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CN108700768B - 减少衍射图案的阶 - Google Patents

减少衍射图案的阶 Download PDF

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Publication number
CN108700768B
CN108700768B CN201780011820.2A CN201780011820A CN108700768B CN 108700768 B CN108700768 B CN 108700768B CN 201780011820 A CN201780011820 A CN 201780011820A CN 108700768 B CN108700768 B CN 108700768B
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pixel
phase modulation
pixel electrodes
liquid crystal
inter
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CN108700768A (zh
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A·乔治欧
J·S·科林
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Microsoft Technology Licensing LLC
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Microsoft Technology Licensing LLC
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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  • Liquid Crystal (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

涉及减少相位调制设备中衍射图案的阶的示例被公开。示例相位调制设备包括具有相对的第一侧和第二侧的相位调制层、与相位调制层的第一侧相邻的公共电极、与相位调制层的第二侧相邻的多个像素电极、以及被设置在相位调制层和像素电极之间模糊材料。在相位调制设备的示例中，模糊材料被配置为平滑相位调制层中的、与像素电极相关联的局部区域之间的相变，像素电极具有像素间距，像素电极通过像素间距沿着相位调制层被分布，并且像素电极通过像素间间隙(g)被彼此分开，其中像素间间隙与像素间距的比率在0.50和1.0之间。

Description

减少衍射图案的阶
技术领域
本公开涉及减少相位调制设备中衍射图案的阶。
背景技术
光学系统可以包括由照明源照射的成像光学器件，以产生可视图像。成像光学器件可以是透射的，使得通过调制穿过成像光学器件的光来形成图像，或者是反射的，使得通过调制从成像光学器件反射的光来形成图像。
发明内容
根据一些实施方式，示例相位调制设备包括具有相对的第一侧和第二侧的相位调制层、与相位调制层的第一侧相邻的公共电极、与相位调制层的第二侧相邻的多个像素电极、以及被设置在相位调制层和像素电极之间模糊材料。在相位调制设备的示例中，模糊材料被配置为平滑相位调制层中的、与像素电极相关联的局部区域之间的相变，像素电极具有像素间距，像素电极通过像素间距沿着相位调制层被分布，并且像素电极通过像素间间隙被彼此分开，其中像素间间隙与像素间距的比率在0.50和1.0之间。
附图说明
图1示出了示例全息图和图像输出表示。
图2示出了第一示例相位调制设备的横截面视图。
图3示出了第二示例相位调制设备的横截面视图，其包括多个反射元件。
图4示出了第三示例相位调制设备的横截面视图，其包括像素电极之间的材料、在它们顶部上的高介电常数材料层以及被设置在像素电极顶部上方的多个反射元件。
图5示出了第四示例相位调制设备的横截面视图，其包括像素电极以及被设置在它们之间的反射材料。
具体实施方式
相位调制设备(诸如电寻址空间光调制器(EA-SLM))可以使用衍射来形成强度分布。强度分布可以是图像，该图像被用作信息显示，以用于投射用于深度感测的点阵列，或甚至用于车辆和建筑物中的照明目的。相位调制设备可以是透射的(如许多大型面板液晶显示器(LCD))或者是反射的(如硅上液晶(LCoS)设备)。
EA-SLM通常是像素化设备，其中方形像素被放置在规则的阵列上。具有行和列像素的空间量化设备通常将形成中心衍射图案并在水平轴和垂直轴上形成该图案的重复。这些阶是由于混叠而形成的；任何规则采样的信号将以等于采样频率的频率重复其频谱。例如，图1示意性地示出了由全息图104产生的混叠图像102的表示。如图所示，中心或期望的图像106(例如，中间具有字母“F”的框)沿着图像102的水平轴和垂直轴(例如，在中心的期望的图像的上方、下方和侧面)被重复作为不需要的衍射阶(例如，如由通过复制框的“X”所指示)。中心频谱/信号的这些重复被称为更高阶。更高阶可以在EA-SLM的远场(例如，傅里叶平面)或中间平面上。中心或期望的图像可以位于远场平面和/或中间平面上，并且可以位于与更高阶相同的平面或不同的平面上。
如果像素具有无穷小的尺寸，则更高阶将具有与中心图像相同的强度；例如，如果像素是有效的点源。然而，由于像素尺寸是有限的，随着远离中心阶，衍射图案的幅度进一步减小。这被称为孔径定理，在具有方形像素的夫琅和费/傅里叶全息图的特定情况下，图像被乘以sinc函数，通常被称为sinc包络。更高阶通常是衍射系统的不需要的意外后果。在所有情况下，光线都会损失并且效率被降低。在一些情况下，更高阶可能会干扰中心的和需要的图像，并且附加的步骤被用来去除更高阶。例如，一些用于减少衍射并去除不需要的更高阶图像的方法包括利用孔径光阑(例如，将系统的输出聚焦在仅允许需要的阶通过的孔径上)、提供角度过滤器(例如，过滤掉不需要的阶)、以及执行像素过采样(例如，创建具有比所需更高空间频率的空间光调制器，以便用更多像素对数字全息图进行过采样—例如，单个像素在过采样的SLM中可以用像素阵列来替换)。然而，这些方法的每种方法可能使得系统更大、更复杂并增加其成本。
本公开提供了用于去除由相位调制设备产生的图像中的不需要的更高阶的附加或备选方法。上述像素过采样方法可以通过缩小像素大小来减少或消除不需要的阶，使得像素之间的边缘场和相位调制层(例如，液晶指向矢)的电阻变形用于减少相邻像素之间的急剧相变，以便相位分布起到类似于空间连续的功能的作用。基本上，低通滤波器在全息图上被创建，它去除更高的空间频率并减少或去除更高阶。本公开的方法类似地涉及相位调制设备中的相位调制层的边缘场和电阻，以便减少或去除输出图像中的更高阶衍射，但相对于上述像素过采样示例，降低了设备背板中的复杂性。根据本公开内容，通过在像素电极上引入一层材料来实现相位调制设备中相位分布的进一步平滑化(或低通滤波)，该材料被配置为通过模糊或平滑由于像素电极和公共电极之间的电压降而生成的电场来模糊或平滑相位调制设备的相位调制层中的相变。模糊材料的性质可以取决于在其中模糊材料被包括的相位调制设备的类型和配置。包括用于减少或去除由相位调制设备产生的图像中的更高阶衍射的模糊材料的相位调制设备的示例配置在下面被描述。
图2示出了第一示例相位调制设备200的横截面。相位调制设备200包括相位调制层202，其分别具有相对的第一侧204a和第二侧204b。在图示的示例中，相位调制层202包括液晶层，该液晶层具有被设置在其中的向列液晶206。相位调制设备200进一步包括与相位调制层的第一侧204a相邻的公共电极208、以及与相位调制层202的第二侧204b相邻并且被设置在背板211(例如硅背板)上的多个像素电极210。相应地，对于多个像素电极210中的每一个，向该像素电极应用电压(例如，经由控制器212)跨相位调制层202的相应局部区域产生该像素电极和公共电极208之间的电压降。电压降基于公共电极和相关联像素电极之间的差分电压。在图示的示例中，在0V像素电极与公共电极之间没有或只有可忽略的电压降。然而，在10V像素电极与公共电极之间存在电压降。应当理解，图示的示例中所示出的电压本质上是示例性的，并且任何合适的电压可以被应用到相关联的电极。
如图所示，10V像素电极与公共电极之间的电压降产生电场，该电场改变10V像素电极上方的液晶206的取向，产生相位调制的局部区域。如上所述，相位调制层202中从像素到像素的急剧相变可以导致在由相位调制设备产生的图像中产生不需要的更高阶衍射。
因此，相位调制设备200进一步包括被设置在相位调制层202与像素电极210之间的模糊材料214。模糊材料可以形成一层，该层被配置为平滑相位调制层中的、与像素电极相关联的局部区域之间的相变。模糊材料有效地使相位调制层移动更加远离像素电极，以使电场和电压电势在像素之间更加逐步地变化。此外，模糊材料可以包括具有与空气相比更大的电导率的材料，以使相邻像素之间的电场模糊可以在材料的小厚度上发生，同时像素和电极顶部之间的电压降被最小化。在最大化分辨率和最小化电压降之间提供良好平衡的模糊材料的示例是锆钛酸铅(PZT)，其相对介电常数在几百到几千之间。像素电极之间的电场模糊的效果是相位调制层的液晶在局部像素电极区域之间旋转得更慢(相对于在模糊层不存在时的旋转)，有效地在两个像素之间内插相位。
在图2中，相位调制层202的厚度被示出为“T”，并且模糊材料214的厚度被示出为“t”。为了使跨相位调制层的电压降最大化，模糊材料厚度上的电压降被最小化。因此，对于模糊材料，厚度与介电常数的比率可以是相位调制层的至少100倍。换言之，模糊材料可以被配置成使得：
εp/t>100*εLC/T，
其中εp是模糊材料的介电常数，并且εLC是相位调制层的介电常数。附加地，为了相邻电极之间的电场的有效传输，模糊材料可以被配置成以使以下条件被满足：
εp>10xεLC。
像素电极210具有像素间距，像素电极通过像素间距沿着相位调制层202的第二侧204b被分布。像素间距的示例测量由图2中的“D”示出，其测量在给定像素电极的相对侧上的像素间间隙(相邻像素电极之间的间隙，其示例在图2中由“g”示出)的中心之间的距离。在其他示例中，可以根据从第一像素电极的第一边缘到第二相邻像素电极的第一边缘，或者从第一像素电极的中心到第二相邻像素电极的中心来测量像素间距。
为了在相位调制层中提供电场和相位调制的有效模糊，像素电极之间的大间隙可以被提供。这是因为像素电极(作为导体)在其周围区域/体积中施加与其自身电势相似的电势。大的间隙可以通过包括较窄的像素电极来实现。例如，像素电极可以被设置尺寸和被确定分布，以使像素间间隙与像素间距的比率在0.50和小于1.0之间。具有非常窄的像素电极创建较大的过渡区域并且针对较高阶的衰减增加(例如，相对于较宽的像素电极)。
图3示出了包括窄电极的第二示例相位调制设备300的横截面图。相位调制设备300可以包括与上面关于图2描述的元件类似的元件。例如，相位调制设备300可以包括相位调制层302、公共电极308、被设置在背板311上的像素电极310、以及模糊材料314。这些元件可以类似于图2的共同命名的元件。相应地，图2的元件的一些或所有相关联描述可以应用于图3的相关元件。然而，在反射相位调制设备中，图3的较小像素电极(相对于图2的像素电极)可以减少用作镜子以反射入射光的区域。为了提供附加的反射表面，相位调制设备300进一步可以包括多个反射元件316，被设置在模糊材料314和相位调制层302之间，以反射入射光。
实现上述大像素间间隙的另一种方法包括在相位调制设备中利用高而薄的像素电极。图4示出了包括高和薄像素电极410的第三示例相位调制设备400的横截面图。相位调制设备400可以包括与上面关于图2和图3描述的元件类似的元件。例如，相位调制设备400可以包括相位调制层402、公共电极408、被设置于背板411上的像素电极410、类似于图2和图3的模糊材料414、以及类似于图3的多个反射元件416。这些元件可以类似于图2和图3的共同命名的元件。相应地，图2和图3的元件的一些或所有相关联描述可以应用于图4的相关联元件。
图4的像素电极410可以由不同的材料组成，诸如碳纳米管(CNT)。为了控制相邻像素电极的电场之间的干扰，像素电极之间的像素间间隙可以被填充和/或可以包括绝缘材料413，其可以是非反射的或最小反射的。绝缘体可以确保电极不会短路。例如，绝缘材料可包括SiO2(二氧化硅)，其具有低的相对介电常数(例如，约3.9)。每个像素电极可以具有大于电极的宽度(例如，垂直于光轴418的维度)的高度(例如，沿着/平行于从背板411到公共电极408的光轴418的维度)。在一些示例中，像素电极410中的一个或多个可以与像素间间隙中的绝缘材料的厚度大致相同的高度。在附加或备选示例中，像素电极410中的一个或多个可以比像素间间隙的绝缘材料更短，以使绝缘材料或其他材料在像素电极和模糊材料414之间被提供。在进一步地附加或备选示例中，像素电极410中的一个或多个可以比像素间间隙的绝缘材料更高，以使像素电极突出到模糊材料层中。
相对于具有较宽电极的设备，图4的示例的像素电极可以使LC的下表面/下侧上的电压梯度更加线性地(在电极之间，因为电极是薄的)变化。模糊材料的厚度可以被保持最小，因为模糊材料中的电场不受下面的电极的影响，在向像素电极应用电压时，导致相位调制层中的更快相位调制响应(相对于具有较厚模糊材料的系统)。此外，通过保持模糊材料的厚度很小，过渡区域几乎是像素间距的尺寸(例如，g/D比其他示例中的更接近于一)。通过最小化模糊材料的厚度，用于相位调制层的电压被最大化，因为模糊材料上的电压降较小。例如，模糊材料可以具有被保持低于1μm的厚度。在沉积像素电极的绝缘体和端子(例如，像素电极与背板的交叉点)之后，抛光可以被用来将相位调制设备的该区域的表面制成光学平坦表面(例如，在其上模糊材料可以被应用)。
另一示例方法包括在像素电极之间设置反射材料，以便去除模糊材料与相位调制层之间的单独的反射元件层。图5示出了第四示例相位调制设备500的横截面图，该第四示例相位调制设备500包括高而薄的像素电极，其中反射材料被设置在像素电极之间。相位调制设备500可以包括与上面关于图4描述的元件类似的元件。例如，相位调制设备500可以包括相位调制层502、公共电极508、被设置在背板511上的像素电极510以及模糊材料514。这些元件可以类似于图4的共同命名的元件。相应地，图4的元件的一些或所有相关联描述可以应用于图5的相关联元件。
然而，与图4的绝缘材料相反，图5的相位调制设备500的像素电极之间的一些或所有像素间间隙可以包括反射组件513，诸如电介质镜和/或四分之一波片。反射组件可以反射入射光，以使附加的反射元件可以被去除(例如，图4的反射元件416不被包括在图5的设备中)。相对于在像素电极顶部设置反射材料的设备，在像素电极之间设置反射材料可以增加设备的分辨率并增加对设备可用的电压驱动。
尽管出于说明目的，上述示例被呈现为二维结构，但是相位调制设备可以在三个维度上延伸，以便附图中所示的电极和/或其他结构可以在第三维度中作为单个元件(例如，作为单个条带)或作为元件/结构的阵列延伸。附加地，尽管反射相位调制设备被示出，但是在透射相位调制设备中可以包括类似的特征。如果设备是透射的，则所有层都将是透明的。如果设备是反射性的，则底层将是反射性的并且所有后续层都是透明的。所有层可以被沉积为连续的均匀层或图案化的较小结构。如果一层将充当镜子但被配置为跨其表面具有变化的电压，则后者是有用的。
另一示例提供了一种具有相位调制设备的成像系统，其包括：具有相对的第一侧和第二侧的相位调制层、与相位调制层的第一侧相邻的公共电极、与相位调制层的第二侧相邻的多个像素电极，其中对于多个像素电极中的每个像素电极，向该像素电极应用电压跨相位调制层的相应局部区域产生该像素电极与公共电极之间的电压降，其中像素电极具有像素电极通过其沿着相位调制层的第二侧分布的像素间距，其中像素电极通过像素间间隙而被彼此分开，其中像素间间隙与像素间距的比率在0.50和1.0之间，并且相位调制设备还包括被设置在相位调制层与像素电极之间的模糊材料，模糊材料被配置为平滑相位调制层中的、与像素电极相关联的局部区域之间的相变。在这样的示例中，模糊材料的介电常数与模糊材料的厚度的比率可以附加地或备选地比相位调制层的介电常数与相位调制层的厚度的比率的100倍大。在这样的示例中，多个像素电极中的每个像素电极可以附加地或备选地被设置在硅背板上，并且其中相位调制层包括液晶层。在这样的示例中，模糊材料可以附加地或备选地包括电介质镜。在这样的示例中，模糊材料可以附加地或备选地包括锆钛酸铅(PZT)。在这样的示例中，成像系统可以附加地或备选地还包括被设置在模糊材料与相位调制层之间的多个反射元件。在这样的示例中，电介质镜可以附加地或备选地被设置在至少一个像素间间隙内。在这样的示例中，四分之一波片可以附加地或备选地被设置在至少一个像素间间隙内。在这样的示例中，绝缘材料可以附加地或备选地被设置在至少一个像素间间隙内。在这样的示例中，像素电极可以附加地或备选地包括碳纳米管。在这样的示例中，每个像素电极的高度可以附加地或备选地小于被设置在像素间间隙内的材料的厚度。在这样的示例中，至少一个像素电极可以附加地或备选地突出到模糊材料中。任何或所有上述示例可以在各种实现中以任何合适的方式被组合。
另一示例提供了一种相位调制设备，其包括：具有相对的第一侧和第二侧的液晶层、与液晶层的第一侧相邻的公共电极、与液晶层的第二侧相邻的多个像素电极，其中对于多个像素电极中的每个像素电极，向该像素电极应用电压跨该液晶层的各个局部区域产生该像素电极与公共电极之间的电压降，其中像素电极具有像素电极通过其沿着液晶层的第二侧分布的像素间距，其中像素电极通过像素间间隙被彼此分开，其中像素间间隙与像素间距的比率在0.50和1.0之间，其中绝缘材料被设置在至少一个像素间间隙内，相位调制设备还包括被设置在液晶层与像素电极之间的模糊材料，模糊材料被配置为平滑液晶层中的、与像素电极相关联的局部区域之间的相变，并且相位调制设备还包括被设置在模糊材料和液晶层的第二侧之间的多个反射元件。在这样的示例中，模糊材料可以附加地或备选地包括锆钛酸铅(PZT)。在这样的示例中，每个像素电极的高度可以附加地或备选地小于被设置在至少一个像素间间隙内的绝缘材料的厚度。在这样的示例中，至少一个像素电极可以附加地或备选地突出到模糊材料中。在这样的示例中，像素电极可以附加地或备选地包括碳纳米管。任何或所有上述示例可以在各种实现中以任何合适的方式被组合。
另一示例提供了一种相位调制设备，其包括：具有相对的第一侧和第二侧的液晶层、与液晶层的第一侧相邻的公共电极、与液晶层的第二侧相邻的多个像素电极，其中对于多个像素电极中的每个像素电极，向该像素电极应用电压跨该液晶层的各个局部区域产生该像素电极与公共电极之间的电压降，其中像素电极具有像素电极通过其沿着液晶层的第二侧分布的像素间距，其中像素电极通过像素间间隙被彼此分开，其中像素间间隙与像素间距的比率在0.50和1.0之间，其中电介质镜和四分之一波片中的一个或多个被设置在至少一个像素间间隙内，并且相位调制设备还包括被设置在液晶层和像素电极之间的模糊材料，模糊材料被配置为平滑液晶层中的、与像素电极相关联的局部区域之间的相变。在这样的示例中，模糊材料可以附加地或备选地包括锆钛酸铅(PZT)。在这样的示例中，像素电极可以附加地或备选地包括碳纳米管。任何或所有上述示例可以在各种实现中以任何合适的方式被组合。
应当理解，本文所描述的配置和/或方法本质上是示例性的，并且这些具体实施例或示例不应被视为具有限制意义，因为许多变型是可能的。本文所描述的特定例程或方法可以表示任何数量的处理策略中的一个或多个。如此，所示出和/或所描述的各种动作可以以所示出和/或所描述的顺序、以其他顺序、并行地或省略地被执行。同样，上述过程的顺序可以被改变。
本公开的技术主题包括各种过程、系统和配置的所有新颖和非显而易见的组合和子组合，以及本文所公开的其他特征、功能、动作和/或性质、以及其任何和所有等同物。

Claims (20)

1.一种具有相位调制设备的成像系统，包括：
相位调制层，其具有相对的第一侧和第二侧；
公共电极，其与所述相位调制层的所述第一侧相邻；
多个像素电极，其与所述相位调制层的所述第二侧相邻，其中对于所述多个像素电极中的每个像素电极，向所述像素电极的电压的应用跨所述相位调制层的相应局部区域产生所述像素电极与所述公共电极之间的电压降；
其中所述多个像素电极具有像素间距，所述多个像素电极通过所述像素间距沿着所述相位调制层的所述第二侧被分布；
其中所述多个像素电极通过像素间间隙而被彼此分开，其中所述像素间间隙与所述像素间距的比率在0.50和1.0之间；以及
所述相位调制设备还包括被设置在所述相位调制层与所述多个像素电极之间的模糊材料，所述模糊材料具有比所述相位调制层更高的介电常数，并且被配置为平滑所述相位调制层中的液晶态的、与所述多个像素电极相关联的所述局部区域之间的相变。
2.根据权利要求1所述的成像系统，其中所述模糊材料的介电常数与所述模糊材料的厚度的比率比所述相位调制层的所述介电常数与所述相位调制层的厚度的比率的100倍更大。
3.根据权利要求1所述的成像系统，其中所述多个像素电极中的每个像素电极被设置在硅背板上，并且其中所述相位调制层包括液晶层。
4.根据权利要求1所述的成像系统，其中所述模糊材料包括电介质镜。
5.根据权利要求1所述的成像系统，其中所述模糊材料包括锆钛酸铅(PZT)。
6.根据权利要求1所述的成像系统，还包括被设置在所述模糊材料与所述相位调制层之间的多个反射元件。
7.根据权利要求1所述的成像系统，其中电介质镜被设置在至少一个像素间间隙内。
8.根据权利要求1所述的成像系统，其中四分之一波片被设置在至少一个像素间间隙内。
9.根据权利要求1所述的成像系统，其中绝缘材料被设置在至少一个像素间间隙内。
10.根据权利要求1所述的成像系统，其中所述多个像素电极包括碳纳米管。
11.根据权利要求1所述的成像系统，其中每个像素电极的高度小于被设置在所述像素间间隙内的材料的厚度。
12.根据权利要求1所述的成像系统，其中至少一个像素电极突出到所述模糊材料中。
13.一种相位调制设备，包括：
液晶层，其具有相对的第一侧和第二侧；
公共电极，其与所述液晶层的所述第一侧相邻；
多个像素电极，其与所述液晶层的所述第二侧相邻，其中对于所述多个像素电极中的每个像素电极，向所述像素电极的电压的应用跨所述液晶层的相应局部区域产生所述像素电极与所述公共电极之间的电压降；
其中所述多个像素电极具有像素间距，所述多个像素电极通过所述像素间距沿着所述液晶层的所述第二侧被分布；
其中所述多个像素电极通过像素间间隙而被彼此分开，其中所述像素间间隙与所述像素间距的比率在0.5和1.0之间；
其中绝缘材料被设置在所述多个像素间间隙中的至少一个像素间间隙内；
所述相位调制设备还包括被设置在所述液晶层与所述多个像素电极之间的模糊材料，所述模糊材料具有比所述液晶层更高的介电常数，并且被配置为平滑所述液晶层中的液晶态的、与所述多个像素电极相关联的所述局部区域之间的相变；以及
所述相位调制设备还包括被设置在所述模糊材料与所述液晶层的所述第二侧之间的多个反射元件。
14.根据权利要求13所述的相位调制设备，其中所述模糊材料包括锆钛酸铅(PZT)。
15.根据权利要求13所述的相位调制设备，其中每个像素电极的高度小于被设置在所述至少一个像素间间隙内的所述绝缘材料的厚度。
16.根据权利要求13所述的相位调制设备，其中至少一个像素电极突出到所述模糊材料中。
17.根据权利要求13所述的相位调制设备，其中所述多个像素电极包括碳纳米管。
18.一种相位调制设备，包括：
液晶层，其具有相对的第一侧和第二侧；
公共电极，其与所述液晶层的所述第一侧相邻；
多个像素电极，其与所述液晶层的所述第二侧相邻，其中对于所述多个像素电极中的每个像素电极，向所述像素电极的电压的应用跨所述液晶层的相应局部区域产生所述像素电极与所述公共电极之间的电压降；
其中所述多个像素电极具有像素间距，所述多个像素电极通过所述像素间距沿着所述液晶层的所述第二侧被分布；
其中所述多个像素电极通过像素间间隙而被彼此分开，其中所述像素间间隙与所述像素间距的比率在0.50和小于1.0之间；
其中电介质镜和四分之一波片中的一个或多个被设置在所述多个像素间间隙中的至少一个像素间间隙内；以及
所述相位调制设备还包括被设置在所述液晶层与所述多个像素电极之间的模糊材料，所述模糊材料具有比所述液晶层更高的介电常数，并且被配置为平滑所述液晶层中的液晶态的、与所述多个像素电极相关联的所述局部区域之间的相变。
19.根据权利要求18所述的相位调制设备，其中所述模糊材料包括锆钛酸铅(PZT)。
20.根据权利要求18所述的相位调制设备，其中所述多个像素电极包括碳纳米管。
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