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CN108766205A - A kind of generation technique of antifalsification label and the antifalsification label - Google Patents

A kind of generation technique of antifalsification label and the antifalsification label Download PDF

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Publication number
CN108766205A
CN108766205A CN201810572367.9A CN201810572367A CN108766205A CN 108766205 A CN108766205 A CN 108766205A CN 201810572367 A CN201810572367 A CN 201810572367A CN 108766205 A CN108766205 A CN 108766205A
Authority
CN
China
Prior art keywords
layer
tio
sio
thickness
nanometers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810572367.9A
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Chinese (zh)
Inventor
周全
邹朋
许远飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tiantong (jiaxing) New Material Co Ltd
Original Assignee
Tiantong (jiaxing) New Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tiantong (jiaxing) New Material Co Ltd filed Critical Tiantong (jiaxing) New Material Co Ltd
Priority to CN201810572367.9A priority Critical patent/CN108766205A/en
Publication of CN108766205A publication Critical patent/CN108766205A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F3/00Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
    • G09F3/02Forms or constructions
    • G09F3/0291Labels or tickets undergoing a change under particular conditions, e.g. heat, radiation, passage of time
    • G09F3/0294Labels or tickets undergoing a change under particular conditions, e.g. heat, radiation, passage of time where the change is not permanent, e.g. labels only readable under a special light, temperature indicating labels and the like
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F3/00Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
    • G09F3/02Forms or constructions
    • G09F2003/0257Multilayer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a kind of antifalsification label, the antifalsification label is an effigurate film layer of tool, and film layer includes the first TiO successively2Layer, the first SiO2Layer, the 2nd TiO2Layer, the 2nd SiO2Layer, the 3rd TiO2Layer, the 3rd SiO2Layer, the 4th TiO2Layer, the 4th SiO2Layer, the 5th TiO2Layer, the 5th SiO2Layer, the 6th TiO2Layer, the 6th SiO2Layer, the 7th TiO2Layer, the 7th SiO2Layer, the 8th TiO2Layer, the 8th SiO2Layer, the 9th TiO2Layer, the 9th SiO2Layer, the tenth TiO2Layer, the tenth SiO2Layer, the 11st TiO2Layer, the 11st SiO2Layer, the 12nd TiO2Layer, the 12nd SiO2Layer, the 13rd TiO2Layer, the 13rd SiO2Layer.The antifalsification label of the present invention generates the antifalsification label of formulation shape by blocking coating technique.The antifalsification label of the present invention can be widely used on various product, and tag recognition is easy to operate, and recognition effect is apparent, it is not easy to which counterfeit, anti-counterfeiting cost is low.

Description

A kind of generation technique of antifalsification label and the antifalsification label
Technical field
The present invention relates to a kind of antifalsification label and the generation techniques of the antifalsification label.
Background technology
Antifalsification label scientific name anti-counterfeiting mark is the mark with anti-fake effect.Antifalsification label include laser anti-counterfeiting label, Double card antifalsification label, images outputting laser anti fake label, picture and text disclose antifalsification label etc..Existing antifalsification label is to palming off phenomenon Play the role of it is certain prevent, but itself there is also certain drawbacks:Technically simple, anti-counterfeiting characteristic does not have unique Property, antifalsification label itself is also easy counterfeit;Identification is complicated, strongly professional, and ordinary consumer can not pass through antifalsification label To screen the true and false of commodity;Label is easily damaged, and is easy to be wiped out, or just lose anti-fake effect after getting wet.This hair It is bright aiming at the deficiencies in the prior art, propose a kind of antifalsification label and the generation technique of the antifalsification label.
Invention content
In order to solve the above technical problems, the technical solution adopted by the present invention is:A kind of antifalsification label, the antifalsification label are The one effigurate film layer of tool, film layer includes the first TiO successively2Layer, the first SiO2Layer, the 2nd TiO2Layer, the 2nd SiO2 Layer, the 3rd TiO2Layer, the 3rd SiO2Layer, the 4th TiO2Layer, the 4th SiO2Layer, the 5th TiO2Layer, the 5th SiO2Layer, the 6th TiO2 Layer, the 6th SiO2Layer, the 7th TiO2Layer, the 7th SiO2Layer, the 8th TiO2Layer, the 8th SiO2Layer, the 9th TiO2Layer, the 9th SiO2 Layer, the tenth TiO2Layer, the tenth SiO2Layer, the 11st TiO2Layer, the 11st SiO2Layer, the 12nd TiO2Layer, the 12nd SiO2Layer, the 13 TiO2Layer, the 13rd SiO2Layer.
First TiO as a preferred embodiment of the above solution,2The thickness of layer is 8.68 nanometers;First SiO2Layer thickness be 56.21 nanometers;2nd TiO2The thickness of layer is 24.43 nanometers;2nd SiO2The thickness of layer is 43.19 nanometers;3rd TiO2Layer Thickness is 33.73 nanometers;3rd SiO2The thickness of layer is 48.33 nanometers;4th TiO2The thickness of layer is 28.45 nanometers;4th SiO2The thickness of layer is 55.53 nanometers;5th TiO2The thickness of layer is 31.75 nanometers;5th SiO2The thickness of layer is received for 49.10 Rice;6th TiO2The thickness of layer is 31.74 nanometers;6th SiO2The thickness of layer is 56.56 nanometers;7th TiO2Layer thickness be 30.72 nanometers;7th SiO2The thickness of layer is 50.37 nanometers;8th TiO2The thickness of layer is 32.71 nanometers;8th SiO2Layer Thickness is 58.13 nanometers;9th TiO2The thickness of layer is 28.69 nanometers;9th SiO2The thickness of layer is 49.62 nanometers;Tenth TiO2The thickness of layer is 35.78 nanometers;Tenth SiO2The thickness of layer is 57.19 nanometers;11st TiO2The thickness of layer is 19.73 Nanometer;11st SiO2The thickness of layer is 65.87 nanometers;12nd TiO2The thickness of layer is 33.19 nanometers;12nd SiO2Layer Thickness be 9.68 nanometers;13rd TiO2The thickness of layer is 68.61 nanometers;13rd SiO2The thickness of layer is 84.96 nanometers.
A kind of generation technique of antifalsification label, is covered using shelter with holes on product, and vacuum vapor plating skill is utilized Art plates the first TiO successively against hole2Layer, the first SiO2Layer, the 2nd TiO2Layer, the 2nd SiO2Layer, the 3rd TiO2Layer, the 3rd SiO2 Layer, the 4th TiO2Layer, the 4th SiO2Layer, the 5th TiO2Layer, the 5th SiO2Layer, the 6th TiO2Layer, the 6th SiO2Layer, the 7th TiO2 Layer, the 7th SiO2Layer, the 8th TiO2Layer, the 8th SiO2Layer, the 9th TiO2Layer, the 9th SiO2Layer, the tenth TiO2Layer, the tenth SiO2 Layer, the 11st TiO2Layer, the 11st SiO2Layer, the 12nd TiO2Layer, the 12nd SiO2Layer, the 13rd TiO2Layer, the 13rd SiO2 Layer forms film layer identical with the shape in hole on product, removes shelter, completes the generation of antifalsification label on product.
The present invention operation principle be:Utilize the TiO of different-thickness2Layer and SiO2Layer to the transmitance of different-waveband light not Same principle, by the TiO of specific thicknesses2Layer and SiO2Layer alternately and repeatedly cooperatively forms film layer.Plated film is blocked in product surface to generate Film layer with certain pattern form forms antifalsification label.Under day ordinary ray irradiation, pattern can not show antifalsification label, work as purple When UV light irradiates antifalsification label, there is the pattern cleaned, to reach antifalse effect.
The beneficial effects of the invention are as follows:The antifalsification label of the present invention can be widely used on various product, and label is known Not easy to operate, recognition effect is apparent, it is not easy to which counterfeit, anti-counterfeiting cost is low.
Description of the drawings
Fig. 1 is the transmitance of different wavelengths of light under the illumination of this antifalsification label.
Specific implementation mode
Embodiment one
A shelter with holes is prepared first, and the shape in hole can be the pictorial trademark of product, or the security pattern formulated. Shelter with holes is covered on product, using vacuum evaporation coating membrane technology, the first TiO is plated successively against hole2Layer, the first SiO2 Layer, the 2nd TiO2Layer, the 2nd SiO2Layer, the 3rd TiO2Layer, the 3rd SiO2Layer, the 4th TiO2Layer, the 4th SiO2Layer, the 5th TiO2 Layer, the 5th SiO2Layer, the 6th TiO2Layer, the 6th SiO2Layer, the 7th TiO2Layer, the 7th SiO2Layer, the 8th TiO2Layer, the 8th SiO2 Layer, the 9th TiO2Layer, the 9th SiO2Layer, the tenth TiO2Layer, the tenth SiO2Layer, the 11st TiO2Layer, the 11st SiO2Layer, the 12nd TiO2Layer, the 12nd SiO2Layer, the 13rd TiO2Layer, the 13rd SiO2Layer, wherein the first TiO2The thickness of layer is 8.68 nanometers;The One SiO2The thickness of layer is 56.21 nanometers;2nd TiO2The thickness of layer is 24.43 nanometers;2nd SiO2The thickness of layer is 43.19 Nanometer;3rd TiO2The thickness of layer is 33.73 nanometers;3rd SiO2The thickness of layer is 48.33 nanometers;4th TiO2The thickness of layer It is 28.45 nanometers;4th SiO2The thickness of layer is 55.53 nanometers;5th TiO2The thickness of layer is 31.75 nanometers;5th SiO2Layer Thickness be 49.10 nanometers;6th TiO2The thickness of layer is 31.74 nanometers;6th SiO2The thickness of layer is 56.56 nanometers;7th TiO2The thickness of layer is 30.72 nanometers;7th SiO2The thickness of layer is 50.37 nanometers;8th TiO2The thickness of layer is received for 32.71 Rice;8th SiO2The thickness of layer is 58.13 nanometers;9th TiO2The thickness of layer is 28.69 nanometers;9th SiO2Layer thickness be 49.62 nanometers;Tenth TiO2The thickness of layer is 35.78 nanometers;Tenth SiO2The thickness of layer is 57.19 nanometers;11st TiO2Layer Thickness be 19.73 nanometers;11st SiO2The thickness of layer is 65.87 nanometers;12nd TiO2The thickness of layer is 33.19 nanometers; 12nd SiO2The thickness of layer is 9.68 nanometers;13rd TiO2The thickness of layer is 68.61 nanometers;13rd SiO2The thickness of layer It is 84.96 nanometers.Film layer identical with the shape in hole is formed on product, removes shelter, completes antifalsification label on product It generates.Film layer is subjected to spectrum test, obtained test data, can using the generation technique of the present invention as shown in Figure 1, therefore It is formed under ultraviolet light and shows clear pattern, the film layer of pattern will not be shown under the irradiation of daily light.Film layer being capable of conduct The antifalsification label of product uses, and antifalse effect is good, and when anti-counterfeit recognition is easy to operate, and antifalsification label is not easy to be imitated.
The preferred embodiment of the present invention has been described in detail above, it should be understood that those skilled in the art without It needs creative work according to the present invention can conceive and makes many modifications and variations, therefore, all technologies in the art Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea Technical solution, all should be in the protection domain being defined in the patent claims.

Claims (3)

1. a kind of antifalsification label, which is characterized in that the antifalsification label is an effigurate film layer of tool, and film layer includes successively There is the first TiO2Layer, the first SiO2Layer, the 2nd TiO2Layer, the 2nd SiO2Layer, the 3rd TiO2Layer, the 3rd SiO2Layer, the 4th TiO2Layer, 4th SiO2Layer, the 5th TiO2Layer, the 5th SiO2Layer, the 6th TiO2Layer, the 6th SiO2Layer, the 7th TiO2Layer, the 7th SiO2Layer, the Eight TiO2Layer, the 8th SiO2Layer, the 9th TiO2Layer, the 9th SiO2Layer, the tenth TiO2Layer, the tenth SiO2Layer, the 11st TiO2Layer, the 11 SiO2Layer, the 12nd TiO2Layer, the 12nd SiO2Layer, the 13rd TiO2Layer, the 13rd SiO2Layer.
2. antifalsification label as described in claim 1, which is characterized in that the first TiO2The thickness of layer is 8.68 nanometers;First SiO2The thickness of layer is 56.21 nanometers;2nd TiO2The thickness of layer is 24.43 nanometers;2nd SiO2The thickness of layer is received for 43.19 Rice;3rd TiO2The thickness of layer is 33.73 nanometers;3rd SiO2The thickness of layer is 48.33 nanometers;4th TiO2Layer thickness be 28.45 nanometers;4th SiO2The thickness of layer is 55.53 nanometers;5th TiO2The thickness of layer is 31.75 nanometers;5th SiO2Layer Thickness is 49.10 nanometers;6th TiO2The thickness of layer is 31.74 nanometers;6th SiO2The thickness of layer is 56.56 nanometers;7th TiO2The thickness of layer is 30.72 nanometers;7th SiO2The thickness of layer is 50.37 nanometers;8th TiO2The thickness of layer is received for 32.71 Rice;8th SiO2The thickness of layer is 58.13 nanometers;9th TiO2The thickness of layer is 28.69 nanometers;9th SiO2Layer thickness be 49.62 nanometers;Tenth TiO2The thickness of layer is 35.78 nanometers;Tenth SiO2The thickness of layer is 57.19 nanometers;11st TiO2Layer Thickness be 19.73 nanometers;11st SiO2The thickness of layer is 65.87 nanometers;12nd TiO2The thickness of layer is 33.19 nanometers; 12nd SiO2The thickness of layer is 9.68 nanometers;13rd TiO2The thickness of layer is 68.61 nanometers;13rd SiO2The thickness of layer It is 84.96 nanometers.
3. a kind of generation technique of antifalsification label as described in claim 1, which is characterized in that covered and produced using shelter with holes On product, using vacuum evaporation coating membrane technology, the first TiO is plated successively against hole2Layer, the first SiO2Layer, the 2nd TiO2Layer, second SiO2Layer, the 3rd TiO2Layer, the 3rd SiO2Layer, the 4th TiO2Layer, the 4th SiO2Layer, the 5th TiO2Layer, the 5th SiO2Layer, the 6th TiO2Layer, the 6th SiO2Layer, the 7th TiO2Layer, the 7th SiO2Layer, the 8th TiO2Layer, the 8th SiO2Layer, the 9th TiO2Layer, the 9th SiO2Layer, the tenth TiO2Layer, the tenth SiO2Layer, the 11st TiO2Layer, the 11st SiO2Layer, the 12nd TiO2Layer, the 12nd SiO2 Layer, the 13rd TiO2Layer, the 13rd SiO2Layer forms film layer identical with the shape in hole on product, removes shelter, completes The generation of antifalsification label on product.
CN201810572367.9A 2018-06-06 2018-06-06 A kind of generation technique of antifalsification label and the antifalsification label Pending CN108766205A (en)

Priority Applications (1)

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CN201810572367.9A CN108766205A (en) 2018-06-06 2018-06-06 A kind of generation technique of antifalsification label and the antifalsification label

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Application Number Priority Date Filing Date Title
CN201810572367.9A CN108766205A (en) 2018-06-06 2018-06-06 A kind of generation technique of antifalsification label and the antifalsification label

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1123921A (en) * 1993-12-27 1996-06-05 凸版印刷株式会社 Transparent Holographic Seal
CN2234640Y (en) * 1995-12-22 1996-09-04 电子科技大学 Laser holographic watermark card protecting film
CN102514443A (en) * 2011-12-09 2012-06-27 中钞特种防伪科技有限公司 Optical anti-counterfeiting element
CN103852815A (en) * 2014-03-11 2014-06-11 深圳市科彩印务有限公司 Variable saturation optical interference radiochromic anti-counterfeit film and preparation method thereof
CN104620159A (en) * 2012-09-27 2015-05-13 富士胶片株式会社 Polarized film and birefringent object to which polarized film is affixed

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1123921A (en) * 1993-12-27 1996-06-05 凸版印刷株式会社 Transparent Holographic Seal
CN2234640Y (en) * 1995-12-22 1996-09-04 电子科技大学 Laser holographic watermark card protecting film
CN102514443A (en) * 2011-12-09 2012-06-27 中钞特种防伪科技有限公司 Optical anti-counterfeiting element
CN104620159A (en) * 2012-09-27 2015-05-13 富士胶片株式会社 Polarized film and birefringent object to which polarized film is affixed
CN103852815A (en) * 2014-03-11 2014-06-11 深圳市科彩印务有限公司 Variable saturation optical interference radiochromic anti-counterfeit film and preparation method thereof

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Application publication date: 20181106