufacturing difficulty and the manufacturing cost of the product.
Drawings
FIG. 1 (a) is a schematic structural view of a semiconductor plasma basic unit in an embodiment;
FIG. 1 (b) is a schematic diagram of a semiconductor plasma layer structure with an isolation trench structure in an embodiment;
FIG. 1 (c) is a schematic view of a semiconductor plasma layer structure without isolation trench structure in an embodiment;
FIG. 1 (d) is a process flow of a semiconductor plasma layer fabrication process based on existing SOI technology in an embodiment;
FIG. 1 (e) is a process flow for fabricating a semiconductor plasma layer based on a metal oxide semiconductor material in an embodiment;
FIG. 2 is a schematic diagram of a fast, high current, simple distributed direct drive array circuit in an embodiment;
fig. 3 (a) is a schematic diagram of the basic structure of a reconfigurable multifunctional antenna array based on a semiconductor plasma unit and a fast, high-current, simple distributed direct-drive array in an embodiment (schematic top view);
fig. 3 (b) is a schematic diagram of the basic structure (schematic cross-sectional view) of a reconfigurable multifunctional antenna array based on a semiconductor plasma unit and a fast, high-current, simple distributed direct-drive array in an embodiment;
FIG. 3 (c) is a schematic diagram of a connection relationship between a semiconductor-based plasma cell and a fast, high-current, simple distributed direct drive array in an embodiment;
FIG. 3 (d) is a beam pointing schematic of a reconfigurable multi-function antenna array based on a semiconductor plasma unit and a fast, high current, simple distributed direct drive array in an embodiment;
FIG. 3 (e) is another beam pointing schematic of a reconfigurable multi-function antenna array based on a semiconductor plasma unit and a fast, high current, simple distributed direct drive array in an embodiment;
FIG. 4 is a schematic diagram (cross-sectional schematic diagram) of a one-dimensional electron beam scanning planar antenna array fed by a parallel plate waveguide;
FIG. 5 (a) is a schematic diagram (top view schematic diagram) of a two-dimensional electron beam scanning and polarization agile planar antenna array fed by a radial line waveguide;
FIG. 5 (b) is a schematic view (cross-sectional schematic view) of a two-dimensional electron beam scanning and polarization agile planar antenna array fed by a radial line waveguide;
FIG. 6 is a schematic diagram of a leaky-wave antenna array with rectangular waveguide feeds;
FIG. 7 is a schematic diagram of a reflective array antenna constructed from semiconductor plasmas;
Fig. 8 is a schematic diagram of a fractal antenna in the shape of a blade formed from a base unit of semiconductor plasma;
FIG. 9 is a schematic diagram of a helical antenna constructed from a semiconductor plasma as the basic unit;
FIG. 10 is a schematic diagram of a holographic artificial impedance surface antenna formed from a semiconductor plasma as a basic unit;
Fig. 11 (a) is a schematic view (schematic top view) of a partially reflective surface antenna composed of a semiconductor plasma as a basic unit;
fig. 11 (b) is a schematic view (schematic cross-sectional view) of a partially reflecting surface antenna constituted by a base unit of semiconductor plasma;
Fig. 12a is a schematic view (schematic plan view) of a phased array antenna formed of a transmission type frequency selective surface phase shifter constituted by a base unit of semiconductor plasma;
Fig. 12 b is a schematic diagram (side view schematic diagram) of a phased array antenna formed of a transmission type frequency selective surface phase shifter constituted by a base unit of semiconductor plasma;
fig. 13 is a schematic view of a quasi-three-dimensional corner reflector antenna composed of a basic unit of semiconductor plasma.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
On the contrary, the invention is intended to cover any alternatives, modifications, equivalents, and variations as may be included within the spirit and scope of the invention as defined by the appended claims. Further, in the following detailed description of the present invention, certain specific details are set forth in order to provide a better understanding of the present invention. The present invention will be fully understood by those skilled in the art without the details described herein.
Example 1
The embodiment provides a reconfigurable multifunctional antenna, which uses semiconductor plasma as a basic unit, and comprises a distributed direct-drive array circuit (the distributed direct-drive array circuit is based on a Thin Film Transistor (TFT) matrix driving technology, the switching time of the distributed direct-drive array circuit is short, the driving current is large, the driving mode is simple), and the working state or the non-working state of each basic unit is controlled by the distributed direct-drive array circuit, so that a radiation area or a non-radiation area of the antenna is dynamically formed in real time, and various electric parameters of the antenna are controlled; the working state is a plasma state, and the non-working state is a non-plasma state (insulating medium).
The method utilizes the basic unit of semiconductor plasma and the distributed direct drive array based on the rapid, high-current and simple TFT matrix drive technology to form the shape, the size and the correct position of each radiating unit of a planar or non-planar array antenna, realizes the reconfigurability of antenna frequency (multi-frequency band operation), the reconfigurability of polarization (linear polarization, circular polarization and elliptical polarization), the reconfigurability of beam control and gain agility (beam scanning), the reconfigurability of the position of side lobes and relative level thereof (anti-interference) and various combinations of the above, and can realize rapid and variable change of the antenna from one function to another, so that one antenna becomes a universal antenna.
The semiconductor plasma basic unit and the distributed direct drive array circuit are manufactured on the dielectric substrate through sputtering, deposition or etching processes, and the multifunctional antenna can integrate the semiconductor plasma and the distributed direct drive array based on the thin film transistor TFT matrix drive technology on silicon, glass, sapphire, silicon carbide and other plane or curved dielectric substrates through TFT panel processes or semiconductor processes.
The basic unit of semiconductor plasma is shown in fig. 1 (a): each semiconductor plasma basic unit 101 comprises a SPIN diode, an oxide layer 107 and a dielectric substrate 106, wherein the oxide layer 107 and the dielectric substrate 106 are sequentially arranged at the lower part of the SPIN diode; the SPIN diode is arranged on the surface of the semiconductor plasma basic unit and consists of an intrinsic layer 103, a P + layer 104 and an N + layer 105;
The SPIN diode adopts a transverse structure, the intrinsic layer is completely exposed at the upper part of the oxide layer 107, and the P + layer and the N + layer are respectively arranged at the upper parts of two sides of the intrinsic layer 103;
a metal contact 102 is provided on the upper portion of both the P + layer 104 and the N + layer 105 on the side away from the intrinsic layer.
The semiconductor plasma base unit 101 is obtained by injecting high concentration of charged carriers in a semiconductor solid medium (e.g., silicon, glass, sapphire, silicon carbide, and other planar or curved dielectric substrates), and can be classified into two types according to carrier injection techniques: the direct current biases the injected plasma and the laser irradiates the injected plasma. This embodiment is described using a plasma implanted with a dc bias as an example, and in other embodiments, a plasma design based on laser irradiation implantation may be employed. The semiconductor plasma basic unit 101 Surface PIN (SPIN) diode adopts a transverse structure, and the transverse structure can ensure that the semiconductor plasma basic unit 101 has high enough carrier concentration (more than 10 18/cm 3); when the semiconductor plasma base unit 101 is driven by a dc voltage, it behaves like a metal as a good conductor, the semiconductor plasma base unit acts like an island of plasma, defining the radiating and non-radiating areas of the antenna.
The plasma layer design and fabrication of semiconductor plasma antennas may be based on existing SOI technology, with a specific process flow as shown in fig. 1 (d). And forming an oxygen buried layer BOX in the silicon wafer, and then forming a silicon dioxide film on the upper surface of the silicon wafer by a thermal oxidation or vapor deposition method, so as to passivate the defect state of the silicon surface. On the basis, isolation grooves between the semiconductor plasmas are etched in silicon on the upper portion of the oxygen burying layer, then the isolation grooves are oxidized, and after the oxidation is completed, the semiconductor plasmas are manufactured in the areas between the isolation grooves. As shown in fig. 1 (b), the SPIN diode on top of each semiconductor plasma base cell 101 includes heavily doped P + region 104 and N + region 105 and intrinsic layer 103, and is independent. The isolation groove 108 is formed between the SPIN diodes of the semiconductor plasma basic unit 101 through silicon dioxide, and the purpose of the isolation groove is to prevent the semiconductor plasmas from interfering with each other during operation.
In addition, the present invention proposes a quasi-SPIN structure or NIN structure formed by replacing silicon material in the SPIN-on junction with a metal oxide semiconductor material such as tin oxide (SnO 2), titanium oxide (TiO 2) and zinc oxide (ZnO) and oxides formed by doping them, and illustrates the array distribution on a dielectric substrate when such a structure is used for manufacturing a semiconductor plasma antenna. Dielectric substrates include silicon, glass, sapphire, silicon carbide, and other planar or curved dielectric substrates.
A specific process flow for fabricating a plasma layer of a semiconductor plasmon antenna array based on a metal oxide semiconductor material is shown in fig. 1 (e). After the dielectric substrate is effectively cleaned, a dielectric film with the thickness of 50-200 nanometers, such as a silicon nitride (SiNx) film, a silicon oxide film and the like, is deposited on the upper surface of the dielectric substrate. Then, a layer of metal oxide semiconductor film is deposited on the surface of the dielectric film, and the thickness of the film is 1-200 micrometers. On the basis, a dielectric film (ESL layer) such as silicon nitride, silicon oxide and other dielectric films is deposited on the upper surface of the oxide semiconductor film, and the thickness is between 50 and 200 nanometers.
The metal oxide semiconductor film is removed from the above-formed structure by an etching process, except for the intrinsic region of the quasi-SPIN structure, while removing the corresponding portion of the upper dielectric film. On the basis, a layer of metal film is deposited on the surface of the structure, and then the corresponding area of the metal oxide semiconductor film is removed, so that the quasi-SPIN structure corresponding to fig. 1 (c) is formed. The semiconductor plasma units manufactured by the metal oxide semiconductor material hardly affect each other even when the semiconductor plasma units are closely spaced and simultaneously work, so that isolation grooves are not needed to be designed between the plasma units, and the space between the semiconductor plasma basic units is kept between 5 and 30 mu m.
The working principle of a reconfigurable multifunctional antenna array based on a fast, high-current, simple distributed direct-drive array is based on radiating elements formed by surface SPIN diodes, the low resistance in forward bias state depends on the concentration of carriers, a long carrier lifetime can be easily obtained using this high resistivity dielectric substrate (this embodiment is illustrated by silicon substrate, but also glass, sapphire, silicon carbide and other planar or curved dielectric substrates), which is very advantageous from the radio frequency point of view.
The SPIN device requires the provision of a long intrinsic layer 103. The injection of carriers under forward bias voltage of the intrinsic layer 103 creates a stable carrier plasma, which forms the electrical properties of the metal conductor in the highly mobile charge region. In the off state, the intrinsic layer exhibits high resistance and small parasitic capacitance, representing an insulator. When the concentration of carriers reaches 10 18/cm 3, the conductivity of silicon-based semiconductor plasmas can reach 1.6x10 4 S/m, which is sufficient for most radio frequency and microwave applications, although the conductivity of silicon-based semiconductor plasmas is much lower than that of copper 5.96 x 10 7 S/m.
The length of the semiconductor plasma basic unit is 20-200 micrometers, the width is 100-900 micrometers, the thickness is 20-70 micrometers, the width of the metal contact is 5-20 micrometers, the switching time of the plasma conducting state and the non-conducting state is less than 1 microsecond, the driving voltage of one basic unit is more than or equal to 0.5V, and the driving current is 0.1-30 mA.
The geometry of the semiconductor plasma 101 adopted in this embodiment is just equivalent to the pixel size of the lcd tv display screen, so that the distributed direct driving array based on the fast, high-current and simple TFT matrix driving technology is fully suitable for controlling the on or off state (i.e. working state or non-working state) of the semiconductor plasma basic unit 101.
The multifunctional antenna can integrate semiconductor plasmas and a distributed direct drive array based on a rapid, high-current and simple Thin Film Transistor (TFT) matrix drive technology on silicon, glass, sapphire, silicon carbide and other plane or curved surface medium substrates through a TFT panel technology or a semiconductor technology, successfully solves the technical problem that the conventional semiconductor plasma antenna is designed to adopt direct wiring or through holes formed in a medium plate to be connected with a drive circuit, and a plurality of control switch circuits can be driven by the same shift register in a row-column matrix drive mode, so that the complexity of the drive circuit is greatly simplified, more semiconductor plasma units can be driven, and the large-size semiconductor plasma antenna is manufactured. Meanwhile, the switch control circuit designed based on the fast, high-current and simple Thin Film Transistor (TFT) technology has lower cost, and the reconfigurable capability and functions of the antenna are greatly improved compared with the reconfigurable design of the antenna by adopting a microwave PIN diode, a gallium arsenide transistor, a varactor diode and an MEMS as a switching device.
The reconfigurable multifunctional antenna array can improve the size of an antenna basic unit and the position control precision in an array environment to 50 micrometers by a distributed direct drive array based on a rapid, high-current and simple TFT matrix drive technology, and is far higher than the 1/2-1/8 wavelength size in the design of a traditional sub-wavelength periodic structure reconfigurable antenna, so that more accurate phase control and beam pointing can be realized; and because of the low efficiency caused by the operation of only a part of antenna units in the design of the conventional reconfigurable antenna with the sub-wavelength periodic structure under the array condition, the invention can ensure that the units at the required working positions in the antenna port surface participate in radiation, has higher radiation efficiency, and simultaneously greatly reduces the radar scattering sectional area.
As shown in fig. 2, the fast, high-current, simple distributed direct-drive array circuit 201 includes a dielectric substrate 106, an array antenna controller 202, a column shift register set 203, and a control switch circuit 205, where the row shift register set 204 corresponds to the semiconductor plasma basic unit 101 one by one.
The distributed direct drive array circuit is capable of addressing each semiconductor plasma base unit 101 and controlling the conductive and non-conductive state of each semiconductor plasma base unit 101 by controlling the switching circuit 205 in one-to-one correspondence with the semiconductor plasma base unit;
The method for updating the matrix formed by all the control switch circuits 205 to control the semiconductor plasma basic unit 101 is specifically as follows:
The array controller 202 first sends the data required by each column unit on the first row to the corresponding column data line through the column shift register set 203, then sends the latch signal to the first row data bus through the row shift register set 204, and latches and outputs the data of each column to the output ports of each switch circuit 205 of the first row.
The progressive scanning is performed in the above manner, and data required for each line is latched to the output port of the switching circuit 205 of the corresponding unit until all the lines are scanned, and one frame of data configuration is completed.
Each control switch circuit 205 may be located at the periphery of the antenna array, or may be located inside the antenna array and configured adjacent to the semiconductor plasma unit 101 driven by the antenna array; the input of each control switch circuit 205 is individually driven by a shift register 203 and or 204 located outside the cell array, respectively, and each shift register 203 or 204 may have one or more outputs, and each output may simultaneously serially drive one or more control switch circuits 205.
In the data configuration process, the shift direction of the shift register can be flexibly adjusted according to the position of the data so as to accelerate the data configuration process.
The array controller 202 maintains the results of the current configuration of data per frame, i.e., the on-off state of each semiconductor plasma cell 101 in the array.
The semiconductor plasma basic unit is connected with the distributed direct drive array circuit through the metal contact;
The update rate of the distributed direct drive array circuit depends on the rate at which the data of the column shift register set 203 can be loaded, and the driving frequency of the semiconductor plasma basic unit 101 is limited only by the switching time of the control switch circuit 205, which is much shorter than the conventional liquid crystal active matrix driving time, and can reach microsecond magnitude, so as to meet the requirement of rapid antenna speed.
In liquid crystal driving display, an active matrix driving technology based on TFT (thin film transistor) direct addressing configures one semiconductor switching device for each pixel, and a data signal is directly applied to both ends of liquid crystal through a gate pulse to control. The response time of the current LCD is about 4ms, and the liquid crystal root does not respond well during the active period of the driving pulse signal (about 16.7 μs). Thus, there is a storage capacitor on each pixel of the LCD, and after the refresh signal is lost, the storage capacitor supplies power to the liquid crystal cell and keeps the refresh signal to the next picture coming. The presence of the storage capacitor provides the TFT LCD with memory but also has a negative impact. On the one hand, the voltage at two ends of the capacitor cannot be suddenly changed, and the characteristic can lead to the attenuation of the amplitude of a driving signal, the decline of steepness, the distortion of the signal and the reduction of image quality; on the other hand, the frequency response is deteriorated by the delay action of the capacitor, and the signal amplitude is reduced with the increase of the signal frequency. The storage capacitor in combination with the typical amorphous silicon TFT channel resistance increases the charge time, reducing the refresh rate. If the method is directly applied to the driving of the semiconductor plasma unit, the requirement of rapid speed change of the antenna cannot be met.
The update rate of the array mode adopted in the embodiment depends on the rate at which the data of the column shift register group 203 can be loaded, and the driving frequency of the semiconductor plasma basic unit 101 is limited only by the switching time of the control switch circuit 205, which is much shorter than the driving time of the traditional liquid crystal active matrix, and can reach microsecond magnitude, thereby meeting the requirement of rapid and rapid rate of the antenna.
In liquid crystal driving display, the maximum working current designed for one semiconductor switching device configured for each pixel is tens of mu A based on the rapid, high-current and simple TFT (thin film transistor) direct addressing active matrix driving technology, and the current required for maintaining the concentration of the carriers of a semiconductor plasma unit to be more than 10 18/cm 3 is between 0.1 and 30mA, so that the traditional liquid crystal active matrix driving design cannot meet the application requirement.
The distributed direct drive array circuit can independently provide direct drive voltage more than 0.5V and drive current of 0.1-30 mA for each plasma unit. Therefore, the distributed direct drive array circuit can independently provide direct drive voltage more than 0.5V and drive current of 0.1-30 mA for each plasma unit, and compared with the traditional drive circuit which only needs mu A level drive current in liquid crystal display, the distributed direct drive array circuit based on the thin film transistor TFT matrix drive technology is a high-current drive circuit.
Since the size of the semiconductor plasma basic unit is only 20-200 μm, and the size of a radiation unit in the microwave and millimeter wave frequency range is small and 1 millimeter and large and several centimeters, one radiation unit needs to be formed by tens or even hundreds of semiconductor plasma basic units, and most of the distributed direct drive array circuits based on the thin film transistor TFT matrix drive technology are drive circuits of serial and parallel combination of a plurality of plasma basic units, so that the drive circuit structure is simplified.
Therefore, we refer to such a driving circuit as a fast, high current, simple distributed direct drive array circuit based on thin film transistor TFT matrix driving technology.
By utilizing the two technologies, the basic unit of the semiconductor plasma is combined with the distributed direct drive array technology based on the rapid, high-current and simple TFT matrix drive technology, and the construction of the reconfigurable multifunctional antenna array based on the rapid, high-current and simple distributed direct drive array can be completed on the same production line, and the implementation of the reconfigurable multifunctional antenna array based on the rapid, high-current and simple distributed direct drive array can be realized.
Referring to fig. 3 (a), a schematic diagram of the basic structure of a typical reconfigurable multifunctional antenna array based on a fast, high current, simple distributed direct drive array is shown. The reconfigurable multifunctional antenna array 301 based on the rapid, high-current, simple distributed direct-drive array includes a semiconductor plasma layer 302 composed of a basic unit of the semiconductor plasma 101 and a distributed direct-drive array 201 based on the rapid, high-current, simple TFT matrix-drive technology, and as shown in fig. 3 (b), the semiconductor plasma layer 302 and the distributed direct-drive array 201 based on the rapid, high-current, simple TFT matrix-drive technology are located on the same dielectric substrate 106, which can be achieved by a TFT panel process, a semiconductor process, or the like. As shown in fig. 3 (c), each of the semiconductor plasma units 101 has a corresponding control switch circuit 205 connected to the metal contacts of the P + layer 104 of the semiconductor plasma unit 101 through a wire 206, and all the metal contacts of the N + layer 105 of the semiconductor plasma unit 101 are connected to the power ground through wires, when the control switch circuit 205 is turned on and outputs a driving voltage greater than 0V to the metal contacts of the P + layer 104 of the semiconductor plasma unit 101 corresponding thereto, the semiconductor plasma unit 101 is in an on state (conductive state); when the control switch circuit 205 turns off and outputs a voltage of 0V to the metal contact of the P + layer 104 of the semiconductor plasma unit 101 corresponding thereto, the semiconductor plasma unit 101 is in an off state (non-conductive state). The basic unit of each semiconductor plasma 101 on the semiconductor plasma layer 302 is thus controlled to be in a desired on or off state, respectively, by the fast, high current, simple distributed direct drive array antenna controller 202 of the array 201. As shown in fig. 3 (d), 3 (e), by means of the different on-state (conductive state) semiconductor plasma 303 and off-state (non-conductive state) semiconductor plasma 304, beams 305 or 306 of different polarizations, frequencies and directives as required can be formed.
The value input by the control switch circuit 205 is supplied from the shift register 203 or 204 controlled by the array antenna controller 202.
Fig. 3 (a) gives an example configuration in which the element drivers are arranged to drive the antenna array. Shift registers 203 and 204 are located in each row and each column, respectively. Although the rows and columns are illustrated as being perpendicular to each other, in one embodiment the matrix configuration may not actually be arranged in an antenna array, nor does it have to be perpendicular to each other, merely to illustrate the logical layout of the matrix configuration for direct drive control. In fig. 3 (a), shift registers 203 and 204 controlled by an array antenna controller 202 are located at the periphery of the antenna array, and each control switch circuit 205 may be located at the periphery of the antenna array or inside the antenna array and configured adjacent to the semiconductor plasma unit 101 driven by the same; the input of each control switch circuit 205 is individually driven by a shift register 203 or 204 located outside the cell array, respectively, and each shift register 203 or 204 may have one or more outputs, and each output may simultaneously drive one or more control switch circuits 205 in series. A plurality of parallel shift registers 203 and 204 are coupled and responsive to control signals from the array antenna controller 202 to generate parallel output control signals, the array antenna controller 202 causing the shift registers 203 and 204 to output signals on their driving circuits for controlling the inputs of the switching circuit 205. In other words, the array antenna controller 202 loads the shift registers 203 and 204 with these data to control which control switch circuit 205 is in the on state and which control switch circuit 205 is in the off state, thereby controlling the corresponding semiconductor plasma 101 to be in the conductive state 303 or the nonconductive state 304.
The following describes 9 embodiments of the present invention, whose conventional structural design is well known to those skilled in the art, and the greatest difference between the embodiments of the present invention and the conventional design is that, in the conventional design of the 9 antennas, the positions, sizes and shapes of the conductive state 303 and the non-conductive state 304 of the semiconductor plasma are fixed, and once the design is formed, the positions, sizes and shapes cannot be changed, so that the performance indexes such as frequency, polarization, pattern, phase accuracy and the like of the antenna are also determined; however, in the embodiment of the present invention, the positions, sizes and shapes of the conductive state 303 and the non-conductive state 304 of the semiconductor plasma of each antenna are controllable in real time, so that the performance index of the antenna can be defined in real time, and the reconfigurable antenna frequency (multi-band operation), the reconfigurable antenna polarization (linear polarization, circular polarization, elliptical polarization), the reconfigurable antenna beam control and gain agility (beam scanning), the reconfigurable antenna beam sidelobe position and the reconfigurable antenna beam sidelobe relative level (anti-interference) and the various combinations thereof can be realized, so that the antenna has greater flexibility and versatility, and one antenna can replace the functions of multiple antennas.
Referring to fig. 4, a planar array antenna 401 for one-dimensional electron beam scanning fed by a parallel plate waveguide is composed of a semiconductor plasma layer 302, a fast, high-current, simple distributed direct drive array 201 and a parallel plate waveguide lower panel 402, and the propagation direction of electromagnetic waves is shown as 403. The upper panel of the parallel plate waveguide is replaced by a semiconductor plasma layer 302, each semiconductor plasma base unit 101 controlling its on or off state with a distributed direct drive array 201 based on a fast, high current, simple TFT matrix drive technique. The semiconductor plasma basic unit 304 at the radiation slot position is controlled to the off state (non-conductive state), and the semiconductor plasma basic unit 303 at the other positions is controlled to the on state (conductive state). Thus, the polarization and beam direction of the antenna can be precisely controlled, so that the antenna becomes a one-dimensional electronic beam scanning phased array antenna with agile polarization. And such an antenna does not utilize separate phase shifters and TR elements, so that the cost of the antenna can be reduced by orders of magnitude, and there is no heat dissipation problem. The antenna is a low profile, lightweight, low power consumption, low cost planar antenna compared to conventional phased array antennas.
Fig. 5 (a) and 5 (b) are two-dimensional beam scanning and polarization agile planar array antennas 501 fed by radial line waveguides, which consist of radial line waveguides 502, semiconductor plasma layers 302, fast, high current, simple distributed direct drive arrays 201, coaxial probes 503, coaxial connectors 504, and dielectric layers 505. The upper conductive slab of radial line waveguide 502 is replaced by semiconductor plasma layer 302, the precise location, orientation and size of the slot being determined by the off state 304 of the semiconductor plasma basic cell, and the remainder being determined by the on state 303 of the semiconductor plasma basic cell. The scanning range of the main beam of the planar slot array antenna formed in the way is 360 degrees, the pitching is +/-72 degrees, and the antenna can be linearly polarized (vertical linear polarization and horizontal linear polarization) or circularly polarized (left-hand circular polarization and right-hand circular polarization) through the relative position and the orientation of the slots, so that the switching speed is extremely high and is about 1 microsecond.
Referring to fig. 6, which shows a leaky-wave antenna 601 fed by a rectangular waveguide, again the upper conductive wall of the rectangular waveguide 602 is replaced by a semiconductor plasma layer 302, and the radiating slot in this wall can be dynamically formed by the off state 304 of the semiconductor plasma basic unit, the position and size of the radiating slot being precisely controlled by a fast, high current, simple distributed direct drive array 201, which leaky-wave antenna pattern is directed substantially from end-to-side-and then back-to-back, which leaky-wave antenna scans the antenna beam not by frequency but rather the main beam by dynamically precisely determining the position of the slot as compared to conventional leaky-wave antennas.
Referring to fig. 7, which shows a schematic diagram of a reflective array antenna 701 formed by a semiconductor plasma layer 302, a fast, high-current, simple distributed direct-drive array 201, a feed source 702 and a floor 703, the silicon-based plasmas 101 and 304 in an operating state are silicon-based semiconductor plasmas 101 in a non-operating state, and the size of each patch antenna unit 303 is dynamically determined by the fast, high-current, simple distributed direct-drive array 201 to have a reflective phase value which should be present, so that the main beam of the antenna can be scanned.
Referring to fig. 8, it shows a fractal antenna 801 of a type consisting of a semiconductor plasma layer 302, a fast, high current, simple distributed direct drive array 201, which is commonly used in aircrafts because of its excellent aerodynamic properties, is a fractal antenna which uses self-similarity and plane/space filling properties, and which can be produced in a complex shape by several iterations of a generator (parent), and which can be formed in geometry and size by controlling the on-state 303 and off-state 304 of the semiconductor plasma basic cells on the semiconductor plasma layer 302 with the fast, high current, simple distributed direct drive array 201, thus having the advantage of a simple matching network and an easy impedance matching compared to conventional fractal antennas.
Referring to fig. 9, a schematic diagram of a planar spiral antenna 901 comprised of a semiconductor plasma layer 302, a fast, high current, simple distributed direct drive array 201 is shown. The shape and size of the helical antenna conductor in the figure is determined by the fact that the semiconductor plasma base unit 101 is controlled to its open state 303 by a fast, high current, simple distributed direct drive array 201, whose pitch is dynamically determined in the field by the fast, high current, simple distributed direct drive array 201, in comparison to conventional helical antennas. Therefore, the antenna has lower working frequency and can be made into left-hand circular polarization or right-hand circular polarization, and the functions of the traditional helical antenna are expanded.
Referring to fig. 10, a schematic diagram of a holographic artificial impedance surface antenna 1001 formed by a semiconductor plasma layer 302, a fast, high current, simple distributed direct drive array 201, the surface impedance at a location in the plane is determined by the size and periodic spacing of the sub-wavelength square patches. Compared with the traditional artificial impedance surface antenna, the antenna is formed by a rapid, high-current and simple distributed direct drive array 201 on site dynamically, so that the main beam of the antenna can be scanned randomly, and the polarization of the antenna can be changed by forming a long groove with different orientations on a square patch unit.
Referring to fig. 11 (a) and11 (b), it is shown that a partially reflective surface antenna 1101 is formed of a semiconductor plasma layer 302, a fast, high-current, simple distributed direct-drive array 201, a patch unit 1102, a feed 1103, a floor 1104, and a dielectric layer 1105, the conventional partially reflective surface is replaced by the semiconductor plasma layer 302, and the reflective unit is formed of a semiconductor plasma base unit 304 controlled to an off state by the fast, high-current, simple distributed direct-drive array 201, so that the formed antenna has both a beam scanning function and a polarization agility function.
Referring to fig. 12 (a) and 12 (b), there is shown a schematic diagram of a phased array antenna 1201 formed of a semiconductor plasma layer 302, a fast, high current, simple distributed direct drive array 201, and a radiating array 1203, wherein a transmission-type Frequency Selective Surface (FSS) 1202 formed of the semiconductor plasma layer 302, the fast, high current, simple distributed direct drive array 201 acts as a phase shifter. As is well known, conventional phased array antennas are multi-layer structures from top to bottom, in order: the first layer is a radiating element layer, the second layer is a phase shifter layer, the third layer is an active TR module layer, the fourth layer is a heat dissipation layer, the fifth layer is a control circuit layer, and the sixth layer is a power supply layer. We can put the phase shifter layer on top of the radiating element layer or not by reverse thinking, which is most suitable for transmission type FSS phase shifters. The transmission FSS phase shifter is composed of annular metal rings with sub-wavelength, and the phase shift quantity can be controlled by controlling the size and the period of the transmission FSS phase shifter. But the beam of the phased array requires a large range of scanning, while the phasor of the transmission FSS is related to the angle of incidence of the radio frequency electromagnetic wave. General studies have shown that the amount of phase shift of its transmission coefficient up to a tilt angle of incidence of 30 deg. is substantially independent of the angle of incidence and is dependent only on the size of the cells and the spacing between the cells, and therefore the phase shifter has to be made in two layers, the lower one tilting the beam only by 30 deg., and the upper one tilting the beam again by 30 deg., the two layers being able to scan the beam to a tilt + -60 deg..
The conventional transmission type phase shifter generates a phase gradient for scanning the beam by 30 ° in a pitch plane in one azimuth angle by means of the size and period of the control unit, and thus the beam scanning is performed in the range of 360 ° in azimuth and 60 ° in pitch, which requires relative and common mechanical movement of the upper and lower layers, which is not a true concept of phased array because no part is required to mechanically move in the phased array antenna.
While the transmission-type Frequency Selective Surface (FSS) 1202 formed by the controlled semiconductor plasma base unit 101 on the semiconductor plasma layer 302 is dynamically positioned, sized and cycled by the fast, high current, simple distributed direct drive array 201 in the field to form the location, size and periodicity of the transmission-type Frequency Selective Surface (FSS) 1202 forming unit 303 to form the appropriate phase gradient in the azimuth plane direction and to switch from azimuth to azimuth in the other direction, thus eliminating the relative and co-motion of the upper and lower FSSs, thus forming a true phased array antenna, but at a relatively low cost, low profile, low weight, while eliminating the need for heat dissipation from the active TR components.
Referring to fig. 13, a schematic diagram of a corner reflector antenna 1301 formed of a semiconductor plasma layer 302, a fast, high current, simple distributed direct drive array 201 is shown. As shown in fig. 13, the reflector 1302 is composed of the plasma cells 303 in an on state, instead of the metal plate of the conventional corner reflector antenna, and the dipole array 1303 is also composed of the plasma cells 303 in an on state. The corner reflector antenna 1301 thus constructed is a corner reflector antenna when it is operated; when it is not in operation, all mechanisms become essentially one medium. The radar cross-sectional area of the medium is far smaller than that of metal, so that the quasi-three-dimensional corner reflector antenna is very suitable for application in the fields of electronic countermeasure and the like.
In short, the application specific embodiment of the invention is not superior to grazing, the application range and the field are extremely wide, and the radiation area or the non-radiation area of the antenna is dynamically formed in real time like building blocks and puzzles, so that various electric parameters of the antenna are controlled.
In the description of the embodiments, reference is made to conventional techniques in the art for details that are well known to those skilled in the art.
Claims (8)
1. The reconfigurable multifunctional antenna is characterized by taking semiconductor plasmas as basic units, and comprises a distributed direct-drive array circuit, wherein the distributed direct-drive array circuit is used for controlling the working state or the non-working state of each semiconductor plasma basic unit, so that the radiation area or the non-radiation area of the antenna is dynamically formed in real time, and the frequency, the polarization, the beam control, the gain, the sidelobe position and the relative level of the antenna are controlled; the working state is a plasma state, and the non-working state is a non-plasma state; the distributed direct drive array circuit is based on a Thin Film Transistor (TFT) matrix drive technology, and has short switching time, large drive current and simple drive mode;
the SPIN junctions in the semiconductor plasma basic units are prepared from metal oxide semiconductor materials, so that the semiconductor plasma units hardly affect each other even when working at the same time when the intervals are very close, and therefore, isolation grooves are not required to be designed between the plasma units, and the space between the semiconductor plasma basic units is kept at 5-30 mu m;
The process for preparing the semiconductor plasma by adopting the metal oxide semiconductor material comprises the following steps: after the dielectric substrate is effectively cleaned, depositing a dielectric film with the thickness of 50-200 nanometers on the upper surface of the dielectric substrate; then, depositing a layer of metal oxide semiconductor film on the surface of the dielectric film, wherein the thickness of the film is 1-200 micrometers; on the basis, a dielectric film is deposited on the upper surface of the oxide semiconductor film, and the thickness of the dielectric film is 50-200 nanometers;
removing the part of the metal oxide semiconductor film outside the intrinsic region of the quasi-SPIN structure in the structure formed above by an etching process, and simultaneously removing the corresponding part of the upper dielectric film; on the basis, a layer of metal film is deposited on the surface of the structure, and then the corresponding area of the metal oxide semiconductor film is removed, so that a corresponding quasi-SPIN structure is formed;
The length of the semiconductor plasma basic unit is 20-200 micrometers, the width is 100-900 micrometers, the thickness is 20-70 micrometers, the width of the metal contact is 5-20 micrometers, the switching time of the conducting state and the non-conducting state of the plasma is less than 1 microsecond, the driving voltage of one basic unit is more than or equal to 0.5V, the driving current is 0.1-30 mA,
The control of the on or off state of the semiconductor plasma basic units adopts a distributed direct drive array based on a TFT matrix drive technology, wherein the drive mode is to simply drive all the semiconductor plasma basic units forming a metal conductive area in a matrix mode, the distributed direct drive array is integrated on the dielectric substrate, and the distributed direct drive array independently provides direct drive voltage of more than or equal to 0.5V and drive current of 0.1-30 mA for each semiconductor plasma basic unit, and the switching time is 1-30 mu s.
2. The reconfigurable multifunctional antenna of claim 1, wherein the semiconductor plasma basic unit and the distributed direct drive array circuit are located on the same surface of an antenna dielectric substrate to form a single layer structure.
3. The reconfigurable multifunctional antenna of claim 2, wherein the dielectric substrate is planar or curved using silicon, glass, sapphire or silicon carbide as a host material.
4. The reconfigurable multifunctional antenna of claim 1, wherein the metal oxide semiconductor material is any one of tin dioxide (SnO 2), titanium dioxide (TiO 2), zinc oxide (ZnO); or (b)
The metal oxide semiconductor material is formed by taking tin dioxide (SnO 2), titanium dioxide (TiO 2) or zinc oxide (ZnO) as a matrix and doping one or two elements of indium and gallium; or (b)
The metal oxide semiconductor material is Indium Zinc Oxide (IZO) or Indium Gallium Zinc Oxide (IGZO).
5. The reconfigurable multifunctional antenna of any of claims 1-4, wherein the reconfigurable multifunctional antenna is a planar multifunctional antenna or a quasi-three-dimensional multifunctional antenna.
6. The reconfigurable multifunctional antenna of any of claims 1-4, wherein the reconfigurable multifunctional antenna is any of a corner reflector antenna, a logarithmic spiral antenna, a phased array antenna employing a transmission type frequency selective surface FSS as a phase shifter, or a blade type typing antenna.
7. The reconfigurable multifunctional antenna of any of claims 1-4, wherein the reconfigurable multifunctional antenna is capable of achieving any one or any two or more of antenna frequency reconfigurability, polarization reconfigurability, beam steering and gain agility reconfigurability, side lobes and reconfigurability of their relative levels.
8. The reconfigurable multifunctional antenna of claim 5, wherein the reconfigurable multifunctional antenna is capable of realizing any one or any two or more of the reconfigurability of antenna frequency, the reconfigurability of polarization, the reconfigurability of beam control and gain agility, side lobes and the reconfigurability of relative level thereof.
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| US11804660B2 (en) * | 2019-02-25 | 2023-10-31 | Huawei Technologies Co., Ltd. | Antenna for integration with a display |
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