CN108682664B - A power module based on phase change material and its manufacturing method - Google Patents
A power module based on phase change material and its manufacturing method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Abstract
本发明涉及一种基于相变材料的功率模块及其制作方法，属于功率模块技术领域，包含基板(1)，陶瓷覆铜板(2)，相变模块和功率端子(7)；基板(1)上表面呈长方形，多块陶瓷覆铜板(2)分别设置在基板(1)上，陶瓷覆铜板(2)之间通过铜排连接；相变模块设置在陶瓷覆铜板(2)上，多块功率端子(7)设置在功率端子安装端上；相变模块包含传热增强框架(3)和密封盖(4)，传热增强框架(3)里面填充有相变材料；密封盖(4)的外表面还焊接有功率半导体芯片(5)。本发明提供一种结温短时可控的功率模块，可对功率模块的暂态温升作出响应，并适用于电网故障期间主动提供短路电流支撑电网电压的场合及电磁弹射、超级电容充电等冲击功率场合。
The invention relates to a power module based on a phase-change material and a manufacturing method thereof, belonging to the technical field of power modules, comprising a substrate (1), a ceramic copper-clad laminate (2), a phase-change module and a power terminal (7); a substrate (1) The upper surface is rectangular, a plurality of ceramic copper clad plates (2) are respectively arranged on the base plate (1), and the ceramic copper clad plates (2) are connected by copper bars; the phase change module is arranged on the ceramic copper clad plate (2), and a plurality of The power terminal (7) is arranged on the mounting end of the power terminal; the phase change module comprises a heat transfer enhancement frame (3) and a sealing cover (4), and the heat transfer enhancement frame (3) is filled with a phase change material; the sealing cover (4) A power semiconductor chip (5) is also welded on its outer surface. The invention provides a power module whose junction temperature can be controlled in a short time, which can respond to the transient temperature rise of the power module, and is suitable for the occasions where short-circuit current is actively provided to support the voltage of the power grid during grid failure, as well as electromagnetic ejection, super capacitor charging, etc. Impact power occasions.
Description
Technical Field
The invention belongs to the technical field of power modules, and relates to a phase-change material-based power module and a manufacturing method thereof.
Background
With the rapid development of renewable energy sources, the proportion of the power converter in the power system is larger and larger, and the safety and stability of the power system are more and more affected by the reliability of the power converter. In a power system with high permeability of a distributed power supply, when the power system fails, a power converter actively injects reactive power supporting voltage into a large power grid, the current of the converter is several times or even more than ten times of a rated value, the module loss and the junction temperature are rapidly increased, if the junction temperature cannot be effectively controlled, the module thermal failure is possibly caused, and the system safety is seriously threatened. In addition, when the short-circuit fault occurs in the converter itself, the junction temperature of the chip will also rise rapidly. Therefore, the research on the power module with the controllable chip junction temperature in a short time under the condition of impact load has important significance on the safe and reliable operation of a power system with high distributed power supply permeability, and the realization of the controllable chip junction temperature in a short time depends on the integration of an active thermal management unit in the power module.
As a new temperature control technology, phase-change temperature control utilizes the property that a phase-change material needs to absorb a large amount of heat when being converted from a low-entropy aggregation state to a high-entropy aggregation state at a certain temperature, and the temperature is basically kept unchanged in the conversion process, so that the ambient temperature of a temperature control object is adjusted and controlled. And releasing the absorbed heat into the environment by the phase change material during the shutdown period of the temperature control object so as to prepare for the next working cycle. For impact load, the output power has the characteristics of short time and clearance, so that the phase change temperature control is particularly suitable for the application occasions of the impact load. At present, the phase-change temperature control technology is widely applied to the fields of aviation, aerospace, electronics and the like.
The phase change materials can be divided into four types, namely gas-liquid phase change materials, gas-solid phase change materials, solid-liquid phase change materials and solid-solid phase change materials according to the phase change type. The gas-liquid phase change material and the gas-solid phase change material have the following gas change in the phase change process, which can cause the volume of the phase change material and the pressure in the container to change violently, so that the phase change latent heat of the phase change process of the two materials is very large, but the two materials are rarely applied in practice. The solid-solid phase change material has the smallest volume change, but has little practical application because the latent heat of phase change is the smallest of the four types of phase change materials. The solid-liquid phase change material has moderate phase change latent heat and small volume change, and is the most widely applied phase change material type.
The general principle for the selection of the phase change material needs to be considered from several aspects: the phase-change temperature is matched with the use target, the phase-change latent heat is large, the price is low, the availability is easy, the chemical stability is good, the compatibility with a storage container is good, the thermal stability is good, and the heat transfer and flow properties are good. In addition, the phase-change material also has the properties of no toxicity, no smell, small phase-change volume change, no supercooling or small supercooling degree, no phase segregation phenomenon, difficult combustion and the like. Common solid-liquid phase change materials are classified into organic phase change materials, inorganic phase change materials and composite phase change materials according to chemical composition.
The organic phase-change material mainly comprises organic matters such as paraffin, fatty acids, polyols and the like. The material represented by paraffin and fatty acid has good temperature adaptability, low density, higher unit volume phase change entropy, stable physical and chemical properties, no corrosion to the container, no supercooling and no layering phenomenon caused by precipitation, and less corrosion. However, in practical applications, organic phase change materials also have problems of low thermal conductivity, low density, and the like. The thermal conductivity is low, and is mainly compensated by adding a high thermal conductivity material or adopting a thermal conductivity enhancing structure, so that the preparation difficulty of the composite phase change material is increased. In addition, the organic phase-change material has other disadvantages, such as large volume change, easy volatilization, easy combustion, easy oxidation and the like in the phase-change process, which all limit the application of the organic phase-change material.
The inorganic phase-change material mainly comprises crystalline hydrated salt, molten salt and other inorganic matters. The salt phase-change materials represented by hydrated salts and molten salts have high energy storage density, but the main defects of the phase-change materials are supercooling and phase separation, wherein supercooling means that a substance is not crystallized when condensed to a condensation point, but begins to crystallize when reaching a certain temperature below the condensation point, and phase-change latent heat is released to quickly rise to the condensation point, so that the release and absorption of heat by the phase-change materials are influenced. The phase separation means that when the temperature rises, the crystal water released by the hydrated salt due to melting is insufficient to dissolve all amorphous solid dehydrated salt, the undissolved salt is settled to the bottom of the container due to gravity, and the undissolved salt settled to the bottom cannot be recrystallized due to the incapability of combining with the crystal water in the solidification process, so that phase layering is formed, the energy storage capacity of the phase change material is reduced, and the service life of the phase change energy storage material is shortened.
The other common material in the inorganic phase-change materials is a metal phase-change material, the metal is a ternary alloy and a quaternary alloy which mainly comprise low-melting-point alloy elements such as zinc, bismuth, lead, cadmium, indium, gallium, antimony and the like, the phase-change latent heat of the material is large, the heat conductivity is good, the alloy melting point can be changed by changing the components and the proportion of the metal in the alloy, the heat conductivity is usually tens to hundreds of times of that of other phase-change energy storage materials, and the material has no over-cold phenomenon and phase separation phenomenon. The experimental result shows that the metal phase-change material has higher latent heat of phase change per unit volume, the use volume of the phase-change material can be reduced in application, and meanwhile, the metal phase-change material has better heat-conducting property, and the temperature stratification phenomenon in the phase-change material can be effectively reduced.
The heat transfer process inside the phase-change material is a transient heat transfer process, and the temperature difference exists inside the material at each moment, so that a low-thermal-resistance heat transfer channel needs to be established in the phase-change temperature control device, the heat conduction performance of a phase-change temperature control system is improved, the temperature difference inside the phase-change material is reduced, and the heat transfer capacity is improved. The two common ways of enhancing heat conduction are mainly two, one is to implant a heat conduction enhancer such as metal foam, fins, honeycombs and other structural forms into the phase change material; and the other is to fill heat-conducting fillers such as metal powder, graphite powder and the like in the phase-change material. The metal powder and the graphite powder can not form a continuous heat conducting network, and the heat conductivity of the phase-change material is not greatly improved. The structure such as metal foam, fin, honeycomb can more exert the effect of heat transfer reinforcing, and the size, density, size etc. of metal foam, fin and honeycomb all have huge influence to the heat transfer effect, and the comprehensive consideration is processed the degree of difficulty and cost, can be according to specific application demand, and the design thermal conductivity reinforcing frame of customization, for strengthening the heat conduction reinforcing effect simultaneously, carries out integrated into one piece preparation with thermal conductivity reinforcing frame and phase change material to reduce heat dissipation channel along journey thermal contact resistance.
Aiming at the application occasions of the converter, attention should be paid to avoid that the introduction of composite materials causes excessive increase of thermal resistance from a module to a shell, thermal performance of the module in a normal operation state is influenced, and normal operation temperature is larger.
Disclosure of Invention
In view of the above, the present invention provides a phase change material-based power module and a manufacturing method thereof, and provides a power module with controllable junction temperature in a short time, which integrates a thermal conductivity enhancement frame and a phase change material with high thermal conductivity, can respond to a transient temperature rise of the power module, can inhibit an excessively fast increase of the junction temperature before the phase change material completes a phase change, and effectively prevent thermal failure of the module, so as to be suitable for an occasion of actively providing a short-circuit current, and impact power occasions such as electromagnetic ejection, super capacitor charging, and the like.
In order to achieve the purpose, the invention provides the following technical scheme:
a power module based on phase-change materials comprises a substrate 1, a ceramic copper-clad plate 2, a phase-change module and a power terminal 7;
the upper surface of the substrate 1 is rectangular, the upper layer of the ceramic copper-clad plate 2 is a copper-clad layer, the middle layer is a ceramic insulating layer, the lower layer is a copper layer, the ceramic copper-clad plates 2 are respectively arranged on the substrate 1, and the ceramic copper-clad plates 2 are connected through copper bars;
a gate driving end and a power terminal mounting end are respectively arranged on two edges of the copper-clad layer of the ceramic copper-clad plate 2, and the gate driving end and the power terminal mounting end are completely separated from the copper-clad layer main body of the ceramic copper-clad plate 2;
the phase change module is arranged on a copper clad main body of the ceramic copper clad plate 2, and the power terminals 7 are arranged on a power terminal mounting end;
the phase change module comprises a thermal conductivity enhancement frame 3 and a sealing cover 4, wherein the sealing cover 4 is arranged on the thermal conductivity enhancement frame 3 and used for sealing the phase change module, and a power semiconductor chip 5 is welded on the outer surface of the sealing cover 4;
the phase-change material is filled in the thermal conductivity enhancement frame 3, and according to the designed phase-change temperature, when the temperature of the power semiconductor exceeds the designed phase-change temperature, the phase-change material melts and absorbs heat, so that the effect of restraining the junction temperature from rising too fast is achieved, and meanwhile, the whole power module can be used for actively providing short-circuit current in the phase-change time.
Further, the number of the ceramic copper clad laminates 2 is 2, wherein the power terminal mounting end of one ceramic copper clad laminate 2 is connected to the copper clad layer main body of the other ceramic copper clad laminate 2 through a copper bar.
Further, the number of the power terminals 7 is 3, wherein the two power terminals 7 are respectively arranged at the power terminal mounting ends of the two ceramic copper clad laminates 2, the other power terminal is arranged at the main body part of one ceramic copper clad laminate 2, the 3 power terminals are respectively used as the output end of the power module and the positive and negative input ends, and the power terminals of the positive and negative input ends are not arranged on the same ceramic copper clad laminate 2 and are not contacted with the phase change module.
Further, the power semiconductor chip 5 is an IGBT or a MOSFET;
the drain electrode of the lower half-bridge power semiconductor chip is connected with the source electrode of the upper half-bridge power semiconductor chip and is commonly connected to the output end of the power module, the gate electrodes of the two power semiconductor chips are respectively connected to the gate electrode driving end, the drain electrode of the upper half-bridge power semiconductor chip is connected with the positive electrode input end of the power module, and the source electrode of the lower half-bridge power semiconductor chip is connected with the negative electrode input end of the power module;
and the power semiconductor chip is electrically connected with the gate drive end through a bonding wire 6 between the power semiconductor chip and the power terminal mounting end.
Further, the thermal conductivity enhancement frame 3 is made of brass, the interior of the thermal conductivity enhancement frame 3 is in a pore shape, and the phase change material is filled in each pore.
Further, the phase change material is a low-melting-point metal-based alloy.
Further, the thermal conductivity of the phase change module satisfies:
λ＝(1-ε)λs+ελf
wherein λ represents the thermal conductivity of the phase change module, ε represents the percentage of phase change material in the phase change module, λsDenotes the thermal conductivity, λ, of the material of the thermal conductivity enhancement frame 3fRepresents the thermal conductivity of the phase change material;
when the thermal power of the power module exceeds a normal level, the phase-change material keeps the junction temperature of the power semiconductor chip basically constant for the following time:
t＝Lm/P
t represents the melting time of the phase-change material, L represents the latent heat of the phase-change material, m represents the mass of the phase-change material, and P represents the working power loss when the module works abnormally.
A method for manufacturing a phase-change material-based power module comprises the following steps:
s1: placing enough solid phase-change material at the bottom of a vacuum tank, and placing the cut and formed thermal conductivity enhancement frame and the bracket on the upper part of the solid phase-change material;
s2: packaging the vacuum tank, connecting the vacuum tank to a vacuumizing pipeline, and starting a vacuum pump to vacuumize the vacuum tank;
s3: after the vacuum pumping is finished, closing the vacuum pump, maintaining the vacuum state of the vacuum tank, and placing the vacuum tank in liquid kerosene for heating;
s4: continuously heating the vacuum tank, melting the phase-change material, sinking the thermal conductivity enhancement frame into the phase-change material, and filling the phase-change material into the thermal conductivity enhancement frame;
s5: stopping heating when the thermal conductivity enhancement frame is completely filled with the phase change material;
s6: putting the vacuum tank in a water bath with natural temperature for cooling;
s7: after the phase-change material is completely solidified, opening a vacuum valve on the vacuum tank, slightly heating the vacuum tank, and separating the phase-change material from the wall surface of the thermal conductivity enhancement frame;
s8: taking out the experimental piece filled with the thermal conductivity enhancement frame of the phase change material, removing the redundant phase change material, and covering and sealing the thermal conductivity enhancement frame;
s9: placing a power semiconductor chip on the sealed phase change module in a vacuum environment, placing the phase change module on a ceramic copper-clad plate, and performing reflow soldering;
s10: binding the power module by using a bonding wire, and welding a power terminal;
s11: and connecting the power module with the substrate after the power terminal is welded, filling silica gel into the power module and carrying out shell plastic package.
Further, in step S3, the indication number of the vacuum gauge on the vacuum tank is-0.08 MPa or less when the vacuum pumping is completed.
Further, in step S3, the vacuum tank was heated in kerosene at a temperature of 120 ℃.
The invention has the beneficial effects that:
1. the phase-change material selected by the invention is a metal alloy with low melting point, the melting point and the material composition can be designed in a customized manner, the thermal conductivity is high, and the operating temperature range is wide. When the temperature is lower than the phase change temperature, the prepared phase change module has high strength, and when the temperature is higher than the phase change temperature, the prepared phase change material is converted into a liquid state from a rigid body and is tightly combined with the heat transfer enhancement framework. The introduction of the thermal conductivity enhancement frame further improves the thermal conductivity of the phase change module and shortens the thermal response time.
2. The invention integrates the heat conductivity enhancement frame and the phase-change material with high heat conductivity, can respond to the transient temperature rise of the power module, starts to melt and absorb heat after the temperature reaches the phase-change point to slow down the rising rate of the junction temperature, inhibits the over-rapid increase of the junction temperature before the phase-change material finishes the phase change completely, and effectively prevents the thermal failure of the module. The module can be applied to occasions of actively providing short-circuit current and impact power occasions such as electromagnetic ejection, super capacitor charging and the like.
3. Compared with the traditional cooling scheme of the radiator, the active cooling mode is adopted, and the rapid rise of the junction temperature of a fault device can be effectively inhibited under the conditions that the external cooling mode is not required to be changed and the system volume is increased. When the converter actively provides reactive current for a system to support voltage or overload or short-circuit faults happen passively to cause large instantaneous loss, the phase-change material is melted to absorb heat, and the rising of junction temperature of chips in the module is restrained, so that the normal operation of the power module and the whole system is ensured, and the system has enough time to remove the faults. The composite material of the invention is made of high thermal conductivity material, and can improve the thermal control performance of power electronic equipment under the condition of slightly increasing thermal resistance.
Drawings
In order to make the object, technical scheme and beneficial effect of the invention more clear, the invention provides the following drawings for explanation:
FIG. 1 is an assembly view of a power module of the present invention;
FIG. 2 is a front view of the power module of the present invention;
FIG. 3 is a schematic diagram of a phase change module according to an embodiment of the present invention;
FIG. 4 is a top view of the power module of the present invention;
FIG. 5 is an equivalent circuit diagram of the power module of the present invention;
FIG. 6 is a temperature profile of a phase change material according to the present invention;
fig. 7 is a diagram of a power module manufacturing system according to the present invention.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1 and 2, the invention relates to a phase-change material-based power module, which comprises a substrate 1, a ceramic copper-clad plate 2, a phase-change module and a power terminal 7, wherein the upper surface of the substrate 1 is rectangular, the upper layer of the ceramic copper-clad plate 2 is a copper-clad layer, the middle layer is a ceramic insulating layer, the lower layer is a copper layer, a plurality of ceramic copper-clad plates 2 are respectively arranged on the ceramic insulating layers, and the copper-clad layer of the ceramic copper-clad plate 2 is insulated from the substrate 1 through the ceramic insulating layers.
Two edges of the copper-clad layer of the ceramic copper-clad plate 2 are respectively provided with a gate drive end and a power terminal installation end, the gate drive end and the power terminal installation end are completely separated from the copper-clad layer main body of the ceramic copper-clad plate 2, and the gate drive end and the power terminal installation end are completely insulated from the copper-clad layer main body of the ceramic copper-clad plate 2 through ceramic insulating layers of the ceramic copper-clad plate 2. The phase change module is arranged on a copper-clad layer main body of the ceramic copper-clad plate 2, and the plurality of power terminals 7 are arranged on the power terminal mounting end. Contain two ceramic copper-clad plates 2 in this embodiment, wherein the power terminal installation end of one ceramic copper-clad plate 2 is connected to the main part of another ceramic copper-clad plate 2 through the copper bar, and for the convenience of production and installation, the part of whole power module except that power terminal 7 is rotational symmetry about the center of base plate 1.
The phase change module comprises a thermal conductivity enhancement frame 3 and a sealing cover 4, wherein the sealing cover 4 is arranged on the thermal conductivity enhancement frame 3 and used for sealing the whole power module, and a power semiconductor chip 5 is welded on the outer surface of the sealing cover 4.
The phase-change material is filled in the thermal conductivity enhancement frame 3, and when the temperature of the power exceeds the designed phase-change temperature according to the designed phase-change temperature, the phase-change material melts and absorbs heat, so that the effect of restraining the junction temperature from rising too fast is achieved, and meanwhile, the whole power module can be used for actively providing short-circuit current in the phase-change time.
Aiming at the characteristics of short duration time of impact load and large instantaneous power, the invention adds a layer of phase change module between the power semiconductor chip and the direct copper-clad plate, wherein the phase change module takes a thermal conductivity enhancement frame as a framework, and the phase change module is filled with a phase change material.
The phase-change material is low-melting-point metal-based alloy, gallium and bismuth are selected for the embodiment, the metal has high thermal conductivity, the melting point can be designed specifically for specific occasions, the melting point of the phase-change material is slightly higher than the highest temperature in a normal working state, phase state change can not occur under the global condition of the normal working state, when the current exceeds a rated level due to overload or short circuit of the converter, the temperature rapidly exceeds the melting point, and the material rapidly melts and absorbs a large amount of heat so as to keep the temperature basically unchanged.
The thermal conductivity enhancement frame 3 can be used for customizing a frame structure according to the response requirement of a system and the time for maintaining the junction temperature, and controlling the proportion of the phase change material by changing the size of the pore. As shown in fig. 3, in this embodiment, a high thermal conductivity material such as brass is selected as the material body, and at the same time, the whole frame still maintains good thermal conductivity and electrical conductivity through the mesh connection, and after the phase change material is filled in the pores, the pores are sealed by the metal wall and the customized cover, so as to ensure that the phase change material does not leak to other positions after being melted.
Assuming that the total mass of the phase-change material is m, the latent heat of the material is L, the chip heat source power is P, and the temperature retention time t of the phase-change material is t, then
Lm＝Pt
In this embodiment, the thermal conductivity of the thermal conductivity enhancement frame and the phase change material composite is determined according to the following formula:
λ＝(1-ε)λs+ελf
wherein λ represents the thermal conductivity of the composite material, W/(m · K); ε represents the percentage of phase change material in the composite; lambda [ alpha ]sRepresents the thermal conductivity of the material of the thermal conductivity enhancement frame body, W/(m.K); lambda [ alpha ]fRepresents the thermal conductivity, W/(m.K), of the phase change material.
As shown in fig. 4, the power semiconductor chips 5, including diodes and switching devices (IGBT or MOSFET), are directly welded above the sealing cover 4 of the thermal conductivity enhancement frame 3, and the electrical connections between the power semiconductor chips 5 and the ceramic copper clad laminate and the leading-out of the gate signals of the switching devices are completed through bonding wires 6.
The connection relationship diagram of the present invention is shown in fig. 5, and referring to fig. 4 and 5, the present embodiment is illustrated by using IGBTs, and in the electrical connection, the drain of the body Q2 of one IGBT is connected with the source of the body Q1 of the other IGBT to form the output terminal T of the power module0The gates of the two power semiconductor chips are respectively connected to the gate driving end, wherein the source of the body Q2 of one IGBT and the drain of the body Q1 of the other IGBT form the positive and negative input ends of the power module, such as T in FIG. 51， T2D in FIG. 51，D2The corresponding freewheeling diode is indicated.
As shown in fig. 6, under the condition of a single and stable heat source, the temperature of the phase-change material changes with time, and in the initial stage of heat absorption, the temperature does not reach the melting point of the phase-change material, the phase-change material is solid, sensible heat dominates the process, and heat is mainly used for the temperature rise of the material; after the temperature reaches the melting point, latent heat starts to play a role, the phase change material starts to change phase and absorb a large amount of heat, and the temperature is basically kept constant; after all the materials complete the phase change, the whole material is in a liquid state, the latent heat does not influence the temperature change any more, the sensible heat leads the temperature change of the materials again, and the temperature of the materials starts to rise again.
Fig. 7 shows a system selected for manufacturing a power module according to an embodiment of the present invention, which is divided into two parts, namely, a phase-change material melting part and a phase-change material heating part, wherein the phase-change material melting part includes a vacuum tank 101, two T-type directional valves 106-1 and 106-2 are disposed at two ends of the vacuum tank, the phase-change material heating part includes a constant temperature liquid kerosene reservoir 102, a pressure pump 103, two regulating ball valves 104-1 and 104-2, a regulating ball valve 105, two temperature sensors 108-1 and 108-2, a turbine flowmeter 107, and a data acquisition card 110 for acquiring image acquisition 109 and temperature data and transmitting the data to an upper computer 111.
The manufacturing process of the power module comprises the following steps:
and placing enough solid paraffin at the bottom of the stainless steel vacuum tank, and placing the cut experimental piece and the bracket on the upper part of the solid phase-change material.
Packaging the vacuum tank, connecting with a vacuum-pumping pipeline, starting a vacuum pump, and controlling the vacuum display number to be below-0.08 MPa.
The vacuum valve of the pipeline is screwed down, the vacuum pump is closed, the vacuum is maintained, and the vacuum tank is placed in kerosene of 120 ℃ for heating.
As the phase change material melts, the thermal conductivity enhancement frame and the bracket gradually sink, and the melted phase change material fills the pores of the thermal conductivity enhancement frame in a vacuum environment.
And after the phase change material is completely melted, the thermal conductivity enhancement frame is completely sunk in the phase change material, and the combination of the phase change material and the thermal conductivity enhancement frame is completed, and the heating is stopped.
And (4) placing the vacuum tank in a water bath with natural temperature for cooling until the phase-change material is completely solidified, and opening a vacuum valve. And (3) carrying out micro-thermal separation on the paraffin and the wall surface, taking out the sample of the experimental piece, and removing the redundant phase-change material.
And then, placing the power semiconductor chip on the sealed composite material in a vacuum environment, placing the composite material at a corresponding position of the direct ceramic copper-clad plate, and then carrying out reflow soldering. And then binding the power module by using an aluminum bonding wire, welding a power terminal, finally connecting the welded module and the substrate, filling silica gel in the module and carrying out plastic package on the shell.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (7)
1. A phase change material based power module, characterized by: the phase change material comprises a substrate (1), a ceramic copper-clad plate (2), a phase change module and a power terminal (7);
the upper surface of the substrate (1) is rectangular, the upper layer of the ceramic copper-clad plate (2) is a copper-clad layer, the middle layer is a ceramic insulating layer, the lower layer is a copper layer, the ceramic copper-clad plates (2) are respectively arranged on the substrate (1), and the ceramic copper-clad plates (2) are connected through copper bars;
a gate driving end and a power terminal mounting end are respectively arranged on two edges of a copper-clad layer of the ceramic copper-clad plate (2), and the gate driving end and the power terminal mounting end are completely separated from a copper-clad layer main body of the ceramic copper-clad plate (2);
the phase change module is arranged on a copper clad layer main body of the ceramic copper clad plate (2), and the power terminals (7) are arranged on a power terminal mounting end;
the phase change module comprises a thermal conductivity enhancement frame (3) and a sealing cover (4), wherein the sealing cover (4) is arranged on the thermal conductivity enhancement frame (3) and used for sealing the phase change module, and a power semiconductor chip (5) is welded on the outer surface of the sealing cover (4);
the phase-change material is filled in the thermal conductivity enhancement frame (3), and according to the designed phase-change temperature, when the temperature of the power semiconductor exceeds the designed phase-change temperature, the phase-change material is melted to absorb heat, so that the effect of restraining the junction temperature from rising too fast is achieved, and meanwhile, the whole power module is used for actively providing short-circuit current in the phase-change time;
the thermal conductivity enhancement frame (3) is made of brass, the interior of the thermal conductivity enhancement frame (3) is in a pore shape, and each pore is filled with the phase change material; the phase change material is low-melting-point metal-based alloy; the thermal conductivity of the phase change module satisfies the following conditions:
λ =( 1 –ε)λ s +ε λ f
wherein,λindicating the thermal conductivity of the phase change module,εrepresenting the percentage of phase change material in the phase change module,λ s represents the thermal conductivity of the material of the thermal conductivity enhancement frame (3),λ f represents the thermal conductivity of the phase change material;
when the thermal power of the power module exceeds a normal level, the phase-change material keeps the junction temperature of the power semiconductor chip basically constant for the following time:
t=Lm/P
twhich represents the melting time of the phase change material,Lindicating potential of phase change materialThe heat of the molten metal is removed,mwhich represents the mass of the phase change material,Pindicating the operating power loss when the module is operating abnormally.
2. The phase change material based power module of claim 1, wherein: the number of the ceramic copper clad plates (2) is 2, wherein the power terminal mounting end of one ceramic copper clad plate (2) is connected to the copper clad layer main body of the other ceramic copper clad plate (2) through a copper bar.
3. The phase change material based power module of claim 2, wherein: the number of the power terminals (7) is 3, wherein the two power terminals (7) are respectively arranged at the power terminal mounting ends of the two ceramic copper clad laminates (2), the other power terminal is arranged at the main body part of one ceramic copper clad laminate (2), the 3 power terminals are respectively used as the output end of the power module and the positive and negative input ends, and the power terminals of the positive and negative input ends are not arranged on the same ceramic copper clad laminate (2) and are not contacted with the phase change module.
4. A phase change material based power module according to claim 3, characterized in that: the power semiconductor chip (5) is an IGBT or an MOSFET;
the drain electrode of the lower half-bridge power semiconductor chip is connected with the source electrode of the upper half-bridge power semiconductor chip and is commonly connected to the output end of the power module, the gate electrodes of the two power semiconductor chips are respectively connected to the gate electrode driving end, the drain electrode of the upper half-bridge power semiconductor chip is connected with the positive electrode input end of the power module, and the source electrode of the lower half-bridge power semiconductor chip is connected with the negative electrode input end of the power module;
and the power semiconductor chip is electrically connected with the gate drive end through a bonding wire (6) between the power semiconductor chip and the power terminal mounting end.
5. Method for manufacturing a phase change material based power module according to any of claims 1-4, characterized in that: the method comprises the following steps:
s1: placing enough solid phase-change material at the bottom of a vacuum tank, and placing the cut and formed thermal conductivity enhancement frame and the bracket on the upper part of the solid phase-change material;
s2: packaging the vacuum tank, connecting the vacuum tank to a vacuumizing pipeline, and starting a vacuum pump to vacuumize the vacuum tank;
s3: after the vacuum pumping is finished, closing the vacuum pump, maintaining the vacuum state of the vacuum tank, and placing the vacuum tank in liquid kerosene for heating;
s4: continuously heating the vacuum tank, melting the phase-change material, sinking the thermal conductivity enhancement frame into the phase-change material, and filling the phase-change material into the thermal conductivity enhancement frame;
s5: stopping heating when the thermal conductivity enhancement frame is completely filled with the phase change material;
s6: putting the vacuum tank in a water bath with natural temperature for cooling;
s7: after the phase-change material is completely solidified, opening a vacuum valve on the vacuum tank, slightly heating the vacuum tank, and separating the phase-change material from the wall surface of the thermal conductivity enhancement frame;
s8: taking out the experimental piece filled with the thermal conductivity enhancement frame of the phase change material, removing the redundant phase change material, and covering and sealing the thermal conductivity enhancement frame;
s9: placing a power semiconductor chip on the sealed phase change module in a vacuum environment, placing the phase change module on a ceramic copper-clad plate, and performing reflow soldering;
s10: binding the power module by using a bonding wire, and welding a power terminal;
s11: and connecting the power module with the substrate after the power terminal is welded, filling silica gel into the power module and carrying out shell plastic package.
6. The method of claim 5, wherein: in step S3, when the vacuum pumping is completed, the indication number of the vacuum gauge on the vacuum tank is below-0.08 MPa.
7. The method of claim 6, wherein: in step S3, the vacuum tank was heated in kerosene at a temperature of 120 ℃.
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| FR3112241A1 (en) * | 2020-07-02 | 2022-01-07 | Safran | Cooling device implemented in a power electronics application |
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| CN110379787A (en) * | 2019-07-22 | 2019-10-25 | 重庆大学 | Power semiconductor modular structure |
| CN113270374A (en) * | 2021-04-30 | 2021-08-17 | 深圳芯能半导体技术有限公司 | IGBT power device |
| CN113270373A (en) * | 2021-04-30 | 2021-08-17 | 深圳芯能半导体技术有限公司 | IGBT power device and shell thereof |
| CN113207271B (en) * | 2021-06-15 | 2022-07-12 | 中国石油大学(华东) | Phase-change energy-storage type radiator |
| CN115841996B (en) * | 2022-09-30 | 2023-09-15 | 浙江大学杭州国际科创中心 | Thermal buffer power module based on metal framework phase change material and manufacturing method thereof |
| WO2025002570A1 (en) * | 2023-06-30 | 2025-01-02 | Hitachi Energy Ltd | Power module and method for producing a power module |
| CN116721989A (en) * | 2023-08-10 | 2023-09-08 | 烟台台芯电子科技有限公司 | IGBT module and packaging technology |
| CN116798882B (en) * | 2023-08-22 | 2024-01-30 | 哈尔滨工业大学（威海） | Manufacturing method of power module with double-sided heat dissipation structure |
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| CN103794578A (en) * | 2014-01-24 | 2014-05-14 | 嘉兴斯达微电子有限公司 | High-frequency large-power silicon carbide MOSFET module |
| CN203746841U (en) * | 2014-01-24 | 2014-07-30 | 嘉兴斯达微电子有限公司 | Power semiconductor module |
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